CN104409463A - Optical detector for modulating channel current based on HEMT (High Electron Mobility Transistor) structure - Google Patents
Optical detector for modulating channel current based on HEMT (High Electron Mobility Transistor) structure Download PDFInfo
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- CN104409463A CN104409463A CN201410643683.2A CN201410643683A CN104409463A CN 104409463 A CN104409463 A CN 104409463A CN 201410643683 A CN201410643683 A CN 201410643683A CN 104409463 A CN104409463 A CN 104409463A
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Abstract
The invention is applicable to the field of semiconductor photoelectrons and relates to an optical detector for modulating channel current based on a HEMT structure. The detector comprises a semiconductor layer with the HEMT device structure at the lowermost part, an optical induction layer deposited at the HEMT gate electrode and a metal electrode layer deposited on the optical induction layer; a source electrode and a drain electrode are arranged at two sides of the gate electrode; optical radiation passes through the semiconductor layer with the HEMT device structure and is incident to the optical induction layer of the gate electrode; the optical induction layer generates pyroelectric effects or photovoltaic effects resulting in the change of charge distribution on the surface of the optical induction layer, so that the charge distribution on the surface of the semiconductor layer contacting with the optical induction layer is induced to be changed; the polarization field strength inside the semiconductor layer is changed, resulting in the change of output current; and finally, input optical radiation signals are converted into variable current signals to output and the detection of optical radiation is finished. The optical detector has higher detection rate, works at room temperature and is convenient to use.
Description
Technical field
The present invention is used for field of semiconductor photoelectron technique, is specifically related to a kind of photo-detector based on HEMT-structure modulation channel current.
Background technology
In order to adapt to the needs of following complex environment, optical detector technology is just towards the future development of wide range, highly sensitive, high-resolution, room temperature, integration of compact.It is high that HEMT has electron mobility, electric current is large, puncture voltage high, is widely used in high frequency and powerful occasion, particularly GaN HEMT, GaN base semiconductor has the features such as broad stopband, direct band gap, high electron saturation velocities, high-breakdown-voltage, little dielectric constant, strong polarized electric field, these features make GaN material can prepare highly sensitive signal converter part, and are applicable to high power, the adverse circumstances of high radiation, stability is high, and the scope of application is wide.There is the photoinduction material of good piezoelectric effect/photovoltaic effect/pyroelectric effect as ferroelectric material etc., becoming and prepared one of room temperature infrared detector effective way, having made the photo-detector performance based on having good pyroelectric effect photoinduction material obtain large increase.HEMT combines with the photoinduction material with good pyroelectric effect can make high sensitivity photo-detector, but also there are some problems.Problem one: in order to improve the sensitivity of device, usually utilize piezoelectric effect element and opto-mechanical deflecting element (resonator/cantilever beam/barrier film etc.) to absorb light radiation and produce piezoelectric signal or optical path-deflecting to detect light signal, room temperature can be worked in, but complicated process of preparation, easily be subject to the interference of the extraneous field of force/sound wave, make its range of application limited.Problem two: in order to meet polarized electric field and multiband wide range detection requirement, make GaN photon detector structural design more complicated, non-polarized epitaxial growth and the epitaxially grown demand of low-dimensional, also propose requirements at the higher level to epitaxial growth.Problem three: in order to improve ferroelectric material detection performance, need adopt the heat insulation technique of barrier film/microbridge, heat insulation technological requirement is high, and preparation process can have certain destruction to ferroelectric thin film, increases difficulty prepared by high performance device.Comprehensive above main photo-detector context analyzer, the photo-detector of different technologies route has respective advantage, also there is deficiency, therefore finds the emphasis that new detecting structure and mechanism are still current research.
Summary of the invention
The HEMT-structure with high sensitivity sensing function is the object of the invention is to combine with the photoinduction layer with large pyroelectricity and photovoltaic coefficient, the photo-detector controlling channel current to reach to detect object by modulation two-dimensional electron gas (2DEG) made.
The present invention is used for field of semiconductor photoelectron technique, is specifically related to a kind of photo-detector based on HEMT-structure modulation channel current.This detector comprises: the semiconductor layer with HEMT device structure being in bottom; One deck photoinduction layer is deposited at HEMT gate electrode position place; Be deposited on the layer of metal electrode layer on photoinduction layer; In gate electrode both sides, there is source electrode and drain electrode.
The described semiconductor layer with HEMT device structure is GaN/AlGaN layer or GaAs/AlGaAs layer.
Described photoinduction layer is absorb the material that light radiation produces pyroelectric effect or photovoltaic effect, as lead zirconate titanate (PZT) film in ferroelectric thin film, and the films such as polyvinylidene fluoride (PVDF) film.
The course of work of this detector is: light radiation is incided on grid photoinduction layer through the semiconductor layer with HEMT device structure, photoinduction layer produces pyroelectric effect or photovoltaic effect, cause photoinduction layer surface charge changes in distribution, thus induce the CHARGE DISTRIBUTION of the semiconductor layer surface contacted with photoinduction layer to change, and then cause the change of semiconductor layer internal polarization field intensity, cause the change of two-dimensional electron gas (2DEG), output current is changed, the current signal finally making the optical radiation signal of input convert change to exports, complete the detection of light radiation.
The advantage of this detector is:
1, because the 2DEG of HEMT own is responsive to electric field change, add that light detector layer that pyroelectric coefficient is large can generation considerable influence to 2DEG, detector has higher detectivity.
2, contrary with GaN photon detector, polarized electric field is favourable to the application's feature detector, solves the non-polarized epitaxial growth of GaN detector and the epitaxially grown difficult problem of low-dimensional.This is research ultraviolet, visible, Infrared Detectors provides technical strategies.
3, this detector is non-photogenerated current dependent form device, and HEMT is highly sensitive, by pyroelectric effect and anti-photovoltaic effect compound photoproduction electric field action, reduces ferroelectric thin film form and insulation requirement, and reduces the dependence to photosensitive area.
4, this detector is single-chip upside-down mounting planarized structure, easy of integration; Without fine motion element, the external interference such as vibrated and sound is little; Incident optical window is wide bandgap material, can carry out wide range detection, is conducive to the development of UV-visible-infrared detection direction, expansion and transplantability stronger.
The present invention has higher detectivity, can improve the detectivity of 20-30%, work in room temperature, easy to use.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the photo-detector based on HEMT-structure modulation channel current of non-flip chip bonding encapsulation
1-HEMT resilient coating
2-AlN layer
3-HEMT barrier layer
4-source class
5-drains
6-photoinduction layer
7-gate metal layer
Embodiment
Concrete, described HEMT device is HEMT device prepared by GaN/AlGaN or GaAs/AlGaAs semi-conducting material; Described photoinduction layer is lead zirconate titanate (PZT) film, and polyvinylidene fluoride (PVDF) film etc. absorb the material that light radiation produces pyroelectric effect; Described metal electrode layer is aluminium, gold, silver, platinum, the sandwich constructions such as nickel single layer structure or nickel gold.
Embodiment 1:
Using GaN/AlGaN HEMT as HEMT device, using pzt thin film as photoinduction layer, for nickel gold as grid electrode layer, this device is made up of following part: GaN/AlGaN HEMT device, be grown on the pzt thin film on gate location, the nickel gold electrode of growth on pzt thin film, is grown on source electrode and the drain electrode of gate electrode both sides.
1. first utilize the Si sheet or sapphire sheet that diffusional deposition technique has GaN/AlGaN structure to form heterojunction, preparation GaN/AlGaN heterojunction HEMT.
2. utilize RF magnetic control sputtering system to grow source electrode and drain electrode.
3. utilize RF magnetic control sputtering system in gate location, deposit one deck pzt thin film.
4. utilize RF magnetic control sputtering system to deposit one deck nickel gold gate metal electrode layer.
5. laser lift-off substrate and do flip chip bonding encapsulation.
This structure can realize the detection of infrared band radiation.
Embodiment 2:
Using GaAs/AlGaAs HEMT as HEMT device, using PVDF thin film as photoinduction layer, for nickel gold as grid electrode layer, this device is made up of following part: GaAs/AlGaAs HEMT device, be grown on the PVDF thin film on grid, the nickel gold electrode of growth in PVDF thin film, is grown on source electrode and the drain electrode of gate electrode both sides.
1. first utilize the Si sheet or sapphire sheet that diffusional deposition technique has GaAs/AlGaAs structure to form heterojunction, preparation GaAs/AlGaAs heterojunction HEMT.
2. utilize RF magnetic control sputtering system to grow source electrode and drain electrode.
3. utilize RF magnetic control sputtering system in gate location, deposit one deck PVDF thin film.
4. utilize RF magnetic control sputtering system to deposit one deck nickel gold gate metal electrode.
5. laser lift-off substrate and do flip chip bonding encapsulation.
This structure can realize the detection of infrared band radiation.
Embodiment 3:
Using GaN/AlGaN HEMT as HEMT device, using barium strontium titanate (BST) film as ferroelectric thin film layer, for nickel gold as grid electrode layer, this device is made up of following part: GaN/AlGaN HEMT device, be grown on the bst thin film on grid, the nickel gold electrode of growth on bst thin film, is grown on source electrode and the drain electrode of gate electrode both sides.
1. first utilize the Si sheet or sapphire sheet that diffusional deposition technique has GaN/AlGaN structure to form heterojunction, preparation GaN/AlGaN heterojunction HEMT.
2. utilize RF magnetic control sputtering system to grow source electrode and drain electrode.
3. utilize RF magnetic control sputtering system in gate location, deposit one deck bst thin film.
4. utilize RF magnetic control sputtering system to deposit one deck nickel gold gate metal electrode.
5. laser lift-off substrate and do flip chip bonding encapsulation.
This structure can realize the detection of infrared band radiation.
Embodiments of the invention are only used to explain and the present invention is described, instead of limit the invention, and in the protection range of spirit of the present invention and claim, any amendment make the present invention and change, all fall into protection scope of the present invention; The present invention does not illustrate the parameter size of device, meets the parameter size that the principle of the invention can reach Effect on Detecting all fall into scope for all.
Claims (4)
1., based on a photo-detector for HEMT-structure modulation channel current, it is characterized in that: this detector mainly comprises: the semiconductor layer with HEMT device structure being in bottom; One deck photoinduction layer is deposited at HEMT gate electrode position place; Be deposited on the layer of metal electrode layer on photoinduction layer; In gate electrode both sides, there is source electrode and drain electrode; Described photoinduction layer is absorb the material that light radiation produces pyroelectric effect or photovoltaic effect;
Light radiation is incided on grid photoinduction layer through the semiconductor layer with HEMT device structure, photoinduction layer produces pyroelectric effect or photovoltaic effect, cause photoinduction layer surface charge changes in distribution, thus induce the CHARGE DISTRIBUTION of the semiconductor layer surface contacted with photoinduction layer to change, and then cause the change of semiconductor layer internal polarization field intensity, cause the change of two-dimensional electron gas 2DEG, output current is changed, the current signal finally making the optical radiation signal of input convert change to exports, and completes the detection of light radiation.
2. as claimed in claim 1 a kind of based on HEMT channel current modulation photo-detector, it is characterized in that: the described semiconductor layer with HEMT device structure is GaN/AlGaN layer or GaAs/AlGaAs layer.
3. as claimed in claim 1 a kind of based on HEMT channel current modulation photo-detector, it is characterized in that: described photoinduction layer is ferroelectric thin film.
4. a kind of photo-detector based on the modulation of HEMT channel current as claimed in claim 1, is characterized in that: ferroelectric thin film adopts PZT thin film or polyvinylidene difluoride membrane.
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| CN201410643683.2A CN104409463A (en) | 2014-11-09 | 2014-11-09 | Optical detector for modulating channel current based on HEMT (High Electron Mobility Transistor) structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900726A (en) * | 2015-05-05 | 2015-09-09 | 重庆科技学院 | Solar cell structure |
| CN104900745A (en) * | 2015-05-26 | 2015-09-09 | 北京工业大学 | Spectrum detector based on high electron mobility transistor and preparation method thereof |
| CN107749410A (en) * | 2017-09-22 | 2018-03-02 | 京东方科技集团股份有限公司 | Ambient light sensor, display panel and display device |
| CN109786498A (en) * | 2018-12-10 | 2019-05-21 | 华南理工大学 | A kind of infrared detector cell and preparation method thereof based on two-dimensional semiconductor material |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101148776A (en) * | 2006-09-18 | 2008-03-26 | 中国科学院半导体研究所 | Epitaxy growth method for gallium antimonide on gallium arsenide substrate |
| US20080272397A1 (en) * | 2007-05-04 | 2008-11-06 | Alexei Koudymov | Semiconductor device with modulated field element |
| CN102299176A (en) * | 2011-08-30 | 2011-12-28 | 电子科技大学 | Ferroelectric film grid reinforced GaN heterojunction field effect transistor |
| CN102306626A (en) * | 2011-09-09 | 2012-01-04 | 电子科技大学 | Semiconductor heterojunction field effect transistor grid structure preparation method |
-
2014
- 2014-11-09 CN CN201410643683.2A patent/CN104409463A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101148776A (en) * | 2006-09-18 | 2008-03-26 | 中国科学院半导体研究所 | Epitaxy growth method for gallium antimonide on gallium arsenide substrate |
| US20080272397A1 (en) * | 2007-05-04 | 2008-11-06 | Alexei Koudymov | Semiconductor device with modulated field element |
| CN102299176A (en) * | 2011-08-30 | 2011-12-28 | 电子科技大学 | Ferroelectric film grid reinforced GaN heterojunction field effect transistor |
| CN102306626A (en) * | 2011-09-09 | 2012-01-04 | 电子科技大学 | Semiconductor heterojunction field effect transistor grid structure preparation method |
Non-Patent Citations (1)
| Title |
|---|
| 普朝光: "《非制冷红外探测材料技术》", 30 September 2011, 北京：国防工业出版社 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900726A (en) * | 2015-05-05 | 2015-09-09 | 重庆科技学院 | Solar cell structure |
| CN104900745A (en) * | 2015-05-26 | 2015-09-09 | 北京工业大学 | Spectrum detector based on high electron mobility transistor and preparation method thereof |
| CN107749410A (en) * | 2017-09-22 | 2018-03-02 | 京东方科技集团股份有限公司 | Ambient light sensor, display panel and display device |
| CN107749410B (en) * | 2017-09-22 | 2019-08-09 | 京东方科技集团股份有限公司 | Ambient light sensor, display panel and display device |
| CN109786498A (en) * | 2018-12-10 | 2019-05-21 | 华南理工大学 | A kind of infrared detector cell and preparation method thereof based on two-dimensional semiconductor material |
| CN109786498B (en) * | 2018-12-10 | 2021-04-06 | 华南理工大学 | Infrared detection element based on two-dimensional semiconductor material and preparation method thereof |
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Application publication date: 20150311 |