CN104409341A - Method of preparing ohm contact electrode on silicon carbide substrate - Google Patents
Method of preparing ohm contact electrode on silicon carbide substrate Download PDFInfo
- Publication number
- CN104409341A CN104409341A CN201410669080.XA CN201410669080A CN104409341A CN 104409341 A CN104409341 A CN 104409341A CN 201410669080 A CN201410669080 A CN 201410669080A CN 104409341 A CN104409341 A CN 104409341A
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- contact electrode
- ohm contact
- carbide substrates
- film layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 76
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 239000000758 substrate Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000002184 metal Substances 0.000 claims description 32
- 239000010408 film Substances 0.000 claims description 30
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 150000001875 compounds Chemical group 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000006101 laboratory sample Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to the technical field of electronics and particularly relates to a method of manufacturing an ohm contact electrode. The method of preparing the ohm contact electrode on a silicon carbide substrate comprises the following steps: a first step of preparing a silicon carbide substrate with set doping concentration; a second step of phto-etching an ohm contact pattern on the silicon carbide substrate; a third step of depositing a film layer to form a compound structure; and a fourth step of removing a film layer in the area outside the ohm contact pattern to obtain the ohm contact electrode. The method can be used for preparing high-quality low-resistance ohm contact electrode, so that the silicon carbide material can be possibly used for providing various power apparatuses and various novel sensor chips on a large scale.
Description
Technical field
The present invention relates to electronic technology field, be specifically related to a kind of Ohm contact electrode manufacture method.
Background technology
Carborundum has excellent physicochemical characteristics and the electrology characteristics such as large, the high saturated electron drift velocity of energy gap, high breakdown field strength, high heat conductance and capability of resistance to radiation be strong, at application scenario is one of the desirable semi-conducting material such as high temperature, high-frequency, high-power, radioresistance, nonvolatile memory part and short-wavelength light electronic device and photoelectricity is integrated, be particularly suitable for applying under extreme condition and adverse circumstances.
Although carbofrax material has very excellent character, but due to high-quality ohmic contact cannot be obtained between metal electrode and manufacturing silicon carbide semiconductor material under existing process conditions, constrain its large-scale application.
Summary of the invention
The object of the invention is to, a kind of method Ohm contact electrode preparing by silicon carbide substrates is provided, solve above technical problem.
Technical problem solved by the invention can realize by the following technical solutions:
The method of Ohm contact electrode prepared by silicon carbide substrates, wherein, comprises the following steps:
Step 1, prepares the silicon carbide substrates of a setting doping content;
Step 2, photoetching Ohmic contact pattern in described silicon carbide substrates;
Step 3, deposit thin film layers, to form composite construction;
Step 4, removes described Ohmic contact pattern with the thin layer of exterior domain to obtain Ohm contact electrode.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, the concrete steps of described step 3 are as follows:
Step 31a, deposits the first metal film layer in an inert gas atmosphere in described silicon carbide substrates;
Step 32a, evaporation second metal film layer on described first metal film layer.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, the concrete steps of described step 3 are as follows:
Step 31b, deposits the first metal film layer in an inert gas atmosphere in described silicon carbide substrates;
Step 32b, deposits Si layer on described first metal film layer;
Step 33b, evaporation second metal film layer on described Si layer.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, also comprise step 5, heat-treat under a design temperature condition.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, described design temperature is 400 DEG C, 500 DEG C, 600 DEG C or 700 DEG C.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, the doping content of described silicon carbide substrates is 3.2 × 10
-18cm
-3.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, described silicon carbide substrates adopts n-type 4H-SiC substrate.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, described first metal film layer is Ti layer.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, described second metal film layer is Au layer.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, prepare multiple described Ohm contact electrode in described silicon carbide substrates, the spacing between described Ohm contact electrode is 50 μm, 100 μm, 150 μm, 200 μm or 250 μm.
Beneficial effect: owing to adopting above technical scheme, the present invention can prepare high-quality low-resistance Ohm contact, makes carbofrax material become possibility for the production of various power device and various novel sensor chip on a large scale.
Accompanying drawing explanation
Fig. 1 is method flow schematic diagram of the present invention;
Fig. 2 is the schematic flow sheet of a kind of embodiment of step 3 of the present invention;
Fig. 3 is the schematic flow sheet of the another kind of embodiment of step 3 of the present invention;
Fig. 4 is the I-V curve in the unannealed situation of Au/Ti/SiC system;
Fig. 5 is the ratio contact position resistivity calculated curve corresponding to Fig. 4;
Fig. 6 is the I-V curve of Au/Ti/SiC system 600 DEG C of annealing in process;
Fig. 7 is the ratio contact position resistivity calculated curve corresponding to Fig. 6;
Fig. 8 is the I-V curved line relation of Au/Si/Ti/SiC system when different heat treatment temperature conditions.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite of not making creative work, all belongs to the scope of protection of the invention.
It should be noted that, when not conflicting, the embodiment in the present invention and the feature in embodiment can combine mutually.
Below in conjunction with the drawings and specific embodiments, the invention will be further described, but not as limiting to the invention.
Due under some extreme conditions and adverse circumstances, the performance of silicon carbide device is considerably beyond silicon (Si) device and GaAs (GaAs), in order to capture the technological difficulties of carbofrax material substrate and Metal Contact, carrying out large quantifier elimination, and having made great progress.But applicant finds in research process, although achievement in research can form ohmic contact in the past, all need to carry out high-temperature heat treatment, the low power consuming low stain that this and current countries in the world are advocated requires not to be inconsistent, easily cause the wasting of resources, environmental pollution and cost rise violently.
With reference to Fig. 1, the invention provides a kind of method Ohm contact electrode preparing by silicon carbide substrates, wherein, comprise the following steps:
Step 1, prepares the silicon carbide substrates of a setting doping content;
Step 2, photoetching Ohmic contact pattern in silicon carbide substrates;
Step 3, deposit thin film layers, to form composite construction;
Step 4, removes Ohmic contact pattern with the thin layer of exterior domain to obtain Ohm contact electrode.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, a kind of specific embodiment,
With reference to Fig. 2, the concrete steps of step 3 can be as follows:
Step 31a, deposits the first metal film layer on silicon carbide substrates in an inert gas atmosphere;
Step 32a, evaporation second metal film layer on the first metal film layer.
Magnetically controlled sputter method can be utilized in high vacuum argon gas atmosphere, to deposit the first metal film layer on silicon carbide substrates, photoresist covers whole first metal film layer, adopt the photoresist on stripping technology stripping Ohmic contact pattern overlying regions first metal film layer, evaporation second metal film layer, peels off to the thin layer of appointed area the Ohm contact electrode finally obtaining Au/Ti/SiC system again.It should be noted that: appointed area changes according to the change of semiconductor technology and the sedimentary sequence of thin layer, does not limit at this.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, another kind of specific embodiment, with reference to Fig. 3, the concrete steps of step 3 are as follows:
Step 31b, deposits the first metal film layer on silicon carbide substrates in an inert gas atmosphere;
Step 32b, deposits Si layer on the first metal film layer;
Step 33b, evaporation second metal film layer on Si layer.
Magnetically controlled sputter method can be utilized equally in high vacuum argon gas atmosphere, to deposit the first metal film layer on silicon carbide substrates, deposit Si layer again, then evaporation second metal film layer, needs according to technique the Ohm contact electrode peeling off finally to obtain Au/Si/Ti/SiC system to the thin layer of appointed area in the process of step 3.It should be noted that: appointed area changes according to the change of semiconductor technology and the sedimentary sequence of thin layer, does not limit at this.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, the doping content of silicon carbide substrates is 3.2 × 10
-18cm
-3.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, silicon carbide substrates adopts n-type 4H-SiC substrate.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, the first metal film layer can be Ti layer.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, the second metal film layer can be Au layer.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, prepare multiple Ohm contact electrode in silicon carbide substrates, the spacing range between Ohm contact electrode is 50 μm to 250 μm.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, the spacing between Ohm contact electrode can be arranged in arithmetic progression, is 50 μm, 100 μm, 150 μm, 200 μm or 250 μm.
The method of Ohm contact electrode prepared by silicon carbide substrates of the present invention, can also step 5 be comprised, heat-treat under a design temperature condition.Design temperature can be 400 DEG C or 500 DEG C or 600 DEG C or 700 DEG C.
The present invention is analyzed by the performance of test macro to the Ohm contact electrode of preparation, for
The Ohm contact electrode of Au/Ti/SiC system, with reference to shown in Fig. 4, just can obtain ohmic contact in unannealed situation, and with reference to Fig. 5, can calculate its ohmic contact resistance is 1.26 × 10
-6Ω cm
2.For verifying the impact of rapid thermal treatment on electric property further, carried out heat treatment test at different temperature again, with reference to Fig. 6 and Fig. 7, under argon gas atmosphere 600 DEG C of heat-treat conditions, obtaining minimum ohmic contact resistance is 6.4 × 10
-7Ω cm
2.When higher than 700 DEG C, ohm electrical properties is deteriorated; Just an ohm character is lost completely after 800 DEG C of short annealing process.
For the Ohm contact electrode of Au/Si/Ti/SiC system, with reference to Fig. 8, under the condition of not heat-treating, showing ohmic contact character equally, is 1.18 × 10 through calculating ohmic contact resistance
-5Ω ㎝
2.Along with the rising of annealing temperature, ohmic contact resistance reduces gradually, 500 DEG C time, obtains minimal-contact resistance, is 5.6 × 10
-6Ω cm
2.After annealing in process temperature is higher than 500 DEG C, ohm contact performance is deteriorated, and just loses the character of ohmic contact gradually higher than laboratory sample after 700 DEG C of process.
In order to probe into the impact of surface topography on ohm contact performance, scanning electron microscopy SEM is used to be studied sample surfaces.When not heat-treating or after heat-treating, the surface topography of Au/Ti/SiC system is all than the smooth surface of Au/Si/Ti/SiC system.Smooth sample surfaces, has very large facilitation to the performance improving ohmic contact.Along with the continuous progress of growing silicon carbice crystals technology, the large-sized carborundum crystals material of high-quality is progressively applied in the power electronic device such as transducer, high-frequency high-power switch of a new generation, and various power device, microelectronic chip will be produced, especially at various novel sensor chip field by extensive use.The present invention can prepare high-quality low-resistance Ohm contact, makes carbofrax material become possibility for the production of various power device and various novel sensor chip on a large scale.
The foregoing is only preferred embodiment of the present invention; not thereby embodiments of the present invention and protection range is limited; to those skilled in the art; should recognize and all should be included in the scheme that equivalent replacement done by all utilizations specification of the present invention and diagramatic content and apparent change obtain in protection scope of the present invention.
Claims (10)
1. prepared by silicon carbide substrates the method for Ohm contact electrode, it is characterized in that, comprise the following steps:
Step 1, prepares the silicon carbide substrates of a setting doping content;
Step 2, photoetching Ohmic contact pattern in described silicon carbide substrates;
Step 3, deposit thin film layers, to form composite construction;
Step 4, removes described Ohmic contact pattern with the thin layer of exterior domain to obtain Ohm contact electrode.
2. prepared by silicon carbide substrates according to claim 1 the method for Ohm contact electrode, it is characterized in that, the concrete steps of described step 3 are as follows:
Step 31a, deposits the first metal film layer in an inert gas atmosphere in described silicon carbide substrates;
Step 32a, evaporation second metal film layer on described first metal film layer.
3. prepared by silicon carbide substrates according to claim 1 the method for Ohm contact electrode, it is characterized in that, the concrete steps of described step 3 are as follows:
Step 31b, deposits the first metal film layer in an inert gas atmosphere in described silicon carbide substrates;
Step 32b, deposits Si layer on described first metal film layer;
Step 33b, evaporation second metal film layer on described Si layer.
4. prepared by silicon carbide substrates according to claim 1 the method for Ohm contact electrode, it is characterized in that, also comprise step 5, heat-treat under a design temperature condition.
5. prepared by silicon carbide substrates according to claim 4 the method for Ohm contact electrode, it is characterized in that, described design temperature is 400 DEG C, 500 DEG C, 600 DEG C or 700 DEG C.
6. prepared by silicon carbide substrates according to claim 1 the method for Ohm contact electrode, it is characterized in that, the doping content of described silicon carbide substrates is 3.2 × 10
-18cm
-3.
7. prepared by silicon carbide substrates according to claim 1 the method for Ohm contact electrode, it is characterized in that, described silicon carbide substrates adopts n-type 4H-SiC substrate.
8. the method for Ohm contact electrode prepared by the silicon carbide substrates according to Claims 2 or 3, it is characterized in that, described first metal film layer is Ti layer.
9. the method for Ohm contact electrode prepared by the silicon carbide substrates according to Claims 2 or 3, it is characterized in that, described second metal film layer is Au layer.
10. prepared by silicon carbide substrates according to claim 1 the method for Ohm contact electrode, it is characterized in that, in described silicon carbide substrates, prepare multiple described Ohm contact electrode, the spacing between described Ohm contact electrode is 50 μm, 100 μm, 150 μm, 200 μm or 250 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410669080.XA CN104409341B (en) | 2014-11-20 | 2014-11-20 | The method that Ohm contact electrode is prepared in silicon carbide substrates |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410669080.XA CN104409341B (en) | 2014-11-20 | 2014-11-20 | The method that Ohm contact electrode is prepared in silicon carbide substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104409341A true CN104409341A (en) | 2015-03-11 |
| CN104409341B CN104409341B (en) | 2017-11-14 |
Family
ID=52646958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410669080.XA Active CN104409341B (en) | 2014-11-20 | 2014-11-20 | The method that Ohm contact electrode is prepared in silicon carbide substrates |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104409341B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107123593A (en) * | 2017-04-11 | 2017-09-01 | 山东大学 | One kind mixes germanium carborundum Ohmic contact forming method |
| CN107369617A (en) * | 2017-07-06 | 2017-11-21 | 西安交通大学 | A kind of SiC high temperature ohmic contacts electrode and preparation method thereof |
| CN108899756A (en) * | 2018-06-06 | 2018-11-27 | 青岛海信宽带多媒体技术有限公司 | The deposition method of metal electrode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201032635Y (en) * | 2006-12-23 | 2008-03-05 | 厦门三优光机电科技开发有限公司 | PIN structure 4H-SiC ultraviolet photoelectric detector |
| CN102859661A (en) * | 2010-04-14 | 2013-01-02 | 住友电气工业株式会社 | Silicon carbide semiconductor device and method for manufacturing same |
| CN103094073A (en) * | 2013-01-17 | 2013-05-08 | 上海师范大学 | Preparation method of semi-insulating silicon carbide substrate titanium ohmic contact electrode |
-
2014
- 2014-11-20 CN CN201410669080.XA patent/CN104409341B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201032635Y (en) * | 2006-12-23 | 2008-03-05 | 厦门三优光机电科技开发有限公司 | PIN structure 4H-SiC ultraviolet photoelectric detector |
| CN102859661A (en) * | 2010-04-14 | 2013-01-02 | 住友电气工业株式会社 | Silicon carbide semiconductor device and method for manufacturing same |
| CN103094073A (en) * | 2013-01-17 | 2013-05-08 | 上海师范大学 | Preparation method of semi-insulating silicon carbide substrate titanium ohmic contact electrode |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107123593A (en) * | 2017-04-11 | 2017-09-01 | 山东大学 | One kind mixes germanium carborundum Ohmic contact forming method |
| CN107369617A (en) * | 2017-07-06 | 2017-11-21 | 西安交通大学 | A kind of SiC high temperature ohmic contacts electrode and preparation method thereof |
| CN108899756A (en) * | 2018-06-06 | 2018-11-27 | 青岛海信宽带多媒体技术有限公司 | The deposition method of metal electrode |
| CN108899756B (en) * | 2018-06-06 | 2020-04-28 | 青岛海信宽带多媒体技术有限公司 | Method for depositing metal electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104409341B (en) | 2017-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wang et al. | Plasma-induced nanowelding of a copper nanowire network and its application in transparent electrodes and stretchable conductors | |
| CN109727846B (en) | Method for preparing two-dimensional molybdenum telluride in-plane heterojunction with metal phase in contact with semiconductor in large area and application | |
| CN104303269B (en) | Method for manufacturing silicon carbide semiconductor device | |
| CN105304703B (en) | Contact berrier field-effect tube based on graphene/silicon and preparation method thereof | |
| WO2009114446A3 (en) | A solar cell and fabrication method using crystalline silicon based on lower grade feedstock materials | |
| CN103681969B (en) | A kind of based on SiC substrate photoconductive switch preparation method | |
| CN1172551A (en) | Method of producing ohmic contact and semiconductor device | |
| Gupta et al. | Design, fabrication, and characterization of Ni/4H-SiC (0001) Schottky diodes array equipped with field plate and floating guard ring edge termination structures | |
| CN105951055B (en) | A kind of preparation method of two dimension tin alkene material | |
| CN108767108A (en) | Hall device preparation method and hall device | |
| CN104409341B (en) | The method that Ohm contact electrode is prepared in silicon carbide substrates | |
| CN102891251B (en) | Encapsulation structure and encapsulation method for graphene hall element | |
| CN103928524B (en) | Carborundum UMOSFET devices and preparation method with N-type drift layer table top | |
| CN102856141B (en) | A kind of in-situ oxidation improves the method for silicon nanowire array field emission performance | |
| CN108321212A (en) | The preparation method and its structure of SiC Schottky diode | |
| CN108321213A (en) | The preparation method and its structure of SiC power diode devices | |
| CN107919390A (en) | Based on WO3The diamond field effect transistor and production method of gate medium | |
| Liu et al. | Synthesis, characterization and fabrication of ultrathin iron pyrite (FeS 2) thin films and field-effect transistors | |
| CN103928345B (en) | Ion implanting forms the UMOSFET preparation method of N-type heavy doping drift layer table top | |
| CN106449773A (en) | GaN-based Schottky diode structure and manufacturing method thereof | |
| CN104952712B (en) | NH4F manufactures n doped graphenes and the method for electric device and the graphene and device | |
| CN110112055A (en) | A kind of minimizing technology for crystal column surface protection carbon film | |
| CN104316771B (en) | The Ohmic contact method of testing of silicon carbide device | |
| JP2008544945A (en) | Oxygen-sensitive silicon layer and method for obtaining the silicon layer | |
| CN109786447B (en) | P-type SiC ohmic contact material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |