CN104406915A - Method for detecting 8-inch polished wafer with spectroscopic ellipsometer - Google Patents
Method for detecting 8-inch polished wafer with spectroscopic ellipsometer Download PDFInfo
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- CN104406915A CN104406915A CN201410660671.0A CN201410660671A CN104406915A CN 104406915 A CN104406915 A CN 104406915A CN 201410660671 A CN201410660671 A CN 201410660671A CN 104406915 A CN104406915 A CN 104406915A
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- silicon wafer
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- polished silicon
- elliptical polarization
- polarization spectroscopy
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Abstract
The invention provides a method for detecting an 8-inch polished wafer with a spectroscopic ellipsometer. According to the method, the spectroscopic ellipsometer is used for detecting the most important optical parameter, namely, the birefringence, of the 8-inch polished wafer. The method for detecting the 8-inch polished wafer with the spectroscopic ellipsometer is high in measurement precision, wide in measurement waveband and capable of realizing nondestructive measurement and real-time online monitoring.
Description
Technical field
The present invention relates to a kind of detection method of polished silicon wafer, be specifically related to a kind of method that elliptical polarization spectroscopy detects 8 inches of polished silicon wafer.
Background technology
Along with the development of semiconductor technology, large-sized silicon wafers is more and more extensive in the application of large scale integrated circuit, just has higher requirement like this, therefore need to find one can detect large-sized silicon wafers method to the flatness of silicon chip surface and machining precision.
Elliptical polarisation spectral technology is that one utilizes linearly polarized light after sample reflection, change this character of elliptically polarized light into, to obtain the spectral measurement method of the optical constant of sample.Why oval thickness spectral technology can be widely used mainly because it has following feature: (1) measuring accuracy is high: its Measurement Resolution is than an electron microscope also high order of magnitude; (2) non-destroyed measurement: in various particle beams analytical test, the surface damage that light beam causes and cause the change of surface structure to be also minimum; (3) non-harshness measurement: to the environment measured without too high requirement; (4) several physical quantity can be measured: real part and the imaginary part that directly can measure optical constant simultaneously, not need known one to go to ask another; (5) different physical influences can be distinguished; (6) monitoring in real time can be realized: measured physical quantity can be reflected by the change after light beam itself and material effect.
At present, elliptical polarization spectroscopy is mainly used for measuring the optical parametric of membraneous material and the instrument of thickness.It is the character being studied measured matter by mensuration incident light by the situation that sample reflection or transmission rear polarizer change.
8 cun of polished silicon wafer are main products of China's large scale polished silicon wafer, are made into wave plate or delay device etc., have apply very widely in optical communication, optical measurement, astronomical optics, polarized light field.Wherein the most important optical parametric of 8 cun of polished silicon wafer is exactly birefraction, birefraction measuring accuracy will affect its performance as various compensator, delayer.Usual employing interferometric method, index of refraction meter method, the method for minimum deviation angle measure the refractive index of semiconductor material, but the degree of accuracy of this several method can only reach 10
-5, the requirement of accurately measuring 8 inches of polished silicon wafer can not be met.
Summary of the invention
For solving the problems of the technologies described above, the invention provides that a kind of measuring accuracy is high, noninvasive measurement, real time and on line monitoring, measurement wide waveband the measuring method of 8 inches of polished silicon wafer.
The technical solution adopted in the present invention is: a kind of elliptical polarization spectroscopy detects the method for 8 inches of polished silicon wafer, and described method uses elliptical polarization spectroscopy to detect 8 inches of polished silicon wafer.
Preferably, described method comprises the steps:
(1) angular setting of elliptical polarization spectroscopy left and right light pipe is spent to 0 degree-90;
(2) the 8 inches of polished silicon wafer will measured are placed on sample stage;
(3) open laser current, regulate electric current at 2mA-9mA;
(4) adjust worktable, make reflection ray enter light pipe;
(5) plug after dashboard is inserted in power supply, make it illuminate optical circle;
(6) λ/4 wave plate is rotated 45 degree on the basis of zero graduation, then rotate the polarizer and analyzer, find out the polarizer of delustring and the orientation angles of analyzer;
(7) formulae discovery birefraction is utilized.
The invention has the beneficial effects as follows: the present invention adopts the birefraction of elliptical polarization spectroscopy to 8 cun of polished silicon wafer to detect, and the degree of accuracy of measurement can reach 10
-6, far away higher than existing method; Light ball modulator in elliptical polarization spectroscopy adopts fused quartz, directly can measure the phase differential of P, S two on direction, the fluctuation of light source is avoided on the impact of measuring compared with other polarization interference method, also avoid owing to interfering extreme point to carry out the error produced when curve closes and intends, improve the measuring accuracy of birefraction; Because the birefraction of silicon chip can change along with the change of external condition, such as temperature, wavelength etc., the wavelength of elliptical polarization spectroscopy relates to all band that is infrared, visible, ultraviolet, itself has temperature monitor, the scope controlled is 0 DEG C-80 DEG C, temperature accuracy can reach 0.1 DEG C, therefore can detect the birefraction of each temperature and wavelength lower silicon slice with elliptical polarization spectroscopy.
Accompanying drawing explanation
Fig. 1 is the index path that silicon chip accurately measured by elliptical light spectrometer of the present invention.
Embodiment
Below in conjunction with accompanying drawing, specific embodiments of the invention are elaborated.
As shown in Figure 1, a kind of elliptical polarization spectroscopy detects the method for 8 inches of polished silicon wafer, comprises the steps:
(1) angular setting of elliptical polarization spectroscopy left and right light pipe is spent to 0 degree-90;
(2) the 8 inches of polished silicon wafer will measured are placed on sample stage;
(3) open laser current, regulate electric current at 2mA-9mA;
(4) adjust worktable, make reflection ray enter light pipe;
(5) plug after dashboard is inserted in power supply, make it illuminate optical circle;
(6) λ/4 wave plate is rotated 45 degree on the basis of zero graduation, λ/4 wave plate scale groove is ± 90 degree, and vernier groove is 10 calibration, then the polarizer and analyzer is rotated, find out the angle of delustring, the polarizer and analyzer dial scale are 0-180 degree, and vernier groove is 10 calibration; Utilize the position angle A of analyzer to determine ψ, the position angle P of the adjustment polarizer, make the reflected light through sample be linearly polarized light, determine Δ, θ is the incident angle that incident ray is irradiated to print surface.
(7) utilize formulae discovery birefraction, calculate the formula of birefraction:
k=tg2 ψ+sin θ.
When Ray Of Light is oblique be mapped to film surface time, in incident light wave be parallel to the plane of incidence electric field component (P-component) with perpendicular to the plane of incidence the reflectivity of electric field component (S-component), transmissivity different.When incident light is linearly polarized light, in the ordinary course of things, after the boundary reflection of film, between P-component and S-component, just create additional difference of vibration and phase differential, reflected light just becomes elliptically polarized light.Its basic thought is: the polarized light amplitude occurred when make use of the reflection on interface or film of the P-light of polarization state and S-light or transmission and phase place change to calculate measured system basic optical parameter.
Above one embodiment of the present of invention have been described in detail, but described content being only preferred embodiment of the present invention, can not being considered to for limiting practical range of the present invention.All equalizations done according to the present patent application scope change and improve, and all should still belong within patent covering scope of the present invention.
Claims (2)
1. detect a method for 8 inches of polished silicon wafer with elliptical polarization spectroscopy, it is characterized in that: described method uses elliptical polarization spectroscopy to detect 8 inches of polished silicon wafer.
2. a kind of elliptical polarization spectroscopy according to claim 1 detects the method for 8 inches of polished silicon wafer, it is characterized in that: described method comprises the steps:
(1) angular setting of elliptical polarization spectroscopy left and right light pipe is spent to 0 degree-90;
(2) the 8 inches of polished silicon wafer will measured are placed on sample stage;
(3) open laser current, regulate electric current at 2mA-9mA;
(4) adjust worktable, make reflection ray enter light pipe;
(5) plug after dashboard is inserted in power supply, make it illuminate optical circle;
(6) λ/4 wave plate is rotated 45 degree on the basis of zero graduation, then rotate the polarizer and analyzer, find out the polarizer of delustring and the orientation angles of analyzer;
(7) formulae discovery birefraction is utilized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410660671.0A CN104406915A (en) | 2014-11-18 | 2014-11-18 | Method for detecting 8-inch polished wafer with spectroscopic ellipsometer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410660671.0A CN104406915A (en) | 2014-11-18 | 2014-11-18 | Method for detecting 8-inch polished wafer with spectroscopic ellipsometer |
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| CN104406915A true CN104406915A (en) | 2015-03-11 |
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| CN201410660671.0A Pending CN104406915A (en) | 2014-11-18 | 2014-11-18 | Method for detecting 8-inch polished wafer with spectroscopic ellipsometer |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101051022A (en) * | 2007-04-06 | 2007-10-10 | 华南师范大学 | Elliptical bias detector |
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- 2014-11-18 CN CN201410660671.0A patent/CN104406915A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101051022A (en) * | 2007-04-06 | 2007-10-10 | 华南师范大学 | Elliptical bias detector |
Non-Patent Citations (1)
| Title |
|---|
| 李余蓉等: "《四川省物理学会"2005国际物理年"学术年会暨西南地区实验物理2005学术年会论文集》", 31 July 2005, 成都：电子科技大学出版社 * |
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Application publication date: 20150311 |