CN104402001A - Polycrystalline silicon hydrogenation tail gas recovery system and tail gas utilization method - Google Patents

Polycrystalline silicon hydrogenation tail gas recovery system and tail gas utilization method Download PDF

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CN104402001A
CN104402001A CN201410593306.2A CN201410593306A CN104402001A CN 104402001 A CN104402001 A CN 104402001A CN 201410593306 A CN201410593306 A CN 201410593306A CN 104402001 A CN104402001 A CN 104402001A
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hydrogenchloride
hydrogen chloride
heat exchange
vaporizer
chlorosilane
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CN104402001B (en
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牟平
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Xinjiang Daqo New Energy Co Ltd
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Xinjiang Daqo New Energy Co Ltd
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Abstract

The invention discloses a polycrystalline silicon hydrogenation tail gas recovery system and a tail gas utilization method. The system comprises a hydrogen chloride storage tank used for storing low-temperature hydrogen chloride liquid; an absorption tower rich liquid heat exchanger where absorption tower rich liquid and desorption tower silicon chloride poor liquid are subjected to heat exchange; a hydrogen chloride evaporator with a tube pass inlet connected to the absorption tower rich liquid heat exchanger and a shell pass connected to the hydrogen chloride storage tank, wherein chlorosilane poor liquid obtained after heat exchange enters the tube pass of the hydrogen chloride evaporator; a freon evaporator connected to the outlet of the tube pass of the hydrogen chloride evaporator and with which chlorosilane poor liquid from the hydrogen chloride evaporator tube pass is refrigerated and delivered to the absorption tower; and a rectification chlorosilane heat exchanger connected to the shell pass of the hydrogen chloride evaporator. Hydrogen chloride from the shell pass of the hydrogen chloride evaporator is subjected to heat exchange in the rectification chlorosilane heat exchanger with chlorosilane which is to be rectified, and is delivered to a trichlorosilane synthesis process. With the system and the method, energy consumption can be reduced, and hydrogenation reaction production capacity can be improved.

Description

Polysilicon hydrogenation exhaust gas recovery system and waste gas utilization method
Technical field
The present invention relates to polysilicon preparing technical field, particularly relate to a kind of polysilicon hydrogenation exhaust gas recovery system and waste gas utilization method.
Background technology
Improved Siemens is produced in polysilicon process, the hydrogenchloride that hydrogenation produces is after condensation separation, boosting absorb, parse hydrogen chloride gas from Analytic Tower and become hydrogen chloride liquid through being cooled to-40 DEG C, a part is back to Analytic Tower and maintains tower top temperature, and a part of extraction delivers to trichlorosilane synthesis by going the chlorosilane in rectifying workshop to be heated to be hydrogen chloride gas.-40 DEG C of hydrogen chloride liquid deliver to trichlorosilane synthesis by going the chlorosilane in rectifying workshop to be heated to be hydrogen chloride gas, the a large amount of colds wherein carried are slatterned, and Analytic Tower chlorosilane lean solution and absorption tower chlorosilane rich solution heat exchange are to after-15 DEG C--20 DEG C, need a large amount of freonll-11 deep cooling.Cold as can be seen here wherein entrained by-40 DEG C of hydrogen chloride liquid fails Appropriate application.
Summary of the invention
In view of this, the embodiment of the present invention provides a kind of polysilicon hydrogenation exhaust gas recovery system and waste gas utilization method, and main purpose reduces energy consumption, promotes the production capacity of hydrogenation.
For achieving the above object, the present invention mainly provides following technical scheme:
On the one hand, embodiments provide a kind of polysilicon hydrogenation exhaust gas recovery system, comprising:
Hydrogenchloride storage tank, stores from rectifying tower 2 top low temperature hydrogen chloride liquid;
Absorption tower rich solution interchanger, described absorption tower rich solution interchanger receives the silicon chlorides lean solution of absorption tower rich solution and Analytic Tower, described absorption tower rich solution and the heat exchange in the rich solution interchanger of described absorption tower of Analytic Tower silicon chlorides lean solution;
Hydrogenchloride vaporizer, its tube-side inlet is connected with absorption tower rich solution interchanger, and the chlorosilane lean solution after heat exchange enters the tube side of hydrogenchloride vaporizer, and the shell side inlet of described hydrogenchloride vaporizer connects hydrogenchloride storage tank;
Freon-Evaporator, connects the outlet of hydrogenchloride vaporizer tube side, and described Freon-Evaporator sends into absorption tower to from after the chlorosilane lean solution refrigeration of hydrogenchloride vaporizer tube side;
Remove rectifying chlorosilane interchanger, connect hydrogenchloride vaporizer shell-side outlet, the hydrogenchloride from hydrogenchloride vaporizer shell side is delivered to trichlorosilane and synthesizes after going in rectifying chlorosilane interchanger and going the chlorosilane heat exchange of rectifying.
As preferably, the entrance of the tube side of described hydrogenchloride vaporizer is connected by the first bypass duct with outlet, is respectively equipped with valve on described first bypass duct and between the gangway of the tube side of the first bypass duct and hydrogenchloride vaporizer.
As preferably, between described hydrogenchloride storage tank and hydrogenchloride vaporizer, be provided with hydrogen chloride flow adjustable valve.
As preferably, the entrance of the shell side of described hydrogenchloride vaporizer is connected by the second bypass duct with outlet, is respectively equipped with valve on described second bypass duct and between the gangway of the shell side of the second bypass duct and hydrogenchloride vaporizer.
On the other hand, embodiments provide a kind of polysilicon hydrogenation waste gas utilization method, comprise the steps;
From silicon chlorides lean solution and the absorption tower rich solution heat exchange of Analytic Tower;
Silicon chlorides lean solution after heat exchange carries out heat exchange as heating agent and the low temperature chlorination hydrogen liquid as refrigerant;
After deep cooling, the hydrogen chloride gas produced in absorptive tower absorbent absorption extraction hydrogenation is used as with the silicon chlorides lean solution after hydrogen chloride liquid heat exchange;
With the hydrogenchloride after the heat exchange of silicon chlorides lean solution as refrigerant with go the chlorosilane in rectifying workshop again to deliver to trichlorosilane after heat exchange to synthesize as heating agent.
As preferably, regulate according to the chlorination hydrogen amount produced in hydriding process with the flow of the hydrogen chloride liquid of silicon chlorides lean solution heat exchange.
As preferably, be down to-20 DEG C ~-25 DEG C with temperature after silicon chlorides lean solution and the hydrogen chloride liquid heat exchange of-40 DEG C of-15 DEG C ~-20 DEG C after the rich solution heat exchange of absorption tower, the silicon chlorides lean solution deep cooling of-20 DEG C ~-25 DEG C is to the hydrogen chloride gas being used as after-42 DEG C ~-44 DEG C to produce in absorptive tower absorbent absorption extraction hydrogenation; Rise to-15 DEG C ~-20 DEG C with the hydrogenchloride temperature after the heat exchange of silicon chlorides lean solution ,-15 DEG C ~-20 DEG C hydrogen chloride gas are delivered to trichlorosilane synthesis after going 30 of rectifying workshop DEG C ~ 35 DEG C chlorosilanes again to heat.
Compared with prior art, beneficial effect of the present invention is:
A large amount of colds entrained in-40 DEG C of hydrogen chloride liquid of being resolved by Analytic Tower in hydrogenation tail gas have been carried out Appropriate application by the embodiment of the present invention, decrease the consumption of freonll-11 in Freon-Evaporator, thus reduce the load of spiral-lobe compressor, break the hydrogenation production capacity bottleneck because spiral-lobe compressor oepration at full load brings, improve hydrogenation production capacity.
Accompanying drawing explanation
Fig. 1 is structure and the schematic flow sheet of the polysilicon hydrogenation exhaust gas recovery system of the embodiment of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail, but not as a limitation of the invention.In the following description, the not necessarily same embodiment that different " embodiment " or " embodiment " refers to.In addition, special characteristic, structure or feature in one or more embodiment can be combined by any suitable form.
Fig. 1 is structure and the schematic flow sheet of the polysilicon hydrogenation exhaust gas recovery system of the embodiment of the present invention.As shown in Figure 1, polysilicon hydrogenation exhaust gas recovery system, comprising:
Hydrogenchloride storage tank 1, stores the low temperature chlorination hydrogen liquid from rectifying tower 2 top;
Absorption tower rich solution interchanger 3, absorption tower rich solution interchanger 3 receives the silicon chlorides lean solution of absorption tower 4 rich solution and Analytic Tower 5, absorption tower 4 rich solution and the heat exchange in absorption tower rich solution interchanger 3 of Analytic Tower 5 silicon chlorides lean solution;
Hydrogenchloride vaporizer 6, its tube-side inlet is connected with absorption tower rich solution interchanger 3, and the chlorosilane lean solution after heat exchange enters the tube side of hydrogenchloride vaporizer 6, and the shell side inlet of hydrogenchloride vaporizer 6 connects hydrogenchloride storage tank 1;
Freon-Evaporator 7, connects the outlet of hydrogenchloride vaporizer 6 tube side, and Freon-Evaporator 7 sends into absorption tower 4 to from after the chlorosilane lean solution refrigeration of hydrogenchloride vaporizer 6 tube side;
Remove rectifying chlorosilane interchanger 8, connect hydrogenchloride vaporizer 6 shell-side outlet, the hydrogenchloride from hydrogenchloride vaporizer 6 shell side is delivered to trichlorosilane and synthesizes after going in rectifying chlorosilane interchanger 8 and going the chlorosilane heat exchange of rectifying.
A large amount of colds entrained in-40 DEG C of hydrogen chloride liquid of being resolved by Analytic Tower in hydrogenation tail gas have been carried out Appropriate application by the embodiment of the present invention, decrease the consumption of freonll-11 in Freon-Evaporator, thus reduce the load of spiral-lobe compressor, break the hydrogenation production capacity bottleneck because spiral-lobe compressor oepration at full load brings, improve hydrogenation production capacity.
The polysilicon hydrogenation waste gas utilization method that the embodiment of the present invention provides, comprises the steps;
From Analytic Tower 5 silicon chlorides lean solution with from absorption tower 4 containing the heat exchange of HCL chlorosilane rich solution;
Silicon chlorides lean solution after heat exchange carries out heat exchange as heating agent and the low temperature chlorination hydrogen liquid as refrigerant;
After deep cooling, the hydrogen chloride gas produced in absorptive tower absorbent absorption extraction hydrogenation is used as with the silicon chlorides lean solution after hydrogen chloride liquid heat exchange;
With the hydrogenchloride after the heat exchange of silicon chlorides lean solution as refrigerant with go the chlorosilane in rectifying workshop again to deliver to trichlorosilane after heat exchange to synthesize as heating agent.
Below in conjunction with Fig. 1, the exhaust gas recovery system of this law embodiment and waste gas utilization method are described.
Silicon chlorides lean solution from Analytic Tower 5 and absorption tower rich solution (containing HCL chlorosilane rich solution) from absorption tower 4 are in absorption tower rich solution interchanger 3 after heat exchange, silicon chlorides lean solution is to hydrogenchloride vaporizer 6, the chlorosilane lean solution of now-15 DEG C ~-20 DEG C is that heating agent enters hydrogenchloride vaporizer 6 tube side, in hydrogenchloride storage tank 1 ,-40 DEG C of hydrogen chloride liquid do refrigerant and enter hydrogenchloride vaporizer 6 shell side, the pipeline connecting hydrogenchloride storage tank 1 and hydrogenchloride interchanger 6 shell side inlet increases a hydrogen chloride flow adjustable valve 9, hydrogenchloride is regulated to enter the flow of hydrogenchloride vaporizer 6 according to the chlorination hydrogen amount produced in hydriding process in rectifying tower 2.After hydrogenchloride vaporizer 6 heat exchange, the chlorosilane lean solution of-15 DEG C ~-20 DEG C can be cooled to-20 DEG C to about-25 DEG C, and the chlorosilane lean solution of-20 DEG C to-25 DEG C is used as to-42 DEG C ~-44 DEG C the hydrogen chloride gas produced in the absorption agent absorption extraction hydrogenation of absorption tower 4 through Freon-Evaporator 7 deep cooling again.Increase by the first bypass duct 10 in hydrogenchloride vaporizer 6 tube side gangway, and respective valves is set, so that the chlorosilane lean solution of-15 DEG C ~-20 DEG C can get around hydrogenchloride vaporizer 6 and directly enters Freon-Evaporator and carry out deep cooling in without the available situation of hydrogenchloride.
The hydrogen chloride gas temperature of hydrogenchloride vaporizer 6 shell-side outlet rises to-15 DEG C ~ about-20 DEG C, temperature is still lower, in order to not impact trichlorosilane synthesis ,-15 DEG C ~-20 DEG C hydrogen chloride gas are delivered to trichlorosilane synthesis after going 30 of rectifying workshop DEG C of-35 DEG C of chlorosilanes again to heat.Between hydrogenchloride vaporizer 6 shell side gangway, increase by the second bypass duct 11, and respective valves is set, so that when hydrogenchloride vaporizer 6 occurs abnormal,-40 DEG C of hydrogen chloride liquid directly can be delivered to after rectifying chlorosilane interchanger 8 heats, become gaseous hydrogen chloride and deliver to trichlorosilane synthesis.
Below by application example, effect of the present invention is described.
Example one:
-19.6 DEG C, 130M 3the chlorosilane lean solution of/H enters hydrogenchloride vaporizer tube side, enters the mutual heat exchange of shell side with-40 DEG C of hydrogen chloride liquid, delivers to Freon-Evaporator deep cooling after the chlorosilane lean solution of-19.6 DEG C is down to-25.2 DEG C.-40 DEG C of hydrogen chloride liquid are changed to-17.9 DEG C, 2400M 3/ H hydrogen chloride gas goes trichlorosilane to synthesize after delivering to the heat exchange of rectifying chlorosilane interchanger again.
In this example, because reducing the consumption of freonll-11 in Freon-Evaporator, reduce spiral-lobe compressor operating load.Meeting under screw machine oepration at full load condition, hydrogenation silicon tetrachloride feeding amount 10 tons/H can increased.
Example two:
-19.59 DEG C, 130M 3the chlorosilane lean solution of/H enters hydrogenchloride vaporizer tube side, enters the mutual heat exchange of shell side with-40 DEG C of hydrogen chloride liquid, delivers to Freon-Evaporator deep cooling after the chlorosilane lean solution of-19.56 DEG C can being down to-26.22 DEG C.-40 DEG C of hydrogen chloride liquid are changed to-19.11 DEG C, 2600M 3/ H hydrogen chloride gas goes trichlorosilane to synthesize after delivering to the heat exchange of rectifying chlorosilane interchanger again.
In this example, because decreasing the consumption of freonll-11 in Freon-Evaporator, reduce spiral-lobe compressor operating load.Meeting under screw machine oepration at full load condition, hydrogenation silicon tetrachloride feeding amount 15 tons/H can increased.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; change can be expected easily or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of described claim.

Claims (7)

1. polysilicon hydrogenation exhaust gas recovery system, is characterized in that, comprising:
Hydrogenchloride storage tank, stores the low temperature chlorination hydrogen liquid from rectifying tower top;
Absorption tower rich solution interchanger, described absorption tower rich solution interchanger receives the silicon chlorides lean solution of absorption tower rich solution and Analytic Tower, described absorption tower rich solution and the heat exchange in the rich solution interchanger of described absorption tower of silicon chlorides lean solution;
Hydrogenchloride vaporizer, its tube-side inlet is connected with absorption tower rich solution interchanger, and the chlorosilane lean solution after heat exchange enters the tube side of hydrogenchloride vaporizer, and the shell side inlet of described hydrogenchloride vaporizer connects hydrogenchloride storage tank;
Freon-Evaporator, connects the outlet of hydrogenchloride vaporizer tube side, and described Freon-Evaporator sends into absorption tower to from after the chlorosilane lean solution refrigeration of hydrogenchloride vaporizer tube side;
Remove rectifying chlorosilane interchanger, connect hydrogenchloride vaporizer shell-side outlet, the hydrogenchloride from hydrogenchloride vaporizer shell side is delivered to trichlorosilane and synthesizes after going in rectifying chlorosilane interchanger and going the chlorosilane heat exchange of rectifying.
2. polysilicon hydrogenation exhaust gas recovery system according to claim 1, it is characterized in that, the entrance of the tube side of described hydrogenchloride vaporizer is connected by the first bypass duct with outlet, is respectively equipped with valve on described first bypass duct and between the gangway of the tube side of the first bypass duct and hydrogenchloride vaporizer.
3. polysilicon hydrogenation exhaust gas recovery system according to claim 1, is characterized in that, is provided with hydrogen chloride flow adjustable valve between described hydrogenchloride storage tank and hydrogenchloride vaporizer.
4. polysilicon hydrogenation exhaust gas recovery system according to claim 1, it is characterized in that, the entrance of the shell side of described hydrogenchloride vaporizer is connected by the second bypass duct with outlet, is respectively equipped with valve on described second bypass duct and between the gangway of the shell side of the second bypass duct and hydrogenchloride vaporizer.
5. polysilicon hydrogenation waste gas utilization method, is characterized in that, comprise the steps;
From silicon chlorides lean solution and the absorption tower rich solution heat exchange of Analytic Tower;
Silicon chlorides lean solution after heat exchange carries out heat exchange as heating agent and the low temperature chlorination hydrogen liquid as refrigerant;
After deep cooling, the hydrogen chloride gas produced in absorptive tower absorbent absorption extraction hydrogenation is used as with the silicon chlorides lean solution after hydrogen chloride liquid heat exchange;
With the hydrogenchloride after the heat exchange of silicon chlorides lean solution as refrigerant with go the chlorosilane in rectifying workshop again to deliver to trichlorosilane after heat exchange to synthesize as heating agent.
6. polysilicon hydrogenation waste gas utilization method according to claim 5, is characterized in that, regulates according to the chlorination hydrogen amount produced in hydriding process with the flow of the hydrogen chloride liquid of silicon chlorides lean solution heat exchange.
7. polysilicon hydrogenation waste gas utilization method according to claim 5, it is characterized in that, be down to-20 DEG C ~-25 DEG C with temperature after silicon chlorides lean solution and the hydrogen chloride liquid heat exchange of-40 DEG C of-15 DEG C ~-20 DEG C after the rich solution heat exchange of absorption tower, the silicon chlorides lean solution deep cooling of-20 DEG C ~-25 DEG C is to the hydrogen chloride gas being used as after-42 DEG C ~-44 DEG C to produce in absorptive tower absorbent absorption extraction hydrogenation; Rise to-15 DEG C ~-20 DEG C with the hydrogenchloride temperature after the heat exchange of silicon chlorides lean solution ,-15 DEG C ~-20 DEG C hydrogen chloride gas are delivered to trichlorosilane synthesis after going 30 of rectifying workshop DEG C ~ 35 DEG C chlorosilanes again to heat.
CN201410593306.2A 2014-10-29 2014-10-29 Polysilicon hydrogenation exhaust gas recovery system and waste gas utilization method Active CN104402001B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106268162A (en) * 2015-06-12 2017-01-04 新特能源股份有限公司 A kind of exhaust gas recovery system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6221706A (en) * 1985-07-22 1987-01-30 Nippon Steel Corp Recycling production of silicon or silicon compound via trichlorosilane
CN102039082A (en) * 2010-06-09 2011-05-04 特变电工新疆硅业有限公司 Method and device for vaporizing hydrogen chloride in tail gas in polycrystalline silicon production
CN102431972A (en) * 2011-09-01 2012-05-02 上海优华系统集成技术有限公司 Desorption tower heat energy utilization system for recovering hydrogen chloride in polycrystalline silicon production

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6221706A (en) * 1985-07-22 1987-01-30 Nippon Steel Corp Recycling production of silicon or silicon compound via trichlorosilane
CN102039082A (en) * 2010-06-09 2011-05-04 特变电工新疆硅业有限公司 Method and device for vaporizing hydrogen chloride in tail gas in polycrystalline silicon production
CN102431972A (en) * 2011-09-01 2012-05-02 上海优华系统集成技术有限公司 Desorption tower heat energy utilization system for recovering hydrogen chloride in polycrystalline silicon production

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106268162A (en) * 2015-06-12 2017-01-04 新特能源股份有限公司 A kind of exhaust gas recovery system
CN106268162B (en) * 2015-06-12 2019-05-17 新特能源股份有限公司 A kind of exhaust gas recovery system

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Address after: No. 16 Weiliu Road, New Chemical Materials Industrial Park, Shihezi Economic Development Zone, Xinjiang Uygur Autonomous Region, 832000

Patentee after: Xinjiang DAQO New Energy Co., Ltd.

Address before: Weiliu Road, New Chemical Materials Industrial Park, Shihezi Economic Development Zone, Xinjiang Uygur Autonomous Region, 832000

Patentee before: Xinjiang Daqo New Energy Co.,Ltd.