CN104401932B - A kind of preparation method with the aluminum nitride piezoelectric film device of duplexer functionality - Google Patents
A kind of preparation method with the aluminum nitride piezoelectric film device of duplexer functionality Download PDFInfo
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- CN104401932B CN104401932B CN201410794021.5A CN201410794021A CN104401932B CN 104401932 B CN104401932 B CN 104401932B CN 201410794021 A CN201410794021 A CN 201410794021A CN 104401932 B CN104401932 B CN 104401932B
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Abstract
The invention discloses a kind of aluminum nitride piezoelectric film device with duplexer functionality, comprise silicon substrate, insulating barrier, bottom electrode, I aluminum nitride thin rete, target, II aluminum nitride thin rete and top electrode from the bottom to top successively, the C axle of described I aluminum nitride thin rete and II aluminum nitride thin rete tilts with silicon substrate (1) and both incline directions are contrary; Wherein Si-Substrate Thickness is 300 ~ 700um, and described insulating barrier is silicon dioxide layer, and its thickness is 250-350nm, and bottom electrode material is Mo or Ti/Pt, and target material is Ir or Mo, and bottom electrode and intermediate electrode layer thickness are 120 ~ 160nm; Described top electrode material is Al, and its thickness is 1000 ~ 1200nm.Proposing of the invention has double-deck C axis inclined AlN piezoelectric membrane Rotating fields, and under liquid phase working environment, this structure significantly can improve the sensitivity of sensor, realizes the two-way communication of film bulk acoustic wave device and reduces its volume.
Description
Technical field
The invention belongs to MOEMS field, relate to the aluminum nitride piezoelectric film device with duplexer functionality, liquid phase environment is applicable to, aluminium nitride (AlN) piezoelectric thin film device that the double-deck C axle with duplexer functionality tilts and preparation method thereof in particular to one.
Background technology
Aluminum nitride piezoelectric film has the advantage of the high velocity of sound, high temperature resistant, stable performance, and compatible with CMOS technology, is subject to domestic and international extensive concern.The MEMS being prepared as core technology with AlN piezoelectric membrane has been widely used in the fields such as sensor, resonator and energy harvester.
When the FBAR being core technology with silica-based AlN film preparation is applied to liquid detecting, if bulk acoustic wave is with telescopic work pattern, then acoustic wave energy reduces the detection sensitivity of sensor by losing in a large number in a liquid; And bulk acoustic wave is when working with thickness shearing mode, sound wave energy loss is in a liquid little, is conducive to the sensitivity and the quality factor that improve sensor; In addition, the detection system formed with the film bulk acoustic wave device of single-mode communication is not only bulky, also can bring inconvenience for the process of follow-up signal.
Therefore, preparation can the piezoelectric membrane that tilts of excited thickness shear mode, the double-deck C axle with duplexer functionality very necessary.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of aluminum nitride piezoelectric film device with duplexer functionality.
For achieving the above object, the invention provides following technical scheme:
A kind of aluminum nitride piezoelectric film device with duplexer functionality, comprise silicon substrate, insulating barrier, bottom electrode, I aluminum nitride thin rete, target, II aluminum nitride thin rete and top electrode from the bottom to top successively, the C axle of described I aluminum nitride thin rete and II aluminum nitride thin rete tilts with silicon substrate and both incline directions are contrary.
Preferred as aluminum nitride piezoelectric film device of the present invention, the wirebonding region of described bottom electrode upper surface is also compounded with the metallic aluminum for wire bonding.
Another kind as aluminum nitride piezoelectric film device of the present invention is preferred, and described Si-Substrate Thickness is 300 ~ 700um, and described insulating barrier is silicon dioxide layer, and its thickness is 250 ~ 350nm.
Another kind as aluminum nitride piezoelectric film device of the present invention is preferred, and described bottom electrode material is Mo or Ti/Pt, and its thickness is 120 ~ 160nm.
As aluminum nitride piezoelectric film device of the present invention further preferably, described target material is Ir or Mo, and its thickness is 120 ~ 160nm.
As aluminum nitride piezoelectric film device of the present invention further preferably, described top electrode material is Al, and its thickness is 1000 ~ 1200nm.
As aluminum nitride piezoelectric film device of the present invention further preferably, the thickness of described I aluminum nitride thin rete and II aluminum nitride thin rete is 0.8 ~ 1.2 μm.The invention also discloses the method for the aluminum nitride piezoelectric film device described in preparation with duplexer functionality, comprise the following steps:
1) to get thickness be the silicon chip of 300 ~ 700um is substrate;
2) Double-side hot oxidation 1) selected substrate, its upper and lower surface is formed respectively SiO that thickness is 250 ~ 350nm
2layer;
3) at top SiO
2layer superficial growth Mo or Ti/Pt lower electrode layer are also graphical, and controlling its thickness is 200 ~ 250nm;
4) growth regulation I aluminum nitride thin rete, Ir or Mo intermediate electrode layer and II aluminum nitride thin rete are also graphical respectively successively on Mo or Ti/Pt electrode to adopt magnetron sputtering technique;
5) on II aluminum nitride thin rete, Al upper electrode layer is grown also graphical;
6) first etching removes silicon substrate bottom SiO
2layer, is then the aluminium lamination of 80 ~ 100nm and graphical at silicon substrate bottom growth thickness;
7) with Al layer for masking layer, plasma etching silicon substrate is to top SiO
2layer, forms the hole of through-silicon substrate.
Especially, step 4) control I aluminum nitride thin rete and II aluminum nitride thin thicknesses of layers be 0.8 ~ 1.2 μm, Ir or Mo target layer thickness is 120 ~ 160nm.
Beneficial effect of the present invention is:
Proposing of the invention has double-deck C axis inclined AlN piezoelectric membrane Rotating fields, and under liquid phase working environment, this structure significantly can improve the sensitivity of sensor, realizes the two-way communication of film bulk acoustic wave device and reduces its volume; The present invention the is preferred further each layer thickness of this piezoelectric thin film layer and raw material, this is for acquisition high performance piezoelectric film layer structure no less important; When the present invention prepares piezoelectric membrane Rotating fields, by arranging intermediate electrode layer between I aluminum nitride thin rete and II aluminum nitride thin rete, adjusting the angled manner of I, II aluminum nitride thin rete, making this device have bi-directional communication function; The present invention considers the needs of device wire bonding, uses aluminum metal as the direct contact material of wire bonding.
Accompanying drawing explanation
In order to make object of the present invention, technical scheme and beneficial effect clearly, the invention provides following accompanying drawing and being described:
Fig. 1 is that the present invention has double-deck C axis inclined AlN piezoelectric thin film layer structural representation;
Fig. 2 is the aluminum nitride piezoelectric film device step 1 that embodiment 1 preparation has duplexer functionality) schematic diagram;
Fig. 3 is the aluminum nitride piezoelectric film device step 2 that embodiment 1 preparation has duplexer functionality) schematic diagram;
Fig. 4 is the aluminum nitride piezoelectric film device step 3 that embodiment 1 preparation has duplexer functionality) schematic diagram;
Fig. 5 is the aluminum nitride piezoelectric film device step 4 that embodiment 1 preparation has duplexer functionality) schematic diagram;
Fig. 6 is the aluminum nitride piezoelectric film device step 5 that embodiment 1 preparation has duplexer functionality) schematic diagram;
Fig. 7 is the aluminum nitride piezoelectric film device step 6 that embodiment 1 preparation has duplexer functionality) schematic diagram.
Detailed description of the invention
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
Following examples are by open a kind of aluminum nitride piezoelectric film device with duplexer functionality, as shown in Figure 1: comprise silicon substrate 1, insulating barrier 2, bottom electrode 3, I aluminum nitride thin rete 4, target 5, II aluminum nitride thin rete 6 and top electrode 7 from the bottom to top successively, the C axle of described I aluminum nitride thin rete 4 and II aluminum nitride thin rete 6 tilts with silicon substrate 1 and both incline directions are contrary.(C axle tilts to refer to column crystal and the substrate angle on-right angle of aluminium nitride film)
Wherein: described silicon substrate 1 lower surface is also compounded with the metallic aluminum for wire bonding;
Silicon substrate 1 thickness is 300 ~ 700um, and insulating barrier 2 is silicon dioxide layer, and its thickness is 250 ~ 350nm;
Bottom electrode 3 material is Mo or Ti/Pt (Ti, Pt composite bed), and its thickness is 120 ~ 160nm;
Target 5 material is Ir or Mo, and its thickness is 120 ~ 160nm;
Top electrode 7 material is Al, and its thickness is 1000 ~ 12000nm;
The thickness of described I aluminum nitride thin rete 4 and II aluminum nitride thin rete 6 is 0.8 ~ 1.2 μm.
Embodiment 1:
The present embodiment preparation has the method for the aluminum nitride piezoelectric film device of duplexer functionality, specifically comprises the following steps:
As shown in Figure 1, first get 4 inches of N-type silicon chip (100 face) is substrate 1 to a, and its thickness is 500um, then Double-side hot oxidation 1) selected substrate, its upper and lower surface is formed respectively SiO that thickness is 300nm
2layer 2;
B as shown in Figure 2, at top SiO
2layer 2 superficial growth Mo lower electrode layer 3 are also graphical, and controlling its thickness is 120 ~ 160nm;
As shown in Figure 3, growth regulation I aluminum nitride thin rete 4, Ir intermediate electrode layer 5 and II aluminum nitride thin rete 6 are also graphical respectively successively on Mo electrode to adopt magnetron sputtering technique for c; Control magnetron sputtering process, make I aluminum nitride thin rete 4 and II aluminum nitride thin thicknesses of layers 6 be respectively 1um, Ir intermediate electrode layer 5 thickness is 120nm;
D as shown in Figure 4, II aluminum nitride thin rete 6 grows Al upper electrode layer 7 also graphical; Control Al upper electrode layer 7 thickness is 1000nm; (being at this moment also compounded with the metallic aluminum for wire bonding in the upper surface wirebonding region of bottom electrode 3)
As shown in Figure 5, first reactive ion etching removes silicon substrate bottom SiO to e
2layer 2, is then the aluminium lamination 8 of 100nm and graphical at silicon substrate bottom growth thickness;
F as shown in Figure 6, with Al layer 8 for masking layer, inductively coupled plasma etching silicon substrate 1 to top SiO
2layer 3,
Form the hole 9 of through-silicon substrate.
Proposing of the invention has double-deck C axis inclined AlN piezoelectric membrane Rotating fields, and under liquid phase working environment, this structure significantly can improve the sensitivity of sensor, realizes the two-way communication of film bulk acoustic wave device and reduces its volume; The present invention the is preferred further each layer thickness of this piezoelectric thin film layer and raw material, this is for acquisition high performance piezoelectric film layer structure no less important; When the present invention prepares piezoelectric membrane Rotating fields, by arranging intermediate electrode layer between I aluminum nitride thin rete and II aluminum nitride thin rete, reasonably have adjusted the angled manner of I, II aluminum nitride thin rete; The present invention considers the needs of device wire bonding, uses aluminum metal as the direct contact material of wire bonding.
What finally illustrate is, above preferred embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although by above preferred embodiment to invention has been detailed description, but those skilled in the art are to be understood that, various change can be made to it in the form and details, and not depart from claims of the present invention limited range.
Claims (3)
1. preparation has the method for the aluminum nitride piezoelectric film device of duplexer functionality, it is characterized in that, the described aluminum nitride piezoelectric film device with duplexer functionality comprises silicon substrate (1), insulating barrier (2), bottom electrode (3), I aluminum nitride thin rete (4), target (5), II aluminum nitride thin rete (6) and top electrode (7) from the bottom to top successively, and the C axle of described I aluminum nitride thin rete (4) and II aluminum nitride thin rete (6) tilts with silicon substrate (1) and both incline directions are contrary; Described silicon substrate (1) thickness is 300 ~ 700um; Described insulating barrier (2) is silicon dioxide layer, and its thickness is 250 ~ 350nm; Described bottom electrode (3) material is Mo or Ti/Pt, and its thickness is 120 ~ 160nm; Described target (5) material is Ir or Mo, and described top electrode (7) material is Al;
Its preparation method comprises the following steps:
1) to get thickness be the silicon chip of 300 ~ 700um is substrate;
2) Double-side hot oxidation 1) selected substrate, its upper and lower surface is formed respectively SiO that thickness is 250 ~ 350nm
2layer;
3) at top SiO
2layer superficial growth Mo or Ti/Pt lower electrode layer are also graphical, and controlling its thickness is 120 ~ 160nm;
4) growth regulation I aluminum nitride thin rete, Ir or Mo intermediate electrode layer and II aluminum nitride thin rete are also graphical respectively successively on Mo or Ti/Pt lower electrode layer to adopt magnetron sputtering technique;
5) on II aluminum nitride thin rete, Al upper electrode layer is grown also graphical;
6) first etching removes silicon substrate bottom SiO
2layer, is then the aluminium lamination of 80 ~ 100nm and graphical at silicon substrate bottom growth thickness;
7) with Al layer for masking layer, plasma etching silicon substrate is to top SiO
2layer, forms the hole of through-silicon substrate.
2. preparation has the method for the aluminum nitride piezoelectric film device of duplexer functionality according to claim 1, it is characterized in that: step 4) control I aluminum nitride thin rete and II aluminum nitride thin thicknesses of layers be 0.8 ~ 1.2 μm, Ir or Mo target layer thickness is 120 ~ 160nm.
3. preparation has the method for the aluminum nitride piezoelectric film device of duplexer functionality according to claim 1, it is characterized in that: step 5) control Al upper electrode layer thickness is 1000 ~ 1200nm.
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| US5481396A (en) * | 1994-02-23 | 1996-01-02 | Aura Systems, Inc. | Thin film actuated mirror array |
| JP4496091B2 (en) * | 2004-02-12 | 2010-07-07 | 株式会社東芝 | Thin film piezoelectric actuator |
| DE102005043034A1 (en) * | 2005-09-09 | 2007-03-15 | Siemens Ag | Apparatus and method for moving a liquid |
| CN101775584A (en) * | 2010-01-08 | 2010-07-14 | 湖北大学 | Preparation method of c-axis inclined AlN thin film with homogeneous buffer layer |
| CN103344328B (en) * | 2013-07-15 | 2015-01-07 | 河北大学 | Horizontal thermoelectric optical detector of multilayer structure |
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