CN104396226B - For provide daytime scene and night scenes improved image system - Google Patents

For provide daytime scene and night scenes improved image system Download PDF

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Publication number
CN104396226B
CN104396226B CN201380031880.2A CN201380031880A CN104396226B CN 104396226 B CN104396226 B CN 104396226B CN 201380031880 A CN201380031880 A CN 201380031880A CN 104396226 B CN104396226 B CN 104396226B
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pixel
grid
control
transfer gate
light source
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CN104396226A (en
Inventor
约阿夫·格劳尔
奥弗·大卫
亚阿拉·大卫
海姆·加滕
艾伦·克雷勃伊姆
莎伦·利夫希茨
奥伦·谢赫
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Brightway Vision Ltd
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Brightway Vision Ltd
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H01L27/14656—Overflow drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14875—Infrared CCD or CID imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
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    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/623—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by evacuation via the output or reset lines
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation

Abstract

In the daytime the system that the improved image of scene and night scenes is provided there is provided herein a kind of beholder in the vehicles.The system includes：There is the pel array sensor for the grid rupture capacity sheltered completely in single pixel level, wherein, pel array sensor is provided with intrinsic anti-blooming ability in single pixel level；Wherein, by having the transfer gate transistor of high transfer gate efficiency to carry out grid-control to each pixel accordingly.The system also includes grid-control unit and processing unit, the grid-control unit is configured as the active light source modulated with pulse or continuous wave and passive sources control transfer gate transistor to produce synchronous sensing signal from sensor, and wherein individual pulse is enough to cover the whole depth of field of the scene of the whole visual field of sensor and irradiation；Processing unit is configured as receiving synchronous sensing signal and it is handled.

Description

For provide daytime scene and night scenes improved image system
Technical field
The present invention relates to imaging system field, also, relate more specifically to by reading the multiple grid-control low noises of frame every time The method that pixel carries out active and/or passive imaging.
Background technology
Entitled " vehicle mounted night vision imaging system and method (vehicle-mounted nights Depending on imaging system and method) " US 7,733,464 B2 United States Patent (USP)s, teaching a kind of is used to improve motorized traffic work Have during low-visibility conditions (night or such as rain and snow low visibility situation night) state of visibility device and Method.System described in aforementioned patent is based on grid-control imaging technique (i.e. imaging sensor utilizes the optical signal reflected). In addition, said system is performed based on the sensor using photocathode and/or the image enhancement technique of microchannel plate.This type Image enhancement technique have the shortcomings that in vehicle environmental it is intrinsic；Because high temperature (being higher than 50 degrees Celsius) causes sensitivity Lose, because solar irradiance causes sensitivity loss, due to projecting to the constant quiescent image of photocathode, transient noise Blooming (color saturation) causes influence of burning in dynamic range between more than 50dB scene.Such image enhaucament Technology is arranged or caused difficult in such as civil applications of Senior Officer's accessory system (ADAS) according to WASSENAAR Equivalent control of export power is also defined as control of export project.In addition, the system described in above-mentioned patent due to disadvantages mentioned above not It is supplied to any imaging capability on daytime of driver.
The EP 1 of entitled " measuring distances with a camera (using video camera measurement distance) " 118 208 B1 European patents teach one kind on measuring distance using the video camera for being referred to as " 3D video cameras " Apparatus and method.With reset switch and at least one single gate switch or by field-effect transistor (FET) with reset switch and The design of multiple grid-control pixels is described at least one single-stage modulator.The design of these pixels has comprising energy-storage capacitor and put The integrator of big device.These described in the B1 patents of ' 208 these grid-control pixels design due to reset noise level (also referred to as " KTC " noise) there is low performance, reset noise (such as in terms of grid-control imaging vehicular applications) in terms of low luminance level signal Level is intrinsic in the integrator mechanical device presented with the amplifier feed-back in pixel.In addition, in pixel integration device Noise level and signal accumulation be not mentioned when when above-mentioned patent is broken.Anti- bloom between pixel to pixel separation It is based on the key character in the imaging sensor for coupling and being synchronized to the grid-control pel array on light source to overflow ratio.This In system architecture, grid-control pixel due in the scene observed and/or measured high reflection object (i.e. retroeflector, vertically In speculum of imaging sensor/light source etc.) can for blooming (i.e. saturation even as high as unsaturated is believed more than nominal More than number three magnitudes).Anti- blooming ratio between pixel to pixel separation is not described in above-mentioned patent.
The content of the invention
One aspect of the present invention, which is provided, a kind of to be used to provide improved image in the daytime with night scenes for beholder System.System according to embodiments of the present invention can be operationally associated with any mobile platform.It is non-limiting at one Embodiment in, motion platform is the vehicles.But it is reported that, any narrations of the vehicles herein can be shown that with it is any Mobile platform is used together.In one embodiment, the system is located in the vehicles.The system can include：In single pixel Level has the pel array sensor for the grid closing ability sheltered completely, wherein, pel array sensor is in single pixel level quilt It is provided with intrinsic anti-blooming ability；Wherein, by having the transfer gate transistor of high transfer gate efficiency accordingly Grid-control is carried out to each pixel.The system also includes grid-control unit, and the grid-control unit is configured as with pulse or continuous modulation The active light source (i.e. such as laser, LED, the light source part of the grid-control system of artificial light source etc.) and passive sources of ripple are (i.e. passive In this meaning, light source is not a part for the grid-control system of artificial light source etc. such as LED, but is all located at grid-control system visual field [FOV]) control transfer gate transistor from sensor to produce synchronous transducing signal, wherein the individual pulse for passing through active light source It is enough the entire depth in the field for the whole visual field and scene illuminated for covering sensor；And processing unit, it is configured as connecing Receive synchronous sensing signal and it is handled, to produce improved scene image.In certain embodiments, pel array is passed Sensor can be located in the vehicles, and therefore pass through reflection of the windshield decay from scene of the vehicles.
Another aspect of the present invention provides a kind of for strengthening the friendship being arranged on suitable under different illumination conditions The method of imaging system on logical instrument.This method include control be synchronized to grid-control irradiation source at least single pixel " unlatching " and " closing " time, the irradiation source can be active (i.e. the part of system) or passive (i.e. in this passive meaning, light source is not It is the part of the grid-control system of artificial light source etc. such as LED, but in grid-control imaging system FOV).In this technique, pixel is worked as Duration in " unlatching ", it, which will accumulate the light pulse propagated from required object and works as, is changed into " closing " duration When will ignore the pulse from noise source (such as background, high reflectance object, specific modulation etc.).Once all required pulses of light Accumulation or the other methods stored using pixel in pixel floating diffusion region (FD), then signal is read to provide single frame Image.A part of advantage that disclosed technology provides among many advantages for being better than prior art, advantage is：
There is preferable noise by the accumulation of required optical signal (pulse or modulation) and the accumulation of reduction background signal Than (SNR) image.
Scene dynamic range in height with 40dB magnitudes is anti-.For multiple grid-control pel arrays, saturated pixel to point Anti- blooming ratio between the 3rd pixel opened is higher than 1000 (60dB), and required about 10,000 (80dB).
The pulse in multiple grid-control pixel instantaneouss field of view (IFOV) of from pulse or modulation light source can be synchronized to Or modulation light.
(TOF) imaging can be carried out the direct flight time with the synchronous light source for being reflected back into multiple grid-control pixel IFOV.
Being capable of at least single single pixel of grid-control and/or grid-control at least single pixel array.
Embodiments of the invention also include following aspect：
(1) it is a kind of be used to providing daytime scene and night scenes improved image system, the system includes：
Pel array sensor, the pel array sensor has in single pixel level shelters grid rupture capacity, wherein The pel array sensor is provided with intrinsic anti-blooming ability in single pixel level, wherein, by having height accordingly The transfer gate transistor of transfer gate efficiency carries out grid-control to each pixel；With
Grid-control unit, the grid-control unit is configured as controlling the transfer gate crystal of the pel array sensor A series of pipe, to accumulate multiexposure, multiple exposures based on specified exposure parameter in each single reading of pixel.
(2) system according to (1), wherein the pel array sensor is attached to mobile platform.
(3.) system according to (1), wherein the grid-control unit is configured as being operated with flow image velocimetry.
(4) system according to (1), wherein the grid-control unit is configured as being operated with asynchronous light source.
(5) system according to (1), wherein the grid-control unit is additionally configured to by the picture of independent control at least two The transfer gate transistor of pixel at plain group, with different grid-control parameters come at least two pixel groups described in grid-control simultaneously.
(6) system according to (5), wherein the different grid-control parameters include the synchronization on one or more light sources Parameter, to match different scene volumes for different pixel groups.
(7) system according to (5), joins wherein performing the different grid-control to each pixel group in different pixels group Number, so as to perform the independent accumulation to signal.
(8) according to the system described in (1), wherein single pixel level the intrinsic anti-blooming ability described At least 60dB ratio is shown as between the saturated pixel of pel array and the second adjacent pixel.
(9) system according to (1), wherein the pixel sensor array is additionally configured to except grid-control pattern At least one pattern is operated.
(10) system according to (1), wherein the low noise in the pixel during the cycle by resetting it Potential voltage is accomplished without light source pulse or modulation of source, therefore the parasitism reduced in the photodiode makes an uproar Sound.
(11) system according to (1), wherein, by setting the pixel to the floating diffusion region of the transfer gate Between high-potential voltage realize the high transfer gate efficiency, therefore, it is possible to formed highfield, i.e. electric charge carrier have compared with High probability is drawn into the floating diffusion region.
(12) system according to (1), wherein realizing the height by setting the physical size of the transfer gate Transfer gate efficiency so that the transfer gate in the photodiode side is significantly greater tnan in the floating diffusion region side Transfer gate.
(13) system according to (1), wherein by the way that the transfer gate of the photodiode side is set to Hole is there is no to realize the high transfer gate efficiency.
(14) system according to (1), wherein the pixel is configured as model of the detection covering from 400nm to 1100nm Enclose interior light.
(15) according to the system described in (1), wherein the pixel is configured as scope of the detection covering from 700nm to 2 μm Interior light.
(16) system according to (1), wherein the pel array sensor is configured as being grasped with reference to colour filter Make.
(17) system according to (1), wherein, the active light source pulse or active light source modulation are in about 800nm NIR.
(18) system according to (1), wherein, the pel array sensor is sensitive enough to come from about 20m to detect With the distance between 200m reflection, wherein described be reflected in before the arrival pel array sensor with least two quantity Level decay.
These other and/or other aspects and/or advantage of the present invention are：Middle progress will be described in detail below old State；It may be inferred to from detailed description；And/or learnt by implementing the present invention.
Brief description of the drawings
The present invention can be more easily understood according to the detailed description of the embodiment with reference to accompanying drawing, in the accompanying drawings：
Fig. 1 is the schematic circuit diagram that " can grid-control " pixel is depicted according to some embodiments of the present invention；
Fig. 2 and Fig. 3 are the time diagrams for showing the aspect according to some embodiments of the present invention；
Fig. 4 A-4C show the formula and list used in the emulation of exemplary implementation according to some embodiments of the invention Position；And
Fig. 5 shows the simulation curve figure of the exemplary implementation according to some embodiments of the present invention.
Embodiment
Before explaining at least one embodiment of the invention in detail, it is understood that, of the invention is not applied Be limited to illustrate in description below or accompanying drawing shown in construction and arrangement details.The present invention is applied to real in a variety of ways Trample or implement other embodiments.Moreover, it is to be understood that the phraseology and terminology used herein are for descriptive purposes, And it is not construed as limitation.
Fig. 1 shows " can grid-control " that can be provided by complementary metal oxide semiconductor (CMOS) standard fabrication technique Pixel schematic diagram.Each pulse (i.e. each grid) of light can be that pinned PD photodiode (PD) is converted into The electric signal of ratio.Floating diffusion region (FD) is transferred to from the electric signal produced by PD by electric field, it serves as each conversion of accumulation Light pulse integrator (i.e. capacitor).Two controllable picture element signals produce pixel gates；Transfer gate transistor (TX1) With anti-blooming transistor (TX2).Anti- blooming transistor has three main targets；First is to work as to be coupled to TX1 (i.e. TX2 from unlatching be changed into close or TX2 from closing be changed into open) when as single light pulse grid-control mechanism part, second is anti- The unwanted parasitic signal only produced in PD is not accumulated, the 3rd the down periods (i.e. PD resets) in time TX1 in PD It is guiding excessive electric signal from PD when TX1 is opens, therefore, with the effect of anti-blooming.Anti- blooming crystal Signal controllable pipe TX2 is used as the light pulse optical switch for terminating single accumulation.Transfer gate transistor (TX1) is only desired Time and it is switched on only for being coupled in the TX2 desired duration.Once all light pulses are accumulated all in FD, Then signal by reading to provide single two field picture.
Multiple grid-control low-noise pixels can have the telecommunications of standard after " can grid-control " PD, TX1, TX2 and PD configuration Number chain.The standard electric signal chains can include playing the reset crystalline substance for carrying out FD using pixel voltage (VDD) charge charging effect Body pipe (RST), can include the source electrode that the signal of accumulation (i.e. electronics) is converted to voltage following (SF) transistor, and can With selection (SEL) transistor of the columns and/or rows including being connected to pel array.
The circuit theory diagrams depict " can grid-control " pixel with minimum five transistors (" 5T ").As Fig. 2 and As Fig. 3 is described below, the configuration of this pixel can be with sort run when " can grid-control ".In addition, the pixel can also be with mark Sort run or sort run during the 4T pixels with standard during accurate 5T pixels.The configuration of this general operation (i.e. grid-control sequence or standard 5T or standard 4T) pixel under different illumination conditions can be run.For example, with the grid-control during low-light level of active grid-control pattern Sequential (has grid-control illumination), 4T sequential (no illumination) during night during low-light and during daytime during 5T during high lighting level Sequence.Depicting the circuit theory diagrams of " can grid-control " pixel can also have on internal correlated-double-sampling (CDS) and/or close In the additional circuit of HDR (HDR).This adjunct circuit is added to reduce photosensitive fill factor, curve factor (i.e. pixel is sensitive Degree).
Fig. 2 shows the flow chart for the multiple grid-control low-noise pixel array sequential being imaged on active grid-control, wherein often Individual light source (for example originating from laser and/or the light source of the active grid-control imaging system triggering of LED and/or arc light or any other) The pulse of reflection is synchronized to each pixel gates event.Sequential (not to scale (NTS)) is illustrated by following steps, wherein each step It is rapid to represent a period of time and represent that signal is connected in a black unit.All steps will become more apparent that in flow charts：
Step A1：Pixel selection transistor (SEL) selects to provide the particular row array of the row from all arrays when connecting Select；And when the anti-blooming of pixel (TX2) connects (i.e. VSS voltage levels are less than VDD) so that in the undesirable of PD generations Parasitic signal is accumulated not in PD.
Step A2：Make it that the FD of pixel is disposed with electric charge completely when pixel-reset transistor (RST) is connection, and And the anti-blooming of pixel (TX2) is connected so that the unwanted parasitic signal produced in PD is accumulated not in PD.
Step A3：Before at least one single desired exposure (i.e. grid) accumulation, pixel reset signal is sampled, and is carried For pixel FD signal levels.Pixel reset signal is subtracted in being sampled in step A18 from picture element signal, to eliminate biasing Signal (therefore the outside CDS that completes is to the pixel configured in grid-control configuration as shown in Figure 1).When anti-blooming (TX2) is connected, So that the undesirable parasitic signal produced in PD is accumulated not in PD.
Step A4：Light source pulse (part for active grid-control imaging) is produced, and anti-blooming (TX2) is connected so that The unwanted parasitic signal produced in PD is accumulated not in PD.
Step A5：The light source part of imaging (effective grid-control) pulse propagation is to desired distance and is reflected back pixel, And anti-blooming (TX2) is when being transformed into closing so that the initial signal produced in PD is turned by transfer gate (TX1) Move.
Step A6：Pixels transfer transistor (TX1) is transformed into connection, and the electric signal produced in PD is transferred into FD, with Afterwards, when anti-blooming (TX2) goes back to connection, single grid failover events are terminated, and undesirable posting of to produce in PD Raw signal is accumulated not in PD.TX1 connects the cycle and expects pulse-echo signal equal or shorter than optical pulse time to accumulate, and subtracts Few background signal accumulation.
Step A7：Pixels transfer transistor (TX1) is closing and anti-blooming (TX2) connection so that produced in PD Undesirable parasitic signal accumulated not in PD.
Step A8：There can be different sequential similar to step A4, but relative to step A4.For example, step 4 duration For 1 μ sec (full width at half maximum (FWHM)), and the step A8 duration is 0.5 μ sec or the step A4 duration is 1 μ sec and step A8 is held The continuous time is 1.5 μ sec etc..
Step A9：There can be different sequential similar to step A5, but relative to step A5, be provided not in pixel FOV Same accumulation starting distance.For example, step A5 duration is 1 μ sec (propagates about 150m in free space equal to light Starting distance), and the step A9 duration be 0.5 μ sec (i.e. equal to light free-space propagation about 75m starting distance).
Step A10：There can be different sequential similar to step A6, but relative to step A6, to be accumulated in step A8 The light source pulse duration (is equal or shorter than optical pulse time).Time provide the different accumulation depth of field in pixel FOV away from From.For example, the step A6 duration be 1 μ sec (i.e. equal to light free-space propagation the about 150m depth of field), and step A10 be 0.6 μ sec (i.e. equal to light free-space propagation about 90m the depth of field).
Step A11：Similar to step A7, but there can be relative to step A7 different sequential.
Step A12- steps A15：Similar to step A4- steps A7 and step A8- step A11, but can have as described above Different sequential.Pixel gates (exposure and accumulate) can be read per sub-pixel to be carried out once, twice or #X grids (event).
Step A16：After at least one single grid failover events, anti-blooming (TX2) can connect so that in PD The undesirable parasitic signal produced is accumulated not in PD.
Step A17- steps A18：Read there is provided standard pixel.When anti-blooming (TX2) is switched on so that in PD The undesirable parasitic signal of middle generation is accumulated not in PD and FD, and pixel selection transistor (SEL) is switched on and accumulated Picture element signal is followed (SF) transistor to read from FD via source electrode.
In each active grid-control imaging for reading the array with multiple grid-control low-noise pixels, at least one list The step A5 duration of light pulse (i.e. single grid) and the gridistor (TX1) of step A6 duration and anti-blooming The sequential of transistor (TX2) can change from pixel to pixel or from pel array group to pel array group.This causes each Pixel or pel array group accumulate different depth of field distances and/or starting distance in pixel FOV.
According to some embodiments, grid-control unit is additionally configured to by independently controlling pixel at least two pixel groups Transfer gate transistor with different grid-control parameters simultaneously the pixel group of grid-control at least two.In addition, different grid-control parameters can Including the synchronization parameter on one or more light sources, to match the different scenes volume of different pixels group.Scene volume is determined Justice is volume fractiion in the scene, and scene is entered by border (such as different depth of field distances and/or starting distance in pixel FOV) Row is limited.
Fig. 3 shows the flow chart of multiple grid-control low-noise pixel array sequential of passive grid-control imaging, wherein pixel grid Pole sequential can by it is synchronous or it is asynchronous in external light source (be derived from laser and/or LED and/or arc lamp or be not belonging to grid-control into As the part of system, but any other triggering light source in grid-control imaging system FOV), such as traffic sign flasher. Compared with above-mentioned active grid-control imaging sequential, each grid (i.e. pixel exposure, its for TX1 and TX2 function) passive grid-control Being imaged sequential asynchronous can arrive light-pulse generator.Multiple grids (exposing) with different sequential are provided to be read on single pixel The sufficient light signal level of the background signal gone out.Sequential shows (not to scale (NTS)) by step, wherein each step is represented A period of time and signal turn in black unit represent.All steps will will become more apparent that in flow charts：
Step B1：Pixel selection transistor (SEL) is connected, and the selection of particular row array and picture are provided from all array row The anti-blooming (TX2) of element connects (the VSS voltage levels i.e. less than VDD) so that the undesirable parasitic letter produced in PD Accumulate number not in PD.
Step B2：Pixel-reset transistor (RST) is connected so that pixel FD is disposed and the anti-height of pixel completely with electric charge Light, which overflows (TX2), to be connected so that the undesirable parasitic signal produced in PD is accumulated not in PD.
Step B3：Pixel reset signal is sampled, accumulate at least one it is single it is desired exposure (i.e. grid) it Preceding offer pixel FD signal levels.Pixel reset signal can be subtracted from picture element signal sampling in step B18, to eliminate biasing letter Number (therefore outside pixel for completing CDS into gate modulation structure as shown in Figure 1).Anti- blooming (TX2) is connected so that in PD The undesirable parasitic signal of middle generation is accumulated not in PD.
Step B4：Generation light source (be not the part of grid-control imaging but in the grid-control imaging system FOV) pulse and resist Blooming (TX2) is connected so that the undesirable parasitic signal produced in PD is accumulated not in PD.
Step B5：Light source (be not the part of grid-control imaging but in the grid-control imaging system FOV) pulse propagation, and transmit To pixel and anti-blooming (TX2) closing so that the transfer gate (TX1) that begins through of the signal produced in PD is carried out Transfer.
Step B6：Pixels transfer transistor (TX1) is connected electric signal to the subsequent anti-blooms of FD produced to shift in PD and overflow Go out (TX2) and go back to connection, terminate single grid failover events, and cause the undesirable parasitic signal produced in PD not in PD Accumulation.The TX1 closure cycles should accumulate required pulse equal or shorter than the time of light pulse and send signal, and reduce background letter Number accumulation.
Step B7：Pixels transfer transistor (TX1), which disconnects, to be used and anti-blooming (TX2) connection so that produced in PD Raw undesirable parasitic signal is accumulated not in PD.
Step B8：There can be different sequential similar to step B4, but relative to step B4.For example, when step B4 continues Between be 1 μ sec (full width at half maximum (FWHM)), and the duration in step B8 is 0.5 μ sec or the step B4 duration walks for 1 μ sec The rapid B8 duration is 1.5 μ sec etc..
Step B9：There can be different sequential similar to step B5, but relative to step B5, be provided not in pixel FOV Same accumulated time.For example, step 5 duration is 1 μ sec, step B9 duration is 0.5 μ sec.
Step B10：There can be different sequential similar to step B6, but relative to step B6 with the accumulation light in step B8 The source pulse duration (time for being equal or shorter than light pulse).The light source pulse that time is provided in pixel FOV is different The accumulation of duration.For example, step B6 duration is 1 μ sec and step B10 is 0.6 μ sec.
Step B11：There can be different sequential similar to step B7, but relative to step 7.
Step B12- steps B15：Similar to step B4- steps B7 and step B8- step B11, but can have as described above Different sequential.Pixel gates (exposure and accumulate) can read per sub-pixel and carry out once, twice or #X grids (event).
Step B16：After at least one single grid failover events, anti-blooming (TX2) can connect so that in PD The undesirable parasitic signal produced is accumulated not in PD.
Step B17-B18 is walked：Read there is provided standard pixel.When anti-blooming (TX2) is connected so that produced in PD Raw undesirable parasitic signal is accumulated not in PD, the picture element signal quilt that pixel selection transistor (SEL) is connected and accumulated (SF) transistor is followed to read from FD via source electrode.
Fig. 3 also show the flow chart of multiple grid-control low-noise pixel array sequential of passive grid-control imaging, wherein pixel Grid timing can accumulation external light source (be derived from laser and/or LED and/or arc lamp or the portion for being not belonging to grid-control imaging system Divide but any other continuous light source in grid-control imaging system FOV) signal, for example shine upon.At least single grid (exposes Light) the sufficient signal level during single pixel is read can be provided.Sequential shows (not to scale (NTS)) by step, wherein each step Represent a period of time and signal is turned in black unit and represented.
A key feature in key feature in multiple grid-control low-noise pixels is opaque during grid disconnects. The parasitic electric signal produced when pixel gates disconnect (i.e. TX1 is in gap and TX2 at connection) in FD is by sheltering FD (for example, by metal level in dot structure) and/or reduced by using pixel lenticule, to guide light away from FD. Grid disconnect level during opacity need it is low as far as possible, wherein in response to be integrated the time light intensity divided by FD in receive The signal (grid-control/non-grid-control and readout time) of collection should reach 0.01%.The value needs to handle in active imaging explained hereinafter Back-scattered light strong reflection.
The control parameter of active imaging performance be modulation contrast, we in equation (1) be defined as " contrast ", it is contemplated that Airlight, it is on the light that this point is the FOV from the system that is dispersed into and surrounding's light source of backscattering, and which are added mesh Mark and background.
Wherein
IAirTo facilitate the airlight irradiated to focal plane.For night vision, have it is very weak or without airlight and IAir≈0.This result can be obtained using narrow-band pass filter (i.e. spectral filter).For boisterous image-forming condition (example Such as dust or mist), airlight must just be taken into account.It shown below is and be used for for the artificial source near imaging sensor The short-cut method of influence of the prediction air backscattering to picture quality when irradiating distant place scene.It is assumed that irradiator and imaging Interval between system is small compared with the scope of the particle irradiated recently into FOV.Then, the spoke of the air in FOV Penetrate rate by the contribution of the backscattering to all irradiation particles on the path between sensor and scene summed come Calculate.The result is that：
Wherein,
IBackscatteringThe radiance [power/area] of=air backscattering
RIt is minimum=in FOV from imaging system (and from irradiator) to the scope [length] of nearest irradiation particle
RIt is maximum=from imaging system (and from irradiator) to the scene of imaging scope [length]
The radiation intensity [power] of P=irradiators
Backscatter gains [dimensionless] of the G=relative to the atmospheric particles of isotropic scatterning
γ=atmosphere attenuation coefficien or " extinction coefficient " [length-1]
F#lThe F numbers [dimensionless] of=irradiator optics
θl=irradiator luminous exitance [angle]
X=integration variables
In the case that irradiator in narrow wavelength and the sight line path by air are taken as level, atmosphere attenuation coefficien is thought It is constant.
Fig. 4 and Fig. 5 show another key feature in multiple grid-control low-noise pixels：Transfer gate transistor (TX1) noise (i.e. transfer efficiency).Fig. 4 provides the formula used in simulations and unit, and Fig. 5 shows the knot of emulation Really.In active grid-control imaging, the safety standard of eyes and skin can limiting light source (such as laser, LED etc.) light its peak work Rate, light average light power etc..Gridistor (TX1) noise (i.e. transfer efficiency) can be important ginseng in this case Number.Gridistor (TX1) noise (i.e. transfer efficiency) is the result of the physical process of the level of uncertainty of electric charge transfer.Extremely Rare three kinds of different methods can be realized within the pixel shifts (TX1) efficiency to provide higher grid：
● set the high-potential voltage between PD to FD to form highfield so that electric charge carrier (i.e. at least single electricity Son) there is higher probability to be " pulled " FD.
● the physical size of transfer gate, mainly on TX1PD sides.Transfer gate (TX1) is bigger, and the grid to FD turns Shifting efficiency is bigger, and vice versa.
● the physical arrangement of transfer gate, mainly on TX1PD sides.Transfer gate (TX1), which gets over " zero defect ", (not to be had " hole "), the grid transfer efficiency to FD is bigger, and vice versa.
The following examples are by pixels illustrated signal, pixel noise level (only because grid transfer) and pixel SNR Influence.Calculate the example (Fig. 5, curve map #1) of signal level and noise level：
● the single light pulse accumulating signal (i.e. single grid transfer) in FD is used as the function of target range.
● single light pulse accumulating signal (i.e. single grid transfer) in FD noise level is as target range and waits In the noise transitional function of an electronics.
● the noise level (merely due to grid transfer) of single light pulse accumulating signal (i.e. single grid transfer) is made in FD For target range and equivalent to the noise transitional function of 10 electronics.
Calculate pixel SNR (Fig. 5, curve map #2) example：
● SNR is used as single light pulse accumulating signal (i.e. single grid is shifted), the noise transfer equal to Single Electron and mesh The function of subject distance.
● with 100 light pulses (i.e. 100 grid transfers) etc..
● SNR is shifted and mesh as single light pulse accumulating signal (i.e. single grid is shifted), the noise equal to ten electronics The function of subject distance.
● with 100 light pulses (i.e. 100 grid transfers) etc..
In active grid-control imaging, transfer gate transistor (TX1), anti-blooming transistor (TX2) and light source pulse Rise time and fall time directly with depth of field range resolution ratio/precision and starting range resolution ratio/precision it is relevant.
In passive grid-control imaging, transfer gate transistor (TX1), anti-blooming transistor (TX2) and light source pulse The rise time and fall time of (not being the part of grid-control imaging system, but in the grid-control imaging system FOV) are directly and arteries and veins The signal accumulation of modulated is relevant.
Multiple grid-control pixels can have epitaxial layer and/or high resistivity layer more than 12 μ m-thicks as parent material, be used for The PD spectral responses (i.e. directly relevant with pixel fill factor and quantum efficiency) of higher near infrared ray are provided to more than 50% Value pixel chip.Because epitaxial layer is thicker, so spectral response is larger, but the pixel modulation transfer function (MTF) compared with It is low.Active grid-control imaging for being mainly used in night vision application, due to MTF caused by thick epitaxial layer and/or high resistivity layer Reduction is with being second order relation (due to big pixel chi due to being preferably greater than spectral response caused by 5 μm * 5 μm of big Pixel Dimensions It is very little).Big pixel needs to accumulate more reflected light signals (i.e. bigger elemental area), without low luminosity (such as less than Resolution ratio during 0.1lux).
Preferably, multiple grid-control pixels and multiple grid-control sensors are produced using the CMOS technology of vehicle environment is met (i.e. with the pel array for reading interface)；Due to solar radiation, so high-temperature storage and operation (being higher than 50 degrees Celsius), sensitive Degree will not be damaged, because constant still image projects to grid-control pixel, so the effect do not burnt.
Preferably, in active imaging (being coupled to light source) or passive imaging, (i.e. passive meaning refers to being not belonging to grid A part (such as LED, artificial light source etc.) for control system but the light source in grid-control imaging system FOV) in, in multiple grid-control pictures Plain and/or multiple grid-control sensors (i.e. with the pel array for reading interface) are previously incorporated spectral filter, to reduce ring Accumulation of the border light in daytime, night and other ambient light conditions.Spectral filter device can be used as in pel array level to be inlayed Filter array (for example, arranging spectral filter on the square grid of optical sensor) is realized.Filter mode can also be： 25% green, 25% is red, 25% blueness and 25% near-infrared (NIR), therefore, also referred to as RGBN.The Filter is also Can be：50% transparent (wavelength for for example opening a wide spectrum), 25% red and 25%NIR, therefore also referred to as CCRN. The Filter can also be：25% is transparent, 25% a specific wavelength NIR and 25% in different specific wavelengths NIR, therefore also referred to as CRN (1) N (2) (such as C：450-850nm, R：650nm, N (1)：780-800nm and N (2)： 810-850nm).The Filter can also be other green, red, blue, transparent and NIR any combinations.
Preferably, in active imaging (being coupled to polarized light source) or passive imaging, (i.e. passive meaning refers to not belonging to In the part (such as LED, artificial light source etc.) but the light source in the grid-control imaging system FOV of grid-control system) in it is multiple Grid-control pixel and/or multiple grid-control sensors (i.e. with the pel array for reading interface) are previously incorporated polarization filter, with Reduce accumulation of the ambient light on daytime, night and other ambient lighting conditions.
The ability of direct TOF imagings is carried out with the synchronous light source for being reflected back into multiple grid-control pixel FOV, can also pass through one A little methods (for example perform step A1-A7 rather than perform step A8, perform a series of step A6-A7 several times) are realized, every There is short delay Δ T between individual sequence.The different piece of each Δ T delay accumulation Δ Z=Δs T*C/2 depth of field, wherein, C It is the speed of light.The delay of such as Δ T=100nsec between step A6-A7 sequence should will provide 15m's for each sequence The depth of field.
Although describing the present invention relative to a limited number of embodiment, these should not be construed as to the scope of the invention Limitation, but as the presently preferred embodiments in some preferred embodiments illustration.Other possible changes, modification and application Within the scope of the present invention.Therefore, the scope of the present invention should not necessarily be limited by the content having been described above so far, and should be according to institute Attached claim and their legal equivalents are determined.

Claims (17)

1. it is a kind of be used to providing daytime scene and night scenes improved image system, the system includes：
Pixel sensor array, the pel array sensor has in single pixel level shelters grid rupture capacity, wherein described Pixel sensor array is provided with intrinsic anti-blooming ability in single pixel level, wherein, by having high transfer accordingly The transfer gate transistor of grid efficiency carries out grid-control to each pixel；With
Grid-control unit, the grid-control unit is configured as controlling the transfer gate transistor of the pixel sensor array, To accumulate a series of multiexposure, multiple exposures based on specified exposure parameter in each single reading of pixel,
Wherein described pixel sensor array is additionally configured to be operated with least one pattern except grid-control pattern.
2. system according to claim 1, wherein the pixel sensor array is attached to mobile platform.
3. system according to claim 1, wherein the grid-control unit is configured as being operated with flow image velocimetry.
4. system according to claim 1, wherein the grid-control unit is configured as being operated with asynchronous light source.
5. system according to claim 1, wherein the grid-control unit is additionally configured to by independent control at least two The transfer gate transistor of pixel at pixel group, with different grid-control parameters come at least two pixel groups described in grid-control simultaneously.
6. system according to claim 5, wherein the different grid-control parameters are included on the same of one or more light sources Parameter is walked, to match different scene volumes for different pixel groups.
7. system according to claim 5, wherein performing the different grid-control to each pixel group in different pixels group Parameter, so as to perform the independent accumulation to signal.
8. system according to claim 1, wherein single pixel level the intrinsic anti-blooming ability in institute State and at least 60dB ratio is shown as between the saturated pixel of pixel sensor array and the second adjacent pixel.
9. system according to claim 1, is included in the photodiode of each pixel, wherein the low noise in the pixel Sound is accomplished without light source pulse or modulation of source by resetting its potential voltage during a cycle, therefore reduces in institute State the parasitic noise in photodiode.
10. system according to claim 1, wherein, by setting the pixel to the floating of the transfer gate transistor The high-potential voltage between diffused diode is moved to realize the high transfer gate efficiency, it is therefore, it is possible to form highfield, i.e., electric Charge carrier has high probability to be drawn into the floating diffusion diode.
11. system according to claim 1, is included in the photodiode of each pixel, wherein by setting described turn The physical size for moving gridistor realizes the high transfer gate efficiency so that turn described at the photodiode Gridistor is moved more than the transfer gate transistor in the floating diffusion diode side of transfer gate.
12. system according to claim 1, is included in the photodiode of each pixel, wherein by by the photoelectricity The transfer gate transistor at diode is set to no hole to realize the high transfer gate efficiency.
13. system according to claim 1, is covered from 400nm to 1100nm wherein the pixel is configured as detection In the range of light.
14. system according to claim 1, wherein the pixel is configured as scope of the detection covering from 700nm to 2 μm Interior light.
15. system according to claim 1, wherein the pixel sensor array is configured as being grasped with reference to colour filter Make.
16. system according to claim 1, the active light source pulse or active light source for being included in 800nm near-infrared is adjusted System.
17. system according to claim 1, wherein, the pixel sensor array it is sensitive enough to detect from 20m and The distance between 200m reflection, wherein described be reflected in before the arrival pixel sensor array with least two orders of magnitude Decay.
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