CN104393011A - Flexible resistive random access memory, cell structure and preparation method thereof - Google Patents
Flexible resistive random access memory, cell structure and preparation method thereof Download PDFInfo
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Abstract
The invention provides a flexible resistive random access memory, a cell structure and a preparation method thereof. The cell structure of the flexible resistive random access memory comprises a flexible substrate, a field effect transistor, and an organic resistive random access memory cell; the field effect transistor is arranged on the flexible substrate and is based on a semiconductive single-walled carbon nanotube; the grid electrode of the field effect transistor is used for connecting with a memory word line signal, and the source electrode of the field effect transistor is used for connecting with a ground signal; the organic resistive random access memory cell is covered on the drain electrode of the field effect transistor, one end of the organic resistive random access memory cell is connected with the drain electrode of the field effect transistor, and the other end thereof is used for connecting with a memory bit line signal. The unique electrical properties and excellent material characteristics of the single-walled carbon nanotube are adequately utilized by employing the semiconductive single-walled carbon nanotube based on the flexible substrate, and the signal read and write of the flexible organic resistive random access memory cell can be achieved thereby; the flexible carbon nanotube transistor can be further used for structuring a decoding circuit of a memory array, thereby really achieving the flexible organic resistive random access memory with an ultrahigh density.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to a kind of cellular construction of flexible resistance-variable storing device, and there is the flexible resistance-variable storing device of this cellular construction, and prepare the method for cellular construction of this flexible resistance-variable storing device.
Background technology
Internet of Things is a complex art of rising in recent years, and its core technology relates to the many aspects such as intelligent sensing, data storage and signal transacting.Flexible wearable electronic system, as the basic element of Internet of Things, obtains in recent years and develops rapidly, and the research for aspects such as flexible transistor, transducer, memories also becomes hot subject gradually.
Organic resistive random access memory (RRAM) based on organic material structure is an important directions in the research of current flexible memory, the low cost of organic material, easily processing, the advantage such as collapsible and characteristic make it have boundless application prospect, had numerous result of study to report the performance of the flexible memory based on all kinds organic material at present, mainly include machine Small molecular, polymer, alms giver/by principal mode organic double compound and doping inorganic nanoparticles organic compound etc.But all these results of study all just illustrate the performance of the basic cell structure of flexible memory, and any memory will obtain the storage array that real practical application all must realize super-high density, and the decoding circuit corresponded and unit read/write circuit.For RRAM memory cell, field-effect transistor is the ideal element of construction unit read/write circuit and decoding circuit, therefore the flexible RRAM memory cell based on organic material must have high performance flexible transistor could build Mass storage array, thus really realizes the application of product-level flexible memory.Although at present based on the comparatively maturation that the thin-film transistor of organic material has developed in the application study of flexible transistor, but the low mobility characteristics of organic material significantly limit the device performance of flexible thin-film transistor, make it the performance be difficult to RRAM memory cell to match, therefore, the flexible transistor exploring Performance Match remains one of research direction realizing the extensive use of flexible RRAM memory.
Summary of the invention
In order to overcome above problem, the present invention is intended to the flexible resistance-variable storing device proposing a kind of flexible random access memory unit structure and preparation method thereof and have this cellular construction, this structure utilizes flexible carbon nano tube transistor to build the cellular construction of basic array in conjunction with flexible variable-resistance memory unit, and it can match with existing flexible resistance-variable storing device.
To achieve these goals, the invention provides a kind of cellular construction of flexible resistance-variable storing device, it comprises:
Flexible substrate;
The field-effect transistor of based semiconductor Single Walled Carbon Nanotube, it is positioned in described flexible substrate; The grid of described field-effect transistor is used for being connected with storage word-line signal, and the source electrode of described field-effect transistor is used for being connected with ground signalling;
Based on the organic resistive random access memory cell of organic material, it is covered in the drain electrode of described field-effect transistor, and its one end is connected with the drain electrode of described field-effect transistor, and the other end is used for being connected with storage bit line signal.
Preferably, flexible substrate material used comprises polyimides, PEN, dimethyl silicone polymer, Parylene.
Preferably, described field-effect transistor comprises the field-effect transistor adopting carbon nano-tube film, single-root carbon nano-tube or carbon nano-tube parallel array to prepare.
Preferably, described field-effect transistor comprises employing top gate structure and back grid structure.
Preferably, the organic material that described organic resistive random access memory cell adopts comprises: organic molecule, polymer, alms giver/and by the organic compound of principal mode organic double compound or doping inorganic nanoparticles.
Present invention also offers a kind of flexible resistance-variable storing device, it comprises flexible resistance-variable storing device array, and described flexible resistance-variable storing device array has above-mentioned cellular construction.
Present invention also offers a kind of preparation method of cellular construction of above-mentioned flexible resistance-variable storing device, it comprises:
Step 01: the field-effect transistor preparing semi-conductive single-walled carbon nanotubes on flexible substrates, comprises and prepares source electrode, drain and gate;
Step 02: the described organic resistive random access memory cell based on organic material of preparation in the drain electrode of described field-effect transistor;
Step 03: drawn one end of described organic resistive random access memory cell, for being connected with storage bit line signal; The grid of described field-effect transistor is drawn, for being connected with storage word-line signal; The source electrode of described field-effect transistor is drawn, for being connected with ground signalling.
Preferably, in described step 01, the preparation of described field-effect transistor comprises: prepare backgate and deposition gate medium on flexible substrates, then on gate medium, form Single Walled Carbon Nanotube, described Single Walled Carbon Nanotube is prepared source electrode and drain electrode; Or,
The preparation of described field-effect transistor comprises: form Single Walled Carbon Nanotube on flexible substrates, and described Single Walled Carbon Nanotube is prepared source electrode, drain electrode, then deposits gate medium and preparation top grid.
Preferably, in described step 02, the preparation of described organic resistive random access memory cell comprises: on described field-effect transistor, deposit organic resistive random access material layer, thus forms described organic resistive random access memory cell;
Described step 03 specifically comprises: first, through photoetching and etching technics, correspond to described field-effect transistor source electrode on described organic resistive random access material layer in and correspond to described field-effect transistor grid on described gate medium in and etch through hole in described organic resistive random access material layer; Then, in described through hole, metal material is filled; Finally, described through hole and correspond to described field-effect transistor drain electrode above described organic resistive random access memory cell deposited atop contact block, thus complete the extraction of the source electrode of described field-effect transistor, grid and described organic resistive random access memory cell.
Preferably, in described step 02, the preparation of described organic resistive random access memory cell comprises: on described field-effect transistor, deposit organic resistive random access material layer; Then by photoetching and etching technics, retain the described organic resistive random access material layer above the drain electrode being positioned at described field-effect transistor, thus form described organic resistive random access memory cell;
Described step 03 specifically comprises:
Step 031, the described field-effect transistor disposed thereon one deck dielectric layer beyond described organic resistive random access memory cell;
Step 032, through photoetching and etching technics, etches through hole in the dielectric layer above the source electrode corresponding to described field-effect transistor and corresponding in the gate medium neutralization medium layer above the grid of described field-effect transistor;
Step 033, fills metal material in described through hole;
Step 034, at described through hole and described organic resistive random access memory cell deposited atop contact block, thus completes the extraction of the source electrode of described field-effect transistor, grid and described organic resistive random access memory cell.
The cellular construction of flexible resistance-variable storing device proposed by the invention, have employed semi-conductive single-walled carbon nanotubes transistor based on flexible substrate as flexible transistor, this structure takes full advantage of the electrology characteristic of Single Walled Carbon Nanotube uniqueness and excellent material behavior.The Single Walled Carbon Nanotube of semiconductive has very high carrier mobility, ballistic transport characteristic can be shown in scene effect transistor, it is the ideal material preparing high performance field-effect transistor, simultaneously, it also shows good mechanical flexibility and ductility and optical transparence in material behavior, therefore, Single Walled Carbon Nanotube transistor is a kind of ideal high performance flexible transistor, can be used for the signal read-write realizing flexible organic resistive random access memory cell, and flexible carbon nano tube transistor can be utilized further to build the decoding circuit of storage array, thus really realize the flexible organic resistive random access memory of super-high density.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the flexible random access memory unit structure of a preferred embodiment of the present invention
Fig. 2 is the perspective view of the flexible random access memory unit structure of a preferred embodiment of the present invention
Fig. 3 is the cross section structure schematic diagram of the flexible random access memory unit structure of a preferred embodiment of the present invention
Fig. 4 is the schematic flow sheet of the preparation method of the flexible random access memory unit structure of a preferred embodiment of the present invention
The schematic diagram based on the 4x4 storage array constructed by 1T-1R type array element that Fig. 5 is a preferred embodiment of the present invention
The schematic diagram based on 4 bit address decoding circuits constructed by carbon nanotube field-effect transistor that Fig. 6 is a preferred embodiment of the present invention
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
The invention provides a kind of cellular construction of flexible resistance-variable storing device, it comprises: flexible substrate; Be positioned at the field-effect transistor of the based semiconductor Single Walled Carbon Nanotube in flexible substrate; The organic resistive random access memory cell based on organic material that one end is connected with the drain electrode of field-effect transistor; Wherein, the grid of field-effect transistor is used for being connected with storage word-line signal, and the source electrode of field-effect transistor is used for being connected with ground signalling, and the other end of organic resistive random access memory cell is used for being connected with storage bit line signal.
Below with reference to accompanying drawing 1-3 and specific embodiment, the cellular construction to flexible resistance-variable storing device of the present invention is described in further detail.Wherein, Fig. 1 is the circuit diagram of the 1T-1R type flexible RRAM array element structure of a preferred embodiment of the present invention, Fig. 2 is the perspective view of the 1T-1R type flexible RRAM array element structure of a preferred embodiment of the present invention, and Fig. 3 is the cross section structure schematic diagram of the 1T-1R type flexible RRAM array element structure of a preferred embodiment of the present invention.It should be noted that, accompanying drawing all adopt simplify very much form, use non-ratio accurately, and only in order to object that is convenient, that clearly reach aid illustration the present embodiment.
In the present embodiment, the cellular construction of flexible resistance-variable storing device, refers to Fig. 2-Fig. 3, comprising:
Flexible substrate 1; Here, flexible substrate material comprises polyimides, PEN, dimethyl silicone polymer, Parylene etc.As shown in Figure 3, adopt polyimide material in flexible substrate 1, flexible substrate 1 has backgate 2.
The field-effect transistor of based semiconductor Single Walled Carbon Nanotube 4, adopt back grid structure, it is positioned in flexible substrate 1; The grid 2 of field-effect transistor is for being connected with storage word-line signal, and the source electrode 6 of field-effect transistor is for being connected with ground signalling; Field-effect transistor comprises the field-effect transistor adopting carbon nano-tube film, single-root carbon nano-tube or carbon nano-tube parallel array to prepare; As shown in Figure 2, in the present embodiment, carbon nano-tube 4 parallel array is positioned in backgate 2, between backgate 2 surface and carbon nano-tube 4, be coated with gate dielectric layer 3, and gate dielectric layer 3 drains 5 for isolating backgate 2 with carbon nano-tube 4, source electrode 6/, avoids its contact to leak electricity; Source electrode 6 and drain electrode 5 lay respectively at the two ends of carbon nano-tube 4 parallel array; Certainly, in other embodiments, the field-effect transistor of based semiconductor Single Walled Carbon Nanotube also can adopt top gate structure, and top gate structure can adopt existing structure, and the present invention repeats no more this.It should be noted that, for the ease of expressing in Fig. 2, not demonstrating gate dielectric layer 3, but this is not used in and limits the scope of the invention.
Based on the organic resistive random access memory cell 7 of organic material, its one end is connected with the drain electrode 5 of field-effect transistor, and the other end is used for being connected with storage bit line signal.The organic material that organic resistive random access memory cell 7 adopts can comprise: organic molecule, polymer, alms giver/and by the organic compound etc. of principal mode organic double compound or doping inorganic nanoparticles.In the present embodiment, organic resistive random access memory cell 7 is covered on whole field-effect transistor, and it adopts Parylene material, as shown in Figure 3.In other embodiments of the invention, organic resistive random access memory cell also can only be covered in above the drain electrode of field-effect transistor.
The cellular construction of above-mentioned flexible resistance-variable storing device, is called 1T-1R type structure in the present invention.
It should be noted that, it will be appreciated by those skilled in the art that, can apply to make the cellular construction of formed flexible resistance-variable storing device, when the source electrode of scene effect transistor, grid are drawn, need to form dielectric layer between extracting electrode layer and source electrode, grid, and utilize through hole source electrode, grid to be connected with extracting electrode layer.In the present embodiment, as shown in Figures 2 and 3, organic resistive random access memory cell 7 covers on whole field-effect transistor, Direct precipitation one contact block 9 above it, utilizes the through hole 8 being filled with metal to be drawn by source electrode 6, and be connected with contact block 10 above source electrode 6; Above grid 2, utilize the through hole 8 being filled with metal to be drawn by grid 2, and be connected with contact block 11.Here, contact block 9,10 and 11 is positioned at extracting electrode layer.In order to show through hole 8 in Fig. 2, the part that organic resistive random access memory cell 7 corresponds to above drain electrode 5 retained, all the other organic resistive random access memory cell 7 parts do not show.
The grid of the unit of the organic resistive random access memory of above-mentioned 1T-1R type structure, source electrode are connected with bit line signal with word-line signal, ground signalling respectively with organic resistive random access memory cell, namely define the circuit of 1T-1R type structure as shown in Figure 1.
Below in conjunction with accompanying drawing 4, the preparation method of the cellular construction of above-mentioned flexible resistance-variable storing device of the present invention is elaborated.
Refer to Fig. 4, the preparation method of the cellular construction of the flexible resistance-variable storing device of a preferred embodiment of the present invention comprises:
Step 01: the field-effect transistor preparing semi-conductive single-walled carbon nanotubes on flexible substrates, comprises and prepares source electrode, drain and gate;
Step 02: the organic resistive random access memory cell based on organic material prepared by the drain electrode of scene effect transistor;
Step 03: drawn one end of organic resistive random access memory cell, for being connected with storage bit line signal; The grid of field-effect transistor is drawn, for being connected with storage word-line signal; The source electrode of field-effect transistor is drawn, for being connected with ground signalling.
In a preferred embodiment of the present invention, the field-effect transistor of based semiconductor Single Walled Carbon Nanotube is back grid structure, and its preparation method comprises: form backgate, gate dielectric layer, carbon nano-tube and source/drain successively on flexible substrates.Here, carbon nano-tube can be prepared on other substrate, then transfers in flexible substrate.This is that those skilled in the art can know, and here repeats no more the preparation of carbon nano-tube and transfer.Certainly, existing any method can preparing the carbon nanotube field-effect transistor of back grid structure all can be applied to the present invention.
In another preferred embodiment of the present invention, the field-effect transistor of based semiconductor Single Walled Carbon Nanotube is top gate structure, and its preparation method comprises: form carbon nano-tube, source electrode, drain electrode, gate dielectric layer and top grid on flexible substrates successively.Here, existing any method can preparing the carbon nanotube field-effect transistor of top gate structure all can be applied to the present invention.
In one embodiment of the invention, the preparation of organic resistive random access memory cell is included on field-effect transistor and deposits organic resistive random access material layer, thus forming organic variable-resistance memory unit, the method for deposition organic resistive random access material layer can be, but not limited to adopt organic C VD method; Then, the extraction of source electrode, grid and organic resistive random access memory cell, can comprise:
First, through photoetching and etching technics, correspond to field-effect transistor source electrode on organic resistive random access material layer in and correspond to field-effect transistor grid on gate medium in and etch through hole in organic resistive random access material layer;
Then, metal material is filled in through-holes;
Finally, through hole and correspond to field-effect transistor drain electrode above organic resistive random access memory cell deposited atop contact block, thus complete the extraction of the source electrode of field-effect transistor, grid and organic resistive random access memory cell.
In another embodiment of the present invention, the preparation of variable-resistance memory unit comprises:
First, scene effect transistor deposits organic resistive random access material layer; The method of deposition organic resistive random access material layer can be, but not limited to adopt organic C VD method, and this is that those skilled in the art can know, and the present invention repeats no more this;
Then, by photoetching and etching technics, retain the organic resistive random access material layer above the drain electrode being positioned at field-effect transistor, thus form organic variable-resistance memory unit, such as, first form the figure of variable-resistance memory unit in the photoresist through photoetching, and then photoresist is that mask etching organic resistive random access material layer obtains organic resistive random access memory cell according to this.Concrete etch process parameters can require to set according to actual process.
After preparing organic resistive random access memory cell, carry out the extraction of one end of source electrode, grid and organic resistive random access memory cell, thus make it correspondence be connected in each signal source.Draw mode can adopt: first metallization medium layer, etch through hole and fill metal, then on through hole, form contact block.Its concrete steps are as follows:
Step 031, the field-effect transistor disposed thereon one deck dielectric layer beyond organic resistive random access memory cell;
Step 032, through photoetching and etching technics, etches through hole in the gate medium neutralization medium layer in the dielectric layer above the source electrode of scene effect transistor and above the grid of field-effect transistor;
Step 033, fills metal material in through-holes;
Step 034, at through hole and organic resistive random access memory cell deposited atop contact block, thus completes the extraction of the source electrode of field-effect transistor, grid and organic resistive random access memory cell.
Present invention also offers a kind of flexible resistance-variable storing device, it comprises the array by above-mentioned multiple flexible resistance transformation memory unit; As shown in Figure 5, be the schematic diagram based on the 4x4 storage array constructed by 1T-1R type array element of a preferred embodiment of the present invention; It comprises the unit of the organic resistive random access memory of 16 1T-1R types and corresponding word line decode circuit W and bit line decode circuit B, wherein, word line decode circuit W and bit line decode circuit B can be formed by flexible carbon nano tube transistor, and then then can realize the cell array of large-scale flexible resistance-variable storing device.
Fig. 6 shows the schematic diagram based on the word line decode circuit of 4 constructed by carbon nanotube field-effect transistor of a preferred embodiment of the present invention, it is actually 2 input 4 bit address decoders based on PMOS transmission gate logic, why selecting PMOS transmission gate to build address decoder, is because carbon nanometer transistor prepared in atmospheric environment is usually expressed as stable PMOS characteristic.In the word line decode circuit shown in Fig. 6, A0 and A1 is signal input part, and the inverted signal input of its correspondence is respectively
with
wL0, WL1, WL2, WL3 are then 4 wordline outputs, VDD and GND is then respectively high level and the low level input of decoding circuit, and EN is then the enable control input end of decoding circuit, for controlling the operating state of decoding circuit.The simple operation principle of this circuit is as follows: when EN control end is low level, decoding circuit is in normal operating conditions, now as A0=0 and A1=0 time, WL0 signal gating, by that analogy, as A0=1 and A1=0 time, WL1 signal gating, as A0=0 and A1=1 time, WL2 signal gating, as A0=1 and A1=1 time, WL3 signal gating.Same, utilize constructed by carbon nanometer transistor 4 bit line decode circuit also can have identical circuit structure with word line decode circuit listed in Fig. 6, only four wordline outputs WL0, WL1, WL2, WL3 need be replaced by four bit line decode outputs BL0, BL1, BL2, BL3 accordingly.Thus, the read-write operation of each the flexible random access memory unit in above-mentioned Fig. 6 is realized by the signal gating state of four bit line decode outputs in four wordline outputs of word line decoding and bit line decode circuit.
In sum, the cellular construction of flexible resistance-variable storing device of the present invention, have employed semi-conductive single-walled carbon nanotubes transistor based on flexible substrate as flexible transistor, this structure takes full advantage of the electrology characteristic of Single Walled Carbon Nanotube uniqueness and excellent material behavior.The Single Walled Carbon Nanotube of semiconductive has very high carrier mobility, ballistic transport characteristic can be shown in scene effect transistor, it is the ideal material preparing high performance field-effect transistor, simultaneously, it also shows good mechanical flexibility and ductility and optical transparence in material behavior, therefore, Single Walled Carbon Nanotube transistor is a kind of ideal high performance flexible transistor, can be used for the signal read-write realizing flexible organic resistive random access memory cell, and flexible carbon nano tube transistor can be utilized further to build the decoding circuit of storage array, thus really realize the flexible organic resistive random access memory of super-high density.
Although the present invention discloses as above with preferred embodiment; right described embodiment is citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. a cellular construction for flexible resistance-variable storing device, is characterized in that, comprising:
Flexible substrate;
The field-effect transistor of based semiconductor Single Walled Carbon Nanotube, it is positioned in described flexible substrate; The grid of described field-effect transistor is used for being connected with storage word-line signal, and the source electrode of described field-effect transistor is used for being connected with ground signalling;
Based on the organic resistive random access memory cell of organic material, it is covered in the drain electrode of described field-effect transistor, and its one end is connected with the drain electrode of described field-effect transistor, and the other end is used for being connected with storage bit line signal.
2. the cellular construction of flexible resistance-variable storing device according to claim 1, is characterized in that, flexible substrate material used comprises polyimides, PEN, dimethyl silicone polymer, Parylene.
3. the cellular construction of flexible resistance-variable storing device according to claim 1, is characterized in that, described field-effect transistor comprises the field-effect transistor adopting carbon nano-tube film, single-root carbon nano-tube or carbon nano-tube parallel array to prepare.
4. the cellular construction of flexible resistance-variable storing device according to claim 3, is characterized in that, described field-effect transistor comprises employing top gate structure or back grid structure.
5. the cellular construction of flexible resistance-variable storing device according to claim 1, it is characterized in that, the organic material that described organic resistive random access memory cell adopts comprises: organic molecule, polymer, alms giver/and by the organic compound of principal mode organic double compound or doping inorganic nanoparticles.
6. a flexible resistance-variable storing device, is characterized in that, it comprises flexible random access memory unit array, and described flexible random access memory unit array has cellular construction according to claim 1.
7. a preparation method for the cellular construction of flexible resistance-variable storing device according to claim 1, is characterized in that, comprising:
Step 01: the field-effect transistor preparing semi-conductive single-walled carbon nanotubes on flexible substrates, comprises and prepares source electrode, drain and gate;
Step 02: the described organic resistive random access memory cell based on organic material of preparation in the drain electrode of described field-effect transistor;
Step 03: drawn one end of described organic resistive random access memory cell, for being connected with storage bit line signal; The grid of described field-effect transistor is drawn, for being connected with storage word-line signal; The source electrode of described field-effect transistor is drawn, for being connected with ground signalling.
8. preparation method according to claim 7, it is characterized in that, in described step 01, the preparation of described field-effect transistor comprises: prepare backgate and deposition gate medium on flexible substrates, then on gate medium, form Single Walled Carbon Nanotube, described Single Walled Carbon Nanotube is prepared source electrode and drain electrode; Or,
The preparation of described field-effect transistor comprises: form Single Walled Carbon Nanotube on flexible substrates, and described Single Walled Carbon Nanotube is prepared source electrode, drain electrode, then deposits gate medium and preparation top grid.
9. preparation method according to claim 8, is characterized in that, in described step 02, the preparation of described organic resistive random access memory cell comprises: on described field-effect transistor, deposit organic resistive random access material layer, thus forms described organic resistive random access memory cell;
Described step 03 specifically comprises: first, through photoetching and etching technics, correspond to described field-effect transistor source electrode on described organic resistive random access material layer in and correspond to described field-effect transistor grid on described gate medium in and etch through hole in described organic resistive random access material layer; Then, in described through hole, metal material is filled; Finally, described through hole and correspond to described field-effect transistor drain electrode above described organic resistive random access memory cell deposited atop contact block, thus complete the extraction of the source electrode of described field-effect transistor, grid and described organic resistive random access memory cell.
10. preparation method according to claim 8, is characterized in that, in described step 02, the preparation of described variable-resistance memory unit comprises: on described field-effect transistor, deposit organic resistive random access material layer; Then by photoetching and etching technics, retain the described organic resistive random access material layer above the drain electrode being positioned at described field-effect transistor, thus form described organic resistive random access memory cell;
Described step 03 specifically comprises:
Step 031, the described field-effect transistor disposed thereon one deck dielectric layer beyond described organic resistive random access memory cell;
Step 032, through photoetching and etching technics, etches through hole in the dielectric layer above the source electrode corresponding to described field-effect transistor and corresponding in the gate medium neutralization medium layer above the grid of described field-effect transistor;
Step 033, fills metal material in described through hole;
Step 034, at described through hole and described organic resistive random access memory cell deposited atop contact block, thus completes the extraction of the source electrode of described field-effect transistor, grid and described organic resistive random access memory cell.
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| CN1866570A (en) * | 2005-04-28 | 2006-11-22 | 株式会社半导体能源研究所 | Memory device and semiconductor device |
| CN101013597A (en) * | 2007-01-25 | 2007-08-08 | 林殷茵 | Resistance random access memory and methods of storage operating same |
| CN103403904A (en) * | 2011-03-24 | 2013-11-20 | 株式会社东芝 | Organic molecular memory and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1866570A (en) * | 2005-04-28 | 2006-11-22 | 株式会社半导体能源研究所 | Memory device and semiconductor device |
| CN101013597A (en) * | 2007-01-25 | 2007-08-08 | 林殷茵 | Resistance random access memory and methods of storage operating same |
| CN103403904A (en) * | 2011-03-24 | 2013-11-20 | 株式会社东芝 | Organic molecular memory and method of manufacturing the same |
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