CN104390637A - Small-sized anti-high-overload digital micro-electro-mechanical system (MEMS) gyroscope sensor - Google Patents
Small-sized anti-high-overload digital micro-electro-mechanical system (MEMS) gyroscope sensor Download PDFInfo
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- CN104390637A CN104390637A CN201410659298.7A CN201410659298A CN104390637A CN 104390637 A CN104390637 A CN 104390637A CN 201410659298 A CN201410659298 A CN 201410659298A CN 104390637 A CN104390637 A CN 104390637A
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- mems
- signal processing
- processing circuit
- sensitive structure
- gyroscope
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5776—Signal processing not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Signal Processing (AREA)
- Gyroscopes (AREA)
- Micromachines (AREA)
Abstract
The invention discloses a small-sized anti-high-overload digital micro-electro-mechanical system (MEMS) gyroscope sensor, wherein an MEMS gyroscope sensitive structure and a signal processing circuit are assembled on a low temperature co-fired ceramic (LTCC) substrate by one technology or more technologies of dispensing, golden wire bonding, co-gold welding or parallel seal welding; a metal enclosure frame used for containing the MEMS gyroscope sensitive structure and the signal processing circuit is welded on the LTCC substrate; a metal cover plate is welded on the metal enclosure frame for sealing. According to the small-sized anti-high-overload digital MEMS gyroscope sensor, the novel MEMS sensitive structure and the digital signal processing circuit are adopted and are assembled by the package substrate made from the LTCC material, so that the size of a gyroscope is greatly reduced; debug configuration of the gyroscope signal processing circuit and downloading and burning of parameters can be realized by computer software, so that debugging efficiency of the gyroscope can be improved.
Description
Technical field
The present invention relates to the digital MEMS gyroscope sensor of the resistance to high overload of a kind of miniaturization, belong to electronic technology field.
Background technology
Gyroscope be navigation and attitude measurement system in core sensor.Gyrostatic kind is a lot, and what technology was comparatively ripe has traditional mechanical gyroscope, fibre optic gyroscope etc.MEMS (Micro Electro-Mechanical System MEMS (micro electro mechanical system)) gyroscope is as the one of MEMS sensor, be easy to integrated because its size is little, anti high overload, cost is lower, in being more and more widely used in the navigation of low precision and attitude measurement system.MEMS gyro sensor mainly contains two parts composition: the signal processing circuit of MEMS sensitive structure and MEMS sensitive structure.Its performance is mainly subject to the design and processes level of processing of MEMS sensitive structure, signal processing circuit performance, organizes the impact of package design and the several respects such as technological level, the configuration of signal processing circuit electrical quantity.Traditional MEMS gyroscope many employings Analog ASIC circuit is as corresponding signal processing circuit, circuit volume is larger, anti-interference all more weak with anti high overload ability, and circuit debugging is loaded down with trivial details, violent by influence of temperature change in operating temperature range, not easily realize the integrated and industrialization of the miniaturization of high reliability and produce.
Summary of the invention
Technical matters to be solved by this invention is to provide the digital MEMS gyroscope sensor of the resistance to high overload of a kind of miniaturization, gyrostatic size is reduced greatly, simple and convenient assembly.
For solving the problems of the technologies described above, the invention provides the digital MEMS gyroscope sensor of the resistance to high overload of a kind of miniaturization, it is characterized in that, on ltcc substrate, MEMS gyroscope sensitive structure and signal processing circuit to be assembled on substrate and to be completed the electrical connection of MEMS gyro sensitive structure and signal processing circuit by gold wire bonding, forming air-tight packaging finally by parallel soldering and sealing.
Signal processing circuit adopts SPI communication protocol and PERCOM peripheral communication.
The MEMS gyro sensitive structure of signal processing circuit match resonant frequencies within the scope of 2kHz ~ 30kHz.
Signal processing circuit drives MEMS gyro sensitive structure, sensitive signal detect, C/V conversion, temperature compensation and after completing the download of configuration parameter in signal processing circuit output digit signals.
Driving loop in signal processing circuit produces the drive singal identical with MEMS gyro sensitive structure resonance frequency, the output signal driving test side to detect MEMS gyro sensitive structure, controls the fixed ampllitude to the phase-locked and drive singal of MEMS gyro sensitive structure resonance frequency by the bandpass filter in drive control module and automatic amplitude.
The beneficial effect that the present invention reaches:
The resistance to high overload of miniaturization in the present invention digital MEMS gyro sensor adopts a kind of novel MEMS sensitive structure and digital signal treatment circuit, and by based on LTCC(LTCC) the two assembles by the base plate for packaging that makes of material, greatly reduce gyrostatic size, and realize the debugging configuration of gyroscopes signal processing circuits and the download programming of parameter by computer software, improve gyrostatic debugging efficiency.
Accompanying drawing explanation
Fig. 1 is MEMS gyroscope sensitive structure;
Fig. 2 is the vertical view of Fig. 1;
Fig. 3 is the left view of Fig. 1;
Fig. 4 is MEMS gyroscope electrical connection schematic diagram;
Fig. 5 is MEMS gyroscope group encapsulation cut-open view;
Fig. 6 is the encapsulation schematic diagram removing metal cover board;
In figure, 1, metal cover board; 2, metal enclosure frame; 3, ltcc substrate.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.Following examples only for technical scheme of the present invention is clearly described, and can not limit the scope of the invention with this.
1, MEMS sensitive structure
MEMS sensitive structure adopts the design proposal of single fulcrum angular oscillation formula, and this organization plan drives outer shroud and a responsive inner disc that detects to form by one.Total is suspended on substrate by means of only one, the center strong point, and therefore gyro sensitive structure is that a standard is Floating.Utilize Bulk micro machining to realize shaping of gyro sensitive structure in conjunction with deep etching simultaneously, (gyro sensitive structure bossing is silicon cap to utilize wafer-level vacuum packaged and silocon-silicon linkage technology to complete the bonding of gyro sensitive structure upper silicon cap, inside is high vacuum environment), achieve the gyrostatic sensitive structure of MEMS of high q-factor high precision and anti high overload, its size is only long 3.2 × wide by 3.0 × high 0.9(mm).Owing to having less physical dimension compared with other gyro sensitive structures of the same type, its resistance to high overload ability significantly improves.Its physical dimension as shown in Figure 1, Figure 2 and Figure 3.
2, MEMS sensitive structure signal processing circuit
Whole signal processing circuit is integrated in one piece of integrated circuit because many reasons are very difficult based on the MEMS gyro sensor of analog signal processing circuit by tradition.Therefore, the core of circuit is designed to one piece of integrated circuit and is packaged in shell with MEMS gyroscope sensitive structure by many employings, again the module after encapsulation is welded on pcb board and realizes being electrically connected with other parts of circuit, so often the size of whole MEMS gyro sensor is comparatively large, be unfavorable for miniaturization.
Signal processing circuit in the present embodiment is a digital signal treatment circuit, and whole circuit is all integrated in one piece is of a size of 5 × 2.4(mm) integrated circuit on, greatly reduce the size of signal processing circuit.There is very high programmability and compatibility, adopt SPI communication protocol with PERCOM peripheral communication, by upper computer software realization to the configuration of this circuit and programming.Simultaneously, this circuit can the MEMS gyro sensitive structure of match resonant frequencies within the scope of 2kHz ~ 30kHz and possess closed loop function, the driving to gyro sensitive structure can be realized, sensitive signal detects, C/V conversion, temperature compensation and after completing the download of configuration parameter in signal processing circuit output digit signals.
This signal processing circuit forms by driving loop, responsive loop and digital processing three part.Drive loop can produce the drive singal identical with gyro sensitive structure resonance frequency and detect it in its driven-mode test side to output signal, then realize the fixed ampllitude to the phase-locked of gyro resonance frequency and drive singal by the driven-mode driving circuit in driving loop.Responsive loop can detect the responsive output signal detecting inner disc in gyro sensitive structure, and this signal realizes the output of gyro angular velocity output signal after C/V conversion, amplification, phase demodulating, digital filtering.Again after design and constant multiplier compensate, eliminate gyrosensor and export the drift phenomenon occurred with ambient temperature change.The principle of work schematic diagram of MEMS gyroscope sensitive structure and signal processing circuit as shown in Figure 4.
3, MEMS gyro sensor group encapsulation
Traditional MEMS gyro sensor based on analog signal processing circuit is often comparatively large due to circuit size, and MEMS sensitive structure and signal processing circuit integrate and the protection of Can realization to circuit by the form of many employing pcb boards.Owing to there is more surface-mount type device, therefore assemble comparatively time-consuming.Simultaneously owing to adopting larger pcb board as the main part of circuit, often may deform when sensor is subject to outside thump and even rupture, cause whole sensor to damage.
The group encapsulation of the MEMS gyro sensor in the present invention is based on LTCC(LTCC) substrate 3, MEMS gyroscope sensitive structure 10 and MEMS gyroscopes signal processing circuits 20 be assembled in the shell that ltcc substrate 3, metal enclosure frame 2 and metal cover board 1 form by techniques such as a glue, gold wire bonding, altogether gold solder and parallel soldering and sealing.Its size is only long 14.1 × wide by 11.4 × high 3.1(mm).Achieve the miniaturization of MEMS gyro sensor, simultaneously because less physical dimension makes the resistance to outside thump of sensor.Its assembling schematic diagram of ltcc substrate as shown in Figure 5, Figure 6.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the technology of the present invention principle; can also make some improvement and distortion, these improve and distortion also should be considered as protection scope of the present invention.
Claims (5)
1. the digital MEMS gyroscope sensor of the resistance to high overload of miniaturization, it is characterized in that, on ltcc substrate, MEMS gyroscope sensitive structure and signal processing circuit to be assembled on substrate and to be completed the electrical connection of MEMS gyro sensitive structure and signal processing circuit by gold wire bonding, forming air-tight packaging finally by parallel soldering and sealing.
2. the digital MEMS gyroscope sensor of the resistance to high overload of miniaturization according to claim 1, is characterized in that, signal processing circuit adopts SPI communication protocol and PERCOM peripheral communication.
3. the digital MEMS gyroscope sensor of the resistance to high overload of miniaturization according to claim 1, is characterized in that, the MEMS gyro sensitive structure of signal processing circuit match resonant frequencies within the scope of 2kHz ~ 30kHz.
4. the digital MEMS gyroscope sensor of the resistance to high overload of miniaturization according to claim 1, it is characterized in that, signal processing circuit drives MEMS gyro sensitive structure, sensitive signal detect, C/V conversion, temperature compensation and after completing the download of configuration parameter in signal processing circuit output digit signals.
5. the digital MEMS gyroscope sensor of the resistance to high overload of the miniaturization according to claim 1 or 4, it is characterized in that, driving loop in signal processing circuit produces the drive singal identical with MEMS gyro sensitive structure resonance frequency, the output signal driving test side to detect MEMS gyro sensitive structure, controls the fixed ampllitude to the phase-locked and drive singal of MEMS gyro sensitive structure resonance frequency by the bandpass filter in drive control module and automatic amplitude.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410659298.7A CN104390637A (en) | 2014-11-18 | 2014-11-18 | Small-sized anti-high-overload digital micro-electro-mechanical system (MEMS) gyroscope sensor |
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| CN201410659298.7A CN104390637A (en) | 2014-11-18 | 2014-11-18 | Small-sized anti-high-overload digital micro-electro-mechanical system (MEMS) gyroscope sensor |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106564852A (en) * | 2016-10-20 | 2017-04-19 | 北方电子研究院安徽有限公司 | Packaging structure for high-impact MEMS inertial sensor chip |
| CN106705948A (en) * | 2016-11-01 | 2017-05-24 | 陕西航天时代导航设备有限公司 | Data communication structure for angular speed of flexible gyro system |
| CN109292727A (en) * | 2018-11-13 | 2019-02-01 | 北方电子研究院安徽有限公司 | A kind of two-piece type MEMS gyroscope with temperature compensation function |
| CN109520490A (en) * | 2019-01-02 | 2019-03-26 | 中国船舶重工集团公司第七0七研究所 | A kind of fibre optic gyroscope communication adaptive approach |
| CN110823248A (en) * | 2019-10-16 | 2020-02-21 | 中国兵器工业集团第二一四研究所苏州研发中心 | Low stress set packaging method of MEMS gyroscope |
| CN110926444A (en) * | 2019-12-19 | 2020-03-27 | 北京航天控制仪器研究所 | Vibration non-sensitive silicon micro-electromechanical gyroscope |
| CN114234949A (en) * | 2021-11-16 | 2022-03-25 | 北京航天控制仪器研究所 | Anti-overload MEMS movable structure with strain self-offset function |
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| US20120167683A1 (en) * | 2010-12-30 | 2012-07-05 | Pixart Imaging Incorporation | MEMS device and deformation protection structure therefor and method for making same |
| CN103500737A (en) * | 2013-10-24 | 2014-01-08 | 中国兵器工业集团第二一四研究所苏州研发中心 | Overload-resistant integral LCC (Leadless Chip Carrier) package based on LTCC (Low Temperature Co-Fired Ceramic) substrate |
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| CN101301993A (en) * | 2007-05-11 | 2008-11-12 | 北京大学 | MEMS device vacuum encapsulation method |
| CN102109345A (en) * | 2010-12-13 | 2011-06-29 | 谢元平 | Digital signal processing method and device for micro-mechanical gyroscope |
| US20120167683A1 (en) * | 2010-12-30 | 2012-07-05 | Pixart Imaging Incorporation | MEMS device and deformation protection structure therefor and method for making same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106564852A (en) * | 2016-10-20 | 2017-04-19 | 北方电子研究院安徽有限公司 | Packaging structure for high-impact MEMS inertial sensor chip |
| CN106705948A (en) * | 2016-11-01 | 2017-05-24 | 陕西航天时代导航设备有限公司 | Data communication structure for angular speed of flexible gyro system |
| CN109292727A (en) * | 2018-11-13 | 2019-02-01 | 北方电子研究院安徽有限公司 | A kind of two-piece type MEMS gyroscope with temperature compensation function |
| CN109520490A (en) * | 2019-01-02 | 2019-03-26 | 中国船舶重工集团公司第七0七研究所 | A kind of fibre optic gyroscope communication adaptive approach |
| CN110823248A (en) * | 2019-10-16 | 2020-02-21 | 中国兵器工业集团第二一四研究所苏州研发中心 | Low stress set packaging method of MEMS gyroscope |
| CN110926444A (en) * | 2019-12-19 | 2020-03-27 | 北京航天控制仪器研究所 | Vibration non-sensitive silicon micro-electromechanical gyroscope |
| CN110926444B (en) * | 2019-12-19 | 2021-12-07 | 北京航天控制仪器研究所 | Vibration non-sensitive silicon micro-electromechanical gyroscope |
| CN114234949A (en) * | 2021-11-16 | 2022-03-25 | 北京航天控制仪器研究所 | Anti-overload MEMS movable structure with strain self-offset function |
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