CN104376357A - Light attack resisting method for intelligent card - Google Patents

Light attack resisting method for intelligent card Download PDF

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Publication number
CN104376357A
CN104376357A CN201410427115.9A CN201410427115A CN104376357A CN 104376357 A CN104376357 A CN 104376357A CN 201410427115 A CN201410427115 A CN 201410427115A CN 104376357 A CN104376357 A CN 104376357A
Authority
CN
China
Prior art keywords
metal
light
chip
film
intelligent card
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410427115.9A
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Chinese (zh)
Inventor
李罗生
马哲
陈永强
陈波涛
刘华茂
周建锁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing CEC Huada Electronic Design Co Ltd
Original Assignee
Beijing CEC Huada Electronic Design Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing CEC Huada Electronic Design Co Ltd filed Critical Beijing CEC Huada Electronic Design Co Ltd
Priority to CN201410427115.9A priority Critical patent/CN104376357A/en
Publication of CN104376357A publication Critical patent/CN104376357A/en
Pending legal-status Critical Current

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Abstract

The invention provides a light attack resisting method for an intelligent card. According to the method, mainly, a layer of reflecting film is formed on the back face of a chip, the reflecting film has high reflectivity on light, and a protective effect can be generated on the light attack on the back face of the intelligent card. The reflecting film can be made of metal or other synthetic materials. The reflecting film can be formed through a chemical method or a physical method. For example, for the metal film, metal can be heated and evaporated by utilizing electron beams, so that a layer of film can be formed on the back face of a silicon wafer, and the film can also be formed by adopting other physical methods.

Description

The anti-light attack method of a kind of smart card
Technical field
The present invention relates to the anti-light attack method of a kind of smart card.
Background technology
Smart card is widely used in the fields such as bank, social security, traffic, health care, the inner personal information, significant data etc. often storing secret.
Existing common smart card architecture is shown in Figure 1, and the back side of intelligent card chip 110 is pasted onto on the base of packaging frame 130 by adhesive glue 120, and then carries out the encapsulation of chip, forms smart card card.
In order to obtain intelligent card chip key or other important information, assailant adopts various means to attack chip, and wherein, light injection attacks is a kind of conventional fault injection attacks means.Injected by light, intelligent card chip duty is changed, thus the key likely obtained in chip or other significant data information.
Generally there is metal connecting line in intelligent card chip front, utilizes metal connecting line can keep out light and attacks.But, when assailant also can adopt light to attack from the back side chip.When carrying out light attack from chip back, first destroy packaging frame 130 in Fig. 1.General packaging frame material is metal, and after metal framework is destroyed, the back side of chip is exposed, and light beam can directly be beaten on the back side of chip.
Carry out light attack to chip, the wavelength of light is generally between 400nm ~ 1200nm.Because chip main material is silicon Si, silicon is low to light reflectance, and transmissivity is high.So most luminous energy enters into chip, act on the device near chip front side.
Device comprises MOSFET, resistance or electric capacity etc., and be subject to the impact of high energy light, state changes.
Device state change causes whole circuit working state to change, and may export unintended information, assailant utilizes these information, may derive and extract the important informations such as the key of chip.
The present invention, mainly for the problems referred to above, proposes the means of defence attacked for resisting intelligent card chip back light.
Summary of the invention
The present invention proposes and form one deck reflectance coating at chip back, carry out the method for light attack protection.
Above-mentioned reflective film material can be metal, also can be other synthetic material, can be one deck, or multilayer.If multilayer material, the metal that most surface layer (close to air layer) is high reflectance, can carry out usable reflection to incident light energy.
The method forming reflectance coating can be physics or chemical method.The method such as forming metal film can utilize electron beam to heat metal, metal heated evaporation, forms layer of metal film at silicon chip back side.Also can adopt chemical method, precipitating metal, plate layer of metal layer at silicon chip surface.
Reflectance coating plated film can after disk wafer be thinning, before scribing; Or after chip scribing, each chip is processed respectively, plates conductive layer.
The method that the present invention proposes can be applied in the intelligent card chip in the fields such as finance, social security, health care, traffic.
Accompanying drawing explanation
Fig. 1 is common smart card architecture;
Fig. 2 is the smart card architecture with back light attack protective capacities that the present invention proposes.
Embodiment
Below in conjunction with accompanying drawing for the method for physics metal-coated membrane, the specific embodiment of the present invention is described.
Shown in Figure 2, chip back layer of metal aluminium Al generation type is as follows:
First layer protecting film is sticked in disk wafer front; due to disk original thickness thicker (> 700um); the encapsulation of chip can be affected, so it is thinning next to need to carry out grinding to disk, be thinned to 200um left and right thickness.After thinning, the silicon materials at the wafer back side are corroded.Silicon corrosion makes disk surfaces become coarse, can eliminate disk surfaces stress, metal can be made to bond simultaneously.
Next step adopts electron beam to carry out metal A l evaporation.Electron beam under high pressure accelerates, and clashes into metal surface, and make local, metal surface produce high temperature evaporation, metal A l steam forms layer of metal Al film in the back side of disk precipitation.
The thickness of metal film can control according to parameters such as evaporation times.
After Al metal membrane is formed, the chip on disk is subtracted and draws encapsulation, form smart card architecture figure shown in Fig. 2.
If need to form metal multilayer film, can process multiple layer metal according to the method described above, thus form metal multilayer film in the back side of disk precipitation.
Although content of the present invention is described in detail by above-mentioned embodiment, will be appreciated that foregoing description should not be considered to limitation of the present invention.Therefore, protection scope of the present invention should be limited to the appended claims.

Claims (3)

1. be applied in smart card the method for resisting chip back light and attacking, it is characterized in that forming one deck or multilayer to the reflectance coating of light high reflectance at chip back.
2. the method for claim 1, it is characterized in that reflective film material can be metal, also can be other synthetic material.
3. the method for claim 1, is characterized in that reflectance coating can be one deck, or multilayer; If be multilayer, outermost layer is the material of high reflectance, can carry out usable reflection to incident light energy.
CN201410427115.9A 2014-08-27 2014-08-27 Light attack resisting method for intelligent card Pending CN104376357A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410427115.9A CN104376357A (en) 2014-08-27 2014-08-27 Light attack resisting method for intelligent card

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410427115.9A CN104376357A (en) 2014-08-27 2014-08-27 Light attack resisting method for intelligent card

Publications (1)

Publication Number Publication Date
CN104376357A true CN104376357A (en) 2015-02-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410427115.9A Pending CN104376357A (en) 2014-08-27 2014-08-27 Light attack resisting method for intelligent card

Country Status (1)

Country Link
CN (1) CN104376357A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021022566A1 (en) * 2019-08-08 2021-02-11 深圳市汇顶科技股份有限公司 Security chip, preparation method for security chip, and electronic device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465349A (en) * 1990-10-19 1995-11-07 Gemplus Card International System for monitoring abnormal integrated circuit operating conditions and causing selective microprocessor interrupts
CN1254143A (en) * 1999-07-20 2000-05-24 广州市宝真科技开发有限公司 Hidden mark anti-falase printing product and its production method
CN1323448A (en) * 1998-10-16 2001-11-21 施蓝姆伯格系统公司 Integrated circuit chip made secure against the action of electromagnetic radiation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465349A (en) * 1990-10-19 1995-11-07 Gemplus Card International System for monitoring abnormal integrated circuit operating conditions and causing selective microprocessor interrupts
CN1323448A (en) * 1998-10-16 2001-11-21 施蓝姆伯格系统公司 Integrated circuit chip made secure against the action of electromagnetic radiation
CN1254143A (en) * 1999-07-20 2000-05-24 广州市宝真科技开发有限公司 Hidden mark anti-falase printing product and its production method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021022566A1 (en) * 2019-08-08 2021-02-11 深圳市汇顶科技股份有限公司 Security chip, preparation method for security chip, and electronic device
US11462490B2 (en) 2019-08-08 2022-10-04 Shenzhen GOODIX Technology Co., Ltd. Security chip, security chip production method and electronic device

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Address after: 102209 Beijing, Beiqijia, the future of science and technology in the south area of China electronic network security and information technology industry base C building,

Applicant after: Beijing CEC Huada Electronic Design Co., Ltd.

Address before: 100102 Beijing City, Chaoyang District Lize two Road No. 2, Wangjing science and Technology Park A block five layer

Applicant before: Beijing CEC Huada Electronic Design Co., Ltd.

COR Change of bibliographic data
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Application publication date: 20150225

WD01 Invention patent application deemed withdrawn after publication