CN104372308B - Silicon nitride film preparation device - Google Patents
Silicon nitride film preparation device Download PDFInfo
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- CN104372308B CN104372308B CN201410704753.0A CN201410704753A CN104372308B CN 104372308 B CN104372308 B CN 104372308B CN 201410704753 A CN201410704753 A CN 201410704753A CN 104372308 B CN104372308 B CN 104372308B
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- fire door
- nitride film
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- Chemical Vapour Deposition (AREA)
Abstract
Production cost can be reduced while can also avoid the Silicon nitride film preparation device that copper electrode is miscued the invention discloses a kind of.Fire door is fixed on pressure pin by the device, when needing to open fire door, drive device, which only need to be started, makes sliding shoe be moved along litter, sliding block drives bracket to move while movement and then drives pressure pin movement, because fire door is fixed on pressure pin, pressure pin can open fire door in movement, because copper electrode is arranged on the inner central of fire door, electrode jack is arranged on the one end of quartz boat towards fire door, thus, when placing quartz boat, just the position of quartz boat placement, which can be adjusted, makes copper electrode accurately insert in electrode jack, it effectively prevent because the situation that blindness alignment causes copper electrode to be miscued occurs, in addition, the door opening and closing of the device is all the mobile completion by pressure pin, fragile drive device is not allowed, production cost can be substantially reduced.It is adapted in the field popularization and application of silicon chip of solar cell process equipment.
Description
Technical field
The present invention relates to silicon chip of solar cell process equipment field, especially a kind of Silicon nitride film preparation device.
Background technology
Because solar irradiation is mapped on the silicon chip of solar cell, a portion sunshine can be reflected, even if to inciting somebody to action
Silicon face is designed to matte, although incident light, which can produce multiple reflections, can increase the absorptivity of light, still, still has one
The sunshine divided can be reflected, and in order to reduce the reflection loss of sunshine, the method generally taken is in solar cell
Silicon chip surface covers one layer of antireflective coating, and this layer film can reduce the reflectivity of sunshine, increase photoelectric transformation efficiency, in crystalline substance
In body silicon face deposit antireflective coating technology, silicon nitride film has that high-insulativity, chemical stability are good, compactness is good, hardness is high
The features such as, while there is the good ability for sheltering metal and water ion deposition, so as to be widely adopted.
In crystal silicon solar energy battery manufacturing process, the usual using plasma enhancing chemical gaseous phase of silicon nitride film is prepared
Sedimentation, referred to as PECVD (Plasma Enhanced Chemical Vapor Deposition), PECVD is to utilize forceful electric power
Field ionizes required gas source molecular to produce in plasma, plasma containing many activity very high chemical group, this
A little groups pass through through a series of chemistry and plasma reaction, in silicon chip surface formation solid film.
At present, in crystal silicon solar energy battery manufacturing process, mainly include setting for preparing the device of silicon nitride film
Have and graphite boat is provided with the vacuum deposition chamber of fire door, vacuum moulding machine room, silicon chip is positioned on graphite boat, and vacuum deposition chamber is provided with
It is connected with the air inlet pipe for being passed through process gas, the exhaust outlet and is connected with air inlet and exhaust outlet, the air inlet
Delivery pipe, discharge pipe end is connected with vavuum pump, and the import of vavuum pump is connected with the outlet of delivery pipe, the outlet connection of vavuum pump
There is tail comb, the process gas refers to the gas for being used to react in silicon nitride film preparation process, generally, in nitridation
Process gas used in silicon fiml preparation process mainly has following two：It is prepared by ammonia, silane (silane), the silicon nitride film
The course of work of device is as follows：Various process gas are passed through in vacuum moulding machine room by different air inlet pipe respectively, it is different
Into ion after process gas is mixed in vacuum moulding machine room and in vacuum deposition chamber's internal ionization, produced by multiple impacts a large amount of
Active group, be progressively attached to the surface of silicon chip of solar cell, form one layer of SixNy film.This silicon nitride film prepares dress
Put and there is problems with actual use：Firstly, since the fire door of the device for preparing silicon nitride film is generally heavier,
More difficulty is opened manually or closes, in order to convenient graphite boat will be put into vacuum moulding machine room and be taken out of vacuum moulding machine room
Go out, the switching device for opening or closing fire door is generally both provided with fire door, existing switching device is included before one
Stepper motor and an electric rotating machine, preceding stepper motor are used to contact fire door with separating with vacuum deposition chamber, and electric rotating machine is used for will
Fire door rotates to the side of fire door, has conceded the space of turnover vacuum deposition chamber, and preceding stepper motor passes through a pull bar and fire door
It is connected, electric rotating machine is connected by a swingle with fire door, and this switching device in use, has problems with：
The switching device of this structure, electric rotating machine is located at the two ends of swingle with fire door respectively, and this, which allows for electric rotating machine, needs to carry
It can just rotate fire door for very big turning moment, the turning moment that electric rotating machine is born is larger, and the load of motor is larger, holds very much
Easily electric rotating machine is burnt out, the service life of electric rotating machine is shorter, it is necessary to frequently change motor, not only influence the normal of production
Carry out, while production cost is also considerably increased, meanwhile, the copper electrode of existing Silicon nitride film preparation device is integrally fixed at vacuum
The rear end of settling chamber, fire door is provided in the front end of vacuum deposition chamber, after graphite boat is put into vacuum moulding machine room, graphite boat
The electrode jack that sets of end face need to be powered after being aligned with copper electrode, but be due to copper electrode in vacuum moulding machine room
Portion, can only constantly attempt to be directed at it, so be easy to miscue copper electrode, it is impossible to match with jack, and of insertion
With degree it is difficult to ensure that, being easily caused depositing operation can not be smoothed out, and maintenance when it is very inconvenient；Secondly, in silicon nitride film
During preparation facilities works, the temperature in vacuum moulding machine room need to be maintained in a stable scope, due to existing nitrogen
SiClx membrane preparation device is all that directly the gaseous mixture of ammonia, silane is passed directly into vacuum moulding machine room, due to ammonia, hydrogenation
The temperature of silicon is relatively low,, will certainly be to true after the two is up to 400 degrees Celsius of hot environment into temperature normally close to room temperature
Temperature in empty settling chamber causes large effect, if temperature fluctuation changes greatly and can cause to eventually form in vacuum moulding machine room
Silicon nitride film levels of audit quality it is uneven, influence cell piece conversion efficiency；Furthermore, existing Silicon nitride film preparation device is in deposition
During the tail gas that produces all be in the presence of vavuum pump, to be discharged into the external world along delivery pipe, vavuum pump, tail comb successively, by
In deposition process silane some can not react completely, responseless silane and tail gas mix discharge, silane
Gas run into air will spontaneous combustion, due to tail gas in delivery pipe and vavuum pump all without air is run into, would not also occur
Spontaneous combustion, but enter once tail gas after tail comb, because tail comb is connected with outside air, therefore, into the tail gas of tail comb
In the silane that contains be easy to spontaneous combustion so that tail comb is often caught fire, and the blast of tail comb is also resulted in when serious, causes to produce thing
Therefore, its security is poor；In addition, existing Silicon nitride film preparation device is needed first with vavuum pump before depositing operation is carried out
Certain vacuum will be evacuated in vacuum moulding machine room, depositing operation is then carried out again, in deposition process, vavuum pump is always
Its purpose one that works is in order to ensure to keep certain vacuum in vacuum moulding machine room, while will also deposit the tail gas row produced
Go out, due to only having an internal diameter to be between the vavuum pump of existing Silicon nitride film preparation device and the exhaust outlet of vacuum deposition chamber
60mm or so delivery pipe, the discharge bore is thicker, before depositing operation by effect when being vacuumized in vacuum moulding machine room compared with
It is good, still,, can be quick by the process gas in vacuum moulding machine room because discharge bore is thicker in deposition process
Take away, some process gas are also following and reaction is just taken away by vavuum pump, so just need to be passed through substantial amounts of process gas
Being normally carried out for deposition reaction is can guarantee that, the waste of process gas is easily caused, causes production cost to increase.
The content of the invention
The technical problems to be solved by the invention, which are to provide one kind, can reduce production cost while can also avoid copper electricity
The Silicon nitride film preparation device that pole is miscued.
The technical solution adopted for the present invention to solve the technical problems is：The Silicon nitride film preparation device, including be provided with
Graphite boat is provided with the vacuum deposition chamber of fire door, vacuum moulding machine room, silicon chip is positioned on graphite boat, vacuum deposition chamber be provided with into
The row of being connected with the air inlet pipe for being passed through process gas, the exhaust outlet is connected with gas port and exhaust outlet, the air inlet
Pipe is put, discharge pipe end is connected with vavuum pump, and the import of vavuum pump is connected with the outlet of delivery pipe, and the outlet of vavuum pump is connected with
The pressure pin for carrying graphite boat is provided with below tail comb, the graphite boat, the pressure pin passes through stove towards one end of fire door
Door, the fire door is fixed on pressure pin, and the center on the inside of the fire door is fixed with copper electrode, the graphite boat towards fire door one
End is provided with electrode jack, and the position of the copper electrode is corresponding with the position of electrode jack, and the pressure pin stretches out the one of fire door
End is fixed with bracket, and the bracket is fixed on sliding shoe by connecting rod, and the sliding shoe is fixed on litter, described to slide
Block, litter are respectively positioned on the outside at fire door edge, and the axis and vacuum moulding machine chamber axis of the litter are parallel to each other, the sliding shoe
On be connected with the drive device for making sliding shoe be moved along litter.
It is further that the fire door includes Quartz furnace door and the supporter composition on the outside of Quartz furnace door, the branch
Support body is made using the pig iron, and the surface of the supporter is provided with multiple lightening cores.
It is further that gas mixer, the gas mixer are provided between the air inlet pipe and air inlet
Including core body, housing, core body is arranged in housing, and core surface is provided with helicla flute, the inwall of the helicla flute and housing it is interior
Wall surrounds the spiral gas passage of closing, and one end of the spiral gas passage is connected with air inlet pipe, the other end and vacuum
The air inlet being provided with settling chamber is connected, and the outer surface of the housing is provided with heater.
It is further that the heater includes one layer of heating cotton and one layer of adiabatic cloth, the heating cotton and adiabatic cloth
Between be provided with resistive heater, the resistive heater is connected with power supply.
It is further to be provided with silicone hydride combustion room between the outlet of the vavuum pump and tail comb.
It is further that it is 150mm-300mm stainless steels that an internal diameter is set between the outlet of vavuum pump and tail comb
Cylinder forms described silicone hydride combustion room.
Being further that the outer surface of the cylinder is provided between multiple tight loops, adjacent tight loop passes through metal
Bar links together.
It is further to be provided with shunt valve, the shunt valve to set between the import of the vavuum pump and exhaust outlet
Have for making to be provided with for making the work of delivery pipe on and off on the by-passing valve of shunt valve on and off, the delivery pipe
Skill valve, the internal diameter of the delivery pipe is 50mm-70mm, and the internal diameter of the shunt valve is 15mm-25mm.
It is further that the internal diameter of the delivery pipe is 60mm, and the internal diameter of the shunt valve is 20mm.
It is further that the technique valve, by-passing valve are magnetic valve, being connected with the first trigger-type on the technique valve opens
Close, be connected with the by-passing valve in the second touch switch, the vacuum moulding machine room and be provided with vacuum meter, in addition to control
Device, first touch switch, the second touch switch, vacuum meter are electrically connected with the controller respectively.
The beneficial effects of the invention are as follows：Fire door is fixed on pressure pin by the Silicon nitride film preparation device, is needing to open stove
Men Shi, only need to start drive device makes sliding shoe be moved along litter, and sliding block drives bracket to move and then drive while movement
Pressure pin is moved, because fire door is fixed on pressure pin, and pressure pin can open fire door in movement, and pressure pin is continued to move to can be by vacuum moulding machine
Indoor graphite boat is pulled out, and the graphite boat for depositing end is removed, and the new graphite boat for filling silicon chip is placed on pressure pin, due to
Copper electrode is arranged on the inner central of fire door, and electrode jack is arranged on the one end of graphite boat towards fire door, thus, in placing graphite
During boat, just can adjust the position of graphite boat placement makes copper electrode accurately insert in electrode jack, effectively prevent because blindly
Alignment causes the situation that copper electrode miscued to occur, and can ensure that electrode contact is firm, it is ensured that subsequent deposition process it is steady
Fixed to carry out, in addition, the door opening and closing of the Silicon nitride film preparation device is all the mobile completion by pressure pin, it only needs to a drive
The load that dynamic device and the drive device are born is smaller, thus, it is not easy to drive device is damaged, making for drive device can be extended
With the life-span, it is not necessary to frequently change, the expense needed for purchase drive device is reduced, production cost can be substantially reduced, meanwhile,
Parts need not be frequently changed, being normally carried out for production is also ensure that.
Brief description of the drawings
Fig. 1 is the structural representation of Silicon nitride film preparation device of the present invention；
Fig. 2 is the side view of Silicon nitride film preparation device of the present invention；
Marked in figure：Fire door 1, Quartz furnace door 101, supporter 102, lightening core 103, vacuum deposition chamber 2, graphite boat 3,
Air inlet 4, exhaust outlet 5, air inlet pipe 6, delivery pipe 8, vavuum pump 9, tail comb 10, pressure pin 11, gas mixer 12, core body
121st, housing 122, helicla flute 123, heating cotton 124, adiabatic cloth 125, resistive heater 126, silicone hydride combustion room 13, shunt valve
14th, by-passing valve 15, technique valve 16, the first touch switch 17, the second touch switch 18, vacuum meter 19, controller 20, copper electricity
Pole 21, electrode jack 22, bracket 23, sliding shoe 24, litter 25.
Embodiment
The present invention is further described below in conjunction with the accompanying drawings.
As shown in Figure 1, 2, the Silicon nitride film preparation device, including it is provided with the vacuum deposition chamber 2 of fire door 1, vacuum moulding machine
Graphite boat 3 is provided with room 2, silicon chip is positioned on graphite boat 3, vacuum deposition chamber 2 provided with air inlet 4 and exhaust outlet 5, it is described enter
It is connected with gas port 4 on the air inlet pipe 6 for being passed through process gas, the exhaust outlet 5 and is connected with delivery pipe 8, the end of delivery pipe 8
Vavuum pump 9 is connected with, the import of vavuum pump 9 is connected with the outlet of delivery pipe 8, the outlet of vavuum pump 9 is connected with tail comb 10, institute
The pressure pin 11 being provided with below graphite boat 3 for carrying graphite boat 3 is stated, the pressure pin 11 passes through fire door towards one end of fire door 1
1, the fire door 1 is fixed on pressure pin 11, and the center of the inner side of the fire door 1 is fixed with copper electrode 21, and the graphite boat 3 is towards stove
One end of door 1 is provided with electrode jack 22, and the position of the copper electrode 21 is corresponding with the position of electrode jack 22, the pressure pin
One end of 11 stretching fire doors 1 is fixed with bracket 23, and the bracket 23 is fixed on sliding shoe 24 by connecting rod, the sliding shoe
24 are fixed on litter 25, and the sliding shoe 24, litter 25 are respectively positioned on the outside at the edge of fire door 1, the axis of the litter 25 with
The axis of vacuum deposition chamber 2 is parallel to each other, and the drive device for making sliding shoe 24 be moved along litter 25 is connected with the sliding shoe 24.
Fire door 1 is fixed on pressure pin 11 by the Silicon nitride film preparation device, when needing to open fire door 1, and only need to start drive device makes
Sliding shoe 24 is moved along litter 25, and sliding block 24 drives bracket 23 to move while movement, and then drives pressure pin 11 to move, due to
Fire door 1 is fixed on pressure pin 11, and pressure pin 11 can open fire door 1 in movement, and pressure pin 11 is continued to move to can be by vacuum deposition chamber 2
Graphite boat 3 pull out, the graphite boat 3 that terminates will be deposited and removed, the new graphite boat 3 for filling silicon chip is placed on pressure pin 11, by
The inner central of fire door 1 is arranged in copper electrode 21, and electrode jack 22 is arranged on graphite boat 3 towards one end of fire door 1, thus,
In placing graphite boat 3, just can adjust the position of the placement of graphite boat 3 makes copper electrode 21 accurately insert in electrode jack 22,
It effectively prevent because the situation that blindness alignment causes copper electrode 21 to be miscued occurs, and can ensure that electrode contact is firm, protect
The stable progress of subsequent deposition process is demonstrate,proved, in addition, it is all shifting by pressure pin 11 that the fire door 1 of the Silicon nitride film preparation device, which is opened and closed,
Dynamic to complete, it is smaller that it only needs to the load that a drive device and the drive device bear, thus, it is not easy to damage driving dress
Put, the service life of drive device can be extended, it is not necessary to frequently change, reduce the expense needed for purchase drive device, can
To substantially reduce production cost, simultaneously, it is not necessary to frequently change parts, it also ensure that being normally carried out for production.
The fire door 1 includes Quartz furnace door 101 and the supporter 102 positioned at the outside of Quartz furnace door 101 is constituted, the support
Body 102 is made using the pig iron, and the surface of the supporter 102 is provided with multiple lightening cores 103.Because supporter 102 is usual
All it is to be made using the pig iron, its heavier-weight is relatively elaborate in movable door 1, therefore, by setting lightening core 103
The weight of fire door 1 can be reduced, be easy to fire door 1 to move.
Gas mixer 12 is provided between the air inlet pipe 6 and air inlet 4, the gas mixer 12 includes core
Body 121, housing 122, core body 121 are arranged in housing 122, and the surface of core body 121 is provided with helicla flute 123, the helicla flute 123
The inwall of inwall and housing 122 surrounds the spiral gas passage of closing, one end and the air inlet pipe 6 of the spiral gas passage
It is connected, the other end is connected with the air inlet 4 being provided with vacuum deposition chamber 2, the outer surface of the housing 122 is provided with heating dress
Put.By setting gas mixer 12 between air inlet pipe 6 and air inlet 4 so that two kinds of process gas are sufficiently mixed uniformly
Afterwards, then it is passed through in vacuum deposition chamber 2 and is reacted, the deposition gases concentration in such vacuum deposition chamber 2 everywhere is all identical, can be with
The silicon nitride film uniformity for forming the silicon chip of different places in vacuum deposition chamber 2 is greatly improved, and can greatly improve product matter
Amount, due to being provided with heater in the outer surface of housing 122, heater can enter to the mixed gas of two kinds of process gas
Row heating, it is to avoid the relatively low process gas of temperature causes large effect to the temperature in vacuum deposition chamber 2, in silicon nitride film system
During standby device work, it is ensured that the temperature in vacuum deposition chamber 2 is maintained in a stable scope so that last
The silicon nitride film uniform quality of formation is consistent, keeps the conversion efficiency of cell piece.
The heater can use existing various firing equipments, such as steam heating, Baking out etc., as excellent
The mode of choosing is：The heater includes one layer of heating cotton 124 and one layer of adiabatic cloth 125, the heating cotton 124 and adiabatic cloth
Resistive heater 126 is provided between 125, the resistive heater 126 is connected with power supply, and this heater is simple in construction,
One layer of heating cotton 124 and one layer of adiabatic cloth 125 need to only be included in the outer surface of housing 122, heating cotton 124 and adiabatic cloth 125 it
Between be provided with resistive heater 126, cost of manufacture is relatively low, while heating effect is also preferable.
It is further to be provided with silicone hydride combustion room 13 between the outlet of the vavuum pump 9 and tail comb 10.Pass through vacuum
Silicone hydride combustion room 13 is set between the outlet of pump 9 and tail comb 10 so that Silicon nitride film preparation device is produced in deposition process
Tail gas be all in the presence of vavuum pump 9, to be discharged into successively along delivery pipe 8, vavuum pump 9, silicone hydride combustion room 13, tail comb 10
The external world, due to tail gas in delivery pipe 8 and vavuum pump 9 all without air is run into, would not also occur spontaneous combustion, thus, tail gas
Entering silicone hydride combustion room 13 after the discharge of vavuum pump 9 will be with air contact, and the silane contained in tail gas will be in silicone hydride combustion
Spontaneous combustion occurs in room 13, the silicone hydride combustion that tail gas is contained in silicone hydride combustion room 13 totally enters back into tail comb 10, entered afterwards
To enter the tail gas of tail comb 10 would not also occur spontaneous combustion due to not containing silane, it is to avoid the dangerous feelings that tail comb 10 often catches fire
Condition occurs, and its security is greatly improved.
The silicone hydride combustion room 13 can be made of the larger cylinder of structural strength, and have sufficiently large space, be made
To be preferred, it is that 150mm-300mm stainless steel cylinders are formed that an internal diameter is set between the outlet of vavuum pump 9 and tail comb 10
Described silicone hydride combustion room 13, which is simple in construction, and transformation is convenient, is easy to process and safeguards.
In order to further improve the structural strength of cylinder, the outer surface of the cylinder is provided with multiple tight loops, adjacent
Linked together between tight loop by bonding jumper.
In addition, being provided with shunt valve 14 between the import of the vavuum pump 9 and exhaust outlet 5, set on the shunt valve 14
Have for making to be provided with the by-passing valve 15 of the on and off of shunt valve 14, the delivery pipe 8 for making delivery pipe 8 turn on or close
The technique valve 16 closed, the internal diameter of the delivery pipe 8 is 50mm-70mm, and the internal diameter of the shunt valve 14 is 15mm-25mm.Pass through
Shunt valve 14 is set so that form two passes between the import of vavuum pump 9 and exhaust outlet 5, needed before depositing operation is carried out
During by being evacuated to certain vacuum in vacuum deposition chamber 2, by-passing valve 15 is closed, technique valve 16 is opened, so can be by
Certain vacuum is quickly evacuated in vacuum deposition chamber 2, when vacuumize finish after enter condensation process stage when, by technique valve
16 close and simultaneously open by-passing valve 15, in deposition process, and its purpose one that works always of vavuum pump 9 is to ensure vacuum
Certain vacuum is kept in settling chamber 2, while will also deposit the tail gas discharge produced, due to smaller of the internal diameter of shunt valve 14
Have 1/3rd or so of the internal diameter of delivery pipe 8, operationally, the gas flow of extraction is just greatly reduced such vavuum pump 9, can be made
The process gas obtained in vacuum deposition chamber 2 has time enough reaction, while the process gas being passed through into vacuum deposition chamber 2
Amount is also greatly reduced, it is to avoid process gas unnecessary waste, can reduce production cost.
Further, in order that certain vacuum can be quickly evacuated in vacuum deposition chamber 2, while also avoiding vacuum
The overload operation of pump 9, the internal diameter of the delivery pipe 8 is preferably 60mm, in order that the process gas in vacuum deposition chamber 2 is abundant
Reaction also ensure that the effect of depositing operation simultaneously, and the internal diameter of the shunt valve 14 is preferably 20mm.
Furthermore, in order that technique valve 16, by-passing valve 15 can be automatically controlled, realize unattended, the technique valve 16, side
Port valve 15 is magnetic valve, is connected with the technique valve 16 on first touch switch 17, the by-passing valve 15 and is connected with
Vacuum meter 19, in addition to controller 20, first trigger-type are provided with two touch switch 18, the vacuum deposition chamber 2
The 17, second touch switch 18 of switch, vacuum meter 19 are electrically connected with controller 20 respectively, when vavuum pump 9 is started working, control
Device 20 controls the first touch switch 17 to close the closing shunt valve 14 of by-passing valve 15, and the second touch switch 18 of control makes technique
Valve 16 is opened delivery pipe 8 and turned on, the continuous firing of vavuum pump 9, and vacuum meter 19 is used for measuring the vacuum in vacuum deposition chamber 2 and will
The vacuum values measured pass to controller 20, when the numerical value that controller 20 detects vacuum meter 19 reaches regulation requirement, control
Device 20 controls the first touch switch 17 to turn on the opening shunt valve 14 of by-passing valve 15, and the second touch switch 18 of control makes technique
Valve 16 is closed delivery pipe 8 and closed, now into condensation process stage, and whole process is without artificial to technique valve 16 and by-passing valve 15
It is controlled, realizes unattended.
Claims (9)
1. Silicon nitride film preparation device, including be provided with the vacuum deposition chamber (2) of fire door (1), vacuum deposition chamber (2) provided with stone
Mo Zhou (3), silicon chip is positioned on graphite boat (3), vacuum deposition chamber (2) provided with air inlet (4) and exhaust outlet (5), it is described enter
It is connected with gas port (4) on the air inlet pipe (6) for being passed through process gas, the exhaust outlet (5) and is connected with delivery pipe (8), is arranged
Put pipe (8) end and be connected with vavuum pump (9), the import of vavuum pump (9) is connected with the outlet of delivery pipe (8), vavuum pump (9) go out
Mouth is connected with tail comb (10), it is characterised in that：The pressure pin for carrying graphite boat (3) is provided with below the graphite boat (3)
(11), the pressure pin (11) passes through fire door (1) towards one end of fire door (1), and the fire door (1) is fixed on pressure pin (11), institute
State the center on the inside of fire door (1) and be fixed with copper electrode (21), the graphite boat (3) is provided with electrode towards one end of fire door (1)
Jack (22), the position of the copper electrode (21) is corresponding with the position of electrode jack (22), and the pressure pin (11) stretches out fire door
(1) one end is fixed with bracket (23), and the bracket (23) is fixed on sliding shoe (24) by connecting rod, the sliding shoe
(24) it is fixed on litter (25), the sliding shoe (24), litter (25) are respectively positioned on the outside at fire door (1) edge, the litter
(25) axis and vacuum deposition chamber (2) axis are parallel to each other, and being connected with the sliding shoe (24) makes sliding shoe (24) along cunning
The mobile drive device of pole (25), is provided with shunt valve (14) between the import of the vavuum pump (9) and exhaust outlet (5), described
It is provided with shunt valve (14) for making to set on the by-passing valve (15) of shunt valve (14) on and off, the delivery pipe (8)
Have for making the technique valve (16) of delivery pipe (8) on and off, the internal diameter of the delivery pipe (8) is 50mm-70mm, the side
The internal diameter of road pipe (14) is 15mm-25mm.
2. Silicon nitride film preparation device as claimed in claim 1, it is characterised in that：The fire door (1) includes Quartz furnace door
(101) supporter (102) composition and on the outside of Quartz furnace door (101), the supporter (102) is using pig iron making
Into the surface of the supporter (102) is provided with multiple lightening cores (103).
3. Silicon nitride film preparation device as claimed in claim 2, it is characterised in that：The air inlet pipe (6) and air inlet (4) it
Between be provided with gas mixer (12), the gas mixer (12) includes core body (121), housing (122), core body
(121) it is arranged in housing (122), core body (121) surface is provided with helicla flute (123), the inwall and shell of the helicla flute (123)
The inwall of body (122) surrounds the spiral gas passage of closing, one end and air inlet pipe (6) phase of the spiral gas passage
Even, the other end is connected with the air inlet (4) being provided with vacuum deposition chamber (2), and the outer surface of the housing (122), which is provided with, to be added
Thermal.
4. Silicon nitride film preparation device as claimed in claim 3, it is characterised in that：The heater includes one layer of heating cotton
(124) with one layer of adiabatic cloth (125), resistive heater (126) is provided between the heating cotton (124) and adiabatic cloth (125),
The resistive heater (126) is connected with power supply.
5. Silicon nitride film preparation device as claimed in claim 4, it is characterised in that：Arranged with tail the outlet of the vavuum pump (9)
Silicone hydride combustion room (13) is provided between pipe (10).
6. Silicon nitride film preparation device as claimed in claim 5, it is characterised in that：In the outlet of vavuum pump (9) and tail comb
(10) it is that 150mm-300mm stainless steel cylinders form described silicone hydride combustion room (13) that an internal diameter is set between.
7. Silicon nitride film preparation device as claimed in claim 6, it is characterised in that：The outer surface of the cylinder is provided with multiple
Linked together between tight loop, adjacent tight loop by bonding jumper.
8. Silicon nitride film preparation device as claimed in claim 7, it is characterised in that：The internal diameter of the delivery pipe (8) is 60mm,
The internal diameter of the shunt valve (14) is 20mm.
9. Silicon nitride film preparation device as claimed in claim 8, it is characterised in that：The technique valve (16), by-passing valve (15)
It is magnetic valve, is connected with the technique valve (16) on the first touch switch (17), the by-passing valve (15) and is connected with
Two touch switch (18), are provided with vacuum meter (19), in addition to controller (20) in the vacuum deposition chamber (2), and described the
One touch switch (17), the second touch switch (18), vacuum meter (19) are electrically connected with controller (20) respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410704753.0A CN104372308B (en) | 2014-11-26 | 2014-11-26 | Silicon nitride film preparation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410704753.0A CN104372308B (en) | 2014-11-26 | 2014-11-26 | Silicon nitride film preparation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104372308A CN104372308A (en) | 2015-02-25 |
| CN104372308B true CN104372308B (en) | 2017-11-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410704753.0A Active CN104372308B (en) | 2014-11-26 | 2014-11-26 | Silicon nitride film preparation device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107993966B (en) * | 2017-12-18 | 2020-09-18 | 湖南红太阳光电科技有限公司 | Tubular PECVD (plasma enhanced chemical vapor deposition) online control system and control method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102321877B (en) * | 2011-09-05 | 2013-08-07 | 北京七星华创电子股份有限公司 | Electrode introduction device |
| CN202643837U (en) * | 2012-07-06 | 2013-01-02 | 乐山新天源太阳能科技有限公司 | Silicon nitride film preparation device |
| CN202688448U (en) * | 2012-07-08 | 2013-01-23 | 扬州鑫晶光伏科技有限公司 | PECVD (plasma enhanced chemical vapor deposition) equipment with automatic control system for heat exhaust fan |
| CN203530506U (en) * | 2013-10-25 | 2014-04-09 | 乐山新天源太阳能科技有限公司 | Silicon chip diffusion furnace for solar battery |
| CN204211822U (en) * | 2014-11-26 | 2015-03-18 | 乐山新天源太阳能科技有限公司 | Silicon nitride film preparation device |
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