CN104364904A - Light emitting diode components and methods for emitting a desired light beam pattern - Google Patents

Light emitting diode components and methods for emitting a desired light beam pattern Download PDF

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Publication number
CN104364904A
CN104364904A CN201280073778.4A CN201280073778A CN104364904A CN 104364904 A CN104364904 A CN 104364904A CN 201280073778 A CN201280073778 A CN 201280073778A CN 104364904 A CN104364904 A CN 104364904A
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Prior art keywords
optical element
photophore
lens
led chip
parts
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Granted
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CN201280073778.4A
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CN104364904B (en
Inventor
关有长
克雷格·威廉·哈汀
朱文岳
莫泰蔺
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Kerui Led Co
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Cree Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/233—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating a spot light distribution, e.g. for substitution of reflector lamps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/0083—Array of reflectors for a cluster of light sources, e.g. arrangement of multiple light sources in one plane
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Abstract

Light emitter components with improved light extraction and related methods are disclosed. In one embodiment, the light emitter component (10) can include a submount (14), at least one light emitting diode chip (12) disposed over the submount (14), and a lens (16) disposed over a portion of the light emitting diode chip (12). The lens (16) can include an optical element (22). The optical element (22) can be configured to affect light output from the at least one light emitting diode chip (12).

Description

For launching light-emitting diode parts and the method for the beam pattern of expectation
Technical field
Content whole disclosed herein relates to light-emitting diode (LED) parts and method.More specifically, the content disclosed herein method that relates to LED element and extract for the light that improves.
Background technology
Light-emitting diode (LED) or LED chip are the solid state device converting electric energy to light.LED chip can be used in photophore parts to provide different light colors and light pattern in various illumination application.Such as, photophore parts can be used in various LED bulb and lamp applications, and develop into the alternative of high-intensity discharge (HID) illumination application that is incandescent, fluorescence and metal halide.
The Conventional luminescent device parts that use in bulb and lamp applications combine (i) and are positioned at discrete LED encapsulation piece on substrate in the form of an array (such as, the LED chip of encapsulation), or (ii) to be positioned on substrate and the LED chip array of compact package under being sealed in single lens.The problem relevant with first method comprises and the time and the cost that are assembled to increase relevant with independent packaging LED chips before on substrate.The easy light of the second method of the LED chip array of compact package is utilized to extract the impact of problem, because adjacent LED chip and/or the bonding wire relevant with adjacent LED chip can stop light.In addition, it is difficult for using single lens to extract beam pattern that is correct or that expect from the LED chip array of compact package.Although another shortcoming relevant with legacy device is non-circular or the array of square shape is first-selected or expects in many application and manufacture process, it is not optimized non-circular or foursquare beam pattern that LED chip array that is non-circular or square shape produces for bulb application.Therefore, the light reducing relevant with discrete the LED encapsulation piece consuming time and step of costliness and improve photophore parts extracts and the beam pattern of photophore parts becomes even more important for maintaining or exceeding to the optical property of the expected cost of limiting-members and expection and expectation.
Although the availability of various photophore parts in the market, still there is the demand to having parts that the efficiency of improvement and light extracts and method.Equally still, there is the beam pattern be simplified be shaped and obtain the parts of beam pattern and the demand of method of expectation from LED chip.
Summary of the invention
According to present disclosure, provide and describe the photophore parts for generation of the beam pattern expected and method herein.The light that element described herein and method can present improvement extracts, and is applicable to various application, such as, comprise the individual of such as bulb and light fixture product and/or application, industry and the illumination application of business.Therefore, object of the present disclosure be to provide on the one hand by the optical cover (optical dome) of location separately from independent LED chip extract light simultaneously from be configured to be different from expectation beam pattern LED chip array produce the beam pattern of intended shape thus improve the photophore parts and method that light extracts.
These and other objects of the present disclosure become apparent by disclosure herein at least fully or partially by content disclosed herein realize.
Accompanying drawing explanation
In the remainder of this specification, in conjunction with more specifically setting forth the comprehensive disclosure with realizing comprising this subject content being optimal mode to those skilled in the art with reference to accompanying drawing, wherein:
Fig. 1 is the top view of the execution mode of photophore parts in light of the disclosure herein;
Fig. 2 A and Fig. 2 B is the top perspective of emitter element in light of the disclosure herein;
Fig. 3 is the end view of emitter element in light of the disclosure herein;
Fig. 4 A to Fig. 4 H is the schematic diagram of photophore parts in light of the disclosure herein;
Fig. 5 A and Fig. 5 B is the sectional view of the part of photophore parts in light of the disclosure herein;
Fig. 6 A to Fig. 6 C is the end view of the LED chip in photophore parts in light of the disclosure herein;
Fig. 7 is the schematic diagram of photophore parts in light of the disclosure herein; And
Fig. 8 A and Fig. 8 B is the perspective view of the illuminating product that can be combined with photophore parts in light of the disclosure herein.
Embodiment
The content disclosed herein light related to for improving extracts light-emitting diode (LED) parts and the method for (comprising the beam pattern such as can with the shape different from the shape of radiative LED chip array or structure).Optical cover and one or more optical element can be used for from difform LED chip array or the beam pattern creating intended shape arranging.Hereinafter will in detail with reference to possible aspect or the execution mode of content herein, one or more example of the present disclosure illustrates in the drawings.Each example is provided to be for explain principals content instead of as restriction.In fact, to illustrate as the part of an execution mode or the feature that describes can be used to another execution mode to produce further execution mode.Be intended to disclosed cover these modifications and variations with the content of imagination.
As shown in each of FIG., for illustrative purposes, some size of structure or part is exaggerated relative to other structures or part and is therefore provided to general structure of the present invention is shown.In addition, with reference to the structure be formed in other structure, part or part, various aspect of the present invention is described.As the skilled person will appreciate, to being formed " " another structure or part " on " or the other structure of reference consideration of structure of " top ", part or both can be mediate.To formed " " another structure or part " on " and do not have intermediate structure or part structure or part reference be described as in this article " directly existing " structure or part " on " formation.Similarly, when element is referred to as " connection ", " attachment " or " coupling " to another element, it directly can connect, is attached or is coupled to another element or can there is intermediary element.On the contrary, when element is referred to as " directly connecting ", " being directly attached " or is " directly coupled " to another element, then there is not intermediary element.
In addition, use in this article such as " on ", " top ", " top ", " top ", " bottom " or " bottom " relative terms the relation of a structure as shown in figure or part and another structure or part is described.To understand, such as " on ", " top ", " top ", " top ", " bottom " or " bottom " relative terms be intended to the different azimuth of the parts comprised except the orientation described in the drawings.Such as, if the parts in figure are reversed, be then described as " " structure of other structure or part " top " or part existing to be positioned to " " other structure or partly " below ".Similarly, if the parts in figure rotate relative to axle, be described to " " structure of other structures or part " top " or part will be oriented to " immediately " other structures or part or " " other structures or " left side " partly.Throughout full text, identical label represents identical element.
There is not one or more element unless expressly stated, otherwise term used herein " comprises ", should be interpreted as " comprising " and " having " the open term of the existence not getting rid of one or more element.
LED chip based on iii-v nitride (such as, gallium nitride (GaN)) or laser can be comprised according to the photophore parts of execution mode described herein.The manufacture of LED chip and laser normally known and only briefly describe in this article.LED chip or laser above can make, such as by the device of the Cree Inc. produce and market in Durham city, the North Carolina state at growth substrate (such as, carborundum (SiC) substrate).Also expect other growth substrate herein, such as but not limited to sapphire, silicon (Si) and GaN.In an aspect, SiC substrate/layer can be 4H polytype of silicon carbide substrate/layer.But, also can use other SiC polytype of silicon carbide substrate/layer, such as 3C, 6H and 15R.Suitable SiC substrate can from the Durham as assignee of the present invention, the Cree company of N.C obtains, and (include, without being limited to U.S. Patent No. Re.34,861 for the production of the method for this substrate in scientific literature and multiple commonly assigned United States Patent (USP); U.S. Patent number No.4,946,547 and U.S. Patent number No.5,200,022) set forth, by incorporated herein by reference for its full content in.Also other suitable growth substrate any is considered herein.
As used in this article, the semiconducting compound formed between one or more elements that term " group III-nitride " refers in the III (being generally aluminium (Al), gallium (Ga) and indium (In)) of nitrogen and the periodic table of elements.This term also refers to binary, ternary and quaternary compound (such as GaN, AlGaN and AlInGaN).III element can be combined to form binary (such as GaN), ternary (such as AlGaN) and quaternary (such as AlInGaN) compound with nitrogen.The empirical formula that the nitrogen that these compounds can have wherein one mole is combined with the III element of mole altogether.Therefore, such as AlxGa1-xN, wherein 1>x>0, be often used in and describe these compounds.Epitaxially grown technology for group III-nitride develops preferably, and reports in appropriate scientific literature.
Although the various execution modes of LED chip disclosed herein can comprise growth substrate, it will be appreciated by those skilled in the art that the crystal epitaxy substrate can removed on it growth and comprise the epitaxial loayer of LED chip, and independently epitaxial loayer can be installed to have the heat different from original substrate, electrically, on the alternative carrier substrate of structure and/or optical characteristics or substrate.Content described herein is not limited to the structure with crystal epitaxy substrate, and can to remove and the structure being bonded to alternative carrier substrate is combined from its initial growth substrate with its epitaxial layers.
Such as, the LED chip based on group III-nitride according to some execution mode of the present invention can at growth substrate (such as, Si, SiC or sapphire substrate) upper making, to provide horizontal device (there are at least two electrical contacts in the same side of LED chip) or vertical devices (there is electrical contact at the opposite side of LED chip).In addition, growth substrate can be retained on LED chip or be removed (such as, by etching, grinding, polishing etc.) after LED chip manufacture.Such as, growth substrate can be removed reduce the thickness of produced LED chip and/or be reduced by forward (forward) voltage of vertical LED chip.Such as, horizontal device (have or do not have growth substrate) can be bonding (such as, use solder) to or the flip-chip that is welded on carrier substrate or printed circuit board (PCB) (PCB).Vertical devices (have or do not have growth substrate) can have solder attach to the first terminal (such as anode or negative electrode) of carrier substrate, installation pad or PCB and the second terminal (such as, relative anode or negative electrode) being welded to carrier substrate, electric component or PCB.The U.S. Patent No. 7 of the Edmond that the example of vertical and horizontal LED chip structure to be issued at the open No.2008/0258130 and 2010 of the U.S. of Bergmann etc. 7, on September etc., 791, discuss by way of example in 061, by incorporated herein by reference for its full content.
One or more LED chip can be coated with one or more fluorophor at least in part.Fluorophor Absorbable rod from LED chip a part of light and launch the light of different wave length, thus photophore parts launch the combination of the light of each from LED chip and fluorophor.In one embodiment, photophore parts launch the photoemissive light being regarded as white light combining generation from LED chip and fluorophor.In one embodiment according to the present invention, the fluorophor that white luminous device parts also can launch the light of yellow wave spectrum again by the LED chip of the light of transmitting blue color spectrum and some blue light of absorption forms.Therefore these parts can launch the white light combination by blue light and gold-tinted.In other embodiments, as in U.S. Patent No. 7,213, describe in 940, LED chip launches the non-white light combination of blue light and gold-tinted.Also consider the LED chip of red-emitting in this article or absorbed LED light and the LED chip of the fluorophor of red-emitting covering.
LED chip can use a lot of diverse ways to be coated with fluorophor, the U.S. Patent Application No. sequence number 11/656 of " Wafer Level Phosphor Coating Method and Devices Fabricated Utilizing Method (wafer level phosphor coating process and the device utilizing the method to make) " is all in topic, 759 and 11/899, describe a kind of suitable method in 790, and by reference both are incorporated into this.Other U.S. Patents Serial numbers 8 being entitled as " Phosphor Coating Systems and Methods for Light Emitting Structures and Packaged Light Emitting Diodes Including Phosphor Coating (the phosphor coated system and method comprising phosphor coated for ray structure and encapsulation LED) " issued on November 15th, 2011 for the appropriate method that is coated with one or more LED chip, 058, in 088 and be entitled as the U.S. Patent Application Serial Number 12/717 of " Systems and Methods for Application of Optical Materials to Optical Elements (for the system and method for optical material to the application of optical element) ", be described in the continuation application of 048, its full content is combined in this by reference.LED chip also can use other method of such as electrophoretic deposition (EPD) to be coated with, as in the U.S. Patent Application Serial Number 11/473 being entitled as " Close Loop Electrophoretic Deposition of Semiconductor Devices (the closed-loop path electrophoretic deposition of semiconductor device) ", the suitable EPD method described in 089, equally by incorporated herein by reference for its full content.Should be understood that the LED chip also can according to photophore parts of the present invention and method with multiple different color, wherein one or more LED chips can transmitting white.
Fig. 1 to Fig. 7 shows according to the photophore parts of this theme that are disclosed herein and that describe and the execution mode of method.Fig. 8 A and Fig. 8 B shows and in conjunction with the illuminating product of the photophore parts according to this theme, can include but not limited to bulb and ligthing paraphernalia (such as, small spotlight, " cover (can) " lamp etc.).Fig. 1 is the vertical view that entirety is appointed as the photophore parts of 10.Fig. 2 A and Fig. 2 B is the top perspective of the execution mode of emitter element, and Fig. 3 is the end view of emitter element.Fig. 2 B is the different execution modes that entirety is appointed as the photophore parts of 15.A difference between emitter element 10 and 15 is the introducing of the one or more middle base station 25 be arranged between one or more LED chip 12 and substrate or base station 14.Photophore parts 10 and 15 can comprise at least one solid-state (solid state) reflector, such as LED chip 12.Photophore parts 10 and 15 can comprise more than one LED chip, such as, two, three or more than the LED chip 12 of three, all LED chips as described in this article.In an aspect, LED chip 12 array can chip on board (CoB) vibrational power flow on substrate or base station 14.Such as, the U.S. Patent No. 821 of the Yuan that CoB structure was issued on October 26th, 2010 etc., be described in 023 and in the U.S. Patent application No.2009/0108281 of the Keller etc. announced on April 30th, 2009, both are by commonly assigned and by reference its full content is combined in this.
LED chip 12 can be arranged to array and/or subarray.Lens 16 can array or subarray be superimposed upon at least one LED chip 12.Array described herein and/or subarray can comprise the LED chip 12 of any amount, to provide the light output of expectation from photophore parts 10 and 15.Such as, photophore parts 10 and 15 can comprise the LED array (such as, see Fig. 4 A to Fig. 4 H) comprising at least 4 LED chips, at least 5 LED chips, at least 6 LED chips, at least 7 LED chips, at least 8 LED chips, at least 9 LED chips, at least 10 LED chips, at least 12 LED chips or at least 20 LED chips.Be fine equally as previously described less array or larger array, such as, photophore parts 10 and 15 also can comprise the array of the LED chip 12 of at least 30,40 or 50 or more.For the object illustrated, 8 LED chips 12 are only shown in Fig. 1 to Fig. 3.
LED chip 12 can comprise any suitable chip size and/or shape (such as square or rectangular shape).In an aspect, LED chip 12 can comprise having and approximates greatly less than 1000 μm sizes (such as, 1000 × 1000 μm 2) or the square chips on larger sized limit.LED chip 12 can comprise and is essentially foursquare chip, has the limit being less than any scope of about 1000 μm or the size of subrange, such as, and about 900 × 900 μm 2chip; About 700 × 700 μm 2chip; About 600 × 600 μm 2chip; About 500 × 500 μm 2chip; About 400 × 400 μm 2chip; About 300 × 300 μm 2chip; About 200 × 200 μm 2chip; Or about 100 × 100 μm 2chip.Multiple LED chip 12 can be used in photophore parts 10 and 15.In an aspect, each LED chip 12 can have identical size.In other side, one or more LED chip 12 can comprise different sizes.LED chip 12 also can comprise the rectangular dies of any suitable dimension.
LED chip 12 as described in this article can comprise be used alone and/or to combine the soild state transmitter used with the light launching shades of colour, color dot or wave-length coverage (being such as mainly white, blueness, blue-green, green, yellow, amber or red light) with fluorophor or luminous element.In an aspect, photophore parts 10 and 15 can comprise one or more LED chip 12 being mainly blueness, wherein when LED chip is illuminated, can excite and be arranged in yellow phosphor on LED chip 12 (such as, fluorophor can directly be arranged in LED chip 12 at least in part and/or be arranged in a part for the photophore parts 10 and 15 on LED chip 12, such as be arranged on lens 16), thus LED chip 12 comprises Lan Zhuanhuang (blue shifted yellow) (BSY) chip.In an alternate embodiment, be mainly red LED chip 12 can be included in emitter element described herein and to can be used alone and/or use with BSY chip portfolio.In an aspect, red LED chips 12 also selectively can be arranged in fluorophor, sealant and/or have below the lens 16 of luminescent coating and produce warm white output with mixing.Photophore parts 10 and 15 can comprise at least one LED chip 12 being configured to excite yellow, redness and/or green phosphor, this phosphor is directly arranged on LED chip 12 and/or is directly arranged in a part for emitter element, such as, yellow, red or green phosphor can arrange lens 16 a part on or in export to produce cold and/or warm white.In further execution mode, parts 10 and 15 can comprise more than one LED chip 12, such as the array of multiple LED chip 12 and/or LED chip 12.Each chip in the array of multiple LED chip 12 or LED chip 12 can comprise approximately identical wavelength (such as, from the select wavelength of identical target wavelength range).In an alternate embodiment, at least the first LED chip 12 of multiple LED chip can comprise the wavelength (such as, at least the first LED chip 12 can from the target wavelength range that be different from least one other LED chip 12 pick out) different from least the second LED chip of multiple LED chip.
Still referring to figs. 1 through Fig. 3 and as mentioned above, one or more LED chip 12 can comprise any required size, structure, structure and/or shape, and can comprise any known LED chip.When the signal of telecommunication or electric current are delivered to emitter element via any suitable surfaces for attachment (such as surfaces for attachment 18), LED chip 12 can be illuminated.Such as, electric current can be delivered to one or more conductor wire (not shown) that can be electrically connected with surfaces for attachment 18 via pad, solder, crimping (crimping) or other attachment method, with by electric current introduction part 10 and 15.Surfaces for attachment 18 can comprise be expressed as "+" and "-" symbol negative electrodes terminal (such as, anode and negative electrode to), and pad, electric connector or the region for the exposure electric conducting material that is electrically connected to external power source (not shown) can be comprised.In an aspect, LED chip 12 comprises following structure: the bottom of chip comprises for anode electric and/or hot linked with the Part I of base station 14, and the top of chip comprises negative electrode bond pad for being electrically connected via the Part II of bonding wire and base station 14 (such as, illustrate in fig. 5 and the vertical devices that describes).In other side, LED chip 12 can comprise following structure: the side of LED chip or a part comprise anode and negative electrode, thus bonding wire can be unnecessary (such as, illustrate in figure 5b and the horizontal device that describes).Also consider the horizontal device comprising anode and negative electrode at the end face of LED chip 12 or a part herein, wherein, negative electrode and anode can be connected to a part (such as, considering to have the horizontal LED chip 12 of two bonding wires herein) for base station 14 by bonding wire respectively.The electric current entering and leave parts 10 and 15 from surfaces for attachment 18 can enter and leave one or more LED chip 12 subsequently, thus chip is illuminated.
Base station 14 can comprise monolithic (monolithic) substrate, such as, printed circuit board (PCB) (PCB), metal-core printed circuit board (MCPCB), based on the dielectric substrate of FR-4 or circuit board, ceramic substrate, laminated substrate, flexible circuit, external circuit or any other suitable base station or the substrate that it can be installed and/or be attached the illuminating device of such as LED chip.Such as, base station 14 can comprise sandwich layer 42 and dielectric layer 44 (see Fig. 5 A and Fig. 5 B).For illustrate object, base station 14 can comprise MCPCB (such as, can by Chanhassan, MN Bergquist company obtain and manufacture those).But any suitable base station 14 can be used.Sandwich layer 42 (Fig. 5 A and Fig. 5 B) can comprise conductive metal layer (such as, copper (Cu) or aluminium (Al)).But dielectric layer 44 (Fig. 5 A and Fig. 5 B) can comprise electric insulation heat conducting material, to help the heat radiation by base station 14.In replaceable execution mode, base station 14 can comprise pottery (such as alumina, aluminium nitride, silicon, sapphire, carborundum) or macromolecular material (such as polyamide, polyester).As Fig. 2 B illustrate further below and and description, parts 15 can comprise and are attached at LED chip 12 on middle base station 25 and lens 16.Middle base station 25 can be attached on base station 14 subsequently.
Base station 14 can comprise the conductive allowing LED chip 12 to be electrically connected with surfaces for attachment 18, thus when parts 10 and 15 receive from the signal of telecommunication of external electrical component (such as conductor wire (not shown)) or electric current, LED chip 12 illuminates.LED chip 12 can use suitable or known attach material and method to be attached to base station 14, such as, solder attachment, be pre-formed attachment, solder flux or fluxless melt altogether attachment, epoxy silicone attachment, metal epoxy attachment, hot compression attachment and/or its combination.In the part that one or more test point 19 can be positioned at base station 14 with test emitter parts 10 and 15 electrically and/or thermal property.Such as, when utilizing any suitable temperature sensor (not shown) to detect, test point 19 can allow the thermal property of test component.
Still referring to figs. 1 through Fig. 3, at least one LED chip 12 can be arranged on base station 14 and lens 16 times.Each lens 16 can comprise lens mount 20, and it can be formed in chip on board (CoB) structure and directly be attached on the surface of one or more base station 14.Lens mount 20 as further described herein also can be attached to base station 14 indirectly.In addition, one or more LED chip 12 can be placed on below each lens 16.In an aspect, each lens 16 can comprise liquid curing silicone material, epoxide resin material or any sealant material (encapsulant material) (such as methyl or phenyl sealant material).Known technique can be used be molded and cured lens material.Lens 16 and lens mount 20 can comprise any suitable shape for generation of the light output expected.Such as, lens 16 can comprise hemisphere (dome) shape as shown with the basic lens mount 20 for circle, or alternately, consider the lens of the base of corresponding other shape any, such as, correspondence is the lens of square, rhombus, ellipse, symmetry and/or asymmetric lens mount 20 substantially.
Lens 16 and lens mount 20 can directly and/or indirectly be formed on the end face of base station 14, and can be arranged at least one LED chip 12.The array of lens 16 can be molded and/or be placed on the array of corresponding LED chip 12.Lens 16 can provide environment to photophore parts 10 and 15 and/or mechanical protection.It should be noted that novel emitter element described herein can be relevant to novel lens 16 and in an aspect can be in conjunction with, such as, each lens 16 can be associated with the one or more novel optical element 22 that entirety is appointed as 22.As further described in this article, each optical element 22 can be the expansion extended from lens 16, or each optical element 22 can be associated with lens 16 and not extend from lens 16 or be attached to lens 16.Optical element 22 can comprise elongated portion or component, such as but be not limited to, integrally can be formed with each lens 16, be individually formed and arrange or can be even the method that both combine with each lens 16.Such as, optical element 22 can comprise at least Part I 24A and selectable Part II 24B, and each part can extend from the part of lens 16 outwards and along lens mount 20.For illustrative purposes, two such parts are shown in the optical element 22 be associated with each lens 16 (such as, first and second part 24A and 24B), but also consider that optical element has more than or is less than the optical element of two parts herein.Such as in an aspect, as shown in Fig. 7 and describe, optical element 22 can comprise the single elongated portion with single serpentine track.
Part I 24A and Part II 24B can comprise roughly along the elongate member that the part of lens mount 20 extends, make the part of their direct contact lens bases 20 or as further describe in this article they and lens mount 20 or LED chip are separated or spaced apart.Each optical element 22 can be structure or the configuration of elongated and spill, is adapted and is configured to as affecting and reverberation in the mode expected of further describing in this article.Can layout angle α between Part I 24A and Part II 24B respectively.In an aspect, angle [alpha] can comprise about 45 ° or larger angle, such as about 50 ° or larger, about 60 ° or larger, about 70 ° or larger or be greater than the angle of 80 °.In other side, angle [alpha] can comprise about 90 ° or larger angle, such as about 95 ° or larger, about 100 ° or larger, about 110 ° or larger, about 120 ° or larger or be greater than the angle of 150 °.
In addition, Part I 24A and Part II 24B can extend over the region of its contact lens base 20, makes one, the diameter of more than one or all optical elements 22 (in an aspect but be not limited to) the comparable lens (such as lens 16) be associated is longer.In other side, Part I 24A and Part II 24B can not extend beyond the region of its contact lens base 20, makes one, the diameter of more than one or all optical elements 22 (in an aspect but be not limited to) the comparable lens (such as lens 16) be associated is shorter.In an aspect, the part 24A of optical element 22 and 24B can extend to the total length longer than the length (such as, the diameter of lens mount 20) of each lens 16 along base station 14.Optical element 22 may extend to about 1mm or longer, about 2mm or longer, about 4mm or longer, about 6mm or longer, about 8mm or longer, about 10mm or longer, or is greater than the length L of about 10mm.In an aspect, optical element 22 may extend to the total length L of about 6.2mm or 6.3mm.Extend and bending component because optical element 22 can comprise, so length L can comprise the measurement of the actual range between Part I 24A as shown and the end of Part II 24B, instead of whole length of a curve.It is circular lens mount 20 that lens 16 can comprise basic, and this lens mount has and is less than about 2mm (such as, 0.5mm or 1mm), about 2mm or longer, about 3mm or longer, about 4mm or longer or be greater than the diameter of about 5mm.In an aspect, lens 16 comprise the diameter of about 4.5mm.Consider the length L of lens diameter (such as, the diameter of lens mount 20) and any combination of length herein.
Part I 24A and Part II 24B can comprise as shown substantially identical length, or one of Part I 24A and Part II 24B are comparable, and another is longer.It is symmetrical component (such as, relative lens 16 is placed symmetrically) that Part I 24A and Part II 24B can comprise basic, its can but not necessarily relative lens 16 form mirror image.Consider asymmetric, the non-mirror-image arrangement of Part I 24A and Part II 24B equally in this article.Optical element 22 directly can be arranged to contiguous lens 16 and can be positioned such that each optical element 22 is also arranged to vicinity or the edge close to base station 14 in adjoining position.In an aspect, each optical element 22 can be arranged between the edge of LED chip 12 and base station 14.
Should note, the Part I 24A of optical element 22 and Part II 24B can comprise general curved, that protrude or recessed part, it can bend slightly to interior with the configuration being substantially C shape as shown toward each other, or alternately can bend along any direction or orientation the light output producing any expectation.In an aspect, one or more optical element 22 tangentially can align relative to lens 16, makes a bit or at least partially to locate contact lens base 20 at it.Optical element 22 can but not necessarily contact lens base 20.In further execution mode, each optical element 22 can contact associated with it and corresponding lens mount 20 at more than one point or part place.Part I 24A and Part II 24B can offset (offset) angle θ from the position of the tangential contact lens 16 of optical element 22 or lens mount 20.That is, Part I 24A and Part II 24B can relative to the lens mount shape of circle at an angle.In an aspect, Part I 24A and Part II 24B can from position skew about 2 degree or the larger angle θ of the tangential contact lens base 20 of optical element 22.In other side, lens component 24A and 24B can from the position skew of the tangential contact lens base 20 of optical element 22 about 5 ° or larger, about 10 ° or larger, about 15 ° or larger, about 25 ° or larger, about 30 ° or larger, about 45 ° or larger or be greater than the angle θ of 45 °.In some aspects, optical element 22 can from the position skew of the tangential contact lens base 20 of optical element 22 up to any angle θ comprising about 90 °.
Still referring to figs. 1 through Fig. 3, one or more part (such as Part I 24A and Part II 24B) integrally can be formed with lens 16, such as, is formed via identical mould and/or in the molding process identical with lens 16.That is, formed hemispherical lens 16 mould can with for the formation of the mould of optical element 22 or mould part integrated.In other side, Part I 24A and Part II 24B can be individually formed with lens 16 (such as, being formed via different moulds and/or in different molding process).In an aspect, each optical element 22 can comprise the material identical with lens 16, such as, moulds system with selectable solidification of silicon resin material.In other side, each optical element 22 can comprise the material being different from lens 16, such as, and glass or plastic material.Each lens 16 and optical element 22 can comprise optically transparent material.In other side, a part for lens 16 and optical element 22 can comprise and to be coated with or lamination has the trnaslucent materials of one or more fluorophor or luminous element layer, and/or comprises opaque material.As shown in Figure 3, Part I 24A and Part II 24B can comprise basic is semicircle or bending cross sectional shape and the upper surface of circle.
Optical element 22 advantageously can improve light individually and jointly and extract, such as, by producing circular beam pattern from non-circular LED chip array (such as CoB array or non-CoB array), or by producing the beam pattern of any intended shape from the LED chip array of the configuration being arranged to the beam pattern being different from expectation.As previously discussed, a shortcoming of traditional element is that square or non-circular LED chip array can produce square or non-circular light beam.Can more save time because to compare with the tube core of square array configuration (die) attachment the array producing other shape with bonding wire LED chip, so can be such as favourable by what use optical element 22 to produce the novelty of circular beam pattern with the method for simplification.As illustrate in this article and describe by conjunction with novel optical element 22, the LED chip 12 being configured to or being arranged as square or non-circular array advantageously improves light output by producing the circular beam pattern being suitable for bulb or lamp applications.Such as, one or more optical element 22 can be arranged on base station 14, to launch the meeting circular light beam that toroidal produces reality from the quadrate array of LED chip 12 by handling light.As further described herein, the beam pattern of other shape and other LED chip structure are also fine.
In an aspect, the Part I 24A of optical element 22 and Part II 24B handles from optical element 22 reflection the light beam launched by LED chip 12 by making light, make the light pattern of generation consistent with circular portion 24A and 24B, jointly to form the circular light beam of essence between relative optical element 22.It should be noted that optical element 22 makes the LED chip 12 of quadrate array can produce circular light beam in-between.Because can arrange near the LED chip array of any shape that optical element 22 is to produce the light beam of any intended shape, so the beam pattern of any intended shape can be produced from the LED chip array being arranged to the structure being different from expectation beam pattern.Optical element 22 can be arranged such that they outside LED chip array (such as, along the external margin of the array of LED chip 12) between LED chip 12 and the outermost edges of base station 14.
Fig. 2 B shows the photophore parts 15 with more than one base station.At least one LED chip 12, lens 16 and optical element 22 can with CoB structure or CoB arranged in arrays on middle base stations 25.In an aspect, each LED chip 12, lens 16 and optical element 22 in the array of chip 12, lens 16 and element 22 can be arranged in one or more middle base station 25 multiple on.As shown, one or more middle base station 25 can be spaced apart, and the optical element 22 alignd with the selectivity helped for optical element 22 rotates about the selectivity of arrow A.Each middle base station 25 can comprise single led chip 12, single lens 16 and single optical element 22, or more than one LED chip 12, more than one lens 16 and more than one optical element 22.The middle comparable compartment of terrain illustrated in the drawings of base station 25 closer to or than shown in further separation.
Lens 16 and optical element directly can be attached on middle base station 25 with CoB array.Middle base station 25 can comprise any material, and can optionally conduct electricity and/or Heat Conduction Material.In an aspect, middle base station 25 composite material that can comprise metal, pottery, polymer or can be used alone and/or use with other combination of materials.Middle base station 25 can comprise monolayer material or more than the material of one deck and/or the laminar structure that is made up of one or more layers metal, pottery, dielectric and/or polymeric material.Photophore parts 15 can comprise single base station 14, and this base station 14 also has the region between part that wherein one or more middle base stations 25 can be arranged in LED chip 12 and base station 14 except the region that LED chip 12 as in parts 10 is installed on base station 14.In other side, element 15 can comprise and has the single base station 14 that base station 25 is disposed thereon in the middle of n altogether, and wherein, n equals the quantity of LED chip 12.Therefore, n middle base station 25 can be arranged in altogether between n LED chip 12 and single monolithic base station 14 altogether.Further, in the middle of single monolithic, base station 25 can have multiple LED chips 12 (such as, the array of LED chip 12) disposed thereon, and it can be arranged on single monolithic base station 14 conversely.Consider any suitable configuration herein.
In an aspect, middle base station 25 can comprise the monolithic base station be arranged on base station 14.Middle base station 25 via any suitable binding material or layered product attachment or can be bonded to base station 14.As illustrated by arrow A in fig. 2b, one or more middle base station 25 can be configured to rotate or any position of being fitted on base station 14, thus optical element 22 location selectively or be configured in the orientation of any expectation on base station 14.Wherein, employ more than one middle base station 25, base station 25 can comprise any shape.Each middle base station 25 can comprise identical shape, or base station 25 can be different shape.For illustrative purposes, show the basic middle base station 25 for square shape, but, also consider other shape any (such as basic is circle, rectangle, symmetrical and/or asymmetric shape) in this article.Middle base station 25 can still not necessarily be of similar shape.Such as, in parts 15, on base station 14, may be combined with the difform middle base station 25 of use.
Photophore parts 10 and 15 can comprise at least one opening or the hole that entirety is appointed as 26 further, and it can be arranged to through or pass base station 14 at least in part, to help parts to be attached to external substrate or surface.Such as, one or more attachment component (such as screw) inserts by least one hole 26, so that photophore parts 10 and 15 are fixed to another component, structure or substrate.In an aspect, as shown in Fig. 8 A and 8B, photophore parts 10 and 15 can be fixed to the surface of bulb or lamp applications by one or more attachment component.
Fig. 4 A to Fig. 4 H shows the placement of the various LED chips on base station 14 and the shape of LED chip array and subarray, and wherein, optical element 22 can be used for carrying out shaping to light.Thus, the light that beam shaping is arranged in the light between relative optical element 22 desired structure 30 (such as circular light beam) by producing Central places substantially advantageously improves photophore parts 10 and 15 extracts, thus the light improving photophore parts 10 and 15 by making it be more suitable for bulb or lamp applications extracts and luminous.In an aspect, photophore parts 10 and 15 can comprise the optical element 22 for producing the light beam of any intended shape from the LED chip array of any intended shape.Such as, in Figure 4 A, numeral 1 to 8 schematically shows eight LED chips placing or be arranged to quadrate array.It is neighbouring (such as that optical element 22 (Fig. 1 to Fig. 3) can be arranged in array, between the edge of LED chip and base station 14), with by bend from the part (it is relative to the partial offset angle θ of lens 16) of optical element 22, bending and/or reverberation is basically produce round-shaped beam pattern or light beam 30 array of square shape.Beam pattern also can by the impact (see Fig. 1 to Fig. 3) of the angle [alpha] between Part I 24A and Part II 24B.For each of the one or more optical elements 22 arranged near LED chip array, angle [alpha] can be identical, or at least the first angle [alpha] of the first optical element 22 of multiple optical element can be different from least the second angle [alpha] of the second optical element 22 of multiple optical element.LED chip array can be arranged on square base station 14.But, consider other shape any of base station 14 herein.Such as, dotted line 28 in Figure 4 A schematically shows the circular base station that can use in this article.
Fig. 4 B shows the layout of two LED chips.Numeral 1 and 2 corresponds to two LED chips, and wherein, optical element 22 (Fig. 1 to Fig. 3) can be arranged near LED and for producing the basic light beam 30 for circular configuration from the non-circular arrangement of LED chip.Arrow in Fig. 4 B, Fig. 4 C and Fig. 4 E to Fig. 4 G represents the possible position of the part (such as, part 24A and 24B) of optical element 22, bending and/or orientation.Such as, in figure 4b, optical element 22 (Fig. 1) can comprise the part that extends in length along arrow and/or have angle to produce circular light beam 30 from the LED chip of non-circular arrangement as becoming shown in by arrow.In addition, optical element 22 (Fig. 1) can comprise the bending part as represented by arrow, to produce circular light beam 30 from the LED chip of non-circular arrangement.The part (24A and 24B such as, in Fig. 1) of optical element 22 can have equal length or different length.Angle [alpha] (Fig. 1) between the part of the optical element 22 near LED chip 1 also can be different from the angle [alpha] of the optical element be positioned near LED chip 2.
Fig. 4 C shows triangular arrangement or the array of LED chip.Numeral 1 to 3 corresponds to three LED chips that can be arranged to the LED array be generally triangular, and wherein optical element 22 (Fig. 1 to Fig. 3) can be arranged near LED, and for producing circular light beam 30 from non-circular array.As illustrated by arrow, the optical element 22 (Fig. 1) be positioned near LED 2 and LED 3 can have longer part (such as, as illustrated by longer arrow) in one direction to provide circular light structure or wave beam.Fig. 4 D shows the quadrate array of at least four LED chips that can be arranged on base station 14, and wherein optical element 22 (Fig. 1 to Fig. 3) can be used for producing circular light beam 30.Similarly, Fig. 4 E to Fig. 4 H shows with the layout of five, six and seven LED chips of various non circular shape arrangement on base station 14 or array, and wherein optical element 22 (Fig. 1 to Fig. 3) can be used for the circular configuration or the wave beam 30 that produce light.The various placement of the LED chip in each array shown in Fig. 4 A to Fig. 4 H or layout represent that the different optical element 22 (Fig. 1) be positioned near different corresponding LED chips can comprise different angle [alpha] (such as, not all angle is identical), to produce circular beam from non-circular array, or produce the wave beam of other intended shape any.Such as, the LED chip (LED 1 such as, in Fig. 4 E) of corner can have and another LED chip (LED4 such as, in Fig. 4 E) differently angled optical element 22, jointly to produce circular light beam, or the light of any intended shape.
Fig. 4 G shows two subarrays of LED chip, such as, and the second subarray of the first subarray of the LED chip of corresponding numeral 1 to 3 and the chip of corresponding numeral 4 to 6.Each subarray subarray can comprise the shape be generally triangular, and the global shape of LED chip 1 to 6 comprises non-circular elongate hexagonal shape.Consider that optical element 22 (Fig. 1 to Fig. 3) can be used for producing circular light beam 30 from any non-circular shape or array of LED chip in this article.Optical element 22 (Fig. 1 to Fig. 3) can be used for the one or more bending part reverberation from having curved surface, produces light or the light beam 30 of circular configuration thus from the array of any asymmetric or asymmetric shape of the array of any symmetric shape of LED chip and/or LED chip.As Fig. 4 A to Fig. 4 H illustrates, LED chip can be arranged to the first shape or the first array structure, and the light beam 30 jointly exported from LED chip array can comprise the second shape or beam pattern, and wherein, the second shape or beam pattern are different from the first shape or the first array structure.
Fig. 5 A and Fig. 5 B shows the sectional view of the part of the photophore parts intercepted along the line 5A/5B-5A/5B in Fig. 1.Fig. 5 A is the part that entirety is appointed as the photophore parts of 40.Base station 14 can comprise single substrate, and single substrate has for carrying currents and the multiple interior layer spread from the heat of emitter element or circuit.In an aspect, base station 14 can comprise the sandwich layer 42 (such as, the metal level of such as Cu or Al) of conduction and/or heat conduction.Base station 14 can comprise dielectric layer 36 further, but it can electric insulation heat conduction, dispels the heat to help base station 14.Base station 14 can comprise the conductive mounting surface 46 or layer that one or more LED chip 12 can be attached thereon via known die attach technique and/or material further.In an aspect, mounting surface 46 comprises Cu layer or Cu region, such as Cu electrodeposited coating or Cu layers of foil.LED chip 12 can be electrically connected with electric trace (electrical trace) 48.Electric trace 48 can comprise Cu layer or Cu paper tinsel.Base station 14 can be further and selectablely comprise one or more layers solder resist material 50 (its can be white with the light of reflection from parts 40).In an aspect, LED chip 12 can be electrically connected via the exposed region of bonding wire 52 with electric trace 48.Conductive mounting surface 46 and electric trace 48 can be electrically connected with at least one surfaces for attachment 18 (Fig. 1), and the current delivery from external power source are illuminated to LED chip 12 to make it.
Fig. 5 A illustrates the placement of LED chip 12 relative to lens 16 further.Such as and in an aspect, lens 16 can comprise the center line C at the center of corresponding LED chip 12 substantially.Center line C can but differ and be decided to be the maximum height of lens 16.Namely lens 16 can comprise is not hemispheric cross sectional shape, and can have the height of disalignment C.When Central places is arranged in below lens 16 LED chip 12 substantially, maximizing light extracts, but as Fig. 6 A illustrates, LED chip 12 can disalignment C and/or more than one chip 12 can be arranged in below lens 16.As previously described, lens 16 can comprise the lens mount 20 that directly can be attached to base station, make LED chip 12 and lens 16 comprise CoB structure.It is cheese or hemispheric shape that lens 16 can comprise basic, and can be corresponding with the lens mount of circle.
Fig. 5 B shows the part that entirety is appointed as the photophore parts of 60.Parts 60 can comprise the LED chip 62 with horizontal tectonics, and wherein the bottom of LED chip 62 comprises anode for being electrically connected with more than one conductive mounting surface 46 and negative electrode.Meanwhile, conductive mounting surface 46 can comprise the positive pole/negative electrode pair that can be electrically connected with corresponding positive pole/negative electrode surfaces for attachment 18 (see Fig. 1, not shown).Electric current can be delivered to parts 60 from external power source (not shown) via surfaces for attachment 18 (Fig. 1).Surfaces for attachment 18 (Fig. 1) can be electrically connected along the internal electrically conductive layer be arranged in base station 14 or path and conductive mounting surface 46.
Fig. 5 B also show the placement of LED chip 62, and LED chip 62 can be arranged relative to the center line C Central places of lens 16.Such as, LED chip 12 can be arranged in diverse location place relative to lens 16, such as the below (wherein lens 16 are in maximum height) of the center line C of about lens 16.The center C of lens 16 can but not necessarily identical with the summit of lens 16 or maximum height point.Parts described herein can comprise multiple optical lens 16, and wherein, each lens 16 are placed at least one LED chip 12 of the array of LED chip 12.Can have n lens 16 altogether, wherein, n equals the quantity of the LED chip 12 in array.Alternatively, the quantity of lens n can be less than the quantity of the LED chip 12 in array.Such as, can consider that one or more LED chip 12 can not be positioned under lens 16.In this case, the quantity of lens n is less than the quantity of LED chip 12.Equally in this case, optical element 22 (Fig. 1) can between unlapped LED chip 12 and the outermost edge of base station 14.
Fig. 6 A more than one LED chip 12 shown wherein as specified by chip 12 with dotted line can be positioned at the photophore parts 70 below lens 16.At this, provide only a LED chip 12, chip 12 can be positioned at below lens 16 along by the arbitrary orientation shown in solid line and dotted line equally.Such as, at this, only seal a LED chip 12 in each hemisphere or lens 16, this LED chip 12 can depart from center and place, to make peak emission characteristic deviation when needed relative to center line C such as shown in broken lines.The luminous pattern of single led chip 12 also can or offset further by optical element 22 and the Part I 24A of optical element 22 and the position of Part II 24B and/or angle.As previously described, optical element 22 can be arranged between the external margin of LED chip 12 and base station 14, makes light beam can towards the center of base station 14 to internal reflection, to produce the circular light beam being suitable for the application of bulb, light fixture or other illuminating product.
As Fig. 6 A to Fig. 6 C illustrates, optical element 22 can comprise the height H of the thickness being approximately equal to, or greater than LED chip 12.For illustrative object, optical element 22 is shown as the height H with the thickness being greater than LED chip 12; But if desired, height H also can equal the thickness of chip substantially.The optical element 22 with height H is by integrally inwardly the light output that affects from LED chip 12 of the off-centring of base station 14 or reverberation is basic for similar round or round-shaped beam pattern to help to produce.It should be noted that the light with circular beam pattern can produce from non-round LED chip array 12.In addition, according to parts described herein and lens, the light with any beam pattern shape can be produced from the LED chip array of any shape.Such as, LED chip array can comprise the first shape, and light beam can comprise the second shape, and wherein, the first shape is not identical with the second shape.
Fig. 6 B shows another execution mode that entirety is appointed as the photophore parts of 80.In this embodiment, LED chip 12 can be arranged on the first base station 82 of not extension below optical element 22.Such as, the first base station 82 can comprise the main body of LED encapsulation piece, and LED chip 12 array is formed by discrete LED encapsulation piece instead of CoB structure.In one embodiment, LED chip 12 can be installed to the first base station 82, first base station 82 and can be installed to conversely on base station 14, thus LED chip 12 is arranged on base station 14 indirectly.In an aspect, the first base station 82 can comprise any suitable material, and can be conduction and/or heat conduction or non-conductive and/or non-conductive.In an aspect, the first base station 82 can comprise and has inner fin and the plastic body of electric component for physically, electrically communicating with heat with a part for base station 14.In other side, first base station 82 can comprise ceramic material, such as LTCC (LTCC) material, High Temperature Co Fired Ceramic (HTCC) material, alumina, aluminium nitride (AlN), aluminium oxide (Al2O3), glass and/or aluminium sheet material.In other side, the first base station 82 can comprise plastic material, such as polyimides (PI), polyamide (PA), polyphthalamide (PPA), liquid crystal polymer (LCP) or silicones.First base station 82 can comprise any suitable size and/or shape, such as, is square, rectangle, circle, ellipse, rule, irregular or asymmetrical shape substantially.LED chip 12 can use any suitable material and/or technology (such as, solder attachment, pre-formed attachment, solder flux or fluxless melt attachment, epoxy silicone attachment, metal epoxy attachment, hot compression attachment and/or its combination altogether) carry out die attach, to be directly electrically connected the LED chip 12 in packaging part.
Fig. 6 C shows another execution mode of photophore parts 85.As shown in Figure 6 C, as previously illustrated in fig. 2b and described, LED chip 12, lens 16 and optical element 22 can be arranged on middle base station 25.In an aspect, lens 16 can directly be attached to middle base station 25 with CoB array.Middle base station 25 can comprise any conduction and/or Heat Conduction Material.Middle base station 25 equally also can comprise non-conductive or non-conducting material.Middle base station 25 can allow optionally to locate one or more optical element 22, to produce beam pattern or the shape of expectation.
Fig. 7 is the schematic diagram that entirety is appointed as the photophore parts of 90.In this embodiment, can more clearly distinguish with the position of the optical element 22 of round-shaped beam pattern P relative to the center arrangement be represented by dotted lines, because lens 16 are removed, make " track (footprint) " that can find out optical element 22.Optical element 22 can as shown and lens 16 be spaced apart and/or use when not having lens 16.As shown, the bending of optical element 22 can by the inwardly center throw of base station 14 or the reflection of the light from LED chip 12, produces the basic beam pattern P for similar round or circle being suitable for bulb and/or lamp applications thus.Can expect, optical element 22 also can be arranged so that beam pattern can produce departing from the region of center or non-central layout on base station 14 (such as, from the edge of parts 90, turning or side produce light).As shown in Figure 7, round-shaped beam pattern P can produce from the basic array (not shown) for foursquare lens 16 (it comprises the optical element 22 extended from it).Optical element 22 can directly extend (not shown) from lens 16 and/or separate (shown in foregoing figures) with lens 16.When optical element 22 separates with lens 16, optical element 22 can be arranged between corresponding lens 16 and the outermost edge of base station 14, and between corresponding LED chip 12 (not shown) and the outermost edge of base station 14.
Element described herein can comprise any suitable size.In an aspect, base station 14 can comprise wherein each limit and is approximately the square of 50mm or less.In other side, base station 14 can comprise wherein each limit and be approximately the square of 25mm or less.Further, base station 14 can comprise wherein each limit and be approximately the square of 10mm or less.Consider the base station 14 of rectangle and circle shape equally in this article.Base station 14 can comprise any suitable thickness, and such as, base station 14 can comprise about 5mm or less, about 1mm or less or be less than the thickness of about 1mm.The array of LED chip 12 can comprise the LED chip 12 separated with arbitrary interval, such as, LED chip 12 can be spaced apart about 20mm or less, about 10mm or less, about 7mm or less, about 5mm or less or be less than 5mm, and can be depending on the size of LED chip.
Fig. 8 A and Fig. 8 B show can in conjunction with photophore parts 10,15 and any other as the luminous product of the execution mode illustrated herein and describe.Consider luminescence application and the product of any amount; Be only illustrative purposes instead of as restriction, show entirety be appointed as 100 bulb and overall be appointed as 110 ligthing paraphernalia.As Fig. 8 A, show in phantom photophore parts 10 and can be combined in LED bulb 100.Such as, base station 14 can be arranged on retaining member 102 in bulb 100 or radiating component.In an aspect, base station 14 can be fixed or make to be screwed on retaining member 102.As previously described, emitter element 10 can comprise the array being arranged in the one or more LED chips 12 on base station 14 with quadrate array (Fig. 1).Each LED chip 12 (Fig. 1) can be arranged in below lens 16, and lens 16 have and to be directly attached with CoB structure and to be arranged in the lens mount 20 (Fig. 1) on base station 14.Such as, advantageously can minimize die attach and bonding wire step with the LED chip 12 (Fig. 1) that quadrate array is arranged, but not be optimized for bulb application from the conventional beam pattern that quadrate array is launched.Should note, the parts comprising novel optical element 22 described herein can produce predetermined beam pattern, such as can be more suitable for the circular beam pattern of some luminous application, and the light that advantageously can improve LED luminaire (such as bulb 100) is launched.
Same, Fig. 8 B shows the ligthing paraphernalia 110 in conjunction with photophore parts 10.Ligthing paraphernalia 110 can be included in individual, business with industrial light application in use small spotlight or " cover " lamp.Photophore parts 10 can be arranged on installation base plate or surface 112, and one or more optical elements 22 that can be outside via the non-circular array (Fig. 1) being arranged in LED chip 12 (it is arranged in the below of respective lens 16) advantageously produce the round-shaped beam pattern of improvement.
Shown in the figure and above-described embodiment of the present disclosure is the example of the multiple execution modes that can make within the scope of the appended claims.Can consider, the photophore parts of the novelty that the light with improvement extracts and the method making it can comprise except various configurations except concrete those disclosed.Can consider equally, the lens of novelty of the beam pattern for providing the light of improvement to extract and to expect disclosed herein can comprise equally except various configurations except concrete those disclosed.

Claims (58)

1. photophore parts, comprising:
Base station;
At least one luminescence chip, is arranged on described base station;
Lens, are arranged at least one luminescence chip described; And
Optical element, is associated with described lens, and wherein, described optical element is configured to affect the light output from described luminescence chip.
2. photophore parts according to claim 1, wherein, described optical element is elongated and comprises the length of the diameter being greater than described lens.
3. photophore parts according to claim 1, wherein, described optical element comprises about 4 millimeters (mm) or longer length.
4. photophore parts according to claim 1, wherein, described optical element comprises about 6 millimeters (mm) or longer length.
5. photophore parts according to claim 1, wherein, described optical element comprises the first elongated portion and the second elongated portion.
6. photophore parts according to claim 5, wherein, described first elongated portion and described second elongated portion inwardly bend each other.
7., wherein, between described first elongated portion and described second elongated portion, there is about 90 ° or larger angle in photophore parts according to claim 6.
8., wherein, between described first elongated portion and described second elongated portion, there is about 100 ° or larger angle in photophore parts according to claim 7.
9., wherein, between described first elongated portion and described second elongated portion, there is about 120 ° or larger angle in photophore parts according to claim 7.
10. photophore parts according to claim 1, wherein, described optical element contacts described lens at least partially.
11. photophore parts according to claim 1, wherein, described optical element comprises molded silicone material.
12. photophore parts according to claim 1, wherein, described optical element comprises plastic material.
13. photophore parts according to claim 1, wherein, at least one luminescence chip described comprises at least one light-emitting diode (LED) chip.
14. photophore parts according to claim 13, wherein, described optical element comprises the height of the thickness being greater than at least one LED chip described.
15. photophore parts according to claim 14, wherein, at least one LED chip described comprises LED chip array.
16. photophore parts according to claim 15, wherein, described LED chip array comprises the LED chip array of non-circular shape.
17. photophore parts according to claim 16, wherein, described LED chip array comprises the LED chip array of square shape.
18. photophore parts according to claim 17, comprise multiple optical element, and wherein, described optical element is configured to the light output of impact from the LED chip array of described square shape to produce round-shaped beam pattern.
19. photophore parts according to claim 1, wherein, described luminescence chip is installed on described base station with chip on board (CoB) structure.
20. photophore parts according to claim 1, wherein, described luminescence chip is installed on described base station indirectly.
21. 1 kinds of bulbs, in conjunction with photophore parts according to claim 1.
22. 1 kinds of light fixtures, in conjunction with photophore parts according to claim 1.
23. 1 kinds of methods that photophore parts are set, described method comprises:
Base station is set;
At least one luminescence chip is attached to the surface of described base station;
At least one luminescence chip described arranges lens; And
Arrange and be configured to affect the optical element from the light output of described luminescence chip.
24. methods according to claim 23, comprise the elongated optical element arranging and have the length of the diameter being greater than described lens.
25. methods according to claim 23, comprise the described optical element that setting has about 4 millimeters (mm) or longer length.
26. methods according to claim 23, wherein, described optical element contacts described lens at least partially.
27. methods according to claim 23, wherein, described optical element has the first elongated portion and the second elongated portion.
28. methods according to claim 27, comprise and arrange wherein said first elongated portion relative to described second sweep described optical element at an angle.
29. methods according to claim 28, wherein, the angle ranging from about 90 ° or larger.
30. methods according to claim 28, wherein, the angle ranging from about 100 ° or larger.
31. methods according to claim 28, wherein, the angle ranging from about 120 ° or larger.
32. methods according to claim 23, wherein, arrange described lens and comprise and be molded described lens and described optical element from liquid curing silicone material, epoxide resin material or sealant material.
33. methods according to claim 23, wherein, arrange at least one luminescence chip described and comprise and arrange at least one light-emitting diode (LED) chip.
34. methods according to claim 33, comprise the described optical element arranging the height with the thickness being greater than at least one LED chip described.
35. methods according to claim 33, wherein, arrange at least one LED chip and comprise and arrange LED chip array.
36. methods according to claim 35, wherein, arrange described LED chip array and comprise the LED chip array arranging non-circular shape.
37. methods according to claim 36, wherein, arrange described LED chip array and comprise the LED chip array arranging square shape.
38. according to method according to claim 37, comprise multiple described optical element further, and by reflecting from described multiple optical element the light launched by described LED chip, producing at least basic from the LED chip array of described square shape is round-shaped beam pattern.
39. 1 kinds of lens, comprising:
Lens mount, has diameter;
Elongated optical element, extends from described lens mount; And
Described elongated optical element has the length of the described diameter being greater than described lens mount.
40. according to lens according to claim 39, and wherein, the described length of described optical element is about 4 millimeters (mm) or longer.
41. according to lens according to claim 39, and wherein, the described length of described optical element is about 6 millimeters (mm) or longer.
42. according to lens according to claim 39, and wherein, described optical element comprises the first elongated portion and the second elongated portion.
43. lens according to claim 42, wherein, described first elongated portion and described second elongated portion inwardly bend each other.
, wherein, between described first elongated portion and described second elongated portion, there is about 90 ° or larger angle in 44. lens according to claim 42.
45. according to lens according to claim 39, and wherein, described optical element comprises molded silicone material.
46. according to lens according to claim 39, and wherein, described optical element comprises plastic material.
47. 1 kinds of photophore parts, comprise according to lens according to claim 39, and wherein, described lens layout is at least one light-emitting diode (LED) chip.
48. photophore parts according to claim 47, wherein, described optical element comprises the height of the thickness being greater than at least one LED chip described.
49. 1 kinds of photophore parts, comprising:
Base station;
Luminescence chip array, be arranged on described base station, described array is arranged with the first array structure;
Lens, are arranged on described luminescence chip; And
Optical element, is associated with described lens, and is configured to affect the light output from described luminescence chip, so that with the shape transmitted beam pattern being different from described first array structure.
50. photophore parts according to claim 49, wherein, described first array structure is non-circular.
51. photophore parts according to claim 50, wherein, described beam pattern is circular substantially.
52. photophore parts according to claim 49, wherein, each described optical element comprises Part I and Part II.
53. photophore parts according to claim 52, wherein, described Part I relative to described Part II at an angle.
54. photophore parts according to claim 49, wherein, described optical element is elongated and bending.
55. photophore parts according to claim 49, wherein, described optical element is arranged in the middle base station of locating described optical element for selectivity.
56. 1 kinds for producing the method for the beam pattern of expectation from photophore parts, described method comprises:
Arrange photophore parts, described photophore parts comprise:
Base station;
Luminescence chip array, be arranged on described base station, described array is arranged with the first array structure;
Lens, are arranged on described luminescence chip; And
Optical element, is associated with described lens; And
From described luminescence chip array to be different from the beam pattern utilizing emitted light of described first array structure.
57. methods according to claim 56, comprise and optionally locate one or more described optical element to produce described beam pattern.
58. methods according to claim 56, wherein, described first array structure is foursquare and described beam pattern is substantially circular substantially.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111052422A (en) * 2017-09-01 2020-04-21 科锐公司 Light emitting diodes, components and related methods

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018065364A1 (en) * 2016-10-04 2018-04-12 Philips Lighting Holding B.V. Luminaire with spatially separated solid state lighting elements

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080258130A1 (en) * 2007-04-23 2008-10-23 Bergmann Michael J Beveled LED Chip with Transparent Substrate
CN102132088A (en) * 2008-06-13 2011-07-20 飞利浦电子公司 Orientable lens for led fixture
CN102216677A (en) * 2008-09-16 2011-10-12 马斯科公司 Method, system and apparatus for highly controlled light distribution from light fixture using multiple light sources (led's)
JP2012009632A (en) * 2010-06-25 2012-01-12 Panasonic Electric Works Co Ltd Light-emitting element package and light-emitting element package group with light-emitting element package

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
US7791061B2 (en) 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
US7821023B2 (en) 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
JP2007142200A (en) * 2005-11-18 2007-06-07 Matsushita Electric Ind Co Ltd Light emitting module
US7213940B1 (en) 2005-12-21 2007-05-08 Led Lighting Fixtures, Inc. Lighting device and lighting method
US8058088B2 (en) 2008-01-15 2011-11-15 Cree, Inc. Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating
KR101065003B1 (en) * 2009-08-25 2011-09-16 (주)알텍테크놀로지스 Lighting module
CN102135239B (en) * 2010-01-21 2013-01-23 财团法人工业技术研究院 Lighting device and optical element modules thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080258130A1 (en) * 2007-04-23 2008-10-23 Bergmann Michael J Beveled LED Chip with Transparent Substrate
CN102132088A (en) * 2008-06-13 2011-07-20 飞利浦电子公司 Orientable lens for led fixture
CN102216677A (en) * 2008-09-16 2011-10-12 马斯科公司 Method, system and apparatus for highly controlled light distribution from light fixture using multiple light sources (led's)
JP2012009632A (en) * 2010-06-25 2012-01-12 Panasonic Electric Works Co Ltd Light-emitting element package and light-emitting element package group with light-emitting element package

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111052422A (en) * 2017-09-01 2020-04-21 科锐公司 Light emitting diodes, components and related methods
CN111052422B (en) * 2017-09-01 2023-10-31 科锐Led公司 Method for manufacturing light-emitting diode device

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