CN104362773A - Wireless electric energy transmitting device - Google Patents
Wireless electric energy transmitting device Download PDFInfo
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- CN104362773A CN104362773A CN201410697727.XA CN201410697727A CN104362773A CN 104362773 A CN104362773 A CN 104362773A CN 201410697727 A CN201410697727 A CN 201410697727A CN 104362773 A CN104362773 A CN 104362773A
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Abstract
The invention discloses a wireless electric energy transmitting device. The wireless electric energy transmitting device comprises a single-chip microcomputer control circuit, an IR2111 half-bridge driving module connected with the output end of the single-chip microcomputer control circuit, a transmitting coil connected with the output end of the IR2111 half-bridge driving module, a current sampling module used for conducting sampling on the transmitting coil and feeding sampling information back to the single-chip microcomputer control circuit, and an electric energy receiving circuit used in cooperation with the transmitting coil. According to the wireless electric energy transmitting device, the system circuits are simple, the device is easy to obtain, cost is low, operation is stable and reliable, and practical value is extremely high.
Description
Technical field
The present invention relates to a kind of transmitting device, specifically, relate to wireless electric energy transmission device.
Background technology
Wireless radio transmission is very extensive in society application, relates to all trades and professions of society, all has very great impact to the daily life of the people and socioeconomic development.But existing wireless electric energy transmission device often exists system complex, the problem that cost is high, maintenance difficulties is large, is unfavorable for actual use very much.Even if there is the simple transmitting device of some systems, but its performance is difficult to practical requirement, and is easy to break down, need to overhaul frequently, safeguard, operating cost is very high, and economic benefit is difficult to improve.
Summary of the invention
The object of the present invention is to provide a kind of wireless electric energy transmission device, solve the system existed in prior art and simplify and the problem being difficult to take into account stable and reliable for performance.
To achieve these goals, the technical solution used in the present invention is as follows:
Wireless electric energy transmission device, it is characterized in that, comprise single chip machine controlling circuit, the IR2111 half-bridge driven module be connected with this single chip machine controlling circuit output, the transmitting coil be connected with the output of this IR2111 half-bridge driven module, and this transmitting coil sampled and sample information is fed back to the current sample module of single chip machine controlling circuit, and the electric energy receiving circuit supporting with described transmitting coil, wherein, described IR2111 half-bridge driven module comprises IR2111 chip, triode Q1, Q3, Q4, metal-oxide-semiconductor Q2, Q5, diode D1, D2, D3, resistance R1, R2, R3, R4, R5, the base stage of described triode Q3 is connected with the output of described single chip machine controlling circuit by resistance R4, its grounded emitter, its collector electrode is then connected with the base stage of triode Q1 and Q4 respectively by resistance R3, also be connected with power supply by resistance R1 simultaneously, the collector electrode of described triode Q1 connects power supply, the grounded collector of triode Q4, the emitter of triode Q1 with Q4 is connected with IR2111 chip simultaneously, described diode D1 is connected directly between on IR2111 chip, diode D2 is in parallel with metal-oxide-semiconductor Q2, diode D3 is in parallel with metal-oxide-semiconductor Q5, and diode D2 and D3 connects, metal-oxide-semiconductor Q2 and Q5 connects, the two ends of described diode D3 are simultaneously as output, with described transmitting coil conducting, described metal-oxide-semiconductor Q2 is connected with IR2111 chip by resistance R2, described metal-oxide-semiconductor Q5 is connected with IR2111 chip by resistance R5, described electric energy receiving circuit comprises the receiving coil supporting with described transmitting coil, the diode group be connected with the output of this receiving coil, and the MC34063 chip be connected with this diode group, described diode group comprises diode D1, D2, D3, D4, D6, D7, D8, wherein diode D4 and D8 the first series arm in series, diode D6 and D7 the second series arm in series, diode D1, D2, D3 forms the first parallel branch, described first series arm is in parallel with the second series arm, and connect with described first parallel branch, and the tie point of diode D4 and D8 is connected with receiving coil output, the tie point of diode D6 with D7 is connected with receiving coil output, described MC34063 chip is connected with the output of described first parallel branch by diode D5, described MC34063 chip is also connected with the inductance L 1 of connecting with described diode D5, and auxiliary element, described single chip machine controlling circuit is also configured with power supply circuits, these power supply circuits comprise TPS5430 chip, the inductance L 2 be connected with this TPS5430 chip, resistance R6, R7 of connecting with this inductance L 2, between described inductance L 2 and TPS5430 chip, be also connected with the diode D9 of one end ground connection, on TPS5430 chip, be also provided with auxiliary element simultaneously.
Further, described current sample module comprises ACS712 chip, and the input of this ACS712 is connected with described transmitting coil, and its output is connected with described single chip machine controlling circuit, and this ACS712 chip is also connected with auxiliary element.
Further, described single chip machine controlling circuit mainly comprises a MCU and the 2nd MCU, the power end access 3.3V power supply of a described MCU, and by ground connection after a resistance and LED strip connection, described 3.3V power supply is also connected with LM1117 chip, LM7805 chip, single spininess socket, PLC5616 chip and ADS1115 chip, wherein, described LM1117 and LM7805 chip-in series, and ground capacity is connected on both pins, described single spininess socket and described 2nd MCU grafting, described PLC5616 chip and ADS1115 chip are then connected with a described MCU respectively, and described PLC5616 chip and ADS1115 chip are also connected to ground capacity, described 2nd MCU is also connected with control button.
The present invention adopts the TM4C123GH6PM single-chip microcomputer of TI company to be master controller, with Switching Power Supply managing chip TPS5430, MC34063, half-bridge driven chip I R2111 is core, by single-chip microcomputer output frequency and all transformable PWM ripple of duty ratio, transmitting coil is given after being dominated the half-bridge formed by IR2111 and being amplified by signal, receiving coil Received signal strength is through over commutation, after filtering, the boosted switch power supply consisted of MC34063 carries out transformation of electrical energy, whole system is simple, easy realization, operation and maintenance cost is low, transmitting procedure is reliable and stable, practical value and economic worth are all very high.
Accompanying drawing explanation
Fig. 1 is overall system block diagram of the present invention.
Fig. 2 is the circuit theory diagrams of IR2111 half-bridge driven module in the present invention.
Fig. 3 is the schematic diagram of electric energy receiving circuit in the present invention.
Fig. 4 is the circuit theory diagrams of current sample module in the present invention.
Fig. 5 is the schematic diagram of power supply circuits in the present invention.
Fig. 6 is the schematic diagram of single chip machine controlling circuit in the present invention.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described, and embodiments of the present invention include but not limited to the following example.
Embodiment
As shown in Figure 1, wireless electric energy transmission device disclosed by the invention, mainly comprise radiating portion and receiving unit, wherein, radiating portion comprises single chip machine controlling circuit, power supply circuits, IR2111 half-bridge driven module, current sample module and transmitting coil, and receiving unit comprises receiving coil and based on the receiving circuit of MC34063 chip.Modules circuit is described below in detail.
IR2111 half-bridge driven module is one of core design of the present invention, and circuit diagram as shown in Figure 2.As can be seen from the figure, described IR2111 half-bridge driven module comprises IR2111 chip, triode Q1, Q3, Q4, metal-oxide-semiconductor Q2, Q5, diode D1, D2, D3, resistance R1, R2, R3, R4, R5, the base stage of described triode Q3 is connected with the output of described single chip machine controlling circuit by resistance R4, its grounded emitter, its collector electrode is then connected with the base stage of triode Q1 and Q4 respectively by resistance R3, also be connected with power supply by resistance R1 simultaneously, the collector electrode of described triode Q1 connects power supply, the grounded collector of triode Q4, the emitter of triode Q1 with Q4 is connected with IR2111 chip simultaneously, described diode D1 is connected directly between on IR2111 chip, diode D2 is in parallel with metal-oxide-semiconductor Q2, diode D3 is in parallel with metal-oxide-semiconductor Q5, and diode D2 and D3 connects, metal-oxide-semiconductor Q2 and Q5 connects, the two ends of described diode D3 are simultaneously as output, with described transmitting coil conducting, described metal-oxide-semiconductor Q2 is connected with IR2111 chip by resistance R2, described metal-oxide-semiconductor Q5 is connected with IR2111 chip by resistance R5.
Radiating portion is the core circuit portions in the present invention, and rear class can obtain the size how much power depends on transmitting power to a great extent.The design adopts IR2111 to promote half-bridge in the hope of obtaining larger electric current, and owing to adopting half-bridge to promote to launch, the choosing pipe of metal-oxide-semiconductor is just very important.The design adopts the model of TI company to be the metal-oxide-semiconductor of CSD19535, and its maximum voltage is 100V, electric current 150A, and has the advantages such as conversion quick, sturdy and durable, low conduction impedance, low turn-on voltage.
Current sample module as shown in Figure 4, comprises ACS712 chip, and the input of this ACS712 is connected with described transmitting coil, and its output is connected with described single chip machine controlling circuit, and this ACS712 chip is also connected with auxiliary element.
Single chip machine controlling circuit as shown in Figure 6, mainly comprise a MCU and the 2nd MCU, the power end access 3.3V power supply of a described MCU, and by ground connection after a resistance and LED strip connection, described 3.3V power supply is also connected with LM1117 chip, LM7805 chip, single spininess socket, PLC5616 chip and ADS1115 chip, wherein, described LM1117 and LM7805 chip-in series, and ground capacity is connected on both pins, described single spininess socket and described 2nd MCU grafting, described PLC5616 chip and ADS1115 chip are then connected with a described MCU respectively, and described PLC5616 chip and ADS1115 chip are also connected to ground capacity, described 2nd MCU is also connected with control button.
And the power supply circuits of single-chip microcomputer as shown in Figure 5, comprise TPS5430 chip, the inductance L 2 be connected with this TPS5430 chip, resistance R6, R7 of connecting with this inductance L 2, between described inductance L 2 and TPS5430 chip, be also connected with the diode D9 of one end ground connection, on TPS5430 chip, be also provided with auxiliary element simultaneously.The present invention adopts the TM4C123GH6PM single-chip microcomputer of TI, can power by 5V or 3.3V, when 5V powers, linear stabilized voltage power supply on minimum system plate, efficiency can be affected, so we adopt Switching Power Supply step-down chip TPS5430, being powered by 15V and directly dropping to 3.3V is that single-chip microcomputer is powered, and efficiency comparatively uses LM7805 or LM117 to increase %6.TPS5430 is that a 4.5V-42V inputs, and export the voltage-releasing voltage stabilizer of 3.5A, this pressurizer has an integrated high side MOSFET, and this device can tolerate the throw load pulse up to 45V.Source current time non-loaded only has 146 μ A, and power cutoff electric current only has 1 μ A.
Electric energy receiving circuit as shown in Figure 3, comprises the receiving coil supporting with described transmitting coil, the diode group be connected with the output of this receiving coil, and the MC34063 chip be connected with this diode group, described diode group comprises diode D1, D2, D3, D4, D6, D7, D8, wherein diode D4 and D8 the first series arm in series, diode D6 and D7 the second series arm in series, diode D1, D2, D3 forms the first parallel branch, described first series arm is in parallel with the second series arm, and connect with described first parallel branch, and the tie point of diode D4 and D8 is connected with receiving coil output, the tie point of diode D6 with D7 is connected with receiving coil output, described MC34063 chip is connected with the output of described first parallel branch by diode D5, described MC34063 chip is also connected with the inductance L 1 of connecting with described diode D5, and auxiliary element, described single chip machine controlling circuit is also configured with power supply circuits, these power supply circuits comprise TPS5430 chip, the inductance L 2 be connected with this TPS5430 chip, resistance R6, R7 of connecting with this inductance L 2, between described inductance L 2 and TPS5430 chip, be also connected with the diode D9 of one end ground connection, on TPS5430 chip, be also provided with auxiliary element simultaneously.
Present system circuit structure is simple, and realize easily, cost is low, stable and reliable operation, has very high practical value and economic benefit.
Above-described embodiment is only the preferred embodiments of the present invention, not limiting the scope of the invention, as long as adopt design principle of the present invention, and the change carried out non-creativeness work on this basis and make, all should belong within protection scope of the present invention.
Claims (3)
1. wireless electric energy transmission device, it is characterized in that, comprise single chip machine controlling circuit, the IR2111 half-bridge driven module be connected with this single chip machine controlling circuit output, the transmitting coil be connected with the output of this IR2111 half-bridge driven module, and this transmitting coil sampled and sample information is fed back to the current sample module of single chip machine controlling circuit, and the electric energy receiving circuit supporting with described transmitting coil, wherein, described IR2111 half-bridge driven module comprises IR2111 chip, triode Q1, Q3, Q4, metal-oxide-semiconductor Q2, Q5, diode D1, D2, D3, resistance R1, R2, R3, R4, R5, the base stage of described triode Q3 is connected with the output of described single chip machine controlling circuit by resistance R4, its grounded emitter, its collector electrode is then connected with the base stage of triode Q1 and Q4 respectively by resistance R3, also be connected with power supply by resistance R1 simultaneously, the collector electrode of described triode Q1 connects power supply, the grounded collector of triode Q4, the emitter of triode Q1 with Q4 is connected with IR2111 chip simultaneously, described diode D1 is connected directly between on IR2111 chip, diode D2 is in parallel with metal-oxide-semiconductor Q2, diode D3 is in parallel with metal-oxide-semiconductor Q5, and diode D2 and D3 connects, metal-oxide-semiconductor Q2 and Q5 connects, the two ends of described diode D3 are simultaneously as output, with described transmitting coil conducting, described metal-oxide-semiconductor Q2 is connected with IR2111 chip by resistance R2, described metal-oxide-semiconductor Q5 is connected with IR2111 chip by resistance R5, described electric energy receiving circuit comprises the receiving coil supporting with described transmitting coil, the diode group be connected with the output of this receiving coil, and the MC34063 chip be connected with this diode group, described diode group comprises diode D1, D2, D3, D4, D6, D7, D8, wherein diode D4 and D8 the first series arm in series, diode D6 and D7 the second series arm in series, diode D1, D2, D3 forms the first parallel branch, described first series arm is in parallel with the second series arm, and connect with described first parallel branch, and the tie point of diode D4 and D8 is connected with receiving coil output, the tie point of diode D6 with D7 is connected with receiving coil output, described MC34063 chip is connected with the output of described first parallel branch by diode D5, described MC34063 chip is also connected with the inductance L 1 of connecting with described diode D5, and auxiliary element, described single chip machine controlling circuit is also configured with power supply circuits, these power supply circuits comprise TPS5430 chip, the inductance L 2 be connected with this TPS5430 chip, resistance R6, R7 of connecting with this inductance L 2, between described inductance L 2 and TPS5430 chip, be also connected with the diode D9 of one end ground connection, on TPS5430 chip, be also provided with auxiliary element simultaneously.
2. wireless electric energy transmission device according to claim 1, it is characterized in that, described current sample module comprises ACS712 chip, the input of this ACS712 is connected with described transmitting coil, its output is connected with described single chip machine controlling circuit, and this ACS712 chip is also connected with auxiliary element.
3. wireless electric energy transmission device according to claim 1, it is characterized in that, described single chip machine controlling circuit mainly comprises a MCU and the 2nd MCU, the power end access 3.3V power supply of a described MCU, and by ground connection after a resistance and LED strip connection, described 3.3V power supply is also connected with LM1117 chip, LM7805 chip, single spininess socket, PLC5616 chip and ADS1115 chip, wherein, described LM1117 and LM7805 chip-in series, and ground capacity is connected on both pins, described single spininess socket and described 2nd MCU grafting, described PLC5616 chip and ADS1115 chip are then connected with a described MCU respectively, and described PLC5616 chip and ADS1115 chip are also connected to ground capacity, described 2nd MCU is also connected with control button.
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| CN106230414A (en) * | 2016-08-29 | 2016-12-14 | 成都信息工程大学 | A kind of MOSFET/IGBT high-speed driving circuit based on linear optical coupling isolation |
| CN107104415A (en) * | 2017-04-24 | 2017-08-29 | 苏州合欣美电子科技有限公司 | A kind of overtemperature protection LED circuit of wireless power |
| CN107533534A (en) * | 2015-02-19 | 2018-01-02 | 欧希亚有限公司 | Embedded or sedimentation type skin antenna for integrated wireless power facility |
| CN108444502A (en) * | 2018-03-28 | 2018-08-24 | 武汉大学 | A kind of sensing system and measurement method based on wireless power transmission |
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Cited By (5)
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| CN106230414A (en) * | 2016-08-29 | 2016-12-14 | 成都信息工程大学 | A kind of MOSFET/IGBT high-speed driving circuit based on linear optical coupling isolation |
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| CN108444502A (en) * | 2018-03-28 | 2018-08-24 | 武汉大学 | A kind of sensing system and measurement method based on wireless power transmission |
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| CN104362773B (en) | 2016-05-25 |
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