CN104357805A - Graphite plate in MOCVD device - Google Patents
Graphite plate in MOCVD device Download PDFInfo
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- CN104357805A CN104357805A CN201410641935.8A CN201410641935A CN104357805A CN 104357805 A CN104357805 A CN 104357805A CN 201410641935 A CN201410641935 A CN 201410641935A CN 104357805 A CN104357805 A CN 104357805A
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- Prior art keywords
- graphite plate
- substrate
- substrates
- hole
- pit
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a graphite plate in an MOCVD device. The graphite plate in the MOCVD device comprises at least one piece pit, wherein the area of the at least one piece pit is greater than that of substrates and is an integral multiple of the areas of the substrates; convex angles matched with the angles of the substrates are formed in the at least one piece pit; a certain number of substrates and closely arranged just cover the at least one piece pit. According to the graphite plate, no gap is formed between the substrates; only one giant piece pit is formed in the whole graphite plate; or few gaps are used for dividing the whole graphite plate into several giant piece pits; by virtue of the gap-free design, the utilization rate of the graphite plate can be greatly improved; meanwhile, the substrates are provided with small chambers as far as possible or are free of chamber; the square substrates in the giant piece pit can be more closely arranged; the gap between the pieces is avoided; if the gap and the protruded edge exist, the turbulent flow is caused and the stability of the airflow is influenced, so that the quality of crystals of epitaxial samples is influenced.
Description
Technical field
The invention belongs to technical field of semiconductors, the substrate arrangement method in the graphite plate particularly used in chemical vapour deposition (CVD) technical field and graphite plate
Background technology
MOCVD is the english abbreviation of metal organic chemical vapor deposition (Metal-organic Chemical VaporDeposition).Why important MOCVD technology is and to be subject to paying close attention to so be widely because MOCVD technology can accurately control and grow multiple different atomic shell material, thus achieve the leap of semiconductor heterostructure monocrystal thin films Material growth technology, what make the superlattice that originally cannot realize and quantum well structure and graded component is grown to serve as possibility.People are seen by new material structure and device want to see but the physical phenomenon can't see over, and substantially increase the photoelectric properties of device.First MOCVD is manufactured in nineteen sixty-eight by Rockwell International of the U.S., through the development of decades, it is multidisciplinary that current MOCVD device integrates precision optical machinery, semiconductor material, vacuum electronic, hydromeehanics, optics, chemistry, computer etc., is the most advanced and sophisticated photoelectron specific equipment that a kind of level of automation is high, expensive, Integration ofTechnology degree is high.
During MOCVD growing film, mainly the saturated vapo(u)r of reaction source to be brought in reaction chamber by the container in organometallic reaction source by current-carrying gas (Carrier gas) and mix with other reactant gases, then being there is by above the substrate that heats the epitaxy that chemical reaction facilitates film.Generally speaking, current-carrying gas is hydrogen normally, but also some in particular cases adopts nitrogen.Conventional substrate is gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide (InP), silicon (Si), silicon carbide (SiC), sapphire (Sapphire, Al2O3) and lithium aluminate (LiAlO2) etc.And usual grown thin-film material is mainly III-V compound semiconductor material or two or six group iii v compound semiconductor materials, these semiconductor films are mainly used in the field such as photoelectric device and microelectronic device.Because MOCVD has numerous advantages and broad use range, therefore MOCVD has become the main coating technique of industry member.MOCVD device is different according to purposes, and its structure and form are also had nothing in common with each other.Developing along with LED industry in the recent period, MOCVD also develops towards the increasingly automated industrialization mode with Highgrade integration as current unique a kind of equipment growing LED.Removing LED industry, MOCVD is also more and more extensive in the application of all respects such as microelectronic device, electrical device, solar cell, superconductive device.In sum, in a foreseeable future, the application & development prospect of MOCVD device is very bright.
Graphite plate is very important accessory in MOCVD device, and graphite plate conventional is at present all circular.Graphite plate is distributed with the groove of some circles, and these grooves are exactly the sheet hole of placing substrate.At present conventional sheet hole is 2 inches diameter, the circular groove of 4 inches or 6 inches.The degree of depth in these sheets hole is usually slightly large than the thickness of substrate, and has certain distance between sheet hole and sheet hole.From the above mentioned, can two problems be there is in the graphite plate of current use, first and the inconsistent sheet hole of substrate height along causing the fringing effect of epitaxial wafer, affect stablizing of air-flow in edge, cause turbulent flow, make the edge of substrate cannot the good GaN material of epitaxy quality.The second, even if circular piece hole solid matter row, between sheet hole with sheet hole, also can there is unlapped region, this region along with the increase of substrate diameter can be increasing, thus cause the reduction of graphite plate utilization ratio and the decline of production capacity.
Summary of the invention
For solving the above-mentioned problems in the prior art, the present invention proposes a kind of novel graphite dish placing non-round substrate.The present invention proposes a kind of graphite plate of MOCVD device, it comprises at least one sheet hole, described pit area is greater than Substrate Area, and be the integral multiple of Substrate Area, at least one sheet pit edge described has the salient angle matched with the angle of substrate, and just in time covers described at least one sheet hole after the substrate close-packed arrays of some amount.
Wherein, the edge in described at least one sheet hole has a groove.
Wherein, the diameter of described graphite plate is 10-150 centimetre.
Wherein, square, rectangle, trilateral or hexagonal substrate can be placed in described at least one sheet hole.
Wherein, described substrate has rounded corners.
Wherein, described graphite plate is circular.
Wherein, described hole for multiple, and has interval to separate between each hole.
The present invention propose graphite plate between substrate and substrate continuously every, whole graphite plate only has one huge hole.Or only have little several interval whole graphite plate to be divided into several huge hole.In huge hole, rely on the solid matter of substrate row that substrate is fixed.Nonseptate design can increase substantially the utilization ratio of graphite plate.Meanwhile, the substrate of employing is as far as possible by less chamfering or without chamfering.Therefore, it is possible to make the more tight of the square shaped substrate arrangement in huge hole, prevent there is space between slice, thin piece.If there is space, equally with the edge exceeded also can cause turbulent flow, affect the stability of air-flow, thus affect the crystal mass of extension sample.
Accompanying drawing explanation
Fig. 1 is the graphite plate of the MOCVD device proposed in first embodiment of the invention structure front view when not putting substrate slice;
Fig. 2 is the graphite plate of the MOCVD device proposed in first embodiment of the invention structure front view when putting substrate slice;
Fig. 3 is the graphite plate of the MOCVD device proposed in second embodiment of the invention structure front view when not putting substrate slice;
Fig. 4 is the graphite plate of the MOCVD device proposed in second embodiment of the invention structure front view when putting substrate slice.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
The output of existing chemical vapor depsotition equipment is on the low side, and the cost of epitaxial chip is higher, cannot meet the requirement of application.Discovery is studied through contriver, the substrate placed in graphite plate due to existing chemical vapor depsotition equipment adopts circular design, the utilization ratio that result in graphite plate is on the low side, and the number that result in the substrate of each stove extension of chemical vapor depsotition equipment is restricted.Meanwhile, study discovery through contriver, because the sheet hole height at edge and the variable thickness of substrate cause, make to cause turbulent flow at slice, thin piece edge during epitaxy, cause edge cannot grow the GaN material of high-crystal quality.
Below in conjunction with specific embodiment, technical scheme of the present invention is described in detail.
The graphite plate that Fig. 1 shows the MOCVD device proposed in first embodiment of the invention does not put structure front view during substrate slice.The graphite plate that Fig. 2 shows the MOCVD device proposed in first embodiment of the invention puts structure front view during substrate slice.As shown in Figure 1, described graphite plate 10 is circular graphitic dish, and the diameter of its graphite plate 10 is 10-150 centimetre, is preferably 45 centimetres, the graphite plate that this and current Veeco company K465i type adopt in the same size.Whole graphite plate only has one huge to cheat 11, and described pit edge has salient angle, and the angle of described salient angle and respective substrate coincide.The sheet pit area of graphite plate is greater than the area of substrate, and the area in sheet hole is the integral multiple of Substrate Area.Multiple substrate sheet hole in solid matter arrange, between substrate and substrate continuously every.Described substrate can be the while that square also can be rectangle and also can be trilateral or hexagon.The substrate shape that can cover graphite plate after solid matter row completely is all applicable to the graphite plate of the present invention's proposition.Cheat 11 edges at sheet in addition and the semi-circular recesses 14 that one diameter is 3 millimeters is set.Outer time delay, as shown in Figure 2, the substrate 12 that graphite plate is selected is foursquare Sapphire Substrate, and its length of side is 5 centimetres, and this is consistent with the diameter of 2 inch circular substrates, but area ratio 2 inch circular substrate wants large 25%.Sapphire four angles 13 of square adopt radius to be the rounded corners of 1 millimeter.Square Sapphire Substrate is solid matter row in sheet hole 11.Convenient in order to get sheet, cheat 11 edges at sheet and the semi-circular recesses 14 that one diameter is 3 millimeters be set, thus when getting first substrate tweezers easy to use.
The graphite plate that Fig. 3 shows the MOCVD device proposed in second embodiment of the invention does not put structure front view during substrate slice.The graphite plate that Fig. 4 shows the MOCVD device proposed in second embodiment of the invention puts structure front view during substrate slice.As shown in Figure 3 and Figure 4, described graphite plate 10 is circular graphitic dish, and the diameter of its graphite plate 20 is preferably 45 centimetres, this graphite plate still adopted with current K465i board in the same size.During the linerless end as shown in Figure 3, whole graphite plate has four huge to cheat 211,212,213,214, have the interval 22 of width 3 millimeters between four sheets hole, described interval 22 is two mutually vertical and intervals intersected, and the sheet of whole graphite plate hole is divided into described four huge hole by it.The sheet pit area of graphite plate is greater than the area of substrate, and the area in sheet hole is the integral multiple of Substrate Area.Multiple substrate sheet hole in solid matter arrange, between substrate and substrate continuously every.Described substrate can be the while that square also can be rectangle and also can be trilateral or hexagon.The substrate shape that can cover graphite disc hole after solid matter row completely is all applicable to the graphite plate of the present invention's proposition.The substrate slice number placed in each huge hole 211,212,213,214 can equally also can not wait, and Fig. 4 shows equal exemplary plot.In addition, interval 22 in the graphite plate that the present invention proposes also is not limited to two mutually vertical and intervals of decile, it can be an interval or many vertical or non-vertical and angled interval mutually, cheats as long as just cover whole after placing the substrate slice of correspondingly-shaped in each hole.In addition, the substrate shape of placing in each hole and size can be different.Outer time delay, piles the graphite plate of square substrate as shown in Figure 4, and the substrate 23 that graphite plate is selected is foursquare Sapphire Substrate, and its length of side is 5 centimetres, and this is consistent with the diameter of 2 inch circular substrates, but area ratio 2 inch circular substrate wants large 25%.Sapphire four angles 24 of square adopt radius to be the rounded corners of 1 millimeter.Square Sapphire Substrate is solid matter row in sheet hole 211,212,213 and 214.Convenient in order to get sheet, in the edge in sheet hole 211,212,213,214, the semi-circular recesses 251,252,253,254 that a diameter is 3 millimeters is all set, thus when getting first substrate tweezers easy to use.
In the present invention, the area of substrate is 15-2500 square centimeter, and the radius of the rounded corners of substrate is less than 2 millimeters.
The surface that continuously can utilize graphite plate every graphite plate to greatest extent adopted in the present invention, improves the utilization ratio to graphite plate, thus improves the output of chemical vapor depsotition equipment, reduce the cost of epitaxial chip, meet the requirement of application.When simultaneously nonseptate design also makes to grow air-flow can evenly spray to substrate surface, decrease the generation of turbulent flow.Thus decrease fringing effect, improve the crystal mass of edge's epitaxial material.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. the graphite plate of a MOCVD device, it comprises at least one sheet hole, described pit area is greater than Substrate Area, and be the integral multiple of Substrate Area, at least one sheet pit edge described has the salient angle matched with the angle of substrate, and just in time covers described at least one sheet hole after the substrate close-packed arrays of some amount.
2. graphite plate as claimed in claim 1, wherein, the edge in described at least one sheet hole has a groove.
3. graphite plate as claimed in claim 1, wherein, the diameter of described graphite plate is 10-150 centimetre.
4. graphite plate as claimed in claim 1, wherein, can place square, rectangle, trilateral or hexagonal substrate in described at least one sheet hole.
5. graphite plate as claimed in claim 1, wherein, described substrate has rounded corners.
6. graphite plate as claimed in claim 1, wherein, described graphite plate is circular.
7. the graphite plate as described in any one of claim 1-6, wherein, described hole for multiple, and has interval to separate between each hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410641935.8A CN104357805A (en) | 2014-11-06 | 2014-11-06 | Graphite plate in MOCVD device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410641935.8A CN104357805A (en) | 2014-11-06 | 2014-11-06 | Graphite plate in MOCVD device |
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| Publication Number | Publication Date |
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| CN104357805A true CN104357805A (en) | 2015-02-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410641935.8A Pending CN104357805A (en) | 2014-11-06 | 2014-11-06 | Graphite plate in MOCVD device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114227957A (en) * | 2021-12-20 | 2022-03-25 | 常州时创能源股份有限公司 | Silicon rod cutting method |
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2014
- 2014-11-06 CN CN201410641935.8A patent/CN104357805A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114227957A (en) * | 2021-12-20 | 2022-03-25 | 常州时创能源股份有限公司 | Silicon rod cutting method |
| CN114227957B (en) * | 2021-12-20 | 2024-03-26 | 常州时创能源股份有限公司 | Silicon rod cutting method |
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Application publication date: 20150218 |