CN104347590A - Electric fuse structure - Google Patents
Electric fuse structure Download PDFInfo
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- CN104347590A CN104347590A CN201310338360.8A CN201310338360A CN104347590A CN 104347590 A CN104347590 A CN 104347590A CN 201310338360 A CN201310338360 A CN 201310338360A CN 104347590 A CN104347590 A CN 104347590A
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Abstract
The invention relates to an electric fuse structure, which comprises a plurality of electric fuse structure units, wherein each electric fuse structure unit comprises a substrate, a first electrode, a first electric fuse, a dielectric layer, a conductive plug, a second electrode and a second electric fuse, each first electrode is positioned on the corresponding substrate, each first electric fuse is connected with the corresponding first electrode, each dielectric layer is positioned on the corresponding substrate, the corresponding first electrode and the corresponding first electric fuse, each conductive plug is positioned in the corresponding dielectric layer and is electrically connected with the corresponding first electric fuse, each second electrode is positioned on the corresponding dielectric layer, each second electric fuse is connected with the corresponding second electrode, and is electrically connected with the corresponding conductive plug, one of each first electrode and the corresponding second electrode is an anode, the other one of each first electrode and the corresponding second electrode is a cathode, at least two electric fuse structure units share one cathode, and the electric fuse structure units sharing one cathode are positioned at the same side of the cathode. The electric fuse structure has the advantage that the electric fuse structure units share the cathode, so the occupation area of the electric fuse structure units in an integrated circuit chip is reduced, and the layout design of a metal interconnection structure in the integrated circuit chip is more selective.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of electric fuse structure.
Background technology
Along with the lasting reduction of characteristic size, semiconductor device is more and more easily subject to the impact of impurity or defect in silicon base, and the inefficacy of single diode or MOS transistor often causes the inefficacy of whole integrated circuit (IC) chip.In order to solve described problem, improving rate of finished products, in integrated circuit (IC) chip, often forming some redundant circuits.When after manufacture craft completes during discovery part of devices cisco unity malfunction, can by fuse failure by disable system and other circuit module electric isolation, and redundant circuit be utilized to replace original disable system.Particularly in the manufacture process of memory, because the quantity of memory cell is a lot, have partial memory element failure unavoidably, therefore the memory cell of some redundancies is often additionally formed, when detecting discovery partial memory element failure after completing, can utilize fuse-wires structure that the memory cell of redundancy is replaced original dead-file unit, and not need the memory of correspondence to scrap, improve rate of finished products of dispatching from the factory.
At present, conventional fuse-wires structure is generally two kinds: laser fuse (laser fuse) structure and electric fuse (electric fuse is called for short E-fuse) structure.Laser fuse structures utilizes laser beam to cut fuse, and electric fuse structure utilizes big current that fuse failure or generation electromigration are caused fuse cutout.Along with the development of semiconductor technology, electric fuse structure instead of laser fuse structures gradually.
Fig. 1 is the plan structure schematic diagram of existing a kind of electric fuse structure in integrated circuit (IC) chip, Fig. 2 is the profile along AA direction in Fig. 1, as depicted in figs. 1 and 2, electric fuse structure comprises multiple (for two in figure) electric fuse structure unit, and each electric fuse structure unit comprises: substrate 1; The first electric fuse 32 being positioned at the negative electrode 31 on substrate 1 and being connected with negative electrode 31; Be positioned at the dielectric layer 2 on substrate 1, negative electrode 31 and the first electric fuse 32; Be positioned at the conductive plunger 5 of dielectric layer 2, conductive plunger 5 is electrically connected with the first electric fuse 32; Be positioned at the anode 61 on dielectric layer 2 and the second electric fuse 62, second electric fuse 62 of being connected with anode 61 is electrically connected with conductive plunger 5.
Electric fuse structure is usually synchronously formed with metal interconnect structure, when same integrated circuit (IC) chip makes electric fuse structure and metal interconnect structure simultaneously, the circuit layout density of electric fuse structure region is less than the circuit layout density of metal interconnect structure, for reducing the harmful effect that circuit layout density inconsistency is brought, can the first pseudo-electric fuse 7 being set in the both sides of each electric fuse structure unit first electric fuse 32, the second pseudo-electric fuse 8 is set in the both sides of the second electric fuse 62.Therefore, be provided with the first pseudo-electric fuse 7 between the first electric fuse 32 of adjacent two electric fuse structure unit arranged in parallel, between the second electric fuse 62 of adjacent two electric fuse structure unit arranged in parallel, be provided with the second pseudo-electric fuse 8.
Because electric fuse structure and metal interconnect structure are synchronously formed, therefore, the area that electric fuse structure occupies integrated circuit (IC) chip can affect the layout designs of metal interconnect structure.The area that existing electric fuse structure occupies integrated circuit (IC) chip is comparatively large, and the layout designs of metal interconnect structure in integrated circuit (IC) chip is subject to many limitations.For this reason, industry accounts for the less electric fuse structure of chip area in the urgent need to a kind of.
Summary of the invention
The problem to be solved in the present invention is: the area that existing electric fuse structure occupies integrated circuit (IC) chip is larger.
For solving the problem, the invention provides a kind of electric fuse structure, comprising multiple electric fuse structure unit, described electric fuse structure unit comprises:
Substrate;
The first electric fuse being positioned at the first electrode on described substrate and being connected with the first electrode;
Be positioned at the dielectric layer on described substrate, the first electrode and the first electric fuse;
Be positioned at described dielectric layer and the conductive plunger be electrically connected with described first electric fuse;
The second electric fuse being positioned at the second electrode on described dielectric layer and being connected with the second electrode, described second electric fuse is electrically connected with conductive plunger, in described first electrode, the second electrode one be anode, another is negative electrode;
Have two described electric fuse structure units shareds negative electrode at least, and the multiple described electric fuse structure unit sharing a negative electrode is positioned at the same side of described negative electrode.
Alternatively, the the first electric fuse side sharing the electric fuse structure unit of a negative electrode is provided with the first pseudo-electric fuse, and described all first electric fuses sharing the electric fuse structure unit of a negative electrode are positioned at the same side of the first pseudo-electric fuse, described first pseudo-electric fuse and the first electric fuse are positioned at same layer.
Alternatively, the the second electric fuse side sharing the electric fuse structure unit of a negative electrode is provided with the second pseudo-electric fuse, and described all second electric fuses sharing the electric fuse structure unit of a negative electrode are positioned at the same side of the second pseudo-electric fuse, described second pseudo-electric fuse and the second electric fuse are positioned at same layer.
Alternatively, described first pseudo-electric fuse is connected with the first electrode.
Alternatively, described second pseudo-electric fuse is connected with the second electrode.
Alternatively, described first pseudo-electric fuse is parallel with the first electric fuse.
Alternatively, described second pseudo-electric fuse is parallel with the second electric fuse.
Alternatively, the material of described first electrode, the first electric fuse, the second electrode and the second electric fuse is aluminium or copper.
Alternatively, the material of described first pseudo-electric fuse is aluminium or copper.
Alternatively, the material of described second pseudo-electric fuse is aluminium or copper.
Compared with prior art, technical scheme of the present invention has the following advantages:
Due to multiple electric fuse structure units shared negative electrode, distance between first electric fuse that therefore can reduce the plurality of electric fuse structure unit and the distance between the second electric fuse, make without the need to arranging pseudo-electric fuse between the first electric fuse of the plurality of electric fuse structure unit, when between the second electric fuse of the plurality of electric fuse structure unit, pseudo-electric fuse is set, the object that the circuit layout density of the circuit layout density and metal interconnect structure that just can reach electric fuse structure region is consistent.Thus reduce the area that electric fuse structure occupies integrated circuit (IC) chip, make the layout designs of metal interconnect structure in integrated circuit (IC) chip have more more options.
Accompanying drawing explanation
Fig. 1 is the plan structure schematic diagram of existing a kind of electric fuse structure in integrated circuit (IC) chip, and for for purpose of brevity, the dielectric layer in electric fuse structure does not show;
Fig. 2 is the profile along AA direction in Fig. 1;
Fig. 3 is the plan structure schematic diagram of electric fuse structure in the first embodiment of the present invention, and for for purpose of brevity, the dielectric layer in electric fuse structure does not show;
Fig. 4 is the profile along BB direction in Fig. 3;
Fig. 5 is the plan structure schematic diagram of electric fuse structure in the second embodiment of the present invention, and for for purpose of brevity, the dielectric layer in electric fuse structure does not show.
Embodiment
The larger problem of the area of integrated circuit (IC) chip is occupied in order to solve existing electric fuse structure, the invention provides a kind of new electric fuse structure, this electric fuse structure comprises multiple electric fuse structure unit, have two same negative electrodes of electric fuse structure units shared at least, distance between first electric fuse that therefore can reduce the plurality of electric fuse structure unit and the distance between the second electric fuse, when making without the need to arranging pseudo-electric fuse between first electric fuse and the second electric fuse of the plurality of electric fuse structure unit, the object that the circuit layout density of the circuit layout density and metal interconnect structure that just can reach electric fuse structure region is consistent.Thus reduce the area that electric fuse structure occupies integrated circuit (IC) chip, make the layout designs of metal interconnect structure in integrated circuit (IC) chip have more more options.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
First embodiment
Shown in composition graphs 3 and Fig. 4, electric fuse structure comprises multiple (for two in figure) electric fuse structure unit, and described electric fuse structure unit comprises: substrate 100; Be positioned at the first electrode 110 on substrate 100 and the first electric fuse 120, first electrode 110 of being connected with the first electrode 110 is negative electrode; Be positioned at the dielectric layer 130 on substrate 100, first electrode 110 and the first electric fuse 120; Be positioned at dielectric layer 130 and the conductive plunger 140 be electrically connected with the first electric fuse 120; Be positioned at the second electrode 150 on dielectric layer 130 and the second electric fuse 160, second electric fuse 160 of being connected with the second electrode 150 is electrically connected with conductive plunger 140, the second electrode 150 is anode; Two electric fuse structure units shareds negative electrode, and two the electric fuse structure unit sharing a negative electrode are positioned at the same side of negative electrode.
From the above, due to two electric fuse structure units shared negative electrodes, distance between first electric fuse that therefore can reduce these two electric fuse structure unit and the distance between the second electric fuse, make without the need to arranging pseudo-electric fuse between the first electric fuse of two electric fuse structure unit, when between the second electric fuse of two electric fuse structure unit, pseudo-electric fuse is set, the object that the circuit layout density of the circuit layout density and metal interconnect structure that just can reach electric fuse structure region is consistent.Thus reduce the area that electric fuse structure occupies integrated circuit (IC) chip, make the layout designs of metal interconnect structure in integrated circuit (IC) chip have more more options.
In the present embodiment, continue with reference to shown in Fig. 3, the first electric fuse 120 side sharing the electric fuse structure unit of a negative electrode is provided with the first pseudo-electric fuse 170, and described all first electric fuses 120 sharing the electric fuse structure unit of a negative electrode are positioned at the same side of the first pseudo-electric fuse 170, in other words, between described adjacent two the first electric fuses 120 sharing the electric fuse structure unit of a negative electrode the pseudo-electric fuse 170 of the first pseudo-electric fuse 170, first is not set and the first electric fuse 120 is positioned at same layer; The second electric fuse 160 side sharing the electric fuse structure unit of a negative electrode is provided with the second pseudo-electric fuse 180, and described all second electric fuses 160 sharing the electric fuse structure unit of a negative electrode are positioned at the same side of the second pseudo-electric fuse 180, in other words, between described adjacent two the second electric fuses 160 sharing the electric fuse structure unit of a negative electrode the pseudo-electric fuse 180 of the second pseudo-electric fuse 180, second is not set and the second electric fuse 160 is positioned at same layer.
In the present embodiment, all first electric fuses 120 sharing the electric fuse structure unit of a negative electrode are parallel to each other, and the first pseudo-electric fuse 170 is parallel with the first electric fuse 120; All second electric fuses 160 sharing the electric fuse structure unit of a negative electrode are parallel to each other, and the second pseudo-electric fuse 180 is parallel with the second electric fuse 160.
In the present embodiment, the first electric fuse 120, second electric fuse 160 is linearly, and the first electric fuse 120 is mutually vertical with the first electrode 110, and the second electric fuse 160 is mutually vertical with the second electrode 150.
Continue with reference to shown in Fig. 4, substrate 100 is formed with device (not shown), as elements such as transistor, electric capacity, resistance.
Continue with reference to shown in Fig. 3 and Fig. 4, the first electrode 110, first electric fuse 120 and the first pseudo-electric fuse 170 synchronously can be formed with the lower level interconnection line in metal interconnect structure; Second electrode 150, second electric fuse 160 and the second pseudo-electric fuse 180 synchronously can be formed with the higher level interconnection line in metal interconnect structure; Conductive plunger 140 synchronously can be formed with the conductive plunger in metal interconnect structure.
In a particular embodiment, the material of the first pseudo-electric fuse 170, second electrode 150, second electric fuse 160 of electrode 110, first electric fuse 120, first and the second pseudo-electric fuse 180 is aluminium.
Dielectric layer 130 can be the lamination of one deck dielectric layer or multilayer dielectricity layer.
Below wherein a kind of formation method of the electric fuse structure of the first embodiment is briefly described:
As shown in Figure 4, provide substrate 100, form the first metal layer (material is aluminium) on the substrate 100;
Form graphical photoresist layer on the first metal layer, with graphical photoresist layer for mask, dry etching is carried out to the first metal layer, form the first electrode 110 of multiple electric fuse structure unit, the first electric fuse 120 be connected with the first electrode 110, and the first pseudo-electric fuse 170, first electrode 110 is negative electrode, two electric fuse structure units shareds negative electrode (i.e. the first electrode), and two the electric fuse structure unit sharing a negative electrode are positioned at the same side of negative electrode, first pseudo-electric fuse 170 is positioned at the side of the first electric fuse 120 of the electric fuse structure unit of a shared negative electrode, and all first electric fuses 120 sharing the electric fuse structure unit of a negative electrode are positioned at the same side of the first pseudo-electric fuse 170, in other words, between adjacent two first electric fuses 120 of the electric fuse structure unit of a shared negative electrode, the first pseudo-electric fuse 170 is not set,
Substrate 100, first electrode 110, the first electric fuse 120 be connected with the first electrode 110 and the first pseudo-electric fuse 170 form dielectric layer 130;
Utilize chemical mechanical milling tech to carry out planarization to dielectric layer 130, then, dielectric layer 130 forms graphical photoresist layer; With graphical photoresist layer for mask, carry out dry etching to dielectric layer 130, in dielectric layer 130, form through hole, the first electric fuse 120 is exposed in the bottom of this through hole;
Formed and cover on dielectric layer 130 and the metal level (as tungsten) be filled in through hole, cmp is carried out to this metal level, until expose dielectric layer 130, the remaining metal be filled in through hole forms conductive plunger 140, and conductive plunger 140 is electrically connected with the first electric fuse 120;
Dielectric layer 130 and conductive plunger 140 are formed the second metal level (material is aluminium);
Second metal level forms graphical photoresist layer, with graphical photoresist layer for mask, dry etching is carried out to the second metal level, form the second electrode 150 of multiple electric fuse structure unit, the second electric fuse 160 be connected with the second electrode 150, and the second pseudo-electric fuse 180, second electrode 150 is anode, second pseudo-electric fuse 180 is positioned at the side of the second electric fuse 160 of the electric fuse structure unit of a shared negative electrode, and all second electric fuses 160 sharing the electric fuse structure unit of a negative electrode are positioned at the same side of the second pseudo-electric fuse 180, in other words, between adjacent two second electric fuses 160 of the electric fuse structure unit of a shared negative electrode, the second pseudo-electric fuse 180 is not set, second electric fuse 160 is electrically connected with conductive plunger 140.
It is noted that the formation method of the electric fuse structure of the first embodiment is not limited only to above-described embodiment.
Second embodiment
Difference between second embodiment and the first embodiment is: as shown in Figure 5, and the first pseudo-electric fuse 170 is connected with the first electrode 110, and the second pseudo-electric fuse 180 is connected with the second electrode 150.
Those skilled in the art can according to the difference of electric fuse structure in the first embodiment and the second embodiment, give on the basis of electric fuse structure formation method of the first embodiment, corresponding adjustment is made to the electric fuse structure formation method of the first embodiment, to obtain the formation method of the electric fuse structure of the second embodiment, do not repeat them here.
In other embodiments, the material of the first electrode, the first electric fuse, the first pseudo-electric fuse, the second electrode, the second electric fuse, the second pseudo-electric fuse also can be copper.In this case, the method beyond the first embodiment can be utilized to form electric fuse structure.
In other embodiments, also can be that the first electrode is anode, the second electrode is negative electrode.
In other embodiments, also can be electric fuse structure units shared negative electrode of three or more.
In other embodiments, the first electric fuse, the second electric fuse also can be the shape beyond linearity.
In other embodiments, the first electric fuse also can not be mutually vertical with the first electrode, and the second electric fuse also can not be mutually vertical with the second electrode.
In the present invention, each embodiment adopts laddering literary style, and emphasis describes the difference with previous embodiment, and the same section in each embodiment can with reference to previous embodiment.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (10)
1. an electric fuse structure, is characterized in that, comprises multiple electric fuse structure unit, and described electric fuse structure unit comprises:
Substrate;
The first electric fuse being positioned at the first electrode on described substrate and being connected with the first electrode;
Be positioned at the dielectric layer on described substrate, the first electrode and the first electric fuse;
Be positioned at described dielectric layer and the conductive plunger be electrically connected with described first electric fuse;
The second electric fuse being positioned at the second electrode on described dielectric layer and being connected with the second electrode, described second electric fuse is electrically connected with conductive plunger, in described first electrode, the second electrode one be anode, another is negative electrode;
Have two described electric fuse structure units shareds negative electrode at least, and the multiple described electric fuse structure unit sharing a negative electrode is positioned at the same side of described negative electrode.
2. electric fuse structure according to claim 1, it is characterized in that, the the first electric fuse side sharing the electric fuse structure unit of a negative electrode is provided with the first pseudo-electric fuse, and described all first electric fuses sharing the electric fuse structure unit of a negative electrode are positioned at the same side of the first pseudo-electric fuse, described first pseudo-electric fuse and the first electric fuse are positioned at same layer.
3. electric fuse structure according to claim 1, it is characterized in that, the the second electric fuse side sharing the electric fuse structure unit of a negative electrode is provided with the second pseudo-electric fuse, and described all second electric fuses sharing the electric fuse structure unit of a negative electrode are positioned at the same side of the second pseudo-electric fuse, described second pseudo-electric fuse and the second electric fuse are positioned at same layer.
4. electric fuse structure according to claim 2, is characterized in that, described first pseudo-electric fuse is connected with the first electrode.
5. electric fuse structure according to claim 3, is characterized in that, described second pseudo-electric fuse is connected with the second electrode.
6. electric fuse structure according to claim 2, is characterized in that, described first pseudo-electric fuse is parallel with the first electric fuse.
7. electric fuse structure according to claim 3, is characterized in that, described second pseudo-electric fuse is parallel with the second electric fuse.
8. electric fuse structure according to claim 1, is characterized in that, the material of described first electrode, the first electric fuse, the second electrode and the second electric fuse is aluminium or copper.
9. electric fuse structure according to claim 2, is characterized in that, the material of described first pseudo-electric fuse is aluminium or copper.
10. electric fuse structure according to claim 3, is characterized in that, the material of described second pseudo-electric fuse is aluminium or copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310338360.8A CN104347590B (en) | 2013-08-05 | 2013-08-05 | Electric fuse structure |
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| CN201310338360.8A CN104347590B (en) | 2013-08-05 | 2013-08-05 | Electric fuse structure |
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| CN104347590B CN104347590B (en) | 2017-09-26 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060131575A1 (en) * | 2004-12-17 | 2006-06-22 | Matsushita Electric Industrial Co., Ltd. | Electronic device and manufacturing method thereof |
| CN101562172A (en) * | 2008-04-14 | 2009-10-21 | 恩益禧电子股份有限公司 | Semiconductor device |
| CN102543950A (en) * | 2010-12-16 | 2012-07-04 | 联发科技股份有限公司 | Electrical fuse structure |
| CN102956612A (en) * | 2011-08-26 | 2013-03-06 | 联华电子股份有限公司 | Electric fuse structure |
| CN103065685A (en) * | 2011-10-21 | 2013-04-24 | 台湾积体电路制造股份有限公司 | Electrical fuse memory arrays |
-
2013
- 2013-08-05 CN CN201310338360.8A patent/CN104347590B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060131575A1 (en) * | 2004-12-17 | 2006-06-22 | Matsushita Electric Industrial Co., Ltd. | Electronic device and manufacturing method thereof |
| CN101562172A (en) * | 2008-04-14 | 2009-10-21 | 恩益禧电子股份有限公司 | Semiconductor device |
| CN102543950A (en) * | 2010-12-16 | 2012-07-04 | 联发科技股份有限公司 | Electrical fuse structure |
| CN102956612A (en) * | 2011-08-26 | 2013-03-06 | 联华电子股份有限公司 | Electric fuse structure |
| CN103065685A (en) * | 2011-10-21 | 2013-04-24 | 台湾积体电路制造股份有限公司 | Electrical fuse memory arrays |
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| CN104347590B (en) | 2017-09-26 |
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