CN104347386A - Integrated wet corrosion equipment used for manufacturing graph substrate - Google Patents
Integrated wet corrosion equipment used for manufacturing graph substrate Download PDFInfo
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- CN104347386A CN104347386A CN201310316617.XA CN201310316617A CN104347386A CN 104347386 A CN104347386 A CN 104347386A CN 201310316617 A CN201310316617 A CN 201310316617A CN 104347386 A CN104347386 A CN 104347386A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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Abstract
The invention relates to an integrated wet corrosion equipment used for manufacturing a graph substrate. The equipment comprises a control unit, a graph substrate manufacturing unit which comprises a high and low temperature sour rot module, a graph mask manufacturing module and a cleaning module. According to the equipment, a BOE corrosion groove in special design is introduced, firstly, the graphical manufacturing function of a patter mask is realized functionally, according to the manufacturing technology characteristics, a special-purpose corrosion support for the BOE corrosion groove is designed, so the graphical accurate control function of the graph mask is realized, moreover, an acetone groove and a hydrofluoric corrosion groove are added, integrated realization of the technology of the wet corrosion equipment graph substrate is further realized in the equipment, the manufacturing technology of the graph substrate is simplified, time is saved, and the process is shortened. According to the equipment, a solid base for the technology of graph substrates with large dimensions is established.
Description
Technical field
The present invention relates to the graph substrate preparing technical field of microelectronic mechanical apparatus technology and semiconductive luminescent materials.The integrated wet etching equipment of graph substrate is obtained in particular to a kind of BOE solution wet etching sapphire.
Background technology
The problems such as environment in recent years protection, decreasing pollution occur again and again, develop into whole people's concerned issue again to Involvement of public community, whole people's construction from associated mechanisms.And environmental protection, high-tech product that is energy-conservation and new forms of energy have become the major domain leading international new industry development, developing point of economic increase in recent years.And along with the development of semiconductive luminescent materials, GaN(gallium nitride) based light-emitting diode (LED) invented in this year.Its 10 times of energy conservation characteristics to incandescent lamp, without mercury pollution, inert gas pollutes and small size, the advantage such as flexible, becomes the strong of conventional light source and substitutes.Be considered to the third generation illuminating product after both incandescent lamp, fluorescent lamp and caused the solid-state illumination revolution of globalization, being applied in illumination, display, backlight every field by wide sending out.Outstanding behaviours is all had all to illustrate its outstanding behaviours from many-sides such as environmental protection, fail safe, healths.Countries in the world comprise the Chinese government, development illuminating engineering are classified as the grand strategy behave realizing building resource-conserving and this fundamental state policy of environmentally friendly country.
And along with GaN base LED product further deep in the application of lighting field, also further obvious to the demand of its high brightness and power.Because the current of GaN material mainly uses heterogeneous epitaxial technology, Sapphire Substrate is main substrate, but the lattice constant mismatch degree between GaN and Sapphire Substrate is more than 14%, thermal mismatching degree differs more than one times, and lattice mismatch large like this and differential thermal expansion will inevitably cause the residual mechanical stress problem of the GaN epitaxy sheet grown on a sapphire substrate.Therefore, the high density dislocation caused by residual mechanical stress, lattice mismatch and thermal mismatching, the efficiency of luminescent device and life-span is brought to decline, a large amount of GaN associated materials, device and technical study concentrate on the problem overcoming the heteroepitaxy due to non-GaN substrate and bring, and thus the growth course of GaN base luminescent material becomes complicated and inefficient; In addition, due to the high index of refraction of GaN material, make the most light sent from LED active area be subject to total reflection and limit in the chips, the external quantum efficiency of luminescent device is generally below 40%.
And along with GaN base LED component application more and more extensive, more and more higher to the demand of its power, high brightness, with simple foreign substrate---the GaN base LED component of Sapphire Substrate growth is difficult to meet the brightness demand of market to LED component.In order to realize the general illumination of high-power GaN-based LED, overcoming the problem of the high dislocation density that traditional Sapphire Substrate Epitaxial growth brings, meanwhile, using new technological means, improving light-output efficiency is the most urgent demand and the link of most critical.Therefore a kind of new process is arisen at the historic moment, be exactly that sapphire pattern substrate is also called PSS.Sapphire substrate designs and produces out micron order or the nano level pattern with micro-structural ad hoc rules, use the output light form (relief pattern on sapphire substrate can produce the extraction efficiency of the effect increase light of light scattering or refraction) of control LED, simultaneously, utilizing during patterned sapphire substrate growing GaN epitaxial wafer to make GaN layer occur horizontal meaders in growth course, but dislocation occurs that when crossing figure bending merges, thus the dislocation density between the GaN of minimizing growth, improve crystal mass, and promote LED internal quantum, increase light extraction efficiency.Compared with being grown on the LED of general Sapphire Substrate, brightness adds more than 30%.
The chemical property of sapphire material is very stable, and extreme hardness, general Physical Processing means are also difficult to carry out.Current common method can be divided into dry etching and high-temperature strong acid wet etching two kinds of methods.
Wherein, dry etching PSS is mainly by applying thick film photolithography glue on a sapphire substrate, utilize exposure technique to carve figure on a photoresist, and be the plasma-induced etching apparatus of mask ICP(with it) etc. dry etching equipment carry out dry etching, obtain last sapphire pattern substrate.It is main production prepared by current PSS substrate that dry etching prepares graphical sapphire substrate, its main feature be produce comparatively stable.But, owing to using the plasma-induced etching apparatus of ICP() equipment, significantly increase preparation cost, reduce production capacity.ICP equipment is used to prepare PSS, once preparing maximum quantity is at present 22, needs more than 40 minutes used time, and needs photoresist to do mask owing to etching, the technological requirements such as this also proposes very high requirement for the photoetching process of leading portion, photoresist mask thicknesses uniformity are high.Meanwhile, due to equipment homogeneity question, it is also not suitable for 4 inches even preparation of 6 inches of graphical sapphire substrates.Meanwhile, when preparing graph substrate with dry etching easily to sapphire substrate surface, particularly mesa edge position, causes certain pollution and damage, is unfavorable for the further raising of epitaxial loayer crystal mass.In epitaxial process, reactant is at the table top of substrate, and groove comprises on groove sidewall and all growing, and sidewall growth thing can and the combination of table top epitaxial lateral overgrowth layer.And side wall surface be by dry etching formed by the face of major injury, on this, the material of growth must have very high dislocation density, wherein partial dislocation will extend in upper layer side epitaxial layers, will reduce epitaxial layer quality, be unfavorable for improving device performance further.
And the appearance of wet etching technique effectively can improve the problems referred to above.Wet corrosion technique prepare sapphire pattern substrate step mainly: steam coating silicon dioxide film in Sapphire Substrate, photoetching technique is utilized to carve the figure of photoresist on silica, BOE corrode silicon dioxide removes photoresist after forming the transfer of figure afterwards, recycling acid corrosion carves figure on sapphire, modify the wafer after figure and finally removed silicon dioxide film with HF, obtain final sapphire pattern substrate pss.The major advantage using wet etching to prepare graph substrate is can a large amount of graph substrate of one time to produce, and productivity ratio improves greatly, simultaneously, because corrosion Sapphire Substrate is without the need to consuming SiO2, therefore, technological requirement is above reduced, thus reduce process costs.Same, wet etching prepares graph substrate not to be affected by substrate dimension, goes for the sapphire pattern substrate preparation of 4 inches, 6 inches.Therefore, its technical development receives the extensive concern that substrate prepares industry.But, be not specifically designed to the equipment that wet etching prepares patterned substrate at present, the wet etching equipment that current conventional wet etching method prepares graph substrate mostly on a sapphire substrate is the simple high temperature corrosion equipment of LED preparation technology, its design, mainly for preparing LED chip, only comprises temperature control and acid corrosion function.And to prepare in wet method graph substrate required for SiO
2mask pattern is prepared function, is gone mask function etc. all cannot realize.More cannot realize the restriction of staining these two factors avoiding metal ion, obviously can not complete with same equipment at wet-layer preparation LED chip or when preparing sapphire pattern substrate, and buy how cover wet etching equipment is also worthless to produce.And being accepted extensively by what produce and using along with wet etching graph substrate, obviously increase for special wet etching equipment demand.
Summary of the invention
The object of the present invention is to provide a kind of integrated wet etching equipment preparing graph substrate, to solve the demand of existing wet etching GaN graph substrate without special equipment.
For achieving the above object, technical scheme provided by the invention is as follows:
For the preparation of an integrated wet etching equipment for graph substrate, this equipment comprises: control unit; Graph substrate prepares unit (see accompanying drawing 1); Wherein,
Control unit is mainly control panel (see figure 7), comprising: water circuit system, air path system, electric power system and sour discharging of waste liquid system (sour heat-extraction system); The major function of described control unit is: except to water route, wind path, electric power and sour heat-extraction system control except, also prepared by graph substrate to the control of unit, comprises the temperature to acid corrosion and mask corrosion, time control program setting; Cleaning module program setting, and the control to the control of equipment miscellaneous function and sour groove overtemperature alarm etc.;
Graph substrate is prepared unit and is mainly divided into: high and low temperature sour module, and graphic mask prepares module and cleaning module (see accompanying drawing 2-4);
Described integrated wet etching equipment mainly comprises as lower component: control panel; High and low temperature acid solution etching tank; BOE etching tank; Deionized water (being also called D.I.Water) rinse bath; Acetone groove; Hydrofluoric acid (HF) etching tank; Baffle plate; Cell body lid; Exhaust system; The special corrosion support of graphic mask preparation;
Described control panel, can be positioned at any position of centre position or convenient operation on the right side of equipment; Independent operation can be carried out to each cell body, the time of the temperature of liquid in each cell body, corrosion or cleaning can be shown; The prompting function to time, temperature can be set; Described control panel is provided with the time of each cell body and the control module of temperature and display module, so that strictly monitor each corrosion process, this is one of guarantee of the integrality of figure;
Described high and low temperature acid solution etching tank (also can become sour groove), is put into same corrosion great Qu high temperature sour groove and low temperature sour groove, separates with baffle plate; High and low temperature acid solution etching tank temperature-controllable is 0 ° ~ 350 °; When sample carries out figure sour by accurate temperature control to reduce the difficulty of wet etching, ensure wet etching patterned substrate time pattern integrity;
Described BOE etching tank, is positioned at the left part of another corrosion great Qu; Mask corrosion and wet etching are perfectly combined, and the complete process of wet etching, improves production efficiency;
Described deionized water (being also called D.I.Water) rinse bath, in order to separate BOE etching tank and acetone groove, hydrofluoric acid etching tank, can stop the reaction of each corrosion better; Its material interior walls be smooth, dirt not easy to hang;
Described acetone groove, provides convenience for process integration, accelerates process;
Adding of HF groove, acetone groove and washed with de-ionized water cell body, decrease the processing step of preparation graph substrate, save time and resource;
Described cell body lid, described each cell body is equipped with; Described cell body lid, because of the difference of cell body material, selects its corresponding material to make cell body lid; Cell body lid can be covered on temporary no etching tank or on the longer cell body of etching time, ensure personal safety to greatest extent;
Described electric power system, except for the invention provides except the normal operation of electric power support endlessly, also can provide to the module that each cell body carry out independently controlling the Electric control matched with it;
Described exhaust system is negative-pressure extraction type flushing air exhausting device, is positioned at top and the rear in described equipment corrosion district; Can independently control to regulate air force; In operation, can be discharged in time by the air draft of top during corrosive liquid gaseous volatilization; Also be discharged by rear in corrosive liquid gaseous volatilization process; The benefit of the design of described exhaust system is, reduces the residual of corrosive liquid gas to the full extent, reduces the corrosion interference between wet method while ensuring personal safety;
Described water circuit system, for clean wafers, the supply and the discharge that stop the deionized water of wet etching process;
Described sour discharging of waste liquid system, for high/low temperature acid corrosion waste liquid, BOE corrode waste liquid and hydrofluoric acid corrosion waste liquid single, carry out control discharge individually.
Described integrated wet etching equipment, is characterized in that, described high and low temperature acid solution etching tank selected materials is quartz, pottery, plastics or the antiacid corrosion material of other high temperature resistances; Described BOE corrode cell body adopt quartz, pottery, plastics or other can the material of resistant to hydrogen fluoric acid and ammonium fluoride solution; Described washed with de-ionized water groove material be quartz, pottery, plastics or other can the material of resistant to hydrogen fluoric acid and ammonium fluoride solution; Described hydrofluoric acid etching tank, its material is the material of quartz or energy resistant to hydrogen fluoric acid and solution thereof; Described sour discharging of waste liquid system, adopts quartz or other antiacid corrosion materials.
Described integrated wet etching equipment, it is characterized in that, described baffle plate, be positioned at the central authorities of described equipment, can hand-operated lifting or Electronic control, be divided into two to corrode great Qu wet etching equipment corrosion region, stop the impact of (high/low temperature acid corrosion groove is in same large corrosion region) between two corrosion great Qu liquid; Sour groove and the first two cell body are mainly isolated in the effect of baffle plate, and BOE corrosion rate is very fast, and when corroding respectively, the rise of baffle plate effectively can isolate the impact of sour on BOE etching tank and washed with de-ionized water groove; Weir Plate Thickness is 0.5-10cm; After baffle plate rises within the scope of height 1-60cm, another corrosion region cell body at least 10cm should be exceeded; Described baffle plate is acidproof, alkali resistant material.
Described integrated wet etching equipment, is characterized in that, described baffle plate selects the material of transparent material.
Described integrated wet etching equipment, it is characterized in that, described graphic mask preparation corrosion support (see Fig. 5-6, also can referred to as hand basket), for on-fixed on equipment, independently with the matching used individuality of integrated wet etching equipment of the present invention; Described corrosion support is by corroding pallet and tray supporter forms, the bottom of described corrosion support is level tray, the shape of pallet is circular, oval, square or polygon etc., wherein circular is with oval, pallet supports along dish diameter two ends, upper end has handle to be connected, and handle will have the antiskid groove (hold trace line) corresponding with hand-type; Pallet front is the shallow slot of the accommodation corresponding size wafer arranged at a certain distance; Corrosion bracket tray is distributed with the hole (hole diameter size can according to the shallow slot spacing setting of bearing wafer) running through pallet positive and negative; Described pallet and hole design are in order in guarantee wafer homogeneous corrosion, the while of reducing tension force and the buoyancy of water, ensure that the wafer be corroded can enter cell body smoothly with pallet; The effect of bracing frame is action in corrosion process and afterwards, makes pallet keep horizontal equilibrium when getting rid of artificial, is consistent in the speed, temperature and time of corrosion to reach every sheet sample; For preferred round tray, its diameter is between 12.6-50cm, and its diameter and thickness are according to the setting of BOE etching tank; Described shallow slot, its diameter, between 5.1-31cm, can need to make pallet by actual wafer dimensional conditions.
Described integrated wet etching equipment, is characterized in that, described control panel adopts glove box type guidance panel, and the size of panel hole should make whole piece arm can enter operating space to carry out wet etching operation; The material (as quartz etc.) that described guidance panel material selection is antiacid and transparent; Operation gloves be rubber gloves or other can corrosion-resistant material make.
Described integrated wet etching equipment, is characterized in that, described control panel adopts opposite opened operation protection panel or pull-down operation protection panel.
Described integrated wet etching equipment, is characterized in that, comprises the lighting device of high-low temperature resistant, and be arranged in the left and right sides wallboard top in equipment corrosion district, light source comprises LED, and Covers has corrosion resistance, is advisable with not light with violet rays source; The clear experiment item condition observing etching tank inside of energy, is carrying out in wet etching test, comparatively can be easy to the time judging corrosion.
Described integrated wet etching equipment, is characterized in that, described etching tank is all designed to ellipse; Or be all rectangle; Or acetone groove, hydrofluoric acid etching tank are rectangle, all the other are oval.
Described integrated wet etching equipment, is characterized in that, the distribution design of described etching tank is in line and divides formula, without baffle plate in this design.
The present invention's design be a integration be specifically designed to the wet etching equipment that wet etching prepares patterned substrate.A great difference is had compared with existing etching apparatus.What now common etching apparatus mainly comprised is high temperature corrosion equipment.Its main feature comprises high and low temperature sour groove and washed with de-ionized water groove.Separately comprise panel to control and the equipment such as air draft, and this kind of equipment cannot to realize in wet etching graph substrate preparation technology graphic mask graphically (namely to SiO
2preparation process graphically), meanwhile, cannot realize the step of preparation process such as mask removal.Therefore, the integration that cannot realize preparing for wet etching graph substrate technology is produced.The wet etching equipment designed in the present invention.Creatively introduce the BOE etching tank having carried out particular design, first functionally achieve graphic mask graphical (namely to SiO
2preparation function graphically), simultaneously according to its preparation technology's feature, devises the corrosion support (hand basket) that BOE etching tank is special, achieves the patterned accurate controlling functions of graphic mask; Meanwhile, add acetone groove and hydrofluoric acid etching tank, furthermore achieved that the technique that wet etching prepares graph substrate realizes in the integration of this equipment, simplify the preparation technology of graph substrate, save time, shorten flow process.Meanwhile, this equipment is that production large scale graph substrate technique has established solid foundation.
Accompanying drawing explanation
The overall control flow schematic diagram of Fig. 1 integration wet etching equipment.
Fig. 2 circular recess corrosion region floor map.
Fig. 3 rectangular channel corrosion region floor map.
Fig. 4 corrodes cell body and divides formula schematic diagram.Fig. 4 A: circular etching tank; Fig. 4 B: rectangular corrosive groove.Wherein,
101-high-temperature acid etching tank, 102-low-temperature-acid-corrosion groove, 103-BOE etching tank, 104-D.I.Water rinse bath (washed with de-ionized water groove), 105-acetone groove, 106-HF etching tank, 107-baffle plate.
Fig. 5 corrodes holding tray surface schematic diagram.Wherein,
Cavity on 501-pallet; The position of 502-film releasing; 503-wet etching pallet.
Fig. 6 corrodes support and Tray side schematic diagram.Wherein, 601-tray supporter, 602-handle, 603-pallet.
Fig. 7 control panel schematic diagram.Fig. 7 A, 7B provide two kinds of different layout methods.Wherein,
701-corrosion temperature shows; 702-etching time shows; 703-etching time indicator light; 704-temperature setting button;
705-set of time button; 706,708-increases button; 707,709-reduces button;
710-mains switch; 711-EMO(emergency stop push button).
Fig. 8 equipment front schematic view.Fig. 8 A has gloves guidance panel, and Fig. 8 B has opposite opened guidance panel, and Fig. 8 C has pull-down guidance panel.Wherein,
801 is exhaust outlet; Exhaust outlet in 802-operating room; 803-inspection chamber; 804-gloves guidance panel (opposite opened or pull-down can be designed to); About 805-opening type guidance panel; 806-pull-down guidance panel.
Embodiment
Be described in further detail below in conjunction with the integrated wet etching equipment of the drawings and specific embodiments to the preparation graph substrate that the present invention proposes.It should be noted that, accompanying drawing all adopts the schematic form of simplification, with aid illustration practicality of the present invention and use the object of advantage.
A kind of circular corrosion cell body wet etching equipment.Comprise: control unit; Graph substrate prepares unit (see accompanying drawing 1).
Control unit is mainly: control panel (see Fig. 7, is prepared the control of unit, comprised the temperature to acid corrosion and mask corrosion, time control program setting to graph substrate; The program setting of purging system, and the control to equipment miscellaneous function).Electric control system; Waterway control system; Wind path control system and sour discharging of waste liquid (discharging of waste liquid) control system.Graph substrate is prepared unit and is mainly divided into: high and low temperature sour module, and graphic mask prepares module and cleaning module (see accompanying drawing 2-4).Position can be placed on left side, the right side of this equipment, convenient operation, and not by the restriction of height; Also can consider the top being put in equipment operating protection panel, save space, unfavorable factor is exactly that operating personnel limit by height; Separately can consider that guidance panel is independent of outside equipment, is connected on equipment by power line, its advantage is that operation is convenient, also can add other control modules as required.
Equipment critical piece mainly comprises: control panel; High and low temperature acid solution etching tank; BOE etching tank; Deionized water (being also called D.I.Water) rinse bath; Acetone groove; Hydrofluoric acid (HF) groove; Baffle plate; Cell body lid; Exhaust system; Graphic mask preparation corrosion support (also can be called for short hand basket).
Circular corrosion cell body wet etching equipment mainly refers to that this equipment corrosion cell body is for circular, and specially designed corrosion support (hand basket) just can maximize according to the diameter of corrosion cell body and make hand basket so for this reason, ideally utilizes its space.Wherein the distribution of etching apparatus cell body can be designed to straight line and divide formula, and former and later two corrosion also can be divided into separate open type greatly, if need also to be designed to two corrosion in left and right to separate open type greatly.
Circular corrosion cell body wet etching equipment (see in accompanying drawing 2) acetone cell body and HF corrode cell body and are designed to rectangle, and mainly because when carrying out this two wet etchings, available generic card fills in row corrosion process, and can not impact etching process.If equipment corrosion cell body is distributed as the formula of dividing and puts, acetone cell body and HF corrode cell body just need not be designed to rectangle, and six cell bodies all can be made into circle.
The design of this equipment baffle plate mainly separates two large corrosion regions, and when baffle plate rises, two large corrosion regions can carry out respective corrosion process, avoid mutual corrosion impact and carry out certain protection to operating personnel.The design of cell body lid, apart from outside above-mentioned functions, also can avoid the volatilization of liquid active ingredient, affects etching time and corrosive effect.Exhaust system directly over equipment and in the design of rear, mainly in order to the safety of operating personnel, also can reduce the impact between liquid between atmosphere.
Described graphic mask preparation corrosion support (see Fig. 5-6, also can referred to as hand basket), for on-fixed on equipment, independently with the matching used individuality of integrated wet etching equipment of the present invention; Described corrosion support is by corroding pallet and tray supporter forms, and the bottom of described corrosion support is circular horizontal pallet, and pallet supports along dish diameter two ends, and upper end has handle to be connected, and handle will have the antiskid groove (hold trace line) corresponding with hand-type; Corrosion pallet is for having certain thickness round tray, and pallet front is the shallow slot of the accommodation corresponding size wafer arranged at a certain distance, and the wafer be corroded is placed in its effect; Corrosion bracket tray is distributed with the hole (hole diameter size, quantity can according to the shallow slot spacing setting of bearing wafer) running through pallet positive and negative; Described round tray and hole design are in order in guarantee wafer homogeneous corrosion, the while of reducing tension force and the buoyancy of water, ensure that the wafer be corroded can enter cell body smoothly with pallet; The effect of bracing frame is action in corrosion process and afterwards, makes pallet keep horizontal equilibrium when getting rid of artificial, is consistent in the speed, temperature and time of corrosion to reach every sheet sample.
The lighting device of water circuit system, sour discharging of waste liquid system and high-low temperature resistant, be all be equipped with to carry out wet etching process better, and better, safer, more humane.
Embodiment 1: a kind of circular corrosion cell body wet etching equipment (ginseng Fig. 2)
This equipment adopts pull-down guidance panel (ginseng Fig. 8 C).
The long 55cm in this equipment corrosion region, wide 40cm, be made up of 6 corrosion cell bodies, and corrosion cell body material is quartz, and (close operating personnel position is front, after away from operating personnel position being to be divided into former and later two corrosion great Qu with baffle plate.And these equipment corrosion region length and width can adjust as required, above data are minimum dimension).Back zone is high/low temperature acid corrosion groove, and left side is high-temperature acid etching tank, and right side is low-temperature-acid-corrosion groove (left and right etching tank is interchangeable).Be BOE etching tank on the left of proparea, centre is washed with de-ionized water groove, is acetone groove above right side, and lower right-hand side is HF etching tank.Wherein the cell body cross section of high/low temperature sour groove, BOE etching tank and washed with de-ionized water groove is circle (ellipse also can), diameter 15cm; Acetone groove and HF etching tank are rectangle, long 15cm, and wide 15cm(length can be identical with width, and width must meet the length of corrosion stent diameter).The degree of depth of each cell body of the dark 5cm(of each cell body can be different, but when corroding support and entering the solution of corrosion cell body, with corrosion bracket tray bottom space at least 2cm bottom cell body, corrosion bracket tray upper end and liquid level spacing at least 2cm).
The corrosion support (ginseng Fig. 6) of this equipment comprises tray supporter, handle and pallet, and material is quartz.Wherein, tray supporter is 2 quartz pushrods, and for connecting trays and handle, and to its supporting role of pallet, described support one end is welded on handle, and the other end is welded on pallet.Pallet diameter 12.6cm, thickness 1cm, pallet has slide glass shallow slot multiple, the diameter 5.1cm of each shallow slot, degree of depth 0.1cm; Some holes are distributed with between shallow slot.
Embodiment 2: circular corrosion cell body band glove box wet etching equipment
Embodiment 2 structure is with embodiment 1, and difference is: the guidance panel of equipment, except being designed to opposite opened operation protection panel and pull-down operation protection panel, also can be designed to glove box type (see Fig. 8, unfolding mode can adopt opposite opened or pull-down).Operating personnel are carrying out in wet-layer preparation graph substrate process; whole piece arm can be extend in gloves and operate; hole opening on panel wants large, can corrode cell body and operates in inner side corrosion region, protect operating personnel better when a bonding arm to go deep into.This circular corrosion cell body band glove box wet etching equipment can be selected as required.
Corrosion area size, etching tank size and corrosion stent size change into: the long 160cm in this equipment corrosion region, wide 120cm; Wherein the cell body cross section of high/low temperature sour groove, BOE groove and washed with de-ionized water groove is circle (ellipse also can), diameter 40cm; Acetone groove and HF etching tank are rectangle, long 40cm, and wide 40cm(length can be identical with width, and width must meet the length of corrosion stent diameter).The degree of depth of each cell body of the dark 5cm(of each cell body can be different, but when corroding support and entering the solution of corrosion cell body, with corrosion bracket tray bottom space at least 2cm bottom cell body, corrosion bracket tray upper end and liquid level spacing at least 2cm).
The corrosion support (ginseng Fig. 6) of this equipment comprises tray supporter, handle and pallet, and material is quartz.Wherein, tray supporter is 2 quartz pushrods, and for connecting trays and handle, and to its supporting role of pallet, described support one end is welded on handle, and the other end is welded on pallet.Pallet diameter 33cm, thickness 1cm, pallet has slide glass shallow slot multiple, the diameter 30.5cm of each shallow slot, degree of depth 0.1cm; Some holes are distributed with between shallow slot.
Embodiment 3: rectangular corrosive cell body wet etching equipment.
Embodiment 3 structure is with embodiment 1, and difference is: the high/low temperature sour groove in wet etching district, BOE etching tank, washed with de-ionized water groove is rectangle.Can effectively utilize etched mesa space; Corrosion area size, etching tank size and corrosion stent size change into:
The long 220cm in this equipment corrosion region, wide 160cm, be made up of 6 corrosion cell bodies, and corrosion cell body material is quartz, and (close operating personnel position is front, after away from operating personnel position being to be divided into former and later two corrosion great Qu with baffle plate.And these equipment corrosion region length and width can adjust as required, above data are minimum dimension).Back zone is high/low temperature acid corrosion groove, and left side is high-temperature acid etching tank, and right side is low-temperature-acid-corrosion groove (left and right etching tank is interchangeable).Be BOE etching tank on the left of proparea, centre is washed with de-ionized water groove, is acetone groove above right side, and lower right-hand side is HF etching tank.Wherein the cell body cross section of high/low temperature sour groove, BOE etching tank and washed with de-ionized water groove is rectangle, diameter 60cm; Acetone groove and HF etching tank are rectangle, long 60cm, and wide 60cm(length can be identical with width, and width must meet the length of corrosion stent diameter).The degree of depth of each cell body of the dark 20cm(of each cell body can be different, but when corroding support and entering the solution of corrosion cell body, with corrosion bracket tray bottom space at least 5cm bottom cell body, corrosion bracket tray upper end and liquid level spacing at least 5cm).
The corrosion support (ginseng Fig. 6) of this equipment comprises tray supporter, handle and pallet, and material is quartz.Wherein, tray supporter is 2 quartz pushrods, and for connecting trays and handle, and to its supporting role of pallet, described support one end is welded on handle, and the other end is welded on pallet.Pallet diameter 50cm, thickness 3cm, pallet has slide glass shallow slot multiple, the diameter 5.2cm of each shallow slot, degree of depth 1cm; Some holes are distributed with between shallow slot.
Embodiment 4: rectangular corrosive cell body band glove box wet etching equipment.
Embodiment 4 structure is with embodiment 1, and difference is: one, the high/low temperature sour groove in wet etching district, BOE cell body, washed with de-ionized water groove is rectangle.Can effectively utilize etched mesa space; Two, the guidance panel of equipment is except being designed to opposite opened operation protection panel and pull-down operation protection panel, also can be designed to glove box type (see Fig. 8, unfolding mode can adopt opposite opened or pull-down).Operating personnel are carrying out in wet-layer preparation graph substrate process; whole piece arm can be extend in gloves and operate; hole opening on panel wants large, can corrode cell body and operates in inner side corrosion region, protect operating personnel better when a bonding arm to go deep into.This rectangular corrosive cell body band glove box wet etching equipment can be selected as required.
Of the present invention appearance makes wet etch step achieve integration, and between preparation process short operation step, connecting is good, has taken into full account the safety issue of personnel.Compare dry etching, the advantage of wet etching is that program is single, and equipment is simple, and cost is low, and corrosion rate is fast, and output is high, has good etching selection ratio, and prepares large-sized wafer and have its impayable advantage.During dry process large scale graph substrate, uneven, the easy generation damage of etching speed and pollution, preparation large scale graph substrate is extremely difficult.And wet etching can carry out wet-layer preparation to large-sized wafer when preparing simultaneously, and erosion uniformity is good, can't harm and injure pollution, that preparation can't harm, the perfect improvement of graph substrate to epitaxial growth Dislocations serves critical effect, also serves eucyclic effect to bright dipping, heat radiation.Preparation graph substrate mainly with graphic mask Preparation equipment AOF calculation, 1 ICP equipment price more than 1,000,000 yuan, moon production capacity 1-2 ten thousand; And the integrated wet etching equipment of our design is far below ICP equipment, but design moon production capacity can up to 6-10 ten thousand, above data are enough to illustrate that wet etching prepares the advantage of graph substrate in production capacity, play a role in promoting to the process accelerating middle and lower reaches industrial chain.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement or improvement etc., all should be included in protection scope of the present invention.
Claims (10)
1., for the preparation of an integrated wet etching equipment for graph substrate, this equipment comprises: control unit; Graph substrate prepares unit; Wherein,
Control unit is mainly control panel, comprising: water circuit system, air path system, electric power system and sour discharging of waste liquid system; The major function of described control unit is: except to water route, wind path, electric power and sour heat-extraction system control except, also prepared by graph substrate to the control of unit, comprises the temperature to acid corrosion and mask corrosion, time control program setting; Cleaning module program setting, and to the control of equipment miscellaneous function and the control of sour groove overtemperature alarm;
Graph substrate is prepared unit and is mainly divided into: high and low temperature sour module, and graphic mask prepares module and cleaning module;
Described integrated wet etching equipment mainly comprises as lower component: control panel; High and low temperature acid solution etching tank; BOE etching tank; Washed with de-ionized water groove; Acetone groove; Hydrofluoric acid etching tank; Baffle plate; Cell body lid; Exhaust system; The special corrosion support of graphic mask preparation;
Described control panel, can carry out independent operation to each cell body, can show the time of the temperature of liquid in each cell body, corrosion or cleaning; The prompting function to time, temperature can be set; Described control panel is provided with the time of each cell body and the control module of temperature and display module;
Described high and low temperature acid solution etching tank, is put into same corrosion great Qu high temperature sour groove and low temperature sour groove, separates with baffle plate; High and low temperature acid solution etching tank temperature-controllable is 0 ° ~ 350 °; When sample carries out figure sour by accurate temperature control to reduce the difficulty of wet etching, ensure wet etching patterned substrate time pattern integrity;
Described BOE etching tank, is positioned at the left part of another corrosion great Qu;
Described washed with de-ionized water groove, in order to separate BOE etching tank and acetone groove, hydrofluoric acid etching tank, can stop the reaction of each corrosion better; Its material interior walls be smooth, dirt not easy to hang;
Described cell body lid, described each cell body is equipped with;
Described electric power system, except for the invention provides except the normal operation of electric power support endlessly, also can provide to the module that each cell body carry out independently controlling the Electric control matched with it;
Described exhaust system is negative-pressure extraction type flushing air exhausting device, is positioned at top and the rear in described equipment corrosion district; Can independently control to regulate air force;
Described water circuit system, for clean wafers, the supply and the discharge that stop the deionized water of wet etching process;
Described sour discharging of waste liquid system, for high/low temperature acid corrosion waste liquid, BOE corrode waste liquid and hydrofluoric acid corrosion waste liquid single, carry out control discharge individually.
2. integrated wet etching equipment as claimed in claim 1, is characterized in that, described high and low temperature acid solution etching tank selected materials is quartz, pottery, plastics or the antiacid corrosion material of other high temperature resistances; Described BOE corrode cell body adopt quartz, pottery, plastics or other can the material of resistant to hydrogen fluoric acid and ammonium fluoride solution; Described washed with de-ionized water groove material be quartz, pottery, plastics or other can the material of resistant to hydrogen fluoric acid and ammonium fluoride solution; Described hydrofluoric acid etching tank, its material is the material of quartz or energy resistant to hydrogen fluoric acid and solution thereof; Described sour discharging of waste liquid system, adopts quartz or other antiacid corrosion materials.
3. integrated wet etching equipment as claimed in claim 1, is characterized in that, described baffle plate, be positioned at the central authorities of described equipment, can hand-operated lifting or Electronic control, be divided into two to corrode great Qu wet etching equipment corrosion region, stop two impacts of corroding between great Qu liquid; Weir Plate Thickness is 0.5-10cm; After baffle plate rises within the scope of height 1-60cm, another corrosion region cell body at least 10cm should be exceeded; Described baffle plate is acidproof, alkali resistant material.
4. integrated wet etching equipment as claimed in claim 3, is characterized in that, described baffle plate selects the material of transparent material.
5. integrated wet etching equipment as claimed in claim 1, is characterized in that, described graphic mask preparation corrosion support, for on-fixed on equipment, independently with the matching used individuality of integrated wet etching equipment of the present invention; Described corrosion support is by corroding pallet and tray supporter forms, the bottom of described corrosion support is level tray, and the shape of pallet is circular, oval, square or polygon, and pallet supports along dish diameter two ends, upper end has handle to be connected, and handle will have the antiskid groove corresponding with hand-type; Pallet front is the shallow slot of the accommodation corresponding size wafer arranged at a certain distance; Corrosion bracket tray is distributed with the hole running through pallet positive and negative.
6. integrated wet etching equipment as claimed in claim 1, is characterized in that, described control panel adopts glove box type guidance panel, and the size of panel hole should make whole piece arm can enter operating space to carry out wet etching operation; The material that described guidance panel material selection is antiacid and transparent; Operation gloves be rubber gloves or other can corrosion-resistant material make.
7. integrated wet etching equipment as claimed in claim 1, is characterized in that, described control panel adopts opposite opened operation protection panel or pull-down operation protection panel.
8. integrated wet etching equipment as claimed in claim 1, is characterized in that, comprises the lighting device of high-low temperature resistant, and be arranged in the left and right sides wallboard top in equipment corrosion district, Covers has corrosion resistance.
9. integrated wet etching equipment as claimed in claim 1, is characterized in that, described etching tank is all designed to ellipse; Or be all rectangle; Or acetone groove, hydrofluoric acid etching tank are rectangle, all the other are oval.
10. integrated wet etching equipment as claimed in claim 1, is characterized in that, the distribution design of described etching tank is in line and divides formula, without baffle plate in this design.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310316617.XA CN104347386A (en) | 2013-07-25 | 2013-07-25 | Integrated wet corrosion equipment used for manufacturing graph substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310316617.XA CN104347386A (en) | 2013-07-25 | 2013-07-25 | Integrated wet corrosion equipment used for manufacturing graph substrate |
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| CN104347386A true CN104347386A (en) | 2015-02-11 |
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| CN201310316617.XA Pending CN104347386A (en) | 2013-07-25 | 2013-07-25 | Integrated wet corrosion equipment used for manufacturing graph substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110648948A (en) * | 2019-09-27 | 2020-01-03 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Quartz cleaning equipment |
| CN114804920A (en) * | 2021-01-18 | 2022-07-29 | 江苏科沛达半导体科技有限公司 | Novel high-temperature phosphoric acid etching machine and control mode thereof |
-
2013
- 2013-07-25 CN CN201310316617.XA patent/CN104347386A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110648948A (en) * | 2019-09-27 | 2020-01-03 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Quartz cleaning equipment |
| CN114804920A (en) * | 2021-01-18 | 2022-07-29 | 江苏科沛达半导体科技有限公司 | Novel high-temperature phosphoric acid etching machine and control mode thereof |
| CN114804920B (en) * | 2021-01-18 | 2024-03-15 | 江苏科沛达半导体科技有限公司 | Novel high-temperature phosphoric acid corrosion machine and control mode thereof |
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