CN104332823B - It is a kind of to improve the method for wide bar shaped high power semiconductor lasers beam quality - Google Patents
It is a kind of to improve the method for wide bar shaped high power semiconductor lasers beam quality Download PDFInfo
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- CN104332823B CN104332823B CN201410674400.0A CN201410674400A CN104332823B CN 104332823 B CN104332823 B CN 104332823B CN 201410674400 A CN201410674400 A CN 201410674400A CN 104332823 B CN104332823 B CN 104332823B
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- power semiconductor
- bar shaped
- high power
- semiconductor lasers
- wide bar
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Abstract
It is a kind of to improve the method for wide bar shaped high power semiconductor lasers beam quality, belong to laser technology field.The field known technology is difficult to the beam quality for being effectively improved wide bar shaped high power semiconductor lasers, the application of wide bar shaped high power semiconductor lasers is very limited.The present invention is used applies the method for the tensile stress of convex intensity distribution in wide slab waveguide area, weaken because convex refractive rate caused by the convex Temperature Distribution of waveguide section is distributed, suppress the thermal lensing effect of laser waveguide, so as to improve the beam quality of wide bar shaped high power semiconductor lasers.This method can be applied to the manufacture of all kinds of wide bar shaped high power semiconductor lasers.
Description
Technical field
Improve the method for wide bar shaped high power semiconductor lasers beam quality the present invention relates to a kind of, belong to laser technology
Field.
Background technology
Wide bar shaped high power semiconductor lasers have that power output is high, heat management is simple, the simple advantage of power combing.
Generally width bar shaped high power semiconductor lasers flip-chip is welded in the transition heat sink of high heat conduction, due to larger operating current
Concentrate in light-emitting waveguide area, the used heat that carrier non-radiative recombination is produced causes the Temperature Distribution of waveguide section to be distributed for convex,
Make the effective refractive index in light-emitting waveguide area that convex distribution, the unstability of waveguiding structure when adding laser works is also presented
And beam divergence angle.Generally main epitaxial growth quality, the defect in reduction light-emitting waveguide area, suppression by improving laser material
System is distributed due to refractive index convex caused by used heat, is limited by laser structure epitaxial growth source material and atmosphere purity,
Still suffering from certain fault in material causes beam quality under wide bar shaped high power semiconductor lasers high current condition of work obvious
It is deteriorated.
The content of the invention
The present invention is achieved in that as shown in accompanying drawing 1, by chip of laser (mainly by chip substrate 1, light-emitting waveguide
Area 2, current-limiting layer 3 are constituted) it is welded by solder 6 onto laser transition heat sink 4, it is welded by being introduced in solder side both sides
Cushion block 5 and apply pressure during being welded in the middle part of chip of laser, because solder solidification produces the chip of laser after being welded
Bending, and in the Zhang Yinli distributions of the introducing of light-emitting waveguide area 1 convex.
The technical effects of the invention are that, the Zhang Yinli distributions of convex are introduced in light-emitting waveguide area 1 causes the effective of waveguide
Index distribution adds the index distribution of a spill, it is suppressed that due to thermogenetic convex refractive rate point of giving up during laser works
Cloth, so as to reduce the beam divergence angle of laser high-power operation, improves beam quality.
Brief description of the drawings
Appended Fig. 1 is introduces the wide bar shaped high power semiconductor lasers structural representation of tensile stress, and 1 is light-emitting waveguide
Area, 2 be chip substrate, and 3 be current-limiting layer, and 4 be laser transition heat sink, and 5 be the cushion block that is welded, and 6 be solder.
Embodiment
As shown in Figure 1, chip of laser (is mainly made up of) light-emitting waveguide area 1, chip substrate 2, current-limiting layer 3
It is welded onto laser transition heat sink 4, cushion block 5 and is swashed by introducing to be welded in solder side both sides during being welded by solder 6
Apply pressure in the middle part of light device chip, because solder solidification makes the chip of laser after being welded produce bending, and in light-emitting waveguide area 1
The Zhang Yinli distributions of convex are introduced, because useless thermogenetic convex refractive rate is distributed when suppressing laser works, so as to reduce sharp
The beam divergence angle of light device high-power operation, improves beam quality.
Illustrate the present invention with reference to example, chip of laser is swashed using the 808nm wavelength quantum well structure of 2 millimeters of chamber length
Light device chip, the width in light-emitting waveguide area 1 is 100 microns, and chip substrate 2 is N-GaAs materials 110 microns thick, current limit
Layer 3 is the SiO2 insulating barriers of 120 nanometer thickness, and laser transition heat sink 4 is the Ti/Pt/Au covering AlN bases that thickness is 0.5 millimeter
Piece, the height for the cushion block 5 that is welded is 25 microns, and solder 6 is AuSn solders, by pressing in chip of laser during being welded
Middle part applies 50 grams of pressure.The temperature that is welded is 320 degree, and the atmosphere that is welded is the nitrogen of 99.999% purity, when temperature is reduced to
Chip of laser is completed at less than 50 degree to be welded process.Measured by far-field divergence angle during laser works, show laser
Far-field divergence angle is obviously reduced, and 5.0 degree are reduced to by common 7.5 degree.
Claims (1)
1. a kind of improve the method for wide bar shaped high power semiconductor lasers beam quality, it is characterised in that by wide bar shaped
The light-emitting waveguide area (1) of high power semiconductor lasers chip applies the tensile stress of convex intensity distribution, weakens due to waveguide section
Convex refractive rate caused by convex Temperature Distribution is distributed, and suppresses the thermal lensing effect of laser waveguide, so that it is big to improve wide bar shaped
The beam quality of power semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410674400.0A CN104332823B (en) | 2014-11-20 | 2014-11-20 | It is a kind of to improve the method for wide bar shaped high power semiconductor lasers beam quality |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410674400.0A CN104332823B (en) | 2014-11-20 | 2014-11-20 | It is a kind of to improve the method for wide bar shaped high power semiconductor lasers beam quality |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104332823A CN104332823A (en) | 2015-02-04 |
| CN104332823B true CN104332823B (en) | 2017-08-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410674400.0A Expired - Fee Related CN104332823B (en) | 2014-11-20 | 2014-11-20 | It is a kind of to improve the method for wide bar shaped high power semiconductor lasers beam quality |
Country Status (1)
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015119226A1 (en) * | 2015-11-09 | 2017-05-11 | Osram Opto Semiconductors Gmbh | Semiconductor laser diode |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001127360A (en) * | 1999-10-29 | 2001-05-11 | Nec Corp | Solid laser oscillator |
| JP2004128298A (en) * | 2002-10-04 | 2004-04-22 | Sony Corp | Semiconductor laser element and its manufacturing method |
| EP1721370A2 (en) * | 2004-02-23 | 2006-11-15 | Powerlase Limited | A laser apparatus |
| US20070223549A1 (en) * | 2006-03-23 | 2007-09-27 | Nl Nanosemiconductor Gmbh | High-Power Optoelectronic Device with Improved Beam Quality Incorporating A Lateral Mode Filtering Section |
| CN103219645B (en) * | 2013-04-02 | 2015-05-20 | 大族激光科技产业集团股份有限公司 | Cooling device and laser device for flake laser device gain medium |
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- 2014-11-20 CN CN201410674400.0A patent/CN104332823B/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| CN104332823A (en) | 2015-02-04 |
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