CN104332523B - Tri-mode composite detector based on graphene - Google Patents
Tri-mode composite detector based on graphene Download PDFInfo
- Publication number
- CN104332523B CN104332523B CN201410402836.4A CN201410402836A CN104332523B CN 104332523 B CN104332523 B CN 104332523B CN 201410402836 A CN201410402836 A CN 201410402836A CN 104332523 B CN104332523 B CN 104332523B
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- CN
- China
- Prior art keywords
- graphene
- detector element
- photosensor chip
- microstrip antenna
- detector
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 28
- 229910021389 graphene Inorganic materials 0.000 title claims description 28
- 239000002131 composite material Substances 0.000 title abstract 4
- 239000010408 film Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 20
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims 1
- 238000001228 spectrum Methods 0.000 abstract description 2
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920006332 epoxy adhesive Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 241001132374 Asta Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229920006335 epoxy glue Polymers 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
Abstract
The invention relates to a tri-mode composite detector based on grapheme. The tri-mode detector includes a base at the bottommost layer. A first detector element, a second detector element, and a microstrip are arranged sequentially from bottom to top on the base in a spaced manner. The first detector element is fixed on the base. The two ends of the second detector element and the microstrip are fixed on the base through supports. The microstrip antenna is used for receiving submillimeter waves. The first detector element and the second detector element are used for receiving spectrum radiances of two different wavebands respectively so that the tri-mode composite detector is formed. The composite detector is capable of obtaining more comprehensive target information so that improvement of the anti-interference capability of the detector is facilitated.
Description
Technical field
The present invention relates to a kind of three mould complex detectors based on Graphene, belong to multimode, in multispectral complex probe
Detector technology.
Background technology
Sub-MM Wave Antenna has range resolution ratio height, wave beam width, is suitable to extensive search, intercepts and captures target, and sub- milli
Metric wave can extract the much information such as frequency spectrum, amplitude, phase place, polarization from objective emission ripple, penetrates smog, sand and dust ability strong；With
Microwave is compared, and has higher resolution and tracking accuracy because wave beam is narrow, and antenna size is little, device volume is little, can produce big
Doppler effect, is conducive to differentiating microinching target, but easy electromagnetic wave interference.Infrared and ultraviolet two waveband detects permissible
Obtain the radiation feature in different-waveband for the target simultaneously, be conducive to improving the capacity of resisting disturbance of detector.
It is to obtain a kind of reality of detected target more abundant information and have that submillimeter wave, infrared and ultraviolet are combined
The technological approaches of effect.Require compact conformation, small volume and be coaxially total to visual field in some application systems.Antenna is visited as optics
The window surveying device can achieve that aperture detects altogether, but this antenna must printing opacity.Graphene is the planar being become by carbon atom arrangement
Honeycomb crystal lattice structure, has very high transmitance in infrared and ultraviolet band, and in electric property, mechanical property and leading
Hot property aspect has outstanding performance.It is therefore possible to use Graphene substitutes the metallic film in conventional microstrip antenna, system
The Sub-MM Wave Antenna of standby thoroughly infrared and ultraviolet, its combination with infrared photosensor chip and ultraviolet photosensor chip can realize three moulds
Compound stacked detectors.
Content of the invention
The purpose of the present invention is for providing a kind of three mould complex detectors based on Graphene, in order to solve some detections
Detection accuracy height, compact conformation, the technical problem of small volume is required in system.
For achieving the above object, the solution of the present invention includes a kind of three mould complex detectors based on Graphene, described
Three mould detectors include the pedestal of the bottom, impact faces interval setting first detector element, the second spy successively from down to up
Survey device element and microstrip antenna；Described microstrip antenna is submillimeter wave microstrip antenna, the dielectric base of described microstrip antenna
It is graphene conductive film above piece, the gap that graphene conductive film etches becomes array distribution, in dielectric substrate
On another side, with graphene conductive film, each gap correspondence position is printed with metal feeder.
First detector element is fixed on pedestal, and the two ends of the second detector element and microstrip antenna are fixed by support
On pedestal.
First detector element is infrared photosensor chip, and the second detector element is ultraviolet photosensor chip, described ultraviolet
The spacing of photosensor chip and infrared photosensor chip is 20～100 μm, and the spacing of ultraviolet photosensor chip and dielectric substrate is 20
～100 μm.
The infrared and good insulant of UV-permeable: silicon dioxide or sapphire selected by described dielectric substrate；Described
Metal feeder is made up of chrome gold (cr/au) or copper (cu).
Infrared photosensor chip material therefor is insb, hgcdte or super crystal lattice material；Used by described ultraviolet photosensor chip
Material is sic, zno, cds, diamond film or alxga1-xN material, wherein, 0≤x≤1.
Described graphene conductive film is 2-8 layer graphene thin film.
Technical scheme, by combining microstrip antenna and different light-sensitive elements, constitutes one and is based on
Three mould complex detectors of Graphene.Microstrip antenna can receive submillimeter wave, and different light-sensitive elements can obtain target again
In the radiation characteristic of different-waveband, more comprehensive object information can be obtained, be conducive to improving the capacity of resisting disturbance of detector.
In addition, the graphene film that the conductive film of microstrip antenna uses, there is very high transmission in infrared and ultraviolet band
Rate, when the ray including infrared, ultraviolet light and submillimeter wave injects this three moulds detector, first passes around Graphene micro-strip sky
Line, receives to submillimeter wave, because this microstrip antenna integrally has good transmitance to infrared, ultraviolet light, so thereafter
The light-sensitive element of setting can detect to ultraviolet, infrared light；And uv-sensitive component is well saturating using having to medium-wave infrared
The material crossed is made, and therefore while receiving ultraviolet radioactive, the reception on infrared optical sensor thereafter affects less；By Asia
Millimeter wave, infrared and ultraviolet combine and can obtain abundant target property information.
Brief description
Fig. 1 is the side view of three mould complex detectors in the embodiment of the present invention；
Fig. 2 is the top view of three mould complex detectors in the embodiment of the present invention；
In figure 1- dielectric substrate, 2- conductive film, 3- metal feeder, 4- ultraviolet photosensor chip, 5- medium-wave infrared light
Quick chip, 6- support, 7- pedestal.
Specific embodiment
The three mould complex detectors based on Graphene of the present invention, including the pedestal 7 of the bottom, pedestal 7 above by
Under to upper the first detector element 5 of interval setting successively, the second detector element 4 and microstrip antenna, the first detector 5 element is solid
It is scheduled on pedestal 7, the two ends of the second detector element 4 are fixed on pedestal 7 by inner support, the two ends of microstrip antenna are by outer
Support is fixed on pedestal.
The present invention will be further described in detail below in conjunction with the accompanying drawings.
Fig. 1, Fig. 2 show the three moulds spies that a kind of submillimeter wave microstrip antenna, ultraviolet detector and Infrared Detectorss are combined
Survey device, be conductive film above the dielectric substrate of microstrip antenna, the gap that conductive film etches becomes array distribution,
On dielectric substrate another side, with conductive film, each gap correspondence position is printed with metal feeder；Microstrip antenna exhausted
Edge dielectric substrate 1 is made up of 0.2 millimeter of sapphire of thickness, and conductive film 2 is the graphene film of two-layer or multilamellar, leads
The slot pattern etching on conductive film is 4 × 4 element array figures；The material of metal feeder 3 selects chrome gold, and support 6 is two
Group, relatively low for inner support, higher for support arm, support arm is enclosed within outside inner support, and the height of inner support is 30 μm, support arm
Height be 60 μm.And the lower end of two supports 6 is attached on pedestal 7 by Wear Characteristics of Epoxy Adhesive.Epoxy is passed through at the two ends of microstrip antenna
On support arm, the two ends of ultraviolet photosensor chip 4 are attached on inner support by Wear Characteristics of Epoxy Adhesive, medium-wave infrared photosensor chip for glue
5 are affixed directly on pedestal 7 by epoxy glue.The mid frequency of Antenna Operation is 85ghz.
Medium-wave infrared photosensor chip 5 is single-element detector, and material therefor is insb.The making material of medium-wave infrared photosensor chip
Material can also be hgcdte or super crystal lattice material, and its structure can also be four-quadrant or alignment structure.Ultraviolet photosensor chip 4 is single
First detector, material therefor is sic material, and its making material can also be zno, cds, diamond film or alxga1-xN material (0
≤x≤1).
Dielectric substrate material is chosen at the infrared material with ultraviolet band with good transmitance, can be titanium dioxide
Silicon, Afluon (Asta) or spinelle etc., the metal feeder 3 described in the present invention chooses the good metal material of electric conductivity, such as chrome gold
Or chromium/aluminum (cr/al) etc. (cr/au).
On provide a kind of specific embodiment, but the present invention is not limited to described embodiment.The base of the present invention
This thinking is such scheme, for those of ordinary skill in the art, according to the teachings of the present invention, designs various modifications
Model, formula, parameter do not need to spend creative work.Without departing from the principles and spirit of the present invention to enforcement
Change, modification, replacement and modification that mode is carried out still fall within protection scope of the present invention.
Claims (6)
1. a kind of three mould complex detectors based on Graphene are it is characterised in that three described mould complex detectors include bottom
The pedestal of layer, impact faces interval setting first detector element, the second detector element and microstrip antenna successively from down to up；
Described microstrip antenna is submillimeter wave microstrip antenna, is that graphene conductive is thin above the dielectric substrate of described microstrip antenna
Film, gap that graphene conductive film etches becomes array distribution, in dielectric substrate another side, thin with graphene conductive
On film, each gap correspondence position is printed with metal feeder.
2. the three mould complex detectors based on Graphene according to claim 1 are it is characterised in that the first detector element
It is fixed on pedestal, the two ends of the second detector element and microstrip antenna are fixed on pedestal by support.
3. the three mould complex detectors based on Graphene according to claim 1 are it is characterised in that the first detector element
For infrared photosensor chip, the second detector element is ultraviolet photosensor chip, described ultraviolet photosensor chip and infrared photosensor chip
Spacing be 20～100 μm, the spacing of ultraviolet photosensor chip and dielectric substrate is 20～100 μm.
4. the three mould complex detectors based on Graphene according to claim 1 are it is characterised in that described dielectric base
Piece selects the infrared and good insulant of UV-permeable: silicon dioxide or sapphire；Described metal feeder is by chrome gold (cr/au)
Or copper (cu) makes.
5. the three mould complex detectors based on Graphene according to claim 3 are it is characterised in that infrared photosensor chip institute
It is insb, hgcdte or super crystal lattice material with material；Described ultraviolet photosensor chip material therefor is sic, zno, cds, Buddha's warrior attendant
Stone film or alxga1-xN material, wherein, 0≤x≤1.
6. the three mould complex detectors based on Graphene according to claim 1 are it is characterised in that described graphene conductive
Thin film is 2-8 layer graphene thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410402836.4A CN104332523B (en) | 2014-08-15 | 2014-08-15 | Tri-mode composite detector based on graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410402836.4A CN104332523B (en) | 2014-08-15 | 2014-08-15 | Tri-mode composite detector based on graphene |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104332523A CN104332523A (en) | 2015-02-04 |
| CN104332523B true CN104332523B (en) | 2017-01-18 |
Family
ID=52407215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410402836.4A Active CN104332523B (en) | 2014-08-15 | 2014-08-15 | Tri-mode composite detector based on graphene |
Country Status (1)
| Country | Link |
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| CN (1) | CN104332523B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711241B (en) * | 2016-12-21 | 2018-04-17 | 西安交通大学 | A kind of graphene transparent electrode diamond base ultraviolet detector and preparation method thereof |
| CN108630667B (en) * | 2017-03-23 | 2020-04-28 | 中国空空导弹研究院 | Infrared detector |
| CN107271042A (en) * | 2017-04-27 | 2017-10-20 | 中国空空导弹研究院 | A kind of detector crosstalk measuring device, its preparation method and crosstalk measuring method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0797256A2 (en) * | 1996-03-19 | 1997-09-24 | HE HOLDINGS, INC. dba HUGHES ELECTRONICS | Three band and four band multispectral structures having two simultaneous signal outputs |
| CN101419996A (en) * | 2008-12-04 | 2009-04-29 | 中国电子科技集团公司第十三研究所 | Infrared-ultraviolet multi-color detector and production process thereof |
| CN102741164A (en) * | 2009-12-15 | 2012-10-17 | 格尔德殿工业公司 | Large area deposition of graphene on substrates, and products including the same |
| CN102856628A (en) * | 2011-03-08 | 2013-01-02 | 中国空空导弹研究院 | Conformal antenna for millimeter wave/infrared dual mode composite detection |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7561107B2 (en) * | 2006-09-07 | 2009-07-14 | Intelleflex Corporation | RFID device with microstrip antennas |
| CN102074803A (en) * | 2009-11-20 | 2011-05-25 | 联想(北京)有限公司 | Microstrip-fed slot antenna and mobile terminal |
| CN102738572A (en) * | 2012-06-06 | 2012-10-17 | 东南大学 | Broadband directional microstrip patch antenna |
-
2014
- 2014-08-15 CN CN201410402836.4A patent/CN104332523B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0797256A2 (en) * | 1996-03-19 | 1997-09-24 | HE HOLDINGS, INC. dba HUGHES ELECTRONICS | Three band and four band multispectral structures having two simultaneous signal outputs |
| CN101419996A (en) * | 2008-12-04 | 2009-04-29 | 中国电子科技集团公司第十三研究所 | Infrared-ultraviolet multi-color detector and production process thereof |
| CN102741164A (en) * | 2009-12-15 | 2012-10-17 | 格尔德殿工业公司 | Large area deposition of graphene on substrates, and products including the same |
| CN102856628A (en) * | 2011-03-08 | 2013-01-02 | 中国空空导弹研究院 | Conformal antenna for millimeter wave/infrared dual mode composite detection |
Non-Patent Citations (1)
| Title |
|---|
| Material Region Division and Antenna Application of Monolayer and Multilayer Graphene;Bian Wu, Yang Hao;《The 8th European Conference on Antennas and Propagation (EuCAP 2014)》;20140411;参见摘要、第497页左栏倒数第10-14行、第498页左栏第1-5行，图2 * |
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|---|---|
| CN104332523A (en) | 2015-02-04 |
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Effective date of registration: 20211022 Address after: 201306 room A206, building 1, No. 336, Tianjiao Road, Lingang xinpian District, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: AVIC Kaimai (Shanghai) Infrared Technology Co.,Ltd. Address before: 471009 No. 166, Jiefang Road, Henan, Luoyang Patentee before: CHINA AIRBORNE MISSILE ACADEMY |
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