CN104319342A - Led filament - Google Patents
Led filament Download PDFInfo
- Publication number
- CN104319342A CN104319342A CN201410564180.6A CN201410564180A CN104319342A CN 104319342 A CN104319342 A CN 104319342A CN 201410564180 A CN201410564180 A CN 201410564180A CN 104319342 A CN104319342 A CN 104319342A
- Authority
- CN
- China
- Prior art keywords
- fluorescent
- adhesive layer
- led
- fluorescent adhesive
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
An LED filament comprises a transparent substrate and LED wafers arranged on the transparent substrate. The LED wafers are electrically connected through metal wires to form a closed circuit, a fluorescent adhesive layer is formed in a physical or chemical mode on one wafer fixing side of the substrate, the LED wafers are fixedly arranged on the fluorescent adhesive layer and completely located within the range of the fluorescent adhesive layer, and a fluorescent adhesive coating layer is formed on the wafers in an adhesive dispensing or die pressing mode and completely wraps the LED wafers and the wires. According to the LED filament, the wafers are fixedly arranged on the fluorescent adhesive layer formed on the wafer fixing side of the transparent substrate, the fluorescent adhesive coating layer is formed on the wafers in an adhesive dispensing or die pressing mode, the dosage of fluorescent powder and adhesive can be reduced, and the material cost is reduced; and the side of the filament is free of blue leakage.
Description
Technical field
The present invention relates to LED, particularly relate to the LED silk of 360 ° of full angle luminescences.
Background technology
LED silk can realize 360 ° of full angle luminescences, and without the need to installing the optics of lens and so on additional, can be applicable to the illuminating products such as crystal pendant lamp, candle lamp, bulb lamp, wall lamp, brings unprecedented lighting experience.
The existing LED silk product be made up of the transparency carrier such as sapphire, glass, luminous in order to realize all-round light, the surrounding mold pressing fluorescent glue at transparency carrier filament or the front and back at transparency carrier filament is needed to carry out two-sided glue, but mold pressing fluorescent glue or substrate two-sided some fluorescent glue mode, processing procedure is loaded down with trivial details, material amounts is large, and cost is high, and the filament device side of substrate two-sided glue easily occurs leaking blue phenomenon.
Summary of the invention
In view of this, provide a kind of fluorescent glue consumption few and effectively can avoid Lou blue LED silk.
A kind of LED silk, comprise transparency carrier and be arranged at the LED wafer on transparency carrier, described LED wafer is electrically connected by plain conductor and forms path, the one side of described substrate die bond is formed with fluorescent adhesive layer by the mode of physics or chemistry, described LED wafer to be fixedly arranged on fluorescent adhesive layer and to be positioned at fluorescent adhesive layer scope completely, described wafer is formed with fluorescent glue coating layer, the complete coated described LED wafer of described fluorescent glue coating layer and wire by some glue or mold pressing.
Further, described substrate is sapphire, high polymer, pottery or glass, and the thickness of described fluorescent adhesive layer is more than 0.03mm.
Further, the area of described fluorescent adhesive layer is less than or equal to the area of the one side of substrate die bond, and described fluorescent adhesive layer exceeds or do not exceed the scope of fluorescent glue coating layer.
Further, described fluorescent adhesive layer is the mixture of silica gel, epoxy resin and fluorescent material.
Further, described fluorescent glue coating layer is the mixture of silica gel, epoxy resin and fluorescent material.
Compared to prior art, the fluorescent adhesive layer that LED silk of the present invention is shaping on the die bond face of transparency carrier is installed with wafer, then forms described fluorescent glue coating layer at wafer upper point glue or mold pressing, fluorescent material, glue consumption can be reduced, reduce Material Cost; And filament side is without the blue phenomenon of leakage.
Accompanying drawing explanation
Fig. 1 is the structural representation of LED silk of the present invention.
Fig. 2 is another angular views of LED silk of the present invention.
Fig. 3 is the cutaway view of LED silk of the present invention along the III-III line of Fig. 1.
Embodiment
Below with reference to the drawings and the specific embodiments, the present invention is described in detail.
As shown in Figure 1, Figure 2 and shown in Fig. 3, LED silk of the present invention comprises substrate 10, fluorescent adhesive layer 20, LED wafer 30, wire 40 and fluorescent glue coating layer 50.
Described substrate 10 can be the transparency carrier that sapphire, high polymer, pottery or glass etc. are made, described substrate 10 forms described fluorescent adhesive layer 20 by the mode such as physics, chemistry in the one side of die bond, described fluorescent adhesive layer 20 is the mixture of silica gel, epoxy resin or other stickums and fluorescent material, thickness is more than 0.03mm, its area can be equal to or less than the area of the one side of substrate 10 die bond, thus with the one side of all or part of covered substrate 10 die bond.In the present embodiment, the area of described fluorescent adhesive layer 20 is slightly less than the area of the side of the die bond of substrate 10, and the edge of substrate 10 is not covered by fluorescent adhesive layer 20.
Described LED wafer 30 is fixedly arranged on fluorescent adhesive layer 20, the size of wafer 30 is not more than the size of fluorescent adhesive layer 20, wafer 30 to be positioned at completely on fluorescent adhesive layer 20 and not to exceed the scope of fluorescent adhesive layer 20, described wafer 30 can be single or multiple, LED path is connected to form by described wire 40, described wire 40 is the plain conductor 40 of conduction, as gold thread etc.After described LED wafer 30 is fixedly arranged in fluorescent adhesive layer 20, described fluorescent glue coating layer 50 is formed at wafer 30 upper point glue or mold pressing, described fluorescent adhesive layer 20 can exceed or not exceed the scope of fluorescent glue coating layer 50, in the present embodiment, not by the part that fluorescent adhesive layer 20 covers on the side of the die bond of the complete coated described LED wafer 30 of described fluorescent glue coating layer 50, wire 40 and substrate 10, thus make LED silk device of the present invention.Fluorescent glue coating layer 50 on described wafer 30 can be identical with fluorescent adhesive layer 20 component bottom wafer 30, also can be different.
Fluorescent adhesive layer 20 shaping on transparency carrier 10 die bond face is installed with wafer 30 in the present invention, then forms described fluorescent glue coating layer 50 at wafer 30 upper point glue or mold pressing, can reduce fluorescent material, glue consumption, reduce Material Cost; And filament side is without the blue phenomenon of leakage.It should be noted that; the present invention is not limited to above-mentioned execution mode, and according to creative spirit of the present invention, those skilled in the art can also make other changes; these changes done according to creative spirit of the present invention, all should be included within the present invention's scope required for protection.
Claims (5)
1. a LED silk, comprise transparency carrier and be arranged at the LED wafer on transparency carrier, described LED wafer is electrically connected by plain conductor and forms path, it is characterized in that: the one side of described substrate die bond is formed with fluorescent adhesive layer by the mode of physics or chemistry, described LED wafer to be fixedly arranged on fluorescent adhesive layer and to be positioned at fluorescent adhesive layer scope completely, described wafer is formed with fluorescent glue coating layer, the complete coated described LED wafer of described fluorescent glue coating layer and wire by some glue or mold pressing.
2. LED silk as claimed in claim 1, it is characterized in that, described substrate is sapphire, high polymer, pottery or glass, and the thickness of described fluorescent adhesive layer is more than 0.03mm.
3. LED silk as claimed in claim 1, it is characterized in that, the area of described fluorescent adhesive layer is less than or equal to the area of the one side of substrate die bond, and described fluorescent adhesive layer exceeds or do not exceed the scope of fluorescent glue coating layer.
4. as the LED silk in claim 1-3 as described in any one, it is characterized in that, described fluorescent adhesive layer is the mixture of silica gel, epoxy resin and fluorescent material.
5. as the LED silk in claim 1-3 as described in any one, it is characterized in that, described fluorescent glue coating layer is the mixture of silica gel, epoxy resin and fluorescent material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410564180.6A CN104319342A (en) | 2014-10-21 | 2014-10-21 | Led filament |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410564180.6A CN104319342A (en) | 2014-10-21 | 2014-10-21 | Led filament |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104319342A true CN104319342A (en) | 2015-01-28 |
Family
ID=52374547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410564180.6A Pending CN104319342A (en) | 2014-10-21 | 2014-10-21 | Led filament |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104319342A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355753A (en) * | 2015-10-31 | 2016-02-24 | 嘉兴市上村电子有限公司 | LED filament based on glass substrate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203367278U (en) * | 2013-07-18 | 2013-12-25 | 深圳市斯迈得光电子有限公司 | White light LED light source device |
| CN103855273A (en) * | 2013-12-05 | 2014-06-11 | 深圳市瑞丰光电子股份有限公司 | LED lamp substrate and manufacturing process thereof |
| CN103972369A (en) * | 2014-05-26 | 2014-08-06 | 苏州东山精密制造股份有限公司 | LED (Light Emitting Diode) lamp bar and manufacturing method thereof |
| CN203787423U (en) * | 2014-01-14 | 2014-08-20 | 四川品龙光电科技有限公司 | LED light emitting device |
| CN204333016U (en) * | 2014-10-21 | 2015-05-13 | 深圳市瑞丰光电子股份有限公司 | LED silk |
-
2014
- 2014-10-21 CN CN201410564180.6A patent/CN104319342A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203367278U (en) * | 2013-07-18 | 2013-12-25 | 深圳市斯迈得光电子有限公司 | White light LED light source device |
| CN103855273A (en) * | 2013-12-05 | 2014-06-11 | 深圳市瑞丰光电子股份有限公司 | LED lamp substrate and manufacturing process thereof |
| CN203787423U (en) * | 2014-01-14 | 2014-08-20 | 四川品龙光电科技有限公司 | LED light emitting device |
| CN103972369A (en) * | 2014-05-26 | 2014-08-06 | 苏州东山精密制造股份有限公司 | LED (Light Emitting Diode) lamp bar and manufacturing method thereof |
| CN204333016U (en) * | 2014-10-21 | 2015-05-13 | 深圳市瑞丰光电子股份有限公司 | LED silk |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355753A (en) * | 2015-10-31 | 2016-02-24 | 嘉兴市上村电子有限公司 | LED filament based on glass substrate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150128 |
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| RJ01 | Rejection of invention patent application after publication |