CN104311037B - Ultralow dielectric microwave dielectric ceramic AlSi3v3n10and preparation method thereof - Google Patents
Ultralow dielectric microwave dielectric ceramic AlSi3v3n10and preparation method thereof Download PDFInfo
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- CN104311037B CN104311037B CN201410565671.2A CN201410565671A CN104311037B CN 104311037 B CN104311037 B CN 104311037B CN 201410565671 A CN201410565671 A CN 201410565671A CN 104311037 B CN104311037 B CN 104311037B
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
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Abstract
The invention discloses a kind of ultralow dielectric microwave dielectric ceramic AlSi3V3N10And preparation method thereof.(1) be 99.9%(percentage by weight by purity) more than AlN, Si3N4And V3N5Starting powder press AlSi3V3N10Composition weigh dispensing;(2) by step (1) raw material wet ball-milling mix 12 hours, ball-milling medium is absolute ethyl alcohol, after drying in 1200 DEG C of nitrogen atmospheres pre-burning 6 hours;(3) the re-compacted shaping of powder prepared in step (2), finally sinters 8 hours in 1350 ~ 1400 DEG C of nitrogen atmospheres.Pottery prepared by the present invention is good at sintering, and dielectric constant reaches 5.2~5.7, and its quality factor q f value is up to 131000-162000GHz, and temperature coefficient of resonance frequency is little, industrially has great using value.
Description
Technical field
The present invention relates to dielectric ceramic material, particularly relate to for manufacturing ceramic substrate, the resonance that microwave frequency uses
Dielectric ceramic materials of microwave device such as device and wave filter and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material
And complete the pottery of one or more functions, modern communication is widely used as resonator, wave filter, dielectric substrate and medium
The components and parts such as wave circuit, are the key foundation materials of modern communication technology, in portable mobile phone, automobile telephone, nothing
The aspect such as rope phone, telstar recipient and military radar has highly important application, small-sized at modern communication instrument
Change, integrated during just playing increasing effect.
It is applied to the dielectric ceramic of microwave frequency band, should meet the requirement of following dielectric property: (1) seriation permittivity εr
To adapt to different frequency and the requirement of different application occasion;(2) high quality factor q value or dielectric loss tan δ make an uproar to reduce
Sound, typically requires Qf >=3000 GHz;(3) the temperature coefficient τ of resonant frequencyƒThe least to ensure the heat that device has had
Stability, general requirement-10 ppm/DEG C≤τƒ≤+10 ppm/℃.Just have tried to from late 1930s in the world by
Dielectric substance is applied to microwave technology, and prepares TiO2Microwave dielectric filter, but its temperature coefficient of resonance frequency τƒToo
Greatly cannot be practical.Since the seventies in last century, start the large-scale development to medium ceramic material, according to
Relative dielectric constant εrSize different from use frequency range, generally can have been developed that and the microwave-medium ceramics developed
It is divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al2O3-TiO2、Y2BaCuO5、MgAl2O4With
Mg2SiO4Deng, its εr≤ 20, quality factor q × f >=50000GHz, τƒ≤10 ppm/°C.It is mainly used in microwave base plate and height
End microwave device.
(2) low εrWith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta2O5, BaO-ZnO-Ta2O5Or BaO-
MgO-Nb2O5,BaO-ZnO-Nb2O5System or the hybrid system MWDC material between them.Its εr=20~35, Q=(1~2) ×
104(under the GHz of f >=10), τƒ≈0.As medium in the microwave communication equipments such as the direct broadcasting satellite being mainly used in f >=8 GHz
Resonating device.
(3) medium εrWith the microwave dielectric ceramic of Q value, it is mainly with BaTi4O9、Ba2Ti9O20(Zr, Sn) TiO4Etc. for
The MWDC material of base, its εr=35 ~ 45, Q=(6~9) × 103(under f=3~-4GHz), τƒ≤5 ppm/°C.It is mainly used in 4
~8 in microwave military radar in GHz frequency range and communication system as dielectric resonance device.
(4) high εrAnd the microwave dielectric ceramic that Q value is relatively low, in being mainly used in 0.8~4GHz frequency range, civilian movement is led to
News system, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, Kolar, Kato et al. in succession find and have studied
Perovskite-like tungsten bronze type BaO Ln2O3—TiO2Series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), composite perofskite
Structure C aO Li2O—Ln2O3—TiO2Series, lead base series material, Ca1-xLn2x/3TiO3It is contour εrMicrowave dielectric ceramic,
The wherein BaO Nd of BLT system2O3—TiO2Material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO3Dielectric constant reaches
To 105.
Three performance indications (ε due to microwave dielectric ceramicrWith Q f and τƒBetween) be mutually restriction relation (see
Document: the restricting relation between microwave dielectric ceramic materials dielectric properties, Zhu Jianhua, Liang Fei, Wang little Hong, Lv Wenzhong, electronic component
With material, phase March the 3rd in 2005), meet three performance requirements and the single-phase microwave-medium ceramics of low temperature sintering is considerably less,
Mainly their temperature coefficient of resonance frequency is the most excessive or quality factor are on the low side and cannot application request.The most right
The research major part of microwave-medium ceramics is the summary of experience drawn by great many of experiments, does not but have complete theory to illustrate
Microstructure and the relation of dielectric properties, therefore, the most also cannot predict its resonance from the composition of compound with structure
The microwave dielectric property such as frequency-temperature coefficient and quality factor, which greatly limits microwave-medium ceramics and device
Development.
Summary of the invention
It is an object of the invention to provide and a kind of there is good heat endurance and low-loss ultralow dielectric microwave be situated between
Electroceramics material and preparation method thereof.
The chemical composition of the microwave dielectric ceramic material of the present invention is AlSi3V3N10。
The preparation method step of this microwave dielectric ceramic material is:
(1) be 99.9%(percentage by weight by purity) more than AlN, Si3N4And V3N5Starting powder press AlSi3V3N10
Composition weigh dispensing.
(2) being mixed 12 hours by step (1) raw material wet ball-milling, ball-milling medium is absolute ethyl alcohol, at 1200 DEG C after drying
Pre-burning 6 hours in nitrogen atmosphere.
(3) the re-compacted shaping of powder prepared in step (2), finally sinters 8 little in 1350 ~ 1400 DEG C of nitrogen atmospheres
Time.
Advantages of the present invention: AlSi3V3N10Ceramic dielectric constant reaches 5.2~5.7, the temperature coefficient τ of its resonant frequencyƒ
Little, temperature stability is good;Quality factor q f value is up to 131000-162000GHz, can be widely used for various medium substrate, resonance
The manufacture of the microwave device such as device and wave filter, can meet the technology needs of low temperature co-fired technology and microwave multilayer device, in industry
On have great using value.
Detailed description of the invention
Embodiment:
Table 1 shows 3 specific embodiments and the microwave dielectric property thereof of the different sintering temperatures constituting the present invention.Its system
Preparation Method as it has been described above, carry out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.
This pottery can be widely used for the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet shifting
The technology of the systems such as dynamic communication and satellite communication needs.
Table 1:
Claims (1)
1. a temperature-stable ultralow dielectric nitride microwave dielectric ceramic, it is characterised in that described microwave dielectric ceramic
Chemical composition be: AlSi3V3N10;
The preparation method of described microwave dielectric ceramic concretely comprises the following steps:
(1) be 99.9%(percentage by weight by purity) more than AlN, Si3N4And V3N5Starting powder press AlSi3V3N10Group
Become to weigh dispensing;
(2) being mixed 12 hours by step (1) raw material wet ball-milling, ball-milling medium is absolute ethyl alcohol, at 1200 DEG C of nitrogen after drying
Pre-burning 6 hours in atmosphere;
(3) the re-compacted shaping of powder prepared in step (2), finally sinters 8 hours in 1350 ~ 1400 DEG C of nitrogen atmospheres.
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Citations (2)
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CN103130496A (en) * | 2013-03-25 | 2013-06-05 | 桂林理工大学 | Low-dielectric-constant microwave dielectric ceramic LiAlSi2O6 and preparation method thereof |
CN103964835A (en) * | 2014-04-27 | 2014-08-06 | 桂林理工大学 | Temperature-stable microwave dielectric ceramic LiVP2O8 capable of being sintered at low temperature, and preparation method of ceramic |
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CN103130496A (en) * | 2013-03-25 | 2013-06-05 | 桂林理工大学 | Low-dielectric-constant microwave dielectric ceramic LiAlSi2O6 and preparation method thereof |
CN103964835A (en) * | 2014-04-27 | 2014-08-06 | 桂林理工大学 | Temperature-stable microwave dielectric ceramic LiVP2O8 capable of being sintered at low temperature, and preparation method of ceramic |
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