CN104300091A - Oled device packaging structure and manufacturing method thereof - Google Patents
Oled device packaging structure and manufacturing method thereof Download PDFInfo
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- CN104300091A CN104300091A CN201410475529.9A CN201410475529A CN104300091A CN 104300091 A CN104300091 A CN 104300091A CN 201410475529 A CN201410475529 A CN 201410475529A CN 104300091 A CN104300091 A CN 104300091A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 238000004806 packaging method and process Methods 0.000 title abstract 5
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 15
- 239000004793 Polystyrene Substances 0.000 claims description 33
- 229920002223 polystyrene Polymers 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 26
- 239000008187 granular material Substances 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- 239000000839 emulsion Substances 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 229920000058 polyacrylate Polymers 0.000 claims description 16
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 238000007720 emulsion polymerization reaction Methods 0.000 claims description 7
- 238000011065 in-situ storage Methods 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000007385 chemical modification Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 claims description 4
- 239000012153 distilled water Substances 0.000 claims description 4
- 229920005570 flexible polymer Polymers 0.000 claims description 4
- 239000002861 polymer material Substances 0.000 claims description 4
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 4
- 235000019394 potassium persulphate Nutrition 0.000 claims description 4
- 238000010992 reflux Methods 0.000 claims description 4
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 claims description 4
- LTOKKZDSYQQAHL-UHFFFAOYSA-N trimethoxy-[4-(oxiran-2-yl)butyl]silane Chemical compound CO[Si](OC)(OC)CCCCC1CO1 LTOKKZDSYQQAHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000005050 vinyl trichlorosilane Substances 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 48
- 239000010408 film Substances 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- -1 steam Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Laminated Bodies (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of displaying, and discloses an OLED device packaging structure and a manufacturing method thereof to solve the problems that according to an OLED structure in the prior art, an OLED working layer is damaged easily in the process of manufacturing a barrier layer, and an OLED device is out of operation. The OLED device packaging structure comprises an upper substrate and a lower substrate, an OLED working layer is arranged between the upper substrate and the lower substrate, a packaging layer is arranged on the surface of the OLED working layer and attached to the inner surface of the upper substrate and the inner surface of the lower substrate, and moisture barrier layers are arranged on the outer surface of the upper substrate and the outer surface of the lower substrate. The OLED device packaging structure and the manufacturing method thereof are used in liquid crystal displays.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of OLED encapsulating structure and preparation method thereof.
Background technology
Organic electroluminescent LED (Organic Light-Emitting Diode, OLED), OLED display compared with LCD display device, have thin, light, wide viewing angle, active illuminating, glow color continuously adjustabe, cost are low, fast response time, energy consumption are little, driving voltage is low, operating temperature range is wide, production technology is simple, luminous efficiency advantages of higher.Because OLED display has the incomparable advantage of other displays, there is fine application prospect, therefore obtain the very big concern of industrial circle and scientific circles.
OLED comprises upper and lower substrate, anode, organic thin film layer, negative electrode, OLED working lining, encapsulated layer etc.Due to electronics will be injected from negative electrode when OLED works, this just requires that cathode work function number is more low better, but, for making the material normally metal of negative electrode, the metals such as such as aluminium, magnesium, calcium, because these metals are general relatively more active, are easy to and permeate the steam generation chemical reaction of coming in, causing OLED disabler.Therefore must encapsulate OLED, become to separate with the steam in air, oxygen etc. to make each functional layer of OLED.
At present, be typically employed between the encapsulated layer of OLED and substrate and barrier layer is set, to stop the infiltration of the composition such as steam, oxygen.Because barrier layer must be attached to the surface of encapsulated layer, therefore in the process making barrier layer, be easy to the damage causing OLED working lining, cause OLED to lose efficacy.
Summary of the invention
Embodiments of the invention provide a kind of OLED encapsulating structure and preparation method thereof, being easy to cause OLED working lining to damage, causing the problem that OLED lost efficacy to solve OLED structure of the prior art when making barrier layer.
For achieving the above object, embodiments of the invention adopt following technical scheme:
A kind of OLED encapsulating structure, comprise upper and lower substrate, OLED working lining is provided with between described upper and lower substrate, described OLED working lining surface is provided with encapsulated layer, described encapsulated layer is fitted with the inner surface of described upper and lower substrate respectively, and the outer surface of described upper and lower substrate is equipped with water vapor barrier layer.
Wherein, described water vapor barrier layer comprises the micrometer structure layer of fitting with described upper substrate or infrabasal plate, and described micrometer structure layer is provided with array pattern, described array pattern is coated with the nanostructured layers with water-proof function.
Preferably, described array pattern is concaveconvex structure; Described concaveconvex structure comprises groove, and the longitudinal inner surface of described groove is rectangle or trapezoidal.
Wherein, the material of described micrometer structure layer is Polyacrylate materials, and described polyacrylate material comprises negativity polyacrylate organic film material.
Preferably, described nanostructured layers is granules of polystyrene coating or the silica dioxide granule coating through hydrophobization process.
Further, described upper and lower substrate is the flexible base, board of flexible polymer material.
Wherein, the material of described flexible base, board is PET or PBT.
Make a method for above-mentioned OLED encapsulating structure, all make described water vapor barrier layer at the outer surface of described upper and lower substrate and comprise the following steps:
The first, select negativity polyacrylate organic film material to make micrometer structure layer, then on described micrometer structure layer, obtain described array pattern by typography in photoetching process or face;
The second, obtain polystyrene emulsion by the method for in-situ emulsion polymerization, described polystyrene emulsion is coated in the Surface Creation granules of polystyrene of described array pattern; Or, select silicon dioxide by the method for Plasma-CVD by the surface of array pattern described in silica dioxide granule plated film.
Wherein, obtain polystyrene emulsion by the method for in-situ emulsion polymerization, the Surface Creation granules of polystyrene described polystyrene emulsion being coated in described array pattern comprises the following steps:
The mixture of 100 parts of styrene, 6 parts of acrylic acid and 1000 parts of distilled water is added in the four neck flasks being furnished with reflux condensing tube, thermometer, blender; Stir, stir speed (S.S.) is 300 rpm, logical nitrogen 2 minutes in whipping process; Add 1 part of potassium peroxydisulfate initator; Then under nitrogen protection, in 70 DEG C of water-baths, reaction obtains polystyrene emulsion in 30 minutes; By the described polystyrene emulsion that is obtained by reacting by the method uniform fold of rotary coating on described array pattern, 30 seconds vacuumize time, vacuumize temperature is 50 DEG C, and vacuum values is 26Pa;
Silicon dioxide is selected to be comprised the following steps on the surface of array pattern described in silica dioxide granule plated film by the method for Plasma-CVD:
Within 1 minute, super-hydrophobicity interface is obtained by being coated with silicon dioxide substrate chemical modification in the hexane solution of 1.0 wt% silane couplers.
Preferably, silane coupler comprises γ-methacryloxypropyl-trimethoxy silane, vinyl trichlorosilane, γ-glycidylpropyl-trimethoxy silane.
In OLED encapsulating structure that the embodiment of the present invention provides and preparation method thereof; because the outer surface of upper and lower substrate is equipped with water vapor barrier layer; this water vapor barrier layer can stop steam, oxygen enters OLED working lining, OLED working lining is played to the effect of protection.Because water vapor barrier layer is arranged on the outer surface of upper and lower substrate, so avoid destruction to encapsulated layer when making water vapor barrier layer, thus it is damaged and the situation that OLED lost efficacy occurs to avoid OLED working lining.
Accompanying drawing explanation
The schematic cross-section of a kind of OLED encapsulating structure that Fig. 1 provides for the embodiment of the present invention;
Fig. 2 is the enlarged drawing of part A in Fig. 1.
Embodiment
Below in conjunction with accompanying drawing, the embodiment of the present invention is described in detail.
In the description of this specification, specific features, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
See Fig. 1, embodiments provide a kind of OLED encapsulating structure, this structure comprises upper and lower substrate (11,12), upper and lower substrate is provided with OLED working lining 13 between (11,12), OLED working lining 13 surface is provided with encapsulated layer 14, encapsulated layer 14 is fitted with the inner surface of upper and lower substrate (11,12) respectively, and the outer surface of upper and lower substrate (11,12) is equipped with water vapor barrier layer 15.
In the OLED encapsulating structure that the embodiment of the present invention provides; because the outer surface of upper and lower substrate (11,12) is equipped with water vapor barrier layer 15; this water vapor barrier layer 15 can stop steam, oxygen enters OLED working lining 13, OLED working lining is played to the effect of protection.Because water vapor barrier layer is arranged on the outer surface of upper and lower substrate (11,12), so avoid destruction to encapsulated layer 14 when making water vapor barrier layer 15, thus it is damaged and the situation that OLED lost efficacy occurs to avoid OLED working lining 13.
See Fig. 2, particularly, in above-described embodiment, water vapor barrier layer 15 can comprise the micrometer structure layer 21 of fitting with upper substrate 11 or infrabasal plate 12, micrometer structure layer 21 is provided with array pattern 211, the blocking effect with micrometer structure layer 21 pairs of steam of array pattern 211 or oxygen is better, and, array pattern 211 is coated with the nanostructured layers 22 with water-proof function, improve the anti-steam function of water vapor barrier layer 15 further, the injured probability of OLED working lining 13 is reduced, thus ensure that the function of OLED did not lose efficacy.
Wherein, array pattern 211 can be concaveconvex structure; Concaveconvex structure can comprise groove, and the longitudinal inner surface of groove is rectangle or trapezoidal.Array pattern 211 can be obtained by photoetching process, can obtain concaveconvex structure after micrometer structure layer 21 photoetching, and such as, concaveconvex structure can be groove, and the longitudinal inner surface of groove can be rectangle or trapezoidal.Certainly, also can obtain groove by other technique, the longitudinal inner surface of groove can be other figures, such as circular arc.
As preferably, the material of micrometer structure layer 21 can be Polyacrylate materials, and polyacrylate material comprises negativity polyacrylate organic film material.Polyacrylate materials has good waterproof, every vapour performance, relative to other types Polyacrylate materials, selects negativity polyacrylate organic film material comparatively simple to the processing step preparing micrometer structure layer 21.
As an embodiment, in above-mentioned OLED encapsulating structure, nanostructured layers 22 can be granules of polystyrene coating or the silica dioxide granule coating through hydrophobization process, and these two kinds of grain coatings all have good waterproof, vapour proof function, further, manufacture craft is comparatively simple.
Wherein, upper and lower substrate (11,12) can be flexible polymer material.Adopt flexible polymer material to make upper and lower substrate (11,12), make OLED to realize Flexible Displays.Flexible OLED devices is soft, thus deformation can occur and not fragile, thus OLED can be arranged on curved surface, even can dress.Preferably, PET or PBT material is selected to make flexible base, board.But the material making flexible base, board is not limited to above-mentioned bi-material.
The embodiment of the present invention additionally provides a kind of method making above-mentioned OLED encapsulating structure, is all manufactured with described water vapor barrier layer comprises the following steps at the outer surface of described upper and lower substrate:
The first, select negativity polyacrylate organic film material to make micrometer structure layer, then on described micrometer structure layer, obtain described array pattern by typography in photoetching process or face;
The second, obtain polystyrene emulsion by the method for in-situ emulsion polymerization, described polystyrene emulsion is coated in the Surface Creation granules of polystyrene of described array pattern; Or, select silicon dioxide by the method for Plasma-CVD by the surface of array pattern described in silica dioxide granule plated film.
Wherein, obtain polystyrene emulsion by the method for in-situ emulsion polymerization, the Surface Creation granules of polystyrene described polystyrene emulsion being coated in described array pattern comprises the following steps:
The mixture of 100 parts of styrene, 6 parts of acrylic acid and 1000 parts of distilled water is added in the four neck flasks being furnished with reflux condensing tube, thermometer, blender; Stir, stir speed (S.S.) is 300 rpm, logical nitrogen 2 minutes in whipping process; Add 1 part of potassium peroxydisulfate initator; Then under nitrogen protection, in 70 DEG C of water-baths, reaction obtains polystyrene emulsion in 30 minutes; By the described polystyrene emulsion that is obtained by reacting by the method uniform fold of rotary coating on described array pattern, 30 seconds vacuumize time, vacuumize temperature is 50 DEG C, and vacuum values is 26Pa;
Silicon dioxide is selected to be comprised the following steps on the surface of array pattern described in silica dioxide granule plated film by the method for Plasma-CVD:
To the cover plate of silicon dioxide and substrate be coated with through 1.0 wt% silane couplers (γ-methacryloxypropyl-trimethoxy silane, vinyl trichlorosilane, γ-glycidylpropyl-trimethoxy silane) hexane solution in chemical modification 1min can obtain super-hydrophobicity interface.
Wherein, hydrophobic treatment step comprises: by the hexane solution of 1.0 wt% silane couplers to silicon dioxide chemical modification one minute.
A specific embodiment provided by the invention is described below in detail: first select negativity polyacrylate organic film material to make micrometer structure layer, then on described micrometer structure layer, obtain described array pattern by typography in photoetching process or face; Select the one in following two schemes to process described array pattern again.
Scheme 1: the mixture of 100 parts of styrene, 6 parts of acrylic acid and 1000 parts of distilled water is added in the four neck flasks being furnished with reflux condensing tube, thermometer, blender; logical nitrogen 2 minutes in whipping process; add 1 part of potassium peroxydisulfate initator; then reaction 30 minutes in 70 DEG C of water-baths under nitrogen protection; stir speed (S.S.) is kept to be 300 rpm; form polystyrene emulsion; polystyrene emulsion passes through the method uniform fold of rotary coating on array pattern; rotary rpm is 1000rpm; vacuumize temperature is 50 DEG C; vacuum values is 26Pa, 30 seconds vacuumize time.The hydrophobic performance on granules of polystyrene surface is strengthened greatly, thus the ability of the anti-steam of flexible base, board is strengthened greatly.
It should be noted that, also directly can generate granules of polystyrene on array pattern 211.Namely reacted on array pattern 211 by the method for in-situ emulsion polymerization, generate polystyrene emulsion, thus directly generate granules of polystyrene on the surface of array pattern 211.Adopt the step that can reduce rotary coating in this way.
Scheme 2: obtain silica dioxide granule by the method for the method plated film of Plasma-CVD, the canonical parameter of Plasma-CVD is as follows: adopt the equipment that AKT Inc. is standby, use silane (SiH
4) and laughing gas (N
2o) react under plasmoid, technological temperature is 350 DEG C.Its reaction equation is: SiH
4(gaseous state)+2N
2o (gaseous state) → SiO
2(solid-state)+2N
2(gaseous state)+H
2(gaseous state), afterwards, to the array pattern of silicon dioxide be coated with through 1.0 wt% silane couplers (γ-methacryloxypropyl-trimethoxy silane, vinyl trichlorosilane, γ-glycidylpropyl-trimethoxy silane) hexane solution in chemical modification within 1 minute, super-hydrophobicity interface can be obtained.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; change can be expected easily or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should described be as the criterion with the protection range of claim.
Claims (10)
1. an OLED encapsulating structure, comprise upper and lower substrate, OLED working lining is provided with between described upper and lower substrate, described OLED working lining surface is provided with encapsulated layer, described encapsulated layer is fitted with the inner surface of described upper and lower substrate respectively, it is characterized in that, the outer surface of described upper and lower substrate is equipped with water vapor barrier layer.
2. OLED encapsulating structure according to claim 1, it is characterized in that, described water vapor barrier layer comprises the micrometer structure layer of fitting with described upper substrate or infrabasal plate, and described micrometer structure layer is provided with array pattern, described array pattern is coated with the nanostructured layers with water-proof function.
3. OLED encapsulating structure according to claim 2, is characterized in that, described array pattern is concaveconvex structure; Described concaveconvex structure comprises groove, and the longitudinal inner surface of described groove is rectangle or trapezoidal.
4. OLED encapsulating structure according to claim 3, is characterized in that, the material of described micrometer structure layer is Polyacrylate materials, and described polyacrylate material comprises negativity polyacrylate organic film material.
5. the OLED encapsulating structure according to any one of claim 2-4, is characterized in that, described nanostructured layers is granules of polystyrene coating or the silica dioxide granule coating through hydrophobization process.
6. OLED encapsulating structure according to claim 5, is characterized in that, described upper and lower substrate is the flexible base, board of flexible polymer material.
7. OLED encapsulating structure according to claim 6, the material of described flexible base, board is PET or PBT.
8. make a method for the OLED encapsulating structure described in any one of the claims 5-7, it is characterized in that, all make described water vapor barrier layer at the outer surface of described upper and lower substrate and comprise the following steps:
The first, select negativity polyacrylate organic film material to make micrometer structure layer, then on described micrometer structure layer, obtain described array pattern by typography in photoetching process or face;
The second, obtain polystyrene emulsion by the method for in-situ emulsion polymerization, described polystyrene emulsion is coated in the Surface Creation granules of polystyrene of described array pattern;
Or, select silicon dioxide by the method for Plasma-CVD by the surface of array pattern described in silica dioxide granule plated film.
9. the method for making OLED encapsulating structure according to claim 8, it is characterized in that, obtain polystyrene emulsion by the method for in-situ emulsion polymerization, the Surface Creation granules of polystyrene described polystyrene emulsion being coated in described array pattern comprises the following steps:
The mixture of 100 parts of styrene, 6 parts of acrylic acid and 1000 parts of distilled water is added in the four neck flasks being furnished with reflux condensing tube, thermometer, blender; Stir, stir speed (S.S.) is 300 rpm, logical nitrogen 2 minutes in whipping process; Add 1 part of potassium peroxydisulfate initator; Then under nitrogen protection, in 70 DEG C of water-baths, reaction obtains polystyrene emulsion in 30 minutes; By the described polystyrene emulsion that is obtained by reacting by the method uniform fold of rotary coating on described array pattern, 30 seconds vacuumize time, vacuumize temperature is 50 DEG C, and vacuum values is 26Pa;
Silicon dioxide is selected to be comprised the following steps on the surface of array pattern described in silica dioxide granule plated film by the method for Plasma-CVD:
Within 1 minute, super-hydrophobicity interface is obtained by being coated with silicon dioxide substrate chemical modification in the hexane solution of 1.0 wt% silane couplers.
10. the method for making OLED encapsulating structure according to claim 9, is characterized in that, silane coupler comprises γ-methacryloxypropyl-trimethoxy silane, vinyl trichlorosilane, γ-glycidylpropyl-trimethoxy silane.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410475529.9A CN104300091B (en) | 2014-09-17 | 2014-09-17 | Oled device packaging structure and manufacturing method thereof |
| PCT/CN2014/092540 WO2016041253A1 (en) | 2014-09-17 | 2014-11-28 | Oled device encapsulation structure and manufacturing method therefor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410475529.9A CN104300091B (en) | 2014-09-17 | 2014-09-17 | Oled device packaging structure and manufacturing method thereof |
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| CN104851846A (en) * | 2015-03-25 | 2015-08-19 | 中山大学 | Flexible water and oxygen resistant packaging structure and preparation method and application thereof |
| CN104851844A (en) * | 2015-03-25 | 2015-08-19 | 中山大学 | Water and oxygen resistant blocking layer and preparation method and application thereof |
| CN105047829A (en) * | 2015-09-18 | 2015-11-11 | 京东方科技集团股份有限公司 | Packaging structure and packaging method of organic light emitting device and flexible display device |
| CN105226198A (en) * | 2015-10-13 | 2016-01-06 | 京东方科技集团股份有限公司 | A kind of waterproof transmission increasing flexible OLED devices device and preparation method thereof |
| CN105870356A (en) * | 2016-06-27 | 2016-08-17 | 京东方科技集团股份有限公司 | Display equipment and production method thereof |
| CN106486019A (en) * | 2016-10-31 | 2017-03-08 | 昆山工研院新型平板显示技术中心有限公司 | Flexible display apparatus and its manufacture method |
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| CN109980118A (en) * | 2017-12-27 | 2019-07-05 | 宁波长阳科技股份有限公司 | A kind of water vapor rejection film |
| CN110212108A (en) * | 2019-05-17 | 2019-09-06 | 华中科技大学 | A kind of packaging method and product of flexible display |
| CN110838557A (en) * | 2018-08-17 | 2020-02-25 | 乐金显示有限公司 | Display device having package substrate with high thermal conductivity |
| CN111129353A (en) * | 2020-02-07 | 2020-05-08 | 武汉华星光电半导体显示技术有限公司 | Display device and method of manufacturing the same |
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| WO2016041253A1 (en) | 2016-03-24 |
| CN104300091B (en) | 2017-02-15 |
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