CN104279904B - Semiconductor phase-change excitation apparatus and exciting method - Google Patents

Semiconductor phase-change excitation apparatus and exciting method Download PDF

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Publication number
CN104279904B
CN104279904B CN201310277237.XA CN201310277237A CN104279904B CN 104279904 B CN104279904 B CN 104279904B CN 201310277237 A CN201310277237 A CN 201310277237A CN 104279904 B CN104279904 B CN 104279904B
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phase
semiconductor
semiconductor chilling
chilling plate
excitation apparatus
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CN104279904A (en
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樊建华
李富玲
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/14Thermal energy storage

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  • Devices That Are Associated With Refrigeration Equipment (AREA)

Abstract

The present invention provides a kind of semiconductor phase-change excitation apparatus and exciting method, wherein device includes at least one semiconductor chilling plate, and the refrigeration side of the semiconductor chilling plate is provided with phase change medium channel.Above scheme provided by the invention uses phase-changing energy-storing technology by the active control to phase transformation and gets rid of the limitation of sensible heat accumulation of energy, has achieved the purpose that prolonged low grade fever damages energy storage while greatly improving thermal storage density.Across season energy-storage system using the above scheme is built, use cost is low, long service life.

Description

Semiconductor phase-change excitation apparatus and exciting method
Technical field
The present invention relates to phase-change material energy storage heat supply process field more particularly to a kind of semiconductor phase-change excitation apparatus and swash Forwarding method.
Background technique
Currently, cross-season heat-storage technology mainly has following a few classes: artificial water tank water body, gravel accumulation of heat, soil thermal storage and ground Lower aquifer heat storage.Artificial water tank water body and gravel accumulation of heat have a high heat capacity, good storage/latent heat releasing performance, and performance is stable, acyclic The advantages that border is polluted.Artificial water tank water body and the mode of gravel accumulation of heat, be by water or gravel storage in water tank, but water tank heat preserving Engineering challenges, cost is high, 10000m3Artificial water tank cost just be up to ten million yuan.Soil thermal storage system generallys use buried The advantages of pipe saves thermal energy in underground, the technology is without artificial thermal storage equipment, and cost is relatively low, but system heat waste Height is lost, required accumulation of heat volume is big, has an impact, and have selectivity to geologic structure to ecological environment around, is only applicable to rock With saturated water soil environment.Has the advantages that low cost as hot water storage tank using the natural aqueous layer in underground, but to geological environment It is required that harsh, easily there is phenomena such as plug well, corrosion and mould in system operation.The above cross-season heat-storage technology is due to technology or economy On limiting factor, be difficult to promote.Therefore it needs to develop across the season energy accumulating technique of new and effective economy.
Summary of the invention
Brief summary of the present invention is given below, in order to provide the basic reason about certain aspects of the invention Solution.It should be appreciated that this summary is not an exhaustive overview of the invention.It is not intended to determine key of the invention Or pith, nor is it intended to limit the scope of the present invention.Its purpose only provides certain concepts in simplified form, with This is as the preamble in greater detail discussed later.
The present invention provides a kind of semiconductor phase-change excitation apparatus and exciting method, with so as to solve the deficiencies in the prior art.
The present invention provides a kind of semiconductor phase-change excitation apparatus, including at least one semiconductor chilling plate, the semiconductor The refrigeration side of cooling piece is provided with phase change medium channel.
The present invention also provides a kind of semiconductor phase-change exciting methods, reduce local phase change medium by semiconductor chilling plate Temperature makes the phase change medium crystallization to discharge thermal energy.
Above scheme provided by the invention uses phase-changing energy-storing technology and is got rid of aobvious by the active control to phase transformation The limitation of hot accumulation of energy has achieved the purpose that prolonged low grade fever damages energy storage while greatly improving thermal storage density.Using the above scheme Across season energy-storage system is built, use cost is low, long service life.
Detailed description of the invention
Below with reference to the accompanying drawings illustrate embodiments of the invention, the invention will be more easily understood it is above and its Its objects, features and advantages.Component in attached drawing is intended merely to show the principle of the present invention.In the accompanying drawings, identical or similar Technical characteristic or component will be indicated using same or similar appended drawing reference.
Fig. 1 is the main view of semiconductor phase-change excitation apparatus provided in an embodiment of the present invention.
Description of symbols:
Heat preservation component -1;Semiconductor chilling plate -2;Sealing ring -3;
Connecting tube -4;Thermal conductive metal plate -5.
Specific embodiment
Embodiments of the present invention will be described below with reference to the accompanying drawings.It is retouched in an attached drawing of the invention or a kind of embodiment The elements and features stated can be combined with elements and features shown in one or more other attached drawings or embodiment.It answers When note that for purposes of clarity, being omitted known to unrelated to the invention, those of ordinary skill in the art in attached drawing and explanation Component and processing expression and description.
Fig. 1 is the main view of semiconductor phase-change excitation apparatus provided in an embodiment of the present invention.As shown in Figure 1, the present invention is real The semiconductor phase-change excitation apparatus of example offer, including at least one semiconductor chilling plate 2, the system of the semiconductor chilling plate 2 are provided Cold side is provided with phase change medium channel.
Above scheme uses phase-changing energy-storing technology by the active control to phase transformation and gets rid of the office of sensible heat accumulation of energy Limit has achieved the purpose that prolonged low grade fever damages energy storage effect while greatly improving thermal storage density.Across grade storage using the above scheme Energy system building, use cost are low, long service life.
In actual use, which may include a heat preservation component 1, heat preservation component 1 can with but It is not limited to one piece of insulation board.It is provided with installation cavity on heat preservation component 1, a piece of semiconductor chilling plate 2 is installed in installation cavity, And refrigeration bottom of the side towards installation cavity of semiconductor chilling plate 2.Multi-disc (containing two panels) semiconductor refrigerating can certainly be installed Piece 2, when installing more semiconductor cooling piece 2, more semiconductor cooling piece 2 is stacked, and every two adjacent semiconductor refrigerating The refrigeration side of one of piece 2 is close or is close to another heat radiation side.
The bottom of installation cavity is provided with through-hole, connecting tube 4 is provided in through-hole, the hollow space of connecting tube 4 is phase transformation Medium channel.Connecting tube 4 with phase change medium container for being connected.Phase-change material in phase change medium container is in supercooled state.Half The refrigerating capacity of conductor cooling piece 2 reduces local phase transformation medium temperature in channel, and local phase change medium crystallizes and is situated between by phase transformation The phase change medium in supercooled state is set all to crystallize successively and discharge thermal energy in matter channel conductance to phase change medium container.
In order to migrate the low temperature of the generation of semiconductor chilling plate 2 smoothly to phase change medium channel, then semiconductor chilling plate 2 Thermal conductive metal plate 5 is provided between phase change medium channel, thermal conductive metal plate 5 is tightly attached to the refrigeration side of semiconductor chilling plate 2, phase The one end for becoming medium channel withstands on the surface of thermal conductive metal plate 5.Thermal conductive metal plate 5 has good heating conduction, improves system Efficiency of the cold low temperature to phase change medium channel migration.
In order to obtain preferable sealing effect, prevents phase change medium from leaking, be set in connecting tube 4 and through-hole sealing Sealing ring 3, and the sealing ring 3 and the cooperation in sealing contact of thermal conductive metal plate 5, realize connecting tube 4, through-hole and thermal conductive metal plate 5 Between excellent sealing.
The embodiment of the present invention also provides a kind of semiconductor phase-change exciting method, reduces Local Phase by semiconductor chilling plate 2 The temperature for becoming medium makes the phase change medium crystallization to discharge thermal energy.
Phase change medium is sodium acetate solution as a preferred method,.The water content of the sodium acetate solution is in 40%-60%. Sodium acetate solution passes through the Peltier effect of semiconductor chilling plate 2, and excitation is in the sodium acetate solution of supercooled state, makes its crystallization, 60 DEG C or so of thermal energy is recycled in release.Certainly, phase change medium can also use other phase-change materials except place's sodium acetate solution, As long as it can be excited by above-mentioned semiconductor phase-change excitation apparatus.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations;Although Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features; And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and Range.

Claims (5)

1. a kind of semiconductor phase-change excitation apparatus, including a heat preservation component, which is characterized in that be provided with peace on heat preservation component It behave affectedly, the excitation apparatus includes at least one semiconductor chilling plate, and the refrigeration side of the semiconductor chilling plate is provided with phase transformation Medium channel is provided with thermal conductive metal plate, the heat-conducting metal between the semiconductor chilling plate and the phase change medium channel Piece is tightly attached to the refrigeration side of the semiconductor chilling plate, and the one end in the phase change medium channel withstands on the table of the thermal conductive metal plate Face;The refrigeration side of the semiconductor chilling plate is towards the bottom of the installation cavity, and the bottom of the installation cavity is provided with through-hole, institute It states and is provided with connecting tube in through-hole, the hollow space of the connecting tube is the phase change medium channel, and phase change medium is sodium acetate Solution.
2. semiconductor phase-change excitation apparatus according to claim 1, which is characterized in that the semiconductor chilling plate is set to In the installation cavity.
3. semiconductor phase-change excitation apparatus according to claim 1 or 2, which is characterized in that be set in the connecting tube With the sealing ring of through-hole sealing.
4. semiconductor phase-change excitation apparatus according to claim 3, which is characterized in that the sealing ring and the thermally conductive gold Belong to piece cooperation in sealing contact, realizes the sealing between connecting tube, through-hole and thermal conductive metal plate.
5. semiconductor phase-change excitation apparatus according to claim 1 or 2, which is characterized in that the semiconductor chilling plate is Multiple, multiple semiconductor chilling plates are stacked, and the refrigeration side of one of every two adjacent described semiconductor chilling plate is close Or it is close to another heat radiation side.
CN201310277237.XA 2013-07-02 2013-07-02 Semiconductor phase-change excitation apparatus and exciting method Active CN104279904B (en)

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Application Number Priority Date Filing Date Title
CN201310277237.XA CN104279904B (en) 2013-07-02 2013-07-02 Semiconductor phase-change excitation apparatus and exciting method

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CN104279904B true CN104279904B (en) 2019-05-21

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2747753Y (en) * 2004-12-20 2005-12-21 华中科技大学 Laser head cooler having phase change energy storage
CN101767685A (en) * 2010-01-21 2010-07-07 中国人民解放军南京军区南京总医院 Medical refrigerated transport case
CN203615799U (en) * 2013-07-02 2014-05-28 樊建华 Semiconductor phase transition excitation apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2747753Y (en) * 2004-12-20 2005-12-21 华中科技大学 Laser head cooler having phase change energy storage
CN101767685A (en) * 2010-01-21 2010-07-07 中国人民解放军南京军区南京总医院 Medical refrigerated transport case
CN203615799U (en) * 2013-07-02 2014-05-28 樊建华 Semiconductor phase transition excitation apparatus

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