CN104279904A - Semiconductor phase change excitation device and excitation method - Google Patents
Semiconductor phase change excitation device and excitation method Download PDFInfo
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- CN104279904A CN104279904A CN201310277237.XA CN201310277237A CN104279904A CN 104279904 A CN104279904 A CN 104279904A CN 201310277237 A CN201310277237 A CN 201310277237A CN 104279904 A CN104279904 A CN 104279904A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/14—Thermal energy storage
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Abstract
The invention provides a semiconductor phase change excitation device and excitation method. The device comprises at least one semiconductor chilling plate, and a phase channel medium channel is arranged on the chilling side of the semiconductor chilling plate. According to the scheme, a phase change energy storage technology is adopted, through active control over phase changes, the limit of heat-sensitive energy storage is overcome, heat storage density is greatly improved, and meanwhile the aim of long-time low-heat-loss energy storage is achieved. A cross-season energy storage system adopting the scheme is low in construction and use cost, and long in service life.
Description
Technical field
The present invention relates to phase-change material energy storage heat supply process field, particularly relate to a kind of semiconductor phase-change excitation apparatus and exciting method.
Background technology
At present, cross-season heat-storage technology mainly contains following a few class: artificial water tank water body, gravel accumulation of heat, soil thermal storage and underground reservoir accumulation of heat.Artificial water tank water body and gravel accumulation of heat have high heat capacity, and good stores/latent heat releasing performance, the advantage such as stable performance, non-environmental-pollution.The mode of artificial water tank water body and gravel accumulation of heat deposits water or gravel with in water tank, but water tank heat preserving engineering challenges, cost is high, 10000m
3artificial water tank cost just up to ten million yuan.Soil thermal storage system adopts underground pipe to save in underground by heat energy usually, the advantage of this technology is without the need to artificial thermal storage equipment, cost is relatively low, but system heat loss is high, required accumulation of heat volume is large, there is impact to around ecological environment, and have geologic structure selective, be only applicable to rock and saturation water soil environment.Utilize the natural aqueous layer in underground as hot water storage tank, there is the advantage that cost is low, but harsh to geology environmental requirement, and easily there is the phenomenons such as plug well, corrosion and mould in system cloud gray model.Above cross-season heat-storage technology, due to technology or limiting factor economically, is difficult to promote.Therefore need badly development of new high-efficiency and economic across energy accumulating technique in season.
Summary of the invention
Provide hereinafter about brief overview of the present invention, to provide about the basic comprehension in some of the present invention.Should be appreciated that this general introduction is not summarize about exhaustive of the present invention.It is not that intention determines key of the present invention or pith, and nor is it intended to limit the scope of the present invention.Its object is only provide some concept in simplified form, in this, as the preorder in greater detail discussed after a while.
The invention provides a kind of semiconductor phase-change excitation apparatus and exciting method, in order to solve the deficiencies in the prior art.
The invention provides a kind of semiconductor phase-change excitation apparatus, comprise at least one semiconductor chilling plate, the refrigeration side of described semiconductor chilling plate is provided with phase change medium passage.
The present invention also provides a kind of semiconductor phase-change exciting method, is reduced the temperature of local phase change medium, make described phase change medium crystallization to discharge heat energy by semiconductor chilling plate.
Such scheme provided by the invention, have employed phase-changing energy-storing technology, by the ACTIVE CONTROL to phase transformation, has broken away from the limitation of sensible heat accumulation of energy, reaches the object that prolonged low grade fever damages energy storage while greatly improving thermal storage density.Adopt the building across season energy-storage system of such scheme, use cost is low, long service life.
Accompanying drawing explanation
Below with reference to the accompanying drawings illustrate embodiments of the invention, above and other objects, features and advantages of the present invention can be understood more easily.Parts in accompanying drawing are just in order to illustrate principle of the present invention.In the accompanying drawings, same or similar technical characteristic or parts will adopt same or similar Reference numeral to represent.
The front view of the semiconductor phase-change excitation apparatus that Fig. 1 provides for the embodiment of the present invention.
Description of reference numerals:
Heat preservation component-1; Semiconductor chilling plate-2; Sealing ring-3;
Tube connector-4; Thermal conductive metal plate-5.
Detailed description of the invention
With reference to the accompanying drawings embodiments of the invention are described.The element described in an accompanying drawing of the present invention or a kind of embodiment and feature can combine with the element shown in one or more other accompanying drawing or embodiment and feature.It should be noted that for purposes of clarity, accompanying drawing and eliminate expression and the description of unrelated to the invention, parts known to persons of ordinary skill in the art and process in illustrating.
The front view of the semiconductor phase-change excitation apparatus that Fig. 1 provides for the embodiment of the present invention.As shown in Figure 1, the semiconductor phase-change excitation apparatus that the embodiment of the present invention provides, comprises at least one semiconductor chilling plate 2, and the refrigeration side of described semiconductor chilling plate 2 is provided with phase change medium passage.
Such scheme, have employed phase-changing energy-storing technology, by the ACTIVE CONTROL to phase transformation, has broken away from the limitation of sensible heat accumulation of energy, reaches the object effect that prolonged low grade fever damages energy storage while greatly improving thermal storage density.Adopt the building across level energy-storage system of such scheme, use cost is low, long service life.
In actual use, this semiconductor phase-change excitation apparatus can comprise a heat preservation component 1, and heat preservation component 1 can be, but not limited to be one piece of warming plate.Heat preservation component 1 is provided with installation cavity, a slice semiconductor chilling plate 2 is installed in installation cavity, and the refrigeration side of semiconductor chilling plate 2 is towards the bottom of installation cavity.Multi-disc (containing two panels) semiconductor chilling plate 2 can certainly be installed, when installing more semiconductor cooling piece 2, the stacked setting of more semiconductor cooling piece 2, and the refrigeration side of one of every two adjacent semiconductor chilling plates 2 near or be close to another heat radiation side.
The bottom of installation cavity is provided with through hole, is provided with tube connector 4 in through hole, the hollow space of tube connector 4 is phase change medium passage.Tube connector 4 is for being connected with phase change medium container.Phase-change material in phase change medium container is in supercooled state.The refrigerating capacity of semiconductor chilling plate 2 reduces phase transformation medium temperature in local in passage, local phase change medium crystallization by the whole crystallization discharge heat energy successively of the phase change medium that makes to be in supercooled state in phase change medium channel conductance to phase change medium container.
Phase change medium passage is migrated to smoothly in order to make the low temperature of the generation of semiconductor chilling plate 2, then be provided with thermal conductive metal plate 5 between semiconductor chilling plate 2 and phase change medium passage, thermal conductive metal plate 5 is close to the refrigeration side of semiconductor chilling plate 2, and one end of phase change medium passage withstands on the surface of thermal conductive metal plate 5.Thermal conductive metal plate 5 has good heat conductivility, improves the efficiency of low temperature to phase change medium channel migration of cooling piece.
In order to obtain good sealing effectiveness, prevent phase change medium seepage, tube connector 4 is set with the sealing ring 3 sealed with through hole, and sealing circle 3 seals to contact and coordinates, and achieves the excellent sealing between tube connector 4, through hole and thermal conductive metal plate 5 with thermal conductive metal plate 5.
The embodiment of the present invention also provides a kind of semiconductor phase-change exciting method, is reduced the temperature of local phase change medium, make described phase change medium crystallization to discharge heat energy by semiconductor chilling plate 2.
As a kind of preferred embodiment, phase change medium is SAS.The water content of this SAS is at 40%-60%.SAS, by the Peltier effect of semiconductor chilling plate 2, excites the SAS being in supercooled state, makes its crystallization, the heat energy of release recovery about 60 DEG C.Certainly, phase change medium also can adopt other phase-change materials outside place's SAS, as long as it can be excited by above-mentioned semiconductor phase-change excitation apparatus.
Last it is noted that above embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to previous embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (10)
1. a semiconductor phase-change excitation apparatus, is characterized in that, comprises at least one semiconductor chilling plate, and the refrigeration side of described semiconductor chilling plate is provided with phase change medium passage.
2. semiconductor phase-change excitation apparatus according to claim 1, it is characterized in that, thermal conductive metal plate is provided with between described semiconductor chilling plate and described phase change medium passage, described thermal conductive metal plate is close to the refrigeration side of described semiconductor chilling plate, and one end of described phase change medium passage withstands on the surface of described thermal conductive metal plate.
3. semiconductor phase-change excitation apparatus according to claim 2, is characterized in that, also comprise heat preservation component, and described heat preservation component is provided with installation cavity, and described semiconductor chilling plate is arranged in described installation cavity.
4. the semiconductor phase-change excitation apparatus according to Claims 2 or 3, it is characterized in that, the refrigeration side of described semiconductor chilling plate is towards the bottom of described installation cavity, the bottom of described installation cavity is provided with through hole, be provided with tube connector in described through hole, the hollow space of described tube connector is described phase change medium passage.
5. semiconductor phase-change excitation apparatus according to claim 4, is characterized in that, described tube connector is set with the sealing ring sealed with described through hole.
6. semiconductor phase-change excitation apparatus according to claim 5, is characterized in that, described sealing ring and described thermal conductive metal plate seal to contact and coordinate.
7. the semiconductor phase-change excitation apparatus according to claim 1 or 2 or 3, it is characterized in that, described semiconductor chilling plate is multiple, the stacked setting of multiple described semiconductor chilling plates, and the refrigeration side of one of every two adjacent described semiconductor chilling plates near or be close to another heat radiation side.
8. a semiconductor phase-change exciting method, is characterized in that, is reduced the temperature of local phase change medium, make described phase change medium crystallization to discharge heat energy by semiconductor chilling plate.
9. semiconductor phase-change exciting method according to claim 8, is characterized in that, described phase change medium is SAS.
10. semiconductor phase-change exciting method according to claim 9, is characterized in that, the water content of described SAS is at 40%-60%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310277237.XA CN104279904B (en) | 2013-07-02 | 2013-07-02 | Semiconductor phase-change excitation apparatus and exciting method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310277237.XA CN104279904B (en) | 2013-07-02 | 2013-07-02 | Semiconductor phase-change excitation apparatus and exciting method |
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| CN104279904A true CN104279904A (en) | 2015-01-14 |
| CN104279904B CN104279904B (en) | 2019-05-21 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2747753Y (en) * | 2004-12-20 | 2005-12-21 | 华中科技大学 | Laser head cooler having phase change energy storage |
| CN101767685A (en) * | 2010-01-21 | 2010-07-07 | 中国人民解放军南京军区南京总医院 | Medical refrigerated transport case |
| CN203615799U (en) * | 2013-07-02 | 2014-05-28 | 樊建华 | Semiconductor phase transition excitation apparatus |
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2013
- 2013-07-02 CN CN201310277237.XA patent/CN104279904B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2747753Y (en) * | 2004-12-20 | 2005-12-21 | 华中科技大学 | Laser head cooler having phase change energy storage |
| CN101767685A (en) * | 2010-01-21 | 2010-07-07 | 中国人民解放军南京军区南京总医院 | Medical refrigerated transport case |
| CN203615799U (en) * | 2013-07-02 | 2014-05-28 | 樊建华 | Semiconductor phase transition excitation apparatus |
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| CN104279904B (en) | 2019-05-21 |
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