CN104278241A - Preparation technology for thin film material possessing multi-environment adaptability - Google Patents

Preparation technology for thin film material possessing multi-environment adaptability Download PDF

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CN104278241A
CN104278241A CN201310273979.5A CN201310273979A CN104278241A CN 104278241 A CN104278241 A CN 104278241A CN 201310273979 A CN201310273979 A CN 201310273979A CN 104278241 A CN104278241 A CN 104278241A
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mos
film
film material
layer
thin film
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CN104278241B (en
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陈建敏
吴艳霞
吉利
李红轩
冶银平
周惠娣
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Lanzhou Institute of Chemical Physics LICP of CAS
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention discloses a preparation technology for a molybdenum disulfide/hydrogen-containing amorphous carbon multilayer film material possessing multi-environment adaptability. The multilayer film material is prepared by employing the design of a MoS2/a-C:H multilayer structure and utilizing a reaction nonequilibrium magnetron sputtering technology. The preparation method is simple, the prepared thin film structure is compact in structure, and the defect of cavity penetrating the film layer is avoided. Also the hard a-C:H film layer helps to improve the bearing capability of the thin film, and the soft MoS2 film layer helps to improve the lubrication performance of the thin film, so that the multi-environment adaptability of the thin film is improved. The MoS2/a-C:H multilayer film possesses good tribology performances in environments of vacuum, air and nitrogen, and is applicable to manned space flights, interstellar probes, artificial satellites and other many fields as a space lubrication material.

Description

A kind of technology of preparing with the adaptive thin-film material of multi-environment
Technical field
The present invention relates to a kind of non-balance magnetically controlled sputter technology that utilizes and prepare the technology of preparing with the adaptive composite lubricating film of multi-environment.
Background technology
The development of the space high-tech industries such as the manned astro-engineering, spacelab, interstellar probe, for positive contribution has been made in China's economic construction, national security and development in science and technology.One of important feature of space environment is exactly high vacuum, and in such circumstances, the oxide film of metallic surface is removed very soon in friction process, very easily adhere between clean metallic surfaces, even cold welding, causes friction pair can not relative movement, and this is fatal for space mechanical moving components.In addition, conventional grease lubricant, under the vacuum environment of harshness, easily evaporates, decomposes or be cross-linked and lost efficacy.So, the lubrication failure of space technology critical moving components in vacuum environment has become the bottleneck of restriction space technology service life of equipment and reliability, therefore, to be suitable for the high reliability of high vacuum, the lubricant of extra long life and technology significant in development.
Solid lubricant, owing to having low rate of evaporation, wider temperature range, radioprotective, the advantage such as corrosion-resistant, is desirable vacuum lubricant.Thin-film material is significant as the wear-resisting lubricant film of precise part, and soft metal, due to expensive and be very limited, uses molybdenumdisulphide (MoS more widely at present 2although) there is good tribological property in vacuum, the oxidized but frictional behaviour of storage process is deteriorated in atmosphere, and corrosion resistant performance is poor in addition, and film hardness is low, easily produces abrasive dust and causes pollution.And novel hydrogeneous amorphous carbon-film (a-C:H) is although have high rigidity, low-friction coefficient, high-wearing feature, good chemical stability etc., wear-out life is short under vacuum conditions, significantly limit its application at space field.
Summary of the invention
The object of the present invention is to provide a kind of technology of preparing with the adaptive thin-film material of multi-environment.
Object of the present invention realizes by following technical scheme:
The present invention adopts MoS 2the design of/a-C:H multilayered structure, and utilize the preparation of reaction non-balance magnetically controlled sputter technology.
Have a technology of preparing for the adaptive thin-film material of multi-environment, it is characterized in that the preparation process of thin-film material completes in the vacuum chamber of a non-balance magnetically controlled sputter coating equipment, concrete steps are:
A, activation clean surface: after in the vacuum chamber smooth, clean metal base being placed in non-balance magnetically controlled sputter coating equipment, be evacuated to 10 -3below Pa, passes into argon gas as ionization of gas, and substrate applies pulsed bias, and glow discharge produces plasma body, carries out plasma-activated cleaning to substrate surface;
Prepared by B, transition layer: after cleaning, utilize the method for non-balance magnetically controlled sputter first to prepare silicon transition layer, select HIGH-PURITY SILICON as sputtering target material, and using argon gas as sputter gas, matrix extra-pulse negative bias, closes after deposition certain thickness;
C, the method for unbalanced reactive magnetron sputtering is utilized to prepare MoS 2/ a-C:H multilayered film material: sputtering target material selects MoS 2target and graphite target, wherein prepare every layer of MoS 2layer and reactant gas source during a-C:H layer respectively: Ar and Ar/CH 4, by changing target current and CH 4pass into the time, realize MoS 2/ a-C:H multilayered structure replaces and mechanical periodicity, opens intermediate frequency power supply and pulsed bias power supply, depositional coating, is cooled to temperature and is less than 40 DEG C after plated film, and release vacuum takes out obtained thin-film material.
In step, metal base is selected from stainless steel, steel or titanium alloy.
In step, plasma-activated process parameters range is: air pressure 0.2 ~ 3.0 Pa, pulsed bias-100 ~-1200V.
In stepb, transition layer preparation technology parameter scope is: cavity air pressure 0.2 ~ 1.0Pa, sputtering current 1 ~ 12 A, pulsed bias-50 ~-1000V, transition region thickness 30 ~ 500 nm.
In step C, process parameters range is: cavity air pressure 0.2 ~ 2.0Pa, Ar/CH 4volumetric flow of gas is than 6:1 ~ 1:6, and pulsed bias-100 ~-1000V, sputtering current 1 ~ 25 A, modulation period is 5 ~ 1000 nm.
Coating section microtexture prepared by the present invention as shown in Figure 1, defines MoS 2/ a-C:H nanometer multilayer alternating structure, at MoS 2in/a-C:H multi-layer film structure: hard a-C:H film provides bearing capacity, soft MoS 2film provides oilness.Soft formation MoS 2film has good shearing action on surface, the hard formation a-C:H film on sub-surface is produced to a certain extent " relatively sliding " in low-shearing power level, alleviates the interfacial stress of high rigidity rete and maintain toughness; The existence in heterogeneous thin crystal boundary face, adds the toughness of film, prevents the expansion of crackle, and then improve the friction durability of film.
MoS prepared by the present invention 2/ a-C:H multilayer film and pure MoS 2film and pure a-C:H film are compared: three kinds of films are carried out frictional experiment respectively in vacuum, nitrogen and air.Result shows, pure MoS 2film in atmosphere frictional coefficient is high, and the friction life-span is short; Although pure a-C:H film in a vacuum frictional coefficient is very low, wear-out life is extremely short; And MoS 2/ a-C:H multilayer film all has very low frictional coefficient and very long friction durability in a variety of contexts.
Multilayer film prepared by the present invention can as space lubricant on the movement of metallic parts in the fields such as manned space flight airship, star detector, man-made satellite.
Product main performance index of the present invention is as shown in table 1:
Table 1
Accompanying drawing explanation
Fig. 1 is MoS 2the profile scanning Electronic Speculum shape appearance figure of/a-C:H multilayer film.
Embodiment
Embodiment 1: non-balance magnetically controlled sputter coating equipment
A. clean surface is activated: after in the vacuum cavity smooth, clean stainless steel plate planar substrates being placed in non-balance magnetically controlled sputter coating equipment, vacuum chamber internal gas pressure is evacuated to 6 × 10 -3below Pa, passing into high-purity argon gas to air pressure is 2.5 Pa.Open pulsed bias power supply, regulation voltage level is-600 V, carries out argon plasma Bombardment and cleaning 25 min.
B. depositing silicon transition layer: regulate argon flow amount, make cavity air pressure maintain 0.3Pa, open intermediate frequency silicon target shielding power supply and pulsed bias power supply, sputtering current is regulated to be 7 A, pulsed bias is-200 V, and dutycycle is 40%, reaches after 200 nm close until transition region thickness.
C. MoS is deposited 2/ a-C:H multilayer film: pulsed bias controls at-200 V, dutycycle is 20%, depositing time 2 h.Interval opens MoS 2, graphite target, and alternately pass into Ar, Ar/CH 4mixed gas alternating deposit MoS 2layer and a-C:H layer.Ar flow set is 65sccm, prepares individual layer MoS 2during layer, open MoS 2shielding power supply, regulate sputtering current to be 0.4 A, and pass into Ar, depositing time is 5 min; During preparation a-C:H layer, close MoS 2shielding power supply, opens graphite shielding power supply, regulates sputtering current to be 14 A, Ar and N 2flow be respectively 65 sccm and 45 sccm, depositing time is 5 min.Prepare the MoS that modulation period is 98 nm in this approach 2/ a-C:H multilayer film.Be cooled to temperature after plated film and be less than 40 DEG C, release vacuum takes out substrate.
Embodiment 2:
A. sample pretreatment: after in the vacuum cavity smooth, clean titanium alloy planar substrates being placed in non-balance magnetically controlled sputter coating equipment, vacuum chamber internal gas pressure is evacuated to 6 × 10 -3below Pa, passing into high pure nitrogen to air pressure is 0.5 Pa.Open pulsed bias power supply, regulation voltage level is-1200V, carries out argon plasma Bombardment and cleaning 20 min.
B. depositing silicon transition layer: regulate argon flow amount, make cavity air pressure maintain 1.0 Pa, open mid frequency sputtering power supply and pulsed bias power supply, regulate sputtering current to be 3 A, pulsed bias is-100 V, reaches after 50 nm close until transition region thickness.
C. MoS is deposited 2/ a-C:H multilayer film: pulsed bias controls at-400 V, dutycycle is 50%, depositing time 2 h.Interval opens MoS 2, graphite target, and alternately pass into Ar, Ar/CH 4mixed gas alternating deposit MoS 2layer and a-C:H layer.Ar flow set is 55sccm, prepares individual layer MoS 2during layer, open MoS 2shielding power supply, regulate sputtering current to be 0.1 A, and pass into Ar, depositing time is 15 min; During preparation a-C:H layer, close MoS 2shielding power supply, opens graphite shielding power supply, regulates sputtering current to be 8 A, Ar and N 2flow be respectively 55 sccm and 55 sccm, depositing time is 15 min.Prepare the MoS that modulation period is 334 nm in this approach 2/ a-C:H multilayer film.Be cooled to temperature after plated film and be less than 40 DEG C, release vacuum takes out substrate.
Embodiment 3:
A. sample pretreatment: after in the vacuum cavity smooth, clean steel ball substrate being placed in non-balance magnetically controlled sputter coating equipment, vacuum chamber internal gas pressure is evacuated to 6 × 10 -3below Pa, passing into high-purity argon gas to air pressure is 1.0 Pa.Open pulsed bias power supply, regulation voltage level is-600 V, carries out argon plasma Bombardment and cleaning 30 min.
B. depositing silicon transition layer: regulate argon flow amount, make cavity air pressure maintain 0.5 Pa, open mid frequency sputtering power supply and pulsed bias power supply, regulate sputtering current to be 8 A, pulsed bias is-400 V, reaches after 300 nm close until transition region thickness.
C. MoS is deposited 2/ a-C:H multilayer film: pulsed bias controls at-600 V, dutycycle is 70%, depositing time 2 h.Interval opens MoS 2, graphite target, and alternately pass into Ar, Ar/CH 4gas mixture alternating deposit MoS 2layer and a-C:H layer.Ar flow set is 75sccm, prepares individual layer MoS 2during layer, open MoS 2shielding power supply, regulate sputtering current to be 0.5 A, and pass into Ar, depositing time is 30 min; During preparation a-C:H layer, close MoS 2shielding power supply, opens graphite shielding power supply, regulates sputtering current to be 18 A, Ar and N 2flow be respectively 75 sccm and 35 sccm, depositing time is 30 min.Prepare the MoS that modulation period is 628 nm in this approach 2/ a-C:H multilayer film.Be cooled to temperature after plated film and be less than 40 DEG C, release vacuum takes out substrate.

Claims (5)

1. have a technology of preparing for the adaptive thin-film material of multi-environment, it is characterized in that the preparation process of thin-film material completes in the vacuum chamber of a non-balance magnetically controlled sputter coating equipment, concrete steps are:
A, activation clean surface: after in the vacuum chamber smooth, clean metal base being placed in non-balance magnetically controlled sputter coating equipment, be evacuated to 10 -3below Pa, passes into argon gas as ionization of gas, and substrate applies pulsed bias, and glow discharge produces plasma body, carries out plasma-activated cleaning to substrate surface;
Prepared by B, transition layer: after cleaning, utilize the method for non-balance magnetically controlled sputter first to prepare silicon transition layer, select HIGH-PURITY SILICON as sputtering target material, and using argon gas as sputter gas, matrix extra-pulse negative bias, closes after deposition certain thickness;
C, the method for unbalanced reactive magnetron sputtering is utilized to prepare MoS 2/ a-C:H multilayered film material: sputtering target material selects MoS 2target and graphite target, wherein prepare every layer of MoS 2layer and reactant gas source during a-C:H layer respectively: Ar and Ar/CH 4, by changing target current and CH 4pass into the time, realize MoS 2/ a-C:H multilayered structure replaces and mechanical periodicity, opens intermediate frequency power supply and pulsed bias power supply, depositional coating, is cooled to temperature and is less than 40 DEG C after plated film, and release vacuum takes out obtained thin-film material.
2. the method for claim 1, is characterized in that, in step, metal base is selected from stainless steel, steel or titanium alloy.
3. the method for claim 1, is characterized in that in step, and plasma-activated process parameters range is: air pressure 0.2 ~ 3.0 Pa, pulsed bias-100 ~-1200V.
4. the method for claim 1, is characterized in that, in stepb, transition layer preparation technology parameter scope is: cavity air pressure 0.2 ~ 1.0Pa, sputtering current 1 ~ 12 A, pulsed bias-50 ~-1000V, transition region thickness 30 ~ 500 nm.
5. the method for claim 1, is characterized in that, in step C, process parameters range is: cavity air pressure 0.2 ~ 2.0Pa, Ar/CH 4volumetric flow of gas is than 6:1 ~ 1:6, and pulsed bias-100 ~-1000V, sputtering current 1 ~ 25 A, modulation period is 5 ~ 1000 nm.
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2539767A (en) * 2015-05-01 2016-12-28 Teer Coatings Ltd Improvements to a substrate coating
CN106868504A (en) * 2017-01-04 2017-06-20 兰州空间技术物理研究所 A kind of Diesel engine piece surface multi-layer wear-resistant antifriction film and preparation method thereof
CN107219030A (en) * 2016-03-21 2017-09-29 中国科学院深圳先进技术研究院 Membrane stress tester and its method of testing
CN109576658A (en) * 2018-12-14 2019-04-05 西南交通大学 Dendroid amorphous MoS is prepared based on magnetron sputtering method2The method of nanostructure
CN111304616A (en) * 2020-04-03 2020-06-19 中国科学院兰州化学物理研究所 Preparation method of Ti and C doped molybdenum disulfide based nano composite film
CN111485212A (en) * 2020-06-04 2020-08-04 兰州文理学院 Preparation method of molybdenum disulfide-carbon multilayer film with sub-10-nanometer bionic structure
TWI727275B (en) * 2019-01-25 2021-05-11 鴻海精密工業股份有限公司 Photoelectric detector and method for photoelectric conversion
WO2021183050A1 (en) * 2020-03-10 2021-09-16 National University Of Singapore A seed layer, a heterostructure comprising the seed layer and a method of forming a layer of material using the seed layer
CN114107906A (en) * 2021-11-18 2022-03-01 中国地质大学（北京） Low-friction film for inner wall of solar panel driving bearing and preparation method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101550535A (en) * 2009-05-07 2009-10-07 上海交通大学 Method for preparing compound metal sulfide diamond composite membrane

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101550535A (en) * 2009-05-07 2009-10-07 上海交通大学 Method for preparing compound metal sulfide diamond composite membrane

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
TAKANORI TAKENO ET AL.: "Deposition and structural analyses of molybdenum-disulfide(MoS2)-amorphous hydrogenated carbon(a-C:H) composite coatings", 《DIAMOND & RALATED MATERIALS》 *
唐伟忠: "《薄膜材料制备原理、技术及应用》", 31 January 2003 *
张艳茹等: "直流反应磁控溅射制备a-C:H薄膜及其表面粗糙度研究", 《表面技术》 *
王云锋: "复合类金刚石薄膜的制备及其摩擦性能研究", 《中国博士学位论文全文数据库》 *
赵飞等: "MoSx掺杂DLC薄膜的摩擦磨损行为I：载荷的影响", 《摩擦学学报》 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2539767B (en) * 2015-05-01 2019-10-30 Teer Coatings Ltd Improvements to a substrate coating
GB2539767A (en) * 2015-05-01 2016-12-28 Teer Coatings Ltd Improvements to a substrate coating
CN107219030B (en) * 2016-03-21 2020-07-21 中国科学院深圳先进技术研究院 Film stress tester and testing method thereof
CN107219030A (en) * 2016-03-21 2017-09-29 中国科学院深圳先进技术研究院 Membrane stress tester and its method of testing
CN106868504A (en) * 2017-01-04 2017-06-20 兰州空间技术物理研究所 A kind of Diesel engine piece surface multi-layer wear-resistant antifriction film and preparation method thereof
CN106868504B (en) * 2017-01-04 2019-02-19 兰州空间技术物理研究所 A kind of diesel engine piece surface multi-layer wear-resistant antifriction film and preparation method thereof
CN109576658A (en) * 2018-12-14 2019-04-05 西南交通大学 Dendroid amorphous MoS is prepared based on magnetron sputtering method2The method of nanostructure
TWI727275B (en) * 2019-01-25 2021-05-11 鴻海精密工業股份有限公司 Photoelectric detector and method for photoelectric conversion
WO2021183050A1 (en) * 2020-03-10 2021-09-16 National University Of Singapore A seed layer, a heterostructure comprising the seed layer and a method of forming a layer of material using the seed layer
CN111304616A (en) * 2020-04-03 2020-06-19 中国科学院兰州化学物理研究所 Preparation method of Ti and C doped molybdenum disulfide based nano composite film
CN111485212A (en) * 2020-06-04 2020-08-04 兰州文理学院 Preparation method of molybdenum disulfide-carbon multilayer film with sub-10-nanometer bionic structure
CN111485212B (en) * 2020-06-04 2022-02-22 兰州文理学院 Preparation method of molybdenum disulfide-carbon multilayer film with sub-10-nanometer bionic structure
CN114107906A (en) * 2021-11-18 2022-03-01 中国地质大学（北京） Low-friction film for inner wall of solar panel driving bearing and preparation method thereof

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