CN104270202B - Multi wave length illuminating source based on stimulated raman scattering - Google Patents
Multi wave length illuminating source based on stimulated raman scattering Download PDFInfo
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Abstract
The invention discloses a kind of multi wave length illuminating source based on silica-based stimulated raman scattering, including grating coupler, silicon-based micro ring wave filter and silica-based waveguides and output coupled waveguide；Silicon-based micro ring wave filter is Add Drop type, comprises silicon-based micro ring and first, second straight wave guide；Pump light inputs the first straight wave guide through grating coupler, it coupled to silicon-based micro ring wave filter by the first straight wave guide, the light being filtrated to get required wavelength enters silica-based waveguides, carried out stimulated Raman scattering generation one-level stokes wave by silica-based waveguides and input the second straight wave guide, a part of one-level stokes wave is coupled to export coupled waveguide by the second straight wave guide and exports multiwavelength laser at equal intervals, and remainder is coupled to silicon-based micro ring wave filter by the second straight wave guide and again inputs silicon-based micro ring.The present invention utilizes the Free Spectral Range of silicon-based micro ring and the stimulated raman scattering of silica-based waveguides to realize the multi wave length illuminating source at fixed wave length interval, and has compact conformation, the advantage such as low in energy consumption, it is adaptable in optical communication system.
Description
Technical field
The present invention relates to be applied to the integrated optic structures of optical communication field, be specifically related to based on being excited to draw
The multi wave length illuminating source of graceful scattering effect.
Background technology
In dense wavelength division or Frequency Division Multiplexing system, it usually needs arrange multiple path laser in transmitters
And power supply, this scheme system is complicated, bulky, relatively costly.To this end, scientist proposes
Utilize the scheme of single source output multiwavelength laser, such as based on highly nonlinear optical fiber optical frequency
Comb, utilizes phase-modulator expanded laser light frequency spectrum to form discrete multi-wavelength spectrum source, thus obtains
It is applicable to the wavelength of multi-channel optical fibre communication, but, above-mentioned light source can not export multi-wavelength at equal intervals,
And integrated level needs to be improved further.
Along with the development of integrated optics, the high speed development of the most silica-based integrated optical device, the most multiple
Silica-based optical integrated device has reached the standard of application.Silica-based integrated optical device has compact conformation, power consumption
The plurality of advantages such as low, the development trend that integrated optical communication system is necessarily following.Therefore, the most sharp
Manufacture multi wave length illuminating source at equal intervals with silica-based integrated optical device and become the emphasis of current research.
Summary of the invention
The technical problem to be solved is how to utilize silica-based integrated optical device to realize integrated form etc.
The problem of interval multi wave length illuminating source.
In order to solve above-mentioned technical problem, the technical solution adopted in the present invention is to provide a kind of based on silicon
The multi wave length illuminating source of base stimulated raman scattering, including grating coupler, silicon-based micro ring wave filter with
And silica-based waveguides and output coupled waveguide；Described silicon-based micro ring wave filter comprise silicon-based micro ring and first,
Second straight wave guide, described silicon-based micro ring forms upper and lower speech channel micro-ring resonant cavity, and described first, second
Straight wave guide be arranged in parallel and couples with silicon-based micro ring respectively；
Pump light inputs described first straight wave guide through described grating coupler, by described first straight wave guide coupling
Being bonded to described silicon-based micro ring wave filter, the light being filtrated to get required wavelength enters described silica-based waveguides, by
Described silica-based waveguides carries out stimulated Raman scattering and produces one-level stokes wave input the described second straight ripple
Leading, it is defeated that a part of one-level stokes wave is coupled to described output coupled waveguide by described second straight wave guide
Going out multiwavelength laser at equal intervals, remainder is inputted described silicon-based micro ring again by described second straight wave guide.
In above-mentioned multi wave length illuminating source based on silica-based stimulated raman scattering, described silicon-based micro ring mistake
Filter obtains the wavelength interval of the light of required wavelength and is reflected by the group of micro-loop radius and first, second straight wave guide
Rate is determined, wavelength difference FSR between adjacent resonance peak can be expressed as:
Wherein, R is silicon-based micro ring radius, ngThe first, second straight wave guide group for silicon-based micro ring wave filter
Refractive index, c is the light velocity.
In above-mentioned multi wave length illuminating source based on silica-based stimulated raman scattering, described silica-based waveguides
The one-level stokes wave of stimulated raman scattering and pump light frequency displacement are fixed as 15.6THz.
In above-mentioned multi wave length illuminating source based on silica-based stimulated raman scattering, described silica-based waveguides is long
Degree is between 1mm～10cm.
In above-mentioned multi wave length illuminating source based on silica-based stimulated raman scattering, in described silica-based waveguides
The flat area of both sides carries out heavy metal doping, and side is P+ doped region, and opposite side is N+ doped region,
Form PIN structural heavy metal doped region.
In above-mentioned multi wave length illuminating source based on silica-based stimulated raman scattering, described heavy metal is adulterated
Region is 500nm～1000nm with the spacing in silica-based waveguides core district.
In above-mentioned multi wave length illuminating source based on silica-based stimulated raman scattering, described grating coupler
Dielectric substrate under be coated with the golden film of one layer of 100nm.
In above-mentioned multi wave length illuminating source based on silica-based stimulated raman scattering, described defeated by regulation
Go out the light splitting of coupled waveguide and the coupling space described one-level stokes wave of control of described second straight wave guide
Ratio.
The present invention utilizes the Free Spectral Range of silicon-based micro ring and the stimulated raman scattering of silica-based waveguides
Realize the multi wave length illuminating source at fixed wave length interval, owing to the Stokes shift of stimulated Raman scattering is with pump
Pu light has fixing interval, and silica-based waveguides can be transmitted in the range of wavelength is 1.1～6.5um,
Therefore by properly choosing pump light, the wavelength needed can be obtained, and emission wavelength bandwidth can reach
Tens nanometer, and owing to having compact conformation, the plurality of advantages such as low in energy consumption, it is highly suitable for optic communication
System uses as multi wave length illuminating source.
Accompanying drawing explanation
Fig. 1 is the structure chart that the present invention carries multi wave length illuminating source based on silica-based stimulated raman scattering；
Fig. 2 is that in the present invention, flat board district PIN structural heavy metal doped region in silica-based waveguides both sides shows
It is intended to；
Fig. 3 be in the present invention coupling efficiency of gold-plated film grating coupler with wavelength change schematic diagram；
Fig. 4 be in the present invention coupling efficiency of grating coupler with wavelength change schematic diagram.
Detailed description of the invention
Stimulated Raman scattering is the electron excitation in optical electric field and the atom of light laser, vibration in molecule
Or produce with the lattice in crystal, there is the strongest characteristic of being excited, i.e. with in laser instrument
Stimulated Light-emission has similar characteristics: high directivity, and scattering strength is high.And stimulated Raman scattering is a kind of
Typical nonlinear effect, the Stokes shift of stimulated Raman scattering with pump light has fixing between
Every, present invention utilizes stimulated Raman scattering and provide a kind of based on silica-based stimulated raman scattering
Multi wave length illuminating source, is described in detail the present invention below in conjunction with Figure of description and specific embodiment.
As it is shown in figure 1, the multi wave length illuminating source based on silica-based stimulated raman scattering that the present invention provides
Including: grating coupler 101, silicon-based micro ring wave filter and silica-based waveguides 104 and output coupled waveguide
105；Silicon-based micro ring wave filter comprises silicon-based micro ring 102 and the first straight wave guide 103 and the second straight wave guide
106, silicon-based micro ring 102 forms upper and lower speech channel micro-ring resonant cavity, and first, second straight wave guide is parallel to be set
Put and couple with silicon-based micro ring 102 respectively.
Pump light inputs the first straight wave guide 103 through grating coupler 101；Coupled by the first straight wave guide 103
To silicon-based micro ring wave filter, it is filtrated to get the light of required wavelength, enters silica-based waveguides 104, by silica-based ripple
Lead 104 carry out stimulated Raman scattering produce one-level stokes wave input the second straight wave guide 106, a part
One-level stokes wave is coupled to export coupled waveguide 105 by the second straight wave guide 106 and exports the most
Wavelength laser, wavelength interval selects 10% equal to the Free Spectral Range of silicon-based micro ring, output coupled ratio
Output, remainder is again inputted silicon-based micro ring 102 by the second straight wave guide 106.
In the present invention, silicon-based micro ring wave filter is Add/drop Voice Channel type micro-loop (also referred to as Add-Drop type),
Silicon-based micro ring and two straight parallel waveguides coupling, Add end and Drop end are exactly the upper and lower speech channel of wave filter,
This silicon-based micro ring wave filter is capable of the selection to optical wavelength, can select required from multiple wavelength
Wavelength, other wavelength are then blocked.
Resonance peak in the silicon-based micro ring transmission spectrum of this silicon-based micro ring wave filter is periodically to occur, phase
Wavelength difference FSR between adjacent resonance peak can be expressed as:
Or it is expressed as:
Wherein R is silicon-based micro ring radius, ngFor the waveguide group index of silicon-based micro ring wave filter, λ is
Silicon-based micro ring resonance wavelength, λ size can be regulated by the thermo-optic effect of silicon materials and electrooptic effect, c
For the light velocity, can be seen that silicon-based micro ring filters filter obtains the ripple of the light of required wavelength from formula (1)
Long interval is determined by the group index of silicon-based micro ring radius and first, second straight wave guide, the most permissible
Wavelength interval according to multi wave length illuminating source requires to set R；Such as width is the single mode waveguide of 500nm,
Available Rsoft software emulation obtains group index ngIt is 3.6, if multi wave length illuminating source in the present invention
Wavelength interval select 50GHz, then from formula (1)If
The wavelength interval of multi wave length illuminating source selects 100GHz, then can try to achieve R=133 μm.
Stimulated raman scattering is a kind of typical nonlinear effect, and the process of Raman scattering effect is such as
Under: in any molecular media, spontaneous Raman scattering by luminous power incident for sub-fraction from light beam
Transferring in the light beam that another bundle frequency moves down, the frequency amount of moving down is determined by the vibration mode of medium molecule.
In the present invention, incident illumination is pump light, and the frequency displacement light of generation is referred to as stokes light, according to
Document Jalali, B.et al. " Prospects for silicon mid-IR Raman lasers ".
IEEE J.Sel.Top.Quant.Electron.12,1,618 1627 (2006). can find,
Single crystal silicon material Raman gain coefficienct at 1550nm wavelength is 20cm/GW, is common high non-linearity
Nearly 20,000 times of optical fiber (11/ (W km-1))；Also know that from the document, being subject to of silica-based waveguides
The one-level Stokes shift swashing Raman scattering effect is 15.6THz, i.e. one-level stokes wave and pumping
Optical frequency shift is fixed as 15.6THz, and two grades of stokes waves are fixed as one-level stoke with pump light frequency displacement
2 times of this frequency displacement, i.e. 31.2THz, therefore can select suitable pump light by wavelength as required, when
Select wavelength be 1480nm as pump light time, then the stokes wave wavelength produced exists:
If selecting 1310nm to exist as pump wavelength, then the one-level Stokes shift produced
1430nm, two grades of Stokes shifts are at 1550nm, a width of 105GHz of one-level Stokes band；He
Two grades of Stokes bandwidth are then 1.5THz, about 12nm, and bandwidth is the widest；And three grades of Stokes bandwidth
The most wider, but three grades of Raman scattering effects are more weak.
And for the length of the silica-based waveguides for there is Raman scattering effect, be also a key word ginseng
Number, silica-based waveguides is the shortest, and the gain of generation is inadequate, does not reaches Raman threshold；And silica-based waveguides is oversize,
Owing to silica-based waveguides has absorption to pump light, pump light is caused to have absorption loss, therefore silica-based waveguides
There is a suitable value, silica-based waveguides L in lengtheffFor:
Leff=[1-exp (-αpL)]/αp。
Wherein αpBeing lost for the silica-based waveguides at pump light frequency, pump light selects 1480nm, at this ripple
The loss of strong point is about about 2dB/cm, can estimate a length of 2mm of suitable silica-based waveguides, according to
The difference of waveguide ATL actual-transmission loss, silica-based waveguides optimum length can change between 1mm～10cm.
As in figure 2 it is shown, in the silica-based waveguides that the present invention uses, owing to two-photon absorption can cause certainly
By Carriers Absorption, thus reduce the nonlinear interaction of stimulated raman scattering, so at silica-based ripple
The flat area leading 104 both sides carries out heavy metal doping, and side is P+ doped region 201, and opposite side is
N+ doped region 202, thus form the heavy metal doped region of PIN structural, will by applying reverse biased
Carrier detaches waveguide region to reduce the useful life of carrier；Even if simply by two of PIN junction
Heavy metal doped region is joined directly together, and also can effectively reduce the longevity of carrier under the effect of built in field
Life.
When applied voltage becomes reverse from forward, carrier lifetime has the biggest reduction, this is because work as
When applying forward bias, carrier is injected into silica-based waveguides core district, and when applying reverse biased, current-carrying
The injection of son becomes extracting makes the life-span of carrier effectively be reduced；Gradually increasing along with reverse biased
Greatly, the impact of carrier lifetime is gradually reduced by it, this is because the drift velocity of carrier and electric field
Not being linear relationship, along with the increase of voltage, drift velocity is the most saturated, having of corresponding carrier
The effect life-span there is also a minima.
Meanwhile, the distance between heavy metal doped region and silica-based waveguides core district also be need consider because of
Element, the extraction speed of carrier is had a major impact by it.Along with the reduction of distance, carrier service life
Life reduces the most therewith, this is because under identical voltage, distance is the nearest, heavy metal doped region and silicon
The electric field of the intrinsic region between based waveguides core district is the strongest, and the drift velocity of carrier is the biggest, extracts speed
The most faster；If but heavy metal doped region and waveguide core region hypotelorism, then can be to wave guide mode field
Causing extra loss, heavy metal doped region is 500 with the spacing in silica-based waveguides core district in the present invention
Nm～1000nm.
In the present invention, grating coupler designs for wavelength 1480nm pump light, pumping light belt
Width is ± 50nm, Fig. 4 be the coupling efficiency of grating coupler with wavelength change schematic diagram, couple at it
Peak wavelength about 1480nm；Coupling efficiency is 40%, and the cycle is 592nm, dutycycle 0.503；In order to
Improve coupling efficiency and can use the grating coupler of the golden film being coated with one layer of 100nm under dielectric substrate,
This grating coupler from the pump light of dielectric substrate projection, increases coupling efficiency, Fig. 3 by reflection
For the coupling efficiency of gold-plated film grating coupler with wavelength change schematic diagram, at pump wavelength 1480nm
Place, coupling efficiency is about 55%, and the cycle is 614nm, dutycycle 0.456, understands with Fig. 4 contrast, pump
Pu optical wavelength is when 1480nm, and gold-plated film grating coupler is higher by about 15% than the coupling efficiency of the most gold-plated film；
Gold-plated film grating coupler is higher by about 20% than the high coupling efficiency of the most gold-plated film.
In the present invention, coupling output uses the second straight wave guide of output coupled waveguide and silica-based wave filter
The directional coupled structure of coupling realizes specific light splitting ratio, by regulation output coupled waveguide and second
The coupling space of straight wave guide controls one-level stokes wave export ratio, and following table is wide silica-based of 450nm
Coupling efficiency and spacing between second straight wave guide of wave filter and the wide output coupled waveguide of 450nm
Relation:
| Spacing (μm) | Coupling efficiency (%) |
| 0.031 | 20.4% |
| 0.052 | 13.95% |
| 0.073 | 9.73% |
| 0.104 | 5.77% |
| 0.125 | 4.03% |
Obviously, those skilled in the art the present invention can be carried out various change and modification without deviating from
The spirit and scope of the present invention.So, if these amendments of the present invention and modification belong to present invention power
Profit requires and within the scope of equivalent technologies, then the present invention is also intended to comprise these changes and modification exists
In..
Claims (8)
1. multi wave length illuminating source based on silica-based stimulated raman scattering, it is characterised in that include grating
Bonder, silicon-based micro ring wave filter and silica-based waveguides and output coupled waveguide；Described silicon-based micro ring is filtered
Ripple device comprises silicon-based micro ring and first, second straight wave guide, and described silicon-based micro ring forms upper and lower speech channel
Micro-ring resonant cavity, described first, second straight wave guide be arranged in parallel and couples with described silicon-based micro ring respectively；
Pump light inputs described first straight wave guide through described grating coupler, by described first straight wave guide coupling
Being bonded to described silicon-based micro ring wave filter, the light being filtrated to get required wavelength enters described silica-based waveguides, sends out
Raw stimulated Raman scattering, the one-level stokes wave of generation inputs described second straight wave guide, a part one
Level stokes wave is coupled to described output coupled waveguide by described second straight wave guide and exports the most ripples
Long laser, remainder is inputted described silicon-based micro ring again by described second straight wave guide.
2. multi wave length illuminating source based on silica-based stimulated raman scattering as claimed in claim 1, its
Be characterised by, described silicon-based micro ring be filtrated to get the wavelength interval of the light of required wavelength by micro-loop radius and
The group index of described first, second straight wave guide is determined, wavelength difference FSR between adjacent resonance peak
Can be expressed as:
Wherein, R is silicon-based micro ring radius, ngThe first, second straight wave guide group for silicon-based micro ring wave filter
Refractive index, c is the light velocity.
3. multi wave length illuminating source based on silica-based stimulated raman scattering as claimed in claim 1, its
It is characterised by, the one-level stokes wave of the stimulated raman scattering of described silica-based waveguides and pump light
Frequency displacement is fixed as 15.6THz.
4. multi wave length illuminating source based on silica-based stimulated raman scattering as claimed in claim 1, its
Being characterised by, described silica-based waveguides length is between 1mm～10cm.
5. multi wave length illuminating source based on silica-based stimulated raman scattering as claimed in claim 1, its
Being characterised by, the flat area in described silica-based waveguides both sides carries out heavy metal doping, and side is that P+ mixes
Miscellaneous district, opposite side is N+ doped region, forms PIN structural heavy metal doped region.
6. multi wave length illuminating source based on silica-based stimulated raman scattering as claimed in claim 5, its
Being characterised by, described heavy metal doped region is 500nm～1000nm with the spacing in silica-based waveguides core district.
7. multi wave length illuminating source based on silica-based stimulated raman scattering as claimed in claim 1, its
It is characterised by, under the dielectric substrate of described grating coupler, is coated with the golden film of one layer of 100nm.
8. multi wave length illuminating source based on silica-based stimulated raman scattering as claimed in claim 1, its
It is characterised by, by regulating the coupling space control of described output coupled waveguide and described second straight wave guide
The splitting ratio of described one-level stokes wave.
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| CN109781709B (en) * | 2019-03-19 | 2021-06-01 | 重庆大学 | Optical amplification Raman spectrum detection system based on waveguide structure |
| CN110277730B (en) * | 2019-06-20 | 2020-11-10 | 中国科学院半导体研究所 | Integrated Brillouin scattering laser |
| CN110243572B (en) * | 2019-06-28 | 2021-07-27 | 中兴光电子技术有限公司 | Device and method for testing refractive index of optical waveguide group |
| CN112134137B (en) * | 2020-11-26 | 2021-02-02 | 武汉敏芯半导体股份有限公司 | Narrow linewidth laser |
| CN114967126B (en) * | 2022-06-16 | 2023-06-06 | 苏州大学 | Reverse design method of silicon-based optical micro-ring filter based on sparsity calculation |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1351278A (en) * | 2000-10-26 | 2002-05-29 | Jds尤尼费斯公司 | Multi-wavelength coherent light source ofr Raman amplication |
| WO2008018900A2 (en) * | 2006-01-03 | 2008-02-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for sensing properties of a workpiece and embedding a photonic sensor in metal |
| CN102062988A (en) * | 2010-12-27 | 2011-05-18 | 中国科学院半导体研究所 | Optical logic gate based on double parallel microring resonators |
| CN102147497A (en) * | 2011-03-25 | 2011-08-10 | 北京航空航天大学 | Method for building silicon-based coupling resonance loop structure capable of providing stimulated Raman scattering light grain |
| CN102866876A (en) * | 2012-08-22 | 2013-01-09 | 清华大学 | Single chip integrated optical matrix-vector multiplier |
-
2014
- 2014-10-21 CN CN201410560159.9A patent/CN104270202B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1351278A (en) * | 2000-10-26 | 2002-05-29 | Jds尤尼费斯公司 | Multi-wavelength coherent light source ofr Raman amplication |
| WO2008018900A2 (en) * | 2006-01-03 | 2008-02-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for sensing properties of a workpiece and embedding a photonic sensor in metal |
| CN102062988A (en) * | 2010-12-27 | 2011-05-18 | 中国科学院半导体研究所 | Optical logic gate based on double parallel microring resonators |
| CN102147497A (en) * | 2011-03-25 | 2011-08-10 | 北京航空航天大学 | Method for building silicon-based coupling resonance loop structure capable of providing stimulated Raman scattering light grain |
| CN102866876A (en) * | 2012-08-22 | 2013-01-09 | 清华大学 | Single chip integrated optical matrix-vector multiplier |
Non-Patent Citations (1)
| Title |
|---|
| Silicon microring resonators;Bogaerts Wim, et al.,;《LASER & PHOTONICS REVIEWS》;20120131;第6卷(第1期);全文 * |
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Address after: 430074, No. 88, postal academy road, Hongshan District, Hubei, Wuhan Patentee after: Wuhan post and Telecommunications Science Research Institute Co., Ltd. Address before: 430074, No. 88, postal academy road, Hongshan District, Hubei, Wuhan Patentee before: Wuhan Inst. of Post & Telecom Science |