CN104261833A - Mediated high-Q microwave medium material for mobile communication and preparation method of mediated high-Q microwave medium material - Google Patents
Mediated high-Q microwave medium material for mobile communication and preparation method of mediated high-Q microwave medium material Download PDFInfo
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- CN104261833A CN104261833A CN201410481884.7A CN201410481884A CN104261833A CN 104261833 A CN104261833 A CN 104261833A CN 201410481884 A CN201410481884 A CN 201410481884A CN 104261833 A CN104261833 A CN 104261833A
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Abstract
The invention provides a mediated high-Q microwave medium material for mobile communication. The mediated high-Q microwave medium material comprises x MO-y Ln2O3-z TiO2 and a nano-sized metal additive, wherein M comprises Ca, and one or two of Ba or Sr; Ln comprises La, and one or more of Sm, Dy, Nd, Er or Eu; the nano-sized metal additive comprises Mg, and one or more of Zr, Sn, Zn, Ni, Co or W; and x+y+z is equal to 1. The invention also provides a preparation method of the microwave medium material. The microwave medium material disclosed by the invention has a dielectric constant being 44-46, and simultaneously has a relatively high quality factor being 40,000-52,000GHz; and the temperature coefficient of resonance frequency is adjustable within the range of -12ppm/DEG C to +12ppm/DEG C.
Description
Technical field
The present invention relates to extraordinary field of electronic ceramic materials, specifically a kind of tracking exchage medium high-Q microwave dielectric material and preparation method thereof.
Background technology
Along with the fast development of micro-wave communication industry, the research work of microwave dielectric material comes into one's own day by day.Be applied to meet the requirement that the microwave resonator of 3G and 4G base station and wave filter must have good frequency selective characteristic, bandwidth, miniaturization and low cost, corresponding microwave dielectric ceramic materials must have the high quality factor (Q in (1) suitable specific inductivity (30-60), (2) simultaneously
f>=40000GHz), (3) nearly zero adjustable temperature coefficient of resonance frequency, (4) production cost is low and be easy to batch production.
At present, application request can be met and business-like microwave dielectric material mainly contains LnAlO
3-CaTiO
3system, ZrTiO
4-ZnNb
2o
6system, Ba (Mg
1/3ta
2/3) O
3(BMT), Ba (Zn
1/3ta
2/3) O
3(BZT) and Zr-Ti-Sn-O system etc., LnAlO in these materials
3-CaTiO
3although the sintering temperature of system is lower, Q
fvalue can not meet the development need of industry completely, and the part rare earth prices of raw and semifnished materials are unstable; Zr-Ti-Sn-O system and ZrTiO
4-ZnNb
2o
6the Q of system
falthough higher, specific inductivity is less than normal; The Q of BMT and BZT
falthough higher, raw materials used Ta
2o
5expensive, sintering temperature is high.In a word, the development trend of current modern communications industry to microwave dielectric material requirement be meet the comparatively large and temperature coefficient of resonance frequency of specific inductivity nearly zero adjustable while, Q to be improved as much as possible
fvalue, will reduce costs, the stability of enhancing product performance and repeatability simultaneously.
Summary of the invention
Main purpose of the present invention is that the deficiency existed for above-mentioned background technology provides a kind of specific inductivity large, Q
fbe worth high, temperature coefficient of resonance frequency is nearly zero adjustable, and cost is low, and is easy to the tracking exchage medium high-Q microwave dielectric material produced in enormous quantities.
The present invention is achieved through the following technical solutions: a kind of tracking exchage medium high-Q microwave dielectric material, and it is by x MO-y Ln
2o
3-z TiO
2with metal nano level additive composition,
Wherein, M comprises Ca, and Ln comprises La, and metal nano level additive comprises Mg,
The molar content of each component is respectively above:
The molar content of x is 5-30mol/%;
The molar content of y is 10-60mol/%;
The molar content of z is 25-75mol/%;
x+y+z＝1；
The mass percentage of metal nano level additive is 1-4wt/%.
Preferably, M also comprise in Ba or Sr one or both, wherein CaO is 5-30mol/%, BaO be 0-10mol/%, SrO is 0-10mol/%;
Ln also comprise in Sm, Dy, Nd, Er or Eu one or more, wherein La
2o
3for 10-60mol/%, Sm
2o
3for 0-5mol/%, Dy
2o
3for 0-5mol/%, Nd
2o
3for 0-5mol/%, Er
2o
3for 0-5mol/%, Eu
2o
3for 0-5mol/%;
Preferably, described metal nano level additive also comprises one or more in Zr, Sn, Zn, Ni, Co or W; Wherein Mg is 1-2wt/%, Zr be 0-2wt/%, Sn be 0-1wt/%, Zn be 0-2wt/%, Ni be 0-1wt/%, Co be 0-1wt/%, W is 0-0.5wt/%.
Another object of the present invention is to provide the preparation method of above-mentioned tracking exchage medium high-Q microwave dielectric material.
It is achieved by the following technical solution: a kind of method preparing above-mentioned tracking exchage medium high-Q microwave dielectric material, and its step comprises:
(1) MCO is taken by the mol ratio of raw material
3, Ln
2o
3and TiO
2, then add water and zirconium ball, in ball mill, slip is dried after becoming slip by ball milling;
(2) powder after drying is crossed 40 mesh sieves, and at 1000-1200 DEG C, calcine cooling after 3 hours obtain ceramic powder;
(3) pour into adding metal nano level additive in ceramic powder in ball mill, add water and zirconium ball, slip is dried after becoming slip by ball milling again;
(4) in above-mentioned powder, add polyvinyl alcohol solution and carry out granulation, and cross 40 mesh sieves after grinding evenly;
(5) powder after granulation is loaded mould dry-pressing formed under the pressure of 120MPa; Then by the ceramic green after shaping except no-bonder, after finally sintering 2-12 hour with the temperature rise rate of 5 DEG C/min at 1400-1550 DEG C, furnace cooling obtains the high performance microwave medium ceramic material sintered.
Preferably, be that ball milling becomes slip in 24 hours in ball mill in described step (1), then put into baking oven and be dried into powder at 120 DEG C.
Preferably, be that ball milling becomes slip in 24 hours in ball mill in described step (3), then put into baking oven and be dried into powder at 120 DEG C.
Preferably, in described step (3), metal nano level additive is by after metal alkoxide, diethanolamine, alcoholic solvent, water mixing, through the gel metal nanometer additive that hydrolysis, polycondensation obtain.
Preferably, the mass percentage of the polyvinyl alcohol solution added in described step (4) is 10%, and add-on is 7-10%.
Preferably, removing binding agent described in described step (5) is at 800 DEG C be that 5 DEG C/min heats removing in 2 hours with temperature rise rate.
In the above-mentioned methods, MO oxide compound is due to character instability, and general raw material adopts MCO
3form add, the component of actual stupalith exists with MO form.The concrete fineness of the ball milling form slurry in step (1) and (3) is determined according to the character of stupalith, is those skilled in the art's conventional means.
Tracking exchage medium high-Q microwave dielectric material of the present invention, its specific inductivity is 44-46, has the quality factor that 40000-52000GHz is higher simultaneously, and temperature coefficient of resonance frequency is adjustable in-12ppm/ DEG C ~+12ppm/ DEG C.Tracking exchage medium high-Q microwave dielectric material of the present invention can be used as the key core material of the electronic devices and components such as microwave mobile communication wave filter, resonator, vibrator and electrical condenser, be widely used in the modern communications industries such as satellite communications, mobile communication, Global Positioning System, Bluetooth technology and WLAN (wireless local area network), there is important industrial application value.
Embodiment
By the following specific examples further illustrate the invention:
Embodiment 1
(1) CaCO that purity is greater than 99.95% is accurately taken
30.11mol, BaCO
30.008mol, La
2o
30.19mol, Sm
2o
30.012mol and TiO
20.42mol, pours in resin balls grinding jar, adds deionized water and zirconium ball; The weight ratio of three is: material: ball: deionized water=1:2:1.5; Ball milling 24 hours in ball mill, to ensure to mix; After discharging, slip is put into baking oven, dry at 120 DEG C and obtain the powder after drying;
(2) powder after oven dry is crossed 40 mesh sieves, calcine 3 hours at 1200 DEG C subsequently, furnace cooling, obtains ceramic powder;
(3) 1wt/% chemical pure magnesium alkoxide (Mg) is got and 1.5wt/% chemical pure zinc alkoxide (Zn) is respectively dissolved in dehydrated alcohol, respectively add appropriate diethanolamine to mix, respectively add deionized water subsequently, by hydrolysis, polycondensation, then form gel, obtained granularity is nano level liquid phase Mg addition material and the Zn addition material of 50-60nm.Wherein above-mentioned alkoxide can be ethanol, ethylene glycol and propyl carbinol.
(4) synthetic ceramic powder is poured in resin balls grinding jar together with nano level liquid phase addition material, add deionized water and zirconium ball; The weight ratio of three is: material: ball: deionized water=1:2:0.75; Ball milling 24 hours in ball mill, to ensure the powder obtaining epigranular about 0.12 μm; After discharging, slip is put into baking oven, dry at 120 DEG C;
(5) concentration adding 7-10Wt% in above-mentioned powder is after the drying the polyvinyl alcohol solution of 10Wt%, carries out granulation, and crosses 40 mesh sieves after grinding evenly in mortar; Powder after granulation is loaded mould is dry-pressing formed under the pressure of 120MPa is
cylinder; Then the right cylinder after shaping is heated at 800 DEG C 2 hours with except no-bonder, its temperature rise rate is 5 DEG C/min, finally at 1400-1550 DEG C, sinter 2-12 hour with identical temperature rise rate, EP (end of program) is closed temperature regulating device furnace cooling and is obtained microwave dielectric material 1.
Embodiment 2
CaCO
30.108mol, SrCO
30.008mol, La
2o
30.192mol, Sm
2o
30.0102mol, Dy
2o
30.008mol, TiO
20.418mol, 2wt/% magnesium alkoxide (Mg) and 1wt/% nickel alkoxide (Ni).Preparation method is identical with embodiment 1, obtains microwave dielectric material 2.
Embodiment 3
CaCO
30.118mol, La
2o
30.194mol, Eu
2o
30.0122mol, TiO
20.420mol, 1.5wt/% magnesium alkoxide (Mg) and 1wt/% tin alkoxide (Sn).Preparation method is identical with embodiment 1, obtains microwave dielectric material 3.
Embodiment 4
CaCO
30.112mol, BaCO
30.0036mol, SrCO
30.003mol, La
2o
30.198mol, Sm
2o
30.0112mol, TiO
20.422mol, 2.5wt/% zinc alkoxide (Zn) and 0.5wt/% cobalt alkoxide (Co).Preparation method is identical with embodiment 1, obtains microwave dielectric material 4.
Embodiment 5
CaCO
30.12mol, La
2o
30.196mol, Er
2o
30.0122mol, TiO
20.418mol, 1wt/% magnesium alkoxide (Mg), 2wt/% zinc alkoxide (Zn) and 1wt/% tin alkoxide (Sn).Preparation method is identical with embodiment 1, obtains microwave dielectric material 5.
Embodiment 6
CaCO
30.0375mol, SrCO
30.0375mol, La
2o
30.375mol, TiO
20.3mol, 2wt/% magnesium alkoxide (Mg), 1wt/% zirconium alkoxide (Zr) and 0.3wt/% tungsten alkoxide (W).Preparation method is identical with embodiment 1, obtains microwave dielectric material 6.
Embodiment 7
CaCO
30.112mol, BaCO
30.007mol, La
2o
30.195mol, Sm
2o
30.0108mol, Nd
2o
30.0024mol, TiO
20.422mol, 2wt/% magnesium alkoxide (Mg), 0.5wt/% tin alkoxide (Sn) and 0.5wt/% tungsten alkoxide (W).Preparation method is identical with embodiment 1, obtains microwave dielectric material 7.
Embodiment 8
CaCO
30.114mol, BaCO
30.002mol, SrCO
30.004mol, La
2o
30.198mol, Nd
2o
30.01mol, TiO
20.416mol, 1wt/% magnesium alkoxide (Mg), 2wt/% zirconium alkoxide (Zr) and 0.5wt/% cobalt alkoxide (Co).Preparation method is identical with embodiment 1, obtains microwave dielectric material 8.
Embodiment 9
CaCO
30.115mol, SrCO
30.004mol, La
2o
30.195mol, Eu
2o
30.002mol, Er
2o
30.002mol, TiO
20.418mol, 1wt/% zinc alkoxide (Zn), 1wt/% tin alkoxide (Sn), 1wt/% magnesium alkoxide (Mg), 1wt/% cobalt alkoxide (Co).Preparation method is identical with embodiment 1, obtains microwave dielectric material 9.
Embodiment 10
CaCO
30.114mol, BaCO
30.007mol, La
2o
30.188mol, Nd
2o
30.008mol, Eu
2o
30.012mol, TiO
20.422mol, 1wt/% zinc alkoxide (Zn), 0.5wt/% nickel alkoxide (Ni), 1wt/% magnesium alkoxide (Mg), 0.5wt/% tungsten alkoxide (W).Preparation method is identical with embodiment 1, obtains microwave dielectric material 10.
Embodiment 11
CaCO
30.0375mol, La
2o
30.2625mol, Sm
2o
30.0375mol, Dy
2o
30.0375mol, Nd
2o
30.0375mol, Er
2o
30.0375mol, Eu
2o
30.0375mol, TiO
20.2625mol, 1wt/% magnesium alkoxide (Mg), 2wt/% zirconium alkoxide (Zr), 1wt/% cobalt alkoxide (Co).Preparation method is identical with embodiment 1, obtains microwave dielectric material 11.
Embodiment 12
CaCO
30.075mol, BaCO
30.075mol, SrCO
30.075mol, La
2o
30.075mol, TiO
20.45mol, 1wt/% magnesium alkoxide (Mg).Preparation method is identical with embodiment 1, obtains microwave dielectric material 12.
Embodiment 13
CaCO
30.225mol, La
2o
30.3mol, Er
2o
30.0375mol, TiO
20.1875mol, 1wt/% magnesium alkoxide (Mg).Preparation method is identical with embodiment 1, obtains microwave dielectric material 13.
Embodiment 14
CaCO
30.075mol, La
2o
30.1125mol, TiO
20.5625mol, 1wt/% magnesium alkoxide (Mg).Preparation method is identical with embodiment 1, obtains microwave dielectric material 14.
Embodiment 15
CaCO
30.1125mol, La
2o
30.45mol, TiO
20.1875mol, 1wt/% magnesium alkoxide (Mg).Preparation method is identical with embodiment 1, obtains microwave dielectric material 15.
Adopt Hakki-Coleman method, under 3GHz frequency, to the specific inductivity of the microwave dielectric material of embodiment 1-15, Q
fvalue and temperature coefficient of resonance frequency are tested, and test result is as shown in table 1.
Table 1 microwave dielectric material 1-15 performance.
Claims (9)
1. a tracking exchage medium high-Q microwave dielectric material, it is by x MO-y Ln
2o
3-z TiO
2with metal nano level additive composition,
Wherein, M comprises Ca, and Ln comprises La, and metal nano level additive comprises Mg,
The molar content of each component is respectively above:
The molar content of x is 5-30mol/%;
The molar content of y is 10-60mol/%;
The molar content of z is 25-75mol/%;
x+y+z＝1；
The mass percentage of metal nano level additive is 1-4wt/%.
2. tracking exchage medium high-Q microwave dielectric material according to claim 1, is characterized in that: M also comprise in Ba or Sr one or both, wherein CaO is 5-30mol/%, BaO be 0-10mol/%, SrO is 0-10mol/%;
Ln also comprise in Sm, Dy, Nd, Er or Eu one or more, wherein La
2o
3for 10-60mol/%, Sm
2o
3for 0-5mol/%, Dy
2o
3for 0-5mol/%, Nd
2o
3for 0-5mol/%, Er
2o
3for 0-5mol/%, Eu
2o
3for 0-5mol/%.
3. tracking exchage medium high-Q microwave dielectric material according to claim 1 and 2, is characterized in that: described metal nano level additive also comprise in Zr, Sn, Zn, Ni, Co or W one or more; Wherein Mg is 1-2wt/%, Zr be 0-2wt/%, Sn be 0-1wt/%, Zn be 0-2wt/%, Ni be 0-1wt/%, Co be 0-1wt/%, W is 0-0.5wt/%.
4. prepare a method for tracking exchage medium high-Q microwave dielectric material described in claim 1, its step comprises:
(1) MCO is taken by the mol ratio of raw materials
3, Ln
2o
3and TiO
2, then add water and zirconium ball, in ball mill, slip is dried after becoming slip by ball milling;
(2) powder after drying is crossed 40 mesh sieves, and at 1000-1200 DEG C, calcine cooling after 3 hours obtain ceramic powder;
(3) pour into adding metal nano level additive in ceramic powder in ball mill, add water and zirconium ball, slip is dried after becoming slip by ball milling again;
(4) in above-mentioned powder, add polyvinyl alcohol solution and carry out granulation, and cross 40 mesh sieves after grinding evenly;
(5) powder after granulation is loaded mould dry-pressing formed under the pressure of 120MPa; Then by the ceramic green after shaping except no-bonder, after finally sintering 2-12 hour with the temperature rise rate of 5 DEG C/min at 1400-1550 DEG C, furnace cooling obtains the tracking exchage medium high-Q microwave dielectric material sintered.
5. the preparation method of tracking exchage medium high-Q microwave dielectric material according to claim 2, is characterized in that: be that ball milling becomes slip in 24 hours in ball mill in described step (1), then put into baking oven and be dried into powder at 120 DEG C.
6. the preparation method of tracking exchage medium high-Q microwave dielectric material according to claim 2, is characterized in that: be that ball milling becomes slip in 24 hours in ball mill in described step (3), then put into baking oven and be dried into powder at 120 DEG C.
7. the preparation method of tracking exchage medium high-Q microwave dielectric material according to claim 2, it is characterized in that: in described step (3), metal nano level additive is by after metal alkoxide, diethanolamine, alcoholic solvent, water mixing, through the gel metal nanometer additive that hydrolysis, polycondensation obtain.
8. the preparation method of tracking exchage medium high-Q microwave dielectric material according to claim 2, is characterized in that: the mass percentage of the polyvinyl alcohol solution added in described step (4) is 10%, and add-on is 7-10%.
9. the preparation method of high tracking exchage medium high-Q microwave dielectric material according to claim 2, is characterized in that: removing binding agent described in described step (5) is at 800 DEG C be that 5 DEG C/min heats removing in 2 hours with temperature rise rate.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105314976A (en) * | 2015-11-12 | 2016-02-10 | 西安交通大学苏州研究院 | Ti-based low loss K value microwave dielectric ceramic and preparation method thereof |
| CN110282968A (en) * | 2019-06-13 | 2019-09-27 | 山东格仑特电动科技有限公司 | A kind of microwave dielectric ceramic materials and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1367155A (en) * | 2001-01-22 | 2002-09-04 | 兰招武 | High-frequency high-permittivity microwave medium ceramics and its production method |
| CN102491734A (en) * | 2011-12-08 | 2012-06-13 | 福州大学 | Medium high-Q microwave dielectric ceramics and preparation method thereof |
-
2014
- 2014-09-19 CN CN201410481884.7A patent/CN104261833A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1367155A (en) * | 2001-01-22 | 2002-09-04 | 兰招武 | High-frequency high-permittivity microwave medium ceramics and its production method |
| CN102491734A (en) * | 2011-12-08 | 2012-06-13 | 福州大学 | Medium high-Q microwave dielectric ceramics and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105314976A (en) * | 2015-11-12 | 2016-02-10 | 西安交通大学苏州研究院 | Ti-based low loss K value microwave dielectric ceramic and preparation method thereof |
| CN105314976B (en) * | 2015-11-12 | 2017-10-31 | 西安交通大学苏州研究院 | K value microwave-medium ceramics and preparation method thereof in Ti base low-losses |
| CN110282968A (en) * | 2019-06-13 | 2019-09-27 | 山东格仑特电动科技有限公司 | A kind of microwave dielectric ceramic materials and preparation method thereof |
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