CN1042572A - With the film forming device of ion beam reactive sputtering method - Google Patents
With the film forming device of ion beam reactive sputtering method Download PDFInfo
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- CN1042572A CN1042572A CN 88109745 CN88109745A CN1042572A CN 1042572 A CN1042572 A CN 1042572A CN 88109745 CN88109745 CN 88109745 CN 88109745 A CN88109745 A CN 88109745A CN 1042572 A CN1042572 A CN 1042572A
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Abstract
With the film forming device of ion beam reactive sputtering method, be mainly used in and make thin multicomponent films and multicomponent multilayer film.The present invention is provided with 2～4 plasma sputter sources in the target chamber of device, adopt focusedion source, is that central distribution is around substrate with the substrate.Each ion source the place ahead should have a bobbing target that is assembled with the target sheet of 4 differing materials mutually.Be provided with a no filament anode irradiate ion source that is used for the irradiation substrate facing to substrate, as use radio frequency ion source.
2～4 plasma sputter sources have the target of 4 kinds of materials to cooperate with every group, and can make has 4 layers in each periodic thickness, the complete unduplicated Adjustable structure multilayer film of every composition of layer.The energy long term operation of irradiate ion source is in reactant gases.
Description
The invention belongs to the device of making many compositions film and multicomponent multilayer film of the sputter of multi beam ionic reaction.
Japan's " Applied Physics " has put down in writing the film forming device of a kind of present state-of-the-art ion beam reactive sputtering in No. 2 P119～120 of 1986 the 56th volumes.This device has a plasma sputter source and one group of target in target chamber.The target of a kind of material of ion beam bombardment that ion source produces, the electrodeposition substance that sputters on the target sheet forms film on substrate.Also have one to be used for the irradiation substrate in addition with irradiate ion source of the same type, plasma sputter source.The greatest drawback of this device is to make every layer of film that only contains a kind of target composition on same substrate, or embeds another kind of material at most again; As making target with many compositions compound, then can not accurately control each composition ratio, thereby limit the kind of making film greatly, be not suitable for making many compositions film and many compositions multilayer film of composition complexity especially.Because filament cathode is arranged, will bring the hetero-ion of filament material to pollute in the irradiate ion source.The more important thing is that filament can be corroded in reactant gases, thereby can not lead to into reactant gases, or only can sneak into seldom amount (10
-4), even so also can shorten ion source life, generally have only tens hours, reduced the reliability and the use value of device.
The objective of the invention is in order to overcome above defective, provide a kind of and make many compositions film and many compositions multilayer film of composition complexity with multi beam ionic reaction sputtering method, be easy to accurately control each composition ratio, the radiation ion source can directly feed reactant gases, the device that reliability is high.
The object of the present invention is achieved like this: in the target chamber of device 2～4 plasma sputter sources being set, generally adopting gas ion source, is that central distribution is around substrate with the substrate.Be provided with one group of bobbing target in that each ion source is corresponding along the place ahead that line penetrates.The cross section of bobbing target is a rectangle.Be fixed with several piece target sheet on every group of target, can make, as metal, isolator, semi-conductor or organic materials with differing materials.Be provided with an irradiate ion source that is used for the no filament cathode of irradiation substrate facing to substrate, it can feed sputter gas, and main is to feed reactant gases.
Device bombards target sheet on corresponding one group of bobbing target simultaneously with the ionic fluid of 2～4 or wherein several plasma sputters source generation, control the parameter of each ionic fluid respectively, the material mixed deposit that sputters on the differing materials target sheet forms many compositions film of predetermined composition ratio on substrate.After performing a skim, bobbing target changes the array mode of respectively organizing target as required, makes many compositions multilayer film.At film forming pre irradiation substrate, can remove the impurity of substrate surface with the irradiate ion source; When film forming, feed the ion beam irradiation substrate that reactant gases produces, the sputter that reacts, reaching increases the chemical reaction probability, improves the performance of film, as effects such as the adhesion strength that increases film, density.The present invention is particularly suitable for making the adjustable multilayer film of many constituent structures.The irradiate ion source energy long term operation of no filament cathode has improved the work-ing life and the reliability of device in reactant gases.
Further specify concrete structure embodiment of the present invention below in conjunction with accompanying drawing.
Fig. 1 is with the film forming apparatus structure schematic diagram of ion beam reactive sputtering method.
Fig. 2 is the bobbing target sectional view.
Fig. 3 is the radio frequency ion source section of structure.
Express the present invention among Fig. 1 and include target chamber (1), be connected with vacuum system (2), airing system (4), (5) and cold-trap (3) with target chamber.Target chamber is made with stainless steel.Vacuum system can make and reach base vacuum 10 in the target chamber
-7～10
-8Torr; Working vacuum 10
-4～10
-5Torr.Airing system can pass through irradiate ion source (6), also can be by through passage (7) sputter gas or reactant gases being sent in the target chamber.Generally make sputter gas with Ar gas; Use O
2, N
2, H
2Or CH
4Make reactant gases.Rotary work-table (8) is installed in the target chamber, and worktable is done uniform rotation during the system film, and the material that sputters on the target can be deposited on the substrate (10) equably.Pair plate of heating (9) of substrate heating is arranged between worktable and the substrate.Substrate the place ahead is provided with plate washer (11), during the system film plate washer is removed.
The present invention can install 2～4 plasma sputter sources (12) in target chamber, consider in concrete the enforcement to be suitable for and the minimizing cost, and preferred plan is that 3 plasma sputter sources (12) are installed.Preferably adopt focusedion source, to improve ion source density and rate of film build.Its technical indicator is: focused beam spot φ 30mm; Energy 0.5～2Kev; Line＞150mA; Beam intensity 25mA/-cm
2The plasma sputter source is that the center preferably is distributed in around the substrate with the substrate.The corresponding one group of bobbing target (13) that is provided with in the place ahead that penetrates along line in each plasma sputter source.Expressing the bobbing target cross section among Fig. 2 is rectangle.4 target sheets (a) (b) (c) (d) are separately fixed on the outer side of bobbing target.Can do target with metal, semi-conductor, isolator or organic materials, for example: Y, Bi, La, Pb, Si, Ge, Al
2O
3, PbTiO
3, BaTiO
3, polyethylene, tetrafluoroethylene.
Be provided with an irradiate ion source (6) that is used for the no filament cathode of radiation substrate facing to substrate in the target chamber.It can adopt radio frequency ion source, also can adopt microwave ion source.Fig. 3 is the radio frequency ion source section of structure.The upper end of source body (14) is the discharge tube (19) of belt electrode (17) among Fig. 3.The external magneticfield coil (15) that is provided with in source.The magneticfield coil below is HF oscillation coil (16).It is interior by ionization that reactant gases enters the source body along the direction of arrow, and the ionic fluid of formation is drawn through body lower end, source porous shielding slab (18) and extraction pole (19).The all available quartz glass plate of source body, discharge tube and shielding slab is made.Extraction pole is generally used the less high melting-point material of sputtering yield, makes as molybdenum.Method is at the below of shielding slab (18) direct sputter last layer metal preferably, as aluminium or stainless steel as line extraction pole (19), solved two porous plates requires to guarantee concentricity in processing with when installing difficulty, so just can obtain preferably line and draw effect.Extraction pole can be done thinlyyer, has reduced the sputter of extraction pole material and has polluted.The technical indicator of radio frequency ion source is: beam diameter φ 30mm; Energy 0.3～2.5Kev; Line 5～10mA; Beam intensity 0.5mA/cm
2Radio frequency ion source can use reactant gases, also can use sputter gas.
The present invention compared with prior art has following advantage:
1.2～4 plasma sputter sources have the target of 4 kinds of materials to cooperate with every group, can produce has 4 layers in the periodic thickness, the adjustable multilayer film of the complete unduplicated structure of every layer composition. If in a kind of target sheet, imbed again the material of other composition, also can make the more complicated film of composition.
2. the parameter in various plasma sputter source can independently be controlled, thereby can accurately control each composition ratio of film former.
3. used irradiate ion source is because no filament cathode, can in reacting gas, work for a long time (200～300) hour, and can reduce the heteroion pollution that filament material brings, thereby service life and the effect of device have been improved on the whole, directly the sputter layer of metal consists of the extraction pole of radio frequency ion source below the barricade of porous, avoid processing and will guarantee the difficulty of hole, garden concentricity on the two porous plates when installing, thus educt beaming flow effectively. Because end tab can be done thinlyyer, has also reduced pollution.
4. with reactant gases ion beam irradiation substrate, can make reactant gases participate in the sputter reaction during film forming and improve the chemical reaction probability, improve the performance of film.Particularly introduce by the reactant gases of ionization from the irradiate ion source, its effect be better than directly reactant gases is passed to substrate from passage near.
Claims (4)
1, with the film forming device of ion beam reactive sputtering method, include target chamber [1], the vacuum system that is connected with target chamber [2], airing system [4], [5] and cold-trap [3], rotary work-table [8] is housed in the target chamber, the plate [9] of heating between worktable and the substrate [10], substrate the place ahead is provided with plate washer [11], it is characterized in that being provided with in target chamber 2～4 plasma sputter sources [12], with the substrate be central distribution around substrate, should there be one group of bobbing target [13] in each plasma sputter source mutually along the place ahead that line penetrates; Be provided with a no filament anodic radiation ion source [6] facing to substrate.
2, film deposition system as claimed in claim 1 is characterized in that said bobbing target (13) cross section is a rectangle, is fixed with 4 target sheets (a) (b) (c) (d) on the outer side respectively, material available metal, semi-conductor, isolator or the organic materials of target sheet.
3, film deposition system as claimed in claim 1, it is characterized in that not having the filament anode ion source is radio frequency ion source, source body (14) upper end is the discharge tube (19) of belt electrode (17), the external magneticfield coil (15) that is provided with in source, and the magneticfield coil below is HF oscillation coil (16).There are shielding slab (18) and line extraction pole (19) in body lower end, source.
4, film deposition system as claimed in claim 3 is characterized in that line extraction pole (19) directly uses the below of metal sputtering in shielding slab (18).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 88109745 CN1017354B (en) | 1988-11-09 | 1988-11-09 | Membrane forming device using sputtering method of ion beam reaction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 88109745 CN1017354B (en) | 1988-11-09 | 1988-11-09 | Membrane forming device using sputtering method of ion beam reaction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1042572A true CN1042572A (en) | 1990-05-30 |
| CN1017354B CN1017354B (en) | 1992-07-08 |
Family
ID=4835463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 88109745 Expired CN1017354B (en) | 1988-11-09 | 1988-11-09 | Membrane forming device using sputtering method of ion beam reaction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1017354B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1035201C (en) * | 1990-11-01 | 1997-06-18 | 中国科学院上海冶金研究所 | Method for synthesizing thin layer of titanium nitride by ionic beam increasing sedimentation |
| CN101908461A (en) * | 2010-07-08 | 2010-12-08 | 中国电子科技集团公司第十二研究所 | Ion beam surface treatment equipment and method for suppressing secondary electron emission |
| CN101880862B (en) * | 2009-05-06 | 2011-12-07 | 中国科学院微电子研究所 | Multifunctional ion beam sputtering equipment |
| CN102290341A (en) * | 2007-09-27 | 2011-12-21 | 汉辰科技股份有限公司 | Ion implantation method |
| CN101855381B (en) * | 2008-12-22 | 2012-07-04 | 佳能安内华股份有限公司 | Sputtering system and film deposition method |
| CN102324383B (en) * | 2007-09-27 | 2013-10-16 | 汉辰科技股份有限公司 | Ion implantation method and method for adjusting ion beam scanning rate |
| CN106939409A (en) * | 2017-03-28 | 2017-07-11 | 中山市博顿光电科技有限公司 | A kind of device and method of multi-ion source sputtering production film |
| TWI695080B (en) * | 2015-05-14 | 2020-06-01 | 美商瓦里安半導體設備公司 | Processing apparatus for multilayer deposition |
-
1988
- 1988-11-09 CN CN 88109745 patent/CN1017354B/en not_active Expired
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1035201C (en) * | 1990-11-01 | 1997-06-18 | 中国科学院上海冶金研究所 | Method for synthesizing thin layer of titanium nitride by ionic beam increasing sedimentation |
| CN102290341A (en) * | 2007-09-27 | 2011-12-21 | 汉辰科技股份有限公司 | Ion implantation method |
| CN102290341B (en) * | 2007-09-27 | 2013-07-10 | 汉辰科技股份有限公司 | Ion implantation method |
| CN102324383B (en) * | 2007-09-27 | 2013-10-16 | 汉辰科技股份有限公司 | Ion implantation method and method for adjusting ion beam scanning rate |
| CN101855381B (en) * | 2008-12-22 | 2012-07-04 | 佳能安内华股份有限公司 | Sputtering system and film deposition method |
| CN101880862B (en) * | 2009-05-06 | 2011-12-07 | 中国科学院微电子研究所 | Multifunctional ion beam sputtering equipment |
| CN101908461A (en) * | 2010-07-08 | 2010-12-08 | 中国电子科技集团公司第十二研究所 | Ion beam surface treatment equipment and method for suppressing secondary electron emission |
| TWI695080B (en) * | 2015-05-14 | 2020-06-01 | 美商瓦里安半導體設備公司 | Processing apparatus for multilayer deposition |
| CN106939409A (en) * | 2017-03-28 | 2017-07-11 | 中山市博顿光电科技有限公司 | A kind of device and method of multi-ion source sputtering production film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1017354B (en) | 1992-07-08 |
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