CN104252879A - Read-out circuit of resistive random access memory - Google Patents
Read-out circuit of resistive random access memory Download PDFInfo
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- CN104252879A CN104252879A CN201410502616.9A CN201410502616A CN104252879A CN 104252879 A CN104252879 A CN 104252879A CN 201410502616 A CN201410502616 A CN 201410502616A CN 104252879 A CN104252879 A CN 104252879A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 70
- 230000003321 amplification Effects 0.000 claims abstract description 14
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 14
- 230000015654 memory Effects 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 claims description 6
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- 238000000034 method Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
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Abstract
The invention belongs to the technical field of memories, and discloses a read-out circuit of a resistive random access memory, which comprises: the pre-charging circuit is used for pre-charging a bit line of the resistive random access memory; the first current mirror circuit is used for carrying out mirror image amplification output on the current of the storage unit on the bit line and realizing conversion from current to voltage; an output amplifying circuit for amplifying and outputting the voltage output by the first current mirror circuit; the buffer is connected to the output end of the output amplifying circuit through the phase inverter to stabilize an output signal; the output branch of the first current mirror circuit comprises a plurality of MOS (metal oxide semiconductor) tubes which are connected in parallel and controllable outside the chip, and the MOS tubes are used for adjusting the amplification factor of the current. The invention simplifies the circuit structure and reduces the power consumption and the area of the whole circuit; the sensitive amplifier which can be programmed by off-chip control can be used for reading data in the memory cell according to various materials and processes by adjusting the amplification factor of the current on the variable resistor according to specific conditions aiming at different processes and resistance change materials.
Description
Technical field
The present invention relates to memory technology field, particularly a kind of resistance-variable storing device sensing circuit.
Background technology
Resistance-variable storing device RRAM has the advantages such as high speed, high density, low-power consumption, high erasable number of times and high reliability, becomes the focus of non-volatile type memory technology of future generation research.
Sense amplifier, as mimic channel crucial in storer, plays conclusive effect to the performance of sensing circuit, and then determines the overall performance of whole storer.RRAM storer is due to its distinctive design feature, for single-ended reading out structure, so just require as sense amplifier electric current provides a stable reference current, but, existing reference current circuit is also unstable by the impact of the factor such as technique, temperature, has had a strong impact on the accuracy and reliability of reading.The external reference circuit simultaneously introduced extensively cannot adapt to resistive materials and process condition complicated and changeable, therefore, adaptability and read or write speed lower.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of sensing circuit improving resistance-variable storing device reading accuracy and reliability; Be applicable to the different Standard resistance ranges that different storage medium is formed simultaneously.
For solving the problems of the technologies described above, the invention provides a kind of resistance-variable storing device sensing circuit, comprising:
Pre-charge circuit, for carrying out precharge to the bit line of resistance-variable storing device;
First current mirroring circuit, amplifies the memory cell current mirror image on bit line and exports, and realize by the conversion of electric current to voltage;
Output amplifier, the voltage amplification exported by the first current mirroring circuit exports;
Impact damper, is connected to the output terminal of described output amplifier, stable output signal;
Wherein, described first current mirroring circuit exports the metal-oxide-semiconductor that branch road comprises multiple parallel connection and size adjustable, for regulating the enlargement factor of electric current.
Further, described pre-charge circuit comprises: phase inverter and the first metal-oxide-semiconductor;
The output terminal of described phase inverter is connected with the grid of described first metal-oxide-semiconductor, and the input end of described phase inverter is connected with the output terminal of described first metal-oxide-semiconductor;
The output terminal of described first metal-oxide-semiconductor is connected with the bit line of described storage unit, and the input end of described first metal-oxide-semiconductor is connected with the input branch road of described first current mirroring circuit.
Further, described first current mirroring circuit comprises:
Input branch road, is connected with described storage unit bit line by described pre-charge circuit, obtains bit line current;
Export branch road, the current mirror of described input branch road is amplified and exports;
Wherein, the output terminal of multiple paralleling MOS pipes of described output branch road all arranges gauge tap, for controlling the break-make of connected metal-oxide-semiconductor.
Further, the size of the metal-oxide-semiconductor of described multiple parallel connection is all not identical.
Further, described output branch road is by a resistive load metal-oxide-semiconductor ground connection;
Wherein, described output branch road is connected with the input end of described resistive load metal-oxide-semiconductor, and the grid of described resistive load metal-oxide-semiconductor connects external control signal SENSE_ON, the source ground connection of described resistive load metal-oxide-semiconductor.
Further, described output amplifier comprises: amplify metal-oxide-semiconductor, switch MOS pipe and the second current mirroring circuit;
The grid of described amplification metal-oxide-semiconductor is connected with the input end of described resistive load metal-oxide-semiconductor, and the input end of described amplification metal-oxide-semiconductor is connected with the output branch road of described second current mirroring circuit, the source ground connection of described amplification metal-oxide-semiconductor;
The input branch road of described second current mirroring circuit connects bias current, and the output branch road output terminal of described second current mirroring circuit connects impact damper, to subordinate's circuit output voltage signal;
The grid of described switch MOS pipe connects external control signal SENSE_OFF, and input end connects the input end of described impact damper, the source ground connection of described switch MOS pipe.
Further, the output termination phase inverter inv1 of described impact damper buffer; The output terminal of described phase inverter inv1 exports comparative result Vout.
Resistance-variable storing device sensing circuit provided by the invention controls the multiple of electric current on Signal Regulation mirror image memory cell path outward by sheet, expand the sensing range of sensing circuit, the resistance range that the resistive element adapting to different storage medium is formed, strengthen the sensitivity of sensing circuit, improve the dirigibility of circuit.Simultaneously the electric current of storage unit directly can be detected output, by with the transistor threshold of circuit own compare output logic level, without the need to using extra reference current source, save power consumption and the area of integrated circuit; Substantially increase reliability simultaneously.
Accompanying drawing explanation
The resistance-variable storing device reading circuit structure schematic diagram that Fig. 1 provides for the embodiment of the present invention.
Embodiment
See Fig. 1, a kind of resistance-variable storing device sensing circuit that the embodiment of the present invention provides, comprising:
Pre-charge circuit, for carrying out precharge to the bit line of resistance-variable storing device;
First current mirroring circuit, amplifies the memory cell current mirror image on bit line and exports, and realize by the conversion of electric current to voltage;
Output amplifier, the voltage amplification exported by the first current mirroring circuit exports;
Impact damper, is connected to the output terminal of described output amplifier, stable output signal;
Wherein, the first current mirroring circuit exports the metal-oxide-semiconductor that branch road comprises multiple parallel connection and size adjustable, for regulating the enlargement factor of electric current.
In the present embodiment, the first current mirroring circuit comprises:
Input branch road, is connected with storage unit bit line by pre-charge circuit, obtains bit line current;
Export branch road, the current mirror of input branch road is amplified and exports;
Wherein, the output terminal exporting multiple paralleling MOS pipes of branch road all arranges gauge tap, for controlling the break-make of connected metal-oxide-semiconductor.
Specifically comprise: metal-oxide-semiconductor P1, metal-oxide-semiconductor P2, metal-oxide-semiconductor P3, metal-oxide-semiconductor P4 and metal-oxide-semiconductor P5; Wherein, metal-oxide-semiconductor P1 is connected with pre-charge circuit as input branch road, obtains bit line current; Metal-oxide-semiconductor P2, metal-oxide-semiconductor P3, metal-oxide-semiconductor P4 and metal-oxide-semiconductor P5 parallel connection forms output branch road, bit line current Icell mirror image is amplified n and doubly exports; Wherein enlargement factor n is relevant with the size of parallel-connection structure, arrange voluntarily according to actual needs, arrange gauge tap En1 ~ En4 at each the metal-oxide-semiconductor output terminal exporting branch road, the metal-oxide-semiconductor access be attached thereto is exported branch road by selectivity according to actual needs simultaneously, thus adjustment enlargement factor.
In order to expand the span of enlargement factor, promote sensing circuit sensing range and sensitivity, metal-oxide-semiconductor P2, metal-oxide-semiconductor P3, metal-oxide-semiconductor P4 and metal-oxide-semiconductor P5 are all not identical, expand the selectivity of dimension combination, and then expand the selectivity of enlargement factor n, and then strengthen the reliability and sensitivity that read.
Export branch road by a resistive load metal-oxide-semiconductor N2 ground connection, export branch road to be connected with the drain terminal of resistive load metal-oxide-semiconductor N2, the grid of resistive load metal-oxide-semiconductor P2 connects external control signal SENSE_ON, the source ground connection of resistive load metal-oxide-semiconductor, realize the conversion of electric current to voltage, thus the image current nIcell that the first current mirroring circuit exports is converted to voltage signal V1, amplify metal-oxide-semiconductor N3 for controlling.
In the present embodiment, pre-charge circuit, for realizing the precharge of pairs of bit line, promotes reading speed; Meanwhile, in view of sensing circuit itself belongs to amplifier circuit configuration, in order to limit the circulation decline of storage unit, pre-charge voltage is stabilized in below supply voltage.
The pre-charge circuit that the present embodiment provides specifically comprises: phase inverter inv0 and the first metal-oxide-semiconductor P1; Phase inverter inv0 controls bit line by the first metal-oxide-semiconductor N1, and pairs of bit line carries out precharge.Meanwhile, P1 and N1 separates by phase inverter, thus makes the electromotive force on bit line only depend on pre-charge circuit, avoids the interference of external circuit, ensures to read accuracy.
Output amplifier comprises: amplify metal-oxide-semiconductor N3, switch MOS pipe N4 and the second current mirroring circuit.
The input branch road P7 of the second current mirroring circuit connects bias current Ibias, and the output branch road P6 output terminal of the second current mirroring circuit connects impact damper Buffer, to subordinate circuit output voltage signal V2;
Amplify the source ground connection of metal-oxide-semiconductor, the grid amplifying metal-oxide-semiconductor N3 is connected with the input end of resistive load metal-oxide-semiconductor N2, thus controls the turn-on and turn-off of amplifying metal-oxide-semiconductor by resistive load N2; The input end amplifying metal-oxide-semiconductor N3 is connected with the output branch road of the second current mirroring circuit, thus under the cooperation of amplifying the mIbias bias current that m doubly exports through the second current mirroring circuit mirror image, realize the output amplification that bit line amplifies voltage V1, the state of reading cells;
The grid of switch MOS pipe N4 connects external control signal SENSE_OFF, and input end connects the input end of impact damper, and the source ground connection of switch MOS pipe N4, realizes the control of sensing circuit by external control signal.
In embodiments of the present invention, RRAM storer is in Set operating process, and resistive element becomes low-resistance from high resistant, and the electric current flowing through storage unit during read operation is comparatively large, and sensing circuit reads " 1 "; In Reset operating process, resistive element becomes low high resistant from low-resistance, and the electric current flowing through storage unit during read operation is less, and sensing circuit reads " 0 ".The threshold point of whole circuit can obtain by regulating the size of transistor, namely by the programming Control of the En1 ~ En4 in ordered pair first circuit mirror current during external control, realizes the regulable control of threshold value.
Particularly, when sense amplifier works, external control signal SENSE_ON is configured to high level, and SENSE_OFF is configured to low level; Now electric current flows through N1 and P1, and starts pairs of bit line and charge.If the state of storage unit is low-resistance, bit line current Icell is larger, P2 must drive a size to be the big current of nIcell, the input end electromotive force of P2 is very high, the change of voltage V1 is output level and amplifies, voltage V2 decreases, and exports as " 1 " through impact damper buffer and phase inverter inv1, output end vo ut.If the state of storage unit is high resistant, bit line current Icell is less, and the drive current of P2 is smaller, the input end electromotive force of resistive load P2 is lower, thus voltage V1 reduces, and voltage V2 increases, export as " 0 " through impact damper buffer and phase inverter inv1, output end vo ut.
In the present embodiment, metal-oxide-semiconductor P1 ~ P7 is P type metal-oxide-semiconductor; Metal-oxide-semiconductor N1 ~ N4 is N-type metal-oxide-semiconductor.Must explain, cast can do multiple combination according to actual needs, not considered critical the present embodiment circuit structure.
The present invention does not need additionally to produce reference current, exported by the threshold value control realization logic of transistor in sensing circuit, substitute in existing method and adopt reference power source to realize the mode of logic reading, circuit structure is simple, reduce the power consumption of integrated circuit, reduce area.In addition, the resistance distribution range of different resistive material is different, the present invention is directed to this phenomenon and adopts the outer Programmable Technology of sheet, make current amplification factor adjustable, under different memory cell currents, all can realize comparing function.Meanwhile, in the present invention, add pre-charge circuit, there is reading speed faster.It should be noted last that, above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although with reference to example to invention has been detailed description, those of ordinary skill in the art is to be understood that, can modify to technical scheme of the present invention or equivalent replacement, and not departing from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (7)
1. a resistance-variable storing device sensing circuit, is characterized in that, comprising:
Pre-charge circuit, for carrying out precharge to the bit line of resistance-variable storing device;
First current mirroring circuit, amplifies the memory cell current mirror image on bit line and exports, and realize by the conversion of electric current to voltage;
Output amplifier, the voltage amplification exported by the first current mirroring circuit exports;
Impact damper, through phase inverter, is connected to the output terminal of described output amplifier, stable output signal;
Wherein, described first current mirroring circuit exports the metal-oxide-semiconductor that branch road comprises multiple parallel connection and size adjustable, for regulating the enlargement factor of electric current.
2. resistance-variable storing device sensing circuit as claimed in claim 1, it is characterized in that, described pre-charge circuit comprises: phase inverter and the first metal-oxide-semiconductor;
The output terminal of described phase inverter is connected with the grid of described first metal-oxide-semiconductor, and the input end of described phase inverter is connected with the output terminal of described first metal-oxide-semiconductor;
The output terminal of described first metal-oxide-semiconductor is connected with the bit line of described storage unit, and the input end of described first metal-oxide-semiconductor is connected with the input branch road of described first current mirroring circuit.
3. resistance-variable storing device sensing circuit as claimed in claim 1, it is characterized in that, described first current mirroring circuit comprises:
Input branch road, is connected with described storage unit bit line by described pre-charge circuit, obtains bit line current;
Export branch road, the current mirror of described input branch road is amplified and exports;
Wherein, the output terminal of multiple paralleling MOS pipes of described output branch road all arranges gauge tap, for controlling the break-make of connected metal-oxide-semiconductor.
4. resistance-variable storing device sensing circuit as claimed in claim 3, is characterized in that: the size of the metal-oxide-semiconductor of described multiple parallel connection all can not be identical.
5. resistance-variable storing device sensing circuit as claimed in claim 3, is characterized in that: described output branch road is by a resistive load metal-oxide-semiconductor ground connection;
Wherein, described output branch road is connected with the input end of described resistive load metal-oxide-semiconductor, and the grid of described resistive load metal-oxide-semiconductor connects external control signal SENSE_ON, the source ground connection of described resistive load metal-oxide-semiconductor.
6. resistance-variable storing device sensing circuit as claimed in claim 5, it is characterized in that, described output amplifier comprises: amplify metal-oxide-semiconductor, switch MOS pipe and the second current mirroring circuit;
The grid of described amplification metal-oxide-semiconductor is connected with the input end of described resistive load metal-oxide-semiconductor, and the input end of described amplification metal-oxide-semiconductor is connected with the output branch road of described second current mirroring circuit, the source ground connection of described amplification metal-oxide-semiconductor;
The input branch road of described second current mirroring circuit connects bias current, and the output branch road output terminal of described second current mirroring circuit connects impact damper, to subordinate's circuit output voltage signal;
The grid of described switch MOS pipe connects external control signal SENSE_OFF, and input end connects the input end of described impact damper, and the drain terminal of described switch MOS pipe connects impact damper, source ground connection.
7. resistance-variable storing device sensing circuit as claimed in claim 1, is characterized in that: the output termination phase inverter inv1 of described impact damper buffer; The output terminal of described phase inverter inv1 exports comparative result Vout.
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| CN201410502616.9A CN104252879A (en) | 2014-09-26 | 2014-09-26 | Read-out circuit of resistive random access memory |
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| CN201410502616.9A CN104252879A (en) | 2014-09-26 | 2014-09-26 | Read-out circuit of resistive random access memory |
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Cited By (8)
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| CN104953988A (en) * | 2015-06-19 | 2015-09-30 | 西安华芯半导体有限公司 | High-precision anti-interference comparator, method and memory structure using high-precision anti-interference comparator |
| CN105424096A (en) * | 2016-01-04 | 2016-03-23 | 东南大学 | Readout circuit of resistive composite sensor array, and readout method thereof |
| CN109215698A (en) * | 2017-06-29 | 2019-01-15 | 爱思开海力士有限公司 | Buffer circuits and device including the buffer circuits |
| CN110100219A (en) * | 2017-11-28 | 2019-08-06 | 深圳市汇顶科技股份有限公司 | Voltage-stablizer and power supply |
| CN111210859A (en) * | 2020-01-03 | 2020-05-29 | 首都师范大学 | Method for relieving sneak path influence in memristor cross array and related equipment |
| CN111540396A (en) * | 2020-04-27 | 2020-08-14 | 中国科学院微电子研究所 | MRAM reading device and method for overcoming process floating of memory cell |
| CN112349338A (en) * | 2020-11-24 | 2021-02-09 | 普冉半导体(上海)股份有限公司 | Memory cell characteristic analysis circuit |
| WO2022104704A1 (en) * | 2020-11-20 | 2022-05-27 | 华为技术有限公司 | Memory data reading circuit and memory |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104953988A (en) * | 2015-06-19 | 2015-09-30 | 西安华芯半导体有限公司 | High-precision anti-interference comparator, method and memory structure using high-precision anti-interference comparator |
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| CN109215698A (en) * | 2017-06-29 | 2019-01-15 | 爱思开海力士有限公司 | Buffer circuits and device including the buffer circuits |
| CN109215698B (en) * | 2017-06-29 | 2022-07-12 | 爱思开海力士有限公司 | Buffer circuit and device including the same |
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| CN111210859A (en) * | 2020-01-03 | 2020-05-29 | 首都师范大学 | Method for relieving sneak path influence in memristor cross array and related equipment |
| CN111210859B (en) * | 2020-01-03 | 2022-03-22 | 首都师范大学 | Method for relieving sneak path influence in memristor cross array and related equipment |
| CN111540396A (en) * | 2020-04-27 | 2020-08-14 | 中国科学院微电子研究所 | MRAM reading device and method for overcoming process floating of memory cell |
| CN111540396B (en) * | 2020-04-27 | 2022-04-01 | 中国科学院微电子研究所 | MRAM reading device and method for overcoming process floating of memory cell |
| WO2022104704A1 (en) * | 2020-11-20 | 2022-05-27 | 华为技术有限公司 | Memory data reading circuit and memory |
| CN112349338A (en) * | 2020-11-24 | 2021-02-09 | 普冉半导体(上海)股份有限公司 | Memory cell characteristic analysis circuit |
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Application publication date: 20141231 |