CN104242254B - A kind of high-power IGBT temperature sampling protection circuit - Google Patents
A kind of high-power IGBT temperature sampling protection circuit Download PDFInfo
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- 238000002955 isolation Methods 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 13
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Abstract
A kind of high-power IGBT temperature sampling protection circuit of the present invention, the circuit includes：Temperature sampling amplifying circuit：For collecting temperature signal；Temperature sampling a reference source：For providing reference voltage to temperature sampling amplifying circuit；Difference isolating amplifier circuit：The signal that temperature sampling amplifying circuit is gathered is isolated and amplified；Voltage follower circuit：The use signal that difference isolating amplifier circuit is exported passes to AD sampling modules；Temperature protection latch cicuit：The sampled signal that voltage follower circuit is exported, which is compared, to be protected and is latched；Temperature protection a reference source：Benchmark protection voltage is provided temperature protection latch cicuit.A kind of high-power IGBT temperature sampling protection circuit of the present invention, precision height and good reliability.
Description
Technical field
The present invention relates to a kind of protection circuit, electricity is protected more particularly, to a kind of temperature sampling on high-power IGBT
Road, belongs to electric and electronic technical field.
Background technology
High-power IGBT module is widely used in electric and electronic technical field, is a kind of component costly；
IGBT modules can influence its performance because of temperature change, when IGBT junction temperature overrates, it may occur that permanent damages, institute
To need to set temperature protective device to IGBT modules, so that IGBT modules work within the temperature range of permission；
In actual use, high-power IGBT is high frequency, high-current switch device, can be produced compared with strong electromagnetic spoke during its work
Penetrate, conventional IGBT temperature collection protection circuit is easily caused sampling precision deviation or even damage by electromagnetic interference；Cause
This IGBT temperature collection protection circuit needs the circuit design suppressed using a kind of strong common mode disturbances of band.
Meanwhile, high-power IGBT is a kind of heater element, due to its high-power heat-dissipation, surrounding environment temperature during its normal work
Degree is changed greatly, and conventional IGBT temperature sample circuit works in this big temperature range environment, lacks corresponding temperature drift suppression
Ability processed, so as to cause its precision inadequate, it is therefore desirable to which a kind of new IGBT temperature collection protection circuit, it has certain
Temperature drift rejection ability, can avoid influence of the temperature change to sampling precision.
The content of the invention
It is an object of the invention to overcome above-mentioned deficiency, there is provided a kind of precision height and the high-power IGBT temperature of good reliability
Sampling protection circuit.
The object of the present invention is achieved like this：A kind of high-power IGBT temperature sampling protection circuit, the circuit is included
Have：
Temperature sampling amplifying circuit：For collecting temperature signal；
Temperature sampling a reference source：For providing reference voltage to temperature sampling amplifying circuit；
Difference isolating amplifier circuit：The signal that temperature sampling amplifying circuit is gathered is isolated and amplified；
Voltage follower circuit：The sampled signal that difference isolating amplifier circuit is exported passes to AD sampling modules；
Temperature protection latch cicuit：The sampled signal that voltage follower circuit is exported, which is compared, protects and is locked
Deposit；
Temperature protection a reference source：Benchmark protection voltage is provided temperature protection latch cicuit.
A kind of high-power IGBT temperature sampling protection circuit of the present invention, the temperature sampling a reference source and temperature protection benchmark
Source is mu balanced circuit, and the bleeder circuit of the mu balanced circuit is concatenated by first resistor, adjustable resistance, second resistance and 3rd resistor
Between high level VCC and simulation ground, the tie point between the reference pole access second resistance and 3rd resistor of a voltage-stabiliser tube, surely
The anode access simulation ground of pressure pipe, the negative electrode of voltage-stabiliser tube accesses high level VCC through first resistor, and high level VCC is through the first electricity
By decoupling capacitor access simulation ground after resistance, the negative electrode of voltage-stabiliser tube exports voltage-stabiliser tube in burning voltage, temperature sampling a reference source
The negative electrode output reference protection voltage of voltage-stabiliser tube in negative electrode output reference voltage, temperature protection a reference source.
A kind of high-power IGBT temperature sampling protection circuit of the present invention, the model TL431 of the voltage-stabiliser tube.
A kind of high-power IGBT temperature sampling protection circuit of the present invention, the temperature sampling amplifying circuit includes partial pressure electricity
Road, the bleeder circuit is serially connected between reference voltage and simulation ground by resistance four, thermistor and resistance five, the thermistor
Tie point output temperature signal between resistance five；Output temperature sampled signal after the temperature signal amplifies through amplifier.
A kind of high-power IGBT temperature sampling protection circuit of the present invention, the company between thermistor and resistance five described above
The temperature signal of contact output accesses the in-phase input end of amplifier one through resistance, and the inverting input of amplifier one is exported with it
End is connected, and the output end of the amplifier accesses the in-phase input end of amplifier two, the in-phase input end of the amplifier two through resistance
Through resistance access simulation ground, the inverting input of the amplifier two simulates ground through resistance access, while the amplifier two
Inverting input accesses its output end through another resistance, and the output end of the amplifier two is through a resistance output temperature sampled signal.
A kind of high-power IGBT temperature sampling protection circuit of the present invention, described one end of resistance four is connected with reference voltage, separately
One end is connected through common mode filtering capacity earth, described one end of resistance five with simulation ground, and the other end is through common mode filtering capacity earth.
A kind of high-power IGBT temperature sampling protection circuit of the present invention, the difference isolating amplifier circuit include photoelectricity every
From amplifier, the temperature sampling signal of said temperature amplifier circuit output accesses the homophase input of optical isolation amplifier
End, the inverting input access simulation ground of optical isolation amplifier, the difference output both positive and negative polarity point of the optical isolation amplifier
The in-phase input end of amplifier three and inverting input are not connected to after resistance, the in-phase input end of above-mentioned amplifier three is through parallel connection
Access simulation ground after the electric capacity and resistance of setting, the inverting input of above-mentioned amplifier three is after the electric capacity and resistance that are arranged in parallel
Access the output end of amplifier three；The output end output temperature sampled signal of the amplifier three inputs AD after voltage follower
Sampling module.
A kind of high-power IGBT temperature sampling protection circuit of the present invention, the model HCPL- of above-mentioned optical isolation amplifier
7800, the model MC34071 of above-mentioned amplifier three.
A kind of high-power IGBT temperature sampling protection circuit of the present invention, the temperature protection latch cicuit includes comparator
And trigger, the in-phase input end of said temperature sampled signal input comparator, the benchmark protection voltage of temperature protection a reference source
The inverting input of input comparator, the output end of the comparator is provided with a pull-up resistor, and the output end be connected to it is tactile
Send out the control end of device.
A kind of high-power IGBT temperature sampling protection circuit of the present invention, the amplifier one, amplifier two and amplifier four
Model LM358, the model LM211 of comparator, the model CD4013 of trigger.
Compared with prior art, the beneficial effects of the invention are as follows：
The present invention a kind of the temperature sampling a reference source and temperature protection a reference source of high-power IGBT temperature sampling protection circuit
Using digital and Adjustable, it can guarantee that reference voltage value and benchmark protect the accurate of magnitude of voltage, so as to improve sampling protection precision；This
The temperature sampling of invention can correct the reference voltage and temperature of temperature sampling a reference source by adjusting adjustable resistance resistance size
Protect the benchmark protection voltage of a reference source；Because voltage-stabiliser tube TL431 obtains stabilizing voltage characteristic, when sampling power supply is slightly fluctuated or partial pressure electricity
Resistance resistance can guarantee that the output of reference voltage and benchmark protection voltage is stable when being influenceed by temperature drift.
A kind of high-power IGBT temperature sampling protection circuit of the present invention uses multistage amplifier circuit, has circuit relatively strong anti-
Interference performance, while ensure sampled signal precision, it is applicable in high electromagnetic noise environment.Optical isolation amplifier HCPL-
7800 have larger common-mode rejection ratio, itself and the input filtering electric capacity in rear class differential amplifier circuit, temperature sampling amplifying circuit
Combination can filter out sampled signal common mode disturbances.In addition, the voltage follow in temperature sampling amplifying circuit and voltage follower circuit
Device is designed in sampled signal input and output end, it is ensured that sampled signal integrality, improves sampling precision.
A kind of high-power IGBT temperature sampling protection circuit temperature protection band latch of the present invention, occurs overheat protector failure
Fault-signal can be made maintained until controlled reset.It can avoid after temperature protection, because basic failure is not excluded, temperature drop to protection
Secondary misoperation caused by value is following.
Brief description of the drawings
Fig. 1 is a kind of circuit block diagram of high-power IGBT temperature sampling protection circuit of the invention.
Fig. 2 is a kind of partial circuit of the temperature sampling a reference source of high-power IGBT temperature sampling protection circuit of the invention
Figure.
Fig. 3 is a kind of partial circuit of the temperature sampling amplifying circuit of high-power IGBT temperature sampling protection circuit of the invention
Figure.
Fig. 4 is a kind of partial circuit of the difference isolating amplifier circuit of high-power IGBT temperature sampling protection circuit of the invention
Figure.
Fig. 5 is a kind of partial circuit diagram of the voltage follower of high-power IGBT temperature sampling protection circuit of the invention.
Fig. 6 is a kind of partial circuit of the temperature protection a reference source of high-power IGBT temperature sampling protection circuit of the invention
Figure.
Fig. 7 is a kind of partial circuit of the temperature protection latch cicuit of high-power IGBT temperature sampling protection circuit of the invention
Figure.
Embodiment
Referring to Fig. 1, a kind of high-power IGBT temperature sampling protection circuit of the present invention, the circuit includes：
Temperature sampling amplifying circuit：For collecting temperature signal；
Temperature sampling a reference source：For providing reference voltage to temperature sampling amplifying circuit；
Difference isolating amplifier circuit：The signal that temperature sampling amplifying circuit is gathered is isolated and amplified；
Voltage follower circuit：The sampled signal that difference isolating amplifier circuit is exported passes to AD sampling modules；
Temperature protection latch cicuit：The sampled signal that voltage follower circuit is exported, which is compared, protects and is locked
Deposit；
Temperature protection a reference source：For providing temperature protection latch cicuit benchmark protection voltage；
With reference to Fig. 2 ~ 7 pair, the present invention is specifically addressed：
Referring to Fig. 2 and Fig. 6, the temperature sampling a reference source and temperature protection a reference source are mu balanced circuit, voltage stabilizing electricity
Road uses TL431 voltage-stabiliser tubes, and the mu balanced circuit is with the common difference using the TL431 mu balanced circuits constituted：With reference to pole
Adjustable resistance is used on bleeder circuit, so that the mu balanced circuit can be adjusted as needed；Concretely --- point
Volt circuit is by first resistor（The R1 in R35, Fig. 6 in Fig. 2）, adjustable resistance（The R2 in RR1, Fig. 6 in Fig. 2）, second electricity
Resistance（The R3 in R36, Fig. 6 in Fig. 2）And 3rd resistor（The R4 in R37, Fig. 6 in Fig. 2）It is serially connected with high level VCC and simulation
Between ground, and voltage-stabiliser tube TL431（The U3 in U4, Fig. 6 in Fig. 2）Reference pole access second resistance and 3rd resistor between
Tie point, voltage-stabiliser tube TL431 anode access simulation ground, voltage-stabiliser tube TL431 negative electrode accesses high level VCC through first resistor,
And high level VCC passes through decoupling capacitor after first resistor（The C1 in CC1, Fig. 6 in Fig. 2）Access simulation ground, voltage-stabiliser tube
TL431 negative electrode（Namely U4 the first pin）Output reference voltage Vref, voltage-stabiliser tube TL431 negative electrode（Namely U3 the first pin）
Output reference protects voltage；Above-mentioned voltage-stabiliser tube U3, U4 model are TL431, it is illustrated that middle voltage-stabiliser tube U4 is encapsulated using SOP-8,
It has 8 pins；8 pin definition are followed successively by：1st pin is negative electrode（Cathode）, the 2nd ~ 5 pin be empty pin, the 6th pin is sun
Pole（Anode）, the 7th pin be that sky pin, the 8th pin are to refer to pole（Reference）；
Said temperature sampled reference source circuit adjusts reference voltage at Vref by adjusting adjustable resistance RR1 resistances size
Reach accurate desired value；When supply voltage VCC has fluctuation or divider resistance BR1, when BR41 has temperature drift, TL431 pairs of voltage-stabiliser tube
Temperature sampling reference voltage output end formation negative-feedback at Vref, it is ensured that temperature sampling reference voltage is stable, no fluctuation.
Referring to Fig. 3, the temperature sampling amplifying circuit includes bleeder circuit, and the bleeder circuit is by resistance four（In Fig. 3
BR1）, thermistor（RT in Fig. 3）With resistance five（BR41 in Fig. 3）It is serially connected between reference voltage and simulation ground（It is preferred that, institute
State the one end of resistance four with reference voltage to be connected, the other end is grounded through common mode filtering electric capacity BC1, described one end of resistance five and simulation ground
It is connected, the other end is grounded through common mode filtering electric capacity BC3）, the tie point output temperature letter between the thermistor and resistance five
Number；The temperature signal is exported after amplifying through amplifier；Concretely, the temperature signal accesses amplifier one through resistance（In Fig. 3
LEM1A）In-phase input end, the inverting input of amplifier one is connected with its output end, and the output end of the amplifier is through resistance
Access amplifier two（LEM1B in Fig. 3）In-phase input end, the in-phase input end of the amplifier two accesses through a resistance and simulates
Ground, the inverting input of the amplifier two is through resistance access simulation ground, while the inverting input of the amplifier two is through another
Resistance accesses its output end, and the output end of the amplifier two is through a resistance output temperature sampled signal；Above-mentioned amplifier one and put
The model of big device two is LM358；
Above-mentioned thermistor RT is thermo-sensitive resistor inside IGBT, and its resistance can obtain correspondence temperature by looking into resistance/thermometer
Degree；BR1, RT, BR41 are to temperature sampling reference voltage partial pressure；Operational amplifier LEM1A connections formation voltage follower；Partial pressure electricity
Voltage is transferred to BR6 through transmitting resistance BR5 and voltage follower LEM1A on resistance BR41, and its output impedance is approximately zero；BC1,
BC3 is high pressure ceramic disc capacitor, and thermo-sensitive resistor RT two ends common mode disturbances can be suppressed by being connected with the earth；BR6, BR2, BR11, BR10 and
Operational amplifier LEM1B composition amplifying circuits；
Referring to Fig. 4, the difference isolating amplifier circuit includes optical isolation amplifier U3, said temperature amplifier electricity
The temperature sampling signal access optical isolation amplifier U3 of road output in-phase input end, optical isolation amplifier U3's is anti-phase defeated
With entering to terminate into simulation, the difference output both positive and negative polarity of the optical isolation amplifier U3 is connected to amplifier three after resistance respectively
（OP1 in Fig. 4）In-phase input end and inverting input, electric capacity through being arranged in parallel of the in-phase input end of above-mentioned amplifier three and
Access simulation ground after resistance, the inverting input of above-mentioned amplifier three accesses amplifier three after the electric capacity and resistance that are arranged in parallel
Output end；The output end output temperature sampled signal of the amplifier three inputs AD after voltage follower as shown in Figure 5
Sampling module；Above-mentioned optical isolation amplifier U3 model HCPL-7800, the model MC34071 of above-mentioned amplifier three；
Referring to Fig. 5, the voltage follower includes amplifier four（LEM3A in Fig. 5）, above-mentioned difference isolation amplification electricity
The in-phase input end of the temperature sampling signal input amplifier four of road output, the inverting input of the amplifier four connects through resistance
Enter its output end, the output end is input a signal into AD sampling modules；The model LM358 of amplifier four；
Referring to Fig. 7, the temperature protection latch cicuit includes comparator U1 and trigger U2, said temperature sampled signal
Input comparator U1 in-phase input end, the benchmark protection control source comparator U1 of temperature protection a reference source anti-phase input
End, the output end of the comparator U1 is provided with a pull-up resistor, and the output end is connected to trigger U2 control end CP1；
The model LM211 of the comparator U1, trigger U2 model CD4013；
The benchmark protection voltage of temperature protection a reference source is compared by comparator U1 with temperature sampling signal, when temperature is adopted
When sample signal level protects voltage higher than benchmark（When i.e. temperature is higher than design temperature）, believe to rear class d type flip flop U2 output protections
Number；U2 is binary channels d type flip flop CD4013；Its DI pin is that signal input part is connected to 5V high level, as pulse input end CP1
When pin level is uprised, Q1 pins output high level latch up protection signal, R1 is d type flip flop reset pin, temperature protection signal
It can be resetted by host computer；
Accurate in real time to the progress of high-power IGBT internal temperature it can be sampled using after the present invention；And the present invention have compared with
Strong anti-common mode disturbances ability, will not cause sampling error because of the strong electromagnetic interference environment around IGBT operating rooms；Originally simultaneously
Invention has temperature drift sampling error rejection ability, can suppress the sampling error caused by temperature drift during operating ambient temperature change；
And the present invention temperature protection signal band latch function, will not because of temperature drop after protection automatic resetting.
In addition：It should be noted that above-mentioned embodiment is only an optimization scheme of this patent, this area
Any change or improvement that technical staff is done according to above-mentioned design, within the protection domain of this patent.
Claims (6)
1. a kind of high-power IGBT temperature sampling protection circuit, it is characterised in that：The circuit includes：
Temperature sampling amplifying circuit：For collecting temperature signal；
Temperature sampling a reference source：For providing reference voltage to temperature sampling amplifying circuit；
Difference isolating amplifier circuit：The signal that temperature sampling amplifying circuit is gathered is isolated and amplified；
Voltage follower circuit：The sampled signal that difference isolating amplifier circuit is exported passes to AD sampling modules；
Temperature protection latch cicuit：The sampled signal that voltage follower circuit is exported, which is compared, to be protected and is latched；
Temperature protection a reference source：Benchmark protection voltage is provided temperature protection latch cicuit；
The temperature sampling a reference source and temperature protection a reference source are mu balanced circuit, and the bleeder circuit of the mu balanced circuit is by first
Resistance, adjustable resistance, second resistance and 3rd resistor are serially connected between high level VCC and simulation ground, the reference pole of a voltage-stabiliser tube
The tie point accessed between second resistance and 3rd resistor, the anode access simulation ground of voltage-stabiliser tube, the negative electrode of voltage-stabiliser tube is through first
Resistance accesses high level VCC, and high level VCC passes through decoupling capacitor access simulation ground, the negative electrode of voltage-stabiliser tube after first resistor
Export voltage-stabiliser tube in the negative electrode output reference voltage of voltage-stabiliser tube in burning voltage, temperature sampling a reference source, temperature protection a reference source
Negative electrode output reference protection voltage；
The temperature sampling amplifying circuit includes bleeder circuit, and the bleeder circuit is gone here and there by resistance four, thermistor and resistance five
It is connected between reference voltage and simulation ground, the tie point output temperature signal between the thermistor and resistance five；The temperature
Output temperature sampled signal after signal amplifies through amplifier；
Described one end of resistance four is connected with reference voltage, and the other end is through common mode filtering capacity earth, described one end of resistance five and mould
Intend ground to be connected, the other end is through common mode filtering capacity earth；The difference isolating amplifier circuit includes optical isolation amplifier, on
The temperature sampling signal for stating the output of temperature sampling amplifying circuit accesses the in-phase input end of optical isolation amplifier, and Phototube Coupling is put
The inverting input access simulation ground of big device, the difference output both positive and negative polarity of the optical isolation amplifier is connected after resistance respectively
To the in-phase input end of amplifier three and inverting input, electric capacity and electricity of the in-phase input end through being arranged in parallel of above-mentioned amplifier three
Access simulation ground after resistance, the inverting input of above-mentioned amplifier three accesses amplifier three after the electric capacity and resistance that are arranged in parallel
Output end；The output end output temperature sampled signal of the amplifier three inputs AD sampling modules after voltage follower.
2. a kind of high-power IGBT temperature sampling protection circuit as claimed in claim 1, it is characterised in that：The type of the voltage-stabiliser tube
Number be TL431.
3. a kind of high-power IGBT temperature sampling protection circuit as claimed in claim 1, it is characterised in that：Temperature-sensitive electricity described above
The temperature signal of tie point output between resistance and resistance five accesses the in-phase input end of amplifier one through resistance, amplifier one
Inverting input is connected with its output end, and the output end of the amplifier accesses the in-phase input end of amplifier two through resistance, and this is put
The in-phase input end of big device two is through resistance access simulation ground, and the inverting input of the amplifier two is accessed through a resistance simulates
Ground, while the inverting input of the amplifier two accesses its output end through another resistance, the output end of the amplifier two is through an electricity
Hinder output temperature sampled signal.
4. a kind of high-power IGBT temperature sampling protection circuit as claimed in claim 1, it is characterised in that：Above-mentioned Phototube Coupling is put
The model HCPL-7800, the model MC34071 of above-mentioned amplifier three of big device.
5. a kind of high-power IGBT temperature sampling protection circuit as claimed in claim 1, it is characterised in that：The temperature protection lock
Deposit circuit and include comparator and trigger, the in-phase input end of said temperature sampled signal input comparator, temperature protection base
The benchmark in quasi- source protects the inverting input of control source comparator, and the output end of the comparator is provided with a pull-up resistor,
And the output end is connected to the control end of trigger.
6. a kind of high-power IGBT temperature sampling protection circuit as claimed in claim 5, it is characterised in that：The amplifier one,
The model LM358 of amplifier two and amplifier four, the model LM211 of comparator, the model CD4013 of trigger.
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| CN201410436048.7A CN104242254B (en) | 2014-09-01 | 2014-09-01 | A kind of high-power IGBT temperature sampling protection circuit |
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| CN201410436048.7A CN104242254B (en) | 2014-09-01 | 2014-09-01 | A kind of high-power IGBT temperature sampling protection circuit |
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| CN104242254B true CN104242254B (en) | 2017-11-03 |
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| CN105444915A (en) * | 2015-11-13 | 2016-03-30 | 苏州扬佛自动化设备有限公司 | High-voltage switchgear monitoring control circuit |
| CN105628246A (en) * | 2015-12-20 | 2016-06-01 | 常州瑞华电力电子器件有限公司 | Power semiconductor module temperature monitoring system |
| CN106768460A (en) * | 2016-12-02 | 2017-05-31 | 杭州创睿新能源科技有限公司 | A kind of charging pile pipette tips temperature collection circuit and method |
| CN108254089A (en) * | 2018-03-22 | 2018-07-06 | 深圳市英威腾电动汽车驱动技术有限公司 | A kind of temperature sampling circuit and controller |
| CN113091929B (en) * | 2019-12-23 | 2023-04-07 | 比亚迪股份有限公司 | Motor temperature sampling circuit and fault detection method thereof |
| CN111416329A (en) * | 2020-03-31 | 2020-07-14 | 上海空间电源研究所 | Shunt switch tube overheat protection circuit for aerospace power supply |
| CN112600164A (en) * | 2020-12-21 | 2021-04-02 | 芜湖大洋电驱动有限公司 | Temperature acquisition and over-temperature protection circuit for driving motor of electric automobile and motor |
| CN113049108A (en) * | 2021-03-03 | 2021-06-29 | 河南新正方彩印有限公司 | Environment-friendly UV printing treatment control system |
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Inventor after: Zhang Jianxing Inventor after: Huang Jie Inventor before: Zhang Jianxing Inventor before: Hu Qiuli Inventor before: Huang Jie |
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Denomination of invention: A high-power IGBT temperature sampling protection circuit Granted publication date: 20171103 Pledgee: Bank of Communications Ltd. Wuxi branch Pledgor: JIANGSU FANGCHENG ELECTRIC SCIENCE AND TECHNOLOGY Co.,Ltd. Registration number: Y2024980035361 |