CN104241432A - Three-junction solar cell with optimized band gap structure - Google Patents
Three-junction solar cell with optimized band gap structure Download PDFInfo
- Publication number
- CN104241432A CN104241432A CN201410479800.6A CN201410479800A CN104241432A CN 104241432 A CN104241432 A CN 104241432A CN 201410479800 A CN201410479800 A CN 201410479800A CN 104241432 A CN104241432 A CN 104241432A
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- battery
- junction
- layer
- cell
- solar cell
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- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 12
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 6
- 238000005457 optimization Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910002059 quaternary alloy Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000026267 regulation of growth Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a three-junction solar cell with an optimized band gap structure, which comprises three-junction solar cell units, wherein the upper surface and the lower surface of each three-junction solar cell unit are respectively provided with an antireflection film and a first metal electrode, and the upper surface of the antireflection film is provided with a second metal electrode; the three-junction solar cell unit takes a semiconductor Ge single crystal wafer as a substrate, and sequentially comprises a bottom cell, a middle cell and a top cell from bottom to top according to a layered structure, wherein the bottom cell is a Ge solar cell, the middle cell is a GaInNAs solar cell, the top cell is a GaInP solar cell, the bottom cell and the middle cell are connected through a first tunnel junction, and the middle cell and the top cell are connected through a second tunnel junction. The invention can optimize the band gap combination of the three-junction battery, improve the integral short-circuit current of the three-junction battery and finally improve the photoelectric conversion efficiency of the three-junction battery.
Description
Technical field
The present invention relates to the technical field of photovoltaic, refer in particular to the three-junction solar battery that a kind of bandgap structure is optimized.
Background technology
Traditional GaAs multijunction solar cell is owing to can make full use of more solar spectrum scope, and photoelectric conversion efficiency exceeds much than conventional crystalline silicon battery.At present, GaInP/GaInAs/Ge three-junction solar battery technology of preparing is very ripe, and is applied to concentrating photovoltaic power generation (CPV) system maturely.But, bandgap structure 1.85eV/1.40eV/0.66eV based on GaInP/GaInAs/Ge tri-junction battery of Lattice Matching is not best, having more that in the solar spectrum energy ratio that under this structure, battery at the bottom of Ge absorbs, battery and top battery absorb is a lot, therefore (V.Sabnis more than the maximum nearly twice reaching middle battery and top battery of the short circuit current of Ge battery, H.Yuen, and M.Wiemer, AIP Conf.Proc.1477 (2012) 14), due to the current limit reason of cascaded structure, causing a big chunk spectral energy can not by abundant conversion, limit the raising of battery performance.
Calculating shows, the best band gap combination of three-junction solar battery under AM1.5D spectrum is 1.83eV/1.16eV/0.69eV, this band gap combination limit inferior optically focused conversion efficiency can reach 66.6% (A.Marti and A.Luque, Solar Energy Materials and Solar Cells, 43 (1996) 203).Therefore, a kind of band gap is about 1.16eV, lattice constant is mated with Ge substrate semi-conducting material can be selected to replace Ga
0.99in
0.01battery material in As.Prove through theoretical research and experiment, in GaAs material, mix a small amount of In and N simultaneously form Ga
1-xin
xn
yas
1-yquaternary alloy material, as x:y=2.8,0<y<0.06, Ga
1-xin
xn
yas
1-ymaterial lattice constant mates substantially with Ge (or GaAs), and band gap changes between 0.8eV-1.4eV, and as 0.01<y<0.02, its band gap is between 1.15eV--1.18eV.Therefore, to Ga traditional at present
0.5in
0.5p/Ga
0.99in
0.01as/Ge tri-junction battery carries out band gap optimization, band gap is adopted to be battery in the GaInNAs battery replacement GaInAs of 1.15eV--1.18eV, and growth regulation condition obtains the GaInP item battery that material band gap is 1.80eV--1.83eV, then can form GaInP/GaInNAs/Ge tri-junction battery that band gap is combined as 1.80--1.83eV/1.15-1.18eV/0.66eV, the closely best band gap combination of three junction batteries under AM1.5D spectrum, can significantly improve the short circuit current of three-junction solar battery and overall opto-electronic conversion performance.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art and shortcoming, the three-junction solar battery that a kind of bandgap structure is optimized is provided, the band gap combination of three junction batteries can be optimized, improve the overall short circuit current of three junction batteries, and the final photoelectric conversion efficiency improving three junction batteries.
For achieving the above object, technical scheme provided by the present invention is: the three-junction solar battery that a kind of bandgap structure is optimized, include three-junction solar battery unit, the upper and lower surface of described three-junction solar battery unit is respectively arranged with anti-reflection film and the first metal electrode, and the upper surface of described anti-reflection film is provided with the second metal electrode; Wherein, described three-junction solar battery unit with semiconductor Ge single-chip for substrate, end battery, middle battery, top battery is included from bottom to up successively according to layer structure, battery of the described end is Ge solar cell, middle battery is GaInNAs solar cell, top battery is GaInP solar cell, and battery of the described end is connected by the first tunnel junction with between middle battery, is connected between described middle battery with top battery by the second tunnel junction.
Battery structure of the described end includes p-type Ge substrate, GaInP nucleating layer, GaInAs resilient coating from bottom to up successively.
Described middle battery structure includes p-type AlGaAs back surface field layer, p-type Ga from bottom to up successively
1-xin
xn
yas
1-ylayer, N-shaped Ga
1-xin
xn
yas
1-ylayer or N-shaped Ga
0.99in
0.01as layer, N-shaped AlGaAs Window layer; Wherein x:y=2.8:1,0.01<y<0.02.
Described top battery structure includes p-type AlGaInP back surface field layer, p-type Ga from bottom to up successively
0.5in
0.5p layer, N-shaped Ga
0.5in
0.5p layer, N-shaped AlInP Window layer, wherein Ga
0.5in
0.5the atomic arrangement of P material presents part order, and its material band gap is 1.80eV-1.83eV.
Compared with prior art, tool has the following advantages and beneficial effect in the present invention:
Utilize the own characteristic of GaInNAs quaternary alloy material, replace traditional Ga with GaInNAs battery
0.5in
0.5p/Ga
0.99in
0.01battery in GaInAs in As/Ge tri-junction battery, obtain GaInP/GaInNAs/Ge tri-junction battery that band gap is combined as 1.83eV/1.16eV/0.66eV, in integral material structure, not only meet the requirement of Lattice Matching, and optimize the bandgap structure of three junction batteries, successfully can improve short circuit current and the photoelectric conversion efficiency of three junction batteries.
Accompanying drawing explanation
Fig. 1 is the structural representation of three-junction solar battery unit of the present invention.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
The three-junction solar battery that bandgap structure described in the present embodiment is optimized, include three-junction solar battery unit, the upper and lower surface of described three-junction solar battery unit is respectively arranged with anti-reflection film and the first metal electrode, and the upper surface of described anti-reflection film is provided with the second metal electrode.Wherein, described first metal electrode, the second metal electrode, anti-reflection film are all adopt the method such as photoetching, evaporation to be prepared from, and after completing the preparation of metal electrode and anti-reflection film, solar cell epitaxial wafer is scratched according to required size, single solar cell chip can be obtained.
As shown in Figure 1, three-junction solar battery unit described in the present embodiment is with 4 inches of p-type Ge single-chips for substrate, and adopting metal organic chemical vapor deposition technology (MOCVD) or molecular beam epitaxial growth technology to grow successively from bottom to up according to layer structure has end battery 1, first tunnel junction 2, middle battery 3, second tunnel junction 4, top battery 5.Wherein, battery structure of the described end includes p-type Ge substrate, GaInP nucleating layer, GaInAs resilient coating from bottom to up successively.Described middle battery structure includes p-type AlGaAs back surface field layer, p-type Ga from bottom to up successively
1-xin
xn
yas
1-ylayer, N-shaped Ga
1-xin
xn
yas
1-ylayer or N-shaped Ga
0.99in
0.01as layer, N-shaped AlGaAs Window layer; Wherein x:y=2.8:1,0.01<y<0.02.Described top battery structure includes p-type AlGaInP back surface field layer, p-type Ga from bottom to up successively
0.5in
0.5p layer, N-shaped Ga
0.5in
0.5p layer, N-shaped AlInP Window layer, wherein Ga
0.5in
0.5the atomic arrangement of P material presents part order, and its material band gap is 1.80eV-1.83eV.
The examples of implementation of the above are only the preferred embodiment of the present invention, not limit practical range of the present invention with this, therefore the change that all shapes according to the present invention, principle are done, all should be encompassed in protection scope of the present invention.
Claims (4)
1. the three-junction solar battery of a bandgap structure optimization, it is characterized in that: include three-junction solar battery unit, the upper and lower surface of described three-junction solar battery unit is respectively arranged with anti-reflection film and the first metal electrode, and the upper surface of described anti-reflection film is provided with the second metal electrode; Wherein, described three-junction solar battery unit with semiconductor Ge single-chip for substrate, end battery, middle battery, top battery is included from bottom to up successively according to layer structure, battery of the described end is Ge solar cell, middle battery is GaInNAs solar cell, top battery is GaInP solar cell, and battery of the described end is connected by the first tunnel junction with between middle battery, is connected between described middle battery with top battery by the second tunnel junction.
2. the three-junction solar battery of a kind of bandgap structure optimization according to claim 1, is characterized in that: battery structure of the described end includes p-type Ge substrate, GaInP nucleating layer, GaInAs resilient coating from bottom to up successively.
3. the three-junction solar battery of a kind of bandgap structure optimization according to claim 1, is characterized in that: described middle battery structure includes p-type AlGaAs back surface field layer, p-type Ga from bottom to up successively
1-xin
xn
yas
1-ylayer, N-shaped Ga
1-xin
xn
yas
1-ylayer or N-shaped Ga
0.99in
0.01as layer, N-shaped AlGaAs Window layer; Wherein x:y=2.8:1,0.01<y<0.02.
4. the three-junction solar battery of a kind of bandgap structure optimization according to claim 1, is characterized in that: described top battery structure includes p-type AlGaInP back surface field layer, p-type Ga from bottom to up successively
0.5in
0.5p layer, N-shaped Ga
0.5in
0.5p layer, N-shaped AlInP Window layer, wherein Ga
0.5in
0.5the atomic arrangement of P material presents part order, and its material band gap is 1.80eV-1.83eV.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410479800.6A CN104241432A (en) | 2014-09-18 | 2014-09-18 | Three-junction solar cell with optimized band gap structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410479800.6A CN104241432A (en) | 2014-09-18 | 2014-09-18 | Three-junction solar cell with optimized band gap structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104241432A true CN104241432A (en) | 2014-12-24 |
Family
ID=52229175
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410479800.6A Pending CN104241432A (en) | 2014-09-18 | 2014-09-18 | Three-junction solar cell with optimized band gap structure |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2650785C1 (en) * | 2017-01-30 | 2018-04-17 | Публичное акционерное общество "Сатурн" (ПАО "Сатурн") | Method of manufacturing a photopulator with nanostructural advanced coating |
| CN110911510A (en) * | 2019-11-20 | 2020-03-24 | 电子科技大学中山学院 | Silicon-based nitride five-junction solar cell containing superlattice structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11214726A (en) * | 1998-01-23 | 1999-08-06 | Sumitomo Electric Ind Ltd | Stacked solar cell |
| CN204118094U (en) * | 2014-09-18 | 2015-01-21 | 瑞德兴阳新能源技术有限公司 | Three-junction solar cell with optimized band gap structure |
-
2014
- 2014-09-18 CN CN201410479800.6A patent/CN104241432A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11214726A (en) * | 1998-01-23 | 1999-08-06 | Sumitomo Electric Ind Ltd | Stacked solar cell |
| CN204118094U (en) * | 2014-09-18 | 2015-01-21 | 瑞德兴阳新能源技术有限公司 | Three-junction solar cell with optimized band gap structure |
Non-Patent Citations (1)
| Title |
|---|
| 晏磊、于丽娟: "Ⅲ-Ⅴ族材料制备多结太阳电池的研究进展", 《微纳电子技术》, vol. 47, no. 6, 30 June 2010 (2010-06-30) * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2650785C1 (en) * | 2017-01-30 | 2018-04-17 | Публичное акционерное общество "Сатурн" (ПАО "Сатурн") | Method of manufacturing a photopulator with nanostructural advanced coating |
| CN110911510A (en) * | 2019-11-20 | 2020-03-24 | 电子科技大学中山学院 | Silicon-based nitride five-junction solar cell containing superlattice structure |
| CN110911510B (en) * | 2019-11-20 | 2021-02-26 | 电子科技大学中山学院 | Silicon-based nitride five-junction solar cell containing superlattice structure |
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Application publication date: 20141224 |