CN104241311A - CMOS (complementary metal oxide semiconductor) image sensor capable of being used in multiple working modes - Google Patents
CMOS (complementary metal oxide semiconductor) image sensor capable of being used in multiple working modes Download PDFInfo
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Abstract
The invention provides a CMOS (complementary metal oxide semiconductor) image sensor capable of being used in multiple working modes and aims to solve the problem that an CMOS image sensor in the prior art cannot take both multispectral output and high quantum efficiency into consideration. The CMOS image sensor is structured on the basis of 4T pixel of surface clamping and comprises three transmission grids, a photoelectric diode, a floating node, a resetting tube resetting grid, a source tracker and a selectron, the photoelectric diode adopts a three-N-buried-layer vertical stacked structure, each N buried layer senses illumination of different wavebands and is correspondingly connected with one transmission grid, three N buried layers share the floating node, and the CMOS image sensor can be in different working modes by differently sequencing the transmission grids, the resetting tube resetting grid and the selectron. The CMOS image sensor has the advantages that multispectral selection output of a single pixel can be realized, and high-quantum-efficiency output of pixels can be realized.
Description
Invention field
The present invention relates to cmos image sensor designing technique, particularly relate to a kind of cmos image sensor that can be used for multiple-working mode.
Background technology
Cmos image sensor is with its low cost, high integration, and more and more higher image quality obtains the development of advancing by leaps and bounds, and is widely used in the fields such as machine vision, safety monitoring, portable use, medical treatment, military affairs.Prior art cmos image sensor is mainly active picture element image sensor APS, comprises 3T, 4T, 5T pixel.Cmos image sensor due to 3T pixel, 5T pixel also exists and can not carry out the shortcomings such as correlated-double-sampling, and therefore, the cmos image sensor of 4T pixel becomes main product.
The quantum efficiency of pixel refer to photodiode collection to photogenerated charge and the photon injecting pixel between ratio, quantum efficiency is higher, the photon of identical incidence can produce more photo-generate electron-hole pair, the light induced electron arrived by photodiode collection is more, thus increase the full trap capacity of pixel simultaneously, expand pixel dynamic range.Under subdued light conditions, the pixel of high-quantum efficiency can provide higher response, catches more details.
On the other hand, prior art cmos image sensor is when sense colors visible ray, and the filter mainly with red, green, blue three kinds of colors filters light, makes the light of the pixel induction different colours under different filter, forms coloured image afterwards through image procossing.But as everyone knows, the coloured image that mating plate obtains after filtration also has shortcoming, comprises and comes from the interpolation algorithm that interpolation obtains other colors, be essentially a kind of low pass filter, must cause the loss of image high frequency detail, reduces image quality.In addition, for the image-region that certain rule repeats, be then easy to occur low frequency color fringe, i.e. so-called colored Morie fringe.And for the wave band such as black light, visible ray, near infrared light that silicon can be responded to, prior art cmos image sensor carries out all respectively, also there is no the imageing sensor that simultaneously can detect several different-waveband light.
The X3 transducer of Foveon company, adopt CMOS technology, utilize the PN junction of multilayer vertical stacking, different depth to detect color, the light due to different wave length is penetrated into the different depth in substrate, directly no longer can need filter at a pixel internal induction color.Be typical vertical stacking dot structure as shown in Figure 1, it is based on 3T pixel, adopt stacked structure, the photogenerated charge of three kinds of different colours light is responded to the PN junction of three layers of different depth, source follower, reset transistor and the line EAC different by corresponding three groups of three floor photosensitive layer carry out three tunnel outputs, i.e. blue, green, red output, thus realize otherwise visible light color output.Patent CN 101421847 B, then mainly improve vertical stack, such as N-type non-uniform doping photodiode, vertical trench transistor etc., can the performance of more effective raising stacked pixel by these technology.In patent CN 102623475 A, similar to X3 technology, based on 4T pixel, transmission grid, floating node and source follower are all configured with to every layer of photosensitive layer in stacked structure, namely contain three transmission grid, three floating nodes and three source followers.But above-mentioned cmos image sensor can process the imaging of coloured image preferably, the imaging under the special applications condition such as half-light or time delay integration TDI but can not be processed preferably.Obviously, prior art cmos image sensor also exists can not take into account the problems such as multispectral output and large quantum efficiency simultaneously.
Summary of the invention
What exist for solution prior art cmos image sensor can not take into account the problems such as multispectral output and large quantum efficiency simultaneously, and the present invention proposes a kind of cmos image sensor that can be used for multiple-working mode.The cmos image sensor that the present invention can be used for multiple-working mode builds based on the 4T pixel that surface is clamped, comprises three transmission grid, a photodiode, a floating node, a reset transistor resetting gate, a source follower and a selection pipe; Described photodiode adopts three layers of N buried regions vertical stack, and the illumination of every layer of N buried regions induction different-waveband is also corresponding connects transmission grid, and three layers of N buried regions share a floating node; A limit in floating node connects reset transistor resetting gate and is connected to the source follower of reset transistor side by metal lead wire and selects pipe, and, by three transmission grid and reset transistor resetting gate with select the different sequential of pipe to make transducer be in different mode of operations, make the photogenerated charge in three layers of N buried regions by the transmission grid of its correspondence respectively or combination shift and read.
Further, the cmos image sensor photodiode that the present invention can be used for multiple-working mode adopts three layers of N buried regions vertical stack, comprise, every layer of stacked structure is that the P+ doped layer of N buried regions on it and surrounding is formed, the P+ doped layer on surface is clamped layer, together with the P-sub structure of the bottom, the final composite three-layer vertical stack forming P+NP+/NP+/NPsub; Described N buried regions and P+ doped layer adopt repeatedly N-type/P+ type injection mode to produce, and three floor N buried region are in different injection degree of depth district, make three layers of N buried regions can respond to the illumination of different-waveband, produce the photogenerated charge of corresponding wave band.
Further, the cmos image sensor that the present invention can be used for multiple-working mode increases P+ type implanted layer at the interface of every layer of N buried regions and its transmission grid, form the potential barrier to the photogenerated charge in other N buried regions, make the photogenerated charge in every layer of N buried regions can only be transferred to floating node by the control of the transmission grid corresponding with it.
Further, the cmos image sensor that the present invention can be used for multiple-working mode arranges anti-break-through implanted layer between three layers of N buried regions and floating node, to prevent three layers of N buried regions to the electric leakage between floating node.
Further, the cmos image sensor that the present invention can be used for multiple-working mode adopts repeatedly injection to form non-uniform doping N buried structure at charge transfer path, to improve the potential gradient of charge transfer path, increases charge transfer effciency.
Further, the cmos image sensor that the present invention can be used for multiple-working mode makes pixel operation in different mode of operations by the different sequential that three transmit grid and reset transistor and selection pipe, make the photogenerated charge in three layers of N buried regions by the transmission grid of its correspondence respectively or combination transfer photogenerated charge reading, comprise
Multispectral pattern, the photogenerated charge namely in three layers of N buried regions is shifted photogenerated charge by the transmission grid of its correspondence and is read successively respectively, and concrete steps are:
S101, add high pressure floating node reset to reset transistor;
S102, to first transmission grid adjunction high pressure, the photogenerated charge in the N buried regions connected corresponding to it is imported in floating node;
S103, by source follower with select pipe the photogenerated charge in floating node is read;
S104, to add high pressure by transmitting grid to reset transistor and first, by floating node therewith layer N buried regions reset;
S105, second transmission grid to be added high pressure, repeat step S102 to S104;
S106, the 3rd transmission grid to be added high pressure, repeat step S102 to S104;
S107, complete the multispectral model application of a two field picture;
In addition, under multispectral pattern, by selecting the order that adds high pressure of each transmission grid, realize two field picture different N buried regions photogenerated charge, i.e. a preferential readout mode for different-waveband; Or omit step S105 and/or S106, realize a two field picture one deck or two-layer N buried regions photogenerated charge, i.e. the selection readout mode of one or two wave band;
High-quantum efficiency pattern, read in the lump after the photogenerated charge superposition namely in three layers of N buried regions, concrete steps comprise:
S201, add high pressure floating node reset to reset transistor;
S202, successively three transmission grid to be added high pressure, three transmission grid correspondence photogenerated charges connected in N buried regions are imported in floating nodes;
The photogenerated charge of S203, three transfers forms superposition in floating node;
S204, by source follower with select pipe read;
S205, to reset transistor and three transmission grid add high pressure, three layers of N buried regions and floating node are resetted;
S206, complete the pixel high-quantum efficiency model application of a two field picture;
In addition, under high-quantum efficiency pattern, by selecting the transmission grid order added high pressure in step S202, realize different N buried regions photogenerated charge built-up sequence, i.e. the readout mode of different-waveband built-up sequence; Or by selecting the transmission grid quantity added high pressure in step S202, realize any two layers of N buried regions photogenerated charge of a two field picture, i.e. the readout mode of any two wave bands.
The Advantageous Effects that the present invention can be used for the cmos image sensor of multiple-working mode is that the multispectral selection that can realize single pixel exports, and the high-quantum efficiency that also can realize pixel exports, thus makes pixel be adapted to different mode of operations.
Accompanying drawing explanation
Accompanying drawing 1 is the schematic diagram of prior art cmos image sensor vertical stacking dot structure;
Accompanying drawing 2 is schematic top plan view that the present invention can be used for the cmos image sensor three level stack structure-pixel of multiple-working mode;
Accompanying drawing 3 is the cross-sectional schematic along b-a tangent line in accompanying drawing 2;
Accompanying drawing 4 is the cross-sectional schematic along b-c tangent line in accompanying drawing 2;
Accompanying drawing 5 is the present invention's multispectral model application work schedule schematic diagrames;
Accompanying drawing 6 is high-quantum efficiency model application work schedule schematic diagrames of the present invention;
Accompanying drawing 7 is high-quantum efficiency mode potential energy change curve schematic diagrames of the present invention.
Below in conjunction with drawings and the specific embodiments, the cmos image sensor that can be used for multiple-working mode is further described.
Embodiment
Accompanying drawing 1 is the schematic diagram of prior art cmos image sensor vertical stacking dot structure, as seen from the figure, prior art vertical stacking dot structure, based on 3T pixel, adopt stacked structure, respond to the photogenerated charge of three kinds of different colours light with the PN junction of three layers of different depth, source follower, reset transistor and the line EAC different by corresponding three groups of three floor photosensitive layer carry out three tunnel outputs, i.e. blue, green, red output, thus realize otherwise visible light color output.
Accompanying drawing 2 is schematic top plan view that the present invention can be used for the cmos image sensor three level stack structure-pixel of multiple-working mode, accompanying drawing 3 is the cross-sectional schematic along b-a tangent line in accompanying drawing 2, accompanying drawing 4 is the cross-sectional schematic along b-c tangent line in accompanying drawing 2, in figure, 1, 2, 3 is transmission grid, 4 is photodiode, 5 is floating node, 6 is reset transistor resetting gate, 7 is source follower, 8 for selecting pipe, 9, 10, 11 is the P+ doped layer around N buried regions, 12, 13, 14 is N buried regions, 15 is anti-break-through implanted layer, 16 is the P+ type implanted layer that the interface of N buried regions and its transmission grid increases.As seen from the figure, the cmos image sensor that the present invention can be used for multiple-working mode builds based on the 4T pixel that surface is clamped, comprise three transmission grid (1,2,3), a photodiode 4, floating node 5, reset transistor resetting gate 6, source follower 7 and a selection pipe 8; Described photodiode 4 adopts the vertical stack of three layers of N buried regions (12,13,14), every layer of N buried regions (12,13,14) the illumination also corresponding connection one transmission grid (1,2,3) of different-waveband is responded to, and three layers of N buried regions (12,13,14) share a floating node 5; A limit in floating node 5 connects reset transistor resetting gate 6 and is connected to the source follower 7 of reset transistor side by metal lead wire and selects pipe 8, and, by three transmission grid (1,2,3) and reset transistor resetting gate 6 and select the different sequential of pipe 8 to make transducer be in different mode of operations, three layers of N buried regions (12 are made, 13,14) photogenerated charge in by the transmission grid (1,2,3) of its correspondence respectively or combination shift and read.
Photodiode of the present invention adopts three layers of N buried regions (1,2,3) vertical stack, comprise, every layer of stacked structure is the N buried regions (12,13 on it, 14) form with the P+ doped layer (9,10,11) of surrounding, the P+ doped layer on surface is clamped layer, together with the P-sub structure of the bottom, and the final composite three-layer vertical stack forming P+NP+/NP+/NPsub; Described N buried regions and P+ doped layer adopt repeatedly N-type/P+ type injection mode to produce, and three floor N buried region are in different injection degree of depth district, make three layers of N buried regions can respond to the illumination of different-waveband, produce the photogenerated charge of corresponding wave band.The depletion region formed between three layers of N buried region and territory, p type island region is around used for collecting photogenerated charge.Because three layers of N buried region are in the different injection degree of depth, therefore, it is possible to the light signal of induction different wave length.
Floating node is entered by not corresponding transmission grid for preventing photogenerated charge wherein, the present invention increases P+ type implanted layer at the interface of every layer of N buried regions and its transmission grid, form the potential barrier to the photogenerated charge in other N buried regions, make the photogenerated charge in every layer of N buried regions can only be transferred to floating node by the control of the transmission grid corresponding with it.Depletion region between effective isolation different N type region, prevents the crosstalk of photogenerated charge between different-waveband.
For preventing three layers of N buried regions to the electric leakage between floating node, the present invention arranges anti-break-through implanted layer between three layers of N buried regions and floating node, to prevent three layers of N buried regions to the electric leakage between floating node.
For improving charge transfer effciency, the cmos image sensor that the present invention can be used for multiple-working mode adopts repeatedly injection to form non-uniform doping N buried structure at charge transfer path, to improve the potential gradient of charge transfer path, increases charge transfer effciency.
The cmos image sensor that the present invention can be used for multiple-working mode makes pixel operation in different mode of operations by the different sequential that three transmit grid and reset transistor and selection pipe, make the photogenerated charge in three layers of N buried regions by the transmission grid of its correspondence respectively or combination transfer photogenerated charge reading, wherein, modal is multispectral pattern and high-quantum efficiency pattern.
Multispectral, comprise the blue light of visible ray, green glow, ruddiness; And the wave band that the silicon such as near ultraviolet, visible ray, near-infrared can be responded to.The incident degree of depth of light of different-waveband is different, therefore, needs the stepped construction of different depth.In like manner, the N buried regions of the different injection degree of depth can respond to the light signal of different wave length, produces corresponding photogenerated charge.Accompanying drawing 5 is the present invention's multispectral model application work schedule schematic diagrames, 5 is known by reference to the accompanying drawings, when the cmos image sensor that the present invention can be used for multiple-working mode is in multispectral work pattern, namely the photogenerated charge in three layers of N buried regions is shifted photogenerated charge by the transmission grid of its correspondence and is read successively respectively, and concrete steps are:
S101, add high pressure floating node reset to reset transistor; In diagram, reset transistor 6 adds high pressure reset floating node 5;
S102, to first transmission grid adjunction high pressure, the photogenerated charge in the N buried regions connected corresponding to it is imported in floating node; Transmit grid 1 in diagram and connect high pressure, the photogenerated charge in N buried regions 12 is imported in floating node 5;
S103, by source follower with select pipe the photogenerated charge in floating node is read;
S104, to add high pressure by transmitting grid to reset transistor and first, by floating node therewith layer N buried regions reset; In diagram, reset transistor 6 adds high pressure with transmission grid 1, and floating node 5 and N buried regions 12 are reset;
S105, second transmission grid to be added high pressure, repeat step S101 to S104; Grid 2 are transmitted and N buried regions 13 repeats step S101 to S104 in diagram;
S106, the 3rd transmission grid to be added high pressure, repeat step S101 to S104; Grid 3 are transmitted and N buried regions 14 repeats step S101 to S104 in diagram;
S107, complete the multispectral model application of a two field picture.
Obviously, the cmos image sensor that the present invention can be used for multiple-working mode can be adjusted according to concrete practical application condition by user completely, can realize the preferential reading of different-waveband.Further, be not limited to the reading of photogenerated charge in three layers of N buried regions, can select equally and only read the reading of the photogenerated charge in two-layer arbitrarily or one deck N buried regions wherein, the reading order between its number of plies and each layer is adjusted by sequential by user.User also can according to physical condition, and select every frame to read one deck wherein or two-layer photogenerated charge, next frame reads the photogenerated charge in other different layers, by back-end circuit process, completes specific imaging.Generally speaking, under multispectral pattern, by selecting the order that adds high pressure of each transmission grid, realize two field picture different N buried regions photogenerated charge, i.e. a preferential readout mode for different-waveband; Or omit step S105 and/or S106, realize a two field picture one deck or two-layer N buried regions photogenerated charge, i.e. the selection readout mode of one or two wave band.
Quantum efficiency be photodiode collection to photogenerated charge and the photon injecting pixel between ratio, photogenerated charge is collected by the depletion region of photodiode, and therefore, wider depletion region scope can more effective collection photogenerated charge.Existing dot structure is generally individual layer N buried regions, because illumination all comprises different wave bands usually, such as visible ray can be analyzed to blue light, green glow, ruddiness, do not share the same light for three kinds and there is different wavelength, the induction degree of depth in silicon is different, individual layer N buried regions will lose the photon of the wavelength that its depletion region does not reach, and quantum efficiency is low.And the N buried regions of stacked structure can respond the photon of different-waveband, photon utilization ratio uprises, and quantum efficiency is high, and dynamic range is large.Accompanying drawing 6 is high-quantum efficiency model application work schedule schematic diagrames of the present invention, and accompanying drawing 7 is high-quantum efficiency mode potential energy change curve schematic diagrames of the present invention.By reference to the accompanying drawings 6,7 known, the present invention can be used for the cmos image sensor of multiple-working mode can with high-quantum efficiency work pattern, and read in the lump after the photogenerated charge superposition namely in three layers of N buried regions, concrete steps comprise:
S201, add high pressure floating node reset to reset transistor;
S202, successively three transmission grid to be added high pressure, three transmission grid correspondence photogenerated charges connected in N buried regions are imported in floating nodes; Transmit grid 1,2,3 in diagram to open successively respectively, the photogenerated charge in corresponding N buried regions 12,13,14 is transferred in floating node 5 successively;
The photogenerated charge of S203, three transfers forms superposition in floating node 5;
S204, by source follower with select pipe read;
S205, to reset transistor and three transmission grid add high pressure, three layers of N buried regions and floating node are resetted;
S206, complete the pixel high-quantum efficiency model application of a two field picture.
Obviously, under high-quantum efficiency model application, the order of photogenerated charge transfer in three stacking N buried regions 12,13,14 can be adjusted by transmission grid 1,2,3 by user, thus realizes different combinations.On the other hand, be not limited to the cumulative of photogenerated charge in three level stack N buried regions, can only add up and read wherein two-layer arbitrarily photogenerated charge, the number of plies and sequentially being adjusted by user.Also according to application conditions, can adjust the different cumulative number of plies of every frame and order, the optimization realized under different application condition reads.Generally speaking, user can by transmission grid 1,2,3 and reset transistor resetting gate 6, line EAC 8 sequential adjustment, realize the cumulative reading combination of different N buried regions photogenerated charge, realize different high-quantum efficiency combinations, to meet the application demand under different condition.That is, under high-quantum efficiency pattern, by selecting the transmission grid order added high pressure in step S202, different N buried regions photogenerated charge built-up sequence is realized, i.e. the readout mode of different-waveband built-up sequence; Or by selecting the transmission grid quantity added high pressure in step S202, realize any two layers of N buried regions photogenerated charge of a two field picture, i.e. the readout mode of any two wave bands.
Obviously, the Advantageous Effects that the present invention can be used for the cmos image sensor of multiple-working mode is that the multispectral selection that can realize single pixel exports, and the high-quantum efficiency that also can realize pixel exports, thus makes pixel be adapted to different mode of operations.
Although; the present invention discloses as above with preferred embodiment; but the present invention can be much different from alternate manner described here to implement; therefore the present invention is not by the restriction of above-mentioned disclosed specific embodiment; the various improvement that the design of any employing method of the present invention and technical scheme are carried out; or directly apply to other occasion, all within protection scope of the present invention without improving.
Claims (6)
1. one kind can be used for the cmos image sensor of multiple-working mode, it is characterized in that, this cmos image sensor builds based on the 4T pixel that surface is clamped, comprises three transmission grid, a photodiode, a floating node, a reset transistor resetting gate, a source follower and a selection pipe; Described photodiode adopts three layers of N buried regions vertical stack, and the illumination of every layer of N buried regions induction different-waveband is also corresponding connects transmission grid, and three layers of N buried regions share a floating node; A limit in floating node connects reset transistor resetting gate and is connected to the source follower of reset transistor side by metal lead wire and selects pipe, and, by three transmission grid and reset transistor resetting gate with select the different sequential of pipe to make transducer be in different mode of operations, make the photogenerated charge in three layers of N buried regions by the transmission grid of its correspondence respectively or combination shift and read.
2. can be used for the cmos image sensor of multiple-working mode according to claim 1, it is characterized in that, photodiode adopts three layers of N buried regions vertical stack, comprise, every layer of stacked structure is that the P+ doped layer of N buried regions on it and surrounding is formed, the P+ doped layer on surface is clamped layer, together with the P-sub structure of the bottom, and the final composite three-layer vertical stack forming P+NP+/NP+/NPsub; Described N buried regions and P+ doped layer adopt repeatedly N-type/P+ type injection mode to produce, and three floor N buried region are in different injection degree of depth district, make three layers of N buried regions can respond to the illumination of different-waveband, produce the photogenerated charge of corresponding wave band.
3. can be used for the cmos image sensor of multiple-working mode according to claim 1, it is characterized in that, P+ type implanted layer is increased at the interface of every layer of N buried regions and its transmission grid, form the potential barrier to the photogenerated charge in other N buried regions, make the photogenerated charge in every layer of N buried regions can only be transferred to floating node by the control of the transmission grid corresponding with it.
4. can be used for the cmos image sensor of multiple-working mode according to claim 1, it is characterized in that, anti-break-through implanted layer is set between three layers of N buried regions and floating node, to prevent three layers of N buried regions to the electric leakage between floating node.
5. can be used for the cmos image sensor of multiple-working mode according to claim 1, it is characterized in that, adopt repeatedly to inject at charge transfer path and form non-uniform doping N buried structure, to improve the potential gradient of charge transfer path, increase charge transfer effciency.
6. can be used for the cmos image sensor of multiple-working mode according to claim 1, it is characterized in that, different sequential by three transmission grid and reset transistor and selection pipe make pixel operation in different mode of operations, make the photogenerated charge in three layers of N buried regions by the transmission grid of its correspondence respectively or combination transfer photogenerated charge reading, comprise
Multispectral pattern, the photogenerated charge namely in three layers of N buried regions is shifted photogenerated charge by the transmission grid of its correspondence and is read successively respectively, and concrete steps are:
S101, add high pressure floating node reset to reset transistor;
S102, to first transmission grid adjunction high pressure, the photogenerated charge in the N buried regions connected corresponding to it is imported in floating node;
S103, by source follower with select pipe the photogenerated charge in floating node is read;
S104, to add high pressure by transmitting grid to reset transistor and first, by floating node therewith layer N buried regions reset;
S105, second transmission grid to be added high pressure, repeat step S102 to S104;
S106, the 3rd transmission grid to be added high pressure, repeat step S102 to S104;
S107, complete the multispectral model application of a two field picture;
In addition, under multispectral pattern, by selecting the order that adds high pressure of each transmission grid, realize two field picture different N buried regions photogenerated charge, i.e. a preferential readout mode for different-waveband; Or omit step S105 and/or S106, realize a two field picture one deck or two-layer N buried regions photogenerated charge, i.e. the selection readout mode of one or two wave band;
High-quantum efficiency pattern, read in the lump after the photogenerated charge superposition namely in three layers of N buried regions, concrete steps comprise:
S201, add high pressure floating node reset to reset transistor;
S202, successively three transmission grid to be added high pressure, three transmission grid correspondence photogenerated charges connected in N buried regions are imported in floating nodes;
The photogenerated charge of S203, three transfers forms superposition in floating node;
S204, by source follower with select pipe read;
S205, to reset transistor and three transmission grid add high pressure, three layers of N buried regions and floating node are resetted;
S206, complete the pixel high-quantum efficiency model application of a two field picture;
In addition, under high-quantum efficiency pattern, by selecting the transmission grid order added high pressure in step S202, realize different N buried regions photogenerated charge built-up sequence, i.e. the readout mode of different-waveband built-up sequence; Or by selecting the transmission grid quantity added high pressure in step S202, realize any two layers of N buried regions photogenerated charge of a two field picture, i.e. the readout mode of any two wave bands.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108760049A (en) * | 2018-05-11 | 2018-11-06 | 中国科学院西安光学精密机械研究所 | The ultraviolet imager of CMOS active pixel sensor is bombarded based on uv electron |
| CN110444550A (en) * | 2018-05-02 | 2019-11-12 | 爱思开海力士有限公司 | Imaging sensor including additional transmission gate and additional floating diffusion regions |
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| WO2005119785A1 (en) * | 2004-05-27 | 2005-12-15 | Foveon, Inc. | Vertical color filter sensor group and semiconductor integrated circuit fabrication method for fabricating same |
| KR20090051790A (en) * | 2007-11-20 | 2009-05-25 | (주)실리콘화일 | A unit pixel of the image sensor having photodiode of stacking structure |
| US8405751B2 (en) * | 2009-08-03 | 2013-03-26 | International Business Machines Corporation | Image sensor pixel structure employing a shared floating diffusion |
| US8866945B2 (en) * | 2010-09-26 | 2014-10-21 | Hiok Nam Tay | Color image sampling and reconstruction |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110444550A (en) * | 2018-05-02 | 2019-11-12 | 爱思开海力士有限公司 | Imaging sensor including additional transmission gate and additional floating diffusion regions |
| CN110444550B (en) * | 2018-05-02 | 2023-07-18 | 爱思开海力士有限公司 | Image sensor including additional transfer gate and additional floating diffusion region |
| CN108760049A (en) * | 2018-05-11 | 2018-11-06 | 中国科学院西安光学精密机械研究所 | The ultraviolet imager of CMOS active pixel sensor is bombarded based on uv electron |
| CN108760049B (en) * | 2018-05-11 | 2024-01-05 | 中国科学院西安光学精密机械研究所 | Ultraviolet imager based on ultraviolet electron bombardment active pixel sensor |
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