CN110536084A - Lamination cmos image sensor and image processing method - Google Patents
Lamination cmos image sensor and image processing method Download PDFInfo
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- CN110536084A CN110536084A CN201910855113.2A CN201910855113A CN110536084A CN 110536084 A CN110536084 A CN 110536084A CN 201910855113 A CN201910855113 A CN 201910855113A CN 110536084 A CN110536084 A CN 110536084A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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Abstract
The embodiment of the present application provides a kind of lamination cmos image sensor and image processing method, the lamination cmos image sensor includes: two kinds of lamination pixel units being arranged alternately, two kinds of lamination pixel units include the photodiode PD column of three kinds of sizes, wherein, each lamination pixel unit in two kinds of lamination pixel units is arranged two layers of PD column respectively, two layers of photodiode PD column includes the PD column of two kinds of sizes, and each layer of PD column dimension is identical in two layers of PD column, two kinds of lamination pixel units absorb RGB three coloured light using the PD column of three kinds of sizes respectively, and the corresponding optical signal of RGB three coloured light is converted into the corresponding electric signal of RGB three coloured light；The cmos pixel reading circuit connecting with the output end of two kinds of lamination pixel units, each layer of PD column are connect with a cmos pixel reading circuit, and cmos pixel reading circuit reads electric signal for amplifying electric signal.
Description
Technical field
This application involves field of image processing more particularly to a kind of lamination cmos image sensors
And image processing method.
Background technique
Complementary metal oxide semiconductor (CMOS, Complementary Metal-Oxide Semiconductor) figure
As sensor (cmos image sensor, CMOS Image Sensor) has integrated level height, power consumption
It small, the features such as speed is fast and at low cost, is widely used in terms of high-resolution pixel product.Usual cmos image sensor is same
It only can record one of tri- kinds of colors of RGB in one pixel, image color details is less, generates unnecessary line shape so that generating
Effect.In order to increase color detail, and unnecessary line shape effect is avoided, records RGB's respectively using three layers of photosensitive element
One of Color Channel, main working principle be, using the difference of absorption length of the light of different wave length in silicon come
The signal that different depth obtains is measured, the detection of tri- kinds of colors of R, G, B is finally realized in a pixel.
However, existing three layers of photosensitive element since the thickness of its every layer photosensitive element is larger, cause Pixel Dimensions greatly and
The big problem of cmos image sensor power consumption.
Summary of the invention
The embodiment of the present application provides a kind of lamination cmos image sensor and image processing method,
Pixel Dimensions can be reduced, reduce the power consumption of cmos image sensor.
The technical solution of the application is achieved in that
The embodiment of the present application provides a kind of lamination cmos image sensor, the complementary gold of the lamination
Belonging to oxide semiconductor image sensor includes:
Two kinds of lamination pixel units being arranged alternately, described two lamination pixel units include two pole of photoelectricity of three kinds of sizes
Pipe PD column, wherein each lamination pixel unit in described two lamination pixel units is arranged two layers of PD column respectively, and described two
Layer photodiode PD column include in the PD column and two layers of PD column of two kinds of sizes each layer of PD column dimension it is identical, described two
Kind lamination pixel unit absorbs RGB three coloured light using the PD column of three kinds of sizes respectively, and the RGB three coloured light is corresponding
Optical signal is converted into the corresponding electric signal of RGB three coloured light；
The cmos pixel reading circuit being connect with the output end of described two lamination pixel units, each layer of PD column with
One cmos pixel reading circuit connection, the cmos pixel reading circuit read the electricity for amplifying the electric signal
Signal.
In above-mentioned lamination cmos image sensor, the lamination complementary metal oxide is partly led
Body imaging sensor further include: the colour filter being connect with the input terminal of each lamination pixel unit；
The colour filter is filtered for imaging optical signal of the colouring information based on the colour filter to light source, obtains
To RGB combination light；
Each described lamination pixel unit, specifically for the PD column using described two sizes, from the RGB combination light
In successively absorb two kinds of RGB monochromatic light.
In above-mentioned lamination cmos image sensor, the colouring information by it is described each fold
Described two RGB monochromatic light that layer pixel unit absorbs determine.
The each layer of PD column in above-mentioned lamination cmos image sensor, in two layers of PD column
Circuit connection is connect by transfer gate with one cmos pixel reading circuit.
It is nearest apart from light source in two layers of PD column in above-mentioned lamination cmos image sensor
The first PD column layer include one group of PD column；
The 2nd PD column layer in two layers of PD column includes the first transfer gate connection circuit and one group of PD column, and described first turn
It is that the corresponding transfer gate of the first PD column layer connects circuit that sliding door, which connects circuit, and the 2nd PD column layer is two layers of PD column
In PD column layer in addition to the first PD column layer.
It is two neighboring in each layer of PD column in above-mentioned lamination cmos image sensor
Distance is pre-determined distance between PD column, size and institute of the number of PD column by the lamination pixel unit in the first PD column layer
Pre-determined distance is stated to determine, in the 2nd PD column layer number of PD column by first transfer gate connection circuit size, described
The size of lamination pixel unit and the pre-determined distance determine.
In above-mentioned lamination cmos image sensor, each floor PD column includes an area n,
The electric signal focuses on the area n of each floor PD column.
In above-mentioned lamination cmos image sensor, each layer of PD column is for absorbing RGB
The size of monochromatic light, each layer of PD column is determined by the RGB monochromatic light.
In above-mentioned lamination cmos image sensor, the shape of the PD column include it is cylindrical and
Regular polygon.
In above-mentioned lamination cmos image sensor, one cmos pixel reading circuit packet
Include: the transfering transistor that circuit connection is connect with the transfer gate, the read-out area being connect with the transfering transistor and with it is described
The amplifier tube of read-out area connection；
The transfering transistor, for the electric signal to be transferred to read-out area from the PD column, with from the reading
Read the electric signal in area；
The amplifier tube, for amplifying the electric signal of the read-out area.
In above-mentioned lamination cmos image sensor, the cmos pixel reading circuit is also wrapped
It includes: the reset transistor being connect with the read-out area and the amplifier tube；
The read-out area is also used to read the reset level in the reset transistor；
The amplifier tube is also used to amplify the reset level.
The embodiment of the present application provides a kind of image processing method, is applied to lamination complementary metal-oxide-semiconductor image and passes
Sensor, the lamination cmos image sensor include two kinds of lamination pixel units being arranged alternately and
Cmos pixel reading circuit, described two lamination pixel units include the PD column of three kinds of sizes, wherein described two lamination pixels
Each lamination pixel unit in unit includes the PD column of two kinds of sizes, which comprises
Two kinds of RGB monochromatic light are successively absorbed using the PD column of two kinds of sizes of each lamination pixel unit, with benefit
RGB three coloured light is absorbed respectively with the PD column of three kinds of sizes, and the corresponding optical signal of the RGB three coloured light is converted into telecommunications
Number；
Amplify the electric signal using the cmos pixel reading circuit, and reads the electric signal.
In the above-mentioned methods, the lamination cmos image sensor further include with it is described each
The colour filter of the input terminal connection of lamination pixel unit, the PD of two kinds of sizes using each lamination pixel unit
Before column successively absorbs two kinds of RGB monochromatic light, the method also includes:
Colouring information based on the colour filter is filtered the imaging optical signal of light source, obtains RGB combination light；
Correspondingly, the PD column of two kinds of sizes using each lamination pixel unit successively absorbs two kinds of RGB
Monochromatic light, comprising:
Using the PD column of described two sizes, two kinds of RGB monochromatic light are successively absorbed from the RGB combination light.
In the above-mentioned methods, a cmos pixel reading circuit includes: turn connecting with described two lamination pixel units
Shifting transistor, the read-out area being connect with the transfering transistor and the amplifier tube being connect with the read-out area；Described in the utilization
Cmos pixel reading circuit amplifies the electric signal, and reads the electric signal, comprising:
The electric signal is transferred to read-out area from each layer of PD column using the transfering transistor；
The electric signal is read from the read-out area；
The electric signal of the read-out area is amplified using amplifier tube.
The embodiment of the present application provides a kind of storage medium, is stored thereon with computer program, is applied to lamination complementary metal
Oxide semiconductor image sensor, the computer program realize method as described in any one of the above embodiments when being executed by processor.
The embodiment of the present application provides a kind of lamination cmos image sensor and image processing method
Method, the lamination cmos image sensor include: two kinds of lamination pixel units being arranged alternately, and two kinds folded
Layer pixel unit includes the photodiode PD column of three kinds of sizes, wherein each lamination picture in two kinds of lamination pixel units
Plain unit is arranged two layers of PD column respectively, and two layers of photodiode PD column includes each in the PD column and two layers of PD column of two kinds of sizes
Layer PD column dimension is identical, and two kinds of lamination pixel units absorb RGB three coloured light using the PD column of three kinds of sizes respectively, and by RGB tri-
The corresponding optical signal of coloured light is converted into the corresponding electric signal of RGB three coloured light；It is connect with the output end of two kinds of lamination pixel units
Cmos pixel reading circuit, each layer of PD column are connect with a cmos pixel reading circuit, and cmos pixel reading circuit is for putting
Big electric signal, and read electric signal.Using above-mentioned lamination cmos image sensor implementation, utilize
The PD column for two kinds of lamination pixel units, the three kinds of sizes of arrangement being arranged alternately, absorbs RGB with the PD column using three kinds of sizes respectively
Three coloured light reduces Pixel Dimensions, and the signal in tri- channels R, G, B is directly obtained using two kinds of lamination pixel units, reduces
The number of signals of each lamination pixel unit acquisition, thereby reduces the function of cmos image sensor
Consumption.
Detailed description of the invention
Fig. 1 is that a kind of structure of lamination cmos image sensor provided by the embodiments of the present application is shown
It is intended to；
Fig. 2 is a kind of schematic diagram of illustrative color filter array provided by the embodiments of the present application；
Fig. 3 is a kind of illustrative lamination cmos image sensor provided by the embodiments of the present application
Section circuit diagram；
Fig. 4 (a) is that a kind of pixel of the first layer PD of illustrative lamination pixel unit 1 provided by the embodiments of the present application is cut
Face schematic diagram；
Fig. 4 (b) is a kind of illustrative lamination pixel unit 1 and lamination pixel unit 2 provided by the embodiments of the present application
The pixel schematic cross-section of second layer PD；
Fig. 4 (c) is that a kind of pixel of the second layer PD of illustrative lamination pixel unit 1 provided by the embodiments of the present application is cut
Face schematic diagram；
Fig. 5 is a kind of illustrative lamination cmos image sensor provided by the embodiments of the present application
Cmos pixel reading circuit electrical block diagram；
Fig. 6 is a kind of flow chart of image processing method provided by the embodiments of the present application.
Specific embodiment
It should be appreciated that specific embodiment described herein is only used to explain the application.It is not used to limit the application.
Embodiment one
The embodiment of the present application provides a kind of lamination cmos image sensor 1, as shown in Figure 1, institute
Stating lamination cmos image sensor 1 includes:
Two kinds of lamination pixel units 10 being arranged alternately, described two lamination pixel units 10 include the photoelectricity of three kinds of sizes
Diode PD column 100, wherein each lamination pixel unit in described two lamination pixel units 10 is arranged two layers of PD respectively
Column 100, two layers of photodiode PD column 100 include each layer of PD in the PD column of two kinds of sizes and two layers of PD column 100
Column dimension is identical, and described two lamination pixel units 10 absorb RGB three coloured light using the PD column of three kinds of sizes respectively, and will
The corresponding optical signal of the RGB three coloured light is converted into the corresponding electric signal of RGB three coloured light；
The cmos pixel reading circuit 11 being connect with the output end of described two lamination pixel units 10, each layer of PD
Column 100 is connect with a cmos pixel reading circuit 11, and the cmos pixel reading circuit 11 is used to amplify the electric signal, and
Read the electric signal.
A kind of lamination cmos image sensor that the embodiment of the present application proposes is applied to acquisition
The optical signal arrived carries out image procossing, obtains under the scene of the corresponding image of optical signal.
In the embodiment of the present application, lamination cmos image sensor includes that two kinds be arranged alternately are folded
Layer pixel unit and cmos pixel reading circuit, wherein two pole of photoelectricity of three kinds of sizes is provided in two kinds of lamination pixel units
Manage (PD, Photo Diode) column, specific set-up mode are as follows: for each lamination pixel in two kinds of lamination pixel units
For unit, one layer of PD column is a kind of PD column of size, and each lamination pixel unit includes two layers of PD column, therefore, each
Lamination pixel unit is provided with the PD column of two kinds of sizes, further, for two kinds of lamination pixel units, two kinds of lamination pictures
Plain unit has the size of one layer of PD column identical respectively, is provided with the PD column of three kinds of sizes for two kinds of lamination pixel units as a result,.
It should be noted that for two be arranged alternately kind lamination pixel unit that the embodiment of the present application proposes,
In the surrounding of any lamination pixel unit be another lamination pixel unit, with lamination pixel unit 1 and lamination pixel
It is illustrated for both the lamination pixel units of unit 2, the surrounding of lamination pixel unit 1 is lamination pixel unit 2, lamination
The surrounding of pixel unit 2 is lamination pixel unit 1.
It is illustrated by taking lamination pixel unit 1 and lamination pixel unit 2 both lamination pixel units as an example, lamination pixel
Unit 1 and lamination pixel unit 2 are arranged alternately, i.e., according to lamination pixel unit 1, lamination pixel unit 2, layer pixel unit 1, folded
Layer pixel unit 2 is successively arranged or lamination pixel unit 2, lamination pixel unit 1, layer pixel unit 2, lamination pixel unit 1
It successively arranges, is specifically selected according to the actual situation, the embodiment of the present application does not do specific restriction, wherein lamination pixel
The PD column that the first layer setting diameter of unit 1 is 60nm, the PD column that the second layer setting diameter of lamination pixel unit 1 is 120nm,
The PD column that the first layer setting diameter of lamination pixel unit 2 is 90nm, the second layer of lamination pixel unit 2 are arranged diameter and are
The PD column of 120nm.
In the embodiment of the present application, two kinds of lamination pixel units being arranged alternately are absorbed respectively using the PD column of three kinds of sizes
RGB three coloured light, wherein various sizes of PD column is for absorbing different RGB monochromatic light.
In the embodiment of the present application, the corresponding cmos pixel reading circuit of each layer of PD column, it is seen that light is respectively through alternating
Two kinds of lamination pixel units of arrangement, two kinds of lamination pixel units absorb RGB monochromatic light using respective two layers of PD column respectively, and
RGB monochromatic light is subjected to photoelectric conversion, obtains the corresponding electric signal of RGB monochromatic light, two kinds of lamination pixel units pass through three as a result,
The PD column of kind size absorbs RGB three coloured light, and RGB three coloured light is converted to the corresponding electric signal of RGB three coloured light, later, each
Layer PD column by the corresponding electric signal transmission of RGB monochromatic light into a corresponding cmos pixel reading circuit, each layer of PD column pair
The corresponding electric signal of RGB monochromatic light is amplified and is read by the cmos pixel reading circuit answered, and cmos pixel reads electricity as a result,
The corresponding electric signal of RGB three coloured light is amplified and read on road.
In the embodiment of the present application, the size of each layer of PD column is determined by the RGB monochromatic light that its needs absorbs, specific basis
Actual conditions are configured, and the embodiment of the present application does not do specific restriction.
Illustratively, the first layer PD column of the first lamination pixel unit in two kinds of lamination pixel units is for absorbing indigo plant
Light, next layer of PD column is for absorbing feux rouges；The first layer PD column of second of lamination pixel unit is for absorbing green light, next layer of PD
Column is for absorbing feux rouges, and the laminated layer sequence of two kinds of lamination pixel units is not limited only to aforesaid way, need to only meet two kinds of laminations
Pixel unit absorbs RGB three coloured light jointly, is specifically selected according to the actual situation, and the embodiment of the present application is not made specifically
Restriction.
For example, when absorbing green light, the diameter of cylindrical PD column is 90nm for cylindrical PD column；It is blue when absorbing
Light time, the diameter of cylindrical PD column are 60nm；When absorbing feux rouges, the diameter of cylindrical PD column is 120nm.
Further, the thickness of each layer of PD column is between 80nm-500nm, when the more big then absorptivity of thickness is higher, absorbs
Purity is lower, such as using PD column absorb blue light scene under, PD column with a thickness of 1 μm when, the PD column absorb blue light absorption
Rate reaches 98%, however can absorb part feux rouges and green light, and the absorption purity to blue light is caused to reduce.
In the embodiment of the present application, after cmos pixel reading circuit reading RGB three coloured light corresponding electric signal, CMOS picture
Plain reading circuit is by the corresponding electric signal transmission of RGB three coloured light to image processing unit, and image processing unit is to RGB three coloured light pair
The electric signal answered is handled, and the corresponding color image of imaging optical signal is obtained.
Optionally, the lamination cmos image sensor 1 further include: with each described lamination
The colour filter 12 of the input terminal connection of pixel unit 10；
The colour filter 12 is filtered for imaging optical signal of the colouring information based on the colour filter to light source,
Obtain RGB combination light；
Each described lamination pixel unit 10, specifically for the PD column using described two sizes, from the RGB combination
Two kinds of RGB monochromatic light are successively absorbed in light.
In the embodiment of the present application, colour filter is covered in the input terminal of each lamination pixel unit, the colour filter is for saturating
Specified RGB combination light is crossed, the veiling glares such as other ultraviolet lights and infrared light are filtered out.
In the embodiment of the present application, the imaging optical signal that light source issues is by after colour filter, colour filter filters out imaging
The veiling glare of ultraviolet light, infrared light in signal and other colors, and pass through the corresponding RGB combination light of colouring information of colour filter,
Later, RGB combination light successively passes through two layers of PD column, and each layer of PD column in two layers of PD column carries out phase using respective PD column dimension
The RESONANCE ABSORPTION answered, successively to absorb corresponding RGB monochromatic light from RGB combination light.
Optionally, described two RGB monochromatic light that the colouring information is absorbed by each described lamination pixel unit 10
It determines.
In the embodiment of the present application, two kinds of RGB monochromes that the colouring information of colour filter is absorbed by each lamination pixel unit
What light determined, for example, the colour filter covered thereon is purple when lamination pixel unit absorbs blue light and feux rouges；When lamination picture
When plain unit absorbs green light and feux rouges, the colour filter covered thereon is yellow.
Illustratively, as shown in Fig. 2, being the color filter array covered above two kinds of lamination pixel units being arranged alternately,
Including the purple colour filter through blue light and feux rouges and through green and red yellow filter, in Fig. 2, P represents purple
Colour filter, Y represent yellow filter.
Optionally, each layer of PD column 100 in two layers of PD column 100 and one cmos pixel reading circuit 11 are logical
Transfer gate connection circuit 13 is crossed to connect.
In the embodiment of the present application, lamination cmos image sensor further includes transfer gate connection electricity
Road, transfer gate connection circuit be in each layer of PD column and a cmos pixel reading circuit corresponding with each layer of PD column it
Between, for connecting each layer of PD column and a cmos pixel reading circuit corresponding with each layer of PD column, when each layer of PD column will
After the RGB monochromatic light of absorption is converted to the corresponding electric signal of RGB monochromatic light, circuit is connected for RGB monochromatic light by transfer gate
Corresponding electric signal transmission is to cmos pixel reading circuit, so that cmos pixel reading circuit is by the corresponding telecommunications of RGB monochromatic light
It number amplifies and reads.
Optionally, the first PD column layer nearest apart from light source in two layers of PD column 100 includes one group of PD column；
The 2nd PD column layer in two layers of PD column 100 includes the first transfer gate connection circuit 13 and one group of PD column 100, institute
Stating the first transfer gate connection circuit 13 is that the corresponding transfer gate of the first PD column layer connects circuit, the 2nd PD column layer 100
For the PD column layer in two layers of PD column in addition to the first PD column layer.
In the embodiment of the present application, two layers of PD column respectively corresponds two kinds of hierarchical structures, wherein the first is nearest apart from light source
The first PD column layer, wherein one group of PD column of arranging；It is the 2nd PD column layer in two layers of PD column in addition to the first PD column layer in second,
The first transfer gate of middle arrangement connects circuit and one group of PD column, and the first transfer gate is the corresponding transfer gate connection of the first PD column layer
Circuit.
Illustratively, by taking two layer laminate cmos image sensors as an example, the signal of pixel section
Figure is as shown in figure 3, two layer laminate cmos image sensors include two stackings for covering purplish filter
Layer pixel unit 1, the two layer laminate pixel units 2 and cmos pixel reading circuit for covering yellow filter, signal circulation side
To first pass through purplish filter and yellow filter, using two layer laminate pixel units 1 and two layer laminate pixel units 2,
Later using cmos pixel reading circuit.Two layer laminate pixel units 1 are by the first layer PD column nearest apart from light source and with
The adjacent second layer PD column composition of one layer of PD column, first layer PD column are used to absorb feux rouges for absorbing blue light, second layer PD column,
In, first layer PD column includes 16 PD columns, as shown in Fig. 4 (a), wherein B represents blue, is provided with below 16 PD columns
One area n, the transfer gate of the area a n connection first layer PD connect circuit, and the transfer gate of first layer PD connects circuit connection
Cmos pixel reading circuit；Second layer PD column includes that 12 PD columns with the transfer gate of first layer PD column connect circuit, such as Fig. 4 (b)
It is shown, wherein R represents red, and the area n is provided with below 12 PD columns, the transfer of the area a n connection second layer PD
Door connection circuit, the transfer gate of second layer PD connect circuit connection cmos pixel reading circuit；Two layer laminate pixel units 2 by away from
The first layer PD column nearest from light source and the second layer PD column composition adjacent with first layer PD column, first layer PD column are green for absorbing
Light, second layer PD column is for absorbing feux rouges, wherein first layer PD column includes 16 PD columns, as shown in Fig. 4 (c), wherein G is represented
Green is provided with the area n below 16 PD columns, the transfer gate connection circuit of the area a n connection first layer PD, and first
The transfer gate of layer PD connects circuit connection cmos pixel reading circuit；Second layer PD column includes 12 PD columns and first layer PD column
Transfer gate connection circuit is provided with the area n as shown in Fig. 4 (b) below 12 PD columns, which connects the second layer
The transfer gate of PD connects circuit, and the transfer gate of second layer PD connects circuit connection cmos pixel reading circuit.
Based on two layer laminates cmos image sensor shown in Fig. 3, specific RGB light acquisition
Process are as follows: light penetrates purplish filter and yellow filter respectively, obtains violet ray and yellow light, later purple light
Line passes through the first layer PD of two layer laminate pixel units 1, and based on the RESONANCE ABSORPTION of first layer PD, the blue light in violet ray is inhaled
Electric signal is received and is converted into, the corresponding electric signal of blue light connects circuit transmission to cmos pixel by the transfer gate of first layer PD and reads
Circuit out, residual ray by the red light absorption in light and are converted into through second layer PD based on the RESONANCE ABSORPTION of second layer PD
Electric signal, the corresponding electric signal of feux rouges connect circuit transmission to cmos pixel reading circuit by the transfer gate of second layer PD；It is yellow
Coloured light line will be green in yellow light based on the RESONANCE ABSORPTION of first layer PD by the first layer PD of two layer laminate pixel units 2
Light absorption is simultaneously converted into electric signal, and the corresponding electric signal of green light connects circuit transmission to CMOS picture by the transfer gate of first layer PD
Plain reading circuit, residual ray penetrate second layer PD, based on the RESONANCE ABSORPTION of second layer PD column, simultaneously by the red light absorption in light
It is converted into electric signal, the corresponding electric signal of feux rouges connects circuit transmission to cmos pixel by the transfer gate of second layer PD and reads electricity
Road.At this point, cmos pixel reading circuit receives RGB three coloured light.
Optionally, distance is pre-determined distance between the two neighboring PD column 100 in each layer of PD column 100, described the
The number of PD column is determined by the size and the pre-determined distance of the lamination pixel unit in one PD column layer 100, the 2nd PD
In column layer 100 number of PD column by first transfer gate connection size of circuit 13, the size of the lamination pixel unit and
The pre-determined distance determines.
In the embodiment of the present application, the pre-determined distance between two neighboring PD column in each layer of PD column is more than or equal to
50nm, it is possible thereby to avoid interfering with each other between adjacent PD column.
In the embodiment of the present application, since there is no the corresponding transfer gates of other PD column layers to connect circuit for first layer PD column, therefore,
The number of PD column is obtained by the size of lamination pixel unit divided by pre-determined distance in first layer PD column；Since second layer PD column also wraps
The corresponding first transfer gate connection circuit of first layer PD column is included, therefore, the number of PD column is by lamination pixel unit in second layer PD column
Size subtract the size of the first transfer gate after, obtained divided by pre-determined distance, specific calculation method is according to practical feelings
Condition is configured and adjusts, and the embodiment of the present application does not do specific restriction.
Optionally, each floor PD column 100 includes an area n, and the electric signal focuses on the n of each layer of PD column
Area.
In the embodiment of the present application, one area n is set in the lower section of each floor PD column, which is equal to two kinds of lamination pixels
The output end of unit, the area n connect circuit with transfer gate and are attached, and each layer of PD column is by the electrical signal set after photoelectric conversion
In arrive the area n, and circuit transmission is connected to cmos pixel reading circuit by transfer gate.
Further, the corresponding area p of each PD column, the area p of first layer PD column is equal to two kinds of lamination pixel units
Input terminal, colour filter is covered on first layer PD column.
Optionally, each layer of PD column 100 is for absorbing RGB monochromatic light, and the size of each layer of PD column 100 is by institute
RGB monochromatic light is stated to determine.
In the embodiment of the present application, the diameter of PD column is that the refractive index based on the monochromatic resonant wavelength of RGB and optical signal is true
Fixed, or obtained by optical analog, it is specifically selected according to the actual situation, the embodiment of the present application is not done specifically
It limits.
In the embodiment of the present application, the size of PD column is determined using formula (1)
The size of PD column=(resonant wavelength-preset constant)/refractive index (1)
In the embodiment of the present application, each layer of PD column absorbs a kind of RGB monochromatic light, when absorbing green light, this layer of PD column it is straight
Diameter is 90nm；When absorbing blue light, the diameter of this layer of PD column is 60nm；When absorbing feux rouges, the diameter of this layer of PD column is
120nm。
Optionally, the shape of the PD column 100 includes cylindrical and regular polygon, is specifically selected according to the actual situation
It selects, the embodiment of the present application does not do specific restriction.
Optionally, one cmos pixel reading circuit 11 includes: that turning for the connection of circuit 13 is connect with the transfer gate
Shifting transistor 110, the read-out area 111 being connect with the transfering transistor 110 and the amplifier tube being connect with the read-out area 111
112；
The transfering transistor 110, for the electric signal to be transferred to read-out area 111 from the PD column, with from institute
It states read-out area 111 and reads the electric signal；
The amplifier tube 112, for amplifying the electric signal of the read-out area 111.
In the embodiment of the present application, the source electrode of transfering transistor connect circuit connection with transfer gate；The transfering transistor
Drain electrode is connect with FD (read-out area)；Electric signal is focused on the area n+ of transfering transistor by PD column, and is shifted by transfering transistor
To FD.
In the embodiment of the present application, in the depletion region of PD column photoelectric conversion occurs for light, converts optical signals into electric signal, it
Transfering transistor gathers electric signal in the area the n+ channel of transfering transistor afterwards；Electric signal in the area Bing Jiang n+ channel is transferred to
FD。
Optionally, the cmos pixel reading circuit 11 further include: connect with the read-out area 111 and the amplifier tube 112
The reset transistor 113 connect；
The read-out area 111 is also used to read the reset level in the reset transistor 113；
The amplifier tube 112 is also used to amplify the reset level.
In the embodiment of the present application, the source electrode of reset transistor is connected with power supply；The drain electrode of reset transistor is connected with FD, wherein is resetted
It is stored with reset level in pipe, reset level is read by FD.
In the embodiment of the present application, reset level is read from reset transistor respectively, reads electric signal from transfering transistor, later,
After amplifying to reset level and electric signal, the reset level of electric signal and amplification to amplification carries out correlated-double-sampling,
To reduce the noise for reading electric signal.
As shown in figure 5, being the rough schematic view of pixel unit circuit, the first layer PD column of lamination pixel unit 1 absorbs blue
Light, second layer PD column absorb feux rouges, and purple colour filter is covered on the first layer PD column of lamination pixel unit 1；Lamination pixel list
The first layer PD column of member 2 absorbs green light, and second layer PD column absorbs feux rouges, covers on the first layer PD column of lamination pixel unit 2
Yellow filter；Wherein, by taking the PD column layer of the absorption blue light of lamination pixel unit as an example, the corresponding transfer of PD column of blue light is absorbed
Door connection circuit is connected with the source electrode of transfering transistor, and the drain electrode of transfering transistor is connect with FD；FD also with the drain electrode of reset transistor
Connection, the source electrode of reset transistor are connected with power supply；FD is also connect with the grid of BSF, and the source electrode of BSF is connected with power supply, the drain electrode of BSF
It is connect with the source electrode of gate tube, the drain electrode of gate tube is connected with output end.
It is understood that using the PD column for two kinds of lamination pixel units, the three kinds of sizes of arrangement being arranged alternately, to utilize
The PD column of three kinds of sizes absorbs RGB three coloured light respectively, reduces Pixel Dimensions, and directly obtain using two kinds of lamination pixel units
R, the signal in tri- channels G, B reduces the number of signals of each lamination pixel unit acquisition, thereby reduces complementary metal oxygen
The power consumption of compound semiconductor image sensor.
Embodiment two
The embodiment of the present application provides a kind of image processing method, is applied to lamination complementary metal-oxide-semiconductor image and passes
Sensor, lamination cmos image sensor include the two kinds of lamination pixel units and CMOS picture being arranged alternately
Plain reading circuit, two kinds of lamination pixel units include the PD column of three kinds of sizes, wherein each in two kinds of lamination pixel units
Lamination pixel unit includes the PD column of two kinds of sizes, as shown in fig. 6, this method may include:
S101, two kinds of RGB monochromatic light are successively absorbed using the PD column of two kinds of sizes of each lamination pixel unit, with benefit
RGB three coloured light is absorbed respectively with the PD column of three kinds of sizes, and the corresponding optical signal of RGB three coloured light is converted into electric signal.
A kind of image processing method provided by the embodiments of the present application is suitable for carrying out image procossing to collected optical signal,
It obtains under the scene of the corresponding image of optical signal.
In the embodiment of the present application, each lamination pixel unit in two kinds of lamination pixel units 10 is arranged two layers of PD respectively
Column 100, two layers of photodiode PD column 100 include each layer of PD column dimension phase in the PD column and two layers of PD column 100 of two kinds of sizes
Together.
In the embodiment of the present application, by taking lamination pixel unit 1 and lamination pixel unit 2 both lamination pixel units as an example into
Row explanation, lamination pixel unit 1 and lamination pixel unit 2 are arranged alternately, i.e., according to lamination pixel unit 1, lamination pixel unit
2, layer pixel unit 1, lamination pixel unit 2 are successively arranged or lamination pixel unit 2, lamination pixel unit 1, layer pixel list
Member 2, lamination pixel unit 1 are successively arranged, and are specifically selected according to the actual situation, the embodiment of the present application does not do specific limit
It is fixed, wherein the PD column that the first layer setting diameter of lamination pixel unit 1 is 60nm, the second layer setting of lamination pixel unit 1 are straight
PD column of the diameter for 120nm, the PD column that the first layer setting diameter of lamination pixel unit 2 is 90nm, the second of lamination pixel unit 2
The PD column that layer setting diameter is 120nm.
Further, lamination cmos image sensor further includes and each lamination pixel unit
Input terminal connection colour filter, lamination cmos image sensor utilize each lamination pixel unit
Two kinds of sizes PD column successively absorb two kinds of RGB monochromatic light before, based on the colouring information of colour filter to the imaging of light source
Signal is filtered, and obtains RGB combination light；Lamination cmos image sensor utilizes each lamination picture
The PD column of two kinds of sizes of plain unit successively absorbs two kinds of RGB monochromatic light, specifically: lamination complementary metal oxide semiconductor figure
As sensor utilize two kinds of sizes PD column, two kinds of RGB monochromatic light are successively absorbed from RGB combination light.
In the embodiment of the present application, the imaging optical signal that light source issues is by after colour filter, colour filter filters out imaging
The veiling glare of ultraviolet light, infrared light in signal and other colors, and pass through the corresponding RGB combination light of colouring information of colour filter,
Later, RGB combination light successively passes through two layers of PD column, and each layer of PD column in two layers of PD column carries out phase using respective PD column dimension
The RESONANCE ABSORPTION answered, successively to absorb corresponding RGB monochromatic light from RGB combination light.
Illustratively, for cylindrical PD column, when absorbing green light, the diameter of cylindrical PD column is 90nm；Work as suction
When receiving blue light, the diameter of cylindrical PD column is 60nm；When absorbing feux rouges, the diameter of cylindrical PD column is 120nm.
Further, the thickness of each layer of PD column is between 80nm-500nm, when the more big then absorptivity of thickness is higher, absorbs
Purity is lower, such as using PD column absorb blue light scene under, PD column with a thickness of 1 μm when, the PD column absorb blue light absorption
Rate reaches 98%, however can absorb part feux rouges and green light, and the absorption purity to blue light is caused to reduce.
In the embodiment of the present application, the pre-determined distance between two neighboring PD column in each layer of PD column is more than or equal to
50nm, it is possible thereby to avoid interfering with each other between adjacent PD column.
In the embodiment of the present application, two kinds of RGB monochromes that the colouring information of colour filter is absorbed by each lamination pixel unit
What light determined, for example, the colour filter covered thereon is purple when lamination pixel unit absorbs blue light and feux rouges；When lamination picture
When plain unit absorbs green light and feux rouges, the colour filter covered thereon is yellow.
In the embodiment of the present application, two layers of PD column respectively corresponds two kinds of hierarchical structures, wherein the first is nearest apart from light source
The first PD column layer, wherein one group of PD column of arranging；It is the 2nd PD column layer in two layers of PD column in addition to the first PD column layer in second,
The first transfer gate of middle arrangement connects circuit and one group of PD column, and the first transfer gate is the corresponding transfer gate connection of the first PD column layer
Circuit.
In the embodiment of the present application, one area n is set in the lower section of each floor PD column, which is equal to two kinds of lamination pixels
The output end of unit, the area n connect circuit with transfer gate and are attached, and each layer of PD column is by the electrical signal set after photoelectric conversion
In arrive the area n, and circuit transmission is connected to cmos pixel reading circuit by transfer gate.
Further, the corresponding area p of each PD column, the area p of first layer PD column is equal to two kinds of lamination pixel units
Input terminal, colour filter is covered on first layer PD column.
In the embodiment of the present application, the imaging optical signal that light source issues is by after colour filter, filtering out in imaging optical signal
Ultraviolet light and infrared light, and through the corresponding RGB combination light of colour filter, later, RGB combination light successively passes through two layers of PD column,
Each layer of PD column in two layers of PD column carries out corresponding RESONANCE ABSORPTION using respective PD column dimension, each layer of PD column successively from
Corresponding RGB monochromatic light is absorbed in RGB combination light.
S102, amplify electric signal using cmos pixel reading circuit, and read electric signal.
When the corresponding optical signal of RGB three coloured light is converted into telecommunications by lamination cmos image sensor
After number, lamination cmos image sensor amplifies electric signal using cmos pixel reading circuit, and reads
Electric signal out.
In the embodiment of the present application, a cmos pixel reading circuit includes: the transfer connecting with two kinds of lamination pixel units
Transistor, the read-out area being connect with transfering transistor and the amplifier tube being connect with read-out area；Lamination complementary metal oxide is partly led
Body imaging sensor amplifies electric signal using cmos pixel reading circuit, and reads the process of electric signal specifically: utilizes transfer
Electric signal is transferred to read-out area from each layer of PD column by transistor；Electric signal is read from read-out area；It will be read using amplifier tube
The electric signal in area amplifies.
As shown in figure 5, being the rough schematic view of single pixel element circuit, the first layer PD column of lamination pixel unit 1 is inhaled
Blue light is received, second layer PD column absorbs feux rouges, and purple colour filter is covered on the first layer PD column of lamination pixel unit 1；Lamination picture
The first layer PD column of plain unit 2 absorbs green light, and second layer PD column absorbs feux rouges, on the first layer PD column of lamination pixel unit 2
Cover yellow filter；Wherein, by taking the PD column layer of the absorption blue light of lamination pixel unit as an example, the PD column for absorbing blue light is corresponding
Transfer gate connection circuit is connected with the source electrode of transfering transistor, and the drain electrode of transfering transistor is connect with FD；FD also with reset transistor
Drain electrode connection, the source electrode of reset transistor are connected with power supply；FD is also connect with the grid of BSF, and the source electrode of BSF is connected with power supply, BSF's
Drain electrode is connect with the source electrode of gate tube, and the drain electrode of gate tube is connected with output end.
It is understood that using the PD column for two kinds of lamination pixel units, the three kinds of sizes of arrangement being arranged alternately, to utilize
The PD column of three kinds of sizes absorbs RGB three coloured light respectively, reduces Pixel Dimensions, and directly obtain using two kinds of lamination pixel units
R, the signal in tri- channels G, B reduces the number of signals of each lamination pixel unit acquisition, thereby reduces complementary metal oxygen
The power consumption of compound semiconductor image sensor.
Embodiment three
The embodiment of the present application provides a kind of storage medium, is stored thereon with computer program, above-mentioned computer-readable storage
Media storage has one or more program, and said one or multiple programs can be executed by one or more processor, be answered
For in lamination cmos image sensor 1, which to realize the figure as described in embodiment two
As processing method.
Specifically, the corresponding program instruction of one of the present embodiment image processing method read by an electronic equipment or
It is performed, includes the following steps:
Two kinds of RGB monochromatic light are successively absorbed using the PD column of two kinds of sizes of each lamination pixel unit, with benefit
RGB three coloured light is absorbed respectively with the PD column of three kinds of sizes, and the corresponding optical signal of the RGB three coloured light is converted into telecommunications
Number；
Amplify the electric signal using the cmos pixel reading circuit, and reads the electric signal.
In an embodiment of the present invention, further, lamination cmos image sensor further includes
The colour filter being connect with the input terminal of each lamination pixel unit, each lamination pixel unit described in
Before the PD column of two kinds of sizes successively absorbs two kinds of RGB monochromatic light, said one or multiple programs are by said one or more
A processor executes, and also performs the steps of
Colouring information based on the colour filter is filtered the imaging optical signal of light source, obtains RGB combination light；
Correspondingly, the PD column of two kinds of sizes using each lamination pixel unit successively absorbs two kinds of RGB
Monochromatic light, said one or multiple programs are executed by said one or multiple processors, implement following steps:
Using the PD column of described two sizes, two kinds of RGB monochromatic light are successively absorbed from the RGB combination light.
In an embodiment of the present invention, further, a cmos pixel reading circuit include: in two layers of PD column
The transfering transistor of each layer of PD column connection, the read-out area that is connect with the transfering transistor and connect with the read-out area
Amplifier tube；It is described to amplify the electric signal using the cmos pixel reading circuit, and read the electric signal, said one or
The multiple programs of person are executed by said one or multiple processors, implement following steps:
The electric signal is transferred to read-out area from each layer of PD column using the transfering transistor；
The electric signal is read from the read-out area；
The electric signal of the read-out area is amplified using amplifier tube.
The above, the only preferred embodiment of the application, are not intended to limit the protection scope of the application.
Claims (15)
1. a kind of lamination cmos image sensor, which is characterized in that the lamination complementary metal oxidation
Object semiconductor image sensor includes:
Two kinds of lamination pixel units being arranged alternately, described two lamination pixel units include the photodiode PD of three kinds of sizes
Column, wherein each lamination pixel unit in described two lamination pixel units is arranged two layers of PD column respectively, two layers of the light
Electric diode PD column include in the PD column of two kinds of sizes and two layers of PD column each layer of PD column dimension it is identical, it is described two folded
Layer pixel unit absorbs RGB three coloured light using the PD column of three kinds of sizes respectively, and the corresponding light of the RGB three coloured light is believed
Number it is converted into the corresponding electric signal of RGB three coloured light；
The cmos pixel reading circuit being connect with the output end of described two lamination pixel units, each layer of PD column and one
The connection of cmos pixel reading circuit, the cmos pixel reading circuit read the electric signal for amplifying the electric signal.
2. lamination cmos image sensor according to claim 1, which is characterized in that described folded
Layer cmos image sensor further include: connect with the input terminal of each lamination pixel unit
Colour filter；
The colour filter is filtered for imaging optical signal of the colouring information based on the colour filter to light source, obtains RGB
Group light combination；
Each described lamination pixel unit, specifically for using described two sizes PD column, from the RGB combination light according to
Two kinds of RGB monochromatic light of secondary absorption.
3. lamination cmos image sensor according to claim 2, which is characterized in that the face
Color information is determined by described two RGB monochromatic light that each described lamination pixel unit absorbs.
4. lamination cmos image sensor according to claim 1, which is characterized in that described two
Each layer of PD column in layer PD column connect circuit connection by transfer gate with one cmos pixel reading circuit.
5. lamination cmos image sensor according to claim 1 or 4, which is characterized in that
The first PD column layer nearest apart from light source includes one group of PD column in two layers of PD column；
The 2nd PD column layer in two layers of PD column includes the first transfer gate connection circuit and one group of PD column, first transfer gate
Connecting circuit is that the corresponding transfer gate of the first PD column layer connects circuit, and the 2nd PD column layer is to remove in two layers of PD column
PD column layer outside the first PD column layer.
6. lamination cmos image sensor according to claim 5, which is characterized in that described every
Distance is pre-determined distance between two neighboring PD column in one layer of PD column, and the number of PD column is by described folded in the first PD column layer
The size of layer pixel unit and the pre-determined distance determine that the number of PD column is by first transfer gate in the 2nd PD column layer
The size, the size of the lamination pixel unit and the pre-determined distance for connecting circuit determine.
7. lamination cmos image sensor according to claim 1, which is characterized in that described every
One floor PD column includes an area n, and the electric signal focuses on the area n of each floor PD column.
8. lamination cmos image sensor according to claim 1, which is characterized in that described every
For absorbing RGB monochromatic light, the size of each layer of PD column is determined one layer of PD column by the RGB monochromatic light.
9. lamination cmos image sensor according to claim 1, which is characterized in that the PD
The shape of column includes cylindrical and regular polygon.
10. lamination cmos image sensor according to claim 4, which is characterized in that described
One cmos pixel reading circuit includes: the transfering transistor that circuit connection is connect with the transfer gate and the transfer crystal
The read-out area of pipe connection and the amplifier tube being connect with the read-out area；
The transfering transistor, for the electric signal to be transferred to read-out area from the PD column, to be read from the read-out area
Take the electric signal；
The amplifier tube, for amplifying the electric signal of the read-out area.
11. lamination cmos image sensor according to claim 10, which is characterized in that described
Cmos pixel reading circuit further include: the reset transistor being connect with the read-out area and the amplifier tube；
The read-out area is also used to read the reset level in the reset transistor；
The amplifier tube is also used to amplify the reset level.
12. a kind of image processing method, which is characterized in that it is applied to lamination cmos image sensor,
The lamination cmos image sensor includes the two kinds of lamination pixel units and CMOS picture being arranged alternately
Plain reading circuit, described two lamination pixel units include the PD column of three kinds of sizes, wherein in described two lamination pixel units
Each lamination pixel unit include two kinds of sizes PD column, which comprises
Two kinds of RGB monochromatic light are successively absorbed using the PD column of two kinds of sizes of each lamination pixel unit, to utilize institute
The PD column for stating three kinds of sizes absorbs RGB three coloured light respectively, and the corresponding optical signal of the RGB three coloured light is converted into electric signal；
Amplify the electric signal using the cmos pixel reading circuit, and reads the electric signal.
13. according to the method for claim 12, which is characterized in that the lamination complementary metal-oxide-semiconductor image passes
Sensor further includes the colour filter connecting with the input terminal of each lamination pixel unit, described to utilize each described lamination
Before the PD column of two kinds of sizes of pixel unit successively absorbs two kinds of RGB monochromatic light, the method also includes:
Colouring information based on the colour filter is filtered the imaging optical signal of light source, obtains RGB combination light；
Correspondingly, the PD column of two kinds of sizes using each lamination pixel unit successively absorbs two kinds of RGB monochromes
Light, comprising:
Using the PD column of described two sizes, two kinds of RGB monochromatic light are successively absorbed from the RGB combination light.
14. according to the method for claim 12, which is characterized in that a cmos pixel reading circuit includes: and described two
It the transfering transistor of kind of lamination pixel unit connection, the read-out area being connect with the transfering transistor and is connect with the read-out area
Amplifier tube；It is described to amplify the electric signal using the cmos pixel reading circuit, and read the electric signal, comprising:
The electric signal is transferred to read-out area from each layer of PD column using the transfering transistor；
The electric signal is read from the read-out area；
The electric signal of the read-out area is amplified using amplifier tube.
15. a kind of storage medium, is stored thereon with computer program, it is applied to lamination complementary metal-oxide-semiconductor image and passes
Sensor, which is characterized in that such as claim 12-14 described in any item sides are realized when the computer program is executed by processor
Method.
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