CN104237239B - Detection method for defects of semiconductor element - Google Patents
Detection method for defects of semiconductor element Download PDFInfo
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- CN104237239B CN104237239B CN201310229168.5A CN201310229168A CN104237239B CN 104237239 B CN104237239 B CN 104237239B CN 201310229168 A CN201310229168 A CN 201310229168A CN 104237239 B CN104237239 B CN 104237239B
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Abstract
The invention relates to a detection method for defects of a semiconductor element, and is applied in the semiconductor element. The semiconductor element comprises a first layer and a second layer. The detection method for the defects comprises the steps of firstly focusing a detection lens to the first layer and scanning the semiconductor element to obtain a first scanning image, the first scanning image having a defect pattern; then focusing the detection lens to the second layer and scanning the semiconductor element according to a relative position of the defect pattern to obtain a second scanning image; and finally determining whether the semiconductor element has a defect or not in the relative position according to the second scanning image.
Description
Technical field
The present invention relates to a kind of flaw detection method of semiconductor element, more particularly, to a kind of difference of utilization focusing position
The different layers of semiconductor element are scanned, and the image obtaining according to scanning to judge whether semiconductor element has the flaw
The flaw detection method of defect.
Background technology
In general semiconductor technology, it will usually continue to chip after forming multiple chip when wafer (disk) surface
Carry out a survey, detection and the techniques such as classification；Wherein, characterization processes mainly use detector lens to scan chip, and foundation is swept
The image retouching acquisition is defective to judge that chip itself whether there is, and whether defect influences whether the quality of chip, and then will
The chip having major defect is chosen, to maintain the quality of chip.
Refer to Fig. 1, Fig. 1 in the prior art, the floor map that semiconductor element is scanned with detector lens.
As illustrated, semiconductor element PA100 is to invert in detection platform PA200, and detector lens PA300 are to be directed to partly to lead
The surface of volume elements part PA100 is scanned, and the product to judge semiconductor element PA100 according to the flaw pattern in scan-image
Matter；However, because common flaw mainly contains dirty, noise, scratch and spot corrosion flaw, and dirty, noise and scratch pair
For semiconductor element PA100, compare and do not interfere with its efficiency, but because spot corrosion flaw has corroded the active of chip internal
Layer, effect having influence on chip that therefore can be serious.
From the above, existing detection technique mainly uses detector lens and makees single sweep operation to chip, but according to single
The image that secondary scanning is obtained come when being judged it is easy to produce error, such as by slight for scratch of chip surface etc. flaw
It is mistaken for going deep into the critical defect such as the spot corrosion flaw of chip internal, and then lead to because False Rate is too high yield to decline.
Content of the invention
In view of in the prior art, mainly in the way of single sweep operation, the chip of quasiconductor is scanned, but
The image that obtained only in accordance with single sweep operation simultaneously cannot effectively differentiate dirty, scratch, noise and spot corrosion flaw, and then because of erroneous judgement
Rate is too high and lead to yield to decline, and relative increased cost.
Edge this, present invention is primarily targeted at provide a kind of flaw detection method of semiconductor element, it is with difference
Focal length carry out the different layers of semiconductor element are scanned and obtain with different layers scan-image, and then multilevel iudge flaw is
Which kind of flaw.
From the above, the present invention is to provide one kind partly to lead by solving the necessary technology means that problem of the prior art is adopted
The flaw detection method of volume elements part, is applied to semiconductor element, and semiconductor element comprises a ground floor and a second layer, the flaw
Defect detection method is that detector lens are focused in ground floor first, and semiconductor element is scanned sweep to obtain one first
Shading picture, and the first scan-image has a flaw pattern；Then detector lens are focused in the second layer, and according to flaw pattern
Relative position semiconductor element be scanned to obtain one second scan-image；The last scan-image of foundation second again judges half
Whether conductor element has a flaw in relative position.
It is to judge partly to lead according to the second scan-image by the above-mentioned derivative attached technological means of necessary technology means institute
Volume elements part further includes in whether relative position has step defective, when relative position does not have flaw figure in the second scan-image
During case, judge that semiconductor element has flaw in relative position, and flaw is a spot corrosion flaw.
It is to judge partly to lead according to the second scan-image by the above-mentioned derivative attached technological means of necessary technology means institute
Volume elements part further includes in whether relative position has step defective, when relative position has flaw pattern in the second scan-image
When, judge that semiconductor element has flaw in relative position, and flaw is a surface blemish.
It is that semiconductor element is light-emitting diodes by the above-mentioned derivative attached technological means of necessary technology means institute
Pipe, ground floor be an electrode layer, the second layer be a substrate layer, and flaw detection method by detector lens focus in ground floor it
Before further include a step, detector lens are focused towards the second layer.
The present invention more provides a kind of flaw detection method of semiconductor element, semiconductor element for solving problem of the prior art
Part comprises a ground floor and a second layer, and flaw detection method comprises to be that detector lens are focused in ground floor first, and
Semiconductor element is scanned to obtain one first scan-image；Then, detector lens are focused in the second layer, and half-and-half lead
Volume elements part is scanned to obtain one second scan-image；Finally, compare semiconductor element to sweep with second in the first scan-image
A relative position in shading picture, to judge whether semiconductor element has a flaw in relative position.
It is to judge partly to lead according to the second scan-image by the above-mentioned derivative attached technological means of necessary technology means institute
Volume elements part further includes in whether relative position has step defective, when relative position has a flaw figure in the first scan-image
Case and when the second scan-image does not have flaw pattern, judges that semiconductor element has flaw in relative position, and flaw is
One spot corrosion flaw.
It is to judge partly to lead according to the second scan-image by the above-mentioned derivative attached technological means of necessary technology means institute
Volume elements part further includes in whether relative position has step defective, when relative position is in the first scan-image and the second scanning shadow
As, when all having a flaw pattern, judging that semiconductor element has flaw in relative position, and flaw is a surface blemish.
It is that semiconductor element is for light-emitting diodes by the above-mentioned derivative attached technological means of necessary technology means institute
Pipe, ground floor is for an electrode layer, and the second layer is for a substrate layer, and flaw detection method is focusing detector lens in first
Further include a step before layer, detector lens are focused towards the second layer.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Brief description
Fig. 1 is in the prior art, floor map semiconductor element being scanned with detector lens；
Fig. 2 is to be shown in present pre-ferred embodiments, with detector lens, the plane that semiconductor device is scanned is shown
It is intended to；
Fig. 3 is the flow chart of steps of the flaw detection method of semiconductor element of the present invention；
Fig. 4 is the flow chart of steps of the flaw detection method of another semiconductor element of the present invention；
When Fig. 5 is shown in practice, the first scan-image being obtained during the ground floor of scanning semiconductor element is illustrated
Figure；And
When Fig. 6 is shown in practice, the second scan-image being obtained during the second layer of scanning semiconductor element is illustrated
Figure.
Wherein, reference
PA100 semiconductor element
PA200 detection platform
PA300 detector lens
100 semiconductor elements
200 detection platform
300 detector lens
1 ground floor
11 first electrodes
2 second layers
3 intermediate layers
31 second electrodes
P flaw
P1, P2, P2 ' flaw pattern
RP1, RP2 relative position
S1 first its focal lines
S2 second its focal lines
SI1 first scan-image
SI2 second scan-image
Specific embodiment
Below in conjunction with the accompanying drawings the structural principle and operation principle of the present invention is described in detail：
Refer to Fig. 2 and Fig. 3, Fig. 2 is shown in present pre-ferred embodiments, with detector lens, semiconductor device is carried out
The floor map of scanning；Fig. 3 is the flow chart of steps of the flaw detection method of semiconductor element of the present invention.As illustrated, it is many
Individual adjacent semiconductor element 100 is to invert in a detection platform 200, and semiconductor element 100 respectively comprise a ground floor 1,
One second layer 2 and an intermediate layer 3, wherein, semiconductor element 100 is for a light emitting diode, and ground floor 1 is an electrode layer,
The second layer 2 is a substrate layer, and intermediate layer 3 is located between ground floor 1 and the second layer 2.Additionally, in the present embodiment, Duo Geban
Conductor element 100 is the multiple light-emitting diode chip for backlight unit being formed through semiconductor technology by a wafer, ground floor 1 and intermediate layer 3
For semiconductor layer, and ground floor 1 is further provided with a first electrode 11, and intermediate layer 3 is further provided with a second electrode 31, and the second layer 2
The substrate layer being then e.g. made up of sapphire.
From the above, the flaw detection method of the semiconductor element of the present invention as shown in Figure 3, its step S110 be first by
One detector lens 300 are focused towards the second layer 2；Then, step S120 is that detector lens 300 are focused in ground floor 1, and
Semiconductor element 100 is scanned to obtain one first scan-image (not shown), wherein detector lens 300 are along one first
Its focal lines S1 are scanned to ground floor 1；Then, step S130 is that detector lens 300 are focused in the second layer 2, and half-and-half leads
Volume elements part 100 is scanned to obtain one second scan-image (not shown), and wherein detector lens 300 are along one second its focal lines
S2 is scanned to the second layer 2；Finally, step S140 is to compare semiconductor element 100 in the first scan-image and the second scanning
A relative position in image, to judge whether semiconductor element 100 has a flaw P in relative position.
Wherein, when relative position has a flaw pattern (not shown) and in the second scan-image not in the first scan-image
When there is flaw pattern, judge that semiconductor element 300 has flaw in relative position, and flaw is a spot corrosion flaw；When relatively
Position, when the first scan-image and the second scan-image all have a flaw pattern, judges that semiconductor element has in relative position
There is flaw, and flaw is a surface blemish.
Refer to Fig. 2 and Fig. 4, Fig. 4 is the flow chart of steps of the flaw detection method of another semiconductor element of the present invention.As
Shown in figure, step S210, S220 is identical with above-mentioned step S110, S120 respectively, and the difference of step S230 and step S130
It is, step S230 is that detector lens 300 are focused in the second layer 2, and the flaw pattern having according to the first scan-image
Relative position semiconductor element 100 is scanned to obtain the second scan-image, then step S240 is swept according to second again
Shading picture judges whether semiconductor element has flaw in relative position.Wherein, because step S230 is only for the first scanning shadow
The relative position of the flaw pattern as having is scanned to the second layer 2, therefore effectively can shorten sweep time and carry
Rise detection efficiency.
Refer to Fig. 2, Fig. 5 and Fig. 6, when Fig. 5 is shown in practice, obtained during the ground floor of scanning semiconductor element
The first scan-image schematic diagram；When Fig. 6 is shown in practice, scanning semiconductor element the second layer when obtained second
Scan-image schematic diagram.As illustrated, because the first scan-image SI1 has flaw pattern P 1 at relative position RP1, and the
Two scan-image SI2 do not have flaw pattern at relative position RP1, therefore judge semiconductor element at relative position RP1
There is flaw (not shown, to be equivalent to above-mentioned flaw P), and this flaw is a spot corrosion flaw, spot corrosion flaw is mainly quasiconductor
Element produced deep zone defect when carrying out electrostatic test.
On the other hand, because the first scan-image SI1 has flaw pattern P 2 at relative position RP2, and the second scanning
Image SI2 has flaw pattern P 2 ' at relative position RP2, therefore judges that semiconductor element has the flaw at relative position RP2
Defect, and this flaw is a surface blemish, surface blemish is mainly dirty, noise or scratch.
In sum, because the second layer of semiconductor element is nonconducting substrate layer, therefore when semiconductor element is in warp
When crossing electrostatic test, can make because substrate layer is non-conductive to puncture towards intermediate layer at the electric current self-electrode of electrostatic test and produce spot corrosion
Defect, and when semiconductor element being detected with the detection mode of prior art, its obtained scan-image is scraped because containing
Trace or the flaw such as dirty and False Rate can be made too high.
Compared to existing technologies, the flaw detection method of the semiconductor element of the present invention will not be hit based on spot corrosion defect
Wear under the principle of the second layer, to carry out with the second scan-image by the first scan-image that scanning ground floor is obtained with the second layer
Compare, you can in the defective pattern of the first scan-image the second scan-image non-defective pattern, judge semiconductor element
There is spot corrosion defect, and when the first scan-image and second scan-image all defective patterns, then judge semiconductor element institute
The defect having is scratch or the surface defect such as dirty；Thereby, the flaw detection method of semiconductor element provided by the present invention
Really effectively the flaw pattern of semiconductor element can be judged, and then avoid False Rate too high.
Further, since the flaw detection method of the semiconductor element of the present invention also can be after scanning through ground floor, according to the
The relative position of the flaw pattern of one scan image is scanned to the second layer；Thereby, you can effectively shorten sweeping of the second layer
Retouch the time, can effectively judge whether semiconductor element has spot corrosion flaw again.On practice is used, detector lens are more permissible
Relatively low resolution ground floor is made quick scanning, and the relative position being then directed to flaw pattern again is more accurate to second layer work
Scanning.
In other embodiments, the flaw detection method of semiconductor element provided by the present invention is not limited to luminous two
Pole pipe, is equally applicable for the detection of other semiconductor elements, and embodiment is not limited to the mode that above-described embodiment is lifted.
Certainly, the present invention also can have other various embodiments, in the case of without departing substantially from present invention spirit and its essence, ripe
Know those skilled in the art and work as and various corresponding changes and deformation can be made according to the present invention, but these corresponding changes and change
Shape all should belong to the protection domain of appended claims of the invention.
Claims (8)
1. a kind of flaw detection method of semiconductor element, is applied to semiconductor element, and this semiconductor element comprises one first
Layer and a second layer are it is characterised in that this flaw detection method comprises：
A () focuses detector lens in this ground floor, and this semiconductor element is scanned to obtain one first scanning shadow
Picture, and this first scan-image has a flaw pattern；
B () focuses this detector lens in this second layer, and correspond to the relative position of this flaw pattern to this in this second layer
Semiconductor element is scanned to obtain one second scan-image；And
C according to this second scan-image, () judges whether this semiconductor element has a flaw in this relative position.
2. flaw detection method according to claim 1 is it is characterised in that step (c) further includes：
When this relative position does not have this flaw pattern in this second scan-image, judge this semiconductor element in this relative position
Put and there is this flaw, and this flaw is a spot corrosion flaw.
3. flaw detection method according to claim 1 is it is characterised in that step (c) further includes：
When this relative position has this flaw pattern in this second scan-image, judge this semiconductor element in this relative position
There is this flaw, and this flaw is a surface blemish.
4. flaw detection method according to claim 1, should it is characterised in that this semiconductor element is a light emitting diode
Ground floor is an electrode layer, and this second layer is a substrate layer, and this flaw detection method further included a step before step (a)
(a0)：
(a0) this detector lens is focused towards this second layer.
5. a kind of flaw detection method of semiconductor element, this semiconductor element comprises a ground floor and a second layer, and it is special
Levy and be, the method comprises：
A () focuses detector lens in this ground floor, and this semiconductor element is scanned to obtain one first scanning shadow
Picture；
B () focuses this detector lens in this second layer, and this semiconductor element is scanned to obtain one second scanning shadow
Picture；And
C () compares a relative position in this first scan-image with this second scan-image for this semiconductor element, to judge
Whether this semiconductor element has a flaw in this relative position.
6. flaw detection method according to claim 5 is it is characterised in that step (c) further includes：
When this relative position has a flaw pattern in this first scan-image and does not have this flaw in this second scan-image
During pattern, judge that this semiconductor element has this flaw in this relative position, and this flaw is a spot corrosion flaw.
7. flaw detection method according to claim 5 is it is characterised in that step (c) further includes：
When this relative position all has a flaw pattern in this first scan-image and this second scan-image, judge that this is partly led
Volume elements part has this flaw in this relative position, and this flaw is a surface blemish.
8. flaw detection method according to claim 5, should it is characterised in that this semiconductor element is a light emitting diode
Ground floor is an electrode layer, and this second layer is a substrate layer, and this flaw detection method further included a step before step (a)
(a0)：
(a0) this detector lens is focused towards this second layer.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101506962A (en) * | 2007-03-06 | 2009-08-12 | 拓普康株式会社 | Surface inspecting method and device |
| CN101783306A (en) * | 2009-01-13 | 2010-07-21 | 联达科技设备私人有限公司 | System and method for inspecting a wafer |
| CN102253325A (en) * | 2010-05-21 | 2011-11-23 | 中芯国际集成电路制造(上海)有限公司 | Method for analyzing chip failure |
| CN102278941A (en) * | 2010-06-09 | 2011-12-14 | 思达科技股份有限公司 | Probing apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006184303A (en) * | 2004-12-24 | 2006-07-13 | Olympus Corp | Image inspecting device |
| US7986412B2 (en) * | 2008-06-03 | 2011-07-26 | Jzw Llc | Interferometric defect detection and classification |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101506962A (en) * | 2007-03-06 | 2009-08-12 | 拓普康株式会社 | Surface inspecting method and device |
| CN101783306A (en) * | 2009-01-13 | 2010-07-21 | 联达科技设备私人有限公司 | System and method for inspecting a wafer |
| CN102253325A (en) * | 2010-05-21 | 2011-11-23 | 中芯国际集成电路制造(上海)有限公司 | Method for analyzing chip failure |
| CN102278941A (en) * | 2010-06-09 | 2011-12-14 | 思达科技股份有限公司 | Probing apparatus |
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