CN104237133A - Determination method and determination device of normal emittance of pointed cone array plane black body - Google Patents
Determination method and determination device of normal emittance of pointed cone array plane black body Download PDFInfo
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- CN104237133A CN104237133A CN201410458190.1A CN201410458190A CN104237133A CN 104237133 A CN104237133 A CN 104237133A CN 201410458190 A CN201410458190 A CN 201410458190A CN 104237133 A CN104237133 A CN 104237133A
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Abstract
The invention discloses a determination method and a determination device of normal emittance of a pointed cone array plane black body. The method comprises the following steps: determining the degrees of cone angles of pointed cone at four sides in the pointed cone array of a plane black body, and the surface emittance of the pointed cones at four sides, computing the reflecting times of light ray irradiated in the pointed cone array along a normal direction of the plane black body in the pointed cone array; computing the absorption rate of the pointed cone array to the incident energy of the light ray according to the determined emittance and the computed reflecting times, using the computed absorption rate as an estimation value of the normal emittance of the plane black body. Thus, the normal emittance of the pointed cone array plane black body is estimated based on the degrees of the cone angles of the pointed cones at four sides and the surface emittance of the pointed cones at four sides. The design optimizing period can be shortened when the method is used for the design optimizing of the pointed cone array plane black body, the manpower cost and the material cost for designing and developing the pointed cone array black body are reduced.
Description
Technical field
The present invention relates to black matrix technology, particularly relate to a kind of determination method and apparatus of normal emittance of pointed cone array surface black matrix.
Background technology
Black matrix (black-body) refers to and all can absorb outside emittance, and can give off the object of self-energy according to Planck law, namely the absorptivity of black matrix is 1, and emissivity is 1 simultaneously.Black matrix can produce the Standard Ratio under uniform temperature, specifically has extensive use.In temperature measurement, black matrix can be used for examining and determine various radiation thermometer, as leucoscope, infrared thermometer, thermal infrared imager etc.; In optics, black matrix can be used as calibrated radiation source and normal background light source; In fields of measurement, black matrix can be used for measuring the spectral emissions of material, absorption and reflection characteristic; In study of high energy physics, black matrix can be used for producing neutron source.
The technical indicator weighing black matrix performance is exactly the emissivity of black matrix.The emissivity of black matrix is higher (more close to 1), and black matrix performance is more close to idealized.And technician often adopts the normal emittance of black matrix as the index characterizing black matrix performance.Usually the black matrix adopted at present is divided into two types: chamber black matrix and face black matrix.The emissivity of chamber black matrix is higher, is usually used in temperature measurement field; Face black matrix often swept area is comparatively large, is usually used in optical application.
In actual applications, chamber black matrix normally utilizes out foraminate cavity to form, and for chamber black matrix, existing theoretical analysis gives and calculates the rigorous computing formula (following formula 4) of its emissivity, therefore about chamber black matrix research and design also comparative maturity.Usually, black matrix designer, when carrying out chamber black matrix design, can carry out iterative computation repeatedly and analyze obtaining optimum design result for the several parameters affecting chamber black body emissivity.
ε=(1-ρ) { 1+ ρ [S
r-F (x, Ω)] } [1-ρ (1-S
r)] (formula 4)
Wherein, ε is the emissivity of chamber black matrix; ρ is the reflectivity of chamber wall; S
rbe the ratio of aperture and whole chamber wall area, F (x, Ω) is the angular factors of aperture.
For face black matrix, its emissivity depends on the coating material of face black matrix.But only rely on surface coating, the raising of the emissivity of face black matrix is limited, the design that therefore black matrix designer also carries out not coplanar type by opposite black matrix improves emissivity.Four sides sharp conical surface type is as shown in Figure 1 one of conventional face type of face black matrix; Wherein, the bottom surface of four sides pointed cone is square, and four conical surfaces are the isosceles triangle of congruence; A series of four sides pointed cone forms the pointed cone array of face black matrix.Be that the face black matrix of four sides pointed cone is referred to as pointed cone array surface black matrix in this article by face type.
But the emissivity of pointed cone array surface black matrix does not have rigorous theoretical calculation formula to calculate, the mode normally measured by test obtains the emissivity of pointed cone array surface black matrix.In prior art, for obtaining the pointed cone array surface black matrix meeting application demand, black matrix designer often needs the small sample first making pointed cone array surface black matrix, and the design parameter of emissivity to pointed cone array surface black matrix according to the small sample of test gained is optimized adjustment.But all need to measure the emissivity of pointed cone array surface black matrix, to be met the pointed cone array surface black matrix of application demand in the link such as Design and optimization, test of pointed cone array surface black matrix.Obviously, the mode all adopting making small sample then to obtain the emissivity of pointed cone array surface black matrix by the mode of test measurement in these links is unrealistic, the product design optimization cycle of pointed cone array surface black matrix can be caused longer, and the human and material resources cost of design and development is all higher.
For this reason, be necessary to provide a kind of defining method that can reduce the normal emittance of the pointed cone array surface black matrix of the human and material resources cost of design and development.
Summary of the invention
For the defect that above-mentioned prior art exists, the invention provides a kind of determination method and apparatus of normal emittance of pointed cone array surface black matrix, in order to reduce the human and material resources cost of pointed cone array surface black matrix design and development.
According to an aspect of the present invention, provide a kind of defining method of normal emittance of pointed cone array surface black matrix, comprising:
Determine the emissivity on the angle of taper of the four sides pointed cone of appearing in the pointed cone array of black matrix and the surface of described four sides pointed cone;
According to the angle of taper determined, calculate the order of reflection in described pointed cone array along the normal incidence of described black matrix to the light in described pointed cone array;
Described pointed cone array is calculated to the absorptivity of the projectile energy of described light, using the absorptivity that the calculates estimated value as the normal emittance of described black matrix according to the emissivity determined and the order of reflection calculated.
Preferably, the angle of taper that described basis is determined, calculates the order of reflection in described pointed cone array along the normal incidence of described black matrix to the light in described pointed cone array, specifically comprises:
Described order of reflection n is calculated according to following formula 1:
N=TRUNC (180 °/θ) (formula 1)
Wherein, θ is described angle of taper; TRUNC (180 °/θ) expression rounds 180 °/θ.
Preferably, the emissivity that described basis is determined and the order of reflection calculated calculate described pointed cone array to the absorptivity of the projectile energy of described light, specifically comprise:
Described absorptivity α is calculated according to following formula 2:
α=1-(1-ε
0)
n(formula 2)
Wherein, n is described order of reflection; ε
0for the emissivity on the surface of described four sides pointed cone.
Further, described using the absorptivity that calculates as the normal emittance of described pointed cone array surface black matrix estimated value after, also comprise:
The design load of the normal emittance of described estimated value and described black matrix is compared, adjustment is optimized according to the emissivity of comparative result to the surface of the angle of taper of described four sides pointed cone and/or described four sides pointed cone, and the emissivity on surface according to the angle of taper of four sides pointed cone after optimizing and revising and/or the four sides pointed cone after optimizing and revising, the estimated value of the normal emittance of the face black matrix after calculation optimization adjustment.
Preferably, be describedly optimized adjustment according to the emissivity of comparative result to the surface of the angle of taper of described four sides pointed cone and described four sides pointed cone, specifically comprise:
If described comparative result is described estimated value be less than described design load, then the angle of taper of described four sides pointed cone is reduced the set angle angle value angle of taper as the four sides pointed cone after optimizing and revising, and/or the emissivity on the surface of described four sides pointed cone is increased the emissivity of setting numerical value as the surface of the four sides pointed cone after optimizing and revising.
According to another aspect of the present invention, additionally provide a kind of determining device of normal emittance of pointed cone array surface black matrix, comprising:
Parameter determination unit, for the emissivity on the surface of the angle of taper and described four sides pointed cone of determining the four sides pointed cone of appearing in the pointed cone array of black matrix;
Order of reflection computing unit, for the angle of taper determined according to described parameter determination unit, calculates the order of reflection in described pointed cone array along the normal incidence of described black matrix to the light in described pointed cone array;
Normal emittance evaluation unit, for the order of reflection that the emissivity determined according to described parameter determination unit and described order of reflection computing unit calculate, calculate described pointed cone array to the absorptivity of the projectile energy of described light, using the absorptivity that the calculates estimated value as the normal emittance of described black matrix.
Preferably, described order of reflection computing unit is specifically for calculating described order of reflection n according to following formula 1:
N=TRUNC (180 °/θ) (formula 1)
Wherein, θ is described angle of taper; TRUNC (180 °/θ) expression rounds 180 °/θ.
Preferably, described normal emittance evaluation unit is specifically for calculating described absorptivity α according to following formula 2:
α=1-(1-ε
0)
n(formula 2)
Wherein, ε
0for the emissivity on the surface of described four sides pointed cone.
Further, the determining device of the normal emittance of above-mentioned pointed cone array surface black matrix also comprises:
Optimize and revise unit, design load for the normal emittance of the estimated value determined by described normal emittance evaluation unit and described black matrix compares, according to comparative result, adjustment is optimized to the angle of taper of the four sides pointed cone that described parameter determination unit is determined and the emissivity on the surface of four sides pointed cone, and the emissivity on surface according to the angle of taper of four sides pointed cone after optimizing and revising and/or the four sides pointed cone after optimizing and revising, the estimated value of the normal emittance of the face black matrix after calculation optimization adjustment.
Preferably, if unit is optimized and revised specifically for determining that described comparative result is that described estimated value is less than described design load described, the angle of taper of the four sides pointed cone then determined by described parameter determination unit reduces set angle angle value, as the angle of taper of the four sides pointed cone after optimizing and revising; And/or the emissivity on the surface of the four sides pointed cone to be determined by described parameter determination unit reduces setting numerical value, as the emissivity on the surface of the four sides pointed cone after optimizing and revising.
In technical scheme of the present invention, due to can according to the emissivity on surface of the angle of taper of the four sides pointed cone determined and four sides pointed cone, and based on the emitting times of light under the condition of normal incidence face black matrix in the pointed cone array of face black matrix, estimate the normal emittance of pointed cone array surface black matrix, thus when carrying out the optimal design of pointed cone array surface black matrix, by estimating of the normal emittance to pointed cone array surface black matrix, to the design parameter of the pointed cone array surface black matrix designed in advance, as the angle of taper of four sides pointed cone and the emissivity on the surface of four sides pointed cone, repeatedly optimize and revise, thus avoid the operation making small sample and test measurement normal emittance in the design optimization process of pointed cone array surface black matrix, substantially reduce the design optimization cycle, and can manpower be greatly reduced, material resources cost.And, for Manufactured pointed cone array surface black matrix product, also carry out the quick estimation of the normal emittance of pointed cone array surface black matrix by method of the present invention.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the four sides pointed cone in pointed cone array surface black matrix;
Fig. 2 is the schematic flow sheet of the defining method of the normal emittance of the pointed cone array surface black matrix of the embodiment of the present invention;
Fig. 3, Fig. 4 are the reflection case schematic diagram of light in pointed cone array of the embodiment of the present invention;
Fig. 5 is the inner structure block diagram of the determining device of the normal emittance of the pointed cone array surface black matrix of the embodiment of the present invention.
Embodiment
For making object of the present invention, technical scheme and advantage clearly understand, enumerate preferred embodiment referring to accompanying drawing, the present invention is described in more detail.But it should be noted that, the many details listed in instructions are only used to make reader to have a thorough understanding, even if do not have these specific details also can realize these aspects of the present invention to one or more aspect of the present invention.
The present inventor considers, based on the basic law of geometrical optics, can set up the propagation model of light (infrared radiation) in the pointed cone array of pointed cone array surface black matrix, light, under the condition of normal incidence pointed cone array surface black matrix, can cause energy attenuation because of multiple reflections, therefore, pointed cone array surface black matrix can be obtained to the absorptivity of the projectile energy of light according to the energy attenuation of light, and then in conjunction with Kirchhoff's law, the estimated value of the normal emittance of pointed cone array surface black matrix can be obtained, thus when carrying out the optimal design of pointed cone array surface black matrix, by estimating of the normal emittance to pointed cone array surface black matrix, to the design parameter of the pointed cone array surface black matrix designed in advance, as the angle of taper of four sides pointed cone and the emissivity on the surface of four sides pointed cone, repeatedly optimize and revise, thus avoid the operation making small sample and test measurement normal emittance in the design optimization process of pointed cone array surface black matrix, substantially reduce the design optimization cycle, and can manpower be greatly reduced, material resources cost.
Technical scheme of the present invention is described in detail below in conjunction with accompanying drawing.The schematic flow sheet of the defining method of the normal emittance of the pointed cone array surface black matrix that the embodiment of the present invention provides, as shown in Figure 2, specifically comprises the steps:
S101: the emissivity determining the angle of taper of the four sides pointed cone in the pointed cone array of face black matrix (i.e. pointed cone array surface black matrix) and the surface of four sides pointed cone.
Particularly, the emissivity on the angle of taper of the four sides pointed cone in the pointed cone array of face black matrix (i.e. pointed cone array surface black matrix) and the surface of four sides pointed cone can be obtained by detection; Or, obtain by obtaining the design parameter of face black matrix; In fact, black matrix designer, when carrying out the design of pointed cone array surface black matrix, can pre-determine the design parameter of face black matrix, comprises the emissivity on the angle of taper of the four sides pointed cone in the pointed cone array of face black matrix and the surface of four sides pointed cone.Or, technician, when the measurement of normal emittance carrying out Manufactured pointed cone array surface black matrix product, determines the emissivity for the angle of taper of the four sides pointed cone in the pointed cone array of the pointed cone array surface black matrix of product and the surface of four sides pointed cone by measurement.
Wherein, the angle of taper of four sides pointed cone refer to relative two isosceles triangles in the pointed cone of four sides base center line between the angle of angle; The emissivity on the surface of four sides pointed cone is relevant with the material of the surface coating of four sides pointed cone.
S102: according to the angle of taper determined, calculates normal incidence along face black matrix to the order of reflection of light in pointed cone array in the pointed cone array of face black matrix.
Particularly, suppose four sides pointed cone smooth surface, light is when four sides pointed cone surface reflection in accordance with mirror-reflection rule, and four sides pointed cone coating material does not have transmission for the projectile energy of light.Like this, when in light is along the normal incidence of pointed cone array surface black matrix to the pointed cone array of pointed cone array surface black matrix, the rectilinear propagation principle based on light is followed the trail of the reflection of light in pointed cone array.Such as, Fig. 3 shows the reflection case schematic diagram of light in pointed cone array when the angle of taper of four sides pointed cone is less than 90 degree; Fig. 4 shows the reflection case schematic diagram of light in pointed cone array when the angle of taper of four sides pointed cone is 90 degree.
When in light is along the normal incidence of pointed cone array surface black matrix to the pointed cone array of pointed cone array surface black matrix, can based on the reflection case of light in pointed cone array, according to the angle of taper of the four sides pointed cone in pointed cone array, calculate the order of reflection of light in pointed cone array.Particularly, can according to following formula 1 computational reflect frequency n:
N=TRUNC (180 °/θ) (formula 1)
Wherein, θ is the angle of taper of four sides pointed cone; TRUNC (180 °/θ) expression rounds 180 °/θ.
As seen from Figure 4, when θ=90 °, order of reflection n=TRUNC (180 °/90 °)=2.
S103: calculate the pointed cone array of face black matrix to the absorptivity of the projectile energy of light according to the emissivity determined and the order of reflection calculated, using the absorptivity that the calculates estimated value as the normal emittance of face black matrix (i.e. pointed cone array surface black matrix).
Particularly, if the order of reflection of light in pointed cone array is n, when light is along normal incidence to pointed cone array surface black matrix, energy remaining when it is finally escaped and the number percent of projectile energy are the n powers of the reflectivity on pointed cone surface, four sides.According to law of conservation of energy, the absorptivity α of pointed cone array to the projectile energy of light can be calculated according to following formula 3:
Wherein, n is order of reflection; ρ
0for the reflectivity on the surface of four sides pointed cone.
Under the opaque prerequisite of wave band that the surface of four sides pointed cone is concerned about black matrix designer, ρ
0=1-ε
0, ε
0for the emissivity on the surface of four sides pointed cone; Therefore, above-mentioned formula 3 can be exchanged into following formula 2, like this, can calculate the absorptivity α of pointed cone array to the projectile energy of light according to following formula 2:
α=1-(1-ε
0)
n(formula 2)
According to Kirchhoff's law, emissivity equals absorptivity, therefore can using the pointed cone array that calculates to the estimated value of the absorptivity of the projectile energy of light as the normal emittance of pointed cone array surface black matrix, that is:
Wherein, the number percent of remaining energy and projectile energy when ρ represents final escape.
Such as, if the angle of taper of the four sides pointed cone determined is θ=60 °, the emissivity on the surface of four sides pointed cone is ε
0=0.8, then can calculate order of reflection n=180 °/60 °=3, the estimated value of the normal emittance of pointed cone array surface black matrix is: ε=1-(1-0.8)
3=0.992.
The estimation of the normal emittance to pointed cone array surface black matrix can be realized by step S101 ~ S103, not only can be used for the product design optimization of pointed cone array surface black matrix, also can determine fast the normal emittance of the pointed cone array surface black matrix product made.
Further, when situations such as the design optimizations carrying out pointed cone array surface black matrix, black matrix designer is when carrying out the design of pointed cone array surface black matrix, usually can set the design load of the normal emittance of the pointed cone array surface black matrix meeting application demand, and pre-determine out the emissivity on the angle of taper of four sides pointed cone and the surface of four sides pointed cone, like this, in the emissivity on the surface according to the angle of taper and four sides pointed cone that pre-determine out four sides pointed cone, after determining or estimate the estimated value of the normal emittance of pointed cone array surface black matrix, also the design load of the normal emittance of the estimated value of the normal emittance of pointed cone array surface black matrix and face black matrix can be compared, and be optimized adjustment according to the emissivity on surface of comparative result to the angle of taper of the four sides pointed cone determined and/or four sides pointed cone, and then the emissivity on surface according to the angle of taper of four sides pointed cone after optimizing and revising and/or the four sides pointed cone after optimizing and revising, the estimated value of the normal emittance of the face black matrix after calculation optimization adjustment.Particularly, being optimized adjustment according to the emissivity on surface of comparative result to the angle of taper of the four sides pointed cone determined and/or four sides pointed cone can be: if the estimated value that comparative result is the normal emittance of pointed cone array surface black matrix is less than the design load of the normal emittance of pointed cone array surface black matrix, then the angle of taper of the four sides pointed cone pre-determined out can be reduced set angle angle value, as the angle of taper of the four sides pointed cone after optimizing and revising, and/or the emissivity on the pointed cone surface, four sides pre-determined out is increased setting numerical value, as the emissivity on the pointed cone surface, four sides after optimizing and revising.Wherein, to the adjustment of the emissivity on pointed cone surface, four sides namely to the adjustment of the material of four sides pointed cone surface coating.If obtaining comparative result is the design load that the estimated value of the normal emittance of pointed cone array surface black matrix is more than or equal to the normal emittance of pointed cone array surface black matrix, then can directly by the emissivity with the angle of taper of predetermined four sides pointed cone and the surface of predetermined four sides pointed cone, be defined as finally making the design parameter value that pointed cone array surface black matrix product uses.
In fact, after the estimated value of the normal emittance of the face black matrix after calculation optimization adjustment, also can according to the comparative result of this estimated value and described design load, the emissivity on the surface of the angle of taper of four sides pointed cone after optimizing and revising and/or the four sides pointed cone after optimizing and revising is optimized and revised again.Like this, through repeatedly optimizing and revising, the design parameter value of application demand finally can be met for black matrix designer reference.
Based on the defining method of the normal emittance of above-mentioned pointed cone array surface black matrix, the inner structure block diagram of the determining device of the normal emittance of the pointed cone array surface black matrix of the embodiment of the present invention as shown in Figure 5, specifically comprises: parameter determination unit 501, order of reflection computing unit 502, normal emittance evaluation unit 503.
Parameter determination unit 501 is for the emissivity on surface of the angle of taper and four sides pointed cone of determining the four sides pointed cone of appearing in the pointed cone array of black matrix.
The angle of taper of order of reflection computing unit 502 for determining according to parameter determination unit 501, calculates the order of reflection in pointed cone array along the normal incidence of face black matrix to the light in pointed cone array.Particularly, order of reflection computing unit 502 calculates order of reflection n along the normal incidence of face black matrix to the light in pointed cone array in pointed cone array according to following formula 1:
N=TRUNC (180 °/θ) (formula 1)
Wherein, θ is the angle of taper of four sides pointed cone; TRUNC (180 °/θ) expression rounds 180 °/θ.
The order of reflection that normal emittance evaluation unit 503 calculates for the emissivity determined according to parameter determination unit 501 and order of reflection computing unit 502, calculate pointed cone array to the absorptivity of the projectile energy of light, using the absorptivity that the calculates estimated value as the normal emittance of described black matrix.Particularly, normal emittance evaluation unit 503 calculates the absorptivity α of pointed cone array to the projectile energy of light according to following formula 2:
α=1-(1-ε
0)
n(formula 2)
Wherein, ε
0for the emissivity on the surface of four sides pointed cone.
Further, the determining device of the normal emittance of above-mentioned pointed cone array surface black matrix also can comprise: optimize and revise unit 504.
Optimize and revise unit 504 to compare for the design load of the normal emittance of estimated value that normal emittance evaluation unit 503 is determined and predetermined black matrix, according to comparative result, adjustment is optimized to the angle of taper of the four sides pointed cone that parameter determination unit 501 is determined and the emissivity on the surface of four sides pointed cone, and the emissivity on surface according to the angle of taper of four sides pointed cone after optimizing and revising and/or the four sides pointed cone after optimizing and revising, the estimated value of the normal emittance of the face black matrix after calculation optimization adjustment.Wherein, if optimize and revise unit 504 to determine that comparative result is that the estimated value that normal emittance evaluation unit 503 is determined is less than described design load, the angle of taper of the four sides pointed cone then determined by parameter determination unit 501 reduces set angle angle value, as the angle of taper of the four sides pointed cone after optimizing and revising; And/or the emissivity on the surface of the four sides pointed cone to be determined by parameter determination unit 501 reduces setting numerical value, as the emissivity on the surface of the four sides pointed cone after optimizing and revising; Otherwise, adjustment is not optimized to the emissivity on the angle of taper of the four sides pointed cone that parameter determination unit 501 is determined and the surface of four sides pointed cone.
In technical scheme of the present invention, due to can according to the emissivity on surface of the angle of taper of the four sides pointed cone determined and four sides pointed cone, and based on the emitting times of optical fiber under the condition of launching plane of incidence black matrix in the pointed cone array of face black matrix, estimate the normal emittance of pointed cone array surface black matrix, thus when carrying out the optimal design of pointed cone array surface black matrix, by estimating of the normal emittance to pointed cone array surface black matrix, to the design parameter of the pointed cone array surface black matrix designed in advance, as the angle of taper of four sides pointed cone and the emissivity on the surface of four sides pointed cone, repeatedly optimize and revise, thus avoid the operation making small sample and test measurement normal emittance in the design optimization process of pointed cone array surface black matrix, substantially reduce the design optimization cycle, and can manpower be greatly reduced, material resources cost.And, for Manufactured pointed cone array surface black matrix product, also carry out the quick estimation of the normal emittance of pointed cone array surface black matrix by method of the present invention.
One of ordinary skill in the art will appreciate that all or part of step realized in above-described embodiment method is that the hardware that can carry out instruction relevant by program has come, this program can be stored in a computer read/write memory medium, as: ROM/RAM, magnetic disc, CD etc.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. a defining method for the normal emittance of pointed cone array surface black matrix, is characterized in that, comprising:
Determine the emissivity on the angle of taper of the four sides pointed cone of appearing in the pointed cone array of black matrix and the surface of described four sides pointed cone;
According to the angle of taper determined, calculate the order of reflection in described pointed cone array along the normal incidence of described black matrix to the light in described pointed cone array;
Described pointed cone array is calculated to the absorptivity of the projectile energy of described light, using the absorptivity that the calculates estimated value as the normal emittance of described black matrix according to the emissivity determined and the order of reflection calculated.
2. the method for claim 1, is characterized in that, the angle of taper that described basis is determined, calculates the order of reflection in described pointed cone array along the normal incidence of described black matrix to the light in described pointed cone array, specifically comprises:
Described order of reflection n is calculated according to following formula 1:
N=TRUNC (180 °/θ) (formula 1)
Wherein, θ is described angle of taper; TRUNC (180 °/θ) expression rounds 180 °/θ.
3. method as claimed in claim 1 or 2, it is characterized in that, the emissivity that described basis is determined and the order of reflection calculated calculate described pointed cone array to the absorptivity of the projectile energy of described light, specifically comprise:
Described absorptivity α is calculated according to following formula 2:
α=1-(1-ε
0)
n(formula 2)
Wherein, n is described order of reflection; ε
0for the emissivity on the surface of described four sides pointed cone.
4. method as claimed in claim 3, is characterized in that, described using the absorptivity that calculates as the normal emittance of described pointed cone array surface black matrix estimated value after, also comprise:
The design load of the normal emittance of described estimated value and described black matrix is compared, adjustment is optimized according to the emissivity of comparative result to the surface of the angle of taper of described four sides pointed cone and/or described four sides pointed cone, and the emissivity on surface according to the angle of taper of four sides pointed cone after optimizing and revising and/or the four sides pointed cone after optimizing and revising, the estimated value of the normal emittance of the face black matrix after calculation optimization adjustment.
5. method as claimed in claim 4, is characterized in that, is describedly optimized adjustment according to the emissivity of comparative result to the surface of the angle of taper of described four sides pointed cone and described four sides pointed cone, specifically comprises:
If described comparative result is described estimated value be less than described design load, then the angle of taper of described four sides pointed cone is reduced the set angle angle value angle of taper as the four sides pointed cone after optimizing and revising, and/or the emissivity on the surface of described four sides pointed cone is increased the emissivity of setting numerical value as the surface of the four sides pointed cone after optimizing and revising.
6. a determining device for the normal emittance of pointed cone array surface black matrix, is characterized in that, comprising:
Parameter determination unit, for the emissivity on the surface of the angle of taper and described four sides pointed cone of determining the four sides pointed cone of appearing in the pointed cone array of black matrix;
Order of reflection computing unit, for the angle of taper determined according to described parameter determination unit, calculates the order of reflection in described pointed cone array along the normal incidence of described black matrix to the light in described pointed cone array;
Normal emittance evaluation unit, for the order of reflection that the emissivity determined according to described parameter determination unit and described order of reflection computing unit calculate, calculate described pointed cone array to the absorptivity of the projectile energy of described light, using the absorptivity that the calculates estimated value as the normal emittance of described black matrix.
7. device as claimed in claim 6, is characterized in that,
Described order of reflection computing unit is specifically for calculating described order of reflection n according to following formula 1:
N=TRUNC (180 °/θ) (formula 1)
Wherein, θ is described angle of taper; TRUNC (180 °/θ) expression rounds 180 °/θ.
8. device as claimed in claims 6 or 7, is characterized in that,
Described normal emittance evaluation unit is specifically for calculating described absorptivity α according to following formula 2:
α=1-(1-ε
0)
n(formula 2)
Wherein, ε
0for the emissivity on the surface of described four sides pointed cone.
9. device as claimed in claim 7 or 8, is characterized in that, also comprise:
Optimize and revise unit, design load for the normal emittance of the estimated value determined by described normal emittance evaluation unit and described black matrix compares, according to comparative result, adjustment is optimized to the angle of taper of the four sides pointed cone that described parameter determination unit is determined and the emissivity on the surface of four sides pointed cone, and the emissivity on surface according to the angle of taper of four sides pointed cone after optimizing and revising and/or the four sides pointed cone after optimizing and revising, the estimated value of the normal emittance of the face black matrix after calculation optimization adjustment.
10. device as claimed in claim 9, is characterized in that,
If unit is optimized and revised specifically for determining that described comparative result is that described estimated value is less than described design load described, the angle of taper of the four sides pointed cone then determined by described parameter determination unit reduces set angle angle value, as the angle of taper of the four sides pointed cone after optimizing and revising; And/or the emissivity on the surface of the four sides pointed cone to be determined by described parameter determination unit reduces setting numerical value, as the emissivity on the surface of the four sides pointed cone after optimizing and revising.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104913849A (en) * | 2015-03-27 | 2015-09-16 | 中国计量科学研究院 | Surface source black body and manufacturing method thereof |
| CN113916385A (en) * | 2021-10-11 | 2022-01-11 | 东北林业大学 | Surface source blackbody emissivity calibration method based on multiple reflection method |
| CN117268561A (en) * | 2023-11-20 | 2023-12-22 | 电子科技大学 | Hollow pointed cone blackbody calibration source with low-reflectivity non-uniform wave-absorbing coating |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202947796U (en) * | 2012-08-30 | 2013-05-22 | 中国计量学院 | Three-cavity black-body radiation source for emissivity measurement |
| CN103528963A (en) * | 2013-11-01 | 2014-01-22 | 哈尔滨工业大学 | Method for measuring semitransparent material radiation characteristics by adoption of multi-frequency modulation laser heating and photo-thermal information reconstruction technology |
-
2014
- 2014-09-10 CN CN201410458190.1A patent/CN104237133A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202947796U (en) * | 2012-08-30 | 2013-05-22 | 中国计量学院 | Three-cavity black-body radiation source for emissivity measurement |
| CN103528963A (en) * | 2013-11-01 | 2014-01-22 | 哈尔滨工业大学 | Method for measuring semitransparent material radiation characteristics by adoption of multi-frequency modulation laser heating and photo-thermal information reconstruction technology |
Non-Patent Citations (6)
| Title |
|---|
| A. BENSAOULA ET AL: "Arrays of 3D micro-columns generated by laser ablation of Ta and steel:modelling of a black body emitter", 《APPL. PHYS. A》 * |
| FREDERICK 0. BARTELL: "THE SYMBIOTIC RELATIONSHIP BETWEEN INFRARED IMAGING ARRAYS AND A NEW TYPE OF BLACKBODY SIMULATOR", 《PROCEEDINGS OF SPIE-STATE -OF- THE -ART IMAGING ARRAYS AND THEIR APPLICATION》 * |
| 孙富韬等: "不等温空腔的有效发射率计算", 《宇航计测技术》 * |
| 徐赛锋: "高温黑体辐射源研究与设计", 《万方学术论文数据库》 * |
| 方茜茜等: "蒙特-卡罗法计算黑体空腔有效发射率", 《中国光学》 * |
| 金铭等: "阵列型微波黑体的发射率分析", 《物理学报》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104913849A (en) * | 2015-03-27 | 2015-09-16 | 中国计量科学研究院 | Surface source black body and manufacturing method thereof |
| CN104913849B (en) * | 2015-03-27 | 2019-04-09 | 中国计量科学研究院 | A kind of face source black matrix and preparation method thereof |
| CN113916385A (en) * | 2021-10-11 | 2022-01-11 | 东北林业大学 | Surface source blackbody emissivity calibration method based on multiple reflection method |
| CN117268561A (en) * | 2023-11-20 | 2023-12-22 | 电子科技大学 | Hollow pointed cone blackbody calibration source with low-reflectivity non-uniform wave-absorbing coating |
| CN117268561B (en) * | 2023-11-20 | 2024-02-09 | 电子科技大学 | Hollow pointed cone blackbody calibration source with low-reflectivity non-uniform wave-absorbing coating |
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