CN104232960B - A kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material - Google Patents
A kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 62
- 230000005619 thermoelectricity Effects 0.000 title claims abstract description 39
- 229910008355 Si-Sn Inorganic materials 0.000 title claims description 34
- 229910006453 Si—Sn Inorganic materials 0.000 title claims description 34
- 239000000843 powder Substances 0.000 claims abstract description 45
- 238000005245 sintering Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 23
- 210000002381 Plasma Anatomy 0.000 claims abstract description 19
- 238000007599 discharging Methods 0.000 claims abstract description 17
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- 229910019752 Mg2Si Inorganic materials 0.000 claims abstract description 10
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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Abstract
The present invention relates to a kind of quick controlled method preparing Mg Si Sn base thermoelectricity material, comprise the steps of 1) dispensing tabletting: under inert gas shielding, by chemical formula Mg2(1+z)Si1‑xSnxSbyIn (0≤z≤0.12,0≤x≤1.0,0≤y≤0.025), the stoichiometric proportion of each element weighs Mg powder, Mg2Si powder, Sn powder and Sb powder are pressed into block as raw material, mix homogeneously；2), after gained block vacuum seals, it is heated to 823 833K, is incubated 5 10min, furnace cooling；3) step 2) products therefrom is ground into powder under inert gas shielding, and carry out plasma discharging activated sintering, i.e. can get high performance Mg Si Sn base thermoelectricity material.The present invention has the features such as technique is simple, energy consumption is low, manufacturing cycle is short, block materials thermoelectricity capability reproducible, that obtain is excellent.
Description
Technical field
The invention belongs to new energy materials field, be specifically related to a kind of quick controlled Mg-Si-Sn base thermoelectricity material prepared
Method.
Background technology
Energy problem is the major issue concerning human social development.Recently as coal, oil, natural gas etc.
The minimizing day by day of fossil fuel reserves, and greenhouse effect, dust pollution, the environmental problem such as acid rain thus brought are the tightest
Weight, the exploitation of environmentally friendly type new forms of energy has become a common recognition of various countries scientific research personnel.New energy technology is wanted by people
Ask mainly have following some: (1) energy source extensively and has recyclability；(2) environmentally friendly；(3) equipment is simple and makes
With convenient；(4) with low cost.The representative of these new forms of energy has solar energy, water energy, wind energy, a tide energy etc., but these new forms of energy skills
Art is very big to the degree of dependence of environmental condition, and range of application is the narrowest.Therefore people are highly desirable finds a kind of convenient height
Effect, the less clean energy resource of range of application restriction simultaneously replaces traditional fossil energy.
Pyroelectric technology is a kind of can be directly realized by the new technique that heat energy and electric energy are mutually changed, with traditional air-conditioning or interior
Unlike combustion engine, the conversion of its energy depends on the motion of inside of solid material carrier (electronics or hole) rather than coolant
Compression/expansion or the burning of Fossil fuel.Its heat energy source extensively (such as residual heat of tail gas of automobile, boiler used heat, solar energy
Deng), environmentally safe during use, equipment is simple and easy to operate, thus is considered as 21 century by people and most applies
One of new energy technology of prospect.The energy conversion efficiency of thermo-electric device depends primarily on the dimensionless figure of merit zT=α of material2σ
T/ κ, wherein, α is Seebeck coefficient, and σ is electrical conductivity, and κ is thermal conductivity, and T is absolute temperature.At present, commercial field uses
The zT value of thermoelectric material only about 1.0, substantially less than expected value 2.0.Therefore, the thermoelectric material preparing high zT value just becomes heat
One important topic of electrical domain.
Mg-Si-Sn base thermoelectricity material is to be paid close attention to a more class thermoelectric material by people in recent years, and it is by Mg2Si and
Mg2The solid solution that Sn is formed.Mg2Si has higher Seebeck coefficient and a relatively low electrical conductivity, and Mg2Sn has relatively low
Seebeck coefficient and higher electrical conductivity, but the two solid solution (Mg formed2Si1-xSnx) lattice thermal conductivity be but far below
Mg2Si and Mg2Sn, therefore, the research to Mg-Si-Sn thermoelectric material has the highest using value.With conventional thermoelectric materials phase
Ratio, it has the advantage that one, component wide material sources (Mg, Si and the Sn reserves in the earth's crust are the abundantest)；Two,
Component is nontoxic, will not damage human body, also not pollute the environment, and meets the environment protection requirement of China；Three, raw material
Cheap, preparation technology is simple, has extraordinary commercial application prospect.
At present, Mg2Si1-xSnxThe preparation of compound mainly uses fusion method, mechanical alloying method, vacuum induction melting,
B2O3Flux growth metrhod, tantalum pipe package method, the technique such as two single-step solid phase reactions (873K reaction 24h+973K react to 24h).But due to Si's
Fusing point is up to 1687K, and therefore fusion method is high to the requirement of equipment, and this preparation technology cannot solve due to Mg Yu Si Gao Rong
The point Mg vaporization at high temperature loss that brought of difference and Mg is the most oxidizable or with the problem such as container reaction；And mechanical alloy
Change rule and there is the drawback being easily mixed into impurity and oxidation, and Mg easily sticks to abrading-ball surface and ball grinder inwall, causes reality
Border composition deviation name stoichiometric proportion, thus be difficult to prepare purer Mg2Si1-xSnxCompound；Vacuum induction melting is to setting
High for requiring, and the problem being difficult to solve component segregation；Use B2O3Although flux growth metrhod can utilize fluid-tight to reduce sample
With contacting of air, but due to Mg and B2O3Can react that (magnesium reduction process prepares boron powder: 3Mg+B2O3→ 3MgO+2B), thus
Cause Mg-Si-Sn sample is mixed into MgO；There is the problems such as cost height, complex process in the encapsulation of tantalum pipe；Two single-step solid phase reactions are then deposited
Very long at manufacturing cycle, the shortcoming such as poor repeatability.Therefore new quick controlled preparation process is explored for Mg2Si1-xSnxBase heat
The business application of electric material is extremely important.
Summary of the invention
The technical problem to be solved is the deficiency existed for above-mentioned prior art and provides one quickly may be used
The method controlling standby Mg-Si-Sn base thermoelectricity material, the method has that technique is simple, with low cost, manufacturing cycle is short, repeated
The advantage such as good.
The present invention solves that the technical scheme that problem set forth above is used is:
A kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material, comprises the steps of
1) dispensing tabletting: under inert gas shielding, by chemical formula Mg2(1+z)Si1-xSnxSby(0≤z≤0.12,0≤x≤
1.0,0≤y≤0.025) in the stoichiometric proportion of each element weigh Mg powder, Mg2Si powder, Sn powder and Sb powder are as raw material, then
Mix homogeneously is pressed into block；
2) single-step solid phase reaction: by step 1) gained block vacuum seal after, be heated to 823-with certain heating rate
833K, is incubated 5-10min, then cools to room temperature with the furnace；
3) plasma discharging activated sintering: by step 2) products therefrom is ground into powder under inert gas shielding, then fills
Enter in graphite jig, carry out plasma discharging activated sintering, i.e. can get high-performance Mg-Si-Sn base thermoelectricity material.
By such scheme, described raw material Mg powder, Mg2Si powder, Sn powder, the purity of Sb powder are not less than 98%.
By such scheme, the technique of described compacting is: first pressurize 5min under 4MPa pressure, then protects under 6MPa pressure
Pressure 10min.
By such scheme, described step 2) in heating rate be 10-20K/min.
By such scheme, described step 3) plasma discharging activated sintering technique is: furnace chamber vacuum less than 10Pa with
And under the conditions of sample two ends pressure is 35MPa, is heated to 930K with the heating rate of 100K/min and is incubated 5-10min.
The present invention i.e. can get high-performance Mg-Si-Sn base thermoelectricity material in 2h, compared to works such as two step solid phase methods
Skill is greatly shortened material manufacturing cycle, and when the chemical composition of material is Mg2.24(Si0.3Sn0.7)0.98Sb0.02Time 750K heat
Electricity figure of merit zT up to～1.28.
Solid state reaction: refer to all chemical reactions comprising solid matter participation, including solid-solid phase reaction, solid-gas phase reaction
With solid-liquid phase reaction etc., reaction mechanism is mainly: (1) reactant transition process evaporates-condenses, dissolves-be deposited to boundary
On；(2) chemical reaction occurring on boundary, heat and mass makes reaction substantially carry out on boundary；(3) reactant is by producing
The diffusion of nitride layer, reactant reaches certain thickness, and being reacted to further must the reactant diffusion by product layer.Self-propagating is high
Temperature synthesis is the most relevant with combustion wave temperature, i.e. more than temperature arrival critical temperature SHS process, patent can occur
CN103165809A utilizes the ignite reaction of Cu powder and Se powder of coal gas flame to prepare Cu2Se is typical self-propagating reaction.Thermal explosion
Synthesis is that (SHS technology includes self-propagating and thermal explosion two kinds reaction mould to the one in SHS technology
Formula), except for the difference that, it needs reaction system is heated to a certain temperature ability initiation reaction system integral combustion, now reacts
System each several part reacts simultaneously, not can be appreciated that obvious combustion wave, the most common Al-Ti-C intermediate alloy i.e. use heat
Quick-fried synthesis.
Sum it up, SHS process is all only relevant with reaction temperature with thermal explosion synthesis, and fast with the intensification of body of heater
Rate is unrelated, and SHS process does not use body of heater to heat, the most sharp after only being reacted by the certain way system of igniting
Reaction is completed with liberated heat in system course of reaction；Body of heater is then typically first heated to a certain temperature, then by thermal explosion synthesis
Reactant is put in burner hearth the insulation some time again.And the mechanism of the application is that (reaction temperature is by a single-step solid phase reaction
823 833K) Fast back-projection algorithm Mg2Sn is (i.e. with the Mg granule (fusing point is 923K) of solid-state in phase boundary after Sn (fusing point is 505K) fusing
React on face, obtain Mg2Sn), volatilization and the oxidation of Mg is effectively reduced, then in conjunction with plasma discharging activated sintering technology
Realize Mg in a short period of time2Si and Mg2The solid solution of Sn, and obtain the Mg-Si-Sn base block thermoelectric material of densification, Er Qiesheng
Preparation Mg-Si-Sn base thermoelectricity material is had a major impact by temperature speed.
Conventional preparation techniques (such as two single-step solid phase reactions) is main before sintering to be used at various complexity and long-term heat
Science and engineering skill completes Mg2Sn and Mg2The solid solution of Si, thus obtain single-phase Mg-Si-Sn base thermoelectricity material, its sintering process pertains only to
Densification process, and there is no solid solution process (this process completes the most before sintering).The present invention is in a single-step solid phase reaction
Arrive Mg2Sn, and and it is not fully complete Mg2Sn and Mg2The solid solution of Si, then utilize plasma discharging activated sintering to be rapidly heated,
The feature of Quick-pressing realizes Mg simultaneously2Si and Mg2The solid solution of Sn and the densification process of sample.
Compared with prior art, the invention has the beneficial effects as follows:
The present invention uses a single-step solid phase reaction to combine, and plasma discharging activated sintering technology is the most controlled is prepared for Mg-Si-
Sn base thermoelectricity material, more traditional two step solid phase method is greatly shortened manufacturing cycle；Relative to sides such as melted, tantalum pipe encapsulation
Method reduces reaction temperature, slow down the volatilization of Mg；Comparing to mechanical alloying, the composition controllability of the present invention is higher.This
The feature such as bright have that technique is simple, energy consumption is low, manufacturing cycle is short, block materials thermoelectricity capability reproducible, that obtain is excellent, non-
It is very suitable for large-scale industrial production.Meanwhile, the block materials consistency using this technique to prepare is high, thermoelectricity capability is excellent,
There is great business application potential.
Accompanying drawing explanation
Fig. 1 is the XRD figure spectrum of the Mg-Si-Sn base thermoelectricity material of the embodiment of the present invention 1 preparation.
Fig. 2 (a), (a ') are in embodiment of the present invention 1A respectively, step 2) after a single-step solid phase reaction, step 3) electric discharge etc. from
The FESEM picture (amplifying 50K times) of sample after sub-activated sintering；Fig. 2 (b), (b ') are in embodiment of the present invention 1B respectively, step
2) after a single-step solid phase reaction, step 3) the FESEM picture (amplifying 50K times) of block sample after plasma discharging activated sintering.
Fig. 3 is the thermoelectricity capability of the Mg-Si-Sn base thermoelectricity material of the embodiment of the present invention 1 preparation.
Fig. 4 is step 2 in the embodiment of the present invention 2) and step 3) gained sample XRD figure spectrum.
Fig. 5 (a), (a ') are preparation Mg in embodiment 2A respectively2.16(Si0.3Sn0.7)0.98Sb0.02During step 2) and step
Rapid 3) FESEM figure (amplifying 50K times) of gained sample；B (), (b ') are preparation Mg in embodiment 2B respectively2.24
(Si0.3Sn0.7)0.98Sb0.02During step 2) and step 3) gained sample FESEM figure (amplifying 50K times).
Fig. 6 is the thermoelectricity capability of the Mg-Si-Sn base thermoelectricity material of the embodiment of the present invention 2 preparation.
Fig. 7 is step 2 in the embodiment of the present invention 3) and step 3) gained sample XRD figure spectrum.
Fig. 8 (a), (a ') are preparation Mg in embodiment 3A respectively2.16(Si0.5Sn0.5)Sb0.02During step 2) and step
3) FESEM figure (amplifying 50K times) of gained sample；B (), (b ') are preparation Mg in embodiment 3B respectively2.16(Si0.4Sn0.6)0.98Sb0.02During step 2) and step 3) gained sample FESEM figure (amplifying 50K times)；C (), (c ') are embodiment respectively
3C is prepared Mg2.16(Si0.3Sn0.7)0.98Sb0.02During step 2) and step 3) gained sample FESEM figure (amplify 50K
Times).
Fig. 9 is the thermoelectricity capability of the Mg-Si-Sn base thermoelectricity material of the embodiment of the present invention 3 preparation.
Specific implementation method
In order to be better understood from the present invention, it is further elucidated with present disclosure below in conjunction with embodiment, but the present invention
Content is not limited solely to following example.
Embodiment 1
A, a kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material, it comprises the following steps:
1) in inert atmosphere glove box, by Mg2.16(Si0.3Sn0.7)0.98Sb0.02In the stoichiometric proportion of each element weigh
Mg powder (2N, 100～200 mesh), Mg2Si powder (2.5N, 200 mesh), Sn powder (2.5N, 200 mesh) and Sb powder (5N, 200 mesh) conduct
Raw material, then mixes powder in agate mortar；Then described powder is loaded in the mould that internal diameter is 12mm, first at 4MPa
Pressurize 5min under pressure, then pressurize 10min under 6MPa pressure, obtains a cylinder；
2) single-step solid phase reaction: by step 1) gained cylinder is placed in BN crucible, and will under vacuum condition (-0.1MPa)
Its sealing is placed in purity quartz glass pipe for high, is then placed in tube-type atmosphere furnace by quartz glass tube, heats up with 10K/min fast
Rate is heated to 823K, is incubated 5min, then furnace cooling；
3) plasma discharging activated sintering: by step 2) product that obtains is ground into powder, so in inert atmosphere glove box
After take a small amount of powder load internal diameter be 15mm graphite jig in, be 8Pa and powder sample two ends pressure in furnace chamber vacuum
For (i.e. graphite jig two ends pressure is 35MPa) under the conditions of 35MPa, it is heated to 930K with the heating rate of 100K/min and is incubated
5min, obtains Mg-Si-Sn base thermoelectricity material, i.e. consists of Mg2.16(Si0.3Sn0.7)0.98Sb0.02Block thermoelectric material.
B, a kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material, exist with the difference in the present embodiment A
In step 2) in heating rate be adjusted to 20K/min, other conditions are the most identical.
As shown in Figure 1: after a single-step solid phase reaction, synthesis has obtained Mg2Sn, but do not form solid solution, only through putting
After electricity plasma activated sintering, Mg2Si and Mg2Sn just solid solution completely forms single-phase product.
From Fig. 2 and Fig. 3: after plasma discharging activated sintering, the intercrystalline knot of prepared block thermoelectric material
Closing closely, consistency is high, and grain boundaries is scattered here and there substantial amounts of nano-particle；Carefully comparison diagram 2 (a ') understands with Fig. 2 (b '): relatively low
Heating rate can effectively improve the dispersibility of nano-particle, such that it is able to scatter phonon more consumingly, reduce material
Thermal conductivity, therefore uses heating rate faster can cause nanoparticle agglomerates, being slightly decreased of zT value.
Embodiment 2
A, a kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material, it comprises the following steps:
1) in inert atmosphere glove box, by Mg2.16(Si0.3Sn0.7)0.98Sb0.02In the stoichiometric proportion of each element weigh
Mg powder, Mg2Powder, as raw material, is then mixed in agate mortar by Si powder, Sn powder and Sb powder；Then described powder is loaded
Internal diameter is in the mould of 12mm, first pressurize 5min, then pressurize 10min under 6MPa pressure under 4MPa pressure, obtains a circle
Cylinder；
2) single-step solid phase reaction: by step 1) gained cylinder is placed in BN crucible, and will under vacuum condition (-0.1MPa)
Its sealing is placed in purity quartz glass pipe for high, is then placed in tube-type atmosphere furnace by quartz glass tube, heats up with 10K/min fast
Rate is heated to 823K, is incubated 5min, then furnace cooling；
3) plasma discharging activated sintering: by step 2) product that obtains is ground into powder, so in inert atmosphere glove box
After take a small amount of powder load internal diameter be 15mm graphite jig in, be 8Pa and powder sample two ends pressure in furnace chamber vacuum
Under the conditions of 35MPa, it is heated to 930K with the heating rate of 100K/min and is incubated 10min, obtaining Mg-Si-Sn matrix body heat
Electric material, i.e. consists of Mg2.16(Si0.3Sn0.7)0.98Sb0.02Block thermoelectric material.
B, a kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material, exist with the difference in the present embodiment A
In: by Mg2.24(Si0.3Sn0.7)0.98Sb0.02In the stoichiometric proportion of each element weigh raw material, other conditions with in the present embodiment A
Condition identical, prepare and consist of Mg2.24(Si0.3Sn0.7)0.98Sb0.02Block thermoelectric material.
Known by Fig. 4: the product after plasma discharging activated sintering is single-phase.From Fig. 5 and Fig. 6: with embodiment 1 phase
Seemingly, there is a large amount of nano-particle in material internal, thus can strengthen phon scattering, improves the zT value of material, therefore chemical composition
For Mg2.24(Si0.3Sn0.7)0.98Sb0.02Thermoelectric material thermoelectricity capability slightly above chemical composition be Mg2.16(Si0.3Sn0.7)0.98Sb0.02Thermoelectric material, especially chemical composition is Mg2.24(Si0.3Sn0.7)0.98Sb0.02Thermoelectric material in the heat of 750K
Electricity figure of merit zT is up to 1.28.
Embodiment 3
A, a kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material, it comprises the following steps:
1) in inert atmosphere glove box, by Mg2.16(Si0.5Sn0.5)0.98Sb0.02In the stoichiometric proportion of each element weigh
Mg powder, Mg2Powder, as raw material, is then mixed in agate mortar by Si powder, Sn powder and Sb powder；Then described powder is loaded
Internal diameter is in the mould of 12mm, first pressurize 5min, then pressurize 10min under 6MPa pressure under 4MPa pressure, obtains a circle
Cylinder；
2) single-step solid phase reaction: by step 1) gained cylinder is placed in BN crucible, and will under vacuum condition (-0.1MPa)
Its sealing is placed in purity quartz glass pipe for high, is then placed in tube-type atmosphere furnace by quartz glass tube, heats up with 10K/min fast
Rate is heated to 833K, is incubated 10min, then furnace cooling；
3) plasma discharging activated sintering: by step 2) product that obtains is ground into powder, so in inert atmosphere glove box
After take a small amount of powder load internal diameter be 15mm graphite jig in, be 5Pa and powder sample two ends pressure in furnace chamber vacuum
Under the conditions of 35MPa, it is heated to 930K with the heating rate of 100K/min and is incubated 10min, obtaining Mg-Si-Sn base thermoelectricity material
Material, i.e. consists of Mg2.16(Si0.5Sn0.5)0.98Sb0.02Block thermoelectric material.
B, a kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material, exist with the difference in the present embodiment A
In: by Mg2.16(Si0.4Sn0.6)0.98Sb0.02In the stoichiometric proportion of each element weigh raw material, other conditions with in the present embodiment A
Condition identical, prepare and consist of Mg2.16(Si0.4Sn0.6)0.98Sb0.02Block thermoelectric material.
C, a kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material, exist with the difference in the present embodiment A
In: by Mg2.16(Si0.3Sn0.7)0.98Sb0.02In the stoichiometric proportion of each element weigh raw material, other conditions with in the present embodiment A
Condition identical, prepare and consist of Mg2.16(Si0.3Sn0.7)0.98Sb0.02Block thermoelectric material.
It is Mg when chemical composition as shown in Figure 72.16(Si0.4Sn0.6)0.98Sb0.02And Mg2.16(Si0.3Sn0.7)0.98Sb0.02
Time, it is single-phase after plasma discharging activated sintering；And when chemical composition is Mg2.16(Si0.5Sn0.5)0.98Sb0.02Time, electric discharge etc.
Ion activation is the most single-phase after sintering, this and Mg2Si-Mg2The conclusion of the counterfeit binary phase diagraml of Sn is consistent.As shown in Figure 8: step 2) one
There is many nano-particle in the grain boundaries of single-step solid phase reaction products therefrom, through step 3) after plasma discharging activated sintering, crystal boundary
Place still remains the nano-particle formed in many single-step solid phase reactions, thus ultimately results in material and have higher zT value
(see Fig. 9).
The above is only the preferred embodiment of the present invention, it is noted that come for those of ordinary skill in the art
Saying, without departing from the concept of the premise of the invention, it is also possible to make some modifications and variations, these broadly fall into the present invention's
Protection domain.
Claims (6)
1. the quick controlled method preparing Mg-Si-Sn base thermoelectricity material, it is characterised in that comprise the steps of
1) dispensing tabletting: under inert gas shielding, by chemical formula Mg2(1+z)Si1-xSnxSby(0≤z≤0.12,0≤x≤1.0,
0≤y≤0.025) in the stoichiometric proportion of each element weigh Mg powder, Mg2Si powder, Sn powder and Sb powder, as raw material, then mix
Uniformly it is pressed into block；
2) single-step solid phase reaction: by step 1) sealing of gained block vacuum, then it is warmed up to 823-833K, is incubated 5-10min, with
Stove is cooled to room temperature；
3) plasma discharging activated sintering: by step 2) products therefrom is ground into powder under inert gas shielding, then puts
Electricity plasma activated sintering, i.e. can get high performance Mg-Si-Sn base thermoelectricity material.
A kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material the most according to claim 1, it is characterised in that
Described raw material Mg powder, Mg2Si powder, Sn powder, the purity of Sb powder are not less than 98%.
A kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material the most according to claim 1, it is characterised in that
The technique of described compacting is: first pressurize 5min, then pressurize 10min under 6MPa pressure under 4MPa pressure.
A kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material the most according to claim 1, it is characterised in that
Described step 2) in heating rate be 10-20K/min.
A kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material the most according to claim 1, it is characterised in that
Described step 3) plasma discharging activated sintering technique is: in furnace chamber vacuum less than 10Pa and sample two ends pressure be
Under conditions of 35MPa, it is heated to 930K with the heating rate of 100K/min and is incubated 5-10min.
6., according to the preparation method according to any one of claim 1-5, within 2h, i.e. can get high-performance Mg-Si-Sn base
Thermoelectric material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410446023.5A CN104232960B (en) | 2014-09-03 | A kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410446023.5A CN104232960B (en) | 2014-09-03 | A kind of quick controlled method preparing Mg-Si-Sn base thermoelectricity material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104232960A CN104232960A (en) | 2014-12-24 |
| CN104232960B true CN104232960B (en) | 2017-01-04 |
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