CN104218799A - Low-noise power circuit of uncooled infrared focal plane detector - Google Patents

Low-noise power circuit of uncooled infrared focal plane detector Download PDF

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Publication number
CN104218799A
CN104218799A CN201410517971.3A CN201410517971A CN104218799A CN 104218799 A CN104218799 A CN 104218799A CN 201410517971 A CN201410517971 A CN 201410517971A CN 104218799 A CN104218799 A CN 104218799A
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China
Prior art keywords
output
amplifier
pole
door
field effect
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Pending
Application number
CN201410517971.3A
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Chinese (zh)
Inventor
曾衡东
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Chengdu Jinglin Science and Technology Co Ltd
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Chengdu Jinglin Science and Technology Co Ltd
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Priority to CN201410517971.3A priority Critical patent/CN104218799A/en
Publication of CN104218799A publication Critical patent/CN104218799A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a low-noise power circuit of an uncooled infrared focal plane detector. The low-noise power circuit comprises two AND gates, a NOT gate, a buffer, an OR gate, a NAND gate, four amplifiers, two single triggers, a RS trigger, three field-effect tubes, a mirror image circuit, a plurality of capacitors and an inductor. According to the low-noise power circuit of the uncooled infrared focal plane detector, the circuit generates high voltages in a Boost manner, a Boost control circuit is integrated, high bias voltage can be provided for an infrared detector, and the circuit is low in noise.

Description

Non-refrigerated infrared detector low noise power supply circuit
Technical field
The present invention relates to a kind of non-refrigerated infrared detector low noise power supply circuit.
Background technology
Power circuit refers to the circuit design of the power unit being supplied to power consumption equipment supply of electric power, the circuit form of use and feature.Common power circuit has AC power circuit, DC power supply circuit etc.Boost circuit is a kind of switch DC booster circuit, and it can make output voltage higher than input voltage.
In Infrared Detectors, in order to obtain high responsiveness, often need to provide higher bias voltage.When bias voltage refers in transistor amplifier circuit and makes transistor be in magnifying state, the voltage that should arrange between Base-emitter, between collector-base.In order to Infrared Detectors work is better, need the power circuit that low noise is provided.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, there is provided a kind of non-refrigerated infrared detector low noise power supply circuit, this circuit adopts the mode of Boost to produce high voltage, is integrated with Boost control circuit, can provide higher bias voltage for Infrared Detectors, and circuit noise is little.
The object of the invention is to be achieved through the following technical solutions: non-refrigerated infrared detector low noise power supply circuit, it comprise 2 with door, 2 not gates, 1 or, a NAND gate, 4 amplifiers, 2 single triggers, rest-set flip-flop, 3 field effect transistor and a mirror image circuit;
The positive pole of described amplifier A connects reference voltage, the external LBI pin of negative pole, the output of amplifier A is connected with field effect transistor, one pole of described field effect transistor connects LEO pin, another pole is connected to ground, described reference voltage is also connected with the positive pole of amplifier B, the negative pole of amplifier B and feedback link, the output of amplifier B and being connected with door A, one pole of field effect transistor ground connection is also connected with mirror image circuit, mirror image circuit is also connected with the positive pole of amplifier C and a pole of field effect transistor Q2, another pole of Q2 connects a pole of field effect transistor Q1, the negative pole of amplifier C is connected with input, the output of amplifier C with or door be connected, or another input of door is connected with single trigger A, or the output of door is connected with rest-set flip-flop, be connected with the other end of rest-set flip-flop with the output of door A, the output of rest-set flip-flop and not gate A, be connected with the input of door B and single trigger A, be connected with field effect transistor Q2 and buffer respectively with the output of door, the output of buffer is connected with NAND gate, the output of not gate A is connected with an input of single trigger B and NAND gate respectively, single trigger B also and with an input of door A is connected, one pole of field effect transistor Q1 is connected with the negative pole of output and amplifier D respectively.The positive pole of amplifier D is connected with input, and the output of amplifier D is connected with NAND gate, and the output of NAND gate is connected with field effect transistor Q1 with door B, and the feedback of amplifier D is connected with the input of Q1.
It also comprises multiple electric capacity and an inductance, and described inductance C4 one end is connected with reference voltage, one end ground connection, described electric capacity C1 one end ground connection, one end connects input, and forms oscillating circuit with inductance L, one end earth of described electric capacity C2 and C3, the other end also connects output.
The invention has the beneficial effects as follows: the invention provides a kind of non-refrigerated infrared detector low noise power supply circuit, this circuit adopts the mode of Boost to produce high voltage, be integrated with Boost control circuit, higher bias voltage can be provided for Infrared Detectors, and circuit noise be little.
Accompanying drawing explanation
Fig. 1 is schematic block circuit diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail, but protection scope of the present invention is not limited to the following stated.
As shown in Figure 1, non-refrigerated infrared detector low noise power supply circuit, it comprise 2 with door, 2 not gates, 1 or, a NAND gate, 4 amplifiers, 2 single triggers, rest-set flip-flop, 3 field effect transistor and a mirror image circuit;
The positive pole of described amplifier A connects reference voltage, the external LBI pin of negative pole, the output of amplifier A is connected with field effect transistor, one pole of described field effect transistor connects LEO pin, another pole is connected to ground, described reference voltage is also connected with the positive pole of amplifier B, the negative pole of amplifier B and feedback link, the output of amplifier B and being connected with door A, one pole of field effect transistor ground connection is also connected with mirror image circuit, mirror image circuit is also connected with the positive pole of amplifier C and a pole of field effect transistor Q2, another pole of Q2 connects a pole of field effect transistor Q1, the negative pole of amplifier C is connected with input, the output of amplifier C with or door be connected, or another input of door is connected with single trigger A, or the output of door is connected with rest-set flip-flop, be connected with the other end of rest-set flip-flop with the output of door A, the output of rest-set flip-flop and not gate A, be connected with the input of door B and single trigger A, be connected with field effect transistor Q2 and buffer respectively with the output of door, the output of buffer is connected with NAND gate, the output of not gate A is connected with an input of single trigger B and NAND gate respectively, single trigger B also and with an input of door A is connected, one pole of field effect transistor Q1 is connected with the negative pole of output and amplifier D respectively.The positive pole of amplifier D is connected with input, and the output of amplifier D is connected with NAND gate, and the output of NAND gate is connected with field effect transistor Q1 with door B, and the feedback of amplifier D is connected with the input of Q1.
It also comprises multiple electric capacity and an inductance, and described inductance C4 one end is connected with reference voltage, one end ground connection, described electric capacity C1 one end ground connection, one end connects input, and forms oscillating circuit with inductance L, one end earth of described electric capacity C2 and C3, the other end also connects output.

Claims (3)

1. non-refrigerated infrared detector low noise power supply circuit, is characterized in that: it comprise 2 with door, 1 not gate, buffer, 1 or, a NAND gate, 4 amplifiers, 2 single triggers, rest-set flip-flop, 3 field effect transistor and a mirror image circuit;
The positive pole of described amplifier A connects reference voltage, the external LBI pin of negative pole, the output of amplifier A is connected with field effect transistor, one pole of described field effect transistor connects LEO pin, another pole is connected to ground, described reference voltage is also connected with the positive pole of amplifier B, the negative pole of amplifier B and feedback link, the output of amplifier B and being connected with door A, one pole of field effect transistor ground connection is also connected with mirror image circuit, mirror image circuit is also connected with the positive pole of amplifier C and a pole of field effect transistor Q2, another pole of Q2 connects a pole of field effect transistor Q1, the negative pole of amplifier C is connected with input, the output of amplifier C with or door be connected, or another input of door is connected with single trigger A, or the output of door is connected with rest-set flip-flop, be connected with the other end of rest-set flip-flop with the output of door A, the output of rest-set flip-flop and not gate A, be connected with the input of door B and single trigger A, be connected with field effect transistor Q2 and buffer respectively with the output of door, the output of buffer is connected with NAND gate, the output of not gate is connected with an input of single trigger B and NAND gate respectively, single trigger B also and with an input of door A is connected, one pole of field effect transistor Q1 is connected with the negative pole of output and amplifier D respectively.
2. the positive pole of amplifier D is connected with input, and the output of amplifier D is connected with NAND gate, and the output of NAND gate is connected with field effect transistor Q1 with door B, and the feedback of amplifier D is connected with the input of Q1.
3. non-refrigerated infrared detector low noise power supply circuit according to claim 1, it is characterized in that: it also comprises multiple electric capacity and an inductance, described electric capacity C4 one end is connected with reference voltage, one end ground connection, described electric capacity C1 one end ground connection, one end connects input, and forms oscillating circuit with inductance L, one end earth of described electric capacity C2 and C3, the other end also connects output.
CN201410517971.3A 2014-09-30 2014-09-30 Low-noise power circuit of uncooled infrared focal plane detector Pending CN104218799A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410517971.3A CN104218799A (en) 2014-09-30 2014-09-30 Low-noise power circuit of uncooled infrared focal plane detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410517971.3A CN104218799A (en) 2014-09-30 2014-09-30 Low-noise power circuit of uncooled infrared focal plane detector

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CN104218799A true CN104218799A (en) 2014-12-17

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CN201410517971.3A Pending CN104218799A (en) 2014-09-30 2014-09-30 Low-noise power circuit of uncooled infrared focal plane detector

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002063765A2 (en) * 2001-02-06 2002-08-15 Koninklijke Philips Electronics N.V. Integrated fet and driver
CN202050361U (en) * 2011-03-17 2011-11-23 广州视源电子科技有限公司 Direct current boost circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002063765A2 (en) * 2001-02-06 2002-08-15 Koninklijke Philips Electronics N.V. Integrated fet and driver
CN202050361U (en) * 2011-03-17 2011-11-23 广州视源电子科技有限公司 Direct current boost circuit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
聂丹: "高效同步整流DC-DC升压变换器的研究", 《中国优秀硕士学位论文全文数据库工程科技Ⅱ辑》, no. 12, 15 December 2006 (2006-12-15) *

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Application publication date: 20141217