CN104201926B - Half-H bridge power inverter system - Google Patents
Half-H bridge power inverter system Download PDFInfo
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- CN104201926B CN104201926B CN201410424734.2A CN201410424734A CN104201926B CN 104201926 B CN104201926 B CN 104201926B CN 201410424734 A CN201410424734 A CN 201410424734A CN 104201926 B CN104201926 B CN 104201926B
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Abstract
The invention belongs to a brushless DC (Direct Current) motor driver power inverter system, and particularly discloses a half-H bridge power inverter system, which comprises multiple bridge arm circuits connected in parallel. Each bridge arm circuit is composed of multiple power circuits connected in parallel; each power circuit is composed of a field effect tube, a switching speed control circuit and a grid control clamping circuit; a control signal output end of a motor driver is communicated with an input end of each switching speed control circuit; the output end of each switching speed control circuit is respectively communicated with an input end of one corresponding grid control clamping circuit and a grid of one corresponding field effect tube; the drain electrodes D of the field effect tubes in the same bridge arm circuit are communicated; the source electrodes S of the field effect tubes in the same bridge arm circuit are communicated; the drain electrodes D and the source electrodes S of the field effect tubes in two adjacent bridge arm circuits are communicated. The half-H bridge power inverter system is high in power, small in volume, high in reliability and good in electromagnetic compatibility, and can realize precise control and continuous as well as reliable operation of the brushless DC motor.
Description
Technical field
The invention belongs to a kind of brushless direct current motor driver power inverter system, and in particular to a kind of half-H-bridge power is inverse
Change system.
Background technology
Servo control mechanism is China controls carrier rocket flight the general designation of actuator subsystem, current carrier rocket servo
Electro-hydraulic servo technology is widely used in mechanism, i.e., by motor as hydraulic power, drives hydraulic pump to realize servo control mechanism
Hydraulic pressure system construction in a systematic way pressure promotes servo control mechanism to complete the action of rocket command request.Because traditional brush motor has brush wear
And the limitation of inapplicable high vacuum environment, present latest development trend is to replace brush motor to realize energy with brshless DC motor
Source driving function, the indispensable electronic installation that motor driver operates as brshless DC motor, as the liquid of rocket Navigation Control
The energy and power resources of pressure servo control mechanism, its functional reliability plays a decisive role to rocket flight success or failure.Control driver
Power reaches thousands of watts to tens of kilowatt, and needs to meet the lightweight of space product, small size, high power requirement, technical difficulty
It is very high.
Brshless DC motor has the advantages that high simple structure, reliability, easy maintenance and operational efficiency are high, replaces gradually
Brush motor.
Because continuously running for brshless DC motor needs electronics precise control, needs have been come by special motor driver
Into its control complexity is also greatly increased.
Brushless direct current motor driver becomes the necessary devices of brshless DC motor operating control, wherein Core Feature power
Voltage, electric current output need, by power inverter system realization, control signal to be changed into into alternation heavy-duty motor drive signal, drive
Galvanic electricity machine high-performance continuously runs.The performance of power inverter system, power density and reliability determine whole servo control mechanism or even
Haircut the reliability of carrier rocket, the development to carrier rocket has very important significance.
Power device list redundancy design is adopted power inverter system of the prior art more.It is fault-tolerant can ability it is low, power is little,
Volume is big, and reliability is low and Electro Magnetic Compatibility is poor.
The content of the invention
It is an object of the invention to provide a kind of half-H-bridge power inverter system, the system power is big, small volume, reliability
High, Electro Magnetic Compatibility is good；Alternating voltage, current signal can be produced, the precise control of brshless DC motor is realized and continuously may be used
By operating.
Realize the technical scheme of the object of the invention：A kind of half-H-bridge power inverter system, the system includes multiple bridges in parallel
Arm circuit, by multiple power circuit compositions in parallel, each power circuit is by field effect transistor, switch speed for each bridge arm circuit
Degree regulating circuit, grid control clamp circuit composition；The control signal output of brushless direct current motor driver is switched with each
The input of speed regulation circuit is connected, and each switching speed regulating circuit outfan is respectively clamped with the control of corresponding grid
The grid connection of position circuit input end, field effect transistor；Connect between the drain D of each field effect transistor in same bridge arm circuit
It is logical, connect between the source S of each field effect transistor in same bridge arm circuit；Field effect transistor in two neighboring bridge arm circuit
Drain D and source S between connect；The control signal input switch speed regulation circuit of brushless motor driver is carried out
Lifting speed regulates and controls, and controls multiple field effect transistor through the control signal of rate of climb regulation and control and is switched on or off simultaneously；When brushless straight
When the control signal of stream motor driver output is reached between the grid of field effect transistor and source electrode, if the control signal is logic
During high level, equal transient switching between the drain D and source S of each field effect transistor；If the control signal is logic low
When, equal moment shut-off between the drain D and source S of each field effect transistor；So as to outfan produces the power voltage and electricity of alternation
Stream, realizes the operating of control brshless DC motor.
Each described bridge arm circuit includes open loop protection circuit, the input and brushless dc of open loop protection circuit
Connect between the control signal output of machine driver, the outfan of open loop protection circuit is connected with the source S of field effect transistor；When
When electric charge in field effect transistor exceedes the threshold value of open loop protection circuit setting, the electricity in open loop protection circuit bleed off field effect transistor
Lotus, makes field effect transistor be returned to closed mode, so as to play circuit cut-off protection.
Each described bridge arm circuit includes absorbing circuit, and one end of absorbing circuit connects with the drain electrode of field effect transistor,
The other end of absorbing circuit is connected with the source electrode of field effect transistor；When field effect transistor produces transient peak potential pulse, the pulse
Absorbed by absorbing circuit.
Described bridge arm circuit is two circuits of the first bridge arm circuit and the second bridge arm circuit；First bridge arm circuit is included simultaneously
First power circuit, the second power circuit, the 3rd power circuit of connection；Second bridge arm circuit includes the second open-circuit-protection in parallel electricity
Road, the 4th power circuit, the 5th power circuit, the 6th power circuit；First power circuit, the second power circuit, the 3rd power
The outfan of circuit is connected with the outfan of the 4th power circuit, the 5th power circuit, the 6th power circuit.
The first described power circuit include the first power device field effect transistor, first switch speed regulation circuit, first
Grid controls clamp circuit；Second power circuit include the second power device field effect transistor, second switch speed regulation circuit, the
Two grids control clamp circuit；3rd power circuit include the 3rd power device field effect transistor, the 3rd switching speed regulating circuit,
3rd grid controls clamp circuit；The high-end control signal output of brushless direct current motor driver respectively with first switch speed
The input of regulating circuit, the input of second switch speed regulation circuit, the input of the 3rd switching speed regulating circuit connect
It is logical；The outfan of first switch speed regulation circuit controls respectively positive pole, first power device of clamp circuit with first grid
The grid G connection of field effect transistor；The outfan of second switch speed regulation circuit controls clamp circuit with second grid respectively
The grid G connection of positive pole, the second power device field effect transistor；The outfan of the 3rd switching speed regulating circuit respectively with the 3rd grid
The positive pole of pole control clamp circuit, the grid G connection of the 3rd power device field effect transistor；The leakage of the first power device field effect transistor
Interconnect between pole D, the drain D of the second power device field effect transistor, the drain D of the 3rd power device field effect transistor；The
The source S of one power device field effect transistor, the source S of the second power device field effect transistor, the 3rd power device field effect transistor
Interconnect between source S；The negative pole of first grid control clamp circuit C and the source S of the first power device field effect transistor
Connection, the negative pole of second grid control clamp circuit is connected with the source S of the second power device field effect transistor, the control of the 3rd grid
The negative pole of clamp circuit is connected with the source S of the 3rd power device field effect transistor.
The first described bridge arm circuit also includes the first open loop protection circuit, the input and nothing of the first open loop protection circuit
The high-end control signal output connection of brushless motor driver, the outfan of the first open loop protection circuit and the first power device
The source S of part field effect transistor, the source S of the second power device field effect transistor, the source S of the 3rd power device field effect transistor connect
It is logical.
The first described bridge arm circuit also includes the first absorbing circuit, and the first absorbing circuit is by first resistor and the first electric capacity
Composition, one end of the first resistor of the first absorbing circuit connects with one end of the first electric capacity, the other end of first resistor respectively with
The drain D of the first power device field effect transistor, the drain D of the second power device field effect transistor, the 3rd power device field effect transistor
Drain D connection；The other end of the first electric capacity source S, the second power device field respectively with the first power device field effect transistor
The source S of effect pipe, the connection of the source S of the 3rd power device field effect transistor.
The second described power circuit include the 4th power device field effect transistor, the 4th switching speed regulating circuit, the 4th
Grid controls clamp circuit；5th power circuit include the 5th power device field effect transistor, the 5th switching speed regulating circuit, the
Five grids control clamp circuit；6th power circuit include the 6th power device field effect transistor, the 6th switching speed regulating circuit,
6th grid controls clamp circuit；The high-end control signal output of brushless direct current motor driver respectively with the 4th switching speed
The input of regulating circuit, the input of the 5th switching speed regulating circuit, the input of the 6th switching speed regulating circuit connect
It is logical；The outfan of the 4th switching speed regulating circuit controls respectively positive pole, the 4th power device of clamp circuit with the 4th grid
The grid G connection of field effect transistor；The outfan of the 5th switching speed regulating circuit controls clamp circuit with the 5th grid respectively
The grid G connection of positive pole, the 5th power device field effect transistor；The outfan of the 6th switching speed regulating circuit respectively with the 6th grid
The positive pole of pole control clamp circuit, the grid G connection of the 6th power device field effect transistor；The leakage of the 4th power device field effect transistor
Interconnect between pole D, the drain D of the 5th power device field effect transistor, the drain D of the 6th power device field effect transistor；The
The source S of four power device field effect transistor, the source S of the 5th power device field effect transistor, the 6th power device field effect transistor
Interconnect between source S；The negative pole of the 4th grid control clamp circuit C and the source S of the 4th power device field effect transistor
Connection, the negative pole of the 5th grid control clamp circuit is connected with the source S of the 5th power device field effect transistor, the control of the 6th grid
The negative pole of clamp circuit is connected with the source S of the 6th power device field effect transistor.
The second described bridge arm circuit also includes the second open loop protection circuit, the input and nothing of the second open loop protection circuit
The high-end control signal output connection of brushless motor driver, the outfan of the second open loop protection circuit and the 4th power device
The source S of part field effect transistor, the source S of the 5th power device field effect transistor, the source S of the 6th power device field effect transistor connect
It is logical.
The second described bridge arm circuit also includes the second absorbing circuit, and the second absorbing circuit is by second resistance and the second electric capacity
Composition, one end of the second resistance of the second absorbing circuit connects with one end of the second electric capacity, the other end of second resistance respectively with
The drain D of the 4th power device field effect transistor, the drain D of the 5th power device field effect transistor, the 6th power device field effect transistor
Drain D connection；The other end of the second electric capacity source S, the 5th power device field respectively with the 4th power device field effect transistor
The source S of effect pipe, the connection of the source S of the 6th power device field effect transistor.
The present invention Advantageous Effects be：(1) device of the invention, will using vulnerabilities scan signal as input signal
Low tension switch signal is changed into high-voltage great-current motor drive signal, while carrying peak restrained and interference absorption function, has
The characteristics of power is big, small volume, reliability are high, Electro Magnetic Compatibility is good；For the motor control of the servo control mechanism of rocket flight control
System drives, and is capable of achieving high power density integrated.(2) device of the invention can realize the power device more than three of power inverter system
Degree design, possesses power device failure tolerant and ability to work twice, and fault-tolerant ability is significantly improved with existing single remaining device.
(3) possesses power device triplex redundance switching speed adjusting function, it is ensured that triplex redundance parallel power device opens the concordance of speed
And harmony, can effectively prevent triplex redundance device from opening the inconsistent caused device excessively stream of speed and heating lack of uniformity.(4) half
Bridge-type design simplifies circuit external connection, and convenient extension, can easy expansion be H-bridge circuit and three phase full bridge circuit, can be real
Existing motor driver fully unitaryization design, reduces internal drive line, and operation and maintenance performance is greatly improved.(5) with it is existing
There is the power device in technology to compare, the power device triplex redundance design of power inverter system makes three groups of power devices in parallel simultaneously
Work, the power-performance and rank of power inverter system bring up to original three times, and derating level and reliability are significantly improved.
(6) it is integrated with switching noise and absorbs and suppress function, function is complete, and without the need for optional equipment switching noise suppression circuit, simplifying makes
With improve Electro Magnetic Compatibility.(7) grid control clamper function is integrated with, when external control signal exceedes in short-term power device
When allowing input voltage, grid control clamp circuit can carry out clamper to input signal, it is ensured that its input voltage is less than safety
Voltage, protects power device.(8) semiconductor device open circuit protecting function is integrated with, i.e., when outside is input into or it without control signal
When incoming level is in nondeterministic statement, open circuit protecting function can ensure that the rapid bleed off of loop of power circuit control voltage prevents from opening by mistake
Logical, the design can be prevented effectively to be occurred causing device damage during open fault during work.(9) power device event twice can be realized
Hinder fault-tolerant and ability to work, be integrated with complete switch AF panel function, peripheral circuit is simple, with good expansible
Property, greatly improve in power level and reliability.The dynamic switch electromagnetic interference signal that (10) three groups of power circuit switches are produced
Absorbing circuit is connected to, by its Dynamic Absorption, it is ensured that the good Electro Magnetic Compatibility of whole device.(11) grid control clamp circuit
The light current motor control switch signal of control circuit is received, when the signal exceeds clamper thresholding, clamp circuit is by switching signal
Clamper is below thresholding, it is ensured that control signal allows range of signal less than power device.(12) power circuit is received effectively
Switching signal after, switched according to control signal, so as to produce alternating voltage, current signal, realize the accurate control of motor
System and continuous reliable operating.
Description of the drawings
Fig. 1 is a kind of system block diagram of half-H-bridge power inverter system provided by the present invention；
Fig. 2 is a kind of circuit theory diagrams of half-H-bridge power inverter system provided by the present invention.
In figure：1. the first bridge arm circuit, 101. first open loop protection circuits, 102. first power circuits, 103. second work(
Rate circuit, 104. the 3rd power circuits, 105. first absorbing circuits；
102A. the first power device field effect transistor, 102B. first switch speed regulation circuits, the control of 102C. first grids
Clamp circuit；
103A. the second power device field effect transistor, 103B. second switch speed regulation circuits, the control of 103C. second grids
Clamp circuit；
The power device field effect transistor of 104A. the 3rd, the switching speed regulating circuit of 104B. the 3rd, the control of the grids of 104C. the 3rd
Clamp circuit；
R1. first resistor, the electric capacity of C1. first；
2. the second bridge arm circuit, 201. second open loop protection circuits, 202. the 4th power circuits, 203. the 5th power electricity
Road, 204. the 6th power circuits, 205. second absorbing circuits；
The power device field effect transistor of 202A. the 4th, the switching speed regulating circuit of 202B. the 4th, the control of the grids of 202C. the 4th
Clamp circuit；
The power device field effect transistor of 203A. the 5th, the switching speed regulating circuit of 203B. the 5th, the control of the grids of 203C. the 5th
Clamp circuit；
The power device field effect transistor of 204A. the 6th, the switching speed regulating circuit of 204B. the 6th, the control of the grids of 204C. the 6th
Clamp circuit；
R2. second resistance, the electric capacity of C2. second.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.
As depicted in figs. 1 and 2, a kind of half-H-bridge power inverter system provided by the present invention, including the first bridge arm circuit 1
With the second bridge arm circuit 2, the first bridge arm circuit 1 is in parallel with the second bridge arm circuit 2.
As depicted in figs. 1 and 2, the first bridge arm circuit 1 include the first open loop protection circuit 101, the first power circuit 102,
Second power circuit 103, the 3rd power circuit 104, the first absorbing circuit 105.First power circuit of the first bridge arm circuit 1
102nd, the second power circuit 103, the 3rd power circuit 104 are that three line structures are identical, separate and power electricity of redundant parallel
Road；Power circuit is combined by field effect transistor, switching speed regulating circuit and grid control clamp circuit, and three is for entirely simultaneously
It is coupled structure, realizes that power circuit triple redundance connects.
As shown in figure 1, the first power circuit 102 includes that the first power device field effect transistor 102A, first switch speed are adjusted
Control circuit 102B, first grid control clamp circuit 102C.Second power circuit 103 includes the second power device field effect transistor
103A, second switch speed regulation circuit 103B, second grid control clamp circuit 103C.3rd power circuit 104 includes the
Three power device field effect transistor 104A, the 3rd switching speed regulating circuit 104B, the 3rd grid control clamp circuit 104C.
As depicted in figs. 1 and 2, the high-end control signal output of brushless direct current motor driver is protected respectively with the first open circuit
The input of protection circuit 101, the input of first switch speed regulation circuit 102B, second switch speed regulation circuit 103B
The input connection of input, the 3rd switching speed regulating circuit 104B.The outfan of the first open loop protection circuit 101 respectively with
The source S of the first power device field effect transistor 102A, the source S of the second power device field effect transistor 103A, the 3rd power device
The source S connection of field effect transistor 104A.One end of first resistor R1 of the first absorbing circuit 105 connects with one end of the first electric capacity C1
It is logical, drain D, the second power device field effect respectively with the first power device field effect transistor 102A of the other end of first resistor R1
The drain D of pipe 103A, the connection of the drain D of the 3rd power device field effect transistor 104A.The other end of the first electric capacity C1 is respectively with
The source S of one power device field effect transistor 102A, the source S of the second power device field effect transistor 103A, the 3rd power device field
The source S connection of effect pipe 104A.
As depicted in figs. 1 and 2, the outfan of first switch speed regulation circuit 102B controls clamper with first grid respectively
The grid G connection of the positive pole of circuit 102C, the first power device field effect transistor 102A.Second switch speed regulation circuit 103B's
Outfan controls respectively the positive pole of clamp circuit 103C, the grid G of the second power device field effect transistor 103A with second grid and connects
It is logical.The outfan of the 3rd switching speed regulating circuit 104B respectively with the 3rd grid control clamp circuit 104C positive pole, the 3rd
The grid G connection of power device field effect transistor 104A.The negative pole and the first power device of first grid control clamp circuit 102C
The source S connection of field effect transistor 102A.The negative pole and the second power device field effect transistor of second grid control clamp circuit 103C
The source S connection of 103A.The negative pole of the 3rd grid control clamp circuit 104C and the source of the 3rd power device field effect transistor 104A
Pole S is connected.The source S of the first power device field effect transistor 102A, the source S of the second power device field effect transistor 103A, the 3rd
Interconnect between the source S of power device field effect transistor 104A.The drain D of the first power device field effect transistor 102A,
The drain D of two power device field effect transistor 103A, the drain D of the 3rd power device field effect transistor 104A uniformly with power Vcc
Positive pole is connected；The source S of the first power device field effect transistor 102A, the source S of the second power device field effect transistor 103A, the 3rd
The source S of power device field effect transistor 104A is uniformly connected with the negative pole of power Vcc.
As shown in Fig. 2 the first open loop protection circuit 101 is made up of resistance, the Standard resistance range of the resistance is 1~20k Ω.
In the not connected transport process of first bridge arm circuit 1 or open circuit occurs in the cut-in operation middle and high end control signal of the first bridge arm circuit 1
When, during the first open loop protection circuit 101 can at any time bleed off the first power circuit 102, the second power circuit 103, the 3rd power electricity
Field effect transistor electric charge in road 104 so as to be returned to closed mode rapidly, so as to play circuit cut-off protection.First switch speed
Regulating circuit 102B, second switch speed regulation circuit 103B, the 3rd switching speed regulating circuit 104B are respectively by a resistance
Composition, the resistance of resistance is 5~50 Ω；As resistance is bigger, switch time is longer, the first power circuit 102, second
Power circuit 103, the 3rd power circuit 104 work concordance it is higher.First grid control clamp circuit 102C, second grid
Control clamp circuit 103C, first grid control clamp circuit 104C are respectively made up of a stabilivolt, work as brshless DC motor
When the control signal voltage magnitude of driver output exceedes the voltage stabilizing threshold value of grid control clamp circuit, grid control clamp circuit
Zener breakdown conducting and voltage stabilizing, it is ensured that transmit to the first power device field effect transistor 102A, the second power device field effect transistor
103A, the signal of telecommunication of the 3rd power device field effect transistor 104A are not over its withstanding voltage, it is ensured that circuit reliability.First inhales
Receive circuit 105 to be composed in series by first resistor R1 and the first electric capacity C1, the first power device field effect transistor 102A, the second power device
Part field effect transistor 103A, the 3rd power device field effect transistor 104A HF switch can produce transient peak voltage between its D-S
Pulse, the pulse frequency, if not suppressed easily to cause compared with strong electromagnetic, affects itself up to 10kHz~100MHz
Or even miscellaneous equipment work；High-frequency switching signal produces transient peak potential pulse first absorbing circuits of Jing of electromagnetic interference signal
105 are buffered decrease uptake, it is ensured that the good Electro Magnetic Compatibility of whole device；First absorbing circuit 105 can also be single using C
Purely capacitive type, R-D-C are other service forms such as the circuit network of resistance-diode-electric capacity composition.
As depicted in figs. 1 and 2, the second bridge arm circuit 2 include the second open loop protection circuit 201, the 4th power circuit 202,
5th power circuit 203, the 6th power circuit 204, the second absorbing circuit 205.4th power circuit of the second bridge arm circuit 2
202nd, the 5th power circuit 203, the 6th power circuit 204 are that three line structures are identical, separate and power electricity of redundant parallel
Road；Power circuit is combined by field effect transistor, switching speed regulating circuit and grid control clamp circuit, and three is for entirely simultaneously
It is coupled structure, realizes that power circuit triple redundance connects.
As shown in figure 1, the 4th power circuit 202 includes that the 4th power device field effect transistor 202A, the 4th switching speed are adjusted
Control circuit 202B, the 4th grid control clamp circuit 202C.5th power circuit 203 includes the 5th power device field effect transistor
203A, the 5th switching speed regulating circuit 203B, the 5th grid control clamp circuit 203C.6th power circuit 204 includes the
Six power device field effect transistor 204A, the 6th switching speed regulating circuit 204B, the 6th grid control clamp circuit 204C.
As depicted in figs. 1 and 2, the high-end control signal output of brushless direct current motor driver is protected respectively with the second open circuit
The input of protection circuit 201, the input of the 4th switching speed regulating circuit 202B, the 5th switching speed regulating circuit 203B
The input connection of input, the 6th switching speed regulating circuit 204B.The outfan of the second open loop protection circuit 201 respectively with
The source S of the 4th power device field effect transistor 202A, the source S of the 5th power device field effect transistor 203A, the 6th power device
The source S connection of field effect transistor 204A.One end of second resistance R2 of the second absorbing circuit 205 connects with one end of the second electric capacity C2
It is logical, drain D, the 5th power device field effect respectively with the 4th power device field effect transistor 202A of the other end of second resistance R2
The drain D of pipe 203A, the connection of the drain D of the 6th power device field effect transistor 204A.The other end of the second electric capacity C2 is respectively with
The source S of four power device field effect transistor 202A, the source S of the 5th power device field effect transistor 203A, the 6th power device field
The source S connection of effect pipe 204A.
As depicted in figs. 1 and 2, the outfan of the 4th switching speed regulating circuit 202B controls clamper with the 4th grid respectively
The grid G connection of the positive pole of circuit 202C, the 4th power device field effect transistor 202A.5th switching speed regulating circuit 203B's
Outfan controls respectively the positive pole of clamp circuit 203C, the grid G of the 5th power device field effect transistor 203A with the 5th grid and connects
It is logical.The outfan of the 6th switching speed regulating circuit 204B respectively with the 6th grid control clamp circuit 204C positive pole, the 6th
The grid G connection of power device field effect transistor 204A.The negative pole and the 4th power device of the 4th grid control clamp circuit 202C
The source S connection of field effect transistor 202A.The negative pole and the 5th power device field effect transistor of the 5th grid control clamp circuit 203C
The source S connection of 203A.The negative pole of the 6th grid control clamp circuit 204C and the source of the 6th power device field effect transistor 204A
Pole S is connected.The source S of the 4th power device field effect transistor 202A, the source S of the 5th power device field effect transistor 203A, the 6th
Interconnect between the source S of power device field effect transistor 204A.The drain D of the 4th power device field effect transistor 202A,
The drain D of five power device field effect transistor 203A, the drain D of the 6th power device field effect transistor 204A uniformly with power Vcc
Positive pole is connected；The source S of the 4th power device field effect transistor 202A, the source S of the 5th power device field effect transistor 203A, the 6th
The source S of power device field effect transistor 204A is uniformly connected with the negative pole of power Vcc.
As shown in Fig. 2 the second open loop protection circuit 201 is made up of resistance, the Standard resistance range of the resistance is 1~20k Ω.
In the not connected transport process of second bridge arm circuit 2 or when the work middle and high end control signal of the second bridge arm circuit 2 open circuit occurs, the
Can the power circuit 202 of bleed off the 4th, the 5th power circuit 203, the 6th power circuit 204 at any time during two open loop protection circuits 201
Middle field effect transistor electric charge so as to be returned to closed mode rapidly, so as to play circuit cut-off protection.4th switching speed regulation and control electricity
Road 202B, the 5th switching speed regulating circuit 203B, the 6th switching speed regulating circuit 204B are respectively made up of a resistance, electricity
The resistance of resistance is 5~50 Ω；As resistance is bigger, switch time is longer, the 4th power circuit 202, the 5th power electricity
Road 203, the 6th power circuit 204 work concordance it is higher.4th grid control clamp circuit 202C, the 5th grid control pincers
Position circuit 203C, the 6th grid control clamp circuit 204C are respectively made up of a stabilivolt, work as brushless direct current motor driver
When the control signal voltage magnitude of output exceedes the voltage stabilizing threshold value of grid control clamp circuit, grid control clamp circuit Zener hits
Perforate logical and voltage stabilizing, it is ensured that transmit to the 4th power device field effect transistor 202A, the 5th power device field effect transistor 203A, the 6th
The signal of telecommunication of power device field effect transistor 204A is not over its withstanding voltage, it is ensured that circuit reliability.Second absorbing circuit 205
It is composed in series by second resistance R2 and the second electric capacity C2, the 4th power device field effect transistor 202A, the 5th power device field effect
Pipe 203A, the 6th power device field effect transistor 204A HF switch can produce transient peak potential pulse, the arteries and veins between its D-S
Frequency is rushed up to 10kHz~100MHz, if not suppressed easily to cause compared with strong electromagnetic, affects itself or even other to set
Standby work；High-frequency switching signal produces second absorbing circuits of transient peak potential pulse Jing 205 of electromagnetic interference signal and is buffered
Decrease uptake, it is ensured that the good Electro Magnetic Compatibility of whole device；Second absorbing circuit 205 can also using C be pure capacitance type,
R-D-C is other service forms such as the circuit network of resistance-diode-electric capacity composition.
As depicted in figs. 1 and 2, a kind of operation principle of half-H-bridge power inverter system provided by the present invention is as follows：
The operation principle of (1) first bridge arm circuit 1：The high-end control signal of brushless direct current motor driver output is through the
One open loop protection circuit 101, point three road independent signals respectively enter negative pole, the second gate that first grid controls clamp circuit 102C
The negative pole of pole control clamp circuit 103C, the 3rd grid control the negative pole of clamp circuit 104C.When the first bridge arm circuit 1 is not connected with
Transport process in or the cut-in operation middle and high end control signal of the first bridge arm circuit 1 when there is open circuit, the first open loop protection circuit
Field effect transistor electric charge in 101 bleed off power circuits, can bleed off the first power circuit 102, the second power circuit the 103, the 3rd at any time
Field effect transistor electric charge in power circuit 104 so as to be returned to closed mode rapidly, so as to play circuit cut-off protection.Meanwhile, nothing
Three tunnels of the high-end control signal of brushless motor driver point respectively enter first switch speed regulation circuit 102B, second switch
Speed regulation circuit 103B, the 3rd switching speed regulating circuit 104B, first switch speed regulation circuit 102B, second switch speed
Degree regulating circuit 103B, the 3rd switching speed regulating circuit 104B carry out rate of climb tune to corresponding high-end control signal respectively
Control, to adjust the first power device field effect transistor 102A, the second power device field effect transistor 103A, the 3rd power device field effect
Pipe 104A service times, it is ensured that service time concordance.It is input into respectively through the high-end control signal in three tunnels of rate of climb regulation and control
The positive pole of first grid control clamp circuit 102C, the positive pole of second grid control clamp circuit 103C, the 3rd grid control pincers
The positive pole of position circuit 104C, first grid control clamp circuit 102C, second grid control clamp circuit 103C, the 3rd grid control
Clamp circuit 104C processed will be suppressed to below clamp voltage respectively beyond the control signal of clamp circuit clamp voltage, it is ensured that each
Corresponding first power device field effect transistor 102A, the second power device field effect transistor 103A, the 3rd power device field effect transistor
Requirement of the 104A input signals less than its input voltage≤20V.First power device field effect transistor 102A, the second power device
Field effect transistor 103A, the 3rd power device field effect transistor 104A are switched on or off simultaneously under the control of identical control signal.Electricity
The supply current of source Vcc passes through the first power device field effect transistor 102A, the second power device field effect transistor 103A, the 3rd power
Device field effect transistor 104A；The first power device field effect transistor 102A, the second power device field are flow through in supply current parallel connection simultaneously
Effect pipe 103A, the 3rd power device field effect transistor 104A；Field effect transistor in every group of circuit is only needed by 1/3 electric current, field
The heating reduction of effect pipe, reliability are improved.When the control signal of brushless direct current motor driver output reaches three field effects
When between the grid G and source S of pipe, if the control signal is logic high, the drain D and source electrode of three field effect transistor
Equal transient switching between S；If the control signal is logic low, between the drain D and source S of three field effect transistor
Moment turns off；So that the outfan of the device of the present invention produces the power voltage and electric current of alternation, brushless dc is realized
The precise control of machine and continuous reliable operating.
The operation principle of (2) second bridge arm circuits 2：The low side control signal of brushless direct current motor driver output is through the
Two open loop protection circuits 201 carry out the conversion road independent signals of Hou Fen tri- and respectively enter the negative of the 4th grid control clamp circuit 202C
Pole, the negative pole of the 5th grid control clamp circuit 203C, the negative pole of the 6th grid control clamp circuit 204C.When the second bridge arm electricity
In the not connected transport process in road 2 or when the cut-in operation middle and high end control signal of the second bridge arm circuit 2 open circuit occurs, the first open circuit
The effect of field effect transistor electric charge in the bleed off power circuit of protection circuit 101, can the power circuit 202 of bleed off the 4th, the 5th work(at any time
Field effect transistor electric charge in rate circuit 203, the 6th power circuit 204 so as to be returned to closed mode rapidly, protects so as to play open circuit
Shield is acted on.Meanwhile, three tunnels of low side control signal point of brushless direct current motor driver respectively enter the 4th switching speed regulation and control electricity
Road 202B, the 5th switching speed regulating circuit 203B, the 6th switching speed regulating circuit 204B, the 4th switching speed regulating circuit
202B, the 5th switching speed regulating circuit 203B, the 6th switching speed regulating circuit 204B are believed corresponding high-end control respectively
Number carry out rate of climb regulation and control, with adjust the 4th power device field effect transistor 202A, the 5th power device field effect transistor 203A,
Six power device field effect transistor 204A service times, it is ensured that service time concordance.It is high-end through three tunnels of rate of climb regulation and control
Control signal is input into respectively the positive pole of the 4th grid control clamp circuit 202C, the 5th grid control clamp circuit 203C just
Pole, the 6th grid control the positive pole of clamp circuit 204C, the positive pole of the 4th grid control clamp circuit 202C, the control of the 5th grid
The positive pole of clamp circuit 203C, the positive pole of the 6th grid control clamp circuit 204C are respectively by beyond clamp circuit clamp voltage
Control signal is suppressed to below clamp voltage, it is ensured that each self-corresponding 4th power device field effect transistor 202A, the 5th power device
The voltage request of part field effect transistor 203A, the 6th power device field effect transistor 204A input signal less than its input≤20V.The
Four power device field effect transistor 202A, the 5th power device field effect transistor 203A, the 6th power device field effect transistor 204A are in phase
It is switched on and off simultaneously with the control of control signal.The supply current of power Vcc passes through the 4th power device field effect transistor
202A, the 5th power device field effect transistor 203A, the 6th power device field effect transistor 204A；Supply current simultaneously parallel connection flows through the
Four power device field effect transistor 202A, the 5th power device field effect transistor 203A, the 6th power device field effect transistor 204A；Per group
Field effect transistor in circuit is only needed by 1/3 electric current, and the heating reduction of field effect transistor, reliability are improved.Work as brushless dc
When the control signal of machine driver output is reached between the grid G and source S of three field effect transistor, if the control signal is to patrol
When collecting high level, equal transient switching between the drain D and source S of three field effect transistor；If the control signal is logic low electricity
At ordinary times, equal moment shut-off between the drain D and source S of three field effect transistor；So that the outfan of the device of the present invention is produced
The power voltage and electric current of raw alternation, realizes the precise control of brshless DC motor and continuous reliable operating.
Two groups it is of the invention in half-H-bridge power inverter system parallel connection obtain full H bridges inversion system, can be used for DC brush
The control of motor drives and PWM speed governing, and the outfan of two groups of half-H-bridge power inverter systems is the driving of biphase brush direct current motor
Current signal, connects respectively the both positive and negative polarity of brush direct current motor.Three groups it is of the invention in half-H-bridge power inverter system parallel connection obtain
Three phase full bridge inversion system, the control that can be used for three-phase brushless dc motor drives and PWM speed governing, three groups of half-H-bridge power invertings
The outfan of system is respectively the driving current signal of U, V, W three-phase brushless dc motor, and brshless DC motor is connected respectively
U, V, W three-phase.
Above-described embodiment only provides power inverter system including two bridge arm circuits, each bridge arm circuit by three power electricity
The situation of road composition, said circumstances embodiment can realize that power circuit triple redundance connects.In addition in above-described embodiment, this
Invention can also adopt three or more than three bridge arm circuits, and each bridge arm circuit can also be by four or more than four work(
Rate circuit is constituted, i.e., the present invention can also be using 3,4 or even more redundancy designs.
Under normal circumstances, need in a brushless direct current motor driver inverse using 3 groups of half-H-bridge power for being carried of the invention
The three phase full bridge of change system composition.Now, if it is 15kW that power inverter system needs power, every group of power inverter system sets
Meter power takes 5kW.During normal work, 3 groups of power circuits work simultaneously, per group of power for averagely undertaking 1.7kW.If wherein two
Group power circuit failure, remaining one group of power circuit can still provide driving power 5kW demand in full.Therefore, the present invention, tool
Standby power device failure tolerant ability twice.Also, under the power level of single group power inverting device is compared with single channel design
2/3 is dropped, volume level has been dropped during no-failure operation and reliability is significantly improved.
The present invention is explained in detail above in conjunction with drawings and Examples, but the present invention is not limited to above-mentioned enforcement
Example, in the ken that those of ordinary skill in the art possess, can be with the work on the premise of without departing from present inventive concept
Go out various change.The content not being described in detail in the present invention can adopt prior art.
Claims (8)
1. a kind of half-H-bridge power inverter system, it is characterised in that：The system includes multiple bridge arm systems in parallel, each bridge arm
, by multiple power system compositions in parallel, each power system is by field effect transistor, switching speed regulator control system, grid for system
Control clamp system composition；The control signal output of brushless direct current motor driver is defeated with each switching speed regulator control system
Enter end to connect, each switching speed regulator control system outfan respectively controls clamp system input, field with corresponding grid
The grid connection of effect pipe；Connect between the drain D of each field effect transistor in same bridge arm system, same bridge arm system
Connect between the source S of each field effect transistor in system；The drain D and source S of field effect transistor in two neighboring bridge arm system
Between connect；The control signal input switch speed regulation system of brushless direct current motor driver carries out rate of climb regulation and control,
Multiple field effect transistor are controlled through the control signal of rate of climb regulation and control to be switched on or off simultaneously；Work as brushless direct current motor driver
When the control signal of output is reached between the grid of field effect transistor and source electrode, if the control signal is logic high, often
Equal transient switching between the drain D and source S of individual field effect transistor；If the control signal is logic low, each field effect
Should pipe drain D and source S between moment shut-off；So as to outfan produces the power voltage and electric current of alternation, control is realized
The operating of brshless DC motor；
Each described bridge arm system includes open-circuit-protection system, and input and the brshless DC motor of open-circuit-protection system drive
Connect between the control signal output of dynamic device, the outfan of open-circuit-protection system is connected with the source S of field effect transistor；Imitate on the spot
When the electric charge of Ying Guanzhong exceedes the threshold value of open-circuit-protection default, the electric charge in open-circuit-protection system bleed off field effect transistor makes
Field effect transistor is returned to closed mode, so as to play circuit cut-off protection；
Each described bridge arm system includes absorption system, and one end of absorption system connects with the drain electrode of field effect transistor, absorbs
The other end of system is connected with the source electrode of field effect transistor；When field effect transistor produces transient peak potential pulse, the pulse is inhaled
Receive Systemic absorption.
2. a kind of half-H-bridge power inverter system according to claim 1, it is characterised in that：Described bridge arm system is the
One bridge arm system (1) and the second bridge arm system (2) two systems；First bridge arm system (1) includes the first open-circuit-protection in parallel
System (101), the first power system (102), the second power system (103), the 3rd power system (104)；Second bridge arm system
(2) including the second open-circuit-protection system (201), the 4th power system (202), the 5th power system (203), the 6th work(in parallel
Rate system (204)；First power system (102), the second power system (103), the outfan of the 3rd power system (104) and
Four power systems (202), the 5th power system (203), the outfan of the 6th power system (204) are connected.
3. a kind of half-H-bridge power inverter system according to claim 2, it is characterised in that：The first described power system
(102) including the first power device field effect transistor (102A), first switch speed regulation system (102B), first grid control pincers
Position system (102C)；Second power system (103) includes the second power device field effect transistor (103A), second switch speed regulation
System (103B), second grid control clamp system (103C)；3rd power system (104) is including the 3rd power device field effect
Pipe (104A), the 3rd switching speed regulator control system (104B), the 3rd grid control clamp system (104C)；Brshless DC motor drives
The high-end control signal output of dynamic device input, second switch speed respectively with first switch speed regulation system (102B)
The input connection of the input of regulator control system (103B), the 3rd switching speed regulator control system (104B)；First switch speed is adjusted
The outfan of control system (102B) controls respectively positive pole, the first power device field effect of clamp system (102C) with first grid
The grid G connection of pipe (102A)；The outfan of second switch speed regulation system (103B) controls clamper with second grid respectively
The grid G connection of the positive pole of system (103C), the second power device field effect transistor (103A)；3rd switching speed regulator control system
(104B) outfan controls respectively positive pole, the 3rd power device field effect transistor of clamp system (104C) with the 3rd grid
(104A) grid G connection；The drain D of the first power device field effect transistor (102A), the second power device field effect transistor
(103A) interconnect between drain D, the drain D of the 3rd power device field effect transistor (104A)；First power device field
Source S, the 3rd power device field effect transistor of the source S of effect pipe (102A), the second power device field effect transistor (103A)
(104A) interconnect between source S；The negative pole of first grid control clamp system (102) C and the first power device field
The source S connection of effect pipe (102A), the negative pole of second grid control clamp system (103C) and the second power device field effect
The source S connection of pipe (103A), the negative pole and the 3rd power device field effect transistor of the 3rd grid control clamp system (104C)
(104A) source S connection.
4. a kind of half-H-bridge power inverter system according to claim 3, it is characterised in that：The first described bridge arm system
(1) the first open-circuit-protection system (101) is also included, input and the brshless DC motor of the first open-circuit-protection system (101) drive
The high-end control signal output connection of dynamic device, the outfan of the first open-circuit-protection system (101) and the first power device field are imitated
Source S, source S, the 3rd power device field effect transistor of the second power device field effect transistor (103A) of (102A) should be managed
(104A) source S connection.
5. a kind of half-H-bridge power inverter system according to claim 4, it is characterised in that：The first described bridge arm system
(1) the first absorption system (105) is also included, the first absorption system (105) is made up of first resistor (R1) and the first electric capacity (C1),
One end of the first resistor (R1) of the first absorption system (105) connects with one end of the first electric capacity (C1), first resistor (R1)
Other end drain D, the leakage of the second power device field effect transistor (103A) respectively with the first power device field effect transistor (102A)
The drain D connection of pole D, the 3rd power device field effect transistor (104A)；The other end of the first electric capacity (C1) respectively with the first power
The source S of device field effect transistor (102A), the source S of the second power device field effect transistor (103A), the 3rd power device field effect
The source S connection of (104A) should be managed.
6. a kind of half-H-bridge power inverter system according to claim 5, it is characterised in that：The second described power system
(202) including the 4th power device field effect transistor (202A), the 4th switching speed regulator control system (202B), the 4th grid control pincers
Position system (202C)；5th power system (203) regulates and controls including the 5th power device field effect transistor (203A), the 5th switching speed
System (203B), the 5th grid control clamp system (203C)；6th power system (204) is including the 6th power device field effect
Pipe (204A), the 6th switching speed regulator control system (204B), the 6th grid control clamp system (204C)；Brshless DC motor drives
The high-end control signal output of dynamic device respectively with input, the 5th switching speed of the 4th switching speed regulator control system (202B)
The input connection of the input of regulator control system (203B), the 6th switching speed regulator control system (204B)；4th switching speed is adjusted
The outfan of control system (202B) controls respectively positive pole, the 4th power device field effect of clamp system (202C) with the 4th grid
The grid G connection of pipe (202A)；The outfan of the 5th switching speed regulator control system (203B) controls clamper with the 5th grid respectively
The grid G connection of the positive pole of system (203C), the 5th power device field effect transistor (203A)；6th switching speed regulator control system
(204B) outfan controls respectively positive pole, the 6th power device field effect transistor of clamp system (204C) with the 6th grid
(204A) grid G connection；Drain D, the 5th power device field effect transistor of the 4th power device field effect transistor (202A)
(203A) interconnect between drain D, the drain D of the 6th power device field effect transistor (204A)；4th power device field
Source S, the 6th power device field effect transistor of the source S of effect pipe (202A), the 5th power device field effect transistor (203A)
(204A) interconnect between source S；The negative pole of the 4th grid control clamp system (202) C and the 4th power device field
The source S connection of effect pipe (202A), the negative pole of the 5th grid control clamp system (203C) and the 5th power device field effect
The source S connection of pipe (203A), the negative pole and the 6th power device field effect transistor of the 6th grid control clamp system (204C)
(202A) source S connection.
7. a kind of half-H-bridge power inverter system according to claim 6, it is characterised in that：The second described bridge arm system
(1) the second open-circuit-protection system (201) is also included, input and the brshless DC motor of the second open-circuit-protection system (201) drive
The high-end control signal output connection of dynamic device, the outfan of the second open-circuit-protection system (201) and the 4th power device field are imitated
Source S, source S, the 6th power device field effect transistor of the 5th power device field effect transistor (203A) of (202A) should be managed
(204A) source S connection.
8. a kind of half-H-bridge power inverter system according to claim 7, it is characterised in that：The second described bridge arm system
(1) the second absorption system (205) is also included, the second absorption system (205) is made up of second resistance (R1) and the second electric capacity (C1),
One end of the second resistance (R2) of the second absorption system (205) connects with one end of the second electric capacity (C2), second resistance (R2)
Other end drain D, the leakage of the 5th power device field effect transistor (203A) respectively with the 4th power device field effect transistor (202A)
The drain D connection of pole D, the 6th power device field effect transistor (204A)；The other end of the second electric capacity (C2) respectively with the 4th power
The source S of device field effect transistor (202A), the source S of the 5th power device field effect transistor (203A), the 6th power device field effect
The source S connection of (204A) should be managed.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410424734.2A CN104201926B (en) | 2014-08-26 | 2014-08-26 | Half-H bridge power inverter system |
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|---|---|---|---|
| CN201410424734.2A CN104201926B (en) | 2014-08-26 | 2014-08-26 | Half-H bridge power inverter system |
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| CN104201926B true CN104201926B (en) | 2017-05-17 |
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| CN101499753B (en) * | 2009-03-10 | 2011-08-10 | 常州合泰微特电机有限公司 | Brushless servo control system and driving apparatus based on permanent magnet brushless DC motor |
| CN102751926B (en) * | 2012-07-31 | 2014-11-05 | 江苏浩峰汽车附件有限公司 | Controller of brushless DC (direct current) motor for vehicle |
| CN103138554B (en) * | 2013-04-03 | 2015-04-22 | 西安西驰电子传动与控制有限公司 | Upper half-bridge and lower half-bridge driving interlocking method of brushless direct current motor driver |
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