CN104201111A - Method for manufacturing oxide semiconductor thin-film transistors - Google Patents
Method for manufacturing oxide semiconductor thin-film transistors Download PDFInfo
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- CN104201111A CN104201111A CN201410474652.9A CN201410474652A CN104201111A CN 104201111 A CN104201111 A CN 104201111A CN 201410474652 A CN201410474652 A CN 201410474652A CN 104201111 A CN104201111 A CN 104201111A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 239000001257 hydrogen Substances 0.000 claims abstract description 38
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 38
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000002360 preparation method Methods 0.000 claims description 14
- 238000009826 distribution Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 32
- 239000002184 metal Substances 0.000 abstract description 32
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000000137 annealing Methods 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910007541 Zn O Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- -1 MgZnO Inorganic materials 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical group [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention relates to a method for manufacturing oxide semiconductor thin-film transistors. The method includes depositing extremely thin semiconductor layers with hydroxide between source and drain electrode layers and source and drain electrode regions by the aid of a deposition process; ultimately forming the thin-film transistors by the aid of an annealing technology. Introduced hydrogen concentration is distributed in certain regions of the transistors, and the source and drain electrode layers are in contact with the source and drain electrode regions in the certain regions of the transistors. The highest introduced hydrogen concentration is distributed at contact interfaces of the source and drain electrode metal electrode layers, the source and drain electrode regions and intermediate layers, and the introduced hydrogen concentration is gradually reduced in the directions far away from the interfaces. Further, the source and drain metal electrode layers do not cover portions, which are close to channel regions, of the source and drain electrode regions, and the introduced hydrogen concentration is not distributed at the end, which is far away from the corresponding source and drain electrode region, of each source and drain electrode layer and in the channel regions. The method has the advantage that series resistance of the oxide semiconductor thin-film transistors can be effectively reduced without deterioration of the performance of the oxide semiconductor thin-film transistors.
Description
Invention field
The present invention relates to a kind of preparation method of thin-film transistor, especially a kind of preparation method of oxide semiconductor thin-film transistor.
Background technology
Thin-film transistor is as a kind of field-effect semiconductor device, in demonstration fields such as active matrix display drivings, there is the important utilization can not be substituted, semiconductor active material has vital impact to the performance of device and manufacturing process, the thin-film transistor that the silicon of take is active semiconductor material tends to exist mobility low, the shortcoming that light sensitivity is strong.The transparent broad-band gap oxide semiconductor material that the zinc oxide of take is representative can be good at solving the shortcoming of silicon semiconductor material, as the oxide semiconductor material that can be used for thin-film transistor, comprise ZnO, MgZnO, Zn-Sn-O, In-Zn-O, SnO, Ga2O3, In-Ga-O, In302, the material of the excellent performances such as In-Ga-Zn-O.But along with demonstration field develops rapidly, at present more and more higher to the characteristic requirements of oxide semiconductor thin-film transistor, for example require less series resistance, higher mobility.
Summary of the invention
The invention reside in and solve in the situation that not causing oxide thin film transistor hydraulic performance decline, reduce the series resistance of oxide semiconductor thin-film transistor;
For solving the problems of the technologies described above the preparation method who the invention provides a kind of thin-film transistor, this transistor comprises dielectric substrate; Be positioned at the grid electrode layer in dielectric substrate; Be positioned at the gate insulator that covers described grid electrode layer in dielectric substrate; Oxide semiconductor layer is formed on gate insulator, and comprise with grid electrode layer over against channel region and be positioned at the source drain region at channel region two ends; Source-drain electrode layer, is positioned in source drain region; It is characterized in that: the region contacting with described source drain region at described source-drain electrode layer has the hydrogen concentration distribution of introducing.In described source metal electrode layer and interface, described source region, and the hydrogen concentration that introduce the interface of described drain metal electrode and described drain region is the highest, and the hydrogen concentration of introducing in the direction away from interface diminishes gradually.At described source-drain electrode layer, away from one end of described source and drain areas, there is no the hydrogen concentration distribution of introducing.In the described source and drain areas part near described channel region, do not cover described source-drain electrode metal electrode layer, and in described channel region, there is no the hydrogen concentration distribution of introducing.The length of the described source and drain areas part of the described close described channel region that does not cover described source-drain electrode metal electrode layer be preferably drain region length 1/4 to 1/2 between.Described source-drain electrode layer is selected from a kind of in aluminium, titanium, molybdenum, neodymium, yttrium or tantalum.Described oxide semiconductor layer is a kind of in Zn-Sn-O, In-Zn-O, In-Ga-O, MgZnO, In2O3 layer.
Accompanying drawing explanation
Fig. 1-6 oxide semiconductor thin-film transistor of the present invention is at the sectional view of each preparatory phase.
Embodiment
The present invention can reduce source electrode, and the resistance between drain electrode and oxide semiconductor can not thought threshold voltage, cut-off current and mobility by shadow simultaneously;
Referring to the oxide semiconductor thin-film transistor sectional view of the present invention shown in Fig. 6, transistor 100 comprises dielectric substrate 101, in this dielectric substrate 101, deposit bottom grid layer 103, insulating cover 102 covers in dielectric substrate 101 to cover the form of bottom grid 103 completely, to play the effect of insulation isolation, as the gate dielectric layer of thin-film transistor, these gate dielectric layer 102 materials are elected silicon oxide layer as simultaneously.Oxide semiconductor layer 104 is positioned on this gate dielectric layer 102, bottom grid 103 over against oxide semiconductor region form channel region 1041, one side in the region of channel region 1041 both sides forms source region 1042, and the opposite side of channel region forms drain region 1042; Source metal electrode 105 and drain metal electrode 105 are formed on source region 1042 and drain region 1042, near source region 1042 and drain region 1042 parts of channel region 1041, do not covering source metal electrode layer 105 and drain metal electrode layer 105, this partial-length (along orientation) be preferably drain region length 1/4 to 1/2 between.Interface zone at source metal electrode layer 105 with source region 1042, and there is hydrogen ion doped at drain metal electrode layer 105 and the interface zone of drain region 1042.This interface zone is the highest with the hydrogen concentration of the interface introducing of drain region 1042 with 1042 interfaces, source region and drain metal electrode 105 at source metal electrode layer 105, and the hydrogen concentration of introducing in the direction away from interface diminishes gradually, that is to say, from the interface of source metal electrode layer 105 and source region 1042, the inside towards source metal electrode layer 105 diminishes the hydrogen concentration of introducing gradually, and towards source region, 1042 inside diminishes gradually; From the interface of drain metal electrode layer 105 and drain region 1042, the inside towards drain metal electrode layer 105 diminishes the hydrogen concentration of introducing gradually, and towards drain region, 1042 inside diminishes gradually.One end at source metal electrode layer 105 away from source region 1042, the source metal electrode layer region being conventionally connected with wiring layer contact does not have the hydrogen of introducing to distribute, that is to say that the hydrogen concentration distribution of introducing does not extend to the surface of source metal electrode layer 105, do is like this in order to prevent the degeneration of surface of metal electrode, the weatherability of intensifier electrode and stability; Same drain metal electrode layer 105 does not have the hydrogen of introducing to distribute away from one end of drain region 1042 yet.The hydrogen that introduce source region 1042 distributes and does not extend to channel region 1041, be in channel region 1041, not have the hydrogen of introducing to distribute, if the hydrogen of introducing enters into channel region, can cause the decay of device performance, for example can have a strong impact on cut-off current and threshold voltage, particularly on the mobility of channel region, can produce more serious impact, in technique, often with heat treatment, drive away the hydrogen of channel region so that the oxide semiconductor of channel region is purer; The hydrogen that introduce same drain region 1042 distributes and does not also extend to channel region 1041.Meanwhile, in the source region 1042 near channel region, do not cover source metal electrode layer 105 with drain region 1042 parts and can guarantee that with drain metal electrode layer 105 the hydrogen distribution of the interface zone introducing that source-drain electrode layer 105 contacts with source and drain areas 1042 can not enter channel region 1041;
On the one hand, the introducing of hydrogen can bring the resistance between superior source-drain electrode and semiconductor semiconductor, significantly reduces device series resistance, improves device efficiency; On the one hand, the too much introducing of hydrogen or hydrogen are incorporated into position improperly can bring negative effect to device again in order.Therefore the CONCENTRATION DISTRIBUTION of the hydrogen of introducing in metal electrode is leaked in source, and in the CONCENTRATION DISTRIBUTION of source and drain areas, the balance of device performance is played an important role, for example in metal electrode is leaked in whole source, introduce hydrogen distribution or introduce hydrogen distribution at whole source and drain areas, the counter productive that the introducing of hydrogen brings so will be over positive effect; The interface of leaking metal electrode and source and drain areas due to the source that is created in of series resistance is significantly greater than away from this interface.Therefore, the interface maximum of metal electrode and source and drain areas is leaked in the source that is distributed in of the hydrogen concentration of introducing, and reduces gradually in the direction of the interface away from source leakage metal electrode and source and drain areas; Its positive effect of balance and counter productive, improve device performance on the whole so to greatest extent;
In order to realize the oxide semi conductor transistor of said structure, provide following preparation technology:
Fig. 1-6 are the sectional view of thin-film transistor, form bottom grid layer 103 in dielectric substrate 101, and the formation of this grid layer 103 for example can be used the method for CVD deposition; In bottom gate electrode 103, form gate insulating film 102, this gate insulating film 102 such as can silica, the oxide insulating film such as aluminium oxide, hafnium oxide, can be also other applicable dielectric film; On gate insulating film, 102 form oxide semiconductor film;
This oxide semiconductor film can be by selecting suitable target through magnetron sputtering technique deposition, Zn-Sn-O, In-Zn-O or In-Ga-O film, and preparation temperature is at 500-600 degree.By etching, form afterwards the oxide semiconductor layer 104 of patterning, the thickness of oxide semiconductor layer preferably in 200 nanometers between 500 nanometers, the adjusting of its thickness can realize by controlling splash-proofing sputtering process parameter.Oxide semiconductor layer 104 after patterning, boron doping forms source-drain area 1042, with gate electrode layer over against oxide semiconductor film region be channel region 1041;
Afterwards, on oxide semiconductor layer 104, depositing insulating layer 106, and through patterning, the channel region 1041 of the insulating barrier 106 complete capping oxide semiconductor layers after patterning, and part covers the source and drain areas 1042 near channel region 1041, the length of covering be preferably source and drain areas length 1/4 to 1/2 between;
Be not insulated having on drain region that layer 106 covers, utilize the rich hydroxide semiconductor layer 1021 of hydrogeneous atmosphere magnetron sputtering technique deposit very thin, the thickness of rich hydroxide semiconductor layer 1021 is as thin as a wafer 8-15 nanometer, the oxide semiconductor material that this richness hydroxide semiconductor layer 1021 contains is identical with oxide semiconductor layer 104, and the formation technique of this richness hydroxide semiconductor layer 1021 is as follows:
(1) substrate is inserted to magnetron sputtering apparatus, select the target with oxide semiconductor layer 104 same materials, base vacuum degree is 2 * 10
-4pa, between underlayer temperature 400-600 degree Celsius;
(2) pass into and take nitrogen atmosphere, this takes the hydrogen that the high-purity argon gas that nitrogen atmosphere is every 90 parts of volumes (99.999%) carries 10 parts of volumes;
(3) sputtering power is 20-40w, starts sputter, and deposit thickness is in 8-20 nanometer;
(4) vacuum is cooling fast, completes deposition;
After completing rich hydroxide semiconductor layer 1021, depositing metal layers, the material of metal level is such as being the materials such as aluminium, titanium, molybdenum or neodymium, yttrium, tantalum.And through the patterned source-drain electrode layer 105 of graphical formation, this patterned source-drain electrode layer 105 contacts with the rich hydroxide semiconductor layer 1021 on source and drain areas;
Finally this thin-film transistor is heat-treated to activate the hydrogen being distributed in rich hydroxide semiconductor layer 1021, and spread to both sides, to obtain the needed oxide thin film transistor with the hydrogen concentration gradient of introducing, heat treatment temperature is preferably 350-600 degree Celsius, more preferably 450 degrees Celsius, time is 10-20 minute, now rich hydroxide semiconductor layer 1021 thickens with the boundary of source-drain area, that is rich hydroxide semiconductor layer 1021 becomes a part for source and drain areas, so far complete the making of oxide semiconductor thin-film transistor of the present invention;
It should be noted that the above-mentioned preparation technology who exemplifies is tightly attainable a kind of mode, can not limit the present invention can realize by other similar modes.
Claims (7)
1. a preparation method for oxide semiconductor thin-film transistor, comprises step:
A, at the upper bottom grid layer (103) that forms of dielectric substrate (101), at the upper gate insulating film (102) that forms of bottom gate electrode (103), on gate insulating film, (102) form patterned oxide semiconductor layer;
B, described patterned oxide semiconductor layer comprise gate electrode layer over against channel region (1041) and the source and drain areas of channel region both sides;
C, on described patterned oxide semiconductor layer, form the insulating barrier (106) of patterning, the insulating barrier of this patterning covers channel region and part source and drain areas;
D, form rich hydroxide semiconductor layer as thin as a wafer with described being insulated on the source and drain areas that layer covers;
The source-drain electrode layer of e, deposition pattern, and contact with the rich hydroxide semiconductor layer on source and drain areas;
F, heat treatment, complete preparation.
2. preparation method as claimed in claim 1, described in be insulated the source and drain areas that layer covers length be preferably source and drain areas length 1/4 to 1/2 between.
3. preparation method as claimed in claim 1, the thickness of described rich hydroxide semiconductor layer (1021) is as thin as a wafer 8-15 nanometer.
4. preparation method as claimed in claim 1, described rich hydroxide semiconductor layer is as thin as a wafer obtained by hydrogeneous atmosphere magnetron sputtering technique deposition.
5. preparation method as claimed in claim 1, the highest in the hydrogen concentration of described source-drain electrode layer and the introducing of interface, described source region, and the hydrogen concentration of introducing in the direction away from interface diminishes gradually.
As claim 5 preparation method, described source-drain electrode layer does not have away from one end of described source and drain areas the hydrogen concentration distribution of introducing, and there is no the hydrogen concentration distribution of introducing in described channel region.
7. any one claim as described in claim 1-6, described hydrogeneous atmosphere magnetron sputtering technique comprises the following steps:
A, substrate is inserted to magnetron sputtering apparatus, select the target with oxide semiconductor layer (104) same material, base vacuum degree is 2 * 10-4pa, between underlayer temperature 400-600 degree Celsius;
B, pass into and take nitrogen atmosphere, this takes the hydrogen that the high-purity argon gas that nitrogen atmosphere is every 90 parts of volumes (99.999%) carries 10 parts of volumes;
C, sputtering power are 20-40w, start sputter, and deposit thickness is in 8-20 nanometer;
D, vacuum are cooling fast, complete deposition.
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| CN201410474652.9A CN104201111A (en) | 2014-09-18 | 2014-09-18 | Method for manufacturing oxide semiconductor thin-film transistors |
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| CN201410474652.9A CN104201111A (en) | 2014-09-18 | 2014-09-18 | Method for manufacturing oxide semiconductor thin-film transistors |
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