CN104198060A - High temperature-resistant wireless MEMS temperature sensing system - Google Patents
High temperature-resistant wireless MEMS temperature sensing system Download PDFInfo
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- CN104198060A CN104198060A CN201410426020.5A CN201410426020A CN104198060A CN 104198060 A CN104198060 A CN 104198060A CN 201410426020 A CN201410426020 A CN 201410426020A CN 104198060 A CN104198060 A CN 104198060A
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Abstract
The invention provides a high temperature-resistant wireless MEMS temperature sensing system. The high temperature-resistant wireless MEMS temperature sensing system comprises a wireless inquiry unit for sending/receiving an electromagnetic wave signal, measuring, storing and processing the temperature data and taking the temperature data as a final sensing signal, an acoustic surface wave resonance device for receiving the electromagnetic wave signal from the wireless inquiry unit, converting the electromagnetic wave signal into acoustic surface wave and then converting the acoustic surface wave into a new electromagnetic wave signal, and feeding back the new electromagnetic wave signal to the wireless inquiry unit, and a display device for receiving and displaying a temperature measurement result from the wireless inquiry unit. The high temperature-resistant wireless MEMS temperature sensing system is passive, wireless, resistant to high temperatures, small in volume, and capable of realizing real-time measurement.
Description
Technical field
The present invention relates to field of sensing technologies, relate in particular to a kind of high temperature resistant wireless MEMS temperature-sensing system.
Background technology
Realizing Real-Time Monitoring to temperature under the high-temperature severe environments such as gas turbine, jet engine, tank and marine engine, wind-tunnel, spacecraft, nuclear reactor, oil well, is to raise the efficiency and the important ring of fault diagnosis.The research of high temperature resistant sensor-based system is not only significant and demand is urgent, is one of the emphasis direction of observation and control technology development and difficult point content.High temperature resistant sensor-based system relates generally to following three aspect problems: 1) exotic material; 2) forming processing technology of material (can with MEMS process compatible); 3) design of the sensor construction based on new principle.
The most ripe current high-temperature measurement technology is thermopair technology, but it exists inherent defect: the one, and thermopair is wired measuring, a little less than output signal and easily by common mold noise interference; The 2nd, thermopair long-term work has very large drift under hot environment, and temperature measurement accuracy is low; The 3rd, thermopair is to mordant sensitivity, and the life-span is short.
Currently used sensor-based system is mainly optical fiber form, but need to carry out special packaging protection to single and fiber head, and under high temperature, the thermal expansivity of encapsulation and fibrous material does not mate and easily causes sensor failure.In addition, owing to relating to light path design and signal processing complexity, cause entire system complexity high, integration is poor.So far, optical fiber sensing system is all wired measurings, can not realize the long-term of temperature under hot environment and measure in real time.The adaptability of wired measuring under the rugged surroundings such as high temperature has certain limitation, is faced with serious high temperature failure problem under hot environment.And active sensor also has two large inherent defects: the one, owing to relying on power supply, active sensor must periodic maintenance in long-term use procedure, change battery, causes that its serviceable life is limited, volume is larger; The 2nd, because the batteries such as solid lithium battery are subject to the restriction of electrochemical process, at high temperature there will be serious hydraulic performance decline, and that built-in signal treatment circuit is generally is silica-based, silicon-based electronic circuits maximum operating temperature in non-refrigerated situation is 150 DEG C, thereby makes active sensor be difficult to adapt to the rugged surroundings such as high temperature.
Summary of the invention
The present invention is intended to solve at least to a certain extent one of technical matters in correlation technique.
For this reason, the object of the invention is to propose a kind of passive, wireless, high temperature resistant, volume is little, the MEMS temperature-sensing system that can measure in real time.
To achieve these goals, in embodiments of the invention, propose a kind of high temperature resistant wireless MEMS temperature-sensing system, comprising: wireless inquiry unit, for sending/receiving electromagnetic wave signal, measurement, Storage and Processing temperature data, and using described temperature data as final transducing signal; Surface acoustic wave resonance device, described surface acoustic wave resonance device is for receiving the described electromagnetic wave signal from described wireless inquiry unit, and described electromagnetic wave signal is converted to after surface acoustic wave, again described surface acoustic wave is converted to new electromagnetic wave signal, and described new electromagnetic wave signal is fed back to described wireless inquiry unit; Display device, for receiving and showing the temperature measurement result from described wireless inquiry unit.
According to the high temperature resistant wireless MEMS temperature-sensing system of the embodiment of the present invention, surface acoustic wave resonance device is arranged on high-temperature area, and wireless inquiry unit and display device are arranged on low-temperature region.Electromagnetic wave signal is sent to surface acoustic wave resonance device by wireless inquiry unit, and the inverse piezoelectric effect of the interdigital transducer by surface acoustic wave resonance device is at surface acoustic wave of piezoelectric membrane surface activation.Surface acoustic wave is propagated along piezoelectric membrane, is reflected to form resonance by two of left and right periodicity reflecting grating, and its resonance frequency is relevant with piezoelectric membrane temperature.Then the interdigital transducer of surface acoustic wave resonance device is transformed into new electromagnetic wave signal by piezoelectric effect by surface acoustic wave again and sends to behind wireless inquiry unit, and wireless inquiry unit is sent to display device by final process result by the mode of wireless transmission and shows by processing.That high temperature resistant wireless MEMS temperature-sensing system of the present invention has advantages of is high temperature resistant, passive, wireless, can measure in real time.
In some instances, described surface acoustic wave resonance device specifically comprises: substrate, and described substrate is made up of exotic material; Two reflecting gratings, described reflecting grating is arranged on the upper surface of described substrate and described two reflecting gratings separate; Interdigital transducer, described interdigital transducer is arranged on the upper surface of described substrate and between described two reflecting gratings; Small size antenna, described small size antenna is arranged on the upper surface of described substrate, and described small size antenna is connected with described interdigital transducer, for receiving and send electromagnetic wave signal; And piezoelectric membrane, described piezoelectric membrane is arranged on the upper surface of described high temperature resistant substrate, and wherein, described two reflecting gratings, described interdigital transducer and described small size antenna are between described substrate and described piezoelectric membrane.
In some instances, described exotic material is silit.
In some instances, described piezoelectric membrane is aluminum nitride piezoelectric film.
In some instances, described interdigital transducer is metal interdigital transducers.
In some instances, described reflecting grating is metallic reflection grid.
In some instances, determine the electrode of described interdigital transducer and the width of described reflecting grating by the interdigital spacing of the resonance frequency of described surface acoustic wave resonance device, described interdigital transducer and the velocity of propagation of described surface acoustic wave.
In some instances, described wireless inquiry unit comprises: core processor; Direct Digital Frequency Synthesizers, described Direct Digital Frequency Synthesizers is connected with described core processor; Transmitter, described transmitter is connected with described Direct Digital Frequency Synthesizers; Diplexer, described diplexer is connected with described transmitter; Receiver, described receiver is connected with described diplexer; Detector, described detector is connected with described core processor with described receiver respectively; Antenna, for sending and receiving electromagnetic wave signal.
In some instances, described core processor is ZigBee single-chip microcomputer.
In some instances, described wireless inquiry unit is sent electromagnetic wave signal or is received the electromagnetic wave signal sending from described surface acoustic wave resonance device by surface acoustic wave resonance device described in described day alignment, and sends described temperature measurement result to described display device.The aspect that the present invention is additional and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Brief description of the drawings
Fig. 1 is the structured flowchart of high temperature resistant according to an embodiment of the invention wireless MEMS temperature-sensing system;
Fig. 2 is the structured flowchart of the surface acoustic wave resonance device of one embodiment of the invention;
Fig. 3 is the floor map of the surface acoustic wave resonance device of one embodiment of the invention;
Fig. 4 is the diagrammatic cross-section of the surface acoustic wave resonance device of one embodiment of the invention; With
Fig. 5 is the schematic diagram of the high temperature resistant wireless MEMS temperature-sensing system of one embodiment of the invention.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Be exemplary below by the embodiment being described with reference to the drawings, be intended to for explaining the present invention, and can not be interpreted as limitation of the present invention.
Embodiments of the invention propose a kind of high temperature resistant wireless MEMS temperature-sensing system, as shown in Figure 1, comprising: wireless inquiry unit 100, surface acoustic wave resonance device 200 and display device 300.
Wherein, wireless inquiry unit 100 is for sending/receiving electromagnetic wave signal, measure, Storage and Processing temperature data, and using temperature data as final transducing signal.Surface acoustic wave resonance device 200 is for receiving the electromagnetic wave signal from wireless inquiry unit 100, and electromagnetic wave signal is converted to after surface acoustic wave, again surface acoustic wave is converted to new electromagnetic wave signal, and new electromagnetic wave signal is fed back to wireless inquiry unit 100.Display device 300 is for receiving and showing the temperature measurement result from wireless inquiry unit 100.
Particularly, in one embodiment of the invention, wireless inquiry unit 100 specifically comprises: core processor 11, Direct Digital Frequency Synthesizers (direct digital synthesizer, DDS) 12, transmitter 13, diplexer 14, receiver 15, detector 16, antenna 17.Wherein, DDS12 is connected with core processor 11.Transmitter 13 is connected with DDS12.Diplexer 14 is connected with transmitter 13.Receiver 15 is connected with diplexer 14.Detector 16 is connected with core processor 11 with receiver 15 respectively.Antenna 17 is for sending and receiving electromagnetic wave signal.
Particularly, in one embodiment of the invention, core processor 11 adopts ZigBee single-chip microcomputer as core processor, is responsible for synchronous all measuring processs, Storage and Processing temperature data, and carries out wireless telecommunications with the ZigBee single-chip microcomputer 13 of display end.DDS12 is produced the radiofrequency signal of 434MHz through mixing, filtering by the control of ZigBee mcu programming according to ISM (International Safety Management) rule.The state conversion that diplexer 14 between transmitter 13 and receiver 15 is responsible for transmitting and receiving.In the time of emission state, emission of radio frequency signals inquiry surface acoustic wave resonance device.In the time of accepting state, receiver 15 to echoed signal receive, filtering, amplification, then transfer to ZigBee single-chip microcomputer to carry out signal processing after radio-frequency probe 16 digitizings.Final signal result is gone out by ZigBee single-chip microcomputer wireless transmit.
In one embodiment of the invention, surface acoustic wave resonance device 200, as shown in Figure 2, specifically comprises: substrate 21, interdigital transducer 22, two reflecting gratings 23, small size antenna 24 and piezoelectric membranes 25.
Wherein, substrate 21 is made up of exotic material.Two reflecting gratings 23 be arranged on the upper surface of substrate 21 and two reflecting gratings 23 spaced apart.Interdigital transducer (Interdigital Transducer, IDT) 22 is arranged on the upper surface of substrate 21 and between two reflecting gratings 23.Small size antenna 24 is arranged on the upper surface of substrate 21, and small size antenna 24 is connected with interdigital transducer 22, for receiving and send electromagnetic wave signal.Piezoelectric membrane 25 is arranged on the upper surface of described high temperature resistant substrate, and wherein, interdigital transducer 22, two reflecting gratings 23 and small size antenna 24 are between substrate 21 and piezoelectric membrane 25, as shown in Figures 3 and 4.
Particularly, in one embodiment of the invention, the exotic material that making substrate 21 adopts is silit (SiC).SiC is that a kind of mechanical property is good, the semiconductor material of chemistry and stable electrical properties, broad-band gap, and high temperature application potential is huge, and its characteristic is as shown in table 1.
Table 1 different crystal forms SiC and other semiconductor material characteristics
| Performance (unit) | 3C-SiC | 4H-SiC | 6H-SiC | AlN | Adamas | Si |
| Fusing point (DEG C) | 2830 distillations | 2830 | 2830 distillations | 2470 | 4000 phase transformations | 1420 |
| Energy gap (eV) | 2.4 | 3.23 | 3.0 | 6.2 | 5.6 | 1.1 |
| Breakdown field strength (× 10 6V/cm) | 2.0 | 2.0～2.5 | 2.5 | 10 | 5.0 | 0.25 |
| Thermal conductivity (W/cm*k) | 5.0 | 3.7 | 5.0 | 1.6 | 20 | 1.5 |
| Young modulus (GPa) | 450 | 448 | 450 | 340 | 1035 | 190 |
| Transaudient speed (× 10 3m/s) | 11.9 | 11.9 | 11.9 | 11.4 | 17.2 | 9.1 |
| Yield strength (GPa) | 21 | 21 | 21 | -- | 53 | 7 |
| Thermal expansivity (DEG C × 10 -6) | 3.0 | 4.2 | 4.5 | 4.0 | 0.8 | 2.6 |
| Chemical stability | Fabulous | Fabulous | Fabulous | Good | Generally | Generally |
Particularly, in one embodiment of the invention, piezoelectric membrane 25 is aluminium nitride (AlN) piezoelectric membrane.Available high temperature resistant piezoelectric has LGS (LGS), phosphoric acid gallium (GaPO at present
4), aluminium nitride (AlN) etc., as shown in table 2.With LGS (LGS), phosphoric acid gallium (GaPO
4), the piezoelectric such as the RE borate method difference of growing by crystal, AlN film can be deposited on non-piezoelectric substrate, can adopt the method growing AIN films such as metal organic compound chemical gaseous phase deposition (MOCVD), pulsed laser precipitation, magnetron sputtering, its characteristic index is as shown in table 3.
The resistant to elevated temperatures piezoelectric of table 2
| Piezoelectric | Limited temperature (DEG C) | Limited reason |
| Lithium tetraborate (LiB 4O 7) | 230 | Excessive ionic conductivity |
| Lithium niobate (LiNbO 3) | 300 | Decompose |
| Lithium tantalate (LiTaO 3) | 300 | Decompose |
| Alpha-quartz (α-quartz) | 573 | Phase transformation |
| Aluminium borate (AlPO 4) | 588 | Phase transformation |
| Phosphoric acid gallium (GaPO 4) | 970 | Phase transformation |
| Aluminium nitride (AlN) | ～1000 | Inoxidizability |
| LGS (Langasite) | 1470 | Fusing point |
| RE borate (Oxyborates) | ～1500 | Fusing point |
Table 3 AlN film characteristics index
| Characteristic index | Parameter |
| Energy gap | 6.2eV |
| Resistivity | 1032Ω·cm |
| Thermal conductivity | 320W·Mk-1 |
In practical operation, the growth substrate of AlN piezoelectric membrane can adopt Si, SiC, GaN, ZnO, MgO, sapphire etc.The lattice mismatch of SiC and AlN only has 3.5%, is the optimal material of AlN heteroepitaxial growth.Therefore, in one embodiment of the invention, first through developing a film, at SiC substrate surface evaporation layer of metal material, then produce IDT, small size antenna and reflection grizzly bar through photoetching, corrosion technology.Finally adopt magnetron sputtering technique one deck aluminium nitride film of growing in SiC substrate, adopt MEMS fabrication techniques AlN film/SiC double-decker.This is simple in structure, without encapsulation.And, all adopt metal material to make interdigital transducer and reflecting grating, and be clipped between AlN film and SiC substrate, the natural containment of the rugged surroundings such as one deck opposing high temperature is provided for IDT.
In one embodiment of the invention, in the time that surface acoustic wave resonance device designs, by resonance frequency f
0, relational expression between the interdigital spacing L of IDT and acoustic surface wave propagation speed v
determine IDT electrode and reflecting grating width, design IDT electrode width equates with spacing.Especially, IDT electrode is metal electrode.Small size antenna adopts dipole antenna or other small size antennas.This micro metal electrode and antenna, adopt platinum-10% rhodium/zirconium dioxide (Pt-10%Rh/ZrO
2) metal material, can tolerate more than 800 DEG C high temperature.
In addition, under high temperature, the metal material of making IDT22, reflecting grating 23 and small size antenna 24 need meet high-melting-point, high oxidation resistance voltinism and high chemical inertness.This type of material mainly contains platinum (Pt), rhodium (Rh), palladium (Pd), ruthenium (Ru), iridium (Ir) and high-temperature alloy etc., each material behavior contrast is as shown in table 4, material selection platinum-10% rhodium/zirconium dioxide (Pt-10%Rh/ZrO of IDT22, reflecting grating 23 and antenna 24
2).
The metal material (～100nm) of applying under table 4 high temperature
In one embodiment of the invention, IDT22 and small size antenna 24 adopt integrated design, the electromagnetic wave signal that wireless inquiry unit 100 sends is received by IDT22 by small size antenna 24, on AlN piezoelectric membrane, inspire surface acoustic wave (SAW) and propagate to both sides, and be reflected grid 23 reflection formation acoustic resonator.Temperature variation causes the variation of resonator resonance frequency, and the SAW being reflected back converts electromagnetic wave signal to again by IDT, passes wireless inquiry unit 100 back by small size antenna 24.
When wireless inquiry unit 100 receives the new echoed signal (electromagnetic wave signal that mode of resonance SAW sensor resonant frequency changes) that surface acoustic wave resonance device 200 sends it back, processing calculates after resonance frequency, converts finishing temperature test result to and is wirelessly transmitted to display device 300.
In one embodiment of the invention, display device 300 comprises display.The ZigBee single-chip microcomputer of wireless inquiry unit 100 and the ZigBee single-chip microcomputer of display device 300 carry out wireless telecommunications.The Radio Transmission Technology that can touch in reality at present has: infrared ray IrDA (Infrared Data Association) technology, bluetooth, wireless digital broadcasting station, WiFi, GPRS, 3G, UWB and ZigBee etc.Wherein, WiFi, bluetooth (Bluetooth) and WSN/ZigBee are current 3 kinds of common short-distance wireless communication technologies.
Owing to not needing just can use to the application of radio control department ISM (the Industrial Scientific Medical) frequency range of 9.2MHz, 2.4GHz and 5.8GHz, so the carrier frequency of most systems adopts ISM band, main flow is 2.4GHz frequency range at present, and the main Radio Transmission Technology contrast of this frequency range is as shown in table 5:
As shown in Table 5: ZigBee is set up and closely controlled network facet and have congenital advantage in commercial Application.Working in the transmission technology of 2.4G frequency range, ZigBee compares with WiFi with bluetooth, and ZigBee possesses other the two extension of network not possessing, and number of network node is also far longer than 8 nodes of bluetooth and 50 nodes of WiFi, reaches more than 65000 node.The features such as add and install and use simply, use cost is low, and networking required time is short are used ZigBee to implement networking very competitive in industrial field control application.
Receive wireless signal at display device 300 ends by ZigBee single-chip microcomputer, and turn usb data line by RS232 and signal is reached to display show.
Table 5 wireless signal transmission techniques
In concrete example, as shown in Figure 5, the course of work of high temperature resistant wireless MEMS temperature-sensing system of the present invention is: wireless inquiry unit is taking ZigBee single-chip microcomputer as core processor, the electromagnetic wave signal sending is received by IDT by small size antenna, on AlN piezoelectric membrane, inspire SAW and propagate to both sides, and be reflected grid reflection formation acoustic resonator.Temperature variation causes the variation of resonator resonance frequency, the SAW being reflected back converts electromagnetic wave signal to again by IDT, pass wireless inquiry unit back by antenna, calculate after resonance frequency by signal processing, convert finishing temperature test result to and be wirelessly transmitted to display.
According to the high temperature resistant wireless MEMS temperature-sensing system of the embodiment of the present invention, surface acoustic wave resonance device is arranged on high-temperature area, and wireless inquiry unit and display device are arranged on low-temperature region.Electromagnetic wave signal is sent to surface acoustic wave resonance device by wireless inquiry unit, and the inverse piezoelectric effect of the interdigital transducer by surface acoustic wave resonance device is at surface acoustic wave of piezoelectric membrane surface activation.Surface acoustic wave is propagated along piezoelectric membrane, is reflected to form resonance by two of left and right periodicity reflecting grating, and its resonance frequency is relevant with piezoelectric membrane temperature.Then the interdigital transducer of surface acoustic wave resonance device is transformed into new electromagnetic wave signal by piezoelectric effect by surface acoustic wave again and sends to behind wireless inquiry unit, and wireless inquiry unit is sent to display device by final process result by the mode of wireless transmission and shows by processing.
In the description of this instructions, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, to the schematic statement of above-mentioned term not must for be identical embodiment or example.And, specific features, structure, material or the feature of description can one or more embodiment in office or example in suitable mode combination.In addition,, not conflicting in the situation that, those skilled in the art can carry out combination and combination by the feature of the different embodiment that describe in this instructions or example and different embodiment or example.
Although illustrated and described embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, and those of ordinary skill in the art can change above-described embodiment within the scope of the invention, amendment, replacement and modification.
Claims (10)
1. a high temperature resistant wireless MEMS temperature-sensing system, is characterized in that, comprising:
Wireless inquiry unit, for sending/receiving electromagnetic wave signal, measurement, Storage and Processing temperature data, and using described temperature data as final transducing signal;
Surface acoustic wave resonance device, described surface acoustic wave resonance device is for receiving the described electromagnetic wave signal from described wireless inquiry unit, and described electromagnetic wave signal is converted to after surface acoustic wave, again described surface acoustic wave is converted to new electromagnetic wave signal, and described new electromagnetic wave signal is fed back to described wireless inquiry unit;
Display device, for receiving and showing the temperature measurement result from described wireless inquiry unit.
2. the system as claimed in claim 1, is characterized in that, described surface acoustic wave resonance device specifically comprises:
Substrate, described substrate is made up of exotic material;
Two reflecting gratings, described reflecting grating is arranged on the upper surface of described substrate and described two reflecting gratings separate;
Interdigital transducer, described interdigital transducer is arranged on the upper surface of described substrate and between described two reflecting gratings;
Small size antenna, described small size antenna is arranged on the upper surface of described substrate, and described small size antenna is connected with described interdigital transducer, for receiving and send electromagnetic wave signal; And
Piezoelectric membrane, described piezoelectric membrane is arranged on the upper surface of described high temperature resistant substrate, and wherein, described two reflecting gratings, described interdigital transducer and described small size antenna are between described substrate and described piezoelectric membrane.
3. system as claimed in claim 2, is characterized in that, described exotic material is silit.
4. system as claimed in claim 2, is characterized in that, described piezoelectric membrane is aluminum nitride piezoelectric film.
5. system as claimed in claim 2, is characterized in that, described interdigital transducer is metal interdigital transducers.
6. the surface acoustic wave resonance device as described in claim 2-5 any one, is characterized in that, described reflecting grating is metallic reflection grid.
7. system as claimed in claim 2, it is characterized in that, determine the electrode of described interdigital transducer and the width of described reflecting grating by the interdigital spacing of the resonance frequency of described surface acoustic wave resonance device, described interdigital transducer and the velocity of propagation of described surface acoustic wave.
8. the system as claimed in claim 1, is characterized in that, described wireless inquiry unit comprises:
Core processor;
Direct Digital Frequency Synthesizers, described Direct Digital Frequency Synthesizers is connected with described core processor;
Transmitter, described transmitter is connected with described Direct Digital Frequency Synthesizers;
Diplexer, described diplexer is connected with described transmitter;
Receiver, described receiver is connected with described diplexer;
Detector, described detector is connected with described core processor with described receiver respectively;
Antenna, for sending and receiving electromagnetic wave signal.
9. system as claimed in claim 8, is characterized in that, described core processor is ZigBee single-chip microcomputer.
10. system as claimed in claim 8, it is characterized in that, described wireless inquiry unit is sent electromagnetic wave signal or is received the electromagnetic wave signal sending from described surface acoustic wave resonance device by surface acoustic wave resonance device described in described day alignment, and sends described temperature measurement result to described display device.
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| CN105606249A (en) * | 2015-09-06 | 2016-05-25 | 广东美的厨房电器制造有限公司 | Microwave heating device, wireless temperature sensing system and manufacturing method thereof |
| CN106248244A (en) * | 2016-08-04 | 2016-12-21 | 珠海市科宏电子科技有限公司 | A kind of passive and wireless real time temperature monitoring system |
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| JP2021005827A (en) * | 2019-06-27 | 2021-01-14 | 東京エレクトロン株式会社 | Antenna device and temperature detection method |
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| CN105606249A (en) * | 2015-09-06 | 2016-05-25 | 广东美的厨房电器制造有限公司 | Microwave heating device, wireless temperature sensing system and manufacturing method thereof |
| CN105606249B (en) * | 2015-09-06 | 2018-09-14 | 广东美的厨房电器制造有限公司 | Wireless temperature sensing system and its manufacturing method and microwave heating equipment |
| CN106248244A (en) * | 2016-08-04 | 2016-12-21 | 珠海市科宏电子科技有限公司 | A kind of passive and wireless real time temperature monitoring system |
| US11011834B2 (en) * | 2017-06-27 | 2021-05-18 | Florida State University Research Foundation, Inc. | Metamaterials, radomes including metamaterials, and methods |
| US11811136B2 (en) | 2017-06-27 | 2023-11-07 | Florida State University Research Foundation, Inc. | Metamaterials, radomes including metamaterials, and methods |
| CN107727266A (en) * | 2017-09-21 | 2018-02-23 | 广东电网有限责任公司惠州供电局 | A kind of MEMS temperature sensor and its switch cubicle temp measuring system |
| JP2021005827A (en) * | 2019-06-27 | 2021-01-14 | 東京エレクトロン株式会社 | Antenna device and temperature detection method |
| JP7240971B2 (en) | 2019-06-27 | 2023-03-16 | 東京エレクトロン株式会社 | Antenna device and temperature detection method |
| CN111649833A (en) * | 2020-05-15 | 2020-09-11 | 国网福建省电力有限公司三明供电公司 | Passive wireless temperature sensor |
| CN116448179A (en) * | 2023-04-19 | 2023-07-18 | 湖北工业大学 | Three-signal simultaneous sensing passive flexible sensing system and application thereof |
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