CN104183668A - Manufacturing method of solar cell unit - Google Patents
Manufacturing method of solar cell unit Download PDFInfo
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- CN104183668A CN104183668A CN201410162819.8A CN201410162819A CN104183668A CN 104183668 A CN104183668 A CN 104183668A CN 201410162819 A CN201410162819 A CN 201410162819A CN 104183668 A CN104183668 A CN 104183668A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 91
- 239000010703 silicon Substances 0.000 claims abstract description 91
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 90
- 238000000034 method Methods 0.000 claims abstract description 53
- 230000008569 process Effects 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims description 27
- 238000000576 coating method Methods 0.000 claims description 27
- 238000009826 distribution Methods 0.000 claims description 24
- 150000002500 ions Chemical class 0.000 abstract description 45
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 238000005253 cladding Methods 0.000 abstract 4
- 238000002513 implantation Methods 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 12
- 230000001133 acceleration Effects 0.000 description 9
- 238000000137 annealing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000033228 biological regulation Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229940090044 injection Drugs 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- High Energy & Nuclear Physics (AREA)
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Abstract
The invention provides a manufacturing method of a solar cell unit which is a new solar cell unit manufacturing method by the utilization of an ion injection method. One mode of the manufacturing method of the solar cell unit comprises the steps of: a preparatory process for processing a silicon layer in a first conductive form and a substrate which covers a cladding film of a silicon layer and is used for the solar cell unit; and an emitting electrode layer forming process, in which ions in a second form are irradiated to the silicon layer through the cladding film, and an emitting electrode layer is formed on one part of region on an illuminated surface side of the silicon layer. In the emitting electrode layer forming process, the energy for ion irradiation meets the condition that the stroke of the ions is the distance from the surface of the cladding film to the interface between the cladding film and the silicon layer.
Description
Technical field
The application advocates the priority of No. 2013-110595th, Japanese patent application based on May 27th, 2013 application.The full content of this application is by reference to being applied in this specification.
The present invention relates to a kind of manufacture method of solar battery cell.
Background technology
In solar cell, the semi-conducting material such as silicon absorbs the electron hole pair that the light time produces and waits by the pn knot based on being formed at inside battery the electric field producing, and electronics is to n layer side shifting, and hole is to p layer side shifting, thereby exports to external circuit as electric current.While forming pn knot or contact layer, need local concentration or the diverse processing that makes impurity.And, in order to increase as far as possible, to be absorbed in the light of inside solar energy battery and to form antireflection film in the sensitive surface side of silicon substrate.
Particularly, the known manufacture method that has solar cell, in described method, utilizes ion implantation to form after N-shaped layer (emitter layer) on the surface of p-type silicon substrate with high-concentration dopant N-shaped impurity, form antireflection film (for example, referring to Patent Document 1).
Patent documentation 1: Japanese Unexamined Patent Application Publication 2010-527163 communique
Yet while utilizing ion implantation to form emitter layer, the range of the ion being injected into becomes the position (degree of depth) that enters a certain degree from the surface of silicon substrate.Therefore, the CONCENTRATION DISTRIBUTION of depth direction of doping ion becomes from silicon substrate surface and has peak value in the degree of depth of a certain degree.The existence of the peak value of this impurity concentration, owing to hindering the movement of charge carrier, therefore becomes one of reason causing generating efficiency decline.
Summary of the invention
One of exemplary object of a mode of the present invention is to provide a kind of manufacture method of having utilized the new solar battery cell of ion implantation.
In order to solve above-mentioned problem, the manufacture method of the solar battery cell of a mode of the present invention comprises: preparatory process, the used for solar batteries substrate of preparing to have the silicon layer of the 1st conductivity type and covering the coating film of silicon layer; And emitter layer forms operation, via coating film, towards silicon layer, irradiate the ion of the 2nd conductivity type, in the region of the part of the sensitive surface side of silicon layer, form emitter layer.Emitter layer forms in operation, with the range of ion, becomes from the surface of coating film till the energy of the distance at the interface of coating film and silicon layer irradiates this ion.
Another way of the present invention is the manufacture method of solar battery cell.In the method, comprising: preparatory process, the used for solar batteries substrate of preparing to there is the silicon layer of the 1st conductivity type and covering the coating film of silicon layer; And emitter layer forms operation, via coating film, towards silicon layer, irradiate the ion of the 2nd conductivity type, in the region of the part of the sensitive surface side of silicon layer, form emitter layer.Emitter layer forms in operation, with following energy, irradiates this ion, and the peak position of the CONCENTRATION DISTRIBUTION of the depth direction of ion becomes till the scope of the depth D ± 10nm at the interface of coating film and silicon layer.
Invention effect:
According to the present invention, can realize the manufacture method of the new solar battery cell that has utilized ion implantation.
Accompanying drawing explanation
The figure of the result of doping concentration distribution when Fig. 1 means the Implantation that carries out standard.
Fig. 2 means the figure of an example of the doping concentration distribution while silicon substrate being implemented to Implantation via screen film.
Fig. 3 means the figure of an example of the doping concentration distribution of the silicon substrate inside after removing screen film.
Fig. 4 is the flow chart of the manufacture method of the related solar battery cell of the 1st execution mode.
Fig. 5 (a)～Fig. 5 (f) is the general profile chart of the semiconductor substrate in each operation of manufacture method of the related solar battery cell of the 1st execution mode.
Fig. 6 is the flow chart of the manufacture method of the related solar battery cell of the 2nd execution mode.
Fig. 7 (a)～Fig. 7 (e) is the general profile chart of the semiconductor substrate in each operation of manufacture method of the related solar battery cell of the 2nd execution mode.
Fig. 8 is the flow chart of the manufacture method of the related solar battery cell of the 3rd execution mode.
Fig. 9 (a)～Fig. 9 (e) is the general profile chart of the semiconductor substrate in each operation of manufacture method of the related solar battery cell of the 3rd execution mode.
Figure 10 (a)～Figure 10 (b) is the general profile chart of the semiconductor substrate in each operation of manufacture method of the related solar battery cell of the 3rd execution mode.
In figure: 10-silicon substrate, 12-shields film, 14-emitter layer, 16-antireflection film, 18-sensitive surface electrode, 20-backplate, 24-mask, 26-contact area, 100,200,300-solar battery cell.
Embodiment
Below, to being elaborated for implementing mode of the present invention.In addition, the structure of the following stated is illustration, and scope of the present invention is not limited in any way.And, in accompanying drawing explanation, identical important document is added to identical symbol, and suitably the repetitive description thereof will be omitted.And, in each cutaway view shown in when manufacture method is described, for ease of thickness, the size of explanation semiconductor substrate and other layer, might not represent actual size and ratio.
(the 1st execution mode)
Solar cell is designed to polytype.For example, to be solar cell guarantee the superiority with respect to the solar cell of other types by the feature of its simple structure and manufacture method, higher conversion efficiency etc. to crystallization Si.On the other hand, in order to be to obtain higher conversion efficiency in solar cell at crystallization Si, find out the optimal condition of Dui Ge technique unit extremely important to distinguishing.Wherein, think that by leading the forming of surface emitting utmost point layer causing of photoelectricity effect be very important key element, think and preferably there is following characteristics.
But current thermal diffusion method, ion implantation as general manufacture method is all difficult to meet following characteristics from its characteristic simultaneously.
(1) shallow joint.Particularly, make diffusion inside current potential further near surface.
(2) optimum doping concentration.Particularly, for the movement that contacts and pass through the majority carrier of emitter layer with electrode, emitter concentration has a certain higher concentration.But wish that from the viewpoint that combination reduces again of minority carrier concentration can not be too high.
(3) at inner side surface, do not there is special concentration peak.Particularly, the height that becomes the highfield of the barrier degree that minority carrier moves engages and is not present in specific surface more in the inner part.
(4) in most surface, having a little height engages.Particularly, there is the effect of discharging minority carrier from surface to contrary one side.
Due to can the controlled doping degree of depth, concentration, so ion implantation with respect to the feature of thermal diffusion method very superior aspect aforementioned (1), (2).On the other hand, while utilizing Implantation, the degree of depth corresponding with the acceleration energy of ion has the peak value of doping content, and becomes the distribution that doping content reduces towards superficial layer from its peak position.
The figure of the result of doping concentration distribution when Fig. 1 means the Implantation that carries out standard.In Implantation shown in Fig. 1, by phosphorus (P) as injecting ion species, take acceleration energy as 10keV, dosage be 3 * 10
15individual/cm
2condition silicon substrate is carried out to Implantation.As shown in Figure 1, according to the Implantation of this condition, doping content increases gradually from surperficial S, in the depth D place doping content apart from surperficial S approximately 0.015 μ m (15nm) left and right, becomes peak value, and doping content reduces afterwards.That is, the injection range Rp in this Implantation is 0.015 μ m (15nm) left and right.
This distribution Pr is relaxed a little by activation annealing below, but ion implantation has other room for improvement in aforementioned (3) viewpoint.And, for forming shallow joint, needing low-energy Implantation, but generally more become low-yieldly, the efficiency of transmission of beam more declines, thus productivity ratio declines.
The present invention considers these aspects, realizes the manufacture method of the new solar battery cell that has utilized ion implantation.In following mode, to considering the range of ion, before forming emitter layer, first form any one coating film of a certain thickness, via this coating film, semiconductor layer is carried out to Implantation and the method that forms the emitter layer with preferred doping concentration distribution describes.In addition, coating film is a part for covered substrate at least, without complete covered substrate.And the thickness of whole coating film is also without the same, the thickness in each region also can be different.
In present embodiment, as the coating film use screen film of silicon (semiconductor) layer.As screen film, can easily be formed at oxide-film on silicon substrate or nitride film etc. with formation such as the technology such as CVD or sputter or printing technology or coating techniques.In addition, the thickness of the screen film being generated if consider and required ion implantation energy, preferably form oxide-film or nitride film etc. with technology such as CVD or sputters.And the material of film is as long as ion can be not particularly limited in transmission, but the less material of the impact on silicon substrate inside that the shock producing during preferably by Implantation causes.
Form after screen film, adjust the energy of Implantation, so that the injection range Rp of ion becomes the near interface of screen film and silicon substrate, via screen film, silicon substrate is implemented to Implantation.Fig. 2 means the figure of an example of the doping concentration distribution while silicon substrate being implemented to Implantation via screen film.Screen film shown in Fig. 2 is that thickness is the oxide-film (SiO of about 70nm
2film).And, in the doping concentration distribution shown in Fig. 2, by phosphorus (P) as injecting ion species, take acceleration energy as 60keV, dosage be 3 * 10
15individual/cm
2condition via screen film silicon substrate is carried out to Implantation.
Doping concentration distribution Pr ' shown in Fig. 2 is near desirable the distribution at least mild surperficial S ' of silicon substrate and that little by little sharply decline towards the inner concentration of substrate.In addition, the acceleration energy of 60keV left and right is easily to export the preferred energy of large electric current as the ion implantation apparatus of one section of acceleration, even if its dosage residue that approaches half is at screen film, also no problem in productivity ratio.Therefore, as the acceleration energy that injects ion, more than can be adjusted to 40keV, more preferably more than 50keV.For example, and the acceleration energy as injecting ion, can be adjusted to below 80keV, more preferably below 70keV.In addition, the acceleration energy that injects ion is not limited to above-mentioned example, also can suitably change according to the various conditions of screen film or silicon substrate.
After having carried out Implantation with above-mentioned condition, with etchings such as buffered hydrofluoric acids, remove surperficial oxide-film.Fig. 3 is the figure of an example of the doping concentration distribution of the silicon substrate inside after removing screen film.As shown in Figure 3, the surperficial S ' of silicon substrate exposes, and in silicon substrate, is formed with desirable doping concentration distribution Pr ' '.
Fig. 4 is the flow chart of the manufacture method of the related solar battery cell of the 1st execution mode.Fig. 5 (a)～Fig. 5 (f) is the general profile chart of the semiconductor substrate in each operation of manufacture method of the related solar battery cell of the 1st execution mode.
In present embodiment, to used the situation of the monocrystalline silicon substrate of p-type to describe as semiconductor substrate, but also can be suitable for the present invention while using the silicon substrate of N-shaped or the compound semiconductor substrate of polycrystalline substrate, other p-types or N-shaped.Below, with reference to figure 4, Fig. 5, the manufacture method of the related solar battery cell of the 1st execution mode is described.
First, as shown in Fig. 5 (a), by monocrystal silicon is cut into slices to prepare the silicon substrate 10 of p-type with multiple line method.Then,, after the damage with aqueous slkali elimination by the section generation of substrate surface, on sensitive surface, form the micro concavo-convex (texture: not shown in Fig. 5 (a)) (S10 of Fig. 4) of maximum height 10 μ m left and right.By the scattering being produced by this concaveconvex structure, obtain falling into light effect, contribute to improve conversion efficiency.
Then,, as shown in Fig. 5 (b), on the surface of silicon substrate 10, form by SiO
2the screen film 12 (S12 of Fig. 4) forming Deng film (or coating film).The thickness of screen film 12 is for example 10～100nm left and right.Prepare thus to have the used for solar batteries substrate of the silicon substrate 10 of p-type (the 1st conductivity type) and the screen film 12 of the coating film that conduct covers silicon substrate 10.Then, as shown in Fig. 5 (c), via screen film 12, towards silicon substrate 10, irradiate the ion of the N-shaped (the 2nd conductivity type) that becomes the conductivity type contrary with silicon substrate 10, in the region of the part of the sensitive surface side of silicon substrate 10, form emitter layer 14 (S14 of Fig. 4).
The related emitter layer of present embodiment forms in operation, as the explanation in Fig. 2, with the range Rp of ion, become the energy irradiation ion (with reference to figure 5 (b)) of the distance at the interface (the surperficial S ' of silicon substrate 10) of film 12 and silicon substrate 10 from shielding the surperficial S of film 12 till shielding.
Then, as shown in Fig. 5 (d), remove screen film 12 (S16 of Fig. 4), in order to relax the damage of the silicon substrate 10 being produced by Implantation, activate annealing in process (S18 of Fig. 4).In addition, also can change the removal of screen film 12 and the order of activation annealing in process.And, as shown in Fig. 5 (e), on the surface of emitter layer 14, pass through formation SiN or the TiO such as CVD method
2deng antireflection film 16 (S20 of Fig. 4).The thickness of antireflection film 16 is for example 10～100nm left and right.
Then,, as shown in Fig. 5 (f), along the pattern of antireflection film 16, on the regulation region of emitter layer 14, form direct sensitive surface electrode 18 (S22 of Fig. 4).Sensitive surface electrode 18 be principal component sensitive surface electrode slurry forms the pectination of width as about 50～100 μ m by take silver (Ag) by for example printing, burning till.The height of sensitive surface electrode 18 is 10～50 μ m left and right.
And in this stage, backplate 20 also be take backplate that aluminium (Al) is principal component and prints, burns till and be formed with slurry by using.Now, the contained Al of slurry is diffused into the inside of silicon substrate 10, forms p+ layer 22 overleaf near electrode 20.Thus, can access BSF (Back Surface Field) effect.
By above operation, manufacture solar battery cell 100.In this solar battery cell 100, the peak value of the CONCENTRATION DISTRIBUTION of the ion being doped is not present in emitter layer 14, and therefore when generating, charge carrier becomes easily mobile.That is, via screen film 12, carry out Implantation, can avoid thus general doping concentration distribution common in Implantation, particularly, the distribution that doping content reduces after silicon substrate surface increases once.If be elaborated,, in the emitter layer 14 of the related solar battery cell 100 of present embodiment, doping concentration distribution is the mild concentration gradient of near surface, and is that concentration gradient becomes large desirable shape gradually along with deepening from surface.Its result, obtains the solar battery cell that generating efficiency is higher.
And, step S16 shown in transposing Fig. 4 and the processing of step S18, carried out removing while shielding film after activation annealing in process, in the high concentration layer of the dopant of the generation of interfaces of screen film and silicon substrate, by removal, shield film and be removed a part, therefore can alleviate the charge carrier that produced by high concentration layer again in conjunction with etc.
And suitably the thickness of film is shielded in selection, in ion implantation apparatus, condition that can be higher with the efficiency of transmission of ion is carried out Implantation processing, boosts productivity thus.That is, the thickness of screen film is made as to setting above (for example, more than 10nm), improve thus the acceleration energy of ion, so the injection efficiency of ion uprises.On the other hand, the thickness of screen film is made as to setting following (for example 100nm is following), reduces thus the useless ion that cannot arrive substrate and rest on screen film inside.
In addition, in present embodiment, only in the face side of solar battery cell 100 (than silicon substrate 10 abutment surface side more), be formed with passivating film (antireflection film 16), but also can form passivating film in face side and these both sides of rear side of solar battery cell 100.And in present embodiment, the situation of the face side from silicon substrate 10 being irradiated to ion is illustrated, but from rear side, is irradiating the situation of ion or also can be suitable for the present invention from the situation of face side and this both sides irradiation ion of rear side.
(the 2nd execution mode)
In the present embodiment, to by antireflection film, the situation as screen film describes.Fig. 6 is the flow chart of the manufacture method of the related solar battery cell of the 2nd execution mode.Fig. 7 (a)～Fig. 7 (e) is the general profile chart of the semiconductor substrate in each operation of manufacture method of the related solar battery cell of the 2nd execution mode.In addition, to the additional identical symbol of the constitutive requirements identical with the 1st execution mode or operation and suitably description thereof is omitted.
First, as shown in Fig. 7 (a), on the sensitive surface of the silicon substrate 10 of p-type, form texture (S10 of Fig. 6).Then,, as shown in Fig. 7 (b), on the surface of silicon substrate 10, pass through formation SiN or the TiO such as CVD method
2deng antireflection film 16 (S24 of Fig. 6).The thickness of antireflection film 16 is for example 10～100nm left and right.Thus, prepare to have the used for solar batteries substrate of the silicon substrate 10 of p-type (the 1st conductivity type) and the antireflection film 16 of the coating film that conduct covers silicon substrate 10.
Then, as shown in Fig. 7 (c), via antireflection film 16, towards silicon substrate 10, irradiate the ion of the N-shaped (the 2nd conductivity type) that becomes the conductivity type contrary with silicon substrate 10, in a part of region of the sensitive surface side of silicon substrate 10, form emitter layer 14 (S26 of Fig. 6).
The related emitter layer of present embodiment forms in operation, as the explanation in Fig. 2, with the range Rp of ion, become from the surperficial S of antireflection film 16 till antireflection film 16 irradiates ion (with reference to figure 7 (b)) with the energy of the distance at the interface (the surperficial S ' of silicon substrate 10) of silicon substrate 10
Then,, as shown in Fig. 7 (d), in order to relax the damage of the silicon substrate 10 being produced by Implantation, activate annealing in process (S28 of Fig. 6).And as described in Fig. 7 (e), the processing by the step S22 identical with the 1st execution mode forms sensitive surface electrode 18 and backplate 20.
By above operation, manufacture solar battery cell 200.This solar battery cell 200 can access the effect that the solar battery cell 100 related with the 1st execution mode is identical.In addition, as screen film, use antireflection film 16, the manufacture method of the solar battery cell 100 related with the 1st execution mode is compared and can be subdued operation thus.And owing to not producing photovoltaic reaction in antireflection film 16, so the doping concentration distribution in antireflection film 16 does not exert an influence to the movement of minority carrier.
In addition, in present embodiment, on silicon substrate 10, be directly formed with antireflection film 16, but also can between silicon substrate 10 and antireflection film 16, form other passivating films.Now, can on silicon substrate 10, form other passivating films, after other passivating film sides are irradiated ions, form antireflection film 16, also can on silicon substrate 10, form after other passivating films and antireflection film 16 from other passivating films and antireflection film 16 sides irradiation ions.
(the 3rd execution mode)
In present embodiment, as screen film, utilize antireflection film, and describe also form the situation of contact area except emitter layer.Fig. 8 is the flow chart of the manufacture method of the related solar battery cell of the 3rd execution mode.Fig. 9 (a)～Fig. 9 (e) is the general profile chart of the semiconductor substrate in each operation of manufacture method of the related solar battery cell of the 3rd execution mode.Figure 10 (a)～Figure 10 (b) is the general profile chart of the semiconductor substrate in each operation of manufacture method of the related solar battery cell of the 3rd execution mode.In addition, to the additional same-sign of the constitutive requirements identical with the respective embodiments described above or operation and suitably description thereof is omitted.
First, as shown in Fig. 9 (a), at the sensitive surface of the silicon substrate 10 of p-type, form texture (S10 of Fig. 8).Then,, as shown in Fig. 9 (b), on the surface of silicon substrate 10, pass through formation SiN or the TiO such as CVD method
2deng antireflection film 16 (S24 of Fig. 8).Then, as shown in Fig. 9 (c), via antireflection film 16, towards silicon substrate 10, irradiate the ion of the N-shaped (the 2nd conductivity type) that becomes the conductivity type contrary with silicon substrate 10, in the region of the part of the sensitive surface side of silicon substrate 10, form emitter layer 14 (S26 of Fig. 8).
Then,, as shown in Fig. 9 (d), form the mask 24 (S30 of Fig. 8) of the mode composition exposing with the regulation region of antireflection film 16.Mask 24 can be used mask or the hard mask forming by photoetch method, print process.
Then,, as shown in Fig. 9 (e), once again the sensitive surface side of substrate is injected to the N-shaped dopant that becomes the conductivity type contrary with substrate by Implantation comprehensively.Now, via not masked regulation region 16a coated, that expose antireflection film 16, to a part of regioselectivity of the emitter layer 14 in its underpart inject ion.Thus, in the regulation region of emitter layer 14, be formed with impurity concentration higher than the contact area 26 (S32 of Fig. 8) in other regions.To so a part for substrate optionally be injected to ion, and the mode that forms the contact area that impurity concentration is higher is called selection emitter.In this way, carry out Implantation after covering the part that does not need Implantation, in the regulation region of substrate, form the selectivity Implantation pattern corresponding with not concealed part thus.
Then, as shown in Figure 10 (a), from silicon substrate 10, remove mask 24 (S34 of Fig. 8), whole substrate is implemented to activate annealing in process (S36 of Fig. 8).And, as shown in Figure 10 (b), by the processing with the same step S22 of the 1st execution mode, form sensitive surface electrode 18 and backplate 20.
By above operation, manufacture solar battery cell 300.This solar battery cell 300 can access the effect that the solar battery cell related with the respective embodiments described above is identical.
In addition, in present embodiment, on silicon substrate 10, directly form antireflection film 16, but also can between silicon substrate 10 and antireflection film 16, form other passivating films.Now, can on silicon substrate 10, form other passivating films, after other passivating film sides are irradiated ions, form antireflection film 16, also can on silicon substrate 10, form after other passivating films and antireflection film 16 from other passivating films and antireflection film 16 sides irradiation ions.
The related solar battery cell of the respective embodiments described above arrives substrate via screen film 12 or antireflection film 16 by ion exposure (injection), just can realize the shallow joint on substrate top layer thus without too reducing energy.And the energy owing to too not reducing Implantation completes, therefore avoid the reduction of the efficiency of transmission of beam, and boost productivity.
In addition, the peak position of doping concentration distribution might not be in the inside of screen film 12 or antireflection film 16.For example, emitter layer forms in operation, also can irradiate ion with following energy, and the peak position of the CONCENTRATION DISTRIBUTION of the depth direction of ion becomes until shield the scope of depth D ± 10nm at the interface of film 12 or antireflection film 16 and silicon substrate 10.Thus, the peak value of the CONCENTRATION DISTRIBUTION of the ion being doped be present in interface between screen film or antireflection film 16 and silicon substrate 10 near, the charge carrier easily movement that becomes while therefore generating electricity.
Above, with reference to the respective embodiments described above, describe the present invention, but the present invention is not limited to above-mentioned execution mode, about mode appropriately combined or that replace the structure of each execution mode, is also included within the present invention.And, according to those skilled in the art's knowledge, ion implantation apparatus that can be in each execution mode, transmit in container etc. the distortion such as various design alterations are appended in execution mode, this execution mode that appends distortion is also included within scope of the present invention.
In the respective embodiments described above, to forming the situation of new coating film on silicon substrate, be illustrated, but also can process the surface of silicon substrate and surface part is gone bad as silicon oxide layer, and using that this carries out Implantation as coating film.
Claims (4)
1. a manufacture method for solar battery cell, is characterized in that, comprising:
Preparatory process, the used for solar batteries substrate of preparing to there is the silicon layer of the 1st conductivity type and covering the coating film of described silicon layer; And
Emitter layer forms operation, irradiates the ion of the 2nd conductivity type via described coating film towards described silicon layer, in the region of the part of the sensitive surface side of described silicon layer, forms emitter layer,
Described emitter layer forms in operation, with the range of described ion, becomes from the surface of described coating film till the energy of the distance at the interface of described coating film and described silicon layer irradiates this ion.
2. the manufacture method of solar battery cell according to claim 1, is characterized in that,
Described coating film is antireflection film.
3. the manufacture method of solar battery cell according to claim 1, is characterized in that, also comprises:
Removing step is removed described coating film after forming described emitter layer; And
Antireflection film forms operation, after described removing step, on described emitter layer, forms antireflection film.
4. a manufacture method for solar battery cell, is characterized in that, comprising:
Preparatory process, the used for solar batteries substrate of preparing to there is the silicon layer of the 1st conductivity type and covering the coating film of described silicon layer; And
Emitter layer forms operation, irradiates the ion of the 2nd conductivity type via described coating film towards described silicon layer, in the region of the part of the sensitive surface side of described silicon layer, forms emitter layer,
Described emitter layer forms in operation, with following energy, irradiates this ion, and the peak position of the CONCENTRATION DISTRIBUTION of the depth direction of described ion becomes till the scope of the depth D ± 10nm at the interface of described coating film and described silicon layer.
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| JP2013-110595 | 2013-05-27 | ||
| JP2013110595A JP2014229851A (en) | 2013-05-27 | 2013-05-27 | Method for manufacturing solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004039998A (en) * | 2002-07-05 | 2004-02-05 | Sharp Corp | Semiconductor device provided with light receiving element unit and manufacturing method thereof |
| CN101312222A (en) * | 2007-05-21 | 2008-11-26 | 国硕科技工业股份有限公司 | Method of manufacturing solar cell |
| CN102623312A (en) * | 2011-01-31 | 2012-08-01 | 英稳达科技股份有限公司 | Method and structure for increasing size of pn junction depletion region of solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004039998A (en) * | 2002-07-05 | 2004-02-05 | Sharp Corp | Semiconductor device provided with light receiving element unit and manufacturing method thereof |
| CN101312222A (en) * | 2007-05-21 | 2008-11-26 | 国硕科技工业股份有限公司 | Method of manufacturing solar cell |
| CN102623312A (en) * | 2011-01-31 | 2012-08-01 | 英稳达科技股份有限公司 | Method and structure for increasing size of pn junction depletion region of solar cell |
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| TW201445755A (en) | 2014-12-01 |
| JP2014229851A (en) | 2014-12-08 |
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