CN104183501A - Manufacturing method and system for thin film transistor and thin film transistor - Google Patents
Manufacturing method and system for thin film transistor and thin film transistor Download PDFInfo
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- CN104183501A CN104183501A CN201410423967.0A CN201410423967A CN104183501A CN 104183501 A CN104183501 A CN 104183501A CN 201410423967 A CN201410423967 A CN 201410423967A CN 104183501 A CN104183501 A CN 104183501A
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- oxide semiconductor
- semiconductor layer
- etch stop
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 69
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 81
- 238000000034 method Methods 0.000 claims abstract description 58
- 238000000576 coating method Methods 0.000 claims abstract description 39
- 239000011248 coating agent Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 22
- 239000011368 organic material Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 2
- 230000006870 function Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H01L29/7869—
-
- H01L27/1259—
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
The invention discloses a manufacturing method and system for a thin film transistor and the thin film transistor. By respectively forming a scanning line layer, an insulating layer and a data line layer on a driving substrate, a graph is manufactured on the portion, corresponding to the vertical position of a gate electrode image, of an oxide semiconductor layer between the data line layer and the insulating layer through organic material by means of the coating, exposing and developing process, an etching barrier layer is formed, and a source electrode, a drain electrode and a data line are manufactured on the portions, on the two sides of the etching carrier layer, of the oxide semiconductor layer. According to the scheme, the etching barrier layer made of the organic material is adopted, the process is simple, the manufacturing process is convenient, and the problems that due to the fact that in the prior art, the etching barrier layer is formed in a coating mode, the process is complex and not prone to implementation are solved.
Description
Technical field
The present invention relates to Electronic Paper field, relate in particular to a kind of thin-film transistor manufacture method, system and thin-film transistor.
Background technology
Electronic paper technology adopts electrophoretic display technology as display floater more, and its display effect approaches nature paper effect, avoids reading fatigue, yet it needs extra digital device to read, as electronic dictionary, PC etc.
At present, the display floater of Electronic Paper adopts thin-film transistor to make conventionally.
Thin-film transistor comprises sweep circuit layer, insulating barrier, data circuit layer, wherein, data circuit layer is positioned at the position of the both sides of oxide semiconductor layer top, and the mid portion of oxide semiconductor layer is outside exposed, at the source electrode on data line layer and drain electrode, carry out in etching process, the mid portion of oxide semiconductor layer is easily etched, therefore, at the mid portion of oxide semiconductor layer, is provided with etch stop layer.
At present; etch stop layer adopts mode cvd silicon oxide, the silicon nitride of plated film conventionally; adopt again coating etching protection photoresistance, exposure, development, etching rete, release etch protection photoresistance mode to form required pattern; the protection of realization to oxide semiconductor layer, to avoid that it is carried out to unnecessary etching.
Yet, adopt such scheme technique more complicated, be difficult for realizing.
Summary of the invention
In view of this, the invention provides a kind of thin-film transistor manufacture method, system and thin-film transistor, to solve in prior art, realize the protection process complexity to oxide semiconductor layer, be difficult for the problem of realization, its concrete scheme is as follows:
A thin-film transistor manufacture method, comprising:
Choose driving substrate, on described driving substrate, make gate electrode pattern, scan line, form sweep circuit layer;
Above described sweep circuit layer, make insulating barrier;
Above described insulating barrier, form oxide semiconductor layer, on the oxide semiconductor layer corresponding with described gate electrode pattern vertical position, with organic material, adopt gold-tinted technique to make figure, form etch stop layer;
On the oxide semiconductor layer of described etch stop layer both sides, make source electrode, drain electrode and data circuit, form data circuit layer.
Further, described gold-tinted technique specifically comprises: coating, exposure and developing process.
Further, the oxide of described oxide semiconductor layer is: indium zinc oxide and indium gallium zinc oxide.
Further, on described driving substrate, form gate electrode pattern and scan line, specifically comprise:
Plated metal conductive film layer on described driving substrate, adopts gold-tinted, etching mode to form gate electrode pattern and scan line.
Further, at the oxide semiconductor layer of described etch stop layer both sides, make source electrode, drain electrode, specifically comprise:
Oxide semiconductor layer in described etch stop layer both sides forms ohmic contact layer;
On described ohmic contact layer, form source electrode and drain electrode, described source electrode and drain electrode are overlapped on respectively the ohmic contact layer that is positioned at etch stop layer two ends.
A thin-film transistor manufacturing system, comprising: the first production unit, and the second production unit being connected with described the first production unit, the 3rd production unit being connected with described the second production unit, the 4th production unit being connected with described the 3rd production unit,
Described the first production unit is chosen driving substrate, on described driving substrate, makes gate electrode pattern, scan line, forms sweep circuit layer;
Described the second production unit for making insulating barrier above sweep circuit layer;
Described the 3rd production unit for forming oxide semiconductor layer above described insulating barrier;
Described the 4th production unit for adopting gold-tinted technique to make figure with organic material on the oxide semiconductor layer corresponding with described gate electrode pattern vertical position, form etch stop layer, described the 3rd production unit is made source electrode, drain electrode and data circuit on the oxide semiconductor layer of described etch stop layer both sides, forms data circuit layer.
Further, described the 4th production unit comprises: coating unit, the exposing unit being connected with described coating unit, the developing cell being connected with described exposing unit,
Described coating unit adopts coating processes to make coating with organic photo material on the oxide semiconductor layer corresponding with described gate electrode pattern vertical position;
Described exposing unit, for carrying out exposing operation in the coating of making at described coating unit, makes required figure transfer in coating by Exposure mode;
Described developing cell, for carrying out development operation on the image of making at described exposing unit, unwanted coating removal, forms etch stop layer;
Described forming unit, for make source electrode, drain electrode, data circuit on the oxide semiconductor layer of described etch stop layer both sides, forms data circuit layer.
Further, also comprise: the etching unit being connected with described the first production unit,
Described etching unit for after plated metal conductive film layer, utilizing etching mode to form gate electrode pattern, sweep circuit in described the first production unit on described driving substrate.
A thin-film transistor, comprising: the driving substrate setting gradually from the bottom to top, sweep circuit layer unit, insulating barrier unit, semiconductor layer unit and data circuit layer unit, and wherein, described sweep circuit layer unit is arranged on described driving substrate,
Described data circuit layer unit comprises: etch stop layer and data circuit layer,
Described oxide semiconductor layer is arranged at described insulating barrier top;
The image of described etch stop layer for adopting gold-tinted technique to be made on the corresponding oxide semiconductor layer of the gate electrode pattern vertical position with sweep circuit layer unit;
Described data circuit layer is that the source electrode, drain electrode, the data circuit that on the oxide semiconductor layer of described etch stop layer both sides, are made form.
Further, described etch stop layer is specially:
The image that adopts the techniques such as coating, exposure, development to be made on the corresponding oxide semiconductor layer in the gate electrode pattern numerical value position with described sweep circuit layer unit.
From technique scheme, can find out, the disclosed thin-film transistor manufacture method of the application, system and thin-film transistor, by form respectively sweep circuit layer, insulating barrier, data circuit layer on driving substrate, and oxide semiconductor layer between data circuit layer and insulating barrier, on the oxide semiconductor layer corresponding with gate electrode image vertical position, with organic material, adopt gold-tinted technique to make figure, form etch stop layer, on the oxide semiconductor layer of etch stop layer both sides, make source electrode, drain electrode, data circuit.This programme is by adopting organic material to make etch stop layer, and technique is simple, and manufacturing process is convenient, and the mode that has solved available technology adopting plated film forms the complex process that etch stop layer brings, and is difficult for the problem realizing.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the flow chart of the disclosed a kind of thin-film transistor manufacture method of the embodiment of the present invention;
Fig. 2 is the structural representation of the disclosed a kind of thin-film transistor manufacturing system of the embodiment of the present invention;
Fig. 3 is the structural representation of disclosed a kind of the 3rd production unit of the embodiment of the present invention;
Fig. 4 is the structural representation of the disclosed a kind of thin-film transistor of the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
The invention discloses a kind of thin-film transistor manufacture method, its flow chart as shown in Figure 1, comprising:
Step S11, choose driving substrate, make gate electrode pattern, scan line driving on substrate, form sweep circuit layer;
Driving plated metal conductive film layer on substrate, form gate electrode pattern, sweep circuit, be specifically as follows: driving plated metal conductive film layer on substrate, adopting gold-tinted, etching mode to form gate electrode pattern, sweep circuit.
Step S12, above sweep circuit layer, make insulating barrier;
Step S13, above insulating barrier, form oxide semiconductor layer, on the oxide semiconductor layer corresponding with gate electrode pattern vertical position, with organic material, adopt gold-tinted technique to make figure, form etch stop layer;
First, the oxide on oxide semiconductor layer is specially: indium zinc oxide and indium gallium zinc oxide.
Adopting gold-tinted technique to make figure is specially: adopt coating, exposure and developing process to make figure, form etch stop layer.
And on the oxide semiconductor layer corresponding with gate electrode pattern vertical position, make figure be mainly due to: with the position on the corresponding oxide semiconductor layer of gate electrode pattern vertical position be exposed; and other Shi Yaobei source, position electrode, drain electrode covers on oxide semiconductor layer; needn't worry that it can be subject to etching; therefore; position without the both sides on oxide semiconductor layer forms etch stop layer, and what etch stop layer was protected is the position not covered by source electrode, drain electrode in the middle of oxide semiconductor layer.
Step S14, on the oxide semiconductor layer of etch stop layer both sides, make source electrode, drain electrode, data circuit, form data circuit layer.
The process of making source electrode, drain electrode is specially:
Oxide semiconductor layer in etch stop layer both sides forms ohmic contact layer;
On ohmic contact layer, form source electrode and drain electrode insulated from each other, source electrode and drain electrode are overlapped on respectively on the ohmic contact layer that is positioned at etch stop layer two ends.
Wherein, the detailed process of formation ohmic contact layer is: the oxide semiconductor layer of etch stop layer both sides is carried out to hydrogen doping, make it become ohmic contact layer.
The disclosed thin-film transistor manufacture method of the present embodiment, by form respectively sweep circuit layer, insulating barrier, data circuit layer on driving substrate, and oxide semiconductor layer between data circuit layer and insulating barrier, on the oxide semiconductor layer corresponding with gate electrode image vertical position, with organic material, adopt gold-tinted technique to make figure, form etch stop layer, on the oxide semiconductor layer of etch stop layer both sides, make source electrode, drain electrode, data circuit.This programme is by adopting organic material to make etch stop layer, and technique is simple, and manufacturing process is convenient, and the mode that has solved available technology adopting plated film forms the complex process that etch stop layer brings, and is difficult for the problem realizing.
The present embodiment discloses a kind of thin-film transistor manufacturing system, and its structural representation as shown in Figure 2, comprising:
The first production unit 21, the second production unit 22 being connected with the first production unit 21, the 3rd production unit 23 being connected with the second production unit 22, the 4th production unit 24 being connected with the 3rd production unit.
The first production unit 21 is chosen driving substrate, on driving substrate, makes gate electrode pattern, scan line, forms sweep circuit layer.
The disclosed thin-film transistor manufacturing system of the present embodiment, can also comprise: the etching unit 24 being connected with the first production unit 21.
Etching unit 24 for after plated metal conductive film layer, utilizing etching to form at that time gate electrode pattern, sweep circuit in the first production unit 21 on driving substrate.
The second production unit 22 for making insulating barrier above sweep circuit layer.
The 3rd production unit 23 for forming oxide semiconductor layer above insulating barrier.
The 4th production unit 24 for adopting gold-tinted technique to make figure with organic material on the oxide semiconductor layer corresponding with gate electrode pattern vertical position, form etch stop layer, the 4th production unit 24 is made source electrode, drain electrode, data circuit on the oxide semiconductor layer of etch stop layer both sides, forms data circuit layer.
Oxide on oxide semiconductor layer is specifically as follows: indium zinc oxide and indium gallium zinc oxide can be also other materials, at this, it are not done to concrete restriction.
Adopting gold-tinted technique to make figure is specially: adopt coating, exposure and developing process to make figure, form etch stop layer.
Concrete, disclosed the 4th production unit 24 of the present embodiment specifically comprises: coating unit 241, the exposing unit 242 being connected with coating unit 241, the developing cell 243 being connected with exposing unit 242, the forming unit 244 being connected with developing cell 243, its concrete structure schematic diagram as shown in Figure 3.
Coating unit 241 adopts coating processes to make coating with organic photo material on the oxide semiconductor layer corresponding with gate electrode pattern vertical position;
Coating processes is generally whole or region covering, the figure of required etch stop layer directly can not be worked it out.
In the coating that exposing unit 242 is made at coating unit 241, carry out exposing operation, required figure is transferred in coating by Exposure mode.
The material applying is organic photo material, and after sensitization, characteristic changes, and required figure is transferred in coating by Exposure mode.
On the figure that developing cell 243 is made at exposing unit 242, carry out development operation, unwanted coating removal, form etch stop layer.
Forming unit 244 is made source electrode, drain electrode, data circuit on the oxide semiconductor layer of etch stop layer both sides, forms data circuit layer.
And on the oxide semiconductor layer corresponding with gate electrode pattern vertical position, make figure be mainly due to: with the position on the corresponding oxide semiconductor layer of gate electrode pattern vertical position be exposed, and other Shi Yaobei source, position electrode, drain electrode covers on oxide semiconductor layer, needn't worry that it can be subject to etching, therefore, the position without the both sides on oxide semiconductor layer forms etch stop layer.
The disclosed thin-film transistor manufacturing system of the present embodiment, by form respectively sweep circuit layer, insulating barrier, semiconductor layer and data circuit layer on driving substrate, and oxide semiconductor layer between data circuit layer and insulating barrier, the 4th production unit adopts gold-tinted technique to make figure with organic material on the oxide semiconductor layer corresponding with gate electrode image vertical position, form etch stop layer, on the oxide semiconductor layer of etch stop layer both sides, make source electrode, drain electrode, data circuit.This programme is by adopting organic material to make etch stop layer, and technique is simple, and manufacturing process is convenient, and the mode that has solved available technology adopting plated film forms the complex process that etch stop layer brings, and is difficult for the problem realizing.
The present embodiment discloses a kind of thin-film transistor, and its structural representation as shown in Figure 4, comprising:
Drive substrate 41, sweep circuit layer unit 42, insulating barrier unit 43, semiconductor layer unit 44, data circuit layer unit 45.
Drive substrate 41, sweep circuit layer unit 42, insulating barrier unit 43, semiconductor layer unit 44 and data circuit layer unit 45 arrange successively from the bottom to top, and sweep circuit layer unit 42 is arranged at and drives on substrate 41.
Line layer unit 45 specifically comprises: etch stop layer and data circuit layer.
Oxide semiconductor layer is arranged at 43 tops, insulating barrier unit, the image of etch stop layer for adopting gold-tinted technique to be made on the corresponding oxide semiconductor layer of the gate electrode pattern vertical position with sweep circuit layer unit 42; Data circuit layer is that the source electrode, drain electrode, the data circuit that above the oxide semiconductor layer of etch stop layer both sides, are made form.
Wherein, etch stop layer is specially: the image that adopts the techniques such as coating, exposure, development to be made on the corresponding oxide semiconductor layer in the gate electrode pattern position with sweep circuit layer unit 42.
The disclosed thin-film transistor of the present embodiment, by form respectively sweep circuit layer unit, insulating barrier unit, semiconductor layer unit and data circuit layer unit on driving substrate, and oxide semiconductor layer between data circuit layer and insulating barrier, on the oxide semiconductor layer corresponding with gate electrode image vertical position, with organic material, adopt gold-tinted technique to make figure, form etch stop layer, on the oxide semiconductor layer of etch stop layer both sides, make source electrode, drain electrode, data circuit.This programme is by adopting organic material to make etch stop layer, and technique is simple, and manufacturing process is convenient, and the mode that has solved available technology adopting plated film forms the complex process that etch stop layer brings, and is difficult for the problem realizing.
In this specification, each embodiment adopts the mode of going forward one by one to describe, and each embodiment stresses is the difference with other embodiment, between each embodiment identical similar part mutually referring to.For the disclosed device of embodiment, because it corresponds to the method disclosed in Example, so description is fairly simple, relevant part partly illustrates referring to method.
Professional can also further recognize, unit and the algorithm steps of each example of describing in conjunction with embodiment disclosed herein, can realize with electronic hardware, computer software or the combination of the two, for the interchangeability of hardware and software is clearly described, composition and the step of each example described according to function in the above description in general manner.These functions are carried out with hardware or software mode actually, depend on application-specific and the design constraint of technical scheme.Professional and technical personnel can specifically should be used for realizing described function with distinct methods to each, but this realization should not thought and exceeds scope of the present invention.
The software module that the method for describing in conjunction with embodiment disclosed herein or the step of algorithm can directly use hardware, processor to carry out, or the combination of the two is implemented.Software module can be placed in the storage medium of any other form known in random asccess memory (RAM), internal memory, read-only memory (ROM), electrically programmable ROM, electrically erasable ROM, register, hard disk, moveable magnetic disc, CD-ROM or technical field.
Above-mentioned explanation to the disclosed embodiments, makes professional and technical personnel in the field can realize or use the present invention.To the multiple modification of these embodiment, will be apparent for those skilled in the art, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a thin-film transistor manufacture method, is characterized in that, comprising:
Choose driving substrate, on described driving substrate, make gate electrode pattern, scan line, form sweep circuit layer;
Above described sweep circuit layer, make insulating barrier;
Above described insulating barrier, form oxide semiconductor layer, on the oxide semiconductor layer corresponding with described gate electrode pattern vertical position, with organic material, adopt gold-tinted technique to make figure, form etch stop layer;
On the oxide semiconductor layer of described etch stop layer both sides, make source electrode, drain electrode, data circuit, form data circuit layer.
2. method according to claim 1, is characterized in that, described gold-tinted technique specifically comprises: coating, exposure and developing process.
3. method according to claim 1, is characterized in that, the oxide of described oxide semiconductor layer is: indium zinc oxide and indium gallium zinc oxide.
4. method according to claim 1, is characterized in that, on described driving substrate, forms gate electrode pattern and scan line, specifically comprises:
Plated metal conductive film layer on described driving substrate, adopts gold-tinted, etching mode to form gate electrode pattern and scan line.
5. method according to claim 1, is characterized in that, at the oxide semiconductor layer of described etch stop layer both sides, makes source electrode and drain electrode, specifically comprises:
Oxide semiconductor layer in described etch stop layer both sides forms ohmic contact layer;
On described ohmic contact layer, form source electrode and drain electrode, described source electrode and drain electrode are overlapped on respectively the ohmic contact layer that is positioned at etch stop layer two ends.
6. a thin-film transistor manufacturing system, is characterized in that, comprising: the first production unit, the second production unit being connected with described the first production unit, the 3rd production unit being connected with described the second production unit, the 4th production unit being connected with described the 3rd production unit
Described the first production unit is chosen driving substrate, on described driving substrate, makes gate electrode pattern, scan line, forms sweep circuit layer;
Described the second production unit for making insulating barrier above sweep circuit layer;
Described the 3rd production unit for forming oxide semiconductor layer above described insulating barrier;
Described the 4th production unit for adopting gold-tinted technique to make figure with organic material on the oxide semiconductor layer corresponding with described gate electrode pattern vertical position, form etch stop layer, described the 4th production unit is made source electrode, drain electrode and data circuit on the oxide semiconductor layer of described etch stop layer both sides, forms data circuit layer.
7. system according to claim 6, is characterized in that, described the 4th production unit comprises: coating unit, the exposing unit being connected with described coating unit, the developing cell being connected with described exposing unit, and the forming unit being connected with described developing cell,
Described coating unit adopts coating processes to make coating with organic photo material on the oxide semiconductor layer corresponding with described gate electrode pattern vertical position;
Described exposing unit, for carrying out exposing operation in the coating of making at described coating unit, makes required figure transfer in coating by Exposure mode;
Described developing cell, for carrying out development operation on the figure of making at described exposing unit, unwanted coating removal, forms etch stop layer;
Described forming unit, for make source electrode, drain electrode and data circuit on the oxide semiconductor layer of described etch stop layer both sides, forms data circuit layer.
8. system according to claim 6, is characterized in that, also comprises: the etching unit being connected with described the first production unit,
Described etching unit for after plated metal conductive film layer, utilizing etching mode to form gate electrode pattern, sweep circuit in described the first production unit on described driving substrate.
9. a thin-film transistor, it is characterized in that, comprising: the driving substrate setting gradually from the bottom to top, sweep circuit layer unit, insulating barrier unit, semiconductor layer unit and data circuit layer unit, wherein, described sweep circuit layer unit is arranged on described driving substrate
Described data circuit layer unit comprises: etch stop layer and data circuit layer,
Described oxide semiconductor layer is arranged at top, described insulating barrier unit;
The image of described etch stop layer for adopting gold-tinted technique to be made on the corresponding oxide semiconductor layer of the gate electrode pattern vertical position with sweep circuit layer unit;
Described data circuit layer is that the source electrode, drain electrode and the data circuit that on the oxide semiconductor layer of described etch stop layer both sides, are made form.
10. thin-film transistor according to claim 9, is characterized in that, described etch stop layer is specially:
The image that adopts coating, exposure and developing process to be made on the corresponding oxide semiconductor layer in the gate electrode pattern numerical value position with described sweep circuit layer unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410423967.0A CN104183501A (en) | 2014-08-26 | 2014-08-26 | Manufacturing method and system for thin film transistor and thin film transistor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410423967.0A CN104183501A (en) | 2014-08-26 | 2014-08-26 | Manufacturing method and system for thin film transistor and thin film transistor |
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| CN104183501A true CN104183501A (en) | 2014-12-03 |
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| CN201410423967.0A Pending CN104183501A (en) | 2014-08-26 | 2014-08-26 | Manufacturing method and system for thin film transistor and thin film transistor |
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| JP2000357797A (en) * | 1999-06-15 | 2000-12-26 | Toshiba Corp | Manufacture of thin-film transistor |
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2014
- 2014-08-26 CN CN201410423967.0A patent/CN104183501A/en active Pending
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| JP2000357797A (en) * | 1999-06-15 | 2000-12-26 | Toshiba Corp | Manufacture of thin-film transistor |
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