CN104178149A - Hafnium oxide luminescent film, preparing method thereof and electroluminescent device - Google Patents
Hafnium oxide luminescent film, preparing method thereof and electroluminescent device Download PDFInfo
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- CN104178149A CN104178149A CN201310195251.5A CN201310195251A CN104178149A CN 104178149 A CN104178149 A CN 104178149A CN 201310195251 A CN201310195251 A CN 201310195251A CN 104178149 A CN104178149 A CN 104178149A
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Abstract
The invention belongs to the field of photoelectric materials, and discloses hafnium oxide luminescent film, a preparing method thereof and an electroluminescent device. The general chemical formula of the luminescent film is Hf<1-x>O2:xM<3+>, wherein HfO2 is a substrate, the M<3+> is a rare earth ion, is an activating ion in the luminescent film and is adopted as the main luminescent center in the luminescent film, the M is selected from Ce, Pr, Nd or Ho, and the x is 0.01-0.05. In an electroluminescence (EL) spectrum of the luminescent film adopted as a luminescent layer, a strong luminescent peak is formed at 620 nm.
Description
Technical field
The present invention relates to field of photovoltaic materials, relate in particular to a kind of hafnium oxide light-emitting film and preparation method thereof.The invention still further relates to a kind of electroluminescent device of this hafnium oxide light-emitting film as luminescent layer that use.
Background technology
Thin-film electroluminescent displays (TFELD), due to its active illuminating, total solids, the advantage such as shock-resistant, reaction is fast, visual angle is large, Applicable temperature is wide, operation is simple, has caused and paid close attention to widely, and development rapidly.
Rear-earth-doped transition metal oxide class luminescent material is the popular research material as LED fluorescent material, and the luminescent properties of hafnium oxide doping system, also in continuous lifting, still has not yet to see report using rear-earth-doped hafnium oxide material as the research of light-emitting film.
Summary of the invention
Based on the problems referred to above, problem to be solved by this invention is to provide a kind of hafnium oxide light-emitting film.
Technical scheme of the present invention is as follows:
A kind of hafnium oxide light-emitting film, its chemical general formula is: Hf
1-xo
2: xM
3+; Wherein, HfO
2matrix, M
3+being rare earth ion, is the active ions in light-emitting film, serves as main luminescence center in light-emitting film, and M is selected from Ce, Pr, and Nd or Ho, the value of x is 0.01～0.05.
Described hafnium oxide light-emitting film, preferably, the value of x is 0.03.
The present invention also provides the preparation method of above-mentioned hafnium oxide light-emitting film, adopts chemical Vapor deposition process (MOCVD), and processing step comprises:
To clean, dried ito glass substrate sends in filming equipment reaction chamber, and enclosed reaction chamber, then vacuumizes processing to reaction chamber, the vacuum tightness of controlling reaction chamber is 1.0 × 10
-2pa～1.0 × 10
-3pa; Then at 700 DEG C, substrate is heat-treated 10～30 minutes, temperature is reduced to 250～650 DEG C subsequently, prepares depositing light-emitting film;
Open the rotating machine of filming equipment, regulating the rotating speed of substrate bracket is 50～1000 revs/min, then passes into the argon carrier that contains reactant gases, and the airshed of argon carrier is 5～15sccm, and then pass into the oxygen that flow is 10～200sccm, start depositing light-emitting film; Wherein, reactant gases is that mol ratio is the dicarbapentaborane hafnium (Hf (CO) of 1-x:x
2) and three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) organic source of M ((DPM)
3m); The volume ratio of reactant gases and argon gas is (0.0001～0.01): 1; The effect of oxygen is the oxygen element running off in plated film preparation process target in order to compensate, and reduces the radiationless deathnium that oxygen room forms, and increases luminous efficiency;
In the time that the thickness of light-emitting film is 80～300nm, off-response gas and argon carrier, continue logical oxygen, and question response chambers temp is down to room temperature, obtains hafnia light-emitting film, and the chemical general formula of this hafnia light-emitting film is: Hf
1-xo
2: xM
3+; Wherein, HfO
2matrix, M
3+being rare earth ion, is the active ions in light-emitting film, serves as main luminescence center in light-emitting film, and M is selected from Ce, Pr, and Nd or Ho, the value of x is 0.01～0.05.
The preparation method of described hafnium oxide light-emitting film, preferably, the cleaning of ito glass substrate, drying process are: successively use toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, last nitrogen is air-dry dry.
The preparation method of described hafnium oxide light-emitting film, preferably, vacuumizes processing to reaction chamber and adopts mechanical pump and molecular pump to carry out.
The preparation method of described hafnium oxide light-emitting film, preferably, the vacuum tightness of reaction chamber is 4.0 × 10
-3pa.
The preparation method of described hafnium oxide light-emitting film, preferably, the rotating speed of substrate bracket is 300 revs/min, and the airshed of argon carrier is 10ccm, and the flow that passes into of oxygen is 120sccm.
The preparation method of described hafnium oxide light-emitting film, preferably, the thickness of light-emitting film is 150nm.
The present invention also provides a kind of electroluminescent device, comprises glass substrate, ito anode, light-emitting film layer and Ag cathode layer, and wherein, light-emitting film layer adopts above-mentioned hafnium oxide light-emitting film.
The preparation technology of electroluminescent device is as follows:
To clean, dried ito glass substrate sends in filming equipment reaction chamber, and enclosed reaction chamber, then vacuumizes processing to reaction chamber, the vacuum tightness of controlling reaction chamber is 1.0 × 10
-2pa～1.0 × 10
-3pa; Then at 700 DEG C, substrate is heat-treated 10～30 minutes, temperature is reduced to 250～650 DEG C subsequently, prepares depositing light-emitting film;
Open the rotating machine of filming equipment, regulating the rotating speed of substrate bracket is 50～1000 revs/min, then passes into the argon carrier that contains reactant gases, and the airshed of argon carrier is 5～15sccm, and then pass into the oxygen that flow is 10～200sccm, start depositing light-emitting film; Wherein, reactant gases is that mol ratio is dicarbapentaborane hafnium and three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) the organic source of M of 1-x:x; The volume ratio of reactant gases and argon gas is (0.0001～0.01): 1;
In the time that the thickness of light-emitting film is 80～300nm, off-response gas and argon carrier, continue logical oxygen, and question response chambers temp is down to room temperature, obtains hafnia light-emitting film, and the chemical general formula of this hafnia light-emitting film is: Hf
1-xo
2: xM
3+; Wherein, HfO
2matrix, M
3+being rare earth ion, is the active ions in light-emitting film, serves as main luminescence center in light-emitting film, and M is selected from Ce, Pr, and Nd or Ho, the value of x is 0.01～0.05;
Ito glass substrate containing light-emitting film and Ag nanoparticle are moved in vacuum evaporation equipment, play the Ag layer of cathodic process at light-emitting film surface evaporation one deck;
After above-mentioned steps completes, make electroluminescent device.
The present invention adopts MOCVD equipment, prepares rear-earth-doped hafnium oxide HfO
2: xM
3+light-emitting film, obtains, in the electroluminescence spectrum (EL) of film, having very strong glow peak in 620nm position.
Brief description of the drawings
Fig. 1 is the EL spectrum of the hafnium oxide light-emitting film that makes of embodiment 1;
Fig. 2 is the structural representation of the electroluminescent device that makes of embodiment 12.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in further detail.
Embodiment 1
Substrate is the ito glass that Nan Bo company buys, and successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 4.0 × 10 with mechanical pump and molecular pump
-3pa; Then substrate is carried out to 700 DEG C of thermal treatments 20 minutes, then temperature is reduced to 500 DEG C.Open rotating machine, regulating the rotating speed of substrate bracket is 300 revs/min, passes into dicarbapentaborane hafnium Hf (CO)
2with three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) cerium source (DPM)
3the carrier gas Ar gas of Ce, flow is 10sccm, and molar flow, than for 0.97:0.03, passes into oxygen, and flow is 120sccm, and wherein the volume ratio of reactant gases and argon gas is 0.0045:1, starts the deposition of film.The thickness of film is deposited into 150nm, closes organic source and carrier gas, continues logical oxygen, and temperature drops to below 100 DEG C, takes out sample Hf
0.97o
2: 0.03Ce
3+light-emitting film.
Fig. 1 is the EL spectrum of the hafnium oxide light-emitting film that makes of embodiment 1; Obtain, in the electroluminescence spectrum (EL) of film, having very strong glow peak in 620nm position.
Embodiment 2
Substrate is the ito glass that Nan Bo company buys, and successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 1.0 × 10 with mechanical pump and molecular pump
-3pa; Then substrate is carried out to 700 DEG C of thermal treatments 10 minutes, then temperature is reduced to 250 DEG C.Open rotating machine, regulating the rotating speed of substrate bracket is 50 revs/min, passes into dicarbapentaborane hafnium Hf (CO)
2with three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) cerium source (DPM)
3the carrier gas Ar gas of Ce, flow is 10sccm.Molar flow, than for 0.94:0.06, passes into oxygen, and flow is 10sccm, and wherein the volume ratio of reactant gases and argon gas is 0.0001:1, starts the deposition of film.The thickness of film is deposited into 80nm, closes organic source and carrier gas, continues logical oxygen, and temperature drops to below 100 DEG C, takes out sample Hf
0.94o
2: 0.06Ce
3+light-emitting film.
Embodiment 3
Substrate is the ito glass that Nan Bo company buys, and successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 1.0 × 10 with mechanical pump and molecular pump
-2pa; Then substrate is carried out to 700 DEG C of thermal treatments 30 minutes, then temperature is reduced to 650 DEG C.Open rotating machine, regulating the rotating speed of substrate bracket is 1000 revs/min, passes into dicarbapentaborane hafnium Hf (CO)
2with three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) cerium source (DPM)
3the carrier gas Ar gas of Ce, flow is 10sccm.Molar flow, than for 0.99:0.01, passes into oxygen, and flow is 200sccm, and wherein the volume ratio of reactant gases and argon gas is 0.001:1, starts the deposition of film.The thickness of film is deposited into 300nm, closes organic source and carrier gas, continues logical oxygen, and temperature drops to below 100 DEG C, takes out sample Hf
0.99o
2: 0.01Ce
3+light-emitting film.
Embodiment 4
Substrate is the ito glass that Nan Bo company buys, and successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 4.0 × 10 with mechanical pump and molecular pump
-3pa; Then substrate is carried out to 700 DEG C of thermal treatments 20 minutes, then temperature is reduced to 500 DEG C.Open rotating machine, regulating the rotating speed of substrate bracket is 300 revs/min, passes into dicarbapentaborane hafnium Hf (CO)
2with three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) praseodymium source (DPM)
3the carrier gas Ar gas of Pr, flow is 10sccm, and molar flow, than for 0.97:0.03, passes into oxygen, and flow is 120sccm, and wherein the volume ratio of reactant gases and argon gas is 0.006:1, starts the deposition of film.The thickness of film is deposited into 150nm, closes organic source and carrier gas, continues logical oxygen, and temperature drops to below 100 DEG C, takes out sample Hf
0.97o
2: 0.03Pr
3+light-emitting film.
Embodiment 5
Substrate is the ito glass that Nan Bo company buys, and successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 1.0 × 10 with mechanical pump and molecular pump
-3pa; Then substrate is carried out to 700 DEG C of thermal treatments 10 minutes, then temperature is reduced to 250 DEG C.Open rotating machine, regulating the rotating speed of substrate bracket is 50 revs/min, passes into dicarbapentaborane hafnium Hf (CO)
2with three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) praseodymium source (DPM)
3the carrier gas Ar gas of Pr, flow is 10sccm.Molar flow, than for 0.94:0.06, passes into oxygen, and flow is 10sccm, and wherein the volume ratio of reactant gases and argon gas is 0.0085:1, starts the deposition of film.The thickness of film is deposited into 80nm, closes organic source and carrier gas, continues logical oxygen, and temperature drops to below 100 DEG C, takes out sample Hf
0.94o
2: 0.06Pr
3+light-emitting film.
Embodiment 6
Substrate is the ito glass that Nan Bo company buys, and successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 1.0 × 10 with mechanical pump and molecular pump
-2pa; Then substrate is carried out to 700 DEG C of thermal treatments 30 minutes, then temperature is reduced to 650 DEG C.Open rotating machine, regulating the rotating speed of substrate bracket is 1000 revs/min, passes into dicarbapentaborane hafnium Hf (CO)
2with three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) praseodymium source (DPM)
3the carrier gas Ar gas of Pr, flow is 10sccm.Molar flow, than for 0.99:0.01, passes into oxygen, and flow is 200sccm, and wherein the volume ratio of reactant gases and argon gas is 0.0095:1, starts the deposition of film.The thickness of film is deposited into 300nm, closes organic source and carrier gas, continues logical oxygen, and temperature drops to below 100 DEG C, takes out sample Hf
0.99o
2: 0.01Pr
3+light-emitting film.
Embodiment 7
Substrate is the ito glass that Nan Bo company buys, and successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 4.0 × 10 with mechanical pump and molecular pump
-3pa; Then substrate is carried out to 700 DEG C of thermal treatments 20 minutes, then temperature is reduced to 500 DEG C.Open rotating machine, regulating the rotating speed of substrate bracket is 300 revs/min, passes into dicarbapentaborane hafnium Hf (CO)
2with three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) neodymium source (DPM)
3the carrier gas Ar gas of Nd, flow is 10sccm, and molar flow, than for 0.97:0.03, passes into oxygen, and flow is 120sccm, and wherein the volume ratio of reactant gases and argon gas is the deposition that 0.002:1 starts film.The thickness of film is deposited into 150nm, closes organic source and carrier gas, continues logical oxygen, and temperature drops to below 100 DEG C, takes out sample Hf
0.97o
2: 0.03Nd
3+light-emitting film.
Embodiment 8
Substrate is the ito glass that Nan Bo company buys, and successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 1.0 × 10 with mechanical pump and molecular pump
-3pa; Then substrate is carried out to 700 DEG C of thermal treatments 10 minutes, then temperature is reduced to 250 DEG C.Open rotating machine, regulating the rotating speed of substrate bracket is 50 revs/min, passes into dicarbapentaborane hafnium Hf (CO)
2with three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) neodymium source (DPM)
3the carrier gas Ar gas of Nd, flow is 10sccm.Molar flow, than for 0.94:0.06, passes into oxygen, and flow is 10sccm, and wherein the volume ratio of reactant gases and argon gas is 0.003:1, starts the deposition of film.The thickness of film is deposited into 80nm, closes organic source and carrier gas, continues logical oxygen, and temperature drops to below 100 DEG C, takes out sample Hf
0.94o
2: 0.06Nd
3+light-emitting film.
Embodiment 9
Substrate is the ito glass that Nan Bo company buys, and successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 1.0 × 10 with mechanical pump and molecular pump
-2pa; Then substrate is carried out to 700 DEG C of thermal treatments 30 minutes, then temperature is reduced to 650 DEG C.Open rotating machine, regulating the rotating speed of substrate bracket is 1000 revs/min, passes into dicarbapentaborane hafnium Hf (CO)
2with three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) neodymium source (DPM)
3the carrier gas Ar gas of Nd, flow is 10sccm.Molar flow, than for 0.99:0.01, passes into oxygen, and flow is 200sccm, and wherein the volume ratio of reactant gases and argon gas is 0.004:1, starts the deposition of film.The thickness of film is deposited into 300nm, closes organic source and carrier gas, continues logical oxygen, and temperature drops to below 100 DEG C, takes out sample Hf
0.99o
2: 0.01Nd
3+light-emitting film.
Embodiment 10
Substrate is the ito glass that Nan Bo company buys, and successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 4.0 × 10 with mechanical pump and molecular pump
-3pa; Then substrate is carried out to 700 DEG C of thermal treatments 20 minutes, then temperature is reduced to 500 DEG C.Open rotating machine, regulating the rotating speed of substrate bracket is 300 revs/min, passes into dicarbapentaborane hafnium Hf (CO)
2with three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) holmium source (DPM)
3the carrier gas Ar gas of Ho, flow is 10sccm, and molar flow, than for 0.97:0.03, passes into oxygen, and flow is 120sccm, and wherein the volume ratio of reactant gases and argon gas is 0.0055:1, starts the deposition of film.The thickness of film is deposited into 150nm, closes organic source and carrier gas, continues logical oxygen, and temperature drops to below 100 DEG C, takes out sample Hf
0.97o
2: 0.03Ho
3+light-emitting film.
Embodiment 11
Substrate is the ito glass that Nan Bo company buys, and successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 1.0 × 10 with mechanical pump and molecular pump
-3pa; Then substrate is carried out to 700 DEG C of thermal treatments 10 minutes, then temperature is reduced to 250 DEG C.Open rotating machine, regulating the rotating speed of substrate bracket is 50 revs/min, passes into dicarbapentaborane hafnium Hf (CO)
2with three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) holmium source (DPM)
3the carrier gas Ar gas of Ho, flow is 10sccm.Molar flow, than for 0.94:0.06, passes into oxygen, and flow is 10sccm, and wherein the volume ratio of reactant gases and argon gas is 0.008:1, starts the deposition of film.The thickness of film is deposited into 80nm, closes organic source and carrier gas, continues logical oxygen, and temperature drops to below 100 DEG C, takes out sample Hf
0.94o
2: 0.06Ho
3+light-emitting film.
Embodiment 12
Originally be embodied as electroluminescent device, as shown in Figure 2, wherein, 1 is glass substrate; 2 is ITO transparent conductive film, as anode; 3 is luminescent material thin-film layer; 4 is Ag layer, as negative electrode.
Substrate is the ito glass that Nan Bo company buys, and successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 1.0 × 10 with mechanical pump and molecular pump
-2pa; Then substrate is carried out to 700 DEG C of thermal treatments 30 minutes, then temperature is reduced to 650 DEG C.Open rotating machine, regulating the rotating speed of substrate bracket is 1000 revs/min, passes into dicarbapentaborane hafnium Hf (CO)
2with three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) holmium source (DPM)
3the carrier gas Ar gas of Ho, flow is 10sccm.Molar flow, than for 0.99:0.01, passes into oxygen, and flow is 200sccm, and wherein the volume ratio of reactant gases and argon gas is 0.0065:1, starts the deposition of film.The thickness of film is deposited into 300nm, closes organic source and carrier gas, continues logical oxygen, and temperature drops to below 100 DEG C, takes out sample Hf
0.99o
2: 0.01Ho
3+light-emitting film.Then light-emitting film is moved in vacuum evaporation equipment, evaporation one deck Ag on light-emitting film, as negative electrode.
Should be understood that, the above-mentioned statement for preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, and scope of patent protection of the present invention should be as the criterion with claims.
Claims (10)
1. a hafnium oxide light-emitting film, is characterized in that, its chemical general formula is: Hf
1-xo
2: xM
3+; Wherein, HfO
2matrix, M
3+being rare earth ion, is the active ions in light-emitting film, serves as main luminescence center in light-emitting film, and M is selected from Ce, Pr, and Nd or Ho, the value of x is 0.01～0.05.
2. hafnium oxide light-emitting film according to claim 1, is characterized in that, the value of x is 0.03.
3. hafnium oxide light-emitting film according to claim 1, is characterized in that, comprises the hafnium oxide light-emitting film of following chemical formula:
Hf
0.97O
2:0.03Ce
3+；Hf
0.94O
2:0.06Ce
3+；Hf
0.99O
2:0.01Ce
3+；Hf
0.97O
2:0.03Pr
3+；Hf
0.94O
2:0.06Pr
3+；Hf
0.99O
2:0.01Pr
3+；Hf
0.97O
2:0.03Nd
3+；Hf
0.94O
2:0.06Nd
3+；Hf
0.99O
2:0.01Nd
3+；Hf
0.97O
2:0.03Ho
3+；Hf
0.94O
2:0.06Ho
3+；Hf
0.99O
2:0.01Ho
3+。
4. a preparation method for hafnium oxide light-emitting film, is characterized in that, comprises the steps:
To clean, dried ito glass substrate sends in filming equipment reaction chamber, and enclosed reaction chamber, then vacuumizes processing to reaction chamber, the vacuum tightness of controlling reaction chamber is 1.0 × 10
-2pa～1.0 × 10
-3pa; Then at 700 DEG C, substrate is heat-treated 10～30 minutes, temperature is reduced to 250～650 DEG C subsequently, prepares depositing light-emitting film;
Open the rotating machine of filming equipment, regulating the rotating speed of substrate bracket is 50～1000 revs/min, then passes into the argon carrier that contains reactant gases, and the airshed of argon carrier is 5～15sccm, and then pass into the oxygen that flow is 10～200sccm, start depositing light-emitting film; Wherein, reactant gases is that mol ratio is dicarbapentaborane hafnium and three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) the organic source of M of 1-x:x; The volume ratio of reactant gases and argon gas is (0.0001～0.01): 1;
In the time that the thickness of light-emitting film is 80～300nm, off-response gas and argon carrier, continue logical oxygen, and question response chambers temp is down to room temperature, obtains hafnia light-emitting film, and the chemical general formula of this hafnia light-emitting film is: Hf
1-xo
2: xM
3+;
Wherein, HfO
2matrix, M
3+being rare earth ion, is the active ions in light-emitting film, serves as main luminescence center in light-emitting film, and M is selected from Ce, Pr, and Nd or Ho, the value of x is 0.01～0.05.
5. the preparation method of hafnium oxide light-emitting film according to claim 4, it is characterized in that, the cleaning of ito glass substrate, drying process is: successively use toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, last nitrogen is air-dry dry.
6. the preparation method of hafnium oxide light-emitting film according to claim 4, is characterized in that, reaction chamber is vacuumized to process adopt mechanical pump and molecular pump to carry out.
7. the preparation method of hafnium oxide light-emitting film according to claim 4, is characterized in that, the vacuum tightness of reaction chamber is 4.0 × 10
-3pa.
8. the preparation method of hafnium oxide light-emitting film according to claim 4, is characterized in that, the rotating speed of substrate bracket is 300 revs/min, and the airshed of argon carrier is 10ccm, and the flow that passes into of oxygen is 120sccm.
9. the preparation method of hafnium oxide light-emitting film according to claim 4, is characterized in that, the thickness of light-emitting film is 150nm.
10. an electroluminescent device, comprises glass substrate, ito anode, light-emitting film layer and Ag cathode layer, it is characterized in that, light-emitting film layer adopts the arbitrary described hafnium oxide light-emitting film of right 1～4.
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| CN108533992A (en) * | 2018-04-19 | 2018-09-14 | 绍兴文理学院 | A kind of selective radiation light source |
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