CN103820112A - Praseodymium doped tungstate light-emitting film as well as preparation method and electroluminescence device thereof - Google Patents
Praseodymium doped tungstate light-emitting film as well as preparation method and electroluminescence device thereof Download PDFInfo
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- CN103820112A CN103820112A CN201210468438.3A CN201210468438A CN103820112A CN 103820112 A CN103820112 A CN 103820112A CN 201210468438 A CN201210468438 A CN 201210468438A CN 103820112 A CN103820112 A CN 103820112A
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Abstract
The invention belongs to the field of light-emitting films, and discloses a praseodymium doped tungstate light-emitting film as well as a preparation method and an electroluminescence device thereof. The light-emitting film has the molecular formula as follows: MeWO4:xPr<3+>, wherein MeWO4 is a substrate; Pr<3+> is an activated ion and is used as a light-emitting center in the film; Me is an element of Mg, Ca, Sr or Ba; the value of x ranges from 0.01 to 0.08. The praseodymium doped tungstate light-emitting film disclosed by the invention has a strong light-emitting peak at the position of 611nm in an electroluminescence spectrum (EL).
Description
Technical field
The present invention relates to light-emitting film field, relate in particular to a kind of praseodymium doping luminous tungstate film and preparation method thereof.The invention still further relates to a kind of electroluminescent device luminescent device, the material of this device luminescent layer adopts praseodymium doping luminous tungstate film.
Background technology
Thin-film electroluminescent displays (TFELD), due to its active illuminating, total solids, the advantage such as shock-resistant, reaction is fast, visual angle is large, Applicable temperature is wide, operation is simple, has caused and paid close attention to widely, and development rapidly.
For the spectrum under chromium-doped zinc tungstate room temperature and low temperature and laser property, a lot of research workers have had many bibliographical informations.But, be prepared into electroluminescent film with this type of material as luminescent material, have not yet to see report.
Summary of the invention
Based on the problems referred to above, problem to be solved by this invention is to provide a kind of praseodymium doping luminous tungstate film.
Technical scheme of the present invention is as follows:
A kind of praseodymium doping luminous tungstate film, has general molecular formula: MeWO
4: xPr
3+; Wherein, MeWO
4matrix, Pr
3+be active ions, in film, serve as luminescence center; Me is element M g, Ca, Sr or Ba, the value 0.01 ~ 0.08 of x; Preferably, the value 0.05 of x.
The preparation method of above-mentioned praseodymium (Pr) Doped Tungsten hydrochlorate codoped chloroboric acid salt light-emitting film, comprises step:
(1), the indium oxide tin glass cleaning up is placed in the vacuum reaction chamber of chemical vapor depsotition equipment, vacuumize processing; Wherein:
Indium oxide tin glass comprises substrate of glass, and sputter at glass surface, play the tin indium oxide (be called for short ITO) of conductive anode effect, therefore, indium oxide tin glass is called again ito glass;
Preferably, ito glass is placed into before vacuum cavity, also needs it to carry out clean: successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning ito glass, then, nitrogen is air-dry;
(2), indium oxide tin glass is heat-treated 10 ~ 30 minutes at 700 ℃, be then cooled to 250 ~ 650 ℃;
(3), open the rotating machine of chemical vapor depsotition equipment, regulating the rotating speed of substrate bracket is 50 ~ 1000 revs/min, passes into subsequently and contains (C
5h
5)
2me, W (CO)
6and Pr (DPM)
3) carrier gas Ar gas, airshed is 5 ~ 15sccm; Then pass into oxygen, airshed is 120sccm, starts the deposition of film; Wherein, (C
5h
5)
2me, W (CO)
6and Pr (DPM)
3) mol ratio be 1:1:0.01 ~ 0.08; Preferably, 1:1:0.05;
After above-mentioned filming technology completes, make described praseodymium doping luminous tungstate film at the indium tin oxide surfaces of indium oxide tin glass, this light-emitting film has general molecular formula: MeWO
4: xPr
3+; Wherein, MeWO
4matrix, Pr
3+be active ions, in film, serve as luminescence center;
In above-mentioned formula, Me is element M g, Ca, Sr or Ba, the value 0.01 ~ 0.08 of x, preferably, the value 0.05 of x.
The preparation method of described praseodymium doping luminous tungstate film, preferably, in step (1), described in vacuumize to process and adopt mechanical pump and molecular pump to carry out, and the vacuum tightness of vacuum cavity is 1.0 × 10
-3pa ~ 1.0 × 10
-5pa; More have choosing, described in vacuumize after processing, the vacuum tightness of vacuum cavity is 4.0 × 10
-4pa.
The preparation method of described praseodymium doping luminous tungstate film, preferably, in step (2), temperature when described cooling is processed is 500 ℃.
The preparation method of described praseodymium doping luminous tungstate film, preferably, in step (3), the speed of rotation of described substrate bracket is 300 revs/min; Carrier gas Ar airshed is 10sccm; Oxygen flow is 120sccm.
The present invention also provides a kind of electroluminescent device, this device comprises indium oxide tin glass, is layered in the indium tin oxide surfaces light-emitting film layer of indium oxide tin glass, and be layered in the negative electrode on light-emitting film layer surface, and it is characterized in that, the material of described light-emitting film layer has general molecular formula: MeWO
4: xPr
3+; Wherein, MeWO
4matrix, Pr
3+be active ions, in film, serve as luminescence center; Me is element M g, Ca, Sr or Ba, the value 0.01 ~ 0.08 of x, preferably, the value 0.05 of x.
Praseodymium doping luminous tungstate film provided by the invention, in its electroluminescence spectrum (EL), has very strong glow peak in 611nm position.
Accompanying drawing explanation
Fig. 1 is the EL spectrogram of the light-emitting film that makes of embodiment 1;
Fig. 2 is the structural representation of the electroluminescent device that makes of embodiment 12.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in further detail.
Embodiment 1
1, successively with toluene, acetone and the ultrasonic each cleaning ito glass of ethanol 5 minutes, then clean with distilled water flushing, after the air-dry rear ito glass of nitrogen, send in the vacuum reaction chamber of chemical vapor depsotition equipment; Then with mechanical pump and molecular pump, the vacuum tightness of cavity is evacuated to 4.0 × 10
-3pa;
2, then, ito glass is carried out to 700 ℃ of thermal treatments 20 minutes, then temperature is reduced to 500 ℃;
3, open the rotating machine of chemical vapor depsotition equipment, regulating the rotating speed of substrate bracket is 300 revs/min, and (mol ratio is respectively 1:1:0.05's (C to pass into three kinds of organic sources
5h
5)
2mg, W (CO)
6and Pr (DPM)
3) carrier gas Ar gas, flow is 10sccm; Pass into subsequently oxygen, flow is 120sccm, starts the deposition of film;
By regulating the flow in several organic sources to control the content of praseodymium in tungstate matrix, the thickness of simultaneously controlling film is deposited into 150nm, closes organic source and carrier gas, continue logical oxygen, temperature is down to room temperature, takes out sample, be praseodymium doping luminous tungstate film, molecular formula is MgWO
4: 0.05Pr
3+.
Fig. 1 is the EL spectrogram of the light-emitting film that makes of embodiment 1; As shown in Figure 1, in the electroluminescence spectrum (EL) of praseodymium doping luminous tungstate film, there is very strong glow peak in 611nm position.
Embodiment 2
1, successively with toluene, acetone and the ultrasonic each cleaning ito glass of ethanol 5 minutes, then clean with distilled water flushing, after the air-dry rear ito glass of nitrogen, send in the vacuum reaction chamber of chemical vapor depsotition equipment; Then with mechanical pump and molecular pump, the vacuum tightness of cavity is evacuated to 1.0 × 10
-3pa;
2, then, ito glass is carried out to 700 ℃ of thermal treatments 10 minutes, then temperature is reduced to 250 ℃;
3, open the rotating machine of chemical vapor depsotition equipment, regulating the rotating speed of substrate bracket is 50 revs/min, and (mol ratio is respectively 1:1:0.08's (C to pass into three kinds of organic sources
5h
5)
2mg, W (CO)
6and Pr (DPM)
3) carrier gas Ar gas, flow is 10sccm; Pass into subsequently oxygen, flow is 10sccm, starts the deposition of film;
By regulating the flow in several organic sources to control the content of praseodymium in tungstate matrix, the thickness of simultaneously controlling film is deposited into 80nm, closes organic source and carrier gas, continue logical oxygen, temperature is down to room temperature, takes out sample, be praseodymium doping luminous tungstate film, molecular formula is MgWO
4: 0.08Pr
3+.
Embodiment 3
1, successively with toluene, acetone and the ultrasonic each cleaning ito glass of ethanol 5 minutes, then clean with distilled water flushing, after the air-dry rear ito glass of nitrogen, send in the vacuum reaction chamber of chemical vapor depsotition equipment; Then with mechanical pump and molecular pump, the vacuum tightness of cavity is evacuated to 1.0 × 10
-2pa;
2, then, ito glass is carried out to 700 ℃ of thermal treatments 30 minutes, then temperature is reduced to 650 ℃;
3, open the rotating machine of chemical vapor depsotition equipment, regulating the rotating speed of substrate bracket is 1000 revs/min, and (mol ratio is respectively 1:1:0.01's (C to pass into three kinds of organic sources
5h
5)
2mg, W (CO)
6and Pr (DPM)
3) carrier gas Ar gas, flow is 10sccm; Pass into subsequently oxygen, flow is 200sccm, starts the deposition of film;
By regulating the flow in several organic sources to control the content of praseodymium in tungstate matrix, the thickness of simultaneously controlling film is deposited into 300nm, closes organic source and carrier gas, continue logical oxygen, temperature is down to room temperature, takes out sample, be praseodymium doping luminous tungstate film, molecular formula is MgWO
4: 0.01Pr
3+.
Embodiment 4
1, successively with toluene, acetone and the ultrasonic each cleaning ito glass of ethanol 5 minutes, then clean with distilled water flushing, after the air-dry rear ito glass of nitrogen, send in the vacuum reaction chamber of chemical vapor depsotition equipment; Then with mechanical pump and molecular pump, the vacuum tightness of cavity is evacuated to 4.0 × 10
-3pa;
2, then, ito glass is carried out to 700 ℃ of thermal treatments 20 minutes, then temperature is reduced to 500 ℃;
3, open the rotating machine of chemical vapor depsotition equipment, regulating the rotating speed of substrate bracket is 300 revs/min, and (mol ratio is respectively 1:1:0.05's (C to pass into three kinds of organic sources
5h
5)
2ca, W (CO)
6and Pr (DPM)
3) carrier gas Ar gas, flow is 10sccm; Pass into subsequently oxygen, flow is 120sccm, starts the deposition of film;
By regulating the flow in several organic sources to control the content of praseodymium in tungstate matrix, the thickness of simultaneously controlling film is deposited into 150nm, closes organic source and carrier gas, continue logical oxygen, temperature is down to room temperature, takes out sample, be praseodymium doping luminous tungstate film, molecular formula is CaWO
4: 0.05Pr
3+.
Embodiment 5
1, successively with toluene, acetone and the ultrasonic each cleaning ito glass of ethanol 5 minutes, then clean with distilled water flushing, after the air-dry rear ito glass of nitrogen, send in the vacuum reaction chamber of chemical vapor depsotition equipment; Then with mechanical pump and molecular pump, the vacuum tightness of cavity is evacuated to 1.0 × 10
-3pa;
2, then, ito glass is carried out to 700 ℃ of thermal treatments 10 minutes, then temperature is reduced to 250 ℃;
3, open the rotating machine of chemical vapor depsotition equipment, regulating the rotating speed of substrate bracket is 50 revs/min, and (mol ratio is respectively 1:1:0.08's (C to pass into three kinds of organic sources
5h
5)
2ca, W (CO)
6and Pr (DPM)
3) carrier gas Ar gas, flow is 10sccm; Pass into subsequently oxygen, flow is 10sccm, starts the deposition of film;
By regulating the flow in several organic sources to control the content of praseodymium in tungstate matrix, the thickness of simultaneously controlling film is deposited into 80nm, closes organic source and carrier gas, continue logical oxygen, temperature is down to room temperature, takes out sample, be praseodymium doping luminous tungstate film, molecular formula is CaWO
4: 0.08Pr
3+.
Embodiment 6
1, successively with toluene, acetone and the ultrasonic each cleaning ito glass of ethanol 5 minutes, then clean with distilled water flushing, after the air-dry rear ito glass of nitrogen, send in the vacuum reaction chamber of chemical vapor depsotition equipment; Then with mechanical pump and molecular pump, the vacuum tightness of cavity is evacuated to 1.0 × 10
-2pa;
2, then, ito glass is carried out to 700 ℃ of thermal treatments 30 minutes, then temperature is reduced to 650 ℃;
3, open the rotating machine of chemical vapor depsotition equipment, regulating the rotating speed of substrate bracket is 1000 revs/min, and (mol ratio is respectively 1:1:0.01's (C to pass into three kinds of organic sources
5h
5)
2ca, W (CO)
6and Pr (DPM)
3) carrier gas Ar gas, flow is 10sccm; Pass into subsequently oxygen, flow is 200sccm, starts the deposition of film;
By regulating the flow in several organic sources to control the content of praseodymium in tungstate matrix, the thickness of simultaneously controlling film is deposited into 200nm, closes organic source and carrier gas, continue logical oxygen, temperature is down to room temperature, takes out sample, be praseodymium doping luminous tungstate film, molecular formula is CaWO
4: 0.01Pr
3+.
Embodiment 7
1, successively with toluene, acetone and the ultrasonic each cleaning ito glass of ethanol 5 minutes, then clean with distilled water flushing, after the air-dry rear ito glass of nitrogen, send in the vacuum reaction chamber of chemical vapor depsotition equipment; Then with mechanical pump and molecular pump, the vacuum tightness of cavity is evacuated to 4.0 × 10
-3pa;
2, then, ito glass is carried out to 700 ℃ of thermal treatments 20 minutes, then temperature is reduced to 500 ℃;
3, open the rotating machine of chemical vapor depsotition equipment, regulating the rotating speed of substrate bracket is 300 revs/min, and (mol ratio is respectively 1:1:0.05's (C to pass into three kinds of organic sources
5h
5)
2sr, W (CO)
6and Pr (DPM)
3) carrier gas Ar gas, flow is 10sccm; Pass into subsequently oxygen, flow is 120sccm, starts the deposition of film;
By regulating the flow in several organic sources to control the content of praseodymium in tungstate matrix, the thickness of simultaneously controlling film is deposited into 150nm, closes organic source and carrier gas, continue logical oxygen, temperature is down to room temperature, takes out sample, be praseodymium doping luminous tungstate film, molecular formula is SrWO
4: 0.05Pr
3+.
Embodiment 8
1, successively with toluene, acetone and the ultrasonic each cleaning ito glass of ethanol 5 minutes, then clean with distilled water flushing, after the air-dry rear ito glass of nitrogen, send in the vacuum reaction chamber of chemical vapor depsotition equipment; Then with mechanical pump and molecular pump, the vacuum tightness of cavity is evacuated to 1.0 × 10
-3pa;
2, then, ito glass is carried out to 700 ℃ of thermal treatments 10 minutes, then temperature is reduced to 250 ℃;
3, open the rotating machine of chemical vapor depsotition equipment, regulating the rotating speed of substrate bracket is 50 revs/min, and (mol ratio is respectively 1:1:0.08's (C to pass into three kinds of organic sources
5h
5)
2sr, W (CO)
6and Pr (DPM)
3) carrier gas Ar gas, flow is 10sccm; Pass into subsequently oxygen, flow is 10sccm, starts the deposition of film;
By regulating the flow in several organic sources to control the content of praseodymium in tungstate matrix, the thickness of simultaneously controlling film is deposited into 80nm, closes organic source and carrier gas, continue logical oxygen, temperature is down to room temperature, takes out sample, be praseodymium doping luminous tungstate film, molecular formula is SrWO
4: 0.08Pr
3+.
Embodiment 9
1, successively with toluene, acetone and the ultrasonic each cleaning ito glass of ethanol 5 minutes, then clean with distilled water flushing, after the air-dry rear ito glass of nitrogen, send in the vacuum reaction chamber of chemical vapor depsotition equipment; Then with mechanical pump and molecular pump, the vacuum tightness of cavity is evacuated to 1.0 × 10
-2pa;
2, then, ito glass is carried out to 700 ℃ of thermal treatments 30 minutes, then temperature is reduced to 650 ℃;
3, open the rotating machine of chemical vapor depsotition equipment, regulating the rotating speed of substrate bracket is 1000 revs/min, and (mol ratio is respectively 1:1:0.01's (C to pass into three kinds of organic sources
5h
5)
2sr, W (CO)
6and Pr (DPM)
3) carrier gas Ar gas, flow is 10sccm; Pass into subsequently oxygen, flow is 200sccm, starts the deposition of film;
By regulating the flow in several organic sources to control the content of praseodymium in tungstate matrix, the thickness of simultaneously controlling film is deposited into 200nm, closes organic source and carrier gas, continue logical oxygen, temperature is down to room temperature, takes out sample, be praseodymium doping luminous tungstate film, molecular formula is SrWO
4: 0.01Pr
3+.
Embodiment 10
1, successively with toluene, acetone and the ultrasonic each cleaning ito glass of ethanol 5 minutes, then clean with distilled water flushing, after the air-dry rear ito glass of nitrogen, send in the vacuum reaction chamber of chemical vapor depsotition equipment; Then with mechanical pump and molecular pump, the vacuum tightness of cavity is evacuated to 4.0 × 10
-3pa;
2, then, ito glass is carried out to 700 ℃ of thermal treatments 20 minutes, then temperature is reduced to 500 ℃;
3, open the rotating machine of chemical vapor depsotition equipment, regulating the rotating speed of substrate bracket is 300 revs/min, and (mol ratio is respectively 1:1:0.05's (C to pass into three kinds of organic sources
5h
5)
2ba, W (CO)
6and Pr (DPM)
3) carrier gas Ar gas, flow is 10sccm; Pass into subsequently oxygen, flow is 120sccm, starts the deposition of film;
By regulating the flow in several organic sources to control the content of praseodymium in tungstate matrix, the thickness of simultaneously controlling film is deposited into 150nm, closes organic source and carrier gas, continue logical oxygen, temperature is down to room temperature, takes out sample, be praseodymium doping luminous tungstate film, molecular formula is BaWO
4: 0.05Pr
3+.
Embodiment 11
1, successively with toluene, acetone and the ultrasonic each cleaning ito glass of ethanol 5 minutes, then clean with distilled water flushing, after the air-dry rear ito glass of nitrogen, send in the vacuum reaction chamber of chemical vapor depsotition equipment; Then with mechanical pump and molecular pump, the vacuum tightness of cavity is evacuated to 1.0 × 10
-3pa;
2, then, ito glass is carried out to 700 ℃ of thermal treatments 10 minutes, then temperature is reduced to 250 ℃;
3, open the rotating machine of chemical vapor depsotition equipment, regulating the rotating speed of substrate bracket is 50 revs/min, and (mol ratio is respectively 1:1:0.08's (C to pass into three kinds of organic sources
5h
5)
2ba, W (CO)
6and Pr (DPM)
3) carrier gas Ar gas, flow is 10sccm; Pass into subsequently oxygen, flow is 10sccm, starts the deposition of film;
By regulating the flow in several organic sources to control the content of praseodymium in tungstate matrix, the thickness of simultaneously controlling film is deposited into 80nm, closes organic source and carrier gas, continue logical oxygen, temperature is down to room temperature, takes out sample, be praseodymium doping luminous tungstate film, molecular formula is BaWO
4: 0.08Pr
3+.
Embodiment 12
This embodiment is electroluminescent device, and as shown in Figure 2, it comprises substrate 1/ conductive anode layer 2/ luminescent layer 3/ cathode layer 4 stacking gradually; Wherein, substrate is glass, and the material of conductive anode layer is ITO, and the material of luminescent layer is that molecular formula is BaWO
4: 0.01Pr
3+light-emitting film; The material of cathode layer is Ag.
The preparation technology of this electroluminescent device is as follows:
1, successively with toluene, acetone and the ultrasonic each cleaning ito glass of ethanol 5 minutes, then clean with distilled water flushing, after the air-dry rear ito glass of nitrogen, send in the vacuum reaction chamber of chemical vapor depsotition equipment; Then with mechanical pump and molecular pump, the vacuum tightness of cavity is evacuated to 1.0 × 10
-2pa;
2, then, ito glass is carried out to 700 ℃ of thermal treatments 30 minutes, then temperature is reduced to 650 ℃;
3, open the rotating machine of chemical vapor depsotition equipment, regulating the rotating speed of substrate bracket is 1000 revs/min, and (mol ratio is respectively 1:1:0.01's (C to pass into three kinds of organic sources
5h
5)
2ba, W (CO)
6and Pr (DPM)
3) carrier gas Ar gas, flow is 10sccm; Pass into subsequently oxygen, flow is 200sccm, starts the deposition of film;
By regulating the flow in several organic sources to control the content of praseodymium in tungstate matrix, the thickness of simultaneously controlling film is deposited into 200nm, closes organic source and carrier gas, continue logical oxygen, temperature is down to room temperature, takes out sample, be praseodymium doping luminous tungstate film, molecular formula is BaWO
4: 0.01Pr
3+.
4, evaporation one deck Ag on light-emitting film again then, as negative electrode;
After processing step completes, make electroluminescent device.
Should be understood that, the above-mentioned statement for preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, and scope of patent protection of the present invention should be as the criterion with claims.
Claims (10)
1. a praseodymium doping luminous tungstate film, is characterized in that having general molecular formula: MeWO
4: xPr
3+; Wherein, MeWO
4matrix, Pr
3+be active ions, in film, serve as luminescence center; Me is element M g, Ca, Sr or Ba, the value 0.01 ~ 0.08 of x.
2. praseodymium doping luminous tungstate film according to claim 1, is characterized in that the value 0.05 of x.
3. a preparation method for praseodymium doping luminous tungstate film, is characterized in that, comprises step:
(1), the indium oxide tin glass cleaning up is placed in the vacuum reaction chamber of chemical vapor depsotition equipment, vacuumize processing;
(2), indium oxide tin glass is heat-treated 10 ~ 30 minutes at 700 ℃, be then cooled to 250 ~ 650 ℃;
(3), open the rotating machine of chemical vapor depsotition equipment, regulating the rotating speed of substrate bracket is 50 ~ 1000 revs/min, passes into subsequently and contains (C
5h
5)
2me, W (CO)
6and Pr (DPM)
3) carrier gas Ar gas, airshed is 5 ~ 15sccm; Then pass into oxygen, airshed is 120sccm, starts the deposition of film; Wherein, (C
5h
5)
2me, W (CO)
6and Pr (DPM)
3) mol ratio be 1:1:0.01 ~ 0.08;
After above-mentioned filming technology completes, make described praseodymium doping luminous tungstate film at the indium tin oxide surfaces of indium oxide tin glass, this light-emitting film has general molecular formula: MeWO
4: xPr
3+; Wherein, MeWO
4matrix, Pr
3+be active ions, in film, serve as luminescence center;
In above-mentioned formula, Me is element M g, Ca, Sr or Ba, the value 0.01 ~ 0.08 of x.
4. the preparation method of praseodymium according to claim 3 doping luminous tungstate film, is characterized in that, in step (1), described in vacuumize to process and adopt mechanical pump and molecular pump to carry out, and the vacuum tightness of vacuum cavity is 1.0 × 10
-3pa ~ 1.0 × 10
-5pa.
5. the preparation method of praseodymium according to claim 4 doping luminous tungstate film, is characterized in that, in step (1), described in vacuumize after processing, the vacuum tightness of vacuum cavity is 4.0 × 10
-4pa.
6. the preparation method of praseodymium doping luminous tungstate film according to claim 3, is characterized in that, in step (2), temperature when described cooling is processed is 500 ℃.
7. the preparation method of praseodymium doping luminous tungstate film according to claim 3, is characterized in that, in step (3), the speed of rotation of described substrate bracket is 300 revs/min; Carrier gas Ar airshed is 10sccm; Oxygen flow is 120sccm.
8. the preparation method of praseodymium doping luminous tungstate film according to claim 3, is characterized in that the value 0.05 of x.
9. an electroluminescent device, this device comprises indium oxide tin glass, is layered in the indium tin oxide surfaces light-emitting film layer of indium oxide tin glass, and be layered in the negative electrode on light-emitting film layer surface, and it is characterized in that, the material of described light-emitting film layer has general molecular formula: MeWO
4: xPr
3+; Wherein, MeWO
4matrix, Pr
3+be active ions, in film, serve as luminescence center; Me is element M g, Ca, Sr or Ba, the value 0.01 ~ 0.08 of x.
10. electroluminescent device according to claim 9, is characterized in that, the value 0.05 of x.
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|---|---|---|---|---|
| CN104312585A (en) * | 2014-09-18 | 2015-01-28 | 陕西科技大学 | Near ultraviolet light excited tungstate red fluorescence material and its preparation method |
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2012
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104312585A (en) * | 2014-09-18 | 2015-01-28 | 陕西科技大学 | Near ultraviolet light excited tungstate red fluorescence material and its preparation method |
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Application publication date: 20140528 |