CN104175639B - Anti-dazzle tabula rasa and preparation method thereof - Google Patents
Anti-dazzle tabula rasa and preparation method thereof Download PDFInfo
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- CN104175639B CN104175639B CN201310190094.9A CN201310190094A CN104175639B CN 104175639 B CN104175639 B CN 104175639B CN 201310190094 A CN201310190094 A CN 201310190094A CN 104175639 B CN104175639 B CN 104175639B
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Abstract
A kind of anti-dazzle tabula rasa, including the substrate stacked gradually, articulamentum and scattering layer, the material of described articulamentum is silicon dioxide, described scattering layer includes silica substrate and is dispersed in the scattering particles in described silica substrate, and the material of described scattering particles is titanium dioxide, zirconium dioxide, tantalum pentoxide or hafnium oxide.The resistance to elevated temperatures of above-mentioned anti-dazzle tabula rasa is preferable.The present invention also provides for the preparation method of a kind of anti-dazzle tabula rasa.
Description
Technical field
The present invention relates to a kind of anti-dazzle tabula rasa and preparation method thereof.
Background technology
Dazzle is a kind of serious light pollution, can cause the sudden Whiteout of people, vision illusion, Light-headedness, some occasion can be accidents caused, additionally, when brightness is excessive, cornea and crystalline lens can produce light scattering damage eyes, and vision, identification, speed etc. decline regarding function, simultaneously, dazzle also has an impact effect for psychology, it affects the emotion of people, causes work efficiency low, causes bigger mental pressure.
Development along with society, people's living standard improves constantly, requirement to quality of lighting is more and more higher, anti-dazzle is one problem that must solve of high-quality illuminating engineering, illumination anti-dazzle is also done a lot of work by each big illumination, light fixture manufacturer, mainly designed by rational illumination scheme for illuminating engineering, anti-dazzle light value is controlled, in the acceptable scope of people, to realize anti-dazzle.The most general way uses anti-glare lampshade exactly.Current anti-glare lampshade predominantly PC, PMMA material added diffusant and reached the effect of diffusing light, thus realized anti-dazzle.But PC, PMMA material is used in general lighting field more, the illumination occasion that temperature is higher is then limited to the use of this kind of lampshade.
Summary of the invention
Based on this, it is necessary to provide the preferable anti-dazzle tabula rasa of a kind of resistance to elevated temperatures and the preparation method of anti-dazzle tabula rasa.
A kind of anti-dazzle tabula rasa, including the substrate stacked gradually, articulamentum and scattering layer, the material of described articulamentum is silicon dioxide, described scattering layer includes silica substrate and is dispersed in the scattering particles in described silica substrate, and the material of described scattering particles is titanium dioxide, zirconium dioxide, tantalum pentoxide or hafnium oxide.
Wherein in an embodiment, the particle diameter of described scattering particles is 20nm～100nm.
Wherein in an embodiment, the material of described substrate is inorganic transparent material.
Wherein in an embodiment, the thickness of described articulamentum is 50nm～200nm, and the thickness of described scattering layer is 400nm～1000nm.
Wherein in an embodiment, in described scattering layer titanium dioxide weight/mass percentage composition be 2.65%～13.25%；In described scattering layer, the weight/mass percentage composition of zirconium dioxide is 2.39%～11.95%；In described scattering layer, the weight/mass percentage composition of tantalum pentoxide is 13.1%～65.3%；In described scattering layer, the weight/mass percentage composition of hafnium oxide is 6.7%～33.3%.
The preparation method of a kind of anti-dazzle tabula rasa anti-dazzle plate, comprises the following steps:
Preparing articulamentum at substrate surface magnetron sputtering, the material of described articulamentum is silicon dioxide；And
Scattering layer is prepared on the surface of described articulamentum, scattering layer includes silica substrate and is dispersed in the scattering particles in described silica substrate, the material of described scattering particles is titanium dioxide, zirconium dioxide, tantalum pentoxide or hafnium oxide, described silica substrate is prepared by magnetron sputtering, and described scattering particles is prepared by filtering cathode radian technology.
Wherein in an embodiment, further comprised the steps of: before substrate surface magnetron sputtering prepares articulamentum first 150 DEG C～450 DEG C, substrate is carried out plasma clean under argon gas atmosphere.
Wherein in an embodiment, the particle diameter of described scattering particles is 20nm～100nm.
Wherein in an embodiment, when magnetron sputtering prepares described articulamentum, temperature is 150 DEG C～450 DEG C, and vacuum is 0.05Pa～3Pa, and substrate bias is negative 500V～negative 1000V, is passed through the mixed gas that gas is oxygen and argon.
Wherein in an embodiment, when preparing scattering layer, surface is formed the substrate of articulamentum be placed in the vacuum chamber being provided with magnetic controlled sputtering target and filtering cathode electric arc target and carry out, the material of described magnetic controlled sputtering target is silicon, the material of described filtering cathode electric arc target is Ti, Zr, Ta or Hf, temperature is 150 DEG C～450 DEG C, substrate bias is negative 100V～negative 200V, vacuum is 0.05Pa～3Pa, magnetic controlled sputtering target is powered by 5kW～30kW magnetic control power supply, and the electric current of filtering cathode electric arc target is 40A～110A.
Light can be scattered by above-mentioned anti-dazzle tabula rasa and preparation method thereof, silica substrate in scattering layer and the scattering particles being dispersed in silica substrate, effectively prevents dazzle；By preparing articulamentum and scattering layer on the surface of substrate, articulamentum makes anti-dazzle tabula rasa have preferable mechanical performance；In scattering layer, the resistance to elevated temperatures of silica substrate and scattering particles material is all preferable, so that anti-dazzle tabula rasa has preferable resistance to elevated temperatures.
Accompanying drawing explanation
Fig. 1 is the structural representation of the anti-dazzle tabula rasa of an embodiment；
Fig. 2 is the flow chart of the preparation method of the anti-dazzle tabula rasa of an embodiment；
Fig. 3 is the structure schematic diagram of the preparation facilities for preparing scattering layer of an embodiment.
Detailed description of the invention
With specific embodiment, anti-dazzle tabula rasa and preparation method thereof is further elucidated with below in conjunction with the accompanying drawings.
Referring to Fig. 1, the anti-dazzle tabula rasa 100 of an embodiment, including the substrate 10 stacked gradually, articulamentum 20 and scattering layer 30.
Substrate 10 generally tabular.Substrate 10 is made of clear material, and the most in the present embodiment, substrate 10 is made up of inorganic transparent material, and such as glass, substrate 10 can also have resistant to elevated temperatures organic transparent material to make the most in other embodiments.Substrate 10 generally tabular.It should be noted that the shape of substrate 10 is not limited to tabular, it is also possible to for other geometries, anti-dazzle tabula rasa 100 is such as applied to when light fixture uses as antidazzle cap substrate 10 to be designed as hemispherical, arc or other are irregularly shaped.
Articulamentum 20 is formed at one of them surface of substrate 10.The material of articulamentum 20 is silicon dioxide (SiO2).The thickness of articulamentum 20 is 50nm～200nm.
Scattering layer 30 is formed at the surface of articulamentum 20.Scattering layer 30 includes silica substrate 32 and the scattering particles 34 being dispersed in silica substrate 32.Silica substrate 32 has compared higher visible light transmissivity, oxidation resistance temperature and more preferable anti-scratch performance with traditional Merlon (PC), polymethyl methacrylate (PMMA).The material of scattering particles 34 is titanium dioxide (TiO2), zirconium dioxide (ZrO2), tantalum pentoxide (Ta2O5) or hafnium oxide (HfO2).The particle diameter of scattering particles 34 is 20nm～100nm.The thickness of scattering layer 30 is 400nm～1000nm.When the material of scattering particles 34 is titanium dioxide, in scattering layer 30, the weight/mass percentage composition of titanium dioxide is 2.65%～13.25%；When the material of scattering particles 34 is zirconium dioxide, in scattering layer 30, the weight/mass percentage composition of zirconium dioxide is 2.39%～11.95%；When the material of scattering particles 34 is tantalum pentoxide, in scattering layer 30, the weight/mass percentage composition of tantalum pentoxide is 13.1%～65.3%；When the material of scattering particles 34 is hafnium oxide, in scattering layer 30, the weight/mass percentage composition of hafnium oxide is 6.7%～33.3%.
Above-mentioned anti-dazzle tabula rasa 100, light can be scattered by silica substrate 32 in scattering layer 30 and the scattering particles 34 being dispersed in silica substrate 32, there is relatively haze (up to 60%), light percent of pass (up to 90%), effectively prevent dazzle；By preparing articulamentum 20 and scattering layer 30 on the surface of substrate 10, at the bottom of articulamentum 20 linker 10 and scattering layer 30, improve the adhesion between scattering layer 30 and substrate 10 so that anti-dazzle tabula rasa 100 has preferable mechanical performance；In scattering layer 30, the resistance to elevated temperatures of silica substrate 32 and scattering particles 34 material is all preferable, so that anti-dazzle tabula rasa 100 has preferable resistance to elevated temperatures and weather resistance；The scattering layer 30 of the anti-dazzle tabula rasa 100 simultaneously prepared has good wearability (coefficient of friction is less than 0.6), high temperature resistant (high anti-oxidation temperature 800 DEG C) and good weatherability and ensure that the long-time stability of anti-dazzle tabula rasa 100, decreases and changes the cost input that anti-dazzle accessory is brought.
It should be noted that anti-dazzle tabula rasa 100 is not limited to be applied to light fixture, it is also possible to for photo frame mounting, screen etc..
Please refer to Fig. 2, the preparation method of the anti-dazzle tabula rasa of an embodiment, it is characterised in that comprise the following steps:
Step S110, preparing articulamentum 20 at substrate 10 surface magnetic control sputtering, the material of articulamentum 20 is silicon dioxide.
Substrate 10 generally tabular.Substrate 10 is made of clear material, and the most in the present embodiment, substrate 10 is made up of inorganic transparent material, and such as glass, substrate 10 can also have resistant to elevated temperatures organic transparent material to make the most in other embodiments.Substrate 10 generally tabular.It should be noted that the shape of substrate 10 is not limited to tabular, it is also possible to for other geometries, anti-dazzle tabula rasa 100 is such as applied to when light fixture uses as antidazzle cap substrate 10 to be designed as hemispherical, arc or other are irregularly shaped.
Preferably, before substrate 10 surface magnetic control sputtering prepares articulamentum 20 first 150 DEG C～450 DEG C, substrate 10 is carried out plasma clean under argon gas atmosphere.
Preferably, when magnetron sputtering prepares articulamentum 20, temperature is 150 DEG C～450 DEG C, and vacuum is 0.05Pa～3Pa, and substrate bias is negative 500V～negative 1000V, is passed through the mixed gas that gas is oxygen and argon, and target is silicon.Oxygen is 1:9～9:1 with the mol ratio of argon in the mixed gas of argon with oxygen.
Preferably, the thickness of articulamentum 20 is 50nm～200nm.
Step S120, prepare scattering layer 30 on the surface of articulamentum 20, scattering layer 30 includes silica substrate 32 and the scattering particles 34 being dispersed in silica substrate 32, the material of scattering particles 34 is titanium dioxide, zirconium dioxide, tantalum pentoxide or hafnium oxide, silica substrate 32 is prepared by magnetron sputtering, and scattering particles 34 is prepared by filtering cathode radian technology.
Preferably, the particle diameter of scattering particles 34 is 20nm～100nm.
Preferably, the thickness of scattering layer 30 is 400nm～1000nm.
Preferably, when the material of scattering particles 34 is titanium dioxide, in scattering layer 30, the weight/mass percentage composition of titanium dioxide is 2.65%～13.25%；When the material of scattering particles 34 is zirconium dioxide, in scattering layer 30, the weight/mass percentage composition of zirconium dioxide is 2.39%～11.95%；When the material of scattering particles 34 is tantalum pentoxide, in scattering layer 30, the weight/mass percentage composition of tantalum pentoxide is 13.1%～65.3%；When the material of scattering particles 34 is hafnium oxide, in scattering layer 30, the weight/mass percentage composition of hafnium oxide is 6.7%～33.3%.
Preferably, when preparing scattering layer 30, surface is formed the substrate 10 of articulamentum 20 be placed in the vacuum chamber being provided with magnetic controlled sputtering target and filtering cathode electric arc target and carry out, the material of magnetic controlled sputtering target is silicon (Si), and the material of filtering cathode electric arc target is Ti, Zr, Ta or Hf, and temperature is 150 DEG C～450 DEG C, substrate bias is negative 100V～negative 200V, vacuum is 0.05Pa～3Pa, and magnetic controlled sputtering target is powered by 5kW～30kW magnetic control power supply, and the electric current of filtering cathode electric arc target is 40A～110A.
In this step, Si is combined generation silicon dioxide with oxygen, and the metal ion of filtering cathode electric arc target is evaporated from target simultaneously, generates oxide with oxygen reaction thus prepares scattering layer on the surface of articulamentum 20.Owing to arc discharge produces height ionization, high-octane plasma, make TiO2(or ZrO2Or Ta2O5Or HfO2) quickly reunite growth and magnetron sputtering SiO2Form scattering layer 30.
Referring to Fig. 3, Fig. 3 and show a kind of preparation facilities for preparing scattering layer 30, the vacuum chamber of this preparation facilities is surrounded by furnace wall, bleeding point, target, door, and vacuum chamber height is 0.5-1.5 rice, a diameter of 800mm～1000mm.Vacuum chamber side is provided with fire door 8, to facilitate the handling of workpiece.Vacuum chamber is provided with vacuum orifice 1, and evacuation unit carries out evacuation by vacuum orifice 1 to vacuum chamber, and evacuation unit is made up of molecular pump, mechanical pump, and end vacuum can reach 5 × 10-4Pa.Magnetic controlled sputtering target 5 and filtering cathode arc target 6 are arranged on sidewall of the furnace body, and have certain angle of inclination, and magnetic controlled sputtering target 5 is powered by 5kW～30kW magnetic control power supply, and filtering cathode arc target 6 is powered by inverter, and its current range is 40A～110A.Magnetic control target is high-purity Si, and cathode arc target is Ti(or Zr or Ta or Hf).Multiple heater 3 is installed, in that context it may be convenient to the temperature in regulation vacuum chamber in body of heater.Sample is contained on work rest 4.The slanted arrangement of target ensure that the realization of film layer special construction, substantially increases the plasma density of matrix region, the realization of favourable high-quality film layer simultaneously.
The preparation method of above-mentioned anti-dazzle tabula rasa 100 is simple to operate.
The anti-dazzle tabula rasa provided the present invention below in conjunction with specific embodiment is described in detail.
Preparation used in the embodiment of the present invention and comparative example with test instrunment is:
Apparatus for preparation is the preparation facilities shown in Fig. 3.
Test instrunment and parameter be: uses NDH5000 light transmittance/mist degree analyzer test light transmittance, mist degree, with STA 449C structural synthesis thermal analyzer, sample is carried out thermogravimetric-means of differential scanning calorimetry (TG DSC) and analyze (air ambient, heating rate is 10 DEG C/min), determine the oxidation resistance temperature of coating, use common ball disk-type friction friabilator testing coating coefficient of friction.
Embodiment 1
150 DEG C, under ar gas environment, to substrate through plasma clean.The material of substrate is common optical glass, and thickness is 4 millimeters.After cleaning terminates, 150 DEG C, 0.05Pa(argon and oxygen flow ratio is for 1:9), the bias of substrate for negative 500V under conditions of utilize magnetron sputtering Si target to prepare the SiO of 50 nanometer thickness at substrate surface2Articulamentum.Then 150 DEG C, 0.05Pa(argon and oxygen flow ratio is for 1:9), substrate bias for negative 100V under conditions of, open filtering cathode arc target and magnetic controlled sputtering target, magnetic controlled sputtering target is powered by 5kW magnetic control power supply, the electric current of filtering cathode electric arc target is 40A, the Si of magnetic controlled sputtering target, and oxygen reaction generation SiO2, Ti metal ion is evaporated from filtering cathode arc target, and oxygen reaction generates TiO2, thus at SiO2Matrix disperses TiO2Form scattering layer, TiO2Particle size be 20 nanometers, scattering layer thickness is 400 nanometers, TiO in scattering layer2Weight/mass percentage composition be 2.65%.Preparation terminates rear natural cooling, obtains anti-dazzle tabula rasa.
Test result is: mist degree 30%, light transmittance 89%, coefficient of friction 0.4, oxidation resistance temperature 800 DEG C.
Embodiment 2
450 DEG C, under ar gas environment, to substrate through plasma clean.The material of substrate is common optical glass, and thickness is 4 millimeters.After cleaning terminates, 450 DEG C, 3Pa(argon and oxygen flow ratio is for 9:1), the bias of substrate for negative 1000V under conditions of utilize magnetron sputtering Si target to prepare the SiO of 200 nanometer thickness at substrate surface2Articulamentum.Then 450 DEG C, 3Pa(argon and oxygen flow ratio is for 9:1), substrate bias for negative 200V under conditions of, open filtering cathode arc target and magnetic controlled sputtering target, magnetic controlled sputtering target is powered by 30kW magnetic control power supply, the electric current of filtering cathode electric arc target is 110A, the Si of magnetic controlled sputtering target, and oxygen reaction generation SiO2, Ti metal ion is evaporated from filtering cathode arc target, and oxygen reaction generates TiO2, thus at SiO2Matrix disperses TiO2Form scattering layer, TiO2Particle size be 50 nanometers, scattering layer thickness is 1000 nanometers, TiO in scattering layer2Weight/mass percentage composition be 13.25%.Preparation terminates rear natural cooling, obtains anti-dazzle tabula rasa.
Test result is: mist degree 60%, light transmittance 85%, coefficient of friction 0.4, oxidation resistance temperature 800 DEG C.
Embodiment 3
150 DEG C, under ar gas environment, to substrate through plasma clean.The material of substrate is k9 glass, and thickness is 3.5 millimeters.After cleaning terminates, 150 DEG C, 0.05Pa(argon and oxygen flow ratio is for 6:1), the bias of substrate for negative 500V under conditions of utilize magnetron sputtering Si target to prepare the SiO of 100 nanometer thickness at substrate surface2Articulamentum.Then 150 DEG C, 0.05Pa(argon and oxygen flow ratio is for 6:1), substrate bias for negative 100V under conditions of, open filtering cathode arc target and magnetic controlled sputtering target, magnetic controlled sputtering target is powered by 20kW magnetic control power supply, the electric current of filtering cathode electric arc target is 100A, the Si of magnetic controlled sputtering target, and oxygen reaction generation SiO2, Zr metal ion is evaporated from target, and oxygen reaction generates ZrO2, thus at SiO2Matrix disperses ZrO2Form scattering layer, ZrO2Particle size be 20 nanometers, scattering layer thickness is 400 nanometers, ZrO in scattering layer2Weight/mass percentage composition be 2.39%.Preparation terminates rear natural cooling, obtains anti-dazzle tabula rasa.
Test result is: mist degree 20%, light transmittance 80%, coefficient of friction 0.5, oxidation resistance temperature 750 DEG C.
Embodiment 4
300 DEG C, under ar gas environment, to substrate through plasma clean.The material of substrate is k9 glass, and thickness is 3.5 millimeters.After cleaning terminates, 300 DEG C, 1.5Pa(argon and oxygen flow ratio is for 1:7), the bias of substrate for negative 1000V under conditions of utilize magnetron sputtering Si target to prepare the SiO of 200 nanometer thickness at substrate surface2Articulamentum.Then 300 DEG C, 1.5Pa(argon and oxygen flow ratio is for 1:7), substrate bias for negative 100V under conditions of, open filtering cathode arc target and magnetic controlled sputtering target, magnetic controlled sputtering target is powered by 25kW magnetic control power supply, the electric current of filtering cathode electric arc target is 90A, the Si of magnetic controlled sputtering target, and oxygen reaction generation SiO2, Zr metal ion is evaporated from target, and oxygen reaction generates ZrO2, thus at SiO2Matrix disperses ZrO2Form scattering layer, ZrO2Particle size be 80 nanometers, scattering layer thickness is 800 nanometers, ZrO in scattering layer2Weight/mass percentage composition be 11.95%.Preparation terminates rear natural cooling, obtains anti-dazzle tabula rasa.
Test result is: mist degree 50%, light transmittance 80%, coefficient of friction 0.5, oxidation resistance temperature 750 DEG C.
Embodiment 5
200 DEG C, under ar gas environment, to substrate through plasma clean.The material of substrate is quartz glass, and thickness is 3 millimeters.After cleaning terminates, 200 DEG C, 0.05Pa(argon and oxygen flow ratio is for 8:1), the bias of substrate for negative 800V under conditions of utilize magnetron sputtering Si target to prepare the SiO of 100 nanometer thickness at substrate surface2Articulamentum.Then 200 DEG C, 0.05Pa(argon and oxygen flow ratio is for 8:1), substrate bias for negative 100V under conditions of, open filtering cathode arc target and magnetic controlled sputtering target, magnetic controlled sputtering target is powered by 15kW magnetic control power supply, the electric current of filtering cathode electric arc target is 50A, the Si of magnetic controlled sputtering target, and oxygen reaction generation SiO2, Ta metal ion is evaporated from target, and oxygen reaction generates Ta2O5, thus at SiO2Matrix disperses Ta2O5Form scattering layer, Ta2O5Particle size be 30 nanometers, scattering layer thickness is 400 nanometers, Ta in scattering layer2O5Weight/mass percentage composition be 13.1%.Preparation terminates rear natural cooling, obtains anti-dazzle tabula rasa.
Test result is: mist degree 30%, light transmittance 85%, coefficient of friction 0.5, oxidation resistance temperature 750 DEG C.
Embodiment 6
400 DEG C, under ar gas environment, to substrate through plasma clean.The material of substrate is quartz glass, and thickness is 3 millimeters.After cleaning terminates, 400 DEG C, 2Pa(argon and oxygen flow ratio is for 1:8), the bias of substrate for negative 500V under conditions of utilize magnetron sputtering Si target to prepare the SiO of 200 nanometer thickness at substrate surface2Articulamentum.Then 400 DEG C, 2Pa(argon and oxygen flow ratio is for 1:8), substrate bias for negative 200V under conditions of, open filtering cathode arc target and magnetic controlled sputtering target, magnetic controlled sputtering target is powered by 20kW magnetic control power supply, the electric current of filtering cathode electric arc target is 80A, the Si of magnetic controlled sputtering target, and oxygen reaction generation SiO2, Ta metal ion is evaporated from target, and oxygen reaction generates Ta2O5, thus at SiO2Matrix disperses Ta2O5Form scattering layer, Ta2O5Particle size be 80 nanometers, scattering layer thickness is 800 nanometers, Ta in scattering layer2O5Weight/mass percentage composition be 65.3%.Preparation terminates rear natural cooling, obtains anti-dazzle tabula rasa.
Test result is: mist degree 50%, light transmittance 85%, coefficient of friction 0.55, oxidation resistance temperature 750 DEG C.
Embodiment 7
150 DEG C, under ar gas environment, to substrate through plasma clean.The material of substrate is quartz glass, and thickness is 3 millimeters.After cleaning terminates, 200 DEG C, 0.05Pa(argon and oxygen flow ratio is for 1:6), the bias of substrate for negative 500V under conditions of utilize magnetron sputtering Si target to prepare the SiO of 100 nanometer thickness at substrate surface2Articulamentum.Then 200 DEG C, 0.05Pa(argon and oxygen flow ratio is for 1:6), substrate bias for negative 100V under conditions of, open filtering cathode arc target and magnetic controlled sputtering target, the Si of magnetic controlled sputtering target, magnetic controlled sputtering target is powered by 25kW magnetic control power supply, the electric current of filtering cathode electric arc target is 85A, and oxygen reaction generates SiO2, Hf metal ion is evaporated from target, and oxygen reaction generates HfO2, thus at SiO2Matrix disperses HfO2Form scattering layer, HfO2Particle size be 20 nanometers, scattering layer thickness is 400 nanometers, HfO in scattering layer2Weight/mass percentage composition be 6.7%.Preparation terminates rear natural cooling, obtains anti-dazzle tabula rasa.
Test result is: mist degree 15%, light transmittance 90%, coefficient of friction 0.65, oxidation resistance temperature 750 DEG C.
Embodiment 8
300 DEG C, under ar gas environment, to substrate through plasma clean.The material of substrate is quartz glass, and thickness is 3 millimeters.After cleaning terminates, 300 DEG C, 2.5Pa(argon and oxygen flow ratio is for 6:1), the bias of substrate for negative 900V under conditions of utilize magnetron sputtering Si target to prepare the SiO of 100 nanometer thickness at substrate surface2Articulamentum.Then 300 DEG C, 2.5Pa(argon and oxygen flow ratio is for 6:1), substrate bias for negative 150V under conditions of, open filtering cathode arc target and magnetic controlled sputtering target, magnetic controlled sputtering target is powered by 28kW magnetic control power supply, the electric current of filtering cathode electric arc target is 75A, the Si of magnetic controlled sputtering target, and oxygen reaction generation SiO2, Hf metal ion is evaporated from target, and oxygen reaction generates HfO2, thus at SiO2Matrix disperses HfO2Form scattering layer, HfO2Particle size be 100 nanometers, scattering layer thickness is 700 nanometers, HfO in scattering layer2Weight/mass percentage composition be 33.3%.Preparation terminates rear natural cooling, obtains anti-dazzle tabula rasa.
Test result is: mist degree 40%, light transmittance 85%, coefficient of friction 0.65, oxidation resistance temperature 750 DEG C.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes more concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that, for the person of ordinary skill of the art, without departing from the inventive concept of the premise, it is also possible to make some deformation and improvement, these broadly fall into protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (5)
1. the preparation method of an anti-dazzle tabula rasa, it is characterised in that comprise the following steps:
Preparing articulamentum at substrate surface magnetron sputtering, the material of described articulamentum is silicon dioxide；And prepare scattering layer on the surface of described articulamentum, scattering layer includes silica substrate and is dispersed in the scattering particles in described silica substrate, the material of described scattering particles is titanium dioxide, zirconium dioxide, tantalum pentoxide or hafnium oxide, described silica substrate is prepared by magnetron sputtering, and described scattering particles is prepared by filtering cathode radian technology.
The preparation method of anti-dazzle tabula rasa the most as claimed in claim 1, it is characterised in that further comprised the steps of: before substrate surface magnetron sputtering prepares articulamentum first 150 DEG C～450 DEG C, substrate is carried out plasma clean under argon gas atmosphere.
The preparation method of anti-dazzle tabula rasa the most as claimed in claim 1, it is characterised in that the particle diameter of described scattering particles is 20nm～100nm.
The preparation method of anti-dazzle tabula rasa the most as claimed in claim 1, it is characterised in that when magnetron sputtering prepares described articulamentum, temperature is 150 DEG C～450 DEG C, vacuum is 0.05Pa～3Pa, and substrate bias is negative 500V～negative 1000V, is passed through the mixed gas that gas is oxygen and argon.
The preparation method of anti-dazzle tabula rasa the most as claimed in claim 1, it is characterized in that, when preparing scattering layer, surface is formed the substrate of articulamentum be placed in the vacuum chamber being provided with magnetic controlled sputtering target and filtering cathode electric arc target and carry out, the material of described magnetic controlled sputtering target is silicon, the material of described filtering cathode electric arc target is Ti, Zr, Ta or Hf, temperature is 150 DEG C～450 DEG C, substrate bias is negative 100V～negative 200V, vacuum is 0.05Pa～3Pa, magnetic controlled sputtering target is powered by 5kW～30kW magnetic control power supply, and the electric current of filtering cathode electric arc target is 40A～110A.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN2634284Y (en) * | 2003-03-11 | 2004-08-18 | 上海绿荫高科技发展有限公司 | Nano ultraviolet clearing light transmission screen |
| CN101856892A (en) * | 2009-04-07 | 2010-10-13 | 康准电子科技（昆山）有限公司 | Adhered film |
| CN202305865U (en) * | 2011-09-30 | 2012-07-04 | 北京金吉奥梦科技有限公司 | Low-reflection polarizer |
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| JP2011107189A (en) * | 2009-11-12 | 2011-06-02 | Tokai Rika Co Ltd | Reflection mirror |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2634284Y (en) * | 2003-03-11 | 2004-08-18 | 上海绿荫高科技发展有限公司 | Nano ultraviolet clearing light transmission screen |
| CN101856892A (en) * | 2009-04-07 | 2010-10-13 | 康准电子科技（昆山）有限公司 | Adhered film |
| CN202305865U (en) * | 2011-09-30 | 2012-07-04 | 北京金吉奥梦科技有限公司 | Low-reflection polarizer |
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