CN104167741A - Horizontal directly-linked thyristor valve block - Google Patents
Horizontal directly-linked thyristor valve block Download PDFInfo
- Publication number
- CN104167741A CN104167741A CN201410405239.7A CN201410405239A CN104167741A CN 104167741 A CN104167741 A CN 104167741A CN 201410405239 A CN201410405239 A CN 201410405239A CN 104167741 A CN104167741 A CN 104167741A
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- China
- Prior art keywords
- valve group
- thyristor valve
- crossbeam
- valve block
- thyristor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/30—Reactive power compensation
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- Devices Affording Protection Of Roads Or Walls For Sound Insulation (AREA)
Abstract
The invention relates to a horizontal directly-linked thyristor valve block. The horizontal directly-linked thyristor valve block is formed by overlapping three layers of single-layer valve blocks. Each single-layer valve block comprises a shielding case, supporting structural parts, cross beams and silicon stacks, wherein the shielding case, the supporting structural parts and the cross beams form a frame; the silicon stacks are transversely, horizontally and fixedly placed on the cross beams; interlaminar water pipes, water resistors and capacitors are further mounted on the cross beams. The single-layer valve blocks are fixedly connected together through interlaminar insulators. The lowermost single-layer valve block is fixed to the ground through the bottom insulators and bases. The horizontal directly-linked thyristor valve block is convenient to install, simple in structure, light in weight, good in stability and small in occupied area.
Description
Technical field
The present invention relates to a kind of horizontal direct screening thyristor valve group.
Background technology
The highest voltage level of applying in direct screening SVC technology is at present 66kV, comparatively generally 35kV and 10kV, and structure is vertical structure.Although improve to a great extent the quality of electrical network, still unsatisfactory aspect construction cost and line loss, and vertical structure has significant limitation, and height can not exceed a threshold value, otherwise structural stability cannot ensure.
More than narration mean traditional SVC Technology Need proceed upgrading improve.Direct screening 110kV TCR thyristor valve group is as the highest direct screening SVC key technology of current electric pressure, and its application can increase substantially the precision of electric power system reactive power compensation, and effectively promotes the improvement speed of mains by harmonics.Meanwhile, the direct screening SVC of voltage levels also can reduce a large amount of floor spaces and construction cost, and due to the raising of direct screening electric pressure, the in the situation that of equal compensation capacity, the phase current of SVC valve group significantly reduces, and has reduced a large amount of losses.
Summary of the invention
The object of the invention is to overcome the defect that prior art exists, provide a kind of easy for installation, simple in structure, lightweight, good stability, the horizontal direct screening thyristor valve group that floor space is few.
The technical solution adopted for the present invention to solve the technical problems is: a kind of horizontal direct screening thyristor valve group, this thyristor valve group is formed by 3 layers of single-beat valve group closed assembly, described single-beat valve group comprises radome, supporting structure, crossbeam and silicon stack, described radome, supporting structure and crossbeam composition framework, described silicon stack accumbency fixed placement, on crossbeam, is also provided with interlayer water pipe, water resistance and electric capacity on described crossbeam; Between described single-beat valve group, be fixed together by layer insulation, described undermost single-beat valve group fixes on the ground by bottom insulation and base.
According to another embodiment of the invention, further comprise between described interlayer water pipe and being communicated with by water main, described undermost interlayer water pipe bottom is connected to bottom bend pipe.
According to another embodiment of the invention, further comprise that described this thyristor valve group also comprises service kit.
According to another embodiment of the invention, the number that further comprises layer insulation between described single-beat valve group is 6.
According to another embodiment of the invention, the material that further comprises described radome, supporting structure and crossbeam is aluminium alloy extrusions.
Beneficial effect of the present invention: the invention solves the defect existing in background technology, the present invention is that horizontal direct screening 110kV TCR thyristor valve group has designed a kind of horizontal type structure, valve group overall structure is become to cross direction profiles from longitudinal distribution, effectively increase the quantity that stacks of thyristor in valve group, and ensure the stability of structure, utilize the characteristic of radome simultaneously, all band electrical components are all wrapped in radome, make the Electric Field Distribution of structure even.
Brief description of the drawings
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Fig. 1 is the structural representation that the present invention overlooks;
Fig. 2 is the main structural representation of looking of the present invention;
Fig. 3 is silicon stack maintenance structure schematic diagram of the present invention;
Embodiment
As Figure 1-3, a kind of horizontal direct screening thyristor valve group, this thyristor valve group is formed by 3 layers of single-beat valve group closed assembly, described single-beat valve group 9 comprises radome 1, supporting structure 2, crossbeam 3 and silicon stack 5, described radome 1, supporting structure 2 and crossbeam 3 form framework, described silicon stack 5 accumbency fixed placement are on crossbeam 3, interlayer water pipe 6, water resistance 7 and electric capacity 8 are also installed on described crossbeam 3, between interlayer water pipe 6, be communicated with by water main 10, described undermost interlayer water pipe 6 bottoms are connected to bottom bend pipe 14; Between described single-beat valve group 9, be fixed together by layer insulation 11, the number of layer insulation 11 between single-beat valve group 9 is 6, and described undermost single-beat valve group 9 fixes on the ground by bottom insulation son 12 and base 13.
The present invention is formed by 3 layers of single-beat valve group closed assembly, and every layer of single-beat valve group is relatively independent.Individual layer valve block structure as shown in Figure 1, is assembled together radome 1, supporting structure 2 and crossbeam 3, the main frame part of composition valve group.Then by silicon stack 5 good crimping, adopt horizontal type structure to be arranged on crossbeam 3, interlayer water pipe 6, water resistance 7, electric capacity 8 are also arranged on crossbeam 3 simultaneously, have formed the main components part of single-beat valve, wherein radome 1, supporting structure 2 and crossbeam 3 adopt aluminium alloy extrusions.
Overall structure as shown in Figure 2, by single-beat valve group 9, layer insulation 11, bottom insulation 12, base 13 according to schematic structure closed assembly, base 13 is fixed on to ground simultaneously, and water main 10, bottom bend pipe 14 are connected with the interlayer water pipe of every layer of single-beat valve group by flange respectively, connect copper bar, integral installation completes.
In maintenance process, do not need to dismantle valve group, use special service kit 15, as Fig. 3, be fixed on the end plate of silicon stack 5, the pressure release of can pressurizeing operation, replaces the thyristor damaging.
In structural design, radome utilizes the thread slider of self in this invention, and with the structural framing of supporting structure 2, crossbeam 3, the common composition single-beat valve of supporting insulator 4 group, all components and parts all rely on this structural framing location and installation.
This version of the present invention mainly contains following advantage:
1. valve group forms modular construction, and it is sequentially clear to build, and installs simple and convenient;
2. simple in structure, less use structure member;
3. structural member major part used is aluminium alloy extrusions, easy to process, lightweight;
4. structure has higher rigidity, and resistance to overturning is good;
5. land occupation resource is few, has reduced construction cost.
Should be appreciated that specific embodiment described above, only for explaining the present invention, is not intended to limit the present invention.The apparent variation of being extended out by spirit of the present invention or variation are still among protection scope of the present invention.
Claims (5)
1. a horizontal direct screening thyristor valve group, it is characterized in that: this thyristor valve group is formed by 3 layers of single-beat valve group closed assembly, described single-beat valve group comprises radome, supporting structure, crossbeam and silicon stack, described radome, supporting structure and crossbeam composition framework, described silicon stack accumbency fixed placement, on crossbeam, is also provided with interlayer water pipe, water resistance and electric capacity on described crossbeam; Between described single-beat valve group, be fixed together by layer insulation, described undermost single-beat valve group fixes on the ground by bottom insulation and base.
2. horizontal direct screening thyristor valve group according to claim 1, is characterized in that: between described interlayer water pipe, be communicated with by water main, described undermost interlayer water pipe bottom is connected to bottom bend pipe.
3. horizontal direct screening thyristor valve group according to claim 1, is characterized in that: described this thyristor valve group also comprises service kit.
4. horizontal direct screening thyristor valve group according to claim 1, is characterized in that: the number of layer insulation between described single-beat valve group is 6.
5. horizontal direct screening thyristor valve group according to claim 1, is characterized in that: the material of described radome, supporting structure and crossbeam is aluminium alloy extrusions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410405239.7A CN104167741A (en) | 2014-08-15 | 2014-08-15 | Horizontal directly-linked thyristor valve block |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410405239.7A CN104167741A (en) | 2014-08-15 | 2014-08-15 | Horizontal directly-linked thyristor valve block |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104167741A true CN104167741A (en) | 2014-11-26 |
Family
ID=51911450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410405239.7A Pending CN104167741A (en) | 2014-08-15 | 2014-08-15 | Horizontal directly-linked thyristor valve block |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104167741A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104867633A (en) * | 2015-04-27 | 2015-08-26 | 中国南方电网有限责任公司超高压输电公司梧州局 | Transverse insulation supporting structure |
| CN104917499A (en) * | 2015-06-24 | 2015-09-16 | 国家电网公司 | 110kV-level thyristor valve body |
| CN110875598A (en) * | 2018-08-29 | 2020-03-10 | 南京南瑞继保电气有限公司 | Horizontal thyristor valve group |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2852487Y (en) * | 2005-09-13 | 2006-12-27 | 中国电力科学研究院 | Thyratron valve set mechanical structure of horizontal static reactive-load compensator |
| CN101719719A (en) * | 2009-12-14 | 2010-06-02 | 中国电力科学研究院 | Novel thyristor converter valve module |
| CN201937444U (en) * | 2010-12-16 | 2011-08-17 | 许继集团有限公司 | Valve module of thyristor converter valve |
| CN102290402A (en) * | 2011-09-20 | 2011-12-21 | 株洲变流技术国家工程研究中心有限公司 | Horizontal light-controlled water-cooled thyristor valve block |
| CN202696099U (en) * | 2012-05-21 | 2013-01-23 | 浙江嘉善科能电力设备有限公司 | Horizontal type direct current melting ice thyristor valve group |
| CN204131134U (en) * | 2014-08-15 | 2015-01-28 | 常州博瑞电力自动化设备有限公司 | Horizontal direct screening thyristor controlled series compensation |
-
2014
- 2014-08-15 CN CN201410405239.7A patent/CN104167741A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2852487Y (en) * | 2005-09-13 | 2006-12-27 | 中国电力科学研究院 | Thyratron valve set mechanical structure of horizontal static reactive-load compensator |
| CN101719719A (en) * | 2009-12-14 | 2010-06-02 | 中国电力科学研究院 | Novel thyristor converter valve module |
| CN201937444U (en) * | 2010-12-16 | 2011-08-17 | 许继集团有限公司 | Valve module of thyristor converter valve |
| CN102290402A (en) * | 2011-09-20 | 2011-12-21 | 株洲变流技术国家工程研究中心有限公司 | Horizontal light-controlled water-cooled thyristor valve block |
| CN202696099U (en) * | 2012-05-21 | 2013-01-23 | 浙江嘉善科能电力设备有限公司 | Horizontal type direct current melting ice thyristor valve group |
| CN204131134U (en) * | 2014-08-15 | 2015-01-28 | 常州博瑞电力自动化设备有限公司 | Horizontal direct screening thyristor controlled series compensation |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104867633A (en) * | 2015-04-27 | 2015-08-26 | 中国南方电网有限责任公司超高压输电公司梧州局 | Transverse insulation supporting structure |
| CN104917499A (en) * | 2015-06-24 | 2015-09-16 | 国家电网公司 | 110kV-level thyristor valve body |
| CN110875598A (en) * | 2018-08-29 | 2020-03-10 | 南京南瑞继保电气有限公司 | Horizontal thyristor valve group |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20141126 |
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| RJ01 | Rejection of invention patent application after publication |