CN104158425A - Parallel interleaving single-stage boost inverter - Google Patents

Parallel interleaving single-stage boost inverter Download PDF

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Publication number
CN104158425A
CN104158425A CN201410342705.1A CN201410342705A CN104158425A CN 104158425 A CN104158425 A CN 104158425A CN 201410342705 A CN201410342705 A CN 201410342705A CN 104158425 A CN104158425 A CN 104158425A
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China
Prior art keywords
inductance
stage boost
diode
inverter
controllable impedance
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CN201410342705.1A
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Chinese (zh)
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周玉斐
洪峰
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Nanjing University of Aeronautics and Astronautics
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Nanjing University of Aeronautics and Astronautics
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Priority to CN201410342705.1A priority Critical patent/CN104158425A/en
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Abstract

The invention discloses a parallel interleaving single-stage boost inverter. The parallel interleaving single-stage boost inverter comprises an input DC power supply, a single-stage boost network and an inverter bridge, wherein the single-stage boost network comprises a first adjustable inductor, a second adjustable inductor, a fixed inductor, a first capacitor, a second capacitor, a third capacitor, a first diode and a second diode. Under the condition of the same step-up ratio, the effective value of the input current is doubled, the ripple wave is halved, and the parallel interleaving single-stage boost inverter is suitable for occasions requiring low-voltage and high-current input.

Description

Crisscross parallel single-stage boost inverter
Technical field
The present invention relates to power electronic equipment field, be specifically related to a kind of crisscross parallel single-stage boost inverter.
Background technology
Under the background of Present Global energy supply growing tension, the control of regenerative resource distributed power generation and conversion, AC starter control, electric automobile driving, Novel starting generation technology etc., all be unable to do without electronic power inversion technology.Therefore, exploitation is efficient, the inversion transformation technique that boosts of high reliability and high power density, has very large realistic meaning.
The single-stage boost inverter building with passive device is between input power and inverter bridge, to insert the passive network that comprises electric capacity and inductance, the Z-source inverter of formation.They use conventional voltage source inventer institute unallowed " straight-through zero vector " state, and regulate the turn ratio of coupling inductance or tap inductor, realize stepping functions.Their advantage embodies a concentrated reflection of:
(1) by controlling the bridge arm direct pass time, realize single-stage buck mapping function, AC voltage can be below or above input direct-current side voltage, and the degree while providing voltage to fall is got over ability;
(2) due to the straight-through a kind of normal mode of operation that becomes inverter of inverter bridge leg, there will not be misleading or mistake shutoff and damage inverter bridge of switching tube, improve the reliability of complete machine;
(3) owing to not needing the time of dead area compensation (voltage-source type), fundamentally avoided the distortion of output voltage waveforms.
Common single-stage boost inverter is at present all to form based on passive network:
Huang Wenxin, Hu Yuwen, Yang Qi, " monopole inverter capable of boosting voltage " (patent of invention: ZL200910181639.3), as shown in Figure 1;
Zhou Yufei, Huang Wenxin, " a kind of single-stage boost inverter " (patent of invention: ZL201110046688.3), as shown in Figure 2;
Zhou Yufei, Huang Wenxin, Hu Yuwen, " with the single-stage boost inverter of tap inductor " (patent of invention: 201110203219.8), as shown in Figure 3;
Zhou Yufei, Huang Wenxin, " single-stage boost inverter " (patent of invention: 201310283970.2), as shown in Figure 4;
Li Chunjie, Huang Wenxin, " a kind of single-stage boost inverter " (patent of invention: 201310358565.2), as shown in Figure 5.
In the time being applied to the occasion of low-voltage, high-current input, above single-stage boost inverter, by facing the problem that in passive network, stresses of parts is high, loss increases, haves much room for improvement.
Summary of the invention
Technical problem to be solved by this invention is for the defect and the deficiency that single-stage boost inverter are applied to low-voltage, high-current input occasion mentioned in background technology, and a kind of single-stage boost inverter of crisscross parallel is provided.
The present invention is for solving the problems of the technologies described above by the following technical solutions:
Crisscross parallel single-stage boost inverter, comprise the input DC power, single-stage boost network, the inverter bridge that connect successively, it is characterized in that, described single-stage boost network comprises the first to second controllable impedance, fixed inductance, the first to the 3rd electric capacity and the first to second diode, wherein:
One end of one end respectively with the first controllable impedance of described the first electric capacity, one end of the second controllable impedance, the anode of inverter bridge are connected, and the other end is connected with one end of fixed inductance, the anode of the first diode, the anode of the second diode respectively;
The other end of described the first controllable impedance is connected with the negative electrode of the first diode;
The other end of described the second controllable impedance is connected with the negative electrode of the second diode;
The other end of described fixed inductance is connected with the positive pole of input DC power;
One end of one end of described the second electric capacity the respectively with three electric capacity, the negative pole of input DC power, the negative terminal of inverter bridge are connected;
The other end of described the second electric capacity is connected with the tap of the first controllable impedance;
The other end of described the 3rd electric capacity is connected with the tap of the second controllable impedance.
As the further prioritization scheme of crisscross parallel single-stage boost inverter of the present invention, described the first controllable impedance is the first autotransformer that the first inductance and the second inductance form, and wherein, the first inductance is as former limit winding, and the second inductance is as secondary winding;
Described the second controllable impedance is that the 3rd inductance and the 4th inductance connect and compose the second autotransformer, and wherein, the 3rd inductance is as former limit winding, and the 4th inductance is as secondary winding;
Former secondary winding in described the first autotransformer and the second autotransformer is forward series connection.
As the further prioritization scheme of crisscross parallel single-stage boost inverter of the present invention, in the time that the step-up ratio requiring is lower, described the first controllable impedance and the second controllable impedance all adopt fixed inductance to substitute, the other end of described the second electric capacity is connected with the negative electrode of described the first diode, and the other end of described the 3rd electric capacity is connected with the negative electrode of described the second diode.
The present invention adopts above technical scheme compared with prior art, has following technique effect:
The form that adopts crisscross parallel, makes single-stage boost network under identical step-up ratio, and the increasing of input current effective value is twice, and ripple reduces half, is applicable to the occasion of input requirements low-voltage, high-current.
Brief description of the drawings
Fig. 1 is the circuit diagram of " monopole inverter capable of boosting voltage " (patent of invention: ZL200910181639.3);
Fig. 2 is the circuit diagram of " a kind of single-stage boost inverter " (patent of invention: ZL201110046688.3);
Fig. 3 is " with the single-stage boost inverter of tap inductor " (patent of invention: circuit diagram 201110203219.8);
Fig. 4 is " single-stage boost inverter " (patent of invention: circuit diagram 201310283970.2);
Fig. 5 is " a kind of single-stage boost inverter " (patent of invention: circuit diagram 201310358565.2);
Fig. 6 is the circuit connection diagram of first embodiment of the invention;
Fig. 7 is the circuit connection diagram of second embodiment of the invention.
In figure, 1-input DC power, 2-single-stage boost network, 3-inverter bridge.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail:
First with reference to shown in figure 6, the invention provides a kind of single-stage boost inverter of crisscross parallel, mainly comprise three parts: input DC power, single-stage boost network, inverter bridge, these three parts connect successively, and for single-stage boost network wherein, the electric capacity, diode and the inductance that comprise autotransformer and be connected with these two autotransformers respectively; It should be noted that, the electric capacity and the inductance that in single-stage boost network herein, comprise only refer to its component type, but not only comprise an electric capacity and an inductance, that is, this single-stage boost network is likely connected with multiple electric capacity and inductance, but its type is only electric capacity and inductance.
Shown in figure 6, it is the circuit connection diagram of the first embodiment provided by the present invention, its three parts that comprise are shown in respectively the dotted line frame in figure, inductance L 1 and the inductance L 2 of single-stage boost network wherein form autotransformer Tr1, inductance L 1 is as former limit winding, inductance L 2 is as secondary winding, inductance L 3 and inductance L 4 form autotransformer Tr2, inductance L 3 is as former limit winding, inductance L 4 is as secondary winding, former secondary winding is forward series connection, the mid point of autotransformer Tr1 is connected with one end of capacitor C 2, the other end of inductance L 2 connects the negative electrode of diode D1, one end of the anodic bonding inductance L 5 of diode D1 and one end of capacitor C 1, the other end of capacitor C 1 connects the other end of inductance L 1 and the anode of inverter bridge, the other end of inductance L 5 connects the positive pole of input power, the negative pole of power supply connects the other end of capacitor C 2, one end of capacitor C 3 is connected with the negative terminal of inverter bridge, the mid point of autotransformer Tr2 is connected with the other end of capacitor C 3, the other end of inductance L 3 connects one end of inductance L 1, one end of capacitor C 1 and the anode of bus, the other end of inductance L 4 connects the negative electrode of diode D2, the anode of the anodic bonding diode D1 of diode D2, one end of one end of capacitor C 1 and inductance L 5.
The present embodiment provides a kind of crisscross parallel type single-stage boost inverter, and inverter bridge (3) can be that three-phase also can be for single-phase, corresponding three-phase applications and single-phase application respectively; By adjusting the working method of the unallowed bridge arm direct pass of conventional voltage source inventer and dependence autotransformer (Tr1, Tr2), autotransformer (Tr1, Tr2) stored energy in the time that inverter bridge is straight-through, this energy is merged to the energy that input power provides non-when straight-through, powering load, busbar voltage is got a promotion, by centre cap position and the straight-through big or small capable of regulating step-up ratio of control of design autotransformer (Tr1, Tr2).The effect of diode (D1, D2) is to prevent that the energy that autotransformer (Tr1, Tr2) stores when straight-through from discharging in advance.The former limit winding of autotransformer in circuit (Tr1, Tr2) and the turn ratio of secondary winding are designed to N1≤N2, autotransformer (Tr1, Tr2) storage power in the time of bridge arm direct pass, non-when straight-through, the energy storage of autotransformer (Tr1, Tr2) adds the energy powering load of mains side input, promotes busbar voltage.
When stable state, in the straight-through cycle, the average voltage at the winding two ends, former limit of autotransformer Tr1 is zero,
U C 1 D 0 = U C 2 1 + N ( 1 - D 0 ) - - - ( 1 )
Wherein, straight-through duty ratio is D 0, the turn ratio of the former secondary of autotransformer is N=N 2/ N 1.
Average voltage on a straight-through cycle internal inductance L5 is zero,
( U C 1 + U i ) D 0 = ( U C 1 - NU C 2 1 + N - U i ) ( 1 - D 0 ) - - - ( 2 )
Obtaining capacitance voltage is: U C 1 = 1 - D 0 1 - ( 2 + N ) D 0 U in , U C 2 = ( 1 + N ) D 0 1 - ( 2 + N ) D 0 U in .
The expression formula that further obtains busbar voltage amplitude is:
U b = U C 1 + U C 2 - NU C 2 1 + N = 1 1 - ( 2 + N ) D 0 U i - - - ( 3 )
Wherein, B is step-up ratio, B = 1 1 - ( 2 + N ) D 0 .
Need the straight-through zero vector of explanation to inject in traditional zero vector, and straight-through zero vector and traditional zero vector are equivalent to the action effect of load, all to make load short circuits, natural afterflow, so inject straight-through zero vector on inverter ac output voltage without any impact.D 0there is mutual restriction relation: N ≠ (1-2D with N 0)/D 0.
Shown in figure 7, it is the circuit connection diagram of the second embodiment provided by the present invention, its three parts that comprise are shown in respectively the dotted line frame in figure, wherein one end of inductance L 6 connects one end of capacitor C 5 and the negative electrode of diode D3, the other end of inductance L 6 connects the anode of inverter bridge, one end of one end of capacitor C 4 and inductance L 7, the other end of capacitor C 4 connects the anode of diode D3, the anode of one end of inductance L 8 and diode D4, the negative electrode of diode D4 connects one end of capacitor C 6 and the other end of inductance L 7, the other end of capacitor C 6 connects the other end of capacitor C 5, the negative pole of power supply and the negative terminal of inverter bridge.
Its steady operation principle is similar to the first and implements structure, repeats no more, and different is that a discrete inductance of autotransformer substitutes.
Implement the form of structure employing crisscross parallel for these two kinds, make single-stage boost network under identical step-up ratio, the increasing of input current effective value is twice, and ripple reduces half, is applicable to the occasion of input requirements low-voltage, high-current.
Above inductance element is all to arrange separately, and in actual production is manufactured, in order to pursue the miniaturization of circuit and integrated, inductance element and autotransformer (inductance element) can be made as to one, to outward seeming, be only provided with autotransformer (inductance element) and capacity cell, but from essence, the inductance element that is made as one with autotransformer is to work alone, and still has all working characteristic of inductance.
In sum, a kind of crisscross parallel single-stage boost inverter of the present invention, focuses on single-stage boost network to be designed to the form that autotransformer is connected with electric capacity, inductance, and adopts the form of crisscross parallel, is applicable to the occasion of input requirements low-voltage, high-current.

Claims (3)

1. crisscross parallel single-stage boost inverter, comprise the input DC power, single-stage boost network, the inverter bridge that connect successively, it is characterized in that, described single-stage boost network comprises the first to second controllable impedance, fixed inductance, the first to the 3rd electric capacity and the first to second diode, wherein:
One end of one end respectively with the first controllable impedance of described the first electric capacity, one end of the second controllable impedance, the anode of inverter bridge are connected, and the other end is connected with one end of fixed inductance, the anode of the first diode, the anode of the second diode respectively;
The other end of described the first controllable impedance is connected with the negative electrode of the first diode;
The other end of described the second controllable impedance is connected with the negative electrode of the second diode;
The other end of described fixed inductance is connected with the positive pole of input DC power;
One end of one end of described the second electric capacity the respectively with three electric capacity, the negative pole of input DC power, the negative terminal of inverter bridge are connected;
The other end of described the second electric capacity is connected with the tap of the first controllable impedance;
The other end of described the 3rd electric capacity is connected with the tap of the second controllable impedance.
2. crisscross parallel single-stage boost inverter as claimed in claim 1, is characterized in that:
Described the first controllable impedance is the first autotransformer that the first inductance and the second inductance form, and wherein, the first inductance is as former limit winding, and the second inductance is as secondary winding;
Described the second controllable impedance is that the 3rd inductance and the 4th inductance connect and compose the second autotransformer, and wherein, the 3rd inductance is as former limit winding, and the 4th inductance is as secondary winding;
Former secondary winding in described the first autotransformer and the second autotransformer is forward series connection.
3. crisscross parallel single-stage boost inverter as claimed in claim 1, it is characterized in that, described the first controllable impedance and the second controllable impedance all adopt fixed inductance to substitute, the other end of described the second electric capacity is connected with the negative electrode of described the first diode, and the other end of described the 3rd electric capacity is connected with the negative electrode of described the second diode.
CN201410342705.1A 2014-07-17 2014-07-17 Parallel interleaving single-stage boost inverter Pending CN104158425A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107959413A (en) * 2017-11-22 2018-04-24 西安电子科技大学 A kind of low high pressure converted power supply of integrated circuit
CN109688669A (en) * 2019-03-11 2019-04-26 福州大学 A kind of High Power Factor no electrolytic capacitor LED drive power and its control method
CN111600502A (en) * 2020-05-27 2020-08-28 南通大学 CCM single-bridge-arm integrated single-phase boost inverter and control method

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US20120081936A1 (en) * 2010-09-30 2012-04-05 Intersil Americas Inc. System and method for converting an ac input voltage to a regulated dc output voltage using a z-type converter with rectified switches
CN102255542A (en) * 2011-07-20 2011-11-23 南京航空航天大学 Single-stage boosting inverter with tap inductor
CN103368430A (en) * 2013-07-08 2013-10-23 南京航空航天大学 Single-stage boosting inverter

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107959413A (en) * 2017-11-22 2018-04-24 西安电子科技大学 A kind of low high pressure converted power supply of integrated circuit
CN109688669A (en) * 2019-03-11 2019-04-26 福州大学 A kind of High Power Factor no electrolytic capacitor LED drive power and its control method
CN111600502A (en) * 2020-05-27 2020-08-28 南通大学 CCM single-bridge-arm integrated single-phase boost inverter and control method
CN111600502B (en) * 2020-05-27 2021-10-26 南通大学 CCM single-bridge-arm integrated single-phase boost inverter and control method

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Application publication date: 20141119