CN104157561B - Method for reducing contact resistance of graphene electrode by using thickness of two dimensional metal layer - Google Patents
Method for reducing contact resistance of graphene electrode by using thickness of two dimensional metal layer Download PDFInfo
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- CN104157561B CN104157561B CN201410389035.9A CN201410389035A CN104157561B CN 104157561 B CN104157561 B CN 104157561B CN 201410389035 A CN201410389035 A CN 201410389035A CN 104157561 B CN104157561 B CN 104157561B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 title claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 28
- 239000002184 metal Substances 0.000 title claims abstract description 28
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 11
- 229910052737 gold Inorganic materials 0.000 claims abstract description 9
- 239000010931 gold Substances 0.000 claims abstract description 9
- 238000005036 potential barrier Methods 0.000 claims abstract description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 238000004458 analytical method Methods 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Chemical group 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Chemical group 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 150000001336 alkenes Chemical class 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/0425—Making electrodes
- H01L21/043—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Electrodes Of Semiconductors (AREA)
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Abstract
The invention belongs to the technical field of the manufacturing of two-dimensional material based integrated circuits, and particularly relates to a method for reducing the contact resistance of a graphene electrode by using the thickness of a two dimensional metal layer. By a method of physical vapor deposition (PVD), the metal electrode is deposited on a graphene member, and a structure of graphene/two dimensional metal layer/gold is manufactured. The contact of the graphene and the two dimensional metal layer is adjusted by adjusting the thickness of the two dimensional metal layer, a contact potential barrier is adjusted so that the contact potential barrier is the lowest, and through the adoption of the method, the contact resistance of the graphene is reduced. Through the adoption of the method, the contact resistance of the graphene can be effectively reduced, so that the graphene member with excellent property is prepared. In addition, the method is simple and convenient. The method can be used as a basic method for preparing two-dimensional material members.
Description
Technical field
The invention belongs to carbon-based ic manufacturing technology field is and in particular to a kind of reduce Graphene electrodes contact resistance
Method.
This method is novel, convenient and simple, can effectively improve the contact resistance of Graphene electrodes by this method, carry
The performance of high graphene device.
Background technology
With the discovery of Graphene, it has excellent performance, and Graphene has the electron mobility 200 of high speed under room temperature
000 cm2V s, high theoretical specific surface area 2600 m2/ g, also there is high heat conductance 3000 w/m k and outstanding mechanical property
Energy (high-modulus 1060gpa, high intensity 130gpa), can be used as device electrode and following generation semiconductor industry basis material
Material.The cellular two dimensional crystal that Graphene (graphene) is made up of individual layer hexagonal cellular carbon atom, is a layer in graphite,
Fig. 1 show the basic structure schematic diagram of Graphene.
The performances such as the high mobility just because of Graphene, Graphene is considered as one kind potentially following field effect transistor
Tube material.Although however, Graphene is very high as the mobility of raceway groove, due to the height between Graphene and metal electrode
Resistance seriously limits high performance grapheme transistor.Many reports are it has been shown that the contact resistance pair of Graphene and metal
Impact in graphene device has been over the impact of graphene-channel mobility, if not carrying out improveing contact resistance, stone
Black alkene effect transistor is opened electric current and will be subject to very big impact so that the Graphene of high mobility does not have not in all senses yet.
Therefore, the contact resistance of Graphene is controlled to have very great meaning to graphene device.
How to make a price reduction the contact resistance of graphene device, many researchs have obtained, and by different metals, obtain metal
The contact resistance contacting with Graphene is different, and the wherein contact with Graphene for the metal is divided into two kinds, and one kind is chemisorbed, another
Planting is physical absorption.Wherein chemical contact can destroy the structure of Graphene so that Graphene mobility reduces, and physical absorption pair
Graphene destruction is very little, but the contact resistance that physical absorption is formed is bigger than chemisorbed.The present invention is mainly Graphene and gold
The physical contact belonging to, forms Graphene and metal interface.By adjusting the thickness of the two-dimensional metallic layer being deposited on Graphene, from
And carry out the electric charge transfer on adjustment interface, and dipole and contact berrier are formed on interface, by attemperator's interracial contact potential barrier,
To reduce the purpose of Graphene contact resistance.This is a kind of effective and novel method, is promoted Graphene further
Application and the development of two-dimensional material base integrated circuit.
Content of the invention
It is an object of the invention to proposing a kind of new method being effectively reduced Graphene contact resistance.
The method reducing Graphene contact resistance proposed by the present invention, its basic ideas is by adjusting two-dimensional metallic layer
Thickness, thus adjusting the contact of Graphene and two-dimensional metallic layer, is effectively reduced contact berrier, by determining optimal two-dimensional gold
Belong to the thickness of layer, to make the contact resistance of Graphene minimum.By reducing the contact resistance of Graphene electrodes, thus effectively carrying
The performance of high graphene device.
The method reducing Graphene electrodes contact resistance using two-dimensional metallic thickness degree proposed by the present invention, concrete steps
For:
(1) growth is provided to have the sample of Graphene；
(2) method utilizing physical vapour deposition (PVD), deposits the ultra-thin two dimension of 0.1-5 nm different-thickness on Graphene
Metal level；
(3) the two-dimensional metallic layer-Graphene contact of different-thickness is measured by original position ultraviolet photoelectron spectroscopy (ups), point
Analysis and determination reach the minimum thickness of potential barrier, as optimal thickness d (d is a certain value in 0.1-5 nm) of two-dimensional metallic layer；
(4) method utilizing physical vapour deposition (PVD), deposits the two-dimensional metallic layer of optimal thickness d on graphene device；
(5) method utilizing physical vapour deposition (PVD), the metal m of deposit 20 200 nm thickness, form Graphene/two-dimensional gold
Belong to the device contact architectures of layer/metal m.
In the present invention, described two-dimensional metallic layer material is nickel, titanium, aluminium, palladium or cobalt etc..
In the present invention, the optimal thickness of described two-dimensional metallic layer, can be measured by original position ultraviolet photoelectron spectroscopy (ups),
Analysis determines.
In the present invention, described metal m can be gold, silver or platinum etc..
The inventive method, does not limit to grapheme material, is also applied in other two-dimensional material.
The inventive method, is also not limited to two-dimensional metallic layer, is also applied to bulk metal layer or other materials.
Further it is necessary first to there be Graphene sample, can be by the side of low-pressure chemical vapor deposition on copper sheet
The Graphene of method growth.The Graphene Structure of need of growth is complete, and the continuous Graphene of large area, is individual layer, and defect
Less, there is very high carrier mobility, as far as possible close to the good Graphene of quality.
Need original position multifunctional analysis equipment, can be physical vapour deposition (PVD) (pvd) and ultraviolet photoelectron spectroscopy (ups)
Equipment combines.These original position equipment all keep condition of high vacuum degree, 10-10Mbar, so guarantees two-dimensional metallic layer and stone
Do not polluted by air etc. when black alkene engaged test.By analyzing spectrum and the Graphene work function of ups test, analysis determines stone
The contact berrier of black alkene and two-dimensional metallic layer contact interface is it can be deduced that the contact berrier at interface and the thickness of two-dimensional metallic layer
Relation, presents V-shaped.Certain thickness two-dimensional metallic layer can make contact berrier minimum, so that the contact of Graphene electrodes
Resistance is minimum.The two-dimensional metallic thickness that contact berrier reaches minimum of a value is made to be optimal thickness d.
The method of the contact resistance being effectively reduced Graphene electrodes proposed by the present invention, convenient and simple.By effectively
Draw the contact berrier of Graphene and two-dimensional metallic layer, determine optimum thickness metal level, thus optimized reduction Graphene electricity
The contact resistance of pole.But also the contact that optimal metal is with Graphene can be selected, so that it is determined that best Graphene contact.From
And prepare the Graphene electrodes of the structure of Graphene/two-dimensional metallic layer/gold.
Brief description
Fig. 1 is Graphene basic structure schematic diagram.
Fig. 2 to Fig. 4 reduces Graphene electrodes contact resistance for present invention offer is a kind of using two-dimensional metallic thickness degree
Procedure schematic diagram.
Fig. 5 is operational flowchart of the present invention.
Specific embodiment
The present invention proposes a kind of method reducing Graphene electrodes contact resistance using two-dimensional metallic thickness degree.By control
The contact with Graphene for the two-dimensional metallic layer of different-thickness processed, thus adjusting the characteristic of both contact interface, thus reaching
Adjust the purpose of the contact resistance of Graphene electrodes.Effectively convenient by this method it may be determined that different metals and graphite
The contact condition of alkene, and optimal metal can be selected, as the electrode metal of Graphene, prepare optimal graphene device
Electrode.Described below be using the present invention reduced using two-dimensional metallic thickness Graphene contact resistance method reality
Apply example.
In in figure, for convenience of explanation, structure size and ratio do not represent actual size.
First, provide substrate sample, it is to give birth to by low-pressure chemical vapor deposition method in 25 um thickness copper (cu) 101
Long Graphene 102.The Graphene of wherein growth is smooth, individual layer, very big area, does not have defect, has very high load
Stream transport factor.The sectional view of the wherein Graphene sample of growth is as shown in Figure 2.
Then, Graphene sample is passed in the multifunctional analysis system of original position, and this system includes physical vapour deposition (PVD)
And ultraviolet photoelectron spectroscopy (ups) equipment (pvd).Graphene sample is delivered in pvd equipment, Graphene sample deposits
The thick Titanium of 0.6 nm.Concretely comprise the following steps.When in reaction chamber, vacuum reaches 5.3 × 10-3Mbar, starts in deposit gold
Belong to, wherein rotary sample is 40 rpms, deposit 8 seconds.After deposit terminates, form two-dimensional metallic layer 103.Then by sample from
Pvd passes in ups by in-situ system, it is to avoid air impact sample.By ups come test sample.Shape is as shown in Figure 3.
Repeat said process, sample is passed to pvd deposit two-dimensional metallic, is then sent through ups test, constantly carries out above-mentioned mistake
Journey, until the thickness of metal reaches 10 nm.
By analyzing the ups spectrum at interface tested and the work function of Graphene, draw Graphene and two-dimensional metallic stratum boundary
The contact berrier height in face assumes V-shaped with the variation diagram of two-dimensional metallic thickness degree, curve map.The thickness of metal can be adjusted, make
Obtain contact berrier and reach minimum, thus reducing contact resistance., as shown in figure 4, being barrier height taking two-dimensional metallic titanium (ti) as a example
With the variation diagram of the thickness of two-dimensional metallic titanium, can analyze when the thickness of titanium is 2.2 nm by curve map, contact berrier
Minimum.So that it is determined that the thickness of optimal two-dimensional metallic.
So, we can prepare such electrode structure to Graphene, is the thick two-dimensional metallic of Graphene/2.2 nm
The thick gold of titanium layer/50 nm.So complete the preparation of Graphene electrodes, by this utilization two-dimensional metallic thickness, can be effectively
Reduce the contact resistance of Graphene electrodes.
As described above, without departing from the spirit and scope of the invention, can also constitute many has very big difference
Embodiment.It should be appreciated that except as defined by the appended claims, the invention is not restricted to described concrete in the description
Embodiment.
Claims (3)
1. a kind of method selecting to be suitable for two-dimensional metallic thickness degree reduction Graphene electrodes contact resistance is it is characterised in that concrete walk
Suddenly it is:
(1) growth is provided to have the sample of Graphene；
(2) method utilizing physical vapour deposition (PVD), deposits the ultra-thin two-dimension metal level of 0.1-5 nm different-thickness on Graphene；
(3) measure the two-dimensional metallic layer-Graphene contact of different-thickness by original position ultraviolet photoelectron spectroscopy, analysis and determination reach
To the thickness of minimum potential barrier, the as optimal thickness of two-dimensional metallic layer；
Wherein, using original position multifunctional analysis equipment, physical vapour deposition (PVD) and ultraviolet photoelectron spectroscopy equipment are combined；
These original position equipment keep condition of high vacuum degree 10-10mbar；
(4) method utilizing physical vapour deposition (PVD), deposits the two-dimensional metallic layer of optimal thickness on graphene device；
(5) method utilizing physical vapour deposition (PVD), the metal m of deposit 20 200 nm thickness, form Graphene/two-dimensional metallic
The device contact architectures of layer/metal m.
2. the method selecting to be suitable for two-dimensional metallic thickness degree reduction Graphene electrodes contact resistance according to claim 1,
It is characterized in that: described two-dimensional metallic layer material is nickel, titanium, aluminium, palladium or cobalt.
3. the method selecting to be suitable for two-dimensional metallic thickness degree reduction Graphene electrodes contact resistance according to claim 1,
It is characterized in that: described metal m is gold, silver or platinum.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410389035.9A CN104157561B (en) | 2014-08-08 | 2014-08-08 | Method for reducing contact resistance of graphene electrode by using thickness of two dimensional metal layer |
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| CN201410389035.9A CN104157561B (en) | 2014-08-08 | 2014-08-08 | Method for reducing contact resistance of graphene electrode by using thickness of two dimensional metal layer |
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| CN104157561A CN104157561A (en) | 2014-11-19 |
| CN104157561B true CN104157561B (en) | 2017-01-18 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103840017B (en) * | 2014-03-06 | 2016-06-08 | 常熟理工学院 | A kind of Graphene silica-based solar cell and manufacture method thereof |
| CN111584655B (en) * | 2020-05-20 | 2021-02-19 | 魔童智能科技(扬州)有限公司 | Method for improving ohmic contact |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5294486A (en) * | 1990-10-22 | 1994-03-15 | International Business Machines Corporation | Barrier improvement in thin films |
| US6770353B1 (en) * | 2003-01-13 | 2004-08-03 | Hewlett-Packard Development Company, L.P. | Co-deposited films with nano-columnar structures and formation process |
| CN102064189A (en) * | 2010-12-06 | 2011-05-18 | 苏州纳维科技有限公司 | Metal-semiconductor electrode structure and preparation method thereof |
| CN102800810A (en) * | 2011-05-27 | 2012-11-28 | 浦项工科大学校产学协力团 | Electrode and electronic device comprising the same |
| CN102923640A (en) * | 2011-08-12 | 2013-02-13 | Nxp股份有限公司 | Semiconductor device having Au-Cu electrodes and method of manufacturing semiconductor device |
| CN103296065A (en) * | 2013-06-07 | 2013-09-11 | 中国科学院微电子研究所 | Structure for reducing contact resistance of graphene material and metal |
-
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- 2014-08-08 CN CN201410389035.9A patent/CN104157561B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5294486A (en) * | 1990-10-22 | 1994-03-15 | International Business Machines Corporation | Barrier improvement in thin films |
| US6770353B1 (en) * | 2003-01-13 | 2004-08-03 | Hewlett-Packard Development Company, L.P. | Co-deposited films with nano-columnar structures and formation process |
| CN102064189A (en) * | 2010-12-06 | 2011-05-18 | 苏州纳维科技有限公司 | Metal-semiconductor electrode structure and preparation method thereof |
| CN102800810A (en) * | 2011-05-27 | 2012-11-28 | 浦项工科大学校产学协力团 | Electrode and electronic device comprising the same |
| CN102923640A (en) * | 2011-08-12 | 2013-02-13 | Nxp股份有限公司 | Semiconductor device having Au-Cu electrodes and method of manufacturing semiconductor device |
| CN103296065A (en) * | 2013-06-07 | 2013-09-11 | 中国科学院微电子研究所 | Structure for reducing contact resistance of graphene material and metal |
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