CN104157229A - Detecting method and equipment for array substrate - Google Patents
Detecting method and equipment for array substrate Download PDFInfo
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- CN104157229A CN104157229A CN201410370657.7A CN201410370657A CN104157229A CN 104157229 A CN104157229 A CN 104157229A CN 201410370657 A CN201410370657 A CN 201410370657A CN 104157229 A CN104157229 A CN 104157229A
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Abstract
The invention discloses a detecting method and equipment for an array substrate to realize the accurate detection on poor pixels in displaying products with high pixel number. The pixel detecting method for the array substrate comprises the following steps: in the same area, pre-setting the corresponding relation between the imaging sensor pixel group number and the TFT pixel number of the same row or the same column on the array substrate; when the detecting operation is implemented for N times, determining the offset of the incident angle of incident light entering a spectroscope in each detecting process relative to the incident angle of incident light entering the spectroscope in the previous detecting process according to the corresponding relation; during the N-time detecting process, adjusting the incident angle of the current incident light entering the spectroscope according to the offset to enable the positions of N TFT pixels corresponding to reflected light received by each imaging sensor pixel group to translate by one TFT pixel in the specified direction when the current detecting process is compared with the previous detecting process; determining the positions of poor TFT pixels according to the light intensity results collected by the imaging sensor pixel groups during the N-times detecting process.
Description
Technical field
The present invention relates to display technique field, relate in particular to a kind of detection method and equipment of array base palte.
Background technology
Along with the variation of flat panel display development, product bad also presents variation.Reducing production costs and improving yields is the target that each producer is pursued always.Therefore, in the process of making array base palte, need to use multiple array detection equipment, for testing product after having made each procedure, whether belong to non-defective unit.
In the process of array base palte of making thin film transistor LCD device, the checkout equipment of thin film transistor (TFT) array is mainly divided into two classes, one class is optical detection apparatus, particle for detection of the array circuit on array base palte, this particle may be from airborne dust or from the spot in coating process, but when this particle is enough large, can damage the electrical detection equipment that follow-up pair array circuit detects; Another kind of is electrical detection equipment, and in situation about powering up for array circuit, whether detection thin film transistor (TFT) pixel exists and cause bad factor, to repair in time.
Figure l is the structural representation of existing a kind of electrical detection equipment, as shown in Figure l, described electrical detection equipment comprises light source 101, spectroscope 102, object lens 103, modulator 104, charge coupled cell (Charge coupled Device, CCD) imageing sensor 106 forming, and image processor 107; Wherein, described modulator 104 comprises glass plate, reflective mirror, is arranged at electrode and the liquid crystal between glass plate and reflective mirror on glass plate.Described spectroscope 102 is semi-transparent semi-reflecting lens, for the light that light source is launched, reflexes to described object lens 103, to the light transmission that described modulator 104 is reflected; Described object lens 103 are lens, for by the beam spread of incident or converge; Described imageing sensor 106, is responsible for gathering the light intensity that described modulator 104 returns; The light intensity data that described image processor 107 gathers for the treatment of CCD.
The incident light that light source 101 sends, after the reflection of spectroscope 102, then enters modulator 104 through object lens 103, and then is radiated on array base palte to be detected 105, meanwhile, electrode at described modulator 104 adds 320V voltage, after array base palte 105 powers up, can between the TFT of array base palte 105 pixel electrode and the electrode of modulator 104, form electric field, and there is different deflection according to described electric field intensity size in liquid crystal in modulator 104, thereby the difference of the liquid crystal deflection direction in modulator 104 makes the reflected light reflecting back through liquid crystal also with regard to difference, reflected light enters imageing sensor 106 more successively after the transmission of object lens 103 and the transmission of spectroscope 102, imageing sensor 106 is transferred to image processor 107 after reflected light is converted into digital signal, image processor 107 and then judge that according to catoptrical intensity whether the pixel on array base palte 105 is normal.
Number of pixels (the PPI having due to per inch, Pixels Per Inch) highlyer represent that display screen can show image with higher density, therefore, the product of high PPI is pursued by user and producer always, and the product of high PPI refers to the product higher than 300PPI here.And the process of producing, the analytic ability of electrical detection equipment is determining to produce how high PPI, in figure l, modulator 104 is of a size of 130mm * 130mm, and the analytic ability of imageing sensor 106 is 4K * 4K, wherein, 1K=1000, that is: horizontal and vertical direction 4K the photosensitive unit that distributing respectively, can calculate according to detecting principle, and the resolution of electrical detection equipment is 32.5 μ m (130mm/4K), Fig. 2 is that existing electrical detection equipment modulator when detection Pixel Dimensions is less than the size of photosensitive unit is radiated at the illumination range schematic diagram on array base palte, as shown in Figure 2, because Pixel Dimensions is less than 32.5 μ m, that is: Pixel Dimensions has been less than the size of the photosensitive unit of a charge-coupled image sensor, through modulator, be radiated at illumination range on array base palte much larger than Pixel Dimensions, the Detection capability of existing electrical detection equipment cannot detect the pixel that Pixel Dimensions is less than 32.5 μ m, therefore, for the bad pixel in the demonstration product of high PPI, cannot accurately detect.
Summary of the invention
The detection method and the equipment that the object of this invention is to provide a kind of array base palte, show the accurate detection of bad TFT pixel in product to realize high number of pixels.
The object of the invention is to be achieved through the following technical solutions:
The embodiment of the present invention provides a kind of detection method of array base palte, comprising:
Preset in same area, go together or the corresponding relation of the TFT number of pixels of same column on image sensor pixel group number and array base palte, described corresponding relation is 1:N, and N is more than or equal to 2 integer;
With described corresponding relation, determine and detect for N time in action, each time the side-play amount of the spectroscopical incident angle of incident light incident in the more front testing process of the spectroscopical incident angle of incident light incident in testing process;
According to described side-play amount in N testing process, regulate the spectroscopical incident angle of current incident light incident, make to compare a front testing process in current detection process, the position of the corresponding N of reflected light that described in each, image sensor pixel group receives a described TFT pixel is along described TFT pixel of prescribed direction translation;
According to the light intensity result that in N testing process, image sensor pixel group gathers described in each, determine the position of bad described TFT pixel.
Preferably, the spectroscopical incident angle of the current incident light incident of described adjusting, comprising:
By adjusting the position of light source, regulate the spectroscopical incident angle of current incident light incident.
Preferably, the spectroscopical incident angle of the current incident light incident of described adjusting, comprising:
By adjusting spectroscopical angle, regulate the spectroscopical incident angle of current incident light incident.
Preferably, the spectroscopical incident angle of the current incident light incident of described adjusting, comprising:
N light source is set, and the corresponding incident angle of side-play amount described in each light source correspondence one;
By applying different light sources, regulate the spectroscopical incident angle of current incident light incident.
Preferably, described prescribed direction is line direction; Or,
Described prescribed direction is column direction.
Preferably, described according to the testing result that in N testing process, image sensor pixel group obtains described in each, determine the position of bad described TFT pixel, comprising:
The light intensity result that obtain, that comprise same described TFT pixel according to a plurality of described image sensor pixel groups, determines the average voltage level of light intensity structure described in each, if average voltage level is unequal described in each, determines that TFT pixel is bad described in this.
Embodiment of the present invention beneficial effect is as follows: by regulating the spectroscopical incident angle of incident light incident, make in N testing process, the TFT pixel that each image sensor pixel group detects changes, according to N testing result of the same TFT pixel of correspondence, can determine whether this TFT pixel exists bad, thereby realize the accurate detection that high PPI pixel is shown to the bad TFT pixel in product.
The embodiment of the present invention provides a kind of pixel detection equipment of array base palte, comprising:
Setting unit, goes together on image sensor pixel group and array base palte or the corresponding relation of the TFT pixel of same column for setting, and described corresponding relation is 1:N, and N is more than or equal to 2 integer;
Side-play amount unit, detects action for N time for determining with described corresponding relation, each time the side-play amount of the spectroscopical incident angle of incident light incident in the more front testing process of the spectroscopical incident angle of incident light incident in testing process;
Incident angle adjustment unit, be used for according to described side-play amount N testing process, regulate the spectroscopical incident angle of current incident light incident, make to compare a front testing process in current detection process, the position of the corresponding N of reflected light that described in each, image sensor pixel group receives a described TFT pixel is along described TFT pixel of prescribed direction translation;
Result identifying unit, for according to N testing process light intensity result that image sensor pixel group gathers described in each, determines the position of bad described TFT pixel.
Preferably, described incident angle adjustment unit, by adjusting the position of light source, regulates the spectroscopical incident angle of current incident light incident.
Preferably, described incident angle adjustment unit, by adjusting spectroscopical angle, regulates the spectroscopical incident angle of current incident light incident.
Preferably, described checkout equipment comprises N light source, and the corresponding incident angle of side-play amount described in each light source correspondence one;
Described incident angle adjustment unit, regulates the spectroscopical incident angle of current incident light incident by applying different light sources.
Preferably, described result identifying unit, the light intensity result that obtain, that comprise same described TFT pixel according to a plurality of described image sensor pixel groups, determine the average voltage level of light intensity structure described in each, if average voltage level is unequal described in each, determine that TFT pixel is bad described in this.
Embodiment of the present invention beneficial effect is as follows: by regulating the spectroscopical incident angle of incident light incident, make in N testing process, the TFT pixel that each image sensor pixel group detects changes, according to N testing result of the same TFT pixel of correspondence, can determine whether this TFT pixel exists bad, thereby realize the accurate detection that high PPI pixel is shown to the bad TFT pixel in product.
Accompanying drawing explanation
Fig. 1 is the structural representation of the pixel detection equipment of a kind of array base palte in prior art;
Fig. 2 is existing checkout equipment incident light illumination range schematic diagram when TFT Pixel Dimensions is less than image sensor pixel size;
The process flow diagram of the detection method that Fig. 3 is a kind of array base palte of providing in the embodiment of the present invention one;
Fig. 4 is the corresponding schematic diagram of testing process image sensor pixel group and TFT pixel for the first time in the embodiment of the present invention two;
Fig. 5 is the corresponding schematic diagram of testing process image sensor pixel group and TFT pixel for the second time in the embodiment of the present invention two;
The structured flowchart of the pixel detection equipment of a kind of array base palte that Fig. 6 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with Figure of description, the implementation procedure of the embodiment of the present invention is elaborated.It should be noted that same or similar label from start to finish represents same or similar element or has the element of identical or similar functions.Below by the embodiment being described with reference to the drawings, be exemplary, only for explaining the present invention, and can not be interpreted as limitation of the present invention.
Embodiment mono-
Referring to Fig. 3, the embodiment of the present invention provides a kind of detection method of array base palte, comprising:
301, preset in equal area, on image sensor pixel group number and array base palte, to go together or the corresponding relation of the TFT number of pixels of same column, corresponding relation is 1:N, N is more than or equal to 2 integer.
Demonstration product for high PPI, its TFT Pixel Dimensions is less than 32.5 μ m, that is: TFT Pixel Dimensions has been less than the size of an image sensor pixel, therefore by a plurality of image sensor pixel composing images sensor pixel groups, each image sensor pixel group can gather the intensity information of a plurality of TFT pixels.Preset the corresponding relation of image sensor pixel group and TFT pixel, so that the follow-up N that image sensor pixel group is detected a TFT pixel is carried out identification.
In the present embodiment, imageing sensor can form for charge coupled cell (Charge coupled Device, CCD), also can be referred to as ccd image sensor.
302, with corresponding relation, determine and detect for N time in action, each time the side-play amount of the spectroscopical incident angle of incident light incident in the more front testing process of the spectroscopical incident angle of incident light incident in testing process.
Due to the corresponding a plurality of TFT pixels of an image sensor pixel group, therefore the reflected light that image sensor pixel group pixel receives cannot reflect that some TFT pixels are bad, also mean that whether bad concluding cannot be completed by an independent image sensor pixel group for a certain TFT pixel, need a TFT pixel to form different TFT pixel groups from other different pixels, different TFT pixel groups is detected, by the testing result of a plurality of different pixels groups, determine that whether a total TFT pixel of the plurality of TFT pixel groups is bad.In order to reach this purpose, in the time of need to making the spectroscope of incident light incident checkout equipment, there is side-play amount, be that each incident angle is all different, so that comprise that the corresponding reflected light of different TFT pixel groups of same TFT pixel is gathered by different image sensor pixel groups.
In embodiment of the present invention practical application, can cross the adjusting that following method realizes incident angle:
For example, by adjusting the position of light source, regulate the spectroscopical incident angle of current incident light incident; Again for example, by adjusting spectroscopical angle, regulate the spectroscopical incident angle of current incident light incident; Again for example, N light source is set, and the corresponding incident angle of the corresponding side-play amount of each light source, by applying different light sources, regulate the spectroscopical incident angle of current incident light incident.Certainly, be more than the optimal way in a plurality of adjusting incident angle modes, only in order to illustrate, the present invention is not as limit.
303, according to side-play amount in N testing process, regulate the spectroscopical incident angle of current incident light incident, make to compare a front testing process in current detection process, the position of the corresponding N of the reflected light TFT pixel that each image sensor pixel group receives is along TFT pixel of prescribed direction translation.
In the present embodiment, the reflected light that image sensor pixel group receives has directly reflected the position of TFT pixel, if the direction of the position translation of the TFT pixel that an image sensor pixel group detects is different, to judging that bad TFT pixel has larger difficulty, therefore in the present embodiment, the prescribed direction for translation is generally line direction or column direction, and the direction of translation is identical in whole testing process.
304, according to the light intensity result that in N testing process, each image sensor pixel group gathers, determine the position of bad TFT pixel.
In the present embodiment, can light intensity result that obtain according to a plurality of image sensor pixel groups, that comprise same TFT pixel, determine the average voltage level of each light intensity structure, if each average voltage level is unequal, determine that this TFT pixel is bad.
Embodiment of the present invention beneficial effect is as follows: by regulating the spectroscopical incident angle of incident light incident, make in N testing process, the TFT pixel that each image sensor pixel group detects changes, according to N testing result of the same TFT pixel of correspondence, can determine whether this TFT pixel exists bad, thereby realize the accurate detection that high PPI pixel is shown to the bad TFT pixel in product.
Embodiment bis-
For the detection method of the more detailed description embodiment of the present invention one, in the present embodiment, corresponding two the TFT Pixel Dimensions of each image sensor pixel packet size of take describe as example.
Referring to Fig. 4, when detecting high PPI demonstration product, image sensor pixel group and TFT pixel corresponding relation are more than 1 pair, the coefficient result of quality that the light intensity receiving due to an image sensor pixel group is a plurality of pixels.If certain TFT pixel has problem, its corresponding image sensor pixel group receives light intensity and is converted to light intensity that magnitude of voltage and other image sensor pixel groups receive to be converted to magnitude of voltage difference less, it is very bad that checkout equipment can not determine whether this TFT pixel has, for example:
(it is 8V to the resulting testing result of combination Fig. 4 as shown in table 1 that the light intensity that image sensor pixel group receives is converted to magnitude of voltage, corresponding TFT pixel is non-defective unit), bad for the TFT pixel 5 shown in Fig. 4, corresponding image sensor pixel group 3 receives light intensity, and to be converted to voltage be 7V, image sensor pixel group 1, image sensor pixel group 2 and image sensor pixel group 4 receive light intensity conversion and are voltage into 8V, difference is (8V-7V)/8V=12.5%, and due to the too little checkout equipment of difference, cannot to have determined whether that TFT pixel has bad.
Table 1
In the embodiment of the present invention, by regulating incident angle so that different image sensor pixel groups detects the TFT pixel groups that same TFT pixel and different pixels form respectively.While being 1:2 for the corresponding relation of each image sensor pixel group and TFT pixel, for a certain TFT pixel, need twice detection determine that whether this TFT pixel is bad.In testing process, with the first incident angle incident light incident, now TFT pixel and image sensor pixel group corresponding relation are as shown in Figure 4 for the first time; In testing process, with the incident light incident of the second incident angle, relative the first incident angle of the second incident angle has side-play amount for the second time, and now TFT pixel and image sensor pixel group corresponding relation are as shown in Figure 5.In the second testing process, the position of the TFT pixel that the reflected light of image sensor pixel group reception is corresponding is compared for the first time and is offset a TFT pixel in testing process.Concrete, for the first time in testing process, the corresponding TFT pixel 1 of image sensor pixel group 1 and TFT pixel 2, the corresponding TFT pixel 3 of image sensor pixel group 2 and TFT pixel 4, the corresponding TFT pixel 5 of image sensor pixel group 3 and TFT pixel 6, the corresponding TFT pixel 7 of image sensor pixel group 4 and TFT pixel 8; For the second time in testing process, the corresponding TFT pixel 1 of image sensor pixel group 1, the corresponding TFT pixel 2 of image sensor pixel group 2 and TFT pixel 3, the corresponding TFT pixel 4 of image sensor pixel group 3 and TFT pixel 5, the corresponding TFT pixel 6 of image sensor pixel group 4 and TFT pixel 7.The result detecting is for the second time as shown in table 2:
Table 2
Because image sensor pixel group 2 and image sensor pixel group 4 in the result detecting for the first time receive light intensity, be converted to magnitude of voltage and be 8, therefore detect and judge for the first time: TFT pixel 3, TFT pixel 4, TFT pixel 7 and the TFT pixel 8 of image sensor pixel group 2 and image sensor pixel group 4 correspondences are all without bad.Image sensor pixel group 3 receives light intensity and is converted to magnitude of voltage and is 7, illustrates in TFT pixel 5 that it is corresponding and TFT pixel 6 and has a pixel may exist bad.
In the result detecting for the second time, image sensor pixel group 2 and image sensor pixel group 4 receive light intensity and are converted to magnitude of voltage and are 8, therefore detect and judge for the second time: TFT pixel 2, TFT pixel 3, TFT pixel 6 and the TFT pixel 7 of image sensor pixel group 2 and image sensor pixel group 4 correspondences are all without bad.Image sensor pixel group 3 receives light intensity and is converted to magnitude of voltage and is 7, illustrates in TFT pixel 4 that it is corresponding and TFT pixel 5 and has a pixel may exist bad.
In conjunction with the result of twice detection, can judge that TFT pixel 4 and TFT pixel 6 are all without bad, so voltage is 8V, can infer that the voltage that obtains TFT pixel 5 is 6V.TFT pixel 5 is (8V-6V)/8V=25% with the difference of other TFT pixels, and owing to differing greatly, thereby it is bad to have determined whether that TFT pixel 5 exists.
Embodiment of the present invention beneficial effect is as follows: by regulating the spectroscopical incident angle of incident light incident, make in twice testing process, the TFT pixel that each image sensor pixel group detects changes, according to two testing results of the same TFT pixel of correspondence, can determine whether this TFT pixel exists bad, thereby realize the accurate detection that high PPI pixel is shown to the bad TFT pixel in product.
Embodiment tri-
Referring to Fig. 6, the embodiment of the present invention provides a kind of pixel detection equipment 600 of array base palte, comprising:
Setting unit 601, for setting in equal area, goes together on image sensor pixel group number and array base palte or the corresponding relation of the TFT number of pixels of same column, and corresponding relation is 1:N, and N is more than or equal to 2 integer.
Side-play amount unit 602, detects action for N time for determining with corresponding relation, each time the side-play amount of the spectroscopical incident angle of incident light incident in the more front testing process of the spectroscopical incident angle of incident light incident in testing process.
Incident angle adjustment unit 603, be used for according to side-play amount N testing process, regulate the spectroscopical incident angle of current incident light incident, make to compare a front testing process in current detection process, the position of the corresponding N of the reflected light TFT pixel that each CCD receives is along TFT pixel of prescribed direction translation.
Result identifying unit 604, for according to the light intensity result of N each image sensor pixel group collection of testing process, determines the position of bad TFT pixel.
Each unit specific implementation in the present embodiment is as follows:
Setting unit 601 can be passed through human-computer interaction interface, arrange in equal area, on image sensor pixel group number and array base palte, go together or the corresponding relation of the TFT number of pixels of same column, and can be stored in storer (as the storage space of hard disk, flash memory or programmable logic controller (PLC)), thereby realize follow-up calling.Also this corresponding relation setting in advance can be stored in storer (as the storage space of hard disk, flash memory or programmable logic controller (PLC)), by the selection of setting unit 601, the corresponding relation set needing, from by other cell calls.
Side-play amount unit 602 can be realized by central processing unit or programmable logic controller (PLC), central processing unit or programmable logic controller (PLC) hardware are according to the method for setting, with corresponding relation, determine and detect for N time in action, each time the side-play amount of the spectroscopical incident angle of incident light incident in the more front testing process of the spectroscopical incident angle of incident light incident in testing process.The method of this setting is the program setting in advance in central processing unit or programmable logic controller (PLC).
Incident angle adjustment unit 603 can be realized with the combination of software-driven hardware.For example, expansion link and motor can be provided, expansion link connects light source, incident angle adjustment unit 603 is controlled motor and is made expansion link motion, thereby light source moves, it can be only the program that realizes in software that realization makes incident angle adjustment unit 603, and does not consider by which kind of hardware to be realized the adjustment of the spectroscopical incident angle of current incident light incident.Similar, expansion link also can be connected with spectroscope 102 as shown in Figure 1, controls the deflection angle of spectroscope 102, thereby realizes the adjustment of the incident angle of current incident light incident spectroscope 102.In practical application, there is multiple hardwares to coordinate to realize above-described embodiment with incident angle adjustment unit 603, do not repeat them here.
Result identifying unit 604 can be realized by central processing unit or programmable logic controller (PLC) equally, central processing unit or programmable logic controller (PLC), according to the light intensity result that in N testing process, each image sensor pixel group gathers, calculate or judge the position of bad TFT pixel.
Preferably, incident angle adjustment unit 603, by adjusting the position of light source, regulates the spectroscopical incident angle of current incident light incident.
Preferably, incident angle adjustment unit 603, by adjusting spectroscopical angle, regulates the spectroscopical incident angle of current incident light incident.
Preferably, checkout equipment comprises N light source, and the corresponding incident angle of the corresponding side-play amount of each light source;
Incident angle adjustment unit 603, regulates the spectroscopical incident angle of current incident light incident by applying different light sources.
Preferably, result identifying unit 604, the light intensity result obtaining according to a plurality of image sensor pixel groups, comprise same TFT pixel, determines the average voltage level of each light intensity structure, if each average voltage level is unequal, determine that this TFT pixel is bad.
Embodiment of the present invention beneficial effect is as follows: by regulating the spectroscopical incident angle of incident light incident, make in N testing process, the TFT pixel that each image sensor pixel group detects changes, according to N testing result of the same TFT pixel of correspondence, can determine whether this TFT pixel exists bad, thereby realize the accurate detection that high PPI pixel is shown to the bad TFT pixel in product.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (11)
1. a detection method for array base palte, is characterized in that, comprising:
Preset in same area, go together or the corresponding relation of the TFT number of pixels of same column on image sensor pixel group number and array base palte, described corresponding relation is 1:N, and N is more than or equal to 2 integer;
With described corresponding relation, determine and detect for N time in action, each time the side-play amount of the spectroscopical incident angle of incident light incident in the more front testing process of the spectroscopical incident angle of incident light incident in testing process;
According to described side-play amount in N testing process, regulate the spectroscopical incident angle of current incident light incident, make to compare a front testing process in current detection process, the position of the corresponding N of reflected light that described in each, image sensor pixel group receives a described TFT pixel is along described TFT pixel of prescribed direction translation;
According to the light intensity result that in N testing process, image sensor pixel group gathers described in each, determine the position of bad described TFT pixel.
2. the method for claim 1, is characterized in that, the spectroscopical incident angle of the current incident light incident of described adjusting, comprising:
By adjustment, adjust the position of light source, regulate the spectroscopical incident angle of current incident light incident.
3. the method for claim 1, is characterized in that, the spectroscopical incident angle of the current incident light incident of described adjusting, comprising:
By adjusting spectroscope, regulate the spectroscopical incident angle of current incident light incident.
4. the method for claim 1, is characterized in that, the spectroscopical incident angle of the current incident light incident of described adjusting, comprising:
N light source is set, and the corresponding incident angle of side-play amount described in each light source correspondence one;
By applying different light sources, regulate the spectroscopical incident angle of current incident light incident.
5. the method as described in claim 1 to 4 any one, is characterized in that, described prescribed direction is line direction; Or,
Described prescribed direction is column direction.
6. the method for claim 1, is characterized in that, described according to the testing result that in N testing process, image sensor pixel group obtains described in each, determines the position of bad described TFT pixel, comprising:
The light intensity result that obtain, that comprise same described TFT pixel according to a plurality of described image sensor pixel groups, determines the average voltage level of light intensity structure described in each, if average voltage level is unequal described in each, determines that TFT pixel is bad described in this.
7. a pixel detection equipment for array base palte, is characterized in that, comprising:
Setting unit, goes together on image sensor pixel group and array base palte or the corresponding relation of the TFT pixel of same column for setting, and described corresponding relation is 1:N, and N is more than or equal to 2 integer;
Side-play amount unit, detects action for N time for determining with described corresponding relation, each time the side-play amount of the spectroscopical incident angle of incident light incident in the more front testing process of the spectroscopical incident angle of incident light incident in testing process;
Incident angle adjustment unit, be used for according to described side-play amount N testing process, regulate the spectroscopical incident angle of current incident light incident, make to compare a front testing process in current detection process, the position of the corresponding N of reflected light that described in each, image sensor pixel group receives a described TFT pixel is along described TFT pixel of prescribed direction translation;
Result identifying unit, for according to N testing process light intensity result that image sensor pixel group gathers described in each, determines the position of bad described TFT pixel.
8. equipment as claimed in claim 7, is characterized in that, described incident angle adjustment unit, by adjusting the position of light source, regulates the spectroscopical incident angle of current incident light incident.
9. equipment as claimed in claim 7, is characterized in that, described incident angle adjustment unit, by adjusting spectroscope, regulates the spectroscopical incident angle of current incident light incident.
10. equipment as claimed in claim 7, is characterized in that, described checkout equipment comprises N light source, and the corresponding incident angle of side-play amount described in each light source correspondence one;
Described incident angle adjustment unit, regulates the spectroscopical incident angle of current incident light incident by applying different light sources.
11. equipment as claimed in claim 7, it is characterized in that, described result identifying unit, the light intensity result that obtain, that comprise same described TFT pixel according to a plurality of described image sensor pixel groups, determine the average voltage level of light intensity structure described in each, if average voltage level is unequal described in each, determine that TFT pixel is bad described in this.
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| CN110770816A (en) * | 2017-06-16 | 2020-02-07 | Jvc建伍株式会社 | Display system, image processing device, pixel shift display device, image processing method, display method, and program |
| CN115014724A (en) * | 2022-08-10 | 2022-09-06 | 歌尔光学科技有限公司 | System, method and device for testing diffraction light waveguide |
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| US4247203A (en) * | 1978-04-03 | 1981-01-27 | Kla Instrument Corporation | Automatic photomask inspection system and apparatus |
| CN101487934B (en) * | 2009-02-10 | 2011-02-09 | 友达光电股份有限公司 | Optical detection apparatus and method |
| CN203606585U (en) * | 2013-10-30 | 2014-05-21 | 北京京东方光电科技有限公司 | Electrical detection equipment and array detection system |
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| CN110770816A (en) * | 2017-06-16 | 2020-02-07 | Jvc建伍株式会社 | Display system, image processing device, pixel shift display device, image processing method, display method, and program |
| CN115014724A (en) * | 2022-08-10 | 2022-09-06 | 歌尔光学科技有限公司 | System, method and device for testing diffraction light waveguide |
| CN115014724B (en) * | 2022-08-10 | 2022-11-22 | 歌尔光学科技有限公司 | System, method and device for testing diffraction light waveguide |
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