CN104155302B - The method of detecting defects in the silicon crystal - Google Patents

The method of detecting defects in the silicon crystal Download PDF

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CN104155302B
CN104155302B CN 201410314199 CN201410314199A CN104155302B CN 104155302 B CN104155302 B CN 104155302B CN 201410314199 CN201410314199 CN 201410314199 CN 201410314199 A CN201410314199 A CN 201410314199A CN 104155302 B CN104155302 B CN 104155302B
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silicon
test sample
method
crystal defects
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CN104155302A (en )
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华佑南
李晓旻
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胜科纳米(苏州)有限公司
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Abstract

本发明揭示了一种检测硅晶体缺陷的方法。 The present invention discloses a method for detecting crystal defects of silicon. 该方法包括:提供测试样品;将所述测试样品浸入第一溶液去除所述多晶硅层之上的各层;将所述测试样品浸入第二溶液去除所述多晶硅层,使得硅基片全裸;将所述测试样品浸入第三溶液刻划硅晶体缺陷;用光学显微镜检查所述测试样品上的硅晶体缺陷,并拍摄光学显微镜照片。 The method comprising: providing a test sample; test sample was immersed in the first solution, removing the layers on the polysilicon layer; the test sample is immersed in a solution of removing the second polysilicon layer, so that the naked silicon substrate; and the test sample was immersed in the third solution scribing silicon crystal defects; silicon crystal defects on inspection of the test sample with an optical microscope and an optical microscope photograph shooting. 本发明的方法确保了硅基片的全裸以及硅晶体缺陷的有效刻划。 The method of the present invention ensures an effective and scoring naked silicon crystal defects in a silicon substrate. 并且操作简便,快速,效率高,测量结果准确和重复性好。 And a simple, fast, efficient, accurate and reproducible measurement results.

Description

检测硅晶体缺陷的方法 The method of detecting defects in the silicon crystal

技术领域 FIELD

[0001]本发明涉及半导体技术领域,特别是涉及一种检测硅晶体缺陷的方法。 [0001] The present invention relates to semiconductor technology, and more particularly to a method for detecting crystal defects of silicon.

背景技术 Background technique

[0002]在半导体晶片圆盘制造中,基片上硅晶体缺陷直接影响到晶圆的产率。 [0002] In the disk manufacturing a semiconductor wafer, the silicon crystal defects on the substrate directly affects the yield of the wafer. 所以在一般的失效分析中铬酸(WRIGHT)刻蚀方法常用为晶圆基片上硅晶体缺陷的刻划和分析,并以硅晶体缺陷的晶格、晶相、形状和大小以判断硅晶体缺陷的导因。 Therefore, in a general failure analysis chromic acid (WRIGHT) etching method used for the analysis and scoring of crystal defects on the wafer silicon substrate and the silicon crystal lattice defects, crystal phase, to determine the shape and size of silicon crystal defects the cause them.

[0003]但是在实际的失效分析中要获得成功的和重复性好的刻划结果却很难。 [0003] However, in the actual failure analysis to be successful and reproducible results are difficult to characterize. 目前,在剥层过程中,多晶硅(Poly-Si)的剥离很困难,特别是宽层多晶硅(Poly-Si),用氢氟酸(HF)难以彻底去除。 Currently, the process of delamination, peeling polysilicon (Poly-Si) is difficult, especially wide layer of polysilicon (Poly-Si), with hydrofluoric acid (HF) difficult to completely remove.

[0004] 一种常见的传统的方法是在用HF酸液剥层的同时用棉花棍摩擦多晶硅(Poly-Si)处帮助去除,也有采用蓝粘膜来粘除多晶硅(Poly-Si)。 [0004] One common conventional approach is to assist in the removal of the cotton swab with a friction polysilicon (Poly-Si) while the peel layer with HF acid, are also employed in addition to stick to mucosal blue polysilicon (Poly-Si). 但这些方法不仅费时费力,而且难以彻底去除多晶硅(Poly-Si)层,并且重复性差,直接影响到随后的硅晶体缺陷的刻蚀成功与否。 However, these methods are not only time consuming, but also difficult to completely remove the polysilicon (Poly-Si) layer, and poor reproducibility, directly affects the success of the subsequent etching of the silicon crystal defects.

发明内容 SUMMARY

[0005]本发明的目的在于,提供一种检测娃晶体缺陷的方法,有效的对娃基片进彳丁材料层剥离处理,避免人工缺陷的假象,提高检测结果的准确性和可重复性。 Objective [0005] The present invention is to provide a method for detecting crystal defects baby, baby effective for the substrate material layer is peeled butoxy stimulation was treated to avoid artifacts artificial defect to improve the accuracy and repeatability of test results.

[0006]本发明提供的检测硅晶体缺陷的方法,用于去除晶圆上的材料层并对晶圆硅基片的硅晶体缺陷进行刻划和分析,所述材料层包括覆盖硅基片的多晶硅层及多晶硅层上的多种膜层,该方法包括: [0006] The present invention provides a method for detecting crystal defects of silicon, for removing the material layer on a silicon substrate wafer and a silicon wafer crystal defects and scoring analysis, the material layer comprises a silicon substrate covered a polysilicon layer and a plurality of film layers on the polysilicon layer, the method comprising:

[0007]切割所述晶圆以获得测试样品; [0007] the wafer is cut to obtain a test sample;

[0008]将所述测试样品浸入第一溶液去除所述多晶硅层之上的各层; [0008] The test sample was immersed in the first solution, removing the layers on the polysilicon layer;

[0009]将所述测试样品浸入第二溶液去除所述多晶硅层,使得硅基片全裸; [0009] The test sample was immersed in a solution of removing the second polysilicon layer, so that the naked silicon substrate;

[0010]将所述测试样品浸入第三溶液刻划硅晶体缺陷; [0010] The test sample was immersed in the third solution scribing silicon crystal defects;

[0011 ]用光学显微镜检查所述测试样品上的硅晶体缺陷,并拍摄光学显微镜照片。 [0011] Check the silicon crystal defects on the test sample with an optical microscope and an optical microscope photograph shooting.

[0012]可选的,对于所述的检测硅晶体缺陷的方法,所述第一溶液为氢氟酸,浓度为49%。 [0012] Alternatively, for the detection of defects in the silicon crystal according to the method, the first solution is a hydrofluoric acid concentration of 49%.

[0013]可选的,对于所述的检测硅晶体缺陷的方法,所述测试样品在第一溶液中浸泡时间为1min 〜15min。 [0013] Alternatively, for the detection of defects in the silicon crystal according to the method, the test sample was immersed in the first solution time 1min ~15min.

[0014]可选的,对于所述的检测硅晶体缺陷的方法,所述第二溶液为硝酸和缓冲氧化物蚀刻液体积比为8: 2的混合液,所述硝酸的浓度为69.5%,所述缓冲氧化物蚀刻液为体积比为NH4F: HF = 7:1的混合液。 [0014] Alternatively, for the detection of defects in the silicon crystal according to the method, the second solution is a buffered oxide etch solution of nitric acid and a volume ratio of 8: 2 mixture, the concentration of nitric acid is 69.5%, the buffered oxide etch solution volume ratio of NH4F: HF = 7: 1 mixture.

[0015]可选的,对于所述的检测硅晶体缺陷的方法,所述测试样品在第二溶液中浸泡时间为3s〜10s。 [0015] Alternatively, for the detection of defects in the silicon crystal according to the method, the test sample was immersed in the second solution time 3s~10s.

[0016]可选的,对于所述的检测硅晶体缺陷的方法,所述第三溶液的配方为: [0016] Alternatively, for the detection of defects in the silicon crystal according to the method, the formulation of the third solution:

[0017] 60毫升浓度为49%的氢氟酸; [0017] 60 ml of 49% hydrofluoric acid concentration;

[0018] 30毫升浓度为69.5%的硝酸; [0018] 30 ml of nitric acid at a concentration of 69.5%;

[0019] 30毫升浓度为5mol/L的三氧化铬溶液; [0019] 30 ml at a concentration of 5mol / L solution of chromium trioxide;

[0020] 2克含结晶水硝酸铜[Cu(NO3)2.3Η20]; [0020] 2 g of water-containing crystalline copper nitrate [Cu (NO3) 2.3Η20];

[0021] 60毫升浓度为99.7%的醋酸; [0021] 60 ml of acetic acid at a concentration of 99.7%;

[0022] 60毫升去离子水。 [0022] 60 ml of deionized water.

[0023]可选的,对于所述的检测硅晶体缺陷的方法,所述测试样品在第三溶液中浸泡时间为3min〜5min。 [0023] Alternatively, for the detection of defects in the silicon crystal according to the method, the test sample was immersed in the third solution time 3min~5min.

[0024]可选的,对于所述的检测硅晶体缺陷的方法,还包括:用扫描电子显微镜测量硅晶体缺陷的形状和大小,以判断硅晶体缺陷的导因。 [0024] Alternatively, for the detection method of the silicon crystal defect, further comprising: measuring the shape and size of silicon crystal defects with a scanning electron microscope, crystal defects in silicon is determined by a guide.

[0025]可选的,对于所述的检测硅晶体缺陷的方法,在浸入第一溶液、第二溶液及第三溶液完成后,皆利用去离子水清洗测试样品,然后用压缩空气枪吹干。 [0025] Alternatively, for the detection of defects in the silicon crystal according to the method, immersion in the first solution, the second solution and the third solution was completed, washing with deionized water all test samples, and then blown dry with compressed air gun .

[0026]可选的,对于所述的检测硅晶体缺陷的方法,所述测试样品为硅基片晶圆或切割后的娃基片晶圆。 [0026] Alternatively, for the detection of defects in the silicon crystal according to the method, the test sample is Wa of the wafer after the silicon substrate or wafer dicing.

[0027]与现有技术相比,本发明提供的检测硅晶体缺陷的方法中,利用多次溶液浸泡,去除了硅基片上的其他物质,特别是多晶硅。 [0027] Compared with the prior art method of detecting defects in the silicon crystal of the present invention provides the use of multiple solution immersion, in addition to other materials on a silicon substrate, in particular polycrystalline silicon. 相比现有技术,确保了硅基片的全裸以及硅晶体缺陷的有效刻划。 Compared to the prior art, it ensures an efficient and scoring naked silicon crystal defects in a silicon substrate. 本发明的方法操作简便,快速,效率高,并可以测量大面积范围内的硅晶体缺陷,而且测量结果准确和重复性好。 The method of the present invention is simple, fast, high efficiency, and the silicon crystal defects can be measured over a large area, and the result of measurement accuracy and repeatability. 此外,本发明的方法成本低,只有用透射电镜(TEM)来测量硅晶体缺陷方法的八分之一,大大的降低了资本的投入和样品失效分析的成本。 Further, the low cost method of the present invention, only by transmission electron microscopy (TEM) to measure the eighth method of silicon crystal defects, greatly reducing the cost of capital investment and failure analysis of samples.

附图说明 BRIEF DESCRIPTION

[0028]图1为本发明实施例检测硅晶体缺陷的方法的流程图。 [0028] FIG. 1 is a flowchart of the method for detecting crystal defects in a silicon embodiment of the present invention.

具体实施方式 detailed description

[0029]下面将结合示意图对本发明的检测硅晶体缺陷的方法进行更详细的描述,其中表示了本发明的优选实施例,应该理解本领域技术人员可以修改在此描述的本发明,而仍然实现本发明的有利效果。 [0029] below with reference to a schematic view of a method of detecting the silicon crystal defects of the present invention will be described in more detail, which shows a preferred embodiment of the present invention, it should be understood by those skilled in the art may modify the invention here described while still achieving advantageous effects of the present invention. 因此,下列描述应当被理解为对于本领域技术人员的广泛知道,而并不作为对本发明的限制。 Therefore, the following description should be understood as widely known to the skilled person, and not as a limitation on the present invention.

[0030]为了清楚,不描述实际实施例的全部特征。 [0030] For clarity, not all features of an actual embodiment are not described. 在下列描述中,不详细描述公知的功能和结构,因为它们会使本发明由于不必要的细节而混乱。 In the following description, well-known details are not described functions and structures, the present invention since they would be confusion unnecessary detail. 应当认为在任何实际实施例的开发中,必须做出大量实施细节以实现开发者的特定目标,例如按照有关系统或有关商业的限制,由一个实施例改变为另一个实施例。 Should be considered in the development of any actual embodiment, numerous implementation-details must be made to achieve the developers' specific goals, such as according to the relevant system or business-related constraints, changes of one embodiment of another embodiment of the embodiment. 另外,应当认为这种开发工作可能是复杂和耗费时间的,但是对于本领域技术人员来说仅仅是常规工作。 In addition, it should be considered that such a development effort might be complex and time-consuming, but for this skill in the art is just routine work.

[0031]在下列段落中参照附图以举例方式更具体地描述本发明。 [0031] In the present invention, by way of example with reference to the drawings more particularly described in the following paragraphs. 根据下面说明和权利要求书,本发明的优点和特征将更清楚。 The following description and the appended claims, features and advantages of the present invention will be apparent. 需说明的是,附图均采用非常简化的形式且均使用非精准的比例,仅用以方便、明晰地辅助说明本发明实施例的目的。 It should be noted that the drawings are used in a very simplified form and are using a non-precise proportion, only to facilitate, assist clarity purpose of illustrating an embodiment of the present invention.

[0032]通过研究,发明人发现在应用WRIGHT刻蚀液刻划硅晶体缺陷时,为了得到重复性好的刻划结果,关键步骤是要建立一套完整的样品前处理方法,特别是在用WRIGHT刻蚀液刻划硅晶体缺陷之前如何将硅基片上层的所有材料进行彻底地剥离,特别是多晶硅(Poly-Si),确保硅基片的全裸,从而避免由于晶圆基片上层材料剥离不干净而造成的人工缺陷假象,确保取得准确和重复性好的刻划结果。 [0032] Through the research, the inventors found that an etching solution in the application WRIGHT scribing silicon crystal defects, in order to obtain reproducible results scribed, the key step is to establish a complete set of samples before processing method, in particular with WRIGHT etching solution how all the upper silicon substrate material is thoroughly peeled before scribing silicon crystal defects, in particular of polysilicon (poly-Si), to ensure naked silicon substrate, thereby avoiding the release material, the upper layer of the substrate wafer not clean artificial defects caused by the illusion, make sure to obtain accurate and reproducible results are scored.

[0033]基于这一思想,本发明提供如下的检测硅晶体缺陷的方法,请参考图1,本方法包括: [0033] Based on this idea, the present invention provides a method for detecting crystal defects of silicon, please refer to FIG. 1, the method comprising:

[0034] 步骤S101:提供测试样品。 [0034] Step S101: providing a test sample. 所述测试样品可以为型号是〈100>、〈111>等的晶圆:包括一硅基片,所述硅基片上形成有多晶硅层,所述多晶硅层上覆盖有多种膜层。 The test sample may be a model is <100>, <111> wafer and the like: a silicon substrate including a silicon substrate is formed with a polysilicon layer covering film layer with a plurality of said polysilicon layer. 在本发明实施例中,所述测试样品可以是一整个硅基片晶圆,也可以是进行切割后的硅基片晶圆的某一部分。 In an embodiment of the present invention, the test sample can be a whole silicon wafer, or may be a part of a silicon wafer after cutting.

[0035]步骤S102:将所述测试样品浸入第一溶液去除所述多晶硅层之上的各层。 [0035] In the step S102: the test sample was immersed in a solution of removing said first polysilicon layer over the layers. 较佳的,本发明实施例中,所述第一溶液为氢氟酸(HF),浓度为49%。 Preferably, embodiments of the present invention, the first solution is a hydrofluoric acid (the HF), a concentration of 49%. 为了去除多晶硅层上的各层,所述测试样品在第一溶液中浸泡时间为1min〜15min,由于不同样品的膜层数量及种类不同,因此浸泡时间应随之灵活变动。 In order to remove the layers on the polysilicon layer, the test samples were soaked in a first solution 1min~15min time, since the number of different layers and different types of samples, thus flexibly change the soaking time should be followed.

[0036]利用本步骤的方法,能够很好的去除多晶硅层上的各层,从而为高质量的去除多晶硅层打下基础。 [0036] With the present method, the steps of removing the well layers on the polysilicon layer, thereby removing the basis for high-quality polysilicon layer. 为了获得更好的效果,测试样品浸泡在第一溶液中时,需要被完全浸没,并且保持一定的移动,使得溶液与测试样品有着充分的接触和化学反应,以提高剥层效率。 In order to obtain better results, the test samples were soaked in a first solution, needs to be completely immersed, and remains constant movement, so that the solution with the test sample has sufficient contact and chemical reaction, in order to improve the efficiency of delamination.

[0037]在本步骤完成后,要马上用去离子水(DI water)清洗测试样品,然后及时用压缩空气枪吹干。 [0037] After this step is completed, to once with deionized water (DI water) washing the test sample, and then blown dry with compressed air gun in a timely manner.

[0038]步骤S103:在第一溶液中浸泡结束后,将所述测试样品浸入第二溶液去除所述多晶硅层,使得硅基片全裸。 [0038] Step S103: After the end of the immersion in the first solution, the test sample was immersed in a solution of removing the second polysilicon layer, so that the silicon substrate naked. 较佳的,所述第二溶液为HB82,具体是硝酸(HNO3)和缓冲氧化物蚀刻液(BOE)体积比为8: 2的混合液,所述硝酸的浓度为69.5%,所述BOE为体积比为NH4F:HF = 7:1的混合液。 Preferably, the second solution is HB82, in particular nitric acid (of HNO3) solution and a buffered oxide etch (BOE) volume ratio of 8: 2 mixture, the concentration of nitric acid is 69.5%, of the BOE volume ratio of NH4F: HF = 7: 1 mixture. 多晶硅层的剥离时间为3s〜10s,以5s〜8s为佳,即所述测试样品在第二溶液中浸泡时间为3 s〜1 s,优选为5 s〜8 s,同样的,也应当视多晶硅层的厚度而对浸泡时间进行微调,以彻底清除多晶硅,确保硅片的全裸。 Release time polysilicon layer 3s~10s, preferably to 5s~8s, i.e., the test sample was immersed in the second solution time is 3 s~1 s, preferably 5 s~8 s, the same should also be depending on the the thickness of the polysilicon layer and fine tune the immersion time, to completely remove the polysilicon ensure naked silicon.

[0039]同样的,测试样品浸泡在第二溶液中时,需要被完全浸没,并且保持一定的移动,使得溶液与测试样品有着充分的接触和化学反应,以提高剥层效率。 [0039] Similarly, when the test samples were soaked in a second solution, it needs to be completely immersed, and remains constant movement, so that the solution with the test sample has sufficient contact and chemical reaction, in order to improve the efficiency of delamination.

[0040]在本步骤完成后,要马上用去离子水(DI water)清洗测试样品,然后及时用压缩空气枪吹干。 [0040] After this step is completed, to once with deionized water (DI water) washing the test sample, and then blown dry with compressed air gun in a timely manner.

[0041]本步骤所用第二溶液为本发明的一个关键点,利用本步骤中配置的第二溶液,能够将多晶硅层进行完美的剥离,确保硅基片全裸。 [0041] A key point of the present invention, the second solution used in this step, this step using a solution of a second configuration, the polysilicon layer can be perfectly peeled off, to ensure that the silicon substrate naked. 相比现有技术中的去除过程,便捷可靠,并且有着良好的可重复性。 Removal process compared with the prior art, reliable and convenient, and has good repeatability.

[0042]步骤S104:将所述测试样品浸入第三溶液刻划硅晶体缺陷。 [0042] Step S104: The test sample was immersed in the third solution scribing silicon crystal defects. 在本实施例中,所述第三溶液的配方为: In the present embodiment, the formulation of the third solution:

[0043] 60毫升浓度为49%的氢氟酸; [0043] 60 ml of 49% hydrofluoric acid concentration;

[0044] 30毫升浓度为69.5%的硝酸; [0044] 30 ml of nitric acid at a concentration of 69.5%;

[0045] 30毫升浓度为5mol/L的三氧化铬溶液,即2ml溶液中含有I克CrO3; [0045] 30 ml at a concentration of 5mol / L solution of chromium trioxide, i.e. 2ml solution containing I g of CrO3;

[0046] 2克含结晶水硝酸铜[Cu(NO3)2.3Η20]; [0046] 2 g of water-containing crystalline copper nitrate [Cu (NO3) 2.3Η20];

[0047] 60毫升浓度为99.7%的醋酸; [0047] 60 ml of acetic acid at a concentration of 99.7%;

[0048] 60晕升去尚子水(DI water)。 [0048] 60 L of de Halo Naoko water (DI water).

[0049]所述测试样品浸泡在第三溶液中的时间为3min〜5min,以完成刻划硅晶体缺陷。 [0049] The test sample was immersed in the third solution time 3min~5min, to complete scribing silicon crystal defects.

[0050]同样的,测试样品浸泡在第三溶液中时,需要被完全浸没,并且保持一定的移动,使得溶液与测试样品有着充分的接触和化学反应。 [0050] Similarly, when the test sample was immersed in a third solution, it needs to be completely immersed, and remains constant movement, so that the solution with the test sample has sufficient contact and chemical reactions. 在本步骤完成后,要马上用去离子水(DIwater)清洗测试样品,然后及时用压缩空气枪吹干。 After this step is completed, to once with deionized water (DIwater) washing the test sample, and then blown dry with compressed air gun in a timely manner.

[0051]在上述几个步骤中,浸泡过程皆是需要一次完成,即不可进行例如将测试样品从第三溶液中浸泡一会后拿出观察,然后再浸泡在第三溶液中,以避免人工缺陷假象的引入。 [0051] In the above steps, the soaking process is required all at once, i.e., for example, not after the test samples were soaked in a solution will come from the third observation, and then immersed in a third solution, in order to avoid artificial defects introduced artifacts.

[0052]步骤S105:用光学显微镜检查所述测试样品上的硅晶体缺陷,并拍摄光学显微镜照片。 [0052] Step S105: silicon crystal defects in the optical microscope examination of the test sample, and shooting optical micrograph. 进一步的,还可以再用扫描电子显微镜测量硅晶体缺陷的形状和大小,以判断硅晶体缺陷的导因。 Further, also possible to measure the shape and size of silicon crystal defects and then a scanning electron microscope, to determine the silicon crystal defects due to conduction. 例如,“花”状结构硅晶体缺陷的导因可能是由于受到沾污加高温处理。 For example, the guide "flower" like structure of the silicon crystal defects due to contamination may be due to increase the high temperature treatment.

[0053]由本发明的上述方法,可以引申出:若仅针对硅基片,可直接进行本发明的步骤S104,用第三溶液刻划娃晶体缺陷。 [0053] by the method of the present invention, it can be extended out: S104, scoring with a third solution if the baby only for crystal defects of the silicon substrate, the step of the present invention can be performed directly. 之后利用光学显微镜和扫描电子显微镜测量和分析娃晶体缺陷。 After use of optical microscopy and scanning electron microscopy and analysis of crystal defects baby.

[0054] 针对未完工硅晶圆,如果没有多晶硅(Poly-Si)层,则可跳过步骤S103。 [0054] For unfinished silicon wafer, without the polysilicon (Poly-Si) layer, you can skip step S103.

[0055]显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。 [0055] Obviously, those skilled in the art can make various modifications and variations to the invention without departing from the spirit and scope of the invention. 这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。 Thus, if these modifications and variations of the present invention fall within the claims of the invention and the scope of equivalents thereof, the present invention intends to include these modifications and variations.

Claims (7)

  1. 1.一种检测硅晶体缺陷的方法,用于去除晶圆上的材料层并对晶圆硅基片的硅晶体缺陷进行刻划和分析,所述材料层包括覆盖硅基片的多晶硅层及多晶硅层上的多种膜层,该方法包括: 提供测试样品; 将所述测试样品浸入第一溶液去除所述多晶硅层之上的各层; 将所述测试样品浸入第二溶液去除所述多晶硅层,使得硅基片全裸;所述第二溶液为硝酸和缓冲氧化物蚀刻液体积比为8:2的混合液,所述硝酸的浓度为69.5%,所述缓冲氧化物蚀刻液为体积比SNH4F: HF = 7:1的混合液,所述测试样品在第二溶液中浸泡时间为3s〜10s; 将所述测试样品浸入第三溶液刻划硅晶体缺陷; 用光学显微镜检查所述测试样品上的硅晶体缺陷,并拍摄光学显微镜照片。 A method of detecting defects in a silicon crystal, for removing the material layer and the silicon wafer crystal defects on a silicon substrate wafer and scoring analysis, the material layer comprises a polysilicon layer covering the silicon substrate and multiple film layers on the polysilicon layer, the method comprising: providing a test sample; the test sample is immersed in a solution of removing said first polysilicon layer over the layers; the test sample is immersed in a solution of removing the second polysilicon layer, so that the naked silicon substrate; the second solution is a buffered oxide etch solution of nitric acid and a volume ratio of 8: 2 mixture of the nitric acid concentration of 69.5%, a buffered oxide etch solution volume ratio SNH4F: HF = 7: 1 mixture of the test sample 3s~10s soak time in the second solution; the test sample is immersed in the third solution scribing silicon crystal defects; examining the test sample with an optical microscope defects on silicon crystal, and an optical microscopic photograph shooting.
  2. 2.如权利要求1所述的检测硅晶体缺陷的方法,其特征在于,所述第一溶液为氢氟酸,浓度为49 %。 2. The method for detecting crystal defects of the silicon claimed in claim 1, wherein said first solution is a hydrofluoric acid concentration of 49%.
  3. 3.如权利要求2所述的检测硅晶体缺陷的方法,其特征在于,所述测试样品在第一溶液中浸泡时间为1min〜15min。 The method of detecting defects in the silicon crystal as claimed in claim 2, wherein said test sample is immersed in the first solution time 1min~15min.
  4. 4.如权利要求1所述的检测硅晶体缺陷的方法,其特征在于,所述第三溶液的配方为: 60毫升浓度为49 %的氢氟酸; 30毫升浓度为69.5 %的硝酸; 30毫升浓度为5mol/L的三氧化铬溶液; 2克含结晶水硝酸铜Cu(NO3)2.3H20; 60晕升浓度为99.7 %的醋酸; 60晕升去尚子水。 4. The method for detecting crystal defects of the silicon claimed in claim 1, wherein the third solution formulation is: 60 ml of 49% hydrofluoric acid; 69.5 ml of 30% nitric acid; 30 ml of a 5mol / L solution of chromium trioxide; crystal water containing 2 g of copper nitrate Cu (NO3) 2.3H20; 60 liters halo acetic acid concentration of 99.7%; Naoko to 60 liters of water halo.
  5. 5.如权利要求4所述的检测硅晶体缺陷的方法,其特征在于,所述测试样品在第三溶液中浸泡时间为3min〜5min。 5. The method for detecting crystal defects of silicon as claimed in claim 4, characterized in that the test sample was immersed in the third solution time 3min~5min.
  6. 6.如权利要求1所述的检测硅晶体缺陷的方法,其特征在于,还包括:用扫描电子显微镜测量硅晶体缺陷的形状和大小,以判断硅晶体缺陷的导因。 6. The method for detecting crystal defects of the silicon claimed in claim 1, characterized in that, further comprising: measuring the shape and size of silicon crystal defects with a scanning electron microscope, to determine the silicon crystal defects due to conduction.
  7. 7.如权利要求1所述的检测硅晶体缺陷的方法,其特征在于,在浸入第一溶液、第二溶液及第三溶液完成后,皆利用去离子水清洗测试样品,然后用压缩空气枪吹干。 7. The method for detecting crystal defects of the silicon claimed in claim 1, characterized in that the immersion in the first solution, the second solution and the third solution was completed, washing with deionized water all test samples, and then with compressed air gun dry.
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