CN104152973A - Method for manufacturing diamond cutting wire - Google Patents
Method for manufacturing diamond cutting wire Download PDFInfo
- Publication number
- CN104152973A CN104152973A CN201410372999.2A CN201410372999A CN104152973A CN 104152973 A CN104152973 A CN 104152973A CN 201410372999 A CN201410372999 A CN 201410372999A CN 104152973 A CN104152973 A CN 104152973A
- Authority
- CN
- China
- Prior art keywords
- diadust
- plating
- solution
- nickel
- diamond cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemically Coating (AREA)
Abstract
The invention relates to a method for manufacturing a diamond cutting wire. The method comprises the following steps: treating the surface of diamond micropowder; carrying out chemical nickel-tungsten-phosphorus alloy plating on the surface of the diamond micropowder; carrying out passivating treatment on a chemical nickel-tungsten-phosphorus alloy plating layer on the surface of the diamond micropowder; carrying out plating manufacture on the diamond cutting wire. According to the method, the diamond micropowder is subjected to the chemical nickel-tungsten-phosphorus alloy plating and then subjected to the passivating treatment, and a layer of passive film is formed on the chemical nickel-tungsten-phosphorus alloy plating layer on the surface of the diamond micropowder, so that the corrosion resistance and rigidity of the diamond micropowder are enhanced; the chemical nickel-tungsten-phosphorus alloy plating layer can be used for enhancing the abrasion resistance of the diamond micropowder and ensuring that an alloy layer on the surface of the diamond micropowder is difficult to abrade in the circulating process of a plating solution, so that the continuous and stable production of the diamond cutting wire can be realized, and the production length of the diamond cutting wire is increased.
Description
Technical field
The invention belongs to electroplating technology field, be specifically related to a kind of manufacture method of diamond cutting secant.
Background technology
In the course of processing of the hard and fragile material such as silicon crystal, jewel and pottery, cutting processing is critical process, because the fragility of hard and fragile material is large, hardness is high, easily causes the damage of material in cutting action process, reduces yield rate.
Electroplated diamond line of cut is a kind of conventional hard and fragile material parting tool, electroplated diamond line of cut is taking plated metal as bonding agent, taking diamond as abrasive material, by the galvanic deposit effect of plated metal, diamond particles is cemented on metal wire matrix and a kind of parting tool of making.The outstanding advantages of electroplated diamond line of cut is that metal plating is high to the hold of abrasive particle, and thermotolerance and the wear resistance of coating are high, and the line of cut life-span is long.The manufacturing processed of electroplated diamond line of cut is generally Pre-treatment before plating, upper sand, thickening and aftertreatment.Upper sand is the critical process of electroplated diamond line of cut manufacturing processed, the upper sand method adopting is at present by stirring, diadust to be suspended in electroplate liquid, metal wire is operation continuously in electroplate liquid, and the diamond contacting with metal wire sticks to metal wire surface with sand process on completing under the effect of galvanic deposit.The method that this kind manufactured electroplated diamond line of cut has the following disadvantages: the common surface chemical plating one deck of diadust nickel-phosphorus alloy that (1) adopts, the nickel-phosphorus alloy surface corrosion-resistant erosion property that the method obtains is not high enough, in electroplate liquid, long-time immersion can cause corrosion, affects the homogeneity of diamond cutting secant quantity-produced stability and diamond cutting line mass; (2) wear resistance of the chemical plating nickel-phosphorus alloy of diamond surface is inadequate, circulate owing to needing to realize electroplate liquid with pump in electroplated diamond line of cut production process, the nickel-phosphorus alloy that easily causes diadust surface in the working cycle of electroplate liquid weares and teares, comes off, and makes electroplated diamond line of cut can not realize long-term continuous and stable production.
Therefore, develop a kind of manufacture method of new diamond cutting secant, the erosion resistance of diadust and wear resistance are improved, and then the continuous and stable production that realizes diamond cutting secant is the emphasis that those skilled in the art study.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of diamond cutting secant, by improving erosion resistance and the wear resistance of diadust, and then realize the continuous and stable production of diamond cutting secant, improve the production length of diamond cutting secant.
For this reason, the invention provides a kind of manufacture method of diamond cutting secant, comprise diadust chemical nickel plating on surface tungsten phosphorus alloy, the diadust of electroless Ni-W-P alloy plating is placed in to passivating solution and carries out Passivation Treatment.Electroless Ni-W-P alloy plating layer on diadust surface forms one deck passive film, can improve erosion resistance and the hardness of diadust surface chemical plating nickel tungsten layer, extends its work-ing life, and then realizes the continuous and stable production of diamond cutting secant.
According to the present invention, passivating solution contains 8-10g/L sodium hydroxide, 3-5g/L water glass and 10-30g/L hydrogen peroxide, and passivation temperature is 30-50 DEG C, and the Passivation Treatment time is 30-60min.
According to the present invention, the manufacture method of diamond cutting secant comprises the following steps:
(1) diadust surface treatment: the diadust that is 5-50 μ m by particle diameter is placed in basic solution and soaks 0.5-2h, clean extremely neutral with distilled water, then diadust is placed in to acidic solution and soaks 12-24h, then clean extremely neutral with distilled water;
(2) diadust chemical nickel plating on surface tungsten phosphorus alloy: the diadust that step (1) is obtained carries out sensitization, activation treatment, then be placed in nickel-tungsten-phosphorus bath for chemical plating, at diadust surface chemistry plating one deck ni-w-p alloy, make the diadust 20%-50% that increases weight after electroless Ni-W-P alloy plating;
(3) Passivation Treatment of diadust chemical nickel plating on surface tungsten phosphorus alloy layer: the diadust that step (2) is obtained is placed in passivating solution, forms one deck passive film on the electroless Ni-W-P alloy plating layer surface on diadust surface;
(4) the plating manufacture of diamond cutting secant: the diadust that step (3) is obtained is suspended in electronickelling solution, electronickelling GOLD FROM PLATING SOLUTION hard rock micro mist concentration is 5-50g/L, current density is 2-30A/dm
2, to electroplate as negative electrode taking the metal wire of diameter 0.08-0.5mm, metal wire moves in electronickelling solution with the speed of 5-20m/min, and making nickel layer thickness is the 40%-60% of diadust particle diameter.
According to the present invention, in step (1), the particle diameter of diadust is 5-50 μ m, the particle diameter difference of the diadust that the metal wire of different diameter uses, and the diameter of metal wire is less, and the diadust particle diameter of use is less.The diadust particle diameter that the metal wire that in the present invention, diameter is 0.08-0.1mm uses is 5-10 μ m, diameter is that the diadust particle diameter that the metal wire of 0.1-0.18mm uses is 10-20 μ m, diameter is that the diadust particle diameter that the metal wire of 0.18-0.25mm uses is 20-40 μ m, and the diadust particle diameter that the metal wire that diameter is 0.25-0.5mm uses is 40-50 μ m.
According to the present invention, step (1) neutral and alkali solution is sodium hydroxide solution, and mass percentage concentration is 5%-20%, and basic solution can be removed the oil on diadust surface.
According to the present invention, in step (1), acidic solution is salpeter solution, and mass percentage concentration is more than 30%, and acidic solution can be removed the solid impurity on diadust surface.
According to the present invention, sensitization in step (2), activation treatment process adopt sensitization, the activating treatment process of this area routine, sensitizing solution contains 10-20g/L tin chloride and 10-20ml/L hydrochloric acid, sensitization treating processes is: diadust is put into sensitizing solution and stir 3-5min, then clean with distilled water.Activation solution contains 0.3-0.5g/L Palladous chloride and 10-20ml/L hydrochloric acid, and activation treatment process is: the diadust that sensitization was processed is put into activation solution and stirred 3-5min, then cleans with distilled water.
According to the present invention, in step (2), nickel-tungsten-phosphorus bath for chemical plating contains 20-35g/L single nickel salt, 20-30g/L inferior sodium phosphate, 10-30g/L sodium wolframate, 20-30g/L Trisodium Citrate, 30-40g/L ammonium sulfate, 60-80mg/L sodium lauryl sulphate and 1-2mg/L Potassium Iodate, the pH value of nickel-tungsten-phosphorus bath for chemical plating is 7-9, and temperature is 90-95 DEG C.Compared with nickel-phosphorus alloy, the wear resistance of ni-w-p alloy is higher, in electronickelling solution, can keep the stability of longer time, under the effect of electroplate liquid recycle pump, nickel tungsten phosphorus alloy-layer is difficult for because collision, friction damage in electronickelling solution, therefore adopts the continuous and stable production that diadust chemical nickel plating on surface tungsten phosphorus alloy can security deposit's hard rock line of cut.
According to the present invention, in step (2), in ni-w-p alloy, W content is 3%-7%, and phosphorus content is 5%-10%.
According to the present invention, in step (4), electronickelling solution is single nickel salt nickel plating solution or nickel sulfamic acid nickel plating solution.
According to the present invention, in step (4), metal wire is copper facing high-carbon steel wire or wireline, and the tensile strength of high-carbon steel wire and wireline is high, is difficult for getting rusty after copper facing, is the common metal line matrix of manufacturing electroplated diamond line of cut.
Diadust chemical nickel plating on surface tungsten phosphorus alloy of the present invention carries out Passivation Treatment, electroless Ni-W-P alloy plating layer on diadust surface forms one deck passive film, can improve erosion resistance and the hardness of diadust surface chemical plating nickel tungsten layer, extend its work-ing life, continuous and stable production that can security deposit's hard rock line of cut.In addition, compared with nickel-phosphorus alloy, the wear resistance of ni-w-p alloy is higher, the electroless plating nickel plating tungstenalloy layer that can ensure diadust surface is difficult for being worn in electroplate liquid working cycle, improve the work-ing life of diadust in plating solution, thereby can realize the production of diamond cutting secant continous-stable.Preparation method provided by the invention improves erosion resistance, hardness and the wear resistance of diadust, and then can realize the continuous and stable production of diamond cutting secant, improves the production length of diamond cutting secant.
Embodiment
Below the specific embodiment of the present invention is elaborated.Should be understood that, embodiment described herein only, for description and interpretation the present invention, is not limited to the present invention.
Embodiment 1
(1) diadust surface treatment: be that to put into mass percentage concentration be that 10% sodium hydroxide solution soaks 2h oil removing to 10 μ m diadusts by granularity, clean extremely neutral with distilled water, again diadust is put into mass percentage concentration and be 30% salpeter solution and soak 24h, remove surperficial solid impurity, then clean extremely neutral with distilled water.(2) diadust chemical nickel plating on surface tungsten phosphorus alloy: the diadust that step (1) is obtained carries out sensitization, activation treatment is placed in nickel-tungsten-phosphorus bath for chemical plating, at diadust surface chemistry plating one deck ni-w-p alloy, diadust increases weight 45% after chemical plating ni-w-p alloy, wherein W content 7%, phosphorus content 7%; Nickel-tungsten-phosphorus bath for chemical plating contains 25g/L single nickel salt, 20g/L inferior sodium phosphate, 25g/L sodium wolframate, 20g/L Trisodium Citrate, 30g/L ammonium sulfate, 60mg/L sodium lauryl sulphate and 1mg/L Potassium Iodate, the pH value of nickel-tungsten-phosphorus bath for chemical plating is 7, and temperature is 92 DEG C.(3) Passivation Treatment of diadust chemical nickel plating on surface tungsten phosphorus alloy layer: the diadust that step (2) is obtained is placed in passivating solution, forms one deck passive film on the nickel tungsten phosphorus alloy-layer surface on diadust surface; Passivating solution contains 10g/L sodium hydroxide, 5g/L water glass and 30g/L hydrogen peroxide, and passivation temperature is 50 DEG C, and the Passivation Treatment time is 60min.(4) the plating manufacture of diamond cutting secant: taking nickel sulfamic acid nickel plating solution as electroplate liquid, the diadust that step (3) is obtained by stirring is suspended in electronickelling solution, electronickelling GOLD FROM PLATING SOLUTION hard rock micro mist concentration is 5g/L, electroplate manufacture taking the copper facing high-carbon steel wire of diameter 0.1mm as negative electrode, metal wire moves in electronickelling solution with the speed of 20m/min, and current density is 5A/dm
2, make nickel layer thickness be increased to 45% of diadust particle diameter, can complete the manufacture of electroplated diamond line of cut, the production length of diamond cutting secant is 70 kms.
Embodiment 2
(1) diadust surface treatment: be that to put into mass percentage concentration be that 10% sodium hydroxide solution soaks 50min oil removing to 35 μ m diadusts by granularity, clean extremely neutral with distilled water, diadust being put into mass percentage concentration again and be 40% salpeter solution soaks 20 hours, remove surperficial solid impurity, then clean extremely neutral with distilled water.(2) diadust chemical nickel plating on surface tungsten phosphorus alloy: the diadust that step (1) is obtained carries out sensitization, activation treatment is placed in nickel-tungsten-phosphorus bath for chemical plating, at diadust surface chemistry plating one deck ni-w-p alloy, diadust increases weight 30% after chemical plating ni-w-p alloy, wherein W content 5%, phosphorus content 8%; Nickel-tungsten-phosphorus bath for chemical plating contains 30g/L single nickel salt, 25g/L inferior sodium phosphate, 20g/L sodium wolframate, 30g/L Trisodium Citrate, 30g/L ammonium sulfate, 70mg/L sodium lauryl sulphate and 2mg/L Potassium Iodate, the pH value of nickel-tungsten-phosphorus bath for chemical plating is 8, and temperature is 92 DEG C.(3) Passivation Treatment of diadust chemical nickel plating on surface tungsten phosphorus alloy layer: the diadust that step (2) is obtained is placed in passivating solution, forms one deck passive film on the nickel tungsten phosphorus alloy-layer surface on diadust surface; Passivating solution contains 9g/L sodium hydroxide, 4g/L water glass and 20g/L hydrogen peroxide, and passivation temperature is 40 DEG C, and the Passivation Treatment time is 50min.(4) the plating manufacture of diamond cutting secant: taking nickel sulfamic acid nickel plating solution as electroplate liquid, the diadust that step (3) is obtained by stirring is suspended in electronickelling solution, electronickelling GOLD FROM PLATING SOLUTION hard rock micro mist concentration is 25g/L, electroplate manufacture taking the copper facing high-carbon steel wire of diameter 0.25mm as negative electrode, metal wire moves in electronickelling solution with the speed of 10m/min, and current density is 25A/dm
2, make nickel layer thickness be increased to 50% of diadust particle diameter, can complete the manufacture of electroplated diamond line of cut, the production length of diamond cutting secant is 50 kms.
Embodiment 3
(1) diadust surface treatment: it is that 10% sodium hydroxide solution soaks 30min oil removing that granularity 45 μ m diadusts are put into mass percentage concentration, clean extremely neutral with distilled water, diadust being put into mass percentage concentration again and be 40% salpeter solution soaks 15 hours, remove surperficial solid impurity, then clean extremely neutral with distilled water; (2) diadust chemical nickel plating on surface tungsten phosphorus alloy: the diadust that step (1) is obtained carries out sensitization, activation treatment is placed in nickel-tungsten-phosphorus bath for chemical plating, at diadust surface chemistry plating one deck ni-w-p alloy, diadust increases weight 25% after chemical plating ni-w-p alloy, wherein W content 3%, phosphorus content 8%; Nickel-tungsten-phosphorus bath for chemical plating contains 30g/L single nickel salt, 25g/L inferior sodium phosphate, 15g/L sodium wolframate, 25g/L Trisodium Citrate, 30g/L ammonium sulfate, 70mg/L sodium lauryl sulphate and 1mg/L Potassium Iodate, the pH value of nickel-tungsten-phosphorus bath for chemical plating is 9, and temperature is 92 DEG C.(3) Passivation Treatment of diadust chemical nickel plating on surface tungsten phosphorus alloy layer: the diadust that step (2) is obtained is placed in passivating solution, forms one deck passive film on the nickel tungsten phosphorus alloy-layer surface on diadust surface; Passivating solution contains 8g/L sodium hydroxide, 3g/L water glass and 10g/L hydrogen peroxide, and passivation temperature is 40 DEG C, and the Passivation Treatment time is 30min.(4) the plating manufacture of diamond cutting secant: taking single nickel salt nickel plating solution as electroplate liquid, the diadust that step (3) is obtained by stirring is suspended in electronickelling solution, electronickelling GOLD FROM PLATING SOLUTION hard rock micro mist concentration is 45g/L, electroplate manufacture taking the wireline of diameter 0.5mm as negative electrode, metal wire moves in electronickelling solution with the speed of 8m/min, and current density is 10A/dm
2, make nickel layer thickness be increased to 50% of diadust particle diameter, can complete the manufacture of electroplated diamond line of cut, the production length of diamond cutting secant is 40 kms.
Comparative example 1
Substantially with embodiment 1, different is there is no step (3), and diadust surface nickel tungsten phosphorus alloy-layer does not carry out Passivation Treatment, and the production length of diamond cutting secant is 40 kms.
Comparative example 2
Substantially with embodiment 2, different is there is no step (3), and diadust surface nickel tungsten phosphorus alloy-layer does not carry out Passivation Treatment, and the production length of diamond cutting secant is 30 kms.
Comparative example 3
Substantially with embodiment 3, different is there is no step (3), and diadust surface nickel tungsten phosphorus alloy-layer does not carry out Passivation Treatment, and the production length of diamond cutting secant is 20 kms.
Claims (9)
1. a manufacture method for diamond cutting secant, comprises diadust chemical nickel plating on surface tungsten phosphorus alloy, it is characterized in that, also comprises that the diadust of electroless Ni-W-P alloy plating is placed in to passivating solution carries out Passivation Treatment.
2. the manufacture method of diamond cutting secant as claimed in claim 1, is characterized in that, described passivating solution contains 8-10g/L sodium hydroxide, 3-5g/L water glass and 10-30g/L hydrogen peroxide, and passivation temperature is 30-50 DEG C, and the Passivation Treatment time is 30-60min.
3. the manufacture method of diamond cutting secant as claimed in claim 1 or 2, is characterized in that, said method comprising the steps of:
(1) diadust surface treatment: the diadust that is 5-50 μ m by particle diameter is placed in basic solution and soaks 0.5-2h, clean extremely neutral with distilled water, then diadust is placed in to acidic solution and soaks 12-24h, then clean extremely neutral with distilled water;
(2) diadust chemical nickel plating on surface tungsten phosphorus alloy: the diadust that step (1) is obtained carries out sensitization, activation treatment, then be placed in nickel-tungsten-phosphorus bath for chemical plating, at diadust surface chemistry plating one deck ni-w-p alloy, make the diadust 20%-50% that increases weight after electroless Ni-W-P alloy plating;
(3) Passivation Treatment of diadust chemical nickel plating on surface tungsten phosphorus alloy layer: the diadust that step (2) is obtained is placed in passivating solution, forms one deck passive film on the electroless Ni-W-P alloy plating layer surface on diadust surface;
(4) the plating manufacture of diamond cutting secant: the diadust that step (3) is obtained is suspended in electronickelling solution, electronickelling GOLD FROM PLATING SOLUTION hard rock micro mist concentration is 5-50g/L, current density is 2-30A/dm
2, to electroplate as negative electrode taking the metal wire of diameter 0.08-0.5mm, metal wire moves in electronickelling solution with the speed of 5-20m/min, and making nickel layer thickness is the 40%-60% of diadust particle diameter.
4. the manufacture method of diamond cutting secant as claimed in claim 3, is characterized in that, described step (1) neutral and alkali solution is sodium hydroxide solution, and mass percentage concentration is 5%-20%.
5. the manufacture method of diamond cutting secant as claimed in claim 3, is characterized in that, in described step (1), acidic solution is salpeter solution, and mass percentage concentration is more than 30%.
6. the manufacture method of diamond cutting secant as claimed in claim 3, it is characterized in that, in described step (2), nickel-tungsten-phosphorus bath for chemical plating contains 20-35g/L single nickel salt, 20-30g/L inferior sodium phosphate, 10-30g/L sodium wolframate, 20-30g/L Trisodium Citrate, 30-40g/L ammonium sulfate, 60-80mg/L sodium lauryl sulphate and 1-2mg/L Potassium Iodate, the pH value of nickel-tungsten-phosphorus bath for chemical plating is 7-9, and temperature is 90-95 DEG C.
7. the manufacture method of diamond cutting secant as claimed in claim 3, is characterized in that, in described step (2), in ni-w-p alloy, W content is 3%-7%, and phosphorus content is 5%-10%.
8. the manufacture method of diamond cutting secant as claimed in claim 3, is characterized in that, in described step (4), electronickelling solution is single nickel salt nickel plating solution or nickel sulfamic acid nickel plating solution.
9. the manufacture method of diamond cutting secant as claimed in claim 3, is characterized in that, in described step (4), metal wire is copper facing high-carbon steel wire or wireline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410372999.2A CN104152973A (en) | 2014-07-26 | 2014-07-26 | Method for manufacturing diamond cutting wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410372999.2A CN104152973A (en) | 2014-07-26 | 2014-07-26 | Method for manufacturing diamond cutting wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104152973A true CN104152973A (en) | 2014-11-19 |
Family
ID=51878591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410372999.2A Pending CN104152973A (en) | 2014-07-26 | 2014-07-26 | Method for manufacturing diamond cutting wire |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104152973A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154958A (en) * | 2015-09-22 | 2015-12-16 | 郑州磨料磨具磨削研究所有限公司 | Method for preparing electroplated diamond grinding wheel with orderly arranged abrasive materials |
| CN105887170A (en) * | 2016-05-19 | 2016-08-24 | 青岛科技大学 | Manufacturing method of electroplated diamond cutting wire |
| CN106947961A (en) * | 2017-03-23 | 2017-07-14 | 南京三超新材料股份有限公司 | The processing method of nickel plating diamond surface electrocorrosion-resisting |
| CN107299378A (en) * | 2017-05-26 | 2017-10-27 | 杨凌美畅新材料有限公司 | A kind of manufacture method of high efficiency cutting silicon chip diamond wire |
| CN107699938A (en) * | 2017-10-18 | 2018-02-16 | 上海都为电子有限公司 | A kind of preparation technology of diamond cutting secant |
| CN108687981A (en) * | 2017-03-30 | 2018-10-23 | 松下知识产权经营株式会社 | Sawline and disconnecting device |
| CN110079801A (en) * | 2019-06-04 | 2019-08-02 | 泉州华大超硬工具科技有限公司 | A kind of functionalization diamond of coating surface complex metal layer |
| CN110871505A (en) * | 2018-08-30 | 2020-03-10 | 洛阳阿特斯光伏科技有限公司 | Compound cutting method for crystal silicon rod |
| CN111101182A (en) * | 2020-03-23 | 2020-05-05 | 江苏聚成金刚石科技有限公司 | Method for improving sanding uniformity of plated diamond in online saw production process |
| CN112192459A (en) * | 2020-09-30 | 2021-01-08 | 苏州韦度新材料科技有限公司 | Preparation process of diamond wire saw suitable for cutting large-size semiconductor |
-
2014
- 2014-07-26 CN CN201410372999.2A patent/CN104152973A/en active Pending
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154958B (en) * | 2015-09-22 | 2017-08-04 | 郑州磨料磨具磨削研究所有限公司 | A kind of preparation method of the plated diamond grinding wheel of grinding material sequential arrangement |
| CN105154958A (en) * | 2015-09-22 | 2015-12-16 | 郑州磨料磨具磨削研究所有限公司 | Method for preparing electroplated diamond grinding wheel with orderly arranged abrasive materials |
| CN105887170A (en) * | 2016-05-19 | 2016-08-24 | 青岛科技大学 | Manufacturing method of electroplated diamond cutting wire |
| CN105887170B (en) * | 2016-05-19 | 2018-04-27 | 青岛科技大学 | A kind of manufacture method of electroplated diamond line of cut |
| CN106947961B (en) * | 2017-03-23 | 2019-02-22 | 南京三超新材料股份有限公司 | The processing method of nickel plating diamond surface electrocorrosion-resisting |
| CN106947961A (en) * | 2017-03-23 | 2017-07-14 | 南京三超新材料股份有限公司 | The processing method of nickel plating diamond surface electrocorrosion-resisting |
| CN108687981B (en) * | 2017-03-30 | 2021-04-23 | 松下知识产权经营株式会社 | Wire sawing and cutting device |
| CN108687981A (en) * | 2017-03-30 | 2018-10-23 | 松下知识产权经营株式会社 | Sawline and disconnecting device |
| CN107299378A (en) * | 2017-05-26 | 2017-10-27 | 杨凌美畅新材料有限公司 | A kind of manufacture method of high efficiency cutting silicon chip diamond wire |
| CN107299378B (en) * | 2017-05-26 | 2019-04-05 | 杨凌美畅新材料股份有限公司 | A kind of manufacturing method of high efficiency cutting silicon wafer diamond wire |
| CN107699938B (en) * | 2017-10-18 | 2019-12-20 | 上海都为电子有限公司 | Preparation process of diamond cutting line |
| CN107699938A (en) * | 2017-10-18 | 2018-02-16 | 上海都为电子有限公司 | A kind of preparation technology of diamond cutting secant |
| CN110871505A (en) * | 2018-08-30 | 2020-03-10 | 洛阳阿特斯光伏科技有限公司 | Compound cutting method for crystal silicon rod |
| CN110871505B (en) * | 2018-08-30 | 2022-02-08 | 洛阳阿特斯光伏科技有限公司 | Compound cutting method for crystal silicon rod |
| CN110079801A (en) * | 2019-06-04 | 2019-08-02 | 泉州华大超硬工具科技有限公司 | A kind of functionalization diamond of coating surface complex metal layer |
| CN111101182A (en) * | 2020-03-23 | 2020-05-05 | 江苏聚成金刚石科技有限公司 | Method for improving sanding uniformity of plated diamond in online saw production process |
| CN112192459A (en) * | 2020-09-30 | 2021-01-08 | 苏州韦度新材料科技有限公司 | Preparation process of diamond wire saw suitable for cutting large-size semiconductor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104152973A (en) | Method for manufacturing diamond cutting wire | |
| CN101823240A (en) | The manufacture method of diamond fretsaw and diamond fretsaw | |
| CN101613845B (en) | Zirconium-base non-crystalline alloy compound material and preparation method | |
| CN101643926A (en) | Non-cyanide pre-plating copper plating solution | |
| CN101828799A (en) | Method for manufacturing hard gold jewelry | |
| CN103556194A (en) | Surface treatment process for aluminum alloy | |
| CN103789802A (en) | Electrosilvering method after copper base surface nanocrystallization processing | |
| CN103436931A (en) | Bidirectional pulse silver-plating method | |
| CN106637157A (en) | Method for plating nickel on surface of super-hard material | |
| CN104152972A (en) | Manufacturing method for diamond wire saw | |
| CN104120470A (en) | Cyanide-free monovalent copper presoaking method of steel and iron parts and zinc alloy die castings | |
| KR20160106173A (en) | Cyanide-free copper-preplating electroplating solution and preparation method therefor | |
| CN106987873A (en) | A kind of nickel plating process for electroplating bright nickeline | |
| CN110438550B (en) | Preparation method of ultra-sharp diamond wire saw and diamond wire saw | |
| CN106191968B (en) | A kind of production method for electroplating super hard abrasive line of cut | |
| CN114059120A (en) | Laser pump source chip base and new process for plating and silver plating on tube shell | |
| CN104120462A (en) | Method for carrying out cyanide-free cuprous brass electroplating on steel cord and method for passivating brass coating | |
| CN113337817A (en) | Electroplating process of copper diamond | |
| CN101781782B (en) | Cyanide-free high-speed silver plating electroplating solution | |
| CN105019010A (en) | Technology for recycling precious metal palladium from electronic element and electrochemical stripping solution applied to technology | |
| CN103806033A (en) | Method of electroplating metal layer on surface of zinc pressure casting | |
| CN107059081A (en) | A kind of nickel plating process for electroplating nickeline | |
| CN107236977A (en) | A kind of electroplating pretreatment process optimization method | |
| CN101831645B (en) | Cemented carbide steelwork surface electroless copper plating method | |
| CN101333675B (en) | Nanometer composite electroplating diamond tools |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent for invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 266114. A building, No. 66 Torch Road, Qingdao hi tech Industrial Development Zone, Shandong Applicant after: QINGDAO GAOCE TECHNOLOGY CO., LTD. Address before: 266114. A building, No. 66 Torch Road, Qingdao hi tech Industrial Development Zone, Shandong Applicant before: Qingdao Gaoxiao Measurement & Control Technology Co., Ltd. |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: QINGDAO GAOXIAO MEASUREMENT AND CONTROL TECHNOLOGY CO., LTD. TO: QINGDAO GAOCE TECHNOLOGY CO., LTD. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20141119 |