CN104145320B - Multi-step ion implanting - Google Patents
Multi-step ion implanting Download PDFInfo
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- CN104145320B CN104145320B CN201380003317.4A CN201380003317A CN104145320B CN 104145320 B CN104145320 B CN 104145320B CN 201380003317 A CN201380003317 A CN 201380003317A CN 104145320 B CN104145320 B CN 104145320B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32899—Multiple chambers, e.g. cluster tools
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/336—Changing physical properties of treated surfaces
- H01J2237/3365—Plasma source implantation
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Abstract
This document describes the system and method for strengthening sapphire part.One embodiment can use the form of method, and the first surface that it includes determining sapphire element performs the first implantation step relative to the direction of ion implantation device.The implantation step may include in the first surface guiding ion of the sapphire element to embed them under first surface.The system and method may also comprise one or more of following steps：Sapphire element is heated so that the ion of injection to be diffused into the deeper of sapphire element；Cooling sapphire component；With execution at least the second implantation step, ion is guided in the first surface of sapphire element so that ion is embedded under first surface.
Description
Technical field
The application is related to sapphire material, more specifically it relates to corundum and the physics of other processed sapphire materials
Performance.
Background technology
Corundum is the crystal form of aluminum oxide, and a variety of colors be present, all these to be commonly referred to as
Sapphire, except being commonly known as ruby red corundum and being referred to as get Pa Dema corundum（padparadscha）Powder orange
Color corundum.The corundum of transparent form is considered as jewel（precious stone）Or jewel（gem）.Generally, corundum is very hard
Firmly, it is specified that the Mohs' hardness of pure corundum is 9.0, in such manner, it is possible to the nearly all other ores of scratch.
As it would be appreciated, due to some features of corundum, especially its hardness and transparent characteristic so that it can be each
It is useful in the different application of kind.Processing and making however, the identical feature for being advantageous to special applications would generally increase
The cost and difficulty being ready for use in the sapphire of those applications.Therefore, the cost for preparing the corundum of special-purpose is often too high
, beyond to its cost that to be jewel related.For example, sapphire hardness causes when using conventional machining techniques, cutting
The material is not only difficult but also time-consuming with polishing.In addition, when for corundum, traditional machining tool such as cutting tool experience is relatively fast
Abrasion.
The content of the invention
This document describes the system and method for strengthening sapphire part.One embodiment takes the form of method, and it is wrapped
The direction for determining the first surface of sapphire element relative to ion implantation device is included, and performs the first implantation step.The note
Entering step may include to guide in the first surface of sapphire element（For example, high-energy）Ion is to embed them into first surface
Under.This method may also comprise one or more of following steps：Sapphire element is heated, so that the ion of injection diffuses into
The deeper of sapphire element；Cooling sapphire component；With perform at least the second implantation step, in sapphire element first surface
Ion is guided, these ions are embedded under first surface.
Embedded ion can produce compression stress in sapphire surface.For example, ion can be embedded under first surface to interstitial type
Between existing lattice sites, to produce compression stress.Or these ions can fill the room in sapphire crystal lattice, or
Can embedded ion to be embedded in region part be substantially amorphous or amorphous in nature.
Another embodiment can use the form of ion implant systems.The system may include the first ion implantation device,
Be configured to inject ions into the lattice structure of crystal member, and heater, be configured to heat crystal member so that injection
Ion can spread.
Plasma ion dipping can also be used and be used as ion implant systems or method.In plasma ion dipping,
Available ion energy can be slightly lower than the ion energy obtained with the ion beam mutation with high throughput.For example, with
It may include plasma in the plasma ion dipping systems that ion is embedded in sapphire part surface（Ion）Source, vacuum
Room and the bindiny mechanism for connecting plasma source and vacuum chamber.The vacuum chamber may include slit valve and turbomolecular pump or its
Its pumping system is to maintain low pressure.Using power supply（For example, pulsed DC source）Ion is directed to blue treasured from plasma source
The surface of stone part, its intermediate ion can be injected as described above.
Further embodiment can use method form, it include determination sapphire element first surface relative to from
The direction of sub- injection device, and perform the first implantation step.First implantation step may include the first of sapphire element
Surface guides the first ion.First ion can have the first Implantation Energy or energy level, and can be embedded into first surface
Under.This method, which may also comprise, performs at least the second implantation step, and second implantation step is included in the first table of sapphire element
Face guides the second ion.Second ion can have the second Implantation Energy or energy level, and can be embedded in first surface
The lower depth different from the first ion.
Further, another embodiment can use the form of method, and it includes determining the surface phase of sapphire element
Ion is guided for the direction of ion implantation device, and on the surface of sapphire element.These ions can be embedded in the surface
Under.This method may also comprise bombards the surface of sapphire element with least one of aluminium atom and oxygen atom.
Although disclosing multiple embodiments, other embodiments of the present invention are made to ability by following detailed description
Field technique personnel are made apparent from.As it will be realized, these embodiments can modify in every respect, and all without departing from
The spirit and scope of these embodiments.Thus, it is believed that accompanying drawing and detailed description are substantially to be used to illustrate and not limit.
Brief description of the drawings
Accompanying drawing 1 illustrates the sapphire part of example.
Accompanying drawing 2A illustrates the ion implant systems for being used to inject ions into the sapphire part surface of accompanying drawing 1 of example.
Accompanying drawing 2B illustrates another ion implant systems for being used to inject ions into sapphire part surface.
Accompanying drawing 3 illustrates the support component of accompanying drawing 2A or 2B ion implant systems, for being propped up in ion implantation process
Support sapphire part.
Accompanying drawing 4 is along the partial sectional view of the sapphire part of the IV-IV lines of accompanying drawing 3, and shows trellis crystal knot
Structure.
Accompanying drawing 5 is along the partial sectional view of the sapphire part of the IV-IV lines of accompanying drawing 3, and shows and is injected into trellis
Ion in crystal structure.
Accompanying drawing 6 is along the partial sectional view of the sapphire part of the IV-IV lines of accompanying drawing 3, and shows compression layer, example
Such as to reduce or prevent the Crack Extension in sapphire part.
Accompanying drawing 7 is along the partial sectional view of the sapphire part of the IV-IV lines of accompanying drawing 3, and shows the sapphire portion
Compression layer on both top surface and basal surface of part.
Accompanying drawing 8 is table, which illustrate relative to the ion concentration injected in sapphire part sapphire part it is strong
Degree.
Accompanying drawing 9 illustrates the support component of accompanying drawing 3, and it clamps sapphire part and the edge of part can be banged with ion
Hit.
Accompanying drawing 10 illustrates the Chamfer Edge with the sapphire part of the curve of indication ion concentration.
Accompanying drawing 11 illustrates the heating stepses for ion further to be diffused into trellis crystal structure.
Accompanying drawing 12 illustrates the ion implanting step after the heating stepses of accompanying drawing 11, with increase sapphire part surface from
Sub- concentration.
Accompanying drawing 13 illustrates the sapphire part of accompanying drawing 1, and it has different ion implanted regions, with all desired by acquisition
Such as the effect of area coloring.
Accompanying drawing 14 is flow chart, illustrates the ion injection method of the embodiment according to an example.
Accompanying drawing 15 illustrates the system for injecting ions into sapphire structures according to another embodiment.
The system that accompanying drawing 16 illustrates accompanying drawing 15, it has the bias voltage terminal for ion flow.
Accompanying drawing 17 illustrate inject curve, its show due to caused by ion implanting crystal structure different depth pressure
Stress under compression.Transverse axis represents the depth in crystal structure, and the longitudinal axis represents stress level.
Accompanying drawing 18 illustrates the injection curve of accompanying drawing 17, has the smooth region between Liang Feng.
Accompanying drawing 19 illustrates another injection or net impact curve.
Accompanying drawing 20 is the flow chart for illustrating ion injection method, and this method includes atom bombardment step to replace crystal structure
Be replaced atom.
Accompanying drawing 21 is illustrated with fine setting（trim）To prevent the camera window of interference.
Accompanying drawing 22 is illustrated with coloring edge to prevent the sapphire window of interference.
Embodiment
Although sapphire inherent strength is higher than glass, do not have built up well such as chemical enhanced method
Significant improved strength is provided after mechanical-moulded.The extension of surface crack generally under stress causes sapphire failure.
Therefore, in order to improve sapphire intensity and robustness, using ion injection method come to provide intensity increase be probably useful.
For the chemical enhanced method of glass, substituted wherein spreading with larger ion exchange compared with small ion, in glass portion
Part produces compressive stress layers around surface, and it is used for preventing surface crack from extending.On the contrary, sapphire moment ion implanting is used
High-energy ion bombardment sapphire part, the ion are embedded under surface with interstitial type or other forms, are split with producing for prevention
Stitch the similar thin layer or compressive stress layers of extension.Sapphire ion implantation technology produces the strain for being generally less than about 1 micrometer depth
Lattice.Strengthened using nitrogen or argon ion, while not as limitation, because the concentration of any ion can be produced with surface
Lattice strain needed for compression stress.
Concentration for reinforcing can fall about 1013- about 1019Individual ion/cm2Between.Also its outside this scope can be implemented
Its concentration, however, should take care, low concentration will can not produce enough distortions of lattice with measurable intensity effect, and
High concentration can result in surface deterioration, because the ion of injection can make skin breakage so as to reduce intensity, or can produce energy
Drop low intensive from crystal to non-crystal structure change.The selection of ion and concentration may depend on the size of ion, its energy
Amount, it electric charge and it with sapphire chemical reaction because these will determine the depth of implanted layer, should caused by surface
The size of power and caused sapphire color, if any.
Because the impurity in sapphire can assign color, specific application can be determined whether that hope colours or colourless
Outward appearance.Further, since ion implanting can be sight technique, for desired effect, curtain-shaped cover member can be carried out using mask not
Same position.For example, perhaps cause to colour to obtain the concentration needed for maximum strengthen.It that case, ion can be selected
More desirable color is produced in particular location, while makes the coloring minimum in other regions.One of the thought is rational real
It is now that the ion of high concentration is injected around sapphire display appearance to produce the mask of specific color（Depth can such as be produced
The iron and titanium of color, such as black）.Therefore, ion implanting can both improve the intensity at rapid wear edge, also color desired by offer.So
The potential different ions for reducing concentration can be injected in display part afterwards, is also provided and is strengthened but avoid and can make outside display
See the coloring of deterioration.This technology can enjoy the additional benefit for producing mask, and the mask shows in sapphire rather than such as profit
Returned and printed with traditional ink（ink backprinting）In the case of show in bottom.
In some embodiments, the equipment available for injection technology can both influence the depth of injection, can also influence to implement
Technology.If for example, in 80 kilo electron volts（keV）Or close to 80 kilo electron volts（keV）Lower operation injection device, ion
It can be injected in the first depth, but in 160keV or can be deeper than the first depth second close to the injection device of 160keV operations
Depth injects ion.Therefore, different stress curves can be provided using different Implantation Energies and prevent different type and/or
The damage of depth.In some embodiments, it can be used two（It is or multiple）Injection device injects ion in two different depths.
Plasma process can also be used, its intermediate ion has different（It is such as lower）Energy, and generation is injected in other depths
Degree（For example, relative to the smaller depth in injection surface）.Further, in some embodiments, it can configure single injection
Equipment is operated to obtain desired stress curve in two or more different energy levels.
In addition, in injection process, the atom of replaceable crystal structure.Specifically, when Ar, N, Ti, Fe or other ion
When bombarding plane of crystal, replaceable aluminium or oxygen atom.In order to help to protect the integrality of crystal structure, walked in initial injection
Al or O ions can be inserted into by ion implantation technology after rapid.For example, it is bent to obtain desired reinforcing to be initially injected argon
Line, it then can perform implantation step and be inserted into any oxygen atom being replaced in argon injection period.Also can be in high temperature（Such as one
In a little embodiments between about 500-1800 DEG C）It is lower to perform one or more implantation steps.For example, can be relative to oxygen step
At a high temperature of perform argon implantation step, vice versa.
Accompanying drawing 1 illustrates the sapphire part 100 of example.The sapphire part 100 can pass through any suitable method shape
Into this method includes, but not limited to edge defined film-fed growth method（EFG）, kyropoulos（Kyropoulos）, flame melt method
（Verneuil）, czochralski method（Czochralski）, flux growth metrhod（flux）, hydro-thermal method（hydrothermal）, vertical water flat ladder
Spend freezing method（“VHGF”）, and Bridgman method（Move horizontally growth）.The sapphire part 100 can from sapphire wafer,
Cut down in sapphire bar or other such sapphire elements.The sapphire part 100 can use any suitable geometric form
Shape, and can be manufactured for any appropriate purpose.In one embodiment, for example, the sapphire part 100 can generally have
There is rectangular shape, and be configurable to as the cover plate in electronic device.In other embodiments, the sapphire portion
Part 100 can have round-shaped, and be configurable to the cover plate as camera.
One or more surfaces of sapphire part 100 can be injected ions into, to help to strengthen the part.Specifically, example
Such as, ion implanting top surface 102 and one or more edges 104 can be used.In some embodiments, surface, such as top surface
102, there can be the ion concentration gradient of injection, the region for possessing different ions concentration and/or different ions type.Example
Such as, the peripheral edge 106 of top surface 102 can have the ion concentration higher than the center 108 of top surface.In addition, or conduct
Selection, top surface 102 can inject the ion concentration different from edge 104.Further, each edge 104 can have it is different from
Sub- concentration.
In addition, or alternatively, the peripheral edge 106 of top surface 102 can inject the ion different from center 108.Example
Such as, peripheral edge can inject titanium ion and/or iron ion, and center 108 can inject nitrogen and/or argon ion.
It should be understood that, it is possible to achieve other combinations of other ions and/or ion.Edge 104 can also inject and top surface
102 different ions and/or one or more edges can inject the ion different from another edge.Further, top surface and
Basal surface can be with different ion concentrations and/or with different injection ions.
Accompanying drawing 2A illustrates the ion implant systems 110 for injecting ions into sapphire part 100.Generally, injection system
System 110 can operate according to conventional art.First, multiple parts 100 can be arranged on end station 112 so that ion can be drawn
Lead simultaneously injection part 100.Ion for injection starts in the ion gun 114 with magnet 115.Ion gun 114 includes room 116
（Or anode）And filament（Or negative electrode）118.Magnet 115 is located near ion gun 114.By element source 120 by element such as titanium,
Argon, iron, nitrogen or another elements fed are into room 116 and are converted into plasma.Before direction is changed by magnet 124, make member
Element extracts construction unit/preaceleration unit 122 by ion, and is filtered or separated with mass spectral analysis slit 125.Then, make
Ion accelerates post 126 by ion.Ion passes through magnetic quadrupole lens 128 and electronic scanning system or list before impact part
Member 130.
Accompanying drawing 2B illustrates another by plasma ion impregnation technology, for sapphire part 100 inject from
The ion implant systems 110 of son.In accompanying drawing 2B special tectonic, for example, the injected system 110 includes vacuum chamber type end work
Position 112, for sapphire（Crystalline alumina or AlOx）Ion is injected in the surface of the selection of part or part 100, wherein
Selected ion 131 is produced from electrons/ions plasma 131A.
Injection ion 131 is provided by plasma ion source 121, configuration plasma source 121 is used for producing electrons/ions
Plasma 131A, it includes being selected to the special ion 131 for injecting sapphire part 100, for example, aluminium, oxygen, nitrogen, argon,
Magnesium, titanium, copper, iron or chromium ion 131, or combinations thereof.Vacuum chamber end station 112 passes through vacuum pipe or other connecting portions
Part 132 is connected with plasma source 121.Vacuum chamber 112 may also comprise various vacuum valves and pump part 133 and 134, to maintain
It is adapted for carrying out the desired low-pressure of the plasma immersion ion implantation technology of sapphire part 100.
As shown in accompanying drawing 2B, such as using fixing device or support component 135, by cover plate or other sapphire portions
Part 100 impregnates or exposed to plasma 131A so that selection is exposed to the ion of selection for the surface 101 of ion implanting
131.There is provided that electrode 136 contacts with part 100 or electric charge connects, for applying voltage with from electrons/ions plasma 131A
Ion 131 selected by middle separation, and accelerate ion 131 towards selected surface 101.
Power supply 137 is provided to produce selected injecting voltage on electrode 136, for example, absolute value is at several kilovolts（kV）
The order of magnitude（E.g., from about 1kV- about 10kV）, or tens or hundreds of kilovolts of orders of magnitude（For example, about 10kV- about 100kV, or it is higher）'s
Negative operating voltage-V0So that the injection surface 101 of selected ion 131 towards sapphire part 100 accelerates.Noted in direction
During entering the acceleration of surface 101, ion 131 obtains kinetic energy K=qV0, wherein q is the absolute value of ionic charge, such as e, 2e,
3e etc., and wherein e is the absolute value of basic electric charge electronically.
So, energy qV0Ion implantation energy is represented, it can pass through selection operation voltage V0With ionization electric charge q（Or from
Sonization is horizontal）To select, with the desired target depth in sapphire part 100（Or in desired target depth range）Note
Enter ion 131.Injection depth is defined relative to the injection surface 101 of selection so that on the injection surface of sapphire part 100
Target depth under 101, or inject in corresponding target depth range the ion 131 of selection.Injection depth also relies on choosing
The cross section of the scattering of the size for the ion 131 selected and the corresponding atom being used in the lattice from sapphire part 100, with
And ionization grade or electric charge q.
For example, power supply 137 can operate under pulse DC patterns, wherein by operating voltage-V0It is applied on electrode 136（With
Sapphire part 100）Relatively short time, plasma of the relatively short time as used electronics/ion plasma 131A
Frequency defines, such as in several microseconds or the longer order of magnitude（E.g., from about 1 μ s or less than about 10 μ s or longer）.In DC pulse period
Between, due to the negative electrical charge pulse-V being applied to by electrode 136 on sapphire part 1000, by electrons/ions plasma
Electronics in 131A repels from the ion implanting surface 101 of selection.
Meanwhile the ion 131 of selection is accelerated towards sapphire part 100, and based on Implantation Energy described above,
Electric charge and scattering cross section, desired target depth or scope injection under the ion implanting surface 101 of selection.As choosing
Select, substantially invariable D/C voltage can be applied, by being generally higher than 1-10 μ s injection length, such as the order of magnitude in millisecond, or
The order of magnitude or longer of the person in the second.For example, can be selected according to ion, plasma density, charge number, and other parameters, such as
Desired ion surface density and target depth, and the sapphire on the ion implanting surface 101 of neighbouring selection as a result
Compression stress, color, transparency and the opacity of part 100 determines injection length.
In some designs, vacuum chamber end station 112 may also comprise heater 138 or other configurations are used for heating blue treasured
The equipment of stone part 100, such as the conducting path by using fixing device 135, or by conducting, radiating and the combination of convection current
Sapphire part 100 is heated together with inside vacuum chamber 112.In the designs, sapphire part 100 can be heated to enough
Diffusion temperature so that the ion 131 of selection is diffused into the selected surface 101 times of sapphire part 100, and to be more than target deep
The depth of degree.
Heating can be under the low pressure in vacuum chamber 112, or is carried out in the inert atmosphere of elevated pressures.For example, can be by indigo plant
Jewel part 100 is heated to about 500 DEG C-about 1800 DEG C of diffusion temperature, such as the diffusion time section of a few minutes or a few houres, makes
The ion 131 that must be selected is diffused into the depth for being more than target depth of selected ion implanting surface 101 times of sapphire part 100
Degree.Generally, as described above, diffusion ion will keep being enough in the selected ion implanting surface 101 of sapphire part 100
Produce the diffusion concentration of compression stress.
Before or after heating sapphire part 100 is with ion selected by diffusion 131 to larger depth, or heating
During, extra ion 131 can be also embedded in selected surface 101.For example, extra ion 131 can be embedded in most
First target depth（For example with identical Implantation Energy or pulse voltage V0）, or in another target depth（For example, adopt
With different Implantation Energies or pulse voltage V0）.Similarly, heating sapphire part 100 to embedded before diffusion temperature or
When being injected into selected surface 101, extra ion 131 can be produced from the initial identical element of ion 131.As choosing
Select, can configure plasma ion source 121 to produce selected ion 131 from different elements, in heating sapphire
Part 100 to before diffusion temperature, during or after, embedded selected surface 101.
Power supply 137 may also be configured to produce the operating voltage V with the gradient across electrode 1360So that it is selected from
Son 131 is embedded in the selected surface 101 of sapphire part 100 with different depth or concentration, is such as based on corresponding Implantation Energy
Gradient along voltage gradient defined in.For example, as shown in figure 2b, the form that can be segmented provides electrode 136, different
Voltage is applied to different electrode parts, to produce the desired electricity on the selected surface 101 for crossing over sapphire part 100
Gradient is pressed, so produces the gradient of corresponding injection depth or the density for injecting ion 131.
In additional examples, sapphire part 100 can be covered, such as by using electrode 136 as masking
Structure, or use different masking materials.In such applications, selected surface 101 is exposed to electrons/ions plasma
Ion 131 in body 231, and by least one other surface shaded of sapphire part 100 so that selected by the insertion of ion 131
The surface 101 selected, and ion 131 is other without being covered by electrode or other shadowing elements 136 for embedded sapphire part 100
（Masking）Surface.
Accompanying drawing 3 illustrates to support the support component 140 of the end station 112 of sapphire part 100.The support component 140
It can generally include, clamp sapphire part 100 to protect the two of sapphire part reverse structures 142.Due to sapphire
Hardness, do not have to generally worry that the reverse geometry 142 can damage sapphire part 100., can be however, in some embodiments
One or more Buffer Units are provided on the interface between structure 142 and sapphire part 100.Supporting assembly 140 can be configured
For mobile or rotation so that multiple sides of sapphire part 100 can be exposed to ion.As it would be appreciated, in end station
In can also have multiple or many support components to support multiple or many sapphire parts.
Accompanying drawing 4-7 is the partial sectional view of sapphire part 100, such as is obtained along the center line IV-IV of accompanying drawing 3.It should manage
Solution, these accompanying drawings are not in proportion, purpose be only illustrate set forth herein concept.So, accompanying drawing should not be interpreted to
Limit or represent the exact relationship of the part of size, dimension or explanation.
Accompanying drawing 4 shows the trellis crystal structure 150 of sapphire part 100.As discussed above, in this ion implantation technology
In, ion can inject the interstitial air space 152 of trellis crystal structure 150.Or the existing original in the replaceable sapphire crystal lattice of ion
Room point in son, or filling sapphire crystal lattice, or can embedded ion so that on some properties in embedded region essentially
It is unformed or non-crystal.
For example, ion can penetrate into the primary lattice of lattice 150（primary lattice）Layer or site, and replace existing
Deposit（Such as aluminium or oxygen）Atom, or occupy the room point of primary lattice 150 so that the ion of injection is arranged in sapphire part
In 100 primary crystal structure.Or ion can penetrate into and occupy calking site 152, time as shown in Figure 5 is formed
Level lattice（secondary lattice）Structure.
The display of accompanying drawing 5 is injected into sapphire part 100, such as the ion 154 of injection interstitial air space 152.Ion 154 is being filled out
The injection in gap space 152（Or otherwise inject sapphire part 100）, can be produced in sapphire structures helps to prevent
The compression layer of crack or Defect expanding in the surface of sapphire part 100.
For example, as shown in Figure 4, the ion 154 of injection can occupy calking site 152, formed and be arranged in the first of part 100
Level（Such as sapphire）In lattice or between secondary lattice structure or secondary lattice layer, as shown in Figure 5.Or injection
Ion 154 can occupy the site in primary lattice 150, as described above.The ion 154 of injection can also produce in lattice structure
Raw local interruption, formed in the embedded ion region around the primary lattice 150 of sapphire part 100 local unformed（It is non-
Crystal）Material area.The ion of injection can be+1 valency ion ,+divalent ion, or the ion of other ioni valences.
Accompanying drawing 6 illustrates crack 162 or defect in compression layer 160 and surface 102.By injecting on trellis crystal structure
The compression that provides of ion 154 prevent the expansion in crack 162.So, for example, if due to such as causing sapphire part to hit
The defects of stress of the fall event of rigid surface produces or crack, the then ion injected help to protect the complete of sapphire part
Whole property.
Accompanying drawing 7 shows the top surface 102 with the sapphire part 100 by compression layer 160 caused by ion implanting
With basal surface 103.In some embodiments, can be by the part injection of top surface 102 and/or top surface and basal surface 103
Different ions and/or different ion concentrations.It should be appreciated that in other embodiments, one in surface can be not injected into
Ion.This can work as a situation that appearance is exposed to without slave unit shell in surface, and which limit it to be exposed to
The defects of causing shock and other operation consequences.
The ion concentration of injection generally can be about 1013- about 1019Individual ion/cm2.However, in some embodiments, it is dense
Degree can be more than or less than this scope.
Accompanying drawing 8 illustrates curve map 170, and which depict the relation curve of intensity in sapphire part and ion concentration.Tool
Body, transverse axis represents the concentration of the ion of injection, and the longitudinal axis illustrates the intensity of sapphire structures.As curve 172 is shown, work as ion
When being injected into certain concentration, the intensity of sapphire structures starts to be enhancing before reducing after the threshold level more than concentration.For
The purpose of explanation, at the first mark 174 on transverse axis or its neighbouring concentration can be about 1013Individual ion/cm2, in the second mark
Remember at 176 or its neighbouring concentration can be about 1019Individual ion/cm2.Generally, ion concentration should provide the level of raising intensity.
As curve 172 is shown, too high concentration can reduce sapphire intensity.
Although the substantial amounts of surface discussed above for being related to sapphire part 100, it will be appreciated that at the edge of sapphire part
104 also carry out ion implanting, and the above-mentioned edge 104 for being also applied to sapphire part 100.Specifically, accompanying drawing 3
Support component 140 is configurable to clamp sapphire part 100 in a manner of allowing edge by ion flux impacts, such as accompanying drawing 9
It is shown.Edge 104 can with 102,103 identical or different ion of top surface and/or basal surface, and with identical or different dense
Degree is injected.Configurable support component 140 is with rotation so that all edges 104 of sapphire part 100 can be exposed to ion
Injection.In addition, support component 140 is can configure to be moved in different directions, to adapt to edge shape.For example, support component 140 can
Tilt so that ion can more directly impact straight or chamfering edge, or other marginal textures.
Accompanying drawing 10 illustrates the Chamfer Edge 180 of sapphire element.In addition, the curve 182 on Chamfer Edge illustrates
The relative concentration of ion implanting.As illustrated, due to most can directly receive ion stream, flat or neighbour at edge 180
The flat ion of proximal edge 180 can be more enriched with.The sloping portion at edge 180 can have relatively low ion concentration.However,
In some embodiments, the whole moiety concentrations at edge 180 are consistent.For example, being capable of inclined reality in support component 140
To apply in mode, ion stream can directly impact sloping edge, can be changed along the ion concentration of edge 180, or along the base of edge 180
It is consistent or substantially the same in sheet.
One limitation of ion implanting can be processing depth.Generally, it is about 1 micro- that ion implanting, which can be limited in depth capacity,
Rice, when being defined relative to injection surface.So, following risk is there is, i.e. manufacturing deficiency or processing damage may draw
Enter the cut or defect through material surface more deeper than process layer, therefore, limit its effect in terms of crack extension is prevented
Power., can be between each implantation step in order to improve the technique, or completed between one or more continuous implantation steps
Ion implanting is continuously completed in the case of high-temperature heat treatment.
In these embodiments, the injection that will cause lattice strain to depth x can be completed.By handling material at high temperature
Material, spread and diffuse deeper into the ion for allowing injection to x+y in material, while reduce the ion concentration on surface.Then may be used
It is horizontal with the ion concentration of elevation surface again to complete another implantation step.It is repeatable to complete these steps, to produce most
Whole process layer, it has the surface stress with conventional single treatment phase same level, but with bigger than other possible modes
Ion depth of penetration.
Accompanying drawing 11 illustrates that, by heating stepses, ion is diffused into deeper lattice layer.Thermal source 190 can be provided to heat table
Face 102 or heating sapphire part 100.As sapphire part is heated, lattice structure 150 can become loose, and ion 154 can
Diffuse into the deeper of lattice structure.In some embodiments, end station 112 or vacuum chamber（Accompanying drawing 2A or accompanying drawing 2B）
It can be used as baking oven or can use to heat otherwise so that do not move sapphire part 100 between heating and implantation step.At it
In its embodiment, between heating and ion implanting step can alternation sum alternate multiple batches of sapphire part so that when a collection of
It is secondary in end station 112 when, another batch can be heated, such as in the baking oven outside end station 112, or in end work
In the baking oven 112 of position.
Diffusion can be reduced close to or the ion concentration of the outer layer on adjacent injection surface.So, using ensuing ion
Implantation step in outer layer to supply ion, as shown in Figure 12.By injecting the combination with heating stepses, ion can be deeper
It is injected into lattice structure, to be extended the defects of helping and prevent the layer under surface.
In some embodiments, more heater and/or polyion injected systems can be achieved, in one embodiment,
First ion implanter can inject the ion of the first element, and the ion that the second ion implanter can inject second element is uncommon to obtain
The effect of prestige.Between each ion implanting step, or between two or more continuous ion implanting steps, it can be used and add
Hot device helps to spread the ion being previously injected.
Accompanying drawing 13 illustrates the part 100 after ion implanting, wherein the first area 200 of top surface 102 by inject from
Son coloring（For example, blackening or giving another color）, second area 202 keeps substantially limpid or transparent.Generally, first area
200 may include the peripheral part of top surface 102, and second area 202 may include the central part of top surface.In some embodiments
In, in ion implantation process, mask can be used to produce difference（It is such as limpid and coloring）Region.
From the viewpoint of technique, ion implanting can perform after post processing is annealed and prior to decoration, because injection can be damaged
Hinder or influence any surface ink marks or coating, and the most successful in terms of the surface with minimum defect can be expected.Accompanying drawing 14 is
According to the method 210 of the processing sapphire part of embodiment of the present disclosure.
First, growing sapphire crystal（Sash 212）.Then cutting sapphire crystal（Sash 214）To form sapphire
Part, then it is set to pass through annealing process（Sash 216）.Then, for ion implanting, by the one or more of sapphire part
The Ions Bombardment of surface ion stream（Sash 218）.During ion implanting, position of the sapphire part relative to ion stream is controlled
Put, to be appropriately implanting ion on each desired surface.In addition, can be to indigo plant during one or more ion implanting steps
Some region of jewel part is covered, to obtain desired concentration, and/or ion desired by selection to inject some region
Rather than other regions.Then sapphire part can be heated, to facilitate ion to be diffused into deeper lattice layer（Sash 220）.
After the heating, Ions Bombardment sapphire part can be used again（Sash 222）.Ion implanting, control, masking and add
Heat/diffusing step can in any order, number or combination repeat, so as to obtain desired ion selection, injection depth, concentration,
Color and other properties.
Then, it can perform post-processing step such as ink mask（ink mask）Using（Sash 224）.Generally, in ion
It is less likely have polishing step after injection, to protect compression stress and other desired properties.Or on ion implanting surface
Afterwards, light polishing step or other rear injection surface treatments can be applied.
Other technologies be can perform to inject ions into sapphire crystal lattice structure, calking or other.For example, in some embodiment party
In formula, sapphire element can be coated with ion and starch or paste, and apply a current in slurry, so as to embedded in the surface of selection
The depth that the ion of selection extremely selects.Or as described above, can using only plasma immersion technique, or with from
Beamlet deposition, ion slurry and the combination of other ionic depositing methods.
Accompanying drawing 15 illustrates ion sizing process.Show in more detail sapphire element 230 one or two（It is or every
It is individual）There is the sapphire element 230 that ion pastes 232 coatings on side 102,103.Electric terminals 234（Such as there is opposite voltage ± V0
Single terminal end）It is electrically connected to ion paste 232 or sapphire element 230, electric current ± I0Applied by terminal 234 to ion and pasted,
Such as use current source or power supply 238.
Specifically, terminal 234 can be in the difference of sapphire element 230（It is such as main opposite）Applied on side 102,103
Add opposite charges or voltage ± V0So that ion flows through the injection surface of selection（Such as top surface or basal surface 102 or 103）.
The electric charge or bias of terminal 234 can be slightly lower than in ion beam and plasma deposition process, can also replace so that ion is pasted
Ion implanting in 232 is to each side 102 and 103 of sapphire part or component 230, or injects sapphire element 230
Edge, or the combination of the side 102,103 and edge 104 of injection sapphire element 230.That is, changeable negative electrode and sun
Pole（Or it can be used a grounding terminals 234 that there is voltage ± V with another0Terminal 234）, to provide exchange（AC）Or direct current
（DC）Bias for by ion paste or starch 232 in ion implanting to the side 102,103 of the selection of sapphire element 230 and/
Or edge 104.
Accompanying drawing 16 illustrates to cause（It is for example, positive）The bias for the terminal 234 that ion flows along the direction of arrow 236.It can make
With any appropriate power supply 238 by electric current ± I0Apply to ion paste 232.For example, in some embodiments, can be to ion
Paste 232 applies alternating current（AC）±I0To inject ion.In other embodiments, 232 can be pasted to ion and applies direct current
（DC）±I0, the polarity of terminal 234 can be periodically switched.In other embodiments, one is may include in power supply 238
Or multiple switch capacitor, and provide pulse electric charge to terminal 234 with them.
Generally, the diffusion into sapphire element 230 is faster than the diffusion to outside sapphire element 230 so that with process
Completion, ion implanting into sapphire, such as calking or by displacement enter lattice.Or ion can occupy the crystalline substance of sky
Lattice volume, or form in lattice the region of basic undefined structure.Ion paste 232 may include at least one ion elements and right
In the medium that the ion elements of selection are suitable（Or some suitable media）.The ion or ion elements of selection can have with above
The generally same or analogous size of ion and chemical property in the magnetic quadrupole lens and plasma immersion systems of description.
It should be appreciated that the ion implant systems illustrated in accompanying drawing 15 and 16 also can be together with heating stepses described above
There is provided, to help ion further to diffuse into sapphire trellis crystal structure.In some embodiments, can be pasted in ion
232 implement heating still at the surface of sapphire element 230, and in other embodiments, can remove before the heating step from
Son paste.In other embodiment, ion implantation process can be in stove or baking oven such as vacuum drying oven end station or arrangement room 112
Middle progress so that just can perform heating and ion implanting step without mobile sapphire element.
In some embodiments, the injection depth of ion can be Implantation Energy, the size of ion and injection ion
The function of crystal face.Implantation Energy can be the function for the method that system, mechanical device and injection ion use.Ion implanting is set
It is standby, illustrate in such as accompanying drawing 2A, 2B, 15 and 16, can be under the certain energy level that part is determined by the injection depth of ion
Operation.For example, injection device can operate under the first related 80keV of injection depth, and the second injection device can be
Operated under 160keV, it is related to the second injection depth more deeper than the first injection depth.Or ionic charge also may be selected and come
Aim at the specific injection depth such as defined relative to injection surface, such as certain types of single ionization（+ 1 electric charge）Atom oozes
Enter first object depth, certain types of double ioinization or more ionization（+ 2 electric charges are higher）Atom penetrates into second, more Small object note
Enter depth.
More generally, the ion note based on different ion beams, plasma and ion slurry can be used alone or in combination
Enter system and method, so as to according to parameter（It includes but is not limited to ionic type（Atomicity and atomic weight）, electric charge（Ionization
It is horizontal）, Implantation Energy and incident angle）, the ion of selection is injected with different ions density and injection depth.Difference injection depth
With ionic type and density generally in the different compression of the different depth generation of crystal structure or tensile stress, and can be selected
Select, so as to operationally prevent the expansion in the varying level of the structure defined relative to ion implanting surface or the damage of depth
Exhibition.
Accompanying drawing 17 is turned to, which illustrates injection curve 240, injection curve 240 shows due to ion implanting and caused
In the compression stress of the different depth of crystal structure.Transverse axis 241 represents the depth in crystal structure, and the longitudinal axis 243 represents（Such as
Compression）Stress.For example, the first stress peak 242 can be located at the first depth, and the second stress peak 244 can be disposed other than first deeply
Second depth of degree.So, ion implant systems and method based on selection, the different depth of one, two or more can
Identical or different compression stress is subjected to, to prevent the extension in the crack in crystal structure.
So, ion injects in which can have concentration gradient so that letter of the ion concentration as the depth in sapphire material
Count and change, as substantially horizontal relative to injection surface or vertical（Vertical）Defined in direction.Or ion can be with
Across injection surface concentration gradient and inject so that ion concentration along surface horizontal direction change, such as with central part
Point or region compare, as mentioned above for described by accompanying drawing 1, along the edge of surrounding have different selection ion concentrations and/or
Inject depth.
Different stress peaks and depth may be selected or using different stress peak and depth as mesh based on universal damage line
Mark.For example, the first stress peak can be located near the depth that surface damage generally occurs.For example, first peak 242 can be concentrated approx
Relative to ion implanting surface about 20nm or smaller depth.Second peak 244 can be located at target damage than surface type depth
Depth, it is greater than about 20nm depth.
As it would be appreciated, the ion implanting of different depth can be performed by one or more injectors or injected system.
For example, the first injector can operate in following energy level, the energy level is in horizontal injection more deeper than the second injector
Ion, second injector can operate in lower energy level, and vice versa.For example, the first injector can be in about 160keV
Lower operation, the second injector can operate under about 80keV.As described above, different ion beams, plasma can also be utilized
Body impregnates and ion slurry injected system and method.
Further, in some embodiments, single injector is configurable in multiple different-energies level or used
Different method operation, to obtain desired injection curve.Can also be configured injector energy level be used for it is subsequent from
Switch in sub- implantation step between different operating energy levels.Further, injector is configurable to when it is in different energy
Ion is continuously injected into when changing between amount level.So, it can inject ions into or be infused in one or more of crystal structure
Substantially discrete level or depth, or different from common discrete levels, for example, depth substantially continuous in crystal structure
In the range of.
Accompanying drawing 18 illustrates the injection curve 240 with smoothed curve.Specifically, ion can be between two peaks 242 and 244
Depth 246 inject.It can smoothly help to strengthen the structure sheaf between target depth.Due to when different target energy levels it
Between when converting, the result being continuously injected into of injector, may occur in which smoothed curve.In addition, or alternatively, can be due to ion
There is smoothed curve in diffusion, such as during diffusion heating stepses or annealing steps.It is further, since two or more using different
The superposition of the ion implanting depth of the discrete implantation step of energy level, it may occur in which smooth.That is, each step of injection
The ion for being not injected into precision target depth is may comprise, so as to cause can be folded with being intended to the ion implanting of different target depth
The injection curve added.
Accompanying drawing 19 illustrates injection curve 248, and it can represent the net impact curve as caused by smoothed curve.As described
, injection curve 248 is included in the compression stress of the enhancing at two peaks for representing target depth.However, in the presence of from surface（Example
Such as the starting point on transverse axis）Extend to more than two peak depth（Such as more than the second target depth）Compression stress.
It should be appreciated that net impact curve can be worked out based on desired structural strength properties.That is, it may be selected specific
Target depth strengthen compression stress, to provide the desired protection of confrontation particular type damage.In addition, it will be appreciated that can
Than the two more or less targets of depth are formulated for ion implanting.In addition, depth can be based on using different ions or element and
Change, to control injection depth, rather than Implantation Energy, depth or can be based on energy level, method for implanting, and/or ion/
Some of element selection are combined and changed.Further, injecting ion concentration can be in the horizontal change of different depth.So, first is deep
Degree may include the first ion with the first concentration, and the second depth may include the second ion with the second concentration, the second concentration
It is similar and different with the first ion concentration of the first depth.
Further, in some embodiments, some combinations that can have ion in specific depth level are uncommon to obtain
The effect of prestige.For example, can be by the same or about level of titanium ion and Ar+ion implantation.Desired effect may include due to
The ion of injection and caused desired coloring and/or strengthen.In some embodiments, in order to strengthen optional certain depth
Level can be target with another level to provide specific coloring.
In some embodiments, the depth level of ion implanting can the surface based on the crystal structure being injected into and become
Change.For example, the top surface of structure can have the injection depth different from the injection depth of the side wall of structure.In addition, top surface can
With the injection depth different from basal surface or sidewall surfaces, and/or different ion concentration etc..Also can be in the different tables of structure
Different ion/elements or combinations thereof are injected in face.
In some cases, bombardment ion enters crystal structure（Or other ion implantation technologies）It can cause to form structure
The displacement of atom.That is, when injecting ions into structure, for example, it is so that structure-reinforced or add color, aluminium to structure
Or oxygen atom can be replaced from lattice.Believe and generally replaced more commonly in the superficial layer of structure.In some cases, aluminium or
Oxygen atom can also have relative to the higher replacement rate of other atoms.Such as replaceable more oxygen compared with aluminium.
As it would be appreciated, displacement can change the chemical component of structure.For the integrality of protection structure, it is possible to provide oxygen
And/or aluminium atom come replace displacement atom., can be by oxygen atom for example, if oxygen atom is replaced with the speed higher than aluminium
Or Ions Bombardment is to the surface of structure.In some embodiments, can in identical or different atom bombardment or implantation step
By both oxygen and aluminium（Or the atom or ion of other selections）Bombard onto surface, such as by ion beam technology, or utilize
Gas ions impregnate or ion sizing process, or the combination of these techniques, as described above, or by another atom or ion Hong
Hit technique.
Accompanying drawing 20 is the flow chart of the technique 250 for the example that explanation includes atom bombardment step.First, can be according to begging for above
The technology injection Doped ions of opinion（Sash 252）.Executable heating diffusing step（Sash 254）To help ion to diffuse into knot
The different layers of structure.Then it can perform the second ion implanting step（Or additional implantation step）（Sash 256）.Second ion implanting walks
Suddenly different Implantation Energies, different concentration levels, different ions be can use or inject phase with different temperature or with first
Same operating parameter performs.
After the ion implant step, the surface can be bombarded with aluminium and/or oxygen atom（Sash 258）.The step can be in height
In or less than performing at a temperature of implantation step.In addition, it can perform one or more annealing steps 260（Sash 260）.Annealing step
Suddenly can help to recover crystal structure（For example, obtain suitable or desired aluminium atom and relation/ratio of oxygen atom）.
Various techniques described herein has many different applications.Especially, in electronic equipment for consumption, can have
It is related to and includes, but are not limited to the application of the other structures in the cover plate, window and equipment of equipment.One such example
Property application be to be used for camera window or cover plate part, selection surface or their part.
Accompanying drawing 21 illustrates camera window 280.The both sides of camera window（Or surrounding）It is vernier element 282, it provides use
To prevent from coming from strobe discharge tube elements 284（Such as flash lamp）And/or other light sources, be such as located relative to camera window and
The interference of display in the housing of backboard 286.Accompanying drawing 22 is gone to, according to this technology, sapphire window 290 can be replaced or is used for
Camera window, and it is dry from strobotron 284 and other sources effectively to prevent to colour its edge 292
Disturb, such as the ion implanting that carries out of ion by using the selection of sufficient density, it is one or more substantially opaque to give
Edge 292.So, can eliminate（Such as separation or discrete）Trimming assembly 282.This can provide several advantages, such as reduce
Z stack sizes（Such as may be thinner equipment）, and the firmer window for camera.
In sapphire window part is handled, top surface and basal surface can also inject relative to the different ion in edge and/
Or concentration so that compared with the part on no progress ion implanting surface, top surface and basal surface have for the optics of window
Limited influence does not influence substantially.That is, when edge injection ion, make edge substantially opaque or prevent light from passing through
When, can be by the ion implanting top surface and basal surface of the concentration of basic maintenance sapphire material transparency.
Although discussion above describes specific embodiment, one skilled in the art will recognize that without departing from this
In the case of disclosed spirit and scope, it can make a change in form and details.For example, processing step can be in another order
Or performed with different combinations.Further, different ion implanting steps may include different electric charges（Such as single electric charge and double electricity
Charge ions）And different method for implanting and energy level.So, can be selected based on multiple different parameters and combinations thereof
Inject depth.Therefore, specific embodiments described herein is appreciated that example, rather than limitation the scope of the present disclosure.
It foregoing merely illustrates the principle of invention.Under teaching herein, to those skilled in the art, to being retouched
The various modifications and variations for the embodiment stated are obvious.It is, therefore, to be understood that those skilled in the art can
Many systems, devices and methods are designed, although not clearly illustrating herein and describing them, embody the disclosure
Principle, and therefore fall within the scope and spirit of the invention.From the description above with accompanying drawing, those skilled in the art can
With understand, the specific embodiment being shown and described exclusively for the purposes of illustration, for the ginseng of the details of particular implementation
Examine and be not intended to limit the scope of the present invention as defined in appended claim.
Claims (29)
1. a kind of method, including：
Determine the surface of sapphire element relative to the direction of ion implantation device；
The first implantation step is performed, first implantation step is included in the surface guiding ion of sapphire element, by the ion
It is embedded under the surface；
Sapphire element is heated, so that the ion of injection diffuses into the deeper of sapphire element；
Cooling sapphire component；
At least the second implantation step is performed, second implantation step is included in the surface guiding ion of sapphire element, by this
Ion is embedded under the surface, and
The surface is bombarded with aluminium atom, to replace the atom replaced by the first or second implantation step.
2. the method for claim 1 wherein the ion of the first implantation step is different from the ion of the second implantation step.
3. the method for claim 1 wherein the ion of the first implantation step has the energy higher than the ion of the second implantation step
Amount.
4. the method for claim 1 wherein the ion of the first implantation step has the energy lower than the ion of the second implantation step
Amount.
5. the method for claim 1 wherein guide ion to obtain about 10 on the surface13- 1019Individual ion/cm2Ion it is dense
Degree.
6. the method for claim 5, its intermediate ion is injected with crossing over the concentration gradient on the surface.
7. the method for claim 5, the wherein surface include at least two regions, each region has different injection ions dense
Degree.
8. the method for claim 7, the first area in wherein at least two region includes the outer peripheral edge on the surface, at least twoth area
The second area in domain includes the central part on the surface.
9. the method for claim 1, it further comprises：
The direction of sapphire element is determined again；
Select ion implantation concentration；And
Ion is guided in the second surface of sapphire element, the ion is embedded under second surface, to be produced in second surface
Compression stress.
10. the ion implantation concentration of the selection under the method for claim 9, wherein second surface it is corresponding with the surface from
Sub- implantation concentration is different.
11. the method for claim 1 wherein ion of the selection in surface guiding and the ion in second surface guiding, so that
Each of which includes the one or more in Nitrogen ion, argon ion, titanium ion or iron ion.
12. the method for claim 11, wherein the ion selected includes+1 valency ion.
13. the method for claim 11, wherein the ion selected includes+divalent ion.
14. the method for claim 1 wherein ion penetrates into and is embedded in the primary lattice layer of sapphire element.
15. the method for claim 1 wherein ion penetrates into and is embedded in the secondary lattice layer of sapphire element.
16. the method for claim 1, it further comprises covering a part for sapphire surface, to prevent blue precious
Ion implanting in the shielded part in stone surface.
17. a kind of system for ion implanting, including：
First ion implantation apparatus, it is configured in the lattice structure of the first ion implanting crystal member；
Second ion implantation apparatus, it is configured in the lattice structure of the second ion implanting crystal member；
Atom bombardment device, it is configured to bombard the crystal member with aluminium atom, to replace by the injection of the first ion or the
The atom of the injection displacement of two ions；And
Heater, it is configured to heat crystal member so that the diffusion of the ion of injection is possibly realized.
18. the system of claim 17, wherein first ion implantation apparatus inject the first ion of the first element, the second injection
Device injects the second ion of second element.
19. a kind of method, including：
Determine the surface of sapphire element relative to the direction of ion implantation device；
The first implantation step is performed, it is included in the surface of sapphire element and guides the first ion, and first ion has the
Under the surface of one Implantation Energy and embedded sapphire element；
At least the second implantation step is performed, it is included in the surface of sapphire element and guides the second ion, second ion tool
There is the depth for being different from the first ion under the surface of the second Implantation Energy and embedded sapphire element；And
Atom bombardment step is carried out with aluminium atom on the surface of the sapphire element, to replace passing through the first or second implantation step
The atom of displacement.
20. the method for claim 19, it further comprises performing annealing steps to the surface of sapphire element.
21. the method for claim 19, wherein first and second ion are single electric charges or doubly charged.
22. the method for claim 21, wherein first ion have different electric charges from second ion.
23. the method for claim 19, it further comprises heating sapphire element to cause the diffusion of the ion of injection.
24. a kind of method, including：
Determine the surface of sapphire element relative to the direction of ion implantation device；
The first implantation step is performed, it is included in the surface of sapphire element and guides the first ion, should by first ion insertion
Under surface；
Perform at least second step, it is included in the surface of sapphire element and guides the second ion, by second ion with
The different target depth of first ion is embedded under the surface；And
The surface of the sapphire element is bombarded with aluminium atom, to replace the atom replaced by the first or second implantation step.
25. the method for claim 24, it further comprises by injecting the first and second ions between different target depth
One or both of make the stress curve of sapphire element smooth.
26. the method for claim 25, wherein smoothly including heating stepses, to spread the first He between different target depths
One or both of second ion.
27. the method for claim 24, wherein the first and second ions have different charge levels.
28. the method for claim 24, wherein with different implantation concentrations the first and second ions of horizontal injection.
29. the method for claim 24, wherein first and second ion are different elements.
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| PCT/US2013/025783 WO2014126551A1 (en) | 2013-02-12 | 2013-02-12 | Multi-step ion implantation |
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| EP (1) | EP2789004A1 (en) |
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| US20160024646A1 (en) | 2016-01-28 |
| JP5999668B2 (en) | 2016-09-28 |
| KR101641807B1 (en) | 2016-07-21 |
| WO2014126551A1 (en) | 2014-08-21 |
| KR20140110858A (en) | 2014-09-17 |
| CN104145320A (en) | 2014-11-12 |
| JP2015518517A (en) | 2015-07-02 |
| US9828668B2 (en) | 2017-11-28 |
| EP2789004A1 (en) | 2014-10-15 |
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